Showing 1–2 of 2 results for author: Tomilin, F N
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Quantum Effects at a Spin-Flop Transition in the Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$
Authors:
V. V. Val'kov,
A. O. Zlotnikov,
A. Gamov,
N. A. Fedorova,
F. N. Tomilin
Abstract:
It is shown that the experimentally detected features in the low-temperature behavior of the magnetization in an external magnetic field perpendicular to the layers of manganese ions of the topological antiferromagnet MnBi$_2$Te$_4$ are due to quantum effects induced by the off-diagonal nature of the trigonal component of the crystal field. In this case, the anomalous increase in the magnetization…
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It is shown that the experimentally detected features in the low-temperature behavior of the magnetization in an external magnetic field perpendicular to the layers of manganese ions of the topological antiferromagnet MnBi$_2$Te$_4$ are due to quantum effects induced by the off-diagonal nature of the trigonal component of the crystal field. In this case, the anomalous increase in the magnetization of the material before the spin-flop transition, as well as after it in the phase of "collapsed" sublattices, is explained by the suppression of contributions from quantum effects. The comparison of the results of the theoretical analysis with experimental data has made it possible to refine the parameters of the effective spin model of MnBi$_2$Te$_4$ and to establish the important role of the noted trigonal component.
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Submitted 28 May, 2025;
originally announced May 2025.
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The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires
Authors:
Pavel V. Avramov,
Alexander A. Kuzubov,
Alexander S. Fedorov,
Pavel B. Sorokin,
Felix N. Tomilin,
Yoshihito Maeda
Abstract:
The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in cluster and PBC approaches using B3LYP/6-31G* and PW PP LDA approximations. The total density of states (TDOS) of the smallest quasispherical silicon quantum dot…
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The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in cluster and PBC approaches using B3LYP/6-31G* and PW PP LDA approximations. The total density of states (TDOS) of the smallest quasispherical silicon quantum dot (Si85) corresponds well to the TDOS of the bulk silicon. The elongated silicon nanodots and 1D nanowires demonstrate the metallic nature of the electronic structure. The surface oxidized layer opens the bandgap in the TDOS of the Si/SiO2 species. The top of the valence band and the bottom of conductivity band of the particles are formed by the silicon core derived states. The energy width of the bandgap is determined by the length of the Si/SiO2 clusters and demonstrates inverse dependence upon the size of the nanostructures. The theoretical data describes the size confinement effect in photoluminescence spectra of the silica embedded nanocrystalline silicon with high accuracy.
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Submitted 15 September, 2007;
originally announced September 2007.
