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Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric
Authors:
Arthur R. J. Barreto,
Graziâni Candiotto,
Harold J. C. Avila,
Rafael S. Carvalho,
Aline Magalhães dos Santos,
Mario Prosa,
Emilia Benvenuti,
Salvatore Moschetto,
Stefano Toffanin,
Rodrigo B. Capaz,
Michele Muccini,
Marco Cremona
Abstract:
Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low charge mobility and high threshold voltage are critical hurdles to practical OLETs implementation. This work reports on the improvements obtained by using polyureth…
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Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low charge mobility and high threshold voltage are critical hurdles to practical OLETs implementation. This work reports on the improvements obtained by using polyurethane films as dielectric layer material in place of the standard poly(methylmethacrylate) (PMMA) in OLET devices. It was found that polyurethane drastically reduces the number of traps in the device thereby improving electrical and optoelectronic device parameters. In addition, a model was developed to rationalize an anomalous behavior at the pinch-off voltage. Our findings represent a step forward to overcome the limiting factors of OLETs that prevent their use in commercial electronics by providing a simple route for low-bias device operation.
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Submitted 4 December, 2023;
originally announced December 2023.
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Ohmic contact engineering in few-layer black Phosphorus field effect transistors
Authors:
Francesca Telesio,
Gwenael le Gal,
Manuel Serrano-Ruiz,
Federico Prescimone,
Stefano Toffanin,
Maurizio Peruzzini,
Stefan Heun
Abstract:
Achieving good quality Ohmic contacts to van der Waals materials is a challenge, since at the interface between metal and van der Waals material, different conditions can occur, ranging from the presence of a large energy barrier between the two materials to the metallization of the layered material below the contacts. In black phosphorus (bP), a further challenge is its high reactivity to oxygen…
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Achieving good quality Ohmic contacts to van der Waals materials is a challenge, since at the interface between metal and van der Waals material, different conditions can occur, ranging from the presence of a large energy barrier between the two materials to the metallization of the layered material below the contacts. In black phosphorus (bP), a further challenge is its high reactivity to oxygen and moisture, since the presence of uncontrolled oxidation can substantially change the behavior of the contacts. In this study, we investigate the influence of the metal used for the contacts to bP against the variability between different flakes and different samples, using three of the most used metals as contacts: Chromium, Titanium, and Nickel. Using the transfer length method, from an analysis of ten devices, both at room temperature and at low temperature, Ni results to be the best metal for Ohmic contacts to bP, providing the lowest contact resistance and minimum scattering between different devices. Moreover, we investigate the gate dependence of the current-voltage characteristics of these devices. In the accumulation regime, we observe good linearity for all metals investigated.
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Submitted 14 May, 2019;
originally announced May 2019.
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A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
Authors:
Maurizio Peruzzini,
Roberto Bini,
Margherita Bolognesi,
Maria Caporali,
Matteo Ceppatelli,
Francesca Cicogna,
Serena Coiai,
Stefan Heun,
Andrea Ienco,
Inigo Iglesias Benito,
Abhishek Kumar,
Gabriele Manca,
Elisa Passaglia,
Demetrio Scelta,
Manuel Serrano-Ruiz,
Francesca Telesio,
Stefano Toffanin,
Matteo Vanni
Abstract:
Phosphorene, the 2D material derived from black phosphorus, has recently attracted a lot of interest for its properties, suitable for applications in material science. In particular, the physical features and the prominent chemical reactivity on its surface render this nanolayered substrate particularly promising for electrical and optoelectronic applications. In addition, being a new potential li…
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Phosphorene, the 2D material derived from black phosphorus, has recently attracted a lot of interest for its properties, suitable for applications in material science. In particular, the physical features and the prominent chemical reactivity on its surface render this nanolayered substrate particularly promising for electrical and optoelectronic applications. In addition, being a new potential ligand for metals, it opens the way for a new role of the inorganic chemistry in the 2D world, with special reference to the field of catalysis. The aim of this review is to summarize the state of the art in this subject and to present our most recent results in preparation, functionalization and use of phosphorene and its decorated derivatives. In particular, we discuss several key points, which are currently under investigation: the synthesis, the characterization by theoretical calculations, the high pressure behaviour of black phosphorus, as well as decoration with nanoparticles and encapsulation in polymers. Finally, device fabrication and electrical transport measurements are overviewed on the basis of recent literature and new results collected in our laboratories.
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Submitted 28 March, 2019;
originally announced March 2019.
