Showing 1–4 of 4 results for author: Tomi, M Y

Shot Noise Suppression and Hopping Conduction in Graphene Nanoribbons

Authors: R. Danneau, F. Wu, M. Y. Tomi, J. B. Oostinga, A. F. Morpurgo, P. J. Hakonen

Abstract: We have investigated shot noise and conduction of graphene field effect nanoribbon devices at low temperature. By analyzing the exponential $I-V$ characteristics of our devices in the transport gap region, we found out that transport follows variable range hopping laws at intermediate bias voltages $1 < V_{bias} < 12$ mV. In parallel, we observe a strong shot noise suppression leading to very low… ▽ More We have investigated shot noise and conduction of graphene field effect nanoribbon devices at low temperature. By analyzing the exponential $I-V$ characteristics of our devices in the transport gap region, we found out that transport follows variable range hopping laws at intermediate bias voltages $1 < V_{bias} < 12$ mV. In parallel, we observe a strong shot noise suppression leading to very low Fano factors. The strong suppression of shot noise is consistent with inelastic hopping, in crossover from one- to two-dimensional regime, indicating that the localization length $l_{loc} < W$ in our nanoribbons. △ Less

Submitted 24 May, 2010; originally announced May 2010.

Comments: 4 pages, 4 figures

Shot noise and conductivity at high bias in bilayer graphene: Signatures of electron-optical phonon coupling

Authors: A. Fay, R. Danneau, J. K. Viljas, F. Wu, M. Y. Tomi, J. Wengler, M. Wiesner, P. J. Hakonen

Abstract: We have studied electronic conductivity and shot noise of bilayer graphene (BLG) sheets at high bias voltages and low bath temperature $T_0=4.2$ K. As a function of bias, we find initially an increase of the differential conductivity, which we attribute to self-heating. At higher bias, the conductivity saturates and even decreases due to backscattering from optical phonons. The electron-phonon int… ▽ More We have studied electronic conductivity and shot noise of bilayer graphene (BLG) sheets at high bias voltages and low bath temperature $T_0=4.2$ K. As a function of bias, we find initially an increase of the differential conductivity, which we attribute to self-heating. At higher bias, the conductivity saturates and even decreases due to backscattering from optical phonons. The electron-phonon interactions are also responsible for the decay of the Fano factor at bias voltages $V>0.1$ V. The high bias electronic temperature has been calculated from shot noise measurements, and it goes up to $\sim1200$ K at $V=0.75$ V. Using the theoretical temperature dependence of BLG conductivity, we extract an effective electron-optical phonon scattering time $τ_{e-op}$. In a 230 nm long BLG sample of mobility $μ=3600$ cm$^2$V$^{-1}$s$^{-1}$, we find that $τ_{e-op}$ decreases with increasing voltage and is close to the charged impurity scattering time $τ_{imp}=60$ fs at $V=0.6$ V. △ Less

Submitted 6 September, 2011; v1 submitted 28 April, 2009; originally announced April 2009.

Comments: 7 pages, 7 figures. Extended version of the high bias part of version 1. The low bias part is discussed in arXiv:1102.0658

Evanescent wave transport and shot noise in graphene: ballistic regime and effect of disorder

Authors: R. Danneau, F. Wu, M. F. Craciun, S. Russo, M. Y. Tomi, J. Salmilehto, A. F. Morpurgo, P. J. Hakonen

Abstract: We have investigated electrical transport and shot noise in graphene field effect devices. In large width over length ratio $W/L$ graphene strips, we have measured shot noise at low frequency ($f$ = 600--850 MHz) in the temperature range of 4.2--30 K. We observe a minimum conductivity of $\frac{4e^{2}}{πh}$ and a finite and gate dependent Fano factor reaching the universal value of 1/3 at the Di… ▽ More We have investigated electrical transport and shot noise in graphene field effect devices. In large width over length ratio $W/L$ graphene strips, we have measured shot noise at low frequency ($f$ = 600--850 MHz) in the temperature range of 4.2--30 K. We observe a minimum conductivity of $\frac{4e^{2}}{πh}$ and a finite and gate dependent Fano factor reaching the universal value of 1/3 at the Dirac point, i.e. where the density of states vanishes. These findings are in good agreement with the theory describing that transport at the Dirac point should occur via evanescent waves in perfect graphene samples with large $W/L$. Moreover, we show and discuss how disorder and non-parallel leads affect both conductivity and shot noise. △ Less

Submitted 1 July, 2008; originally announced July 2008.

Comments: Extended version (19 pages, 10 figures) of Phys. Rev. Lett. 100, 196802 (2008). Additional data on the effect of disorder and non-parallel leads. Submitted for publication in Journal of Low Temperature Physics for the Proceedings of the International Symposium on Quantum Phenomena and Devices at Low Temperatures (ULTI 2008), Espoo, Finland

Shot Noise in Ballistic Graphene

Authors: R. Danneau, F. Wu, M. F. Craciun, S. Russo, M. Y. Tomi, J. Salmilehto, A. F. Morpurgo, P. J. Hakonen

Abstract: We have investigated shot noise in graphene field effect devices in the temperature range of 4.2--30 K at low frequency ($f$ = 600--850 MHz). We find that for our graphene samples with large width over length ratio $W/L$, the Fano factor $\mathfrak{F}$ reaches a maximum $\mathfrak{F} \sim$ 1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller $W/L$, th… ▽ More We have investigated shot noise in graphene field effect devices in the temperature range of 4.2--30 K at low frequency ($f$ = 600--850 MHz). We find that for our graphene samples with large width over length ratio $W/L$, the Fano factor $\mathfrak{F}$ reaches a maximum $\mathfrak{F} \sim$ 1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller $W/L$, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states. △ Less

Submitted 1 July, 2008; v1 submitted 27 November, 2007; originally announced November 2007.

Comments: Phys. Rev. Lett. 100, 196802 (2008)