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Microscopic origin of the Drude-Smith model
Authors:
Tyler L. Cocker,
Devin Baillie,
Miles Buruma,
Lyubov V. Titova,
Richard D. Sydora,
Frank Marsiglio,
Frank A. Hegmann
Abstract:
The Drude-Smith model has been used extensively in fitting the THz conductivities of nanomaterials with carrier confinement on the mesoscopic scale. Here, we show that the conventional 'backscattering' explanation for the suppression of low-frequency conductivities in the Drude-Smith model is not consistent with a confined Drude gas of classical non-interacting electrons and we derive a modified D…
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The Drude-Smith model has been used extensively in fitting the THz conductivities of nanomaterials with carrier confinement on the mesoscopic scale. Here, we show that the conventional 'backscattering' explanation for the suppression of low-frequency conductivities in the Drude-Smith model is not consistent with a confined Drude gas of classical non-interacting electrons and we derive a modified Drude-Smith conductivity formula based on a diffusive restoring current. We perform Monte Carlo simulations of a model system and show that the modified Drude-Smith model reproduces the extracted conductivities without free parameters. This alternate route to the Drude-Smith model provides the popular formula with a more solid physical foundation and well-defined fit parameters.
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Submitted 26 October, 2017; v1 submitted 29 May, 2017;
originally announced May 2017.
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Low-Temperature Optical Characterization of Single CdS Nanowires
Authors:
L. V. Titova,
Thang B. Hoang,
H. E. Jackson,
L. M. Smith,
J. M. Yarrison-Rice,
J. L. Lensch,
L. J. Lauhon
Abstract:
We use spatially resolved micro-PL imaging at low temperature to study optical properties of two sets of CdS nanowires grown using 20 nm and 50 nm catalysts. We find that low temperature PL of single nanowires is an ideal technique to gauge the quality of a given growth run, and moreover enables the collection of detailed spatial information on single wire electronic states.
We use spatially resolved micro-PL imaging at low temperature to study optical properties of two sets of CdS nanowires grown using 20 nm and 50 nm catalysts. We find that low temperature PL of single nanowires is an ideal technique to gauge the quality of a given growth run, and moreover enables the collection of detailed spatial information on single wire electronic states.
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Submitted 2 August, 2006;
originally announced August 2006.
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Imaging and optical properties of single core-shell GaAs-AlGaAs nanowires
Authors:
Thang B. Hoang,
L. V. Titova,
H. E. Jackson,
L. M. Smith,
J. M. Yarrison-Rice,
Y. Kim,
H. J. Joyce,
C. Jagadish
Abstract:
We study the optical properties of a single core-shell GaAs-AlGaAs nanowire (grown by VLS method) using the technique of micro-photoluminescence and spatially-resolved photoluminescence imaging. We observe large linear polarization anisotropy in emission and excitation of nanowires.
We study the optical properties of a single core-shell GaAs-AlGaAs nanowire (grown by VLS method) using the technique of micro-photoluminescence and spatially-resolved photoluminescence imaging. We observe large linear polarization anisotropy in emission and excitation of nanowires.
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Submitted 2 August, 2006;
originally announced August 2006.
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Temperature dependent photoluminescence of single CdS nanowires
Authors:
Thang Ba Hoang,
L. V. Titova,
H. E. Jackson,
L. M. Smith,
J. M. Yarrison-Rice,
J. L. Lensch,
L. J. Lauhon
Abstract:
Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near-band edge (NBE) photoluminescence (PL) and spatially-localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is r…
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Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near-band edge (NBE) photoluminescence (PL) and spatially-localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from nanowires follow closely the temperature-dependent band edge, similar to that observed in bulk CdS.
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Submitted 15 June, 2006;
originally announced June 2006.
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Low temperature photoluminescence imaging and time-resolved spectroscopy of single CdS nanowires
Authors:
L. V. Titova,
Thang Ba Hoang,
H. E. Jackson,
L. M. Smith,
J. M. Yarrison-Rice,
J. L. Lensch,
L. J. Lauhon
Abstract:
Time-resolved photoluminescence (PL) and micro-PL imaging were used to study single CdS nanowires at 10 K. The low-temperature PL of all CdS nanowires exhibit spectral features near energies associated with free and bound exciton transitions, with the transition energies and emission intensities varying along the length of the nanowire. In addition, several nanowires show spatially localized PL…
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Time-resolved photoluminescence (PL) and micro-PL imaging were used to study single CdS nanowires at 10 K. The low-temperature PL of all CdS nanowires exhibit spectral features near energies associated with free and bound exciton transitions, with the transition energies and emission intensities varying along the length of the nanowire. In addition, several nanowires show spatially localized PL at lower energies which are associated with morphological irregularities in the nanowires. Time-resolved PL measurements indicate that exciton recombination in all CdS nanowires is dominated by non-radiative recombination at the surface of the nanowires.
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Submitted 15 June, 2006;
originally announced June 2006.
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Perpendicular magnetization reversal, magnetic anisotropy, multi-step spin switching, and domain nucleation and expansion in Ga1-xMnxAs films
Authors:
X. Liu,
W. L. Lim,
L. V. Titova,
M. Dobrowolska,
J. K. Furdyna,
M. Kutrowski,
T. Wojtowicz
Abstract:
We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1-xMnxAs. For this investigation we have purposely chosen Ga1-xMnxAs with a low Mn concentration (x ~ 0.02), since in such specimens contributions of cubic and uniaxial anisotropy parameters are comparable, allowing us to identify the role of both types of a…
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We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1-xMnxAs. For this investigation we have purposely chosen Ga1-xMnxAs with a low Mn concentration (x ~ 0.02), since in such specimens contributions of cubic and uniaxial anisotropy parameters are comparable, allowing us to identify the role of both types of anisotropy in the magnetic reversal process. As a first step we have systematically mapped out the angular dependence of ferromagnetic resonance in thin Ga1-xMnxAs layers, which is a highly effective tool for obtaining the magnetic anisotropy parameters of the material. The process of perpendicular magnetization reversal was then studied by magneto-transport (i.e., Hall effect and planar Hall effect measurements). These measurements enable us to observe coherent spin rotation and non-coherent spin switching between the (100) and (010) planes. A model is proposed to explain the observed multi-step spin switching. The agreement of the model with experiment indicates that it can be reliably used for determining magnetic anisotropy parameters from magneto-transport data. An interesting characteristic of perpendicular magnetization reversal in Ga1-xMnxAs with low x is the appearance of a double hysteresis loops in the magnetization data. This double-loop behavior can be understood by generalizing the proposed model to include the processes of domain nucleation and expansion.
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Submitted 12 May, 2005;
originally announced May 2005.
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External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures
Authors:
X. Liu,
W. L. Lim,
L. V. Titova,
T. Wojtowicz,
M. Kutrowski,
K. J. Yee,
M. Dobrowolska,
J. K. Furdyna,
S. J. Potashnik,
M. B. Stone,
P. Schiffer,
I. Vurgaftman,
J. R. Meyer
Abstract:
In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect (MOKE) measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperat…
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In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect (MOKE) measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperatures we observe that the magnetization direction in several samples is intermediate between the normal and in-plane axes. As the temperature increases, however, the easy axis rotates to the direction normal to the plane. We further demonstrate that the easy magnetization axis can be controlled by incident light through a bolometric effect, which induces a pronounced increase in the amplitude of the AHE. A mean-field-theory model for the carrier-mediated ferromagnetism reproduces the tendency for dramatic reorientations of the magnetization axis, but not the specific sensitivity to small temperature variations.
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Submitted 28 August, 2003;
originally announced August 2003.
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Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys
Authors:
T. Wojtowicz,
W. L. Lim,
X. Liu,
G. Cywinski,
M. Kutrowski,
L. V. Titova,
K. Yee,
M. Dobrowolska,
J. K. Furdyna,
K. M. Yu,
W. Walukiewicz,
G. B. Kim,
M. Cheon,
X. Chen,
S. M. Wang,
H. Luo,
I. Vurgaftman,
J. R. Meyer
Abstract:
We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system…
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We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.
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Submitted 1 July, 2003;
originally announced July 2003.
