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(111) Si spin qubits constructed on L point of band structure
Authors:
Takafumi Tokunaga,
Hiromichi Nakazato
Abstract:
(001) Si spin qubits are being intensively studied because they have structures similar to that of CMOS devices currently being produced, and thus have the advantage of utilizing state-of-the-art miniaturization, integration, and variation-reduction-technologies. However, there are still issues, such as further improvement of relaxation and decoherence time, stabilization of valley-splitting contr…
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(001) Si spin qubits are being intensively studied because they have structures similar to that of CMOS devices currently being produced, and thus have the advantage of utilizing state-of-the-art miniaturization, integration, and variation-reduction-technologies. However, there are still issues, such as further improvement of relaxation and decoherence time, stabilization of valley-splitting control, and reduction of the variation caused by the roughness of the interface. In this study, new measures are proposed to address these three issues. Instead of confining an electron to the minimum energy point $X_0$ of the conduction band along the band structure $Γ-Δ-X$ in (001) Si crystals, we propose confining an electron to the L point along $Γ-Λ-L$ in (111) Si crystals. At the $X_0$ point, the symmetry causes spin-orbit interaction to act on the electron, and the sixfold degeneracy is lifted into a fourfold and a twofold, and the valley-splitting of the twofold conflicts with the two-level system. In the symmetry of the $L$ point, substantial spin polarization disappears, facilitating the reduction of the spin-orbit interaction, and the fourfold degeneracy is lifted to threefold and single, and the single becomes ground state. The need to increase the magnitude of the valley-splitting is exempt, allowing the electron to be controlled away from the interface, which is expected to reduce the variation caused by the roughness of the interface. Data on the confinement of an electron to the $L$ point and the control of fourfold degeneracy are needed, and it is hoped that prototype silicon spin qubits constructed on (111) Si crystals will be developed and that the proposed device structure will help implement quantum computers based on Si devices.
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Submitted 23 January, 2025;
originally announced January 2025.
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First-principles calculations of phonon transport across a vacuum gap
Authors:
Takuro Tokunaga,
Masao Arai,
Kazuaki Kobayashi,
Wataru Hayami,
Shigeru Suehara,
Takuma Shiga,
Keunhan Park,
Mathieu Francoeur
Abstract:
Phonon transport across a vacuum gap separating intrinsic silicon crystals is predicted via the atomistic Green's function method combined with first-principles calculations of all interatomic force constants. The overlap of electron wave functions in the vacuum gap generates weak covalent interaction between the silicon surfaces, thus creating a pathway for phonons. Phonon transport, dominated by…
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Phonon transport across a vacuum gap separating intrinsic silicon crystals is predicted via the atomistic Green's function method combined with first-principles calculations of all interatomic force constants. The overlap of electron wave functions in the vacuum gap generates weak covalent interaction between the silicon surfaces, thus creating a pathway for phonons. Phonon transport, dominated by acoustic modes, exceeds near-field radiation for vacuum gaps smaller than ~ 1 nm. The first-principles-based approach proposed in this work is critical to accurately quantify the contribution of phonon transport to heat transfer in the extreme near field.
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Submitted 26 October, 2021;
originally announced October 2021.
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Extreme Near-Field Heat Transfer Between Gold Surfaces
Authors:
Takuro Tokunaga,
Amun Jarzembski,
Takuma Shiga,
Keunhan Park,
Mathieu Francoeur
Abstract:
Extreme near-field heat transfer between metallic surfaces is a subject of debate as the state-of-the-art theory and experiments are in disagreement on the energy carriers driving heat transport. In an effort to elucidate the physics of extreme near-field heat transfer between metallic surfaces, this Letter presents a comprehensive model combining radiation, acoustic phonon and electron transport…
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Extreme near-field heat transfer between metallic surfaces is a subject of debate as the state-of-the-art theory and experiments are in disagreement on the energy carriers driving heat transport. In an effort to elucidate the physics of extreme near-field heat transfer between metallic surfaces, this Letter presents a comprehensive model combining radiation, acoustic phonon and electron transport across sub-10-nm vacuum gaps. The results obtained for gold surfaces show that in the absence of bias voltage, acoustic phonon transport is dominant for vacuum gaps smaller than ~2 nm. The application of a bias voltage significantly affects the dominant energy carriers as it increases the phonon contribution mediated by the long-range Coulomb force and the electron contribution due to a lower potential barrier. For a bias voltage of 0.6 V, acoustic phonon transport becomes dominant at a vacuum gap of 5 nm, whereas electron tunneling dominates at sub-1-nm vacuum gaps. The comparison of the theory against experimental data from the literature suggests that well-controlled measurements between metallic surfaces are needed to quantify the contributions of acoustic phonon and electron as a function of the bias voltage.
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Submitted 8 February, 2021;
originally announced February 2021.
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Role of Acoustic Phonon Transport in Near- to Asperity-Contact Heat Transfer
Authors:
Amun Jarzembski,
Takuro Tokunaga,
Jacob Crossley,
Jeonghoon Yun,
Cedric Shaskey,
Ryan A. Murdick,
Inkyu Park,
Mathieu Francoeur,
Keunhan Park
Abstract:
Acoustic phonon transport is revealed as a potential radiation-to-conduction transition mechanism for single-digit nanometer vacuum gaps. To show this, we measure heat transfer from a feedback-controlled platinum nanoheater to a laterally oscillating silicon tip as the tip-nanoheater vacuum gap distance is precisely controlled from a single-digit nanometer down to bulk contact in a high-vacuum she…
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Acoustic phonon transport is revealed as a potential radiation-to-conduction transition mechanism for single-digit nanometer vacuum gaps. To show this, we measure heat transfer from a feedback-controlled platinum nanoheater to a laterally oscillating silicon tip as the tip-nanoheater vacuum gap distance is precisely controlled from a single-digit nanometer down to bulk contact in a high-vacuum shear force microscope. The measured thermal conductance shows a gap dependence of $d^{-5.7\pm1.1}$ in the near-contact regime, which is in good agreement with acoustic phonon transport modeling based on the atomistic Green's function framework. The obtained experimental and theoretical results suggest that acoustic phonon transport across a nanoscale vacuum gap can be the dominant heat transfer mechanism in the near- and asperity-contact regimes and can potentially be controlled by an external force stimuli.
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Submitted 28 September, 2022; v1 submitted 19 April, 2019;
originally announced April 2019.
