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Optically Controlled Polarization in Highly Oriented Ferroelectric Thin Films
Authors:
Hitesh Borkar,
M Tomar,
Vinay Gupta,
Ram S. Katiyar,
J. F. Scott,
Ashok Kumar
Abstract:
The out-of-plane and in-plane polarization of (Pb0.6Li0.2Bi0.2)(Zr0.2Ti0.8)O3(PLBZT) thin film has studied in the dark and under illumination of a weak light source of a comparable bandgap. A highly oriented PLBZT thin film was grown on LaNiO3 (LNO)/LaAlO3(LAO) substrate by pulsed laser deposition system which illustrates well-saturated polarization and its significant enhancement under illuminati…
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The out-of-plane and in-plane polarization of (Pb0.6Li0.2Bi0.2)(Zr0.2Ti0.8)O3(PLBZT) thin film has studied in the dark and under illumination of a weak light source of a comparable bandgap. A highly oriented PLBZT thin film was grown on LaNiO3 (LNO)/LaAlO3(LAO) substrate by pulsed laser deposition system which illustrates well-saturated polarization and its significant enhancement under illumination of light. We have employed two configurations for polarization characterization; first deals with out of plane polarization with single capacitor under investigation, whereas second demonstrates the two capacitors connected in series via the bottom electrode. Two different configurations were illuminated using different energy sources and their effects were studied. The latter configuration shows a significant change in polarization under illumination of light that may provide an extra degree of freedom for device miniaturization. The polarization was also tested using positive-up & negative-down (PUND) measurements which confirm robust polarization and their switching under illumination.
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Submitted 29 June, 2017;
originally announced June 2017.
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Giant Enhancement in Ferroelectric Polarization under Illumination
Authors:
Hitesh Borkar,
Vaibhav Rao,
M Tomar,
Vinay Gupta,
J. F. Scott,
Ashok Kumar
Abstract:
We report optical enhancement in polarization and dielectric constant near room temperature in Pb0.6Li0.2Bi0.2Zr0.2Ti0.8O3 (PLBZT) electro-ceramics; these are doubly substituted members of the most important commercial ferroelectric PbZr0.2Ti0.8O3 (PZT:20/80). Partial (40%) substitution of equal amounts of Li+1 and Bi+3 in PZT: 20/80 retains the PZT tetragonal structure with space group P4mm. Unde…
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We report optical enhancement in polarization and dielectric constant near room temperature in Pb0.6Li0.2Bi0.2Zr0.2Ti0.8O3 (PLBZT) electro-ceramics; these are doubly substituted members of the most important commercial ferroelectric PbZr0.2Ti0.8O3 (PZT:20/80). Partial (40%) substitution of equal amounts of Li+1 and Bi+3 in PZT: 20/80 retains the PZT tetragonal structure with space group P4mm. Under illumination of white light and weak 405-nm near-ultraviolet laser light (30 mW), an unexpectedly large (200-300%) change in polarization and displacement current was observed. Light also changes the dc conduction current density by one to two orders of magnitude with a large switchable open circuit voltage (Voc ~ 2 V) and short circuit current (Jsc ~ 5x10-8 A). The samples show a photo-current ON/OFF ratio of order 6:1 under illumination of weak light.
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Submitted 25 June, 2017;
originally announced June 2017.
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Transverse Magnetoresistance of Zn$_{0.9}$Co$_{0.1}$O:Al Thin Films
Authors:
R. Martínez-Valdez,
H. J. Jiménez-González,
L. Angelats-Silva,
M. Tomar
Abstract:
The transverse magnetoresistance of thin films of the Diluted Magnetic Semiconductor Zn$_{1-x}$Co$_{x}$O:Al on glass was studied for temperatures in the range of 5 to 100 K. Measurements were made on thin films grown by rf magnetron sputtering, with a thickness of approximately 200 nm. ZnO was alloyed with Co to a concentration $x$ of 0.1 and co-doped with a 5.5% wt concentration of Al. The electr…
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The transverse magnetoresistance of thin films of the Diluted Magnetic Semiconductor Zn$_{1-x}$Co$_{x}$O:Al on glass was studied for temperatures in the range of 5 to 100 K. Measurements were made on thin films grown by rf magnetron sputtering, with a thickness of approximately 200 nm. ZnO was alloyed with Co to a concentration $x$ of 0.1 and co-doped with a 5.5% wt concentration of Al. The electrical resistivity was measured along the sample surface by the four-point probe method with a magnetic field of up to 4 T applied perpendicular to the surface of the film. The experimental results of the magnetoresistance have been interpreted by means of a semiclassical model that combines a relaxation-time approximation to describe scattering processes in ZnO and a phenomenological approach to the spin-disorder scattering due to the indirect exchange interaction of the magnetic impurities.
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Submitted 24 May, 2017;
originally announced May 2017.
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Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3
Authors:
Hitesh Borkar,
Vaibhav Rao,
Soma Dutta,
Arun Barvat,
Prabir Pal,
M Tomar,
Vinay Gupta,
J. F. Scott,
Ashok Kumar
Abstract:
We discovered a near room temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositional disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld ana…
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We discovered a near room temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositional disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2) which is confirmed by the high resolution transmission electron diffraction pattern. Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel-Fulture relation. It shows slim polarization-hysteresis (P-E) loops and excellent displacement coefficients (d33 ~ 233 pm/V) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (Tm). The underlying physics for light-sensitive dielectric dispersion was probed by X-ray photon spectroscopy (XPS) which strongly suggests that mixed valence of bismuth ions, especially Bi5+ ions, are responsible for most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4+ states and sit at the centers of the TiO6 octahedra, which along with asymmetric hybridization between O 2p and Bi 6s orbitals appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research.
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Submitted 31 January, 2016;
originally announced February 2016.
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Anomalous change in leakage and displacement currents after electrical poling on lead-free ferroelectric ceramics
Authors:
Hitesh Borkar,
M. Tomar,
Vinay Gupta,
J. F. Scott,
Ashok Kumar
Abstract:
We report the polarization, displacement current and leakage current behavior of a trivalent nonpolar cation Al cation substituted lead free ferroelectric NBT-BT electroceramics with tetragonal phase and P4mm space group symmetry. Nearly three orders of magnitude decrease in leakage current were observed under electrical poling, which significantly improves microstructure, polarization, and displa…
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We report the polarization, displacement current and leakage current behavior of a trivalent nonpolar cation Al cation substituted lead free ferroelectric NBT-BT electroceramics with tetragonal phase and P4mm space group symmetry. Nearly three orders of magnitude decrease in leakage current were observed under electrical poling, which significantly improves microstructure, polarization, and displacement current. Effective poling neutralizes the domain pinning, traps charges at grain boundaries and fills oxygen vacancies with free charge carriers in matrix, thus saturated macroscopic polarization in contrast to that in upoled samples. E-poling changes bananas type polarization loops to real ferroelectric loops.
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Submitted 13 September, 2015;
originally announced September 2015.
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Impedance Spectroscopy Study in the vicinity of Ferroelectric Phase Transition
Authors:
Hitesh Borkar,
M Tomar,
Vinay Gupta,
Ashok Kumar
Abstract:
An impedance spectroscopy (IS) is a versatile tool to study the effect of grains (bulk), grain boundaries and electrode-electrolyte interface on dielectric and electrical properties of electro-ceramics. This study only focuses the high frequency (1 kHz to 10 MHz) probe of bulk ferroelectric capacitance near ferroelectric phase transition temperature (FPTT). The PZTFW single phase and PZTFW-CFO com…
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An impedance spectroscopy (IS) is a versatile tool to study the effect of grains (bulk), grain boundaries and electrode-electrolyte interface on dielectric and electrical properties of electro-ceramics. This study only focuses the high frequency (1 kHz to 10 MHz) probe of bulk ferroelectric capacitance near ferroelectric phase transition temperature (FPTT). The PZTFW single phase and PZTFW-CFO composites, respectively, have been investigated to understand the microstructure-property relation. Keeping in mind the complex microstructure of both systems, low frequency ( less than 1 kHZ ) impedance investigation, which basically deals with grain boundaries and electrode-interfaces, has been ignored. X-ray diffraction (XRD) patterns, microstructures, dielectric spectra, and impedance plots revealed two distinct phases, inbuilt compressive strain, small shift in dielectric maximum temperature, and two activation energy regions, respectively, in PZTFW-CFO composite compare to PZTFW ceramic. Addition of CFO in PZTFW medium purified the impurity phases present in the PZTFW matrix. The PZTFW-CFO composite shows flat dielectric behavior and high dielectric constant near FPTT at high frequency may be useful for tunable dielectric capacitors. The changes in bulk capacitance, relaxation time and constant phase element parameters have probed in the proximity of FPTT regions. Nyquist plot and modulus formalism show a poly-dispersive nature of relaxation, relate the activation energy (Ea) of oxygen vacancies, mainly responsible for the bulk capacitive conduction. A spiral kind of modulus spectra was observed at elevated temperatures and frequencies (greater than 2 MHz) suggests the possible experimental artifacts, have no physical reasons to explain.
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Submitted 29 July, 2014;
originally announced July 2014.
