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Investigation about the electrochemical reduction in 3YSZ, related phase transition and consequences
Authors:
C. Bechteler,
R. I. Todd
Abstract:
In this research the electrochemical reduction of 3YSZ was investigated in various atmospheres with different oxygen partial pressures under an electric field of 25 V/cm at an environmental temperature of 800 °C. At a certain oxygen partial pressure insufficient incorporation of oxygen in the sample led to electrochemical reduction of YSZ which shows two clearly distinguishable states. First, grey…
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In this research the electrochemical reduction of 3YSZ was investigated in various atmospheres with different oxygen partial pressures under an electric field of 25 V/cm at an environmental temperature of 800 °C. At a certain oxygen partial pressure insufficient incorporation of oxygen in the sample led to electrochemical reduction of YSZ which shows two clearly distinguishable states. First, greying of the material without a significant change in properties was detected which then transitioned into a second stage where a fundamental phase transition in the material happened within seconds from tetragonal 3YSZ towards FCC rocksalt ZrO or ZrON, dependent on the atmosphere. This phase transition is accompanied by blackening of the material, sudden increase in electrical conductivity, current concentration, and an obvious change in Raman spectrum.
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Submitted 7 July, 2023;
originally announced July 2023.
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Measurement of swelling-induced residual stress in ion implanted SiC, and its effect on micromechanical properties
Authors:
Alexander J. Leide,
Richard I. Todd,
David E. J. Armstrong
Abstract:
Ion implantation is widely used as a surrogate for neutron irradiation in the investigation of radiation damage on the properties of materials. Due to the small depth of damage, micromechanical methods must be used to extract material properties. In this work, nanoindentation has been applied to ion irradiated silicon carbide to extract radiation-induced hardening. Residual stress is evaluated usi…
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Ion implantation is widely used as a surrogate for neutron irradiation in the investigation of radiation damage on the properties of materials. Due to the small depth of damage, micromechanical methods must be used to extract material properties. In this work, nanoindentation has been applied to ion irradiated silicon carbide to extract radiation-induced hardening. Residual stress is evaluated using HR-EBSD, AFM swelling measurements, and a novel microcantilever relaxation technique coupled with finite element modelling. Large compressive residual stresses of several GPa are found in the irradiated material, which contribute to the significant hardening observed in nanoindentation measurements. The origin of these residual stresses and the associated hardening is the unirradiated substrate which constrains radiation swelling. Comparisons with other materials susceptible to irradiation swelling show that this effect should not be neglected in studying the effects of ion irradiation damage on mechanical properties. This constraint may also be influencing fundamental radiation defects. This has significant implications for the suitability of ion implantation as a surrogate for neutron irradiations. These results demonstrate the significance of swelling-induced residual stresses in nuclear reactor components, and the impact on structural integrity of reactor components.
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Submitted 30 April, 2020;
originally announced April 2020.
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Raman spectroscopy of ion irradiated SiC: chemical defects, strain, annealing, and oxidation
Authors:
Alexander J. Leide,
Matthew J. Lloyd,
Richard I. Todd,
David E. J. Armstrong
Abstract:
Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the C-C bonding region corresponding to different defect structures for neon and silicon ion implantations. Raman spectra of ion irradiated SiC show less tensile strain than neutron irradiations, explained by a residual compressive stress caus…
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Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the C-C bonding region corresponding to different defect structures for neon and silicon ion implantations. Raman spectra of ion irradiated SiC show less tensile strain than neutron irradiations, explained by a residual compressive stress caused by the swelling constrained by the undamaged substrate. Evidence of oxidation during high temperature ion implantation is observed as C-O and Si-O Raman signals. Annealing irradiated SiC while acquiring Raman spectra shows rapid recovery of Si-C bonding, but not a complete recovery of the unirradiated structure. Annealing irradiated SiC causes surface oxidation where unirradiated SiC does not oxidise. Comparisons are made to the apparent radiation resistance of diamond and silicon which have similar crystal structures, but are monatomic, leading to the suggestion that chemical defects are responsible for increased radiation damage in SiC.
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Submitted 2 July, 2020; v1 submitted 29 April, 2020;
originally announced April 2020.
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Warren-Averbach line broadening analysis from a time of flight neutron diffractometer
Authors:
David M. Collins,
Angus J. Wilkinson,
Richard I. Todd
Abstract:
The well known Warren-Averbach theory of diffraction line profile broadening is shown to be applicable to time of flight data obtained from a neutron spallation source. Without modification, the method is applied to two very different examples; a cold worked ferritic steel and a thermally stressed alumina-30% SiC composite. Values of root mean square strains averaged over a range of lengths for th…
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The well known Warren-Averbach theory of diffraction line profile broadening is shown to be applicable to time of flight data obtained from a neutron spallation source. Without modification, the method is applied to two very different examples; a cold worked ferritic steel and a thermally stressed alumina-30% SiC composite. Values of root mean square strains averaged over a range of lengths for the ferritic steel were used to estimate dislocation densities; values were found to be in good agreement with geometrically necessary dislocation densities independently measured from similarly orientated grains measured from electron backscatter diffraction analysis. An analytical model for the ceramic is described to validate the estimate of root mean square strain.
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Submitted 28 July, 2019;
originally announced July 2019.
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A Mathematical Model for Flash Sintering
Authors:
Andrew A. Lacey,
Ian J. Hewitt,
Richard I. Todd
Abstract:
A mathematical model is presented for the Joule heating that occurs in a ceramic powder compact during the process of flash sintering. The ceramic is assumed to have an electrical conductivity that increases with temperature, and this leads to the possibility of runaway heating that could facilitate and explain the rapid sintering seen in experiments. We consider reduced models that are sufficient…
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A mathematical model is presented for the Joule heating that occurs in a ceramic powder compact during the process of flash sintering. The ceramic is assumed to have an electrical conductivity that increases with temperature, and this leads to the possibility of runaway heating that could facilitate and explain the rapid sintering seen in experiments. We consider reduced models that are sufficiently simple to enable concrete conclusions to be drawn about the mathematical nature of their solutions. In particular we discuss how different local and non-local reaction terms, which arise from specified experimental conditions of fixed voltage and current, lead to thermal runaway or to stable conditions. We identify incipient thermal runaway as a necessary condition for the flash event, and hence identify the conditions under which this is likely to occur.
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Submitted 14 December, 2015;
originally announced December 2015.
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A Trapped Field of >3T in Bulk MgB2 Fabricated by Uniaxial Hot Pressing
Authors:
J. H. Durrell,
C. E. J. Dancer,
A. Dennis,
Y. Shi,
Z. Xu,
A. M. Campbell,
N. H. Babu,
R. I. Todd,
C. R. M. Grovenor,
D. A. Cardwell
Abstract:
A trapped field of over 3 T has been measured at 17.5 K in a magnetised stack of two disc-shaped bulk MgB2 superconductors of diameter 25 mm and thickness 5.4 mm. The bulk MgB2 samples were fabricated by uniaxial hot pressing, which is a readily scalable, industrial technique, to 91% of their maximum theoretical density. The macroscopic critical current density derived from the trapped field data…
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A trapped field of over 3 T has been measured at 17.5 K in a magnetised stack of two disc-shaped bulk MgB2 superconductors of diameter 25 mm and thickness 5.4 mm. The bulk MgB2 samples were fabricated by uniaxial hot pressing, which is a readily scalable, industrial technique, to 91% of their maximum theoretical density. The macroscopic critical current density derived from the trapped field data using the Biot-Savart law is consistent with the measured local critical current density. From this we conclude that critical current density, and therefore trapped field performance, is limited by the flux pinning available in MgB2, rather than by lack of connectivity. This suggests strongly that both increasing sample size and enhancing pinning through doping will allow further increases in trapped field performance of bulk MgB2.
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Submitted 28 September, 2012; v1 submitted 30 July, 2012;
originally announced July 2012.
