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The unconventional two-parameter quantum valley pumping in graphene with a topological line defect
Authors:
C D Ren,
L Cui,
W T Lu,
H Y Tian,
S K Wang
Abstract:
Based on the Keldysh Green's function method, we report an unconventional two-parameter quantum pumping in graphene with a line defect. It is found that different from the conventional sinusoidal relation, the pumped current in this device is cosinusoid dependence on the phase difference between the two pumping potentials, which adopts its positive/nagative maximum value at while tends to zero at…
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Based on the Keldysh Green's function method, we report an unconventional two-parameter quantum pumping in graphene with a line defect. It is found that different from the conventional sinusoidal relation, the pumped current in this device is cosinusoid dependence on the phase difference between the two pumping potentials, which adopts its positive/nagative maximum value at while tends to zero at . This phenomenon is related to the peculiar valley tunneling characteristics across the line defects and the exchange of valley indices on both sides of the line defect. Moreover, the pumped currents from the two valleys will flow in opposite directions along the line defect, indicating that the controllable valley current can be pumped out in the line defect without the application of strain field in graphene.
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Submitted 23 November, 2021;
originally announced November 2021.
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Integer quantum Hall effect and topological phase transitions in silicene
Authors:
Y. L. Liu,
G. X. Luo,
N. Xu,
H. Y. Tian,
C. D. Ren
Abstract:
We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at $ν=0,\pm2,\pm6,\ldots,$ and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus ca…
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We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at $ν=0,\pm2,\pm6,\ldots,$ and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center, in which higher plateaus disappear first. However, the center $ν=0$ Hall plateau is more sensitive to disorder and disappears at a relatively weak disorder strength. Moreover, the combination of an electric field and the intrinsic spin-orbit interaction (SOI) can lead to quantum phase transitions from a topological insulator to a band insulator at the charge neutrality point (CNP), accompanied by additional quantum Hall conductivity plateaus.
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Submitted 14 December, 2017;
originally announced December 2017.
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Small-polaron coherent conduction in lightly doped ReTiO$_{3+ δ/2}$ (Re=La or Nd) thin films prepared by Pulsed Laser Deposition
Authors:
J. Li,
F. B. Wang,
P. Wang,
M. J. Zhang,
H. Y. Tian,
D. N. Zheng
Abstract:
LaTiO$_{3+δ/2}$, NdTiO$_{3+δ/2}$, and Nd$_{1-x}$Sr$_{x}$TiO$_{3+δ/2}$ thin films have been epitaxially grown on (100)SrTiO$_{3}$ and (100)LaAlO$_{3}$ single crystal substrates by using the pulsed laser deposition technique. The oxygen pressure during deposition has been carefully controlled to ensure that the films are lightly doped in the metal side near the metal-Mott-insulator boundary. A ste…
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LaTiO$_{3+δ/2}$, NdTiO$_{3+δ/2}$, and Nd$_{1-x}$Sr$_{x}$TiO$_{3+δ/2}$ thin films have been epitaxially grown on (100)SrTiO$_{3}$ and (100)LaAlO$_{3}$ single crystal substrates by using the pulsed laser deposition technique. The oxygen pressure during deposition has been carefully controlled to ensure that the films are lightly doped in the metal side near the metal-Mott-insulator boundary. A steep drop of the effective carrier number at low temperatures has been observed in some of the films, which may correspond to a gradually opening of the Spin Density Wave (SDW) gap due to the antiferromagnetic spin fluctuations. At elevated temperatures, a thermally induced decrease of the Hall coefficient can also be clearly observed. In spite of the fact that these films were prepared from different materials in varied deposition conditions, the temperature dependence of their resistance can all be almost perfectly fitted by a small-polaron coherent conduction model ($R_s(T)=R_s(0)+Cω_α/\sinh^2(T_ω/T)$). Careful investigation on the fitting parameters implies that the frequency of the phonon coupled to the electrons may be partially related to the lattice distortion induced by the mismatch strain of the substrates.
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Submitted 9 March, 2006;
originally announced March 2006.
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Superconducting properties and c-axis superstructure of Mg1-xAlxB2
Authors:
J. Y. Xiang,
D. N. Zheng,
J. Q. Li,
L. Li,
P. L. Lang,
H. Chen,
C. Dong,
G. C. Che,
Z. A. Ren,
H. H. Qi,
H. Y. Tian,
Y. M. Ni,
Z. X. Zhao
Abstract:
The superconducting and structural properties of a series of Mg1-xAlxB2 samples have been investigated. X-ray diffraction results confirmed the existence of a structural transition associated with the significant change in inter-boron layer distance as reported previously by Slusky et al. Moreover,transmission-electron-microscopy observations revealed the existence of a superstructure with doubl…
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The superconducting and structural properties of a series of Mg1-xAlxB2 samples have been investigated. X-ray diffraction results confirmed the existence of a structural transition associated with the significant change in inter-boron layer distance as reported previously by Slusky et al. Moreover,transmission-electron-microscopy observations revealed the existence of a superstructure with doubled lattice constant along the c-axis direction. We propose that this superstructure is essentially related to the structural transition. The modifications of superconducting transition temperature Tc, the normal state resistivity, and the upper critical field Bc2 by Al doping are discussed in terms of Al-substitution induced changes in the electronic structure at the Fermi energy.
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Submitted 11 March, 2002; v1 submitted 19 April, 2001;
originally announced April 2001.
