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Tunable tunnel barriers in a semiconductor via ionization of individual atoms
Authors:
Sara M. Mueller,
Dongjoon Kim,
Stephen R. McMillan,
Steven J. Tjung,
Jacob J. Repicky,
Stephen Gant,
Evan Lang,
Fedor Bergmann,
Kevin Werner,
Enam Chowdhury,
Aravind Asthagiri,
Michael E. Flatte,
Jay A. Gupta
Abstract:
We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We att…
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We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We attribute the effect to occupation of a (+/0) charge transition level, and switching of the associated adatom-induced band bending. The effect in STM topographic images is well reproduced by transport modeling of filling and emptying rates as a function of the tip position. STM atomic contrast and tunneling spectra are in good agreement with density functional theory calculations for In adatoms. The adatom ionization effect can extend to distances greater than 50 nm away, which we attribute to the low concentration and low binding energy of the residual donors in the undoped InSb crystal. These studies demonstrate how individual atoms can be used to sensitively control current flow in nanoscale devices.
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Submitted 15 June, 2020; v1 submitted 9 September, 2019;
originally announced September 2019.
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Surface Structures of Epitaxial B20 FeGe(-1-1-1) Thin Films via Scanning Tunneling Microscopy
Authors:
J. P. Corbett,
T. Zhu,
A. S. Ahmed,
S. J. Tjung,
J. J. Repicky,
T. Takeuchi,
R. K. Kawakami,
J. A. Gupta
Abstract:
We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffra…
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We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffraction resulting in a size of ~6.84 Å in agreement with the bulk expectation. Furthermore, the atomic resolution and registry across triple-layer step edges definitively determine the grain orientation as (111) or (-1-1-1). Further verification of the grain orientation is made by Ar+ sputtering FeGe(-1-1-1) surface allowing direct imaging of the subsurface layer.
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Submitted 2 July, 2018;
originally announced July 2018.
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STM and DFT studies of CO2 adsorption on Cu(100)-O surface
Authors:
Steven J. Tjung,
Qiang Zhang,
Jacob J. Repicky,
Simuck F. Yuk,
Xiaowa Nie,
Nancy M. Santagata,
Aravind Asthagiri,
Jay A. Gupta
Abstract:
We characterized CO2 adsorption and diffusion on the missing row reconstructed Cu(100)-O surface using a combination of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations with dispersion. We deposited CO2 molecules in situ at 5K, which allowed us to unambiguously identify individual CO2 molecules and their adsorption sites. Based on a comparison of experimental an…
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We characterized CO2 adsorption and diffusion on the missing row reconstructed Cu(100)-O surface using a combination of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations with dispersion. We deposited CO2 molecules in situ at 5K, which allowed us to unambiguously identify individual CO2 molecules and their adsorption sites. Based on a comparison of experimental and DFT-generated STM images, we find that the CO2 molecules sit in between the O atoms in the missing row reconstructed Cu(100)-O surface. The CO2 molecules are easily perturbed by the STM tip under typical imaging conditions, suggesting that the molecules are weakly bound to the surface. The calculated adsorption energy, vibrational modes, and diffusion barriers of the CO2 molecules also indicate weak adsorption, in qualitative agreement with the experiments. A comparison of tunneling spectroscopy and DFT-calculated density of states shows that the primary change near the Fermi level is associated with changes to the surface states with negligible contribution from the CO2 molecular states.
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Submitted 7 June, 2018;
originally announced June 2018.
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Crystalline hydrogenation of graphene by STM tip-induced field dissociation of H$_2$
Authors:
S. J. Tjung,
S. M. Hollen,
G. A. Gambrel,
N. M. Santagata,
E. Johnston-Halperin,
J. A. Gupta
Abstract:
We have developed a novel method for crystalline hydrogenation of graphene on the nanoscale. Molecular hydrogen was physisorbed at 5 K onto pristine graphene islands grown on Cu(111) in ultrahigh vacuum. Field emission local to the tip of a scanning tunneling microscope dissociates H$_2$ and results in hydrogenated graphene. At lower coverage, isolated point defects are found on the graphene and a…
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We have developed a novel method for crystalline hydrogenation of graphene on the nanoscale. Molecular hydrogen was physisorbed at 5 K onto pristine graphene islands grown on Cu(111) in ultrahigh vacuum. Field emission local to the tip of a scanning tunneling microscope dissociates H$_2$ and results in hydrogenated graphene. At lower coverage, isolated point defects are found on the graphene and are attributed to chemisorbed H on top and bottom surfaces. Repeated H$_2$ exposure and field emission yielded patches and then complete coverage of a crystalline $\sqrt{3}$ $\times$ $\sqrt{3}$ R30° phase, as well as less densely packed 3 $\times$ 3 and 4 $\times$ 4 structures. The hydrogenation can be reversed by imaging with higher bias voltage.
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Submitted 3 June, 2017; v1 submitted 31 December, 2016;
originally announced January 2017.
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Native defects in ultra-high vacuum grown graphene islands on Cu(111)
Authors:
S. M. Hollen,
S. J. Tjung,
K. R. Mattioli,
G. A. Gambrel,
N. M. Santagata,
E. Johnston-Halperin,
J. A. Gupta
Abstract:
We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum (UHV) decomposition of ethylene on Cu(111). We characterize these defects through a survey of their apparent heights, atomic-resolution imaging, and detailed tunneling spectroscopy. Bright defects that occur only in graphene regions are identified as C site point defects in the g…
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We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum (UHV) decomposition of ethylene on Cu(111). We characterize these defects through a survey of their apparent heights, atomic-resolution imaging, and detailed tunneling spectroscopy. Bright defects that occur only in graphene regions are identified as C site point defects in the graphene lattice and are most likely single C vacancies. Dark defect types are observed in both graphene and Cu regions, and are likely point defects in the Cu surface. We also present data showing the importance of bias and tip termination to the appearance of the defects in STM images and the ability to achieve atomic resolution. Finally, we present tunneling spectroscopy measurements probing the influence of point defects on the local electronic landscape of graphene islands.
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Submitted 19 May, 2015;
originally announced May 2015.
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Modification of electronic surface states by graphene islands on Cu(111)
Authors:
S. M. Hollen,
G. A. Gambrel,
S. J. Tjung,
N. M. Santagata,
E. Johnston-Halperin,
J. A. Gupta
Abstract:
We present a study of graphene/substrate interactions on UHV-grown graphene islands with minimal surface contamination using \emph{in situ} low-temperature scanning tunneling microscopy (STM). We compare the physical and electronic structure of the sample surface with atomic spatial resolution on graphene islands versus regions of bare Cu(111) substrate. We find that the Rydberg-like series of ima…
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We present a study of graphene/substrate interactions on UHV-grown graphene islands with minimal surface contamination using \emph{in situ} low-temperature scanning tunneling microscopy (STM). We compare the physical and electronic structure of the sample surface with atomic spatial resolution on graphene islands versus regions of bare Cu(111) substrate. We find that the Rydberg-like series of image potential states is shifted toward lower energy over the graphene islands relative to Cu(111), indicating a decrease in the local work function, and the resonances have a much smaller linewidth, indicating reduced coupling to the bulk. In addition, we show the dispersion of the occupied Cu(111) Shockley surface state is influenced by the graphene layer, and both the band edge and effective mass are shifted relative to bare Cu(111).
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Submitted 19 May, 2015;
originally announced May 2015.
