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Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films
Authors:
Dongxue Du,
Laxman Raju Thoutam,
Konrad T. Genser,
Chenyu Zhang,
Karin M. Rabe,
Bharat Jalan,
Paul M. Voyles,
Jason K. Kawasaki
Abstract:
We examine the effects of Pt vacancies on the magnetotransport properties of Weyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy on c-plane sapphire. Rutherford backscattering spectrometry (RBS) and x-ray diffraction measurements suggest that phase pure GdPt$_{x}$Sb films can accommodate up to $15\%$ Pt vacancies ($x=0.85$), which act as acceptors as measured by Hall effect. Two…
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We examine the effects of Pt vacancies on the magnetotransport properties of Weyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy on c-plane sapphire. Rutherford backscattering spectrometry (RBS) and x-ray diffraction measurements suggest that phase pure GdPt$_{x}$Sb films can accommodate up to $15\%$ Pt vacancies ($x=0.85$), which act as acceptors as measured by Hall effect. Two classes of electrical transport behavior are observed. Pt-deficient films display a metallic temperature dependent resistivity (d$ρ$/dT$>$0). The longitudinal magnetoresistance (LMR, magnetic field $\mathbf{B}$ parallel to electric field $\mathbf{E}$) is more negative than transverse magnetoresistance (TMR, $\mathbf{B} \perp \mathbf{E}$), consistent with the expected chiral anomaly for a Weyl semimetal. The combination of Pt-vacancy disorder and doping away from the expected Weyl nodes; however, suggests conductivity fluctuations may explain the negative LMR rather than chiral anomaly. Samples closer to stoichiometry display the opposite behavior: semiconductor-like resistivity (d$ρ$/dT$<$0) and more negative transverse magnetoresistance than longitudinal magnetoresistance. Hysteresis and other nonlinearities in the low field Hall effect and magnetoresistance suggest that spin disorder scattering, and possible topological Hall effect, may dominate the near stoichiometric samples. Our findings highlight the complications of transport-based identification of Weyl nodes, but point to possible topological spin textures in GdPtSb.
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Submitted 7 April, 2023;
originally announced April 2023.
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Temperature-driven changes in the Fermi surface of graphite
Authors:
Laxman R. Thoutam,
Samuel E. Pate,
Tingting Wang,
Yong-Lei Wang,
Ralu Divan,
Ivar Martin,
Adina Luican-Mayer,
Ulrich Welp,
Wai-Kwong Kwok,
Zhi-Li Xiao
Abstract:
We report on temperature-dependent size and anisotropy of the Fermi pockets in graphite revealed by magnetotransport measurements. The magnetoresistances obtained in fields along the c-axis obey an extended Kohler's rule, with the carrier density following prediction of a temperature-dependent Fermi energy, indicating a change in the Fermi pocket size with temperature. The angle-dependent magnetor…
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We report on temperature-dependent size and anisotropy of the Fermi pockets in graphite revealed by magnetotransport measurements. The magnetoresistances obtained in fields along the c-axis obey an extended Kohler's rule, with the carrier density following prediction of a temperature-dependent Fermi energy, indicating a change in the Fermi pocket size with temperature. The angle-dependent magnetoresistivities at a given temperature exhibit a scaling behavior. The scaling factor that reflects the anisotropy of the Fermi surface is also found to vary with temperature. Our results demonstrate that temperature-driven changes in Fermi surface can be ubiquitous and need to be considered in understanding the temperature-dependent carrier density and magnetoresistance anisotropy in semimetals.
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Submitted 17 September, 2022;
originally announced September 2022.
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Extended Kohler$^,$s Rule of Magnetoresistance
Authors:
Jing Xu,
Fei Han,
Ting-Ting Wang,
Laxman R. Thoutam,
Samuel E. Pate,
Mingda Li,
Xufeng Zhang,
Yong-Lei Wang,
Roxanna Fotovat,
Ulrich Welp,
Xiuquan Zhou,
Wai-Kwong Kwok,
Duck Young Chung,
Mercouri G. Kanatzidis,
Zhi-Li Xiao
Abstract:
A notable phenomenon in topological semimetals is the violation of Kohler$^,$s rule, which dictates that the magnetoresistance $MR$ obeys a scaling behavior of $MR = f(H/ρ_0$), where $MR = [ρ_H-ρ_0]/ρ_0$ and $H$ is the magnetic field, with $ρ_H$ and $ρ_0$ being the resistivity at $H$ and zero field, respectively. Here we report a violation originating from thermally-induced change in the carrier d…
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A notable phenomenon in topological semimetals is the violation of Kohler$^,$s rule, which dictates that the magnetoresistance $MR$ obeys a scaling behavior of $MR = f(H/ρ_0$), where $MR = [ρ_H-ρ_0]/ρ_0$ and $H$ is the magnetic field, with $ρ_H$ and $ρ_0$ being the resistivity at $H$ and zero field, respectively. Here we report a violation originating from thermally-induced change in the carrier density. We find that the magnetoresistance of the Weyl semimetal, TaP, follows an extended Kohler$^,$s rule $MR = f[H/(n_Tρ_0)]$, with $n_T$ describing the temperature dependence of the carrier density. We show that $n_T$ is associated with the Fermi level and the dispersion relation of the semimetal, providing a new way to reveal information on the electronic bandstructure. We offer a fundamental understanding of the violation and validity of Kohler$^,$s rule in terms of different temperature-responses of $n_T$. We apply our extended Kohler$^,$s rule to BaFe$_2$(As$_{1-x}$P$_x$)$_2$ to settle a long-standing debate on the scaling behavior of the normal-state magnetoresistance of a superconductor, namely, $MR$ ~ $tan^2θ_H$, where $θ_H$ is the Hall angle. We further validate the extended Kohler$^,$s rule and demonstrate its generality in a semiconductor, InSb, where the temperature-dependent carrier density can be reliably determined both theoretically and experimentally.
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Submitted 16 September, 2021;
originally announced September 2021.
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Anomalous Transport in High-Mobility Superconducting SrTiO$_3$ Thin Films
Authors:
Jin Yue,
Yilikal Ayino,
Tristan K. Truttmann,
Maria N. Gastiasoro,
Eylon Persky,
Alex Khanukov,
Dooyong Lee,
Laxman R. Thoutam,
Beena Kalisky,
Rafael M. Fernandes,
Vlad S. Pribiag,
Bharat Jalan
Abstract:
The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000 cm$^2$V$^{-1}$s$^{-1}$ at low carrier density of 3 x 10$^{17}$ cm$^{-3}$ were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhanceme…
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The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000 cm$^2$V$^{-1}$s$^{-1}$ at low carrier density of 3 x 10$^{17}$ cm$^{-3}$ were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhancement in the superconducting transition temperature were observed across the second Lifshitz transition (LT) where the third band becomes occupied, revealing dominant intra-band scattering. These films further revealed an anomalous behavior in the Hall carrier density as a consequence of the antiferrodistortive (AFD) transition and the temperature-dependence of the Hall scattering factor. Using hybrid MBE growth, phenomenological modeling, temperature-dependent transport measurements, and scanning superconducting quantum interference device imaging, we provide critical insights into the important role of inter- vs intra-band scattering and of AFD domain walls on normal-state and superconducting properties of SrTiO$_3$.
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Submitted 22 July, 2021;
originally announced July 2021.
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Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior
Authors:
Laxman Raju Thoutam,
Tristan K. Truttmann,
Anil Kumar Rajapitamahuni,
Bharat Jalan
Abstract:
Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide thin films and heterostructures. Here, magnetotransport is investigated in a non-magnetic uniformly La-doped SrSnO3 film grown using hybrid molecular beam epitaxy. A 12 nm La:SrSnO3/2 nm SrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresis loop in the MR at T < 5 K accomp…
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Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide thin films and heterostructures. Here, magnetotransport is investigated in a non-magnetic uniformly La-doped SrSnO3 film grown using hybrid molecular beam epitaxy. A 12 nm La:SrSnO3/2 nm SrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresis loop in the MR at T < 5 K accompanied by an anomaly at ~ +/- 3 T at T < 2.5 K. Furthermore, MR with the field in-plane yielded a value exceeded 100% at 1.8 K. Using detailed temperature-, angle- and magnetic field-dependent resistance measurements, we illustrate the origin of hysteresis is not due to magnetism in the film but rather is associated with the magnetocaloric effect of the GdScO3 substrate. Given GdScO3 and similar substrates are commonly used in complex oxide research, this work highlights the importance of thermal coupling to processes in the substrates which must be carefully accounted for in the data interpretation for thin films and heterostructures utilizing these substrates.
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Submitted 11 July, 2021;
originally announced July 2021.
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Growth and characterization of large (Y,La)TiO$_3$ and (Y,Ca)TiO$_3$ single crystals
Authors:
S. Hameed,
J. Joe,
L. R. Thoutam,
J. Garcia-Barriocanal,
B. Yu,
G. Yu,
S. Chi,
T. Hong,
T. J. Williams,
J. W. Freeland,
P. M. Gehring,
Z. Xu,
M. Matsuda,
B. Jalan,
M. Greven
Abstract:
The Mott-insulating rare-earth titanates (RTiO$_3$, R being a rare-earth ion) are an important class of materials that encompasses interesting spin-orbital phases as well as ferromagnet-antiferromagnet and insulator-metal transitions. The growth of these materials has been plagued by difficulties related to overoxidation, which arises from a strong tendency of Ti$^{3+}$ to oxidize to Ti$^{4+}$. We…
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The Mott-insulating rare-earth titanates (RTiO$_3$, R being a rare-earth ion) are an important class of materials that encompasses interesting spin-orbital phases as well as ferromagnet-antiferromagnet and insulator-metal transitions. The growth of these materials has been plagued by difficulties related to overoxidation, which arises from a strong tendency of Ti$^{3+}$ to oxidize to Ti$^{4+}$. We describe our efforts to grow sizable single crystals of YTiO$_3$ and its La-substituted and Ca-doped variants with the optical travelling-solvent floating-zone technique. We present sample characterization $via$ chemical composition analysis, magnetometry, charge transport, neutron scattering, x-ray absorption spectroscopy and x-ray magnetic circular dichroism to understand macroscopic physical property variations associated with overoxidation. Furthermore, we demonstrate a good signal-to-noise ratio in inelastic magnetic neutron scattering measurements of spin-wave excitations. A superconducting impurity phase, found to appear in Ca-doped samples at high doping levels, is identified as TiO.
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Submitted 18 June, 2021;
originally announced June 2021.
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Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films
Authors:
Anil Kumar Rajapitamahuni,
Laxman Raju Thoutam,
Praneeth Ranga,
Sriram Krishnamoorthy,
Bharat Jalan
Abstract:
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics i…
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By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics in both bands yielding donor state energies of ~ 33.7 and ~ 45.6 meV. The former is consistent with the donor energy of Si in \b{eta}-Ga2O3 whereas the latter suggests a residual donor state, likely associated with a DX center. This study provides a critical insight into the impurity band conduction and the defect energy states in \b{eta}-Ga2O3 using high-field magnetotransport measurements.
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Submitted 1 October, 2020;
originally announced October 2020.
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Electronic Structure and Small Hole Polarons in YTiO3
Authors:
Jin Yue,
Nicholas F. Quackenbush,
Iflah Laraib,
Henry Carfagno,
Sajna Hameed,
Abhinav Prakash,
Laxman R. Thoutam,
James M. Ablett,
Tien-Lin Lee,
Martin Greven,
Matthew F. Doty,
Anderson Janotti,
Bharat Jalan
Abstract:
As a prototypical Mott insulator with ferromagnetic ordering, YTiO3 (YTO) is of great interest in the study of strong electron correlation effects and orbital ordering. Here we report the first molecular beam epitaxy (MBE) growth of YTO films, combined with theoretical and experimental characterization of the electronic structure and charge transport properties. The obstacles of YTO MBE growth are…
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As a prototypical Mott insulator with ferromagnetic ordering, YTiO3 (YTO) is of great interest in the study of strong electron correlation effects and orbital ordering. Here we report the first molecular beam epitaxy (MBE) growth of YTO films, combined with theoretical and experimental characterization of the electronic structure and charge transport properties. The obstacles of YTO MBE growth are discussed and potential routes to overcome them are proposed. DC transport and Seebeck measurements on thin films and bulk single crystals identify p-type Arrhenius transport behavior, with an activation energy of ~ 0.17 eV in thin films, consistent with the energy barrier for small hole polaron migration from hybrid density functional theory (DFT) calculations. Hard X-ray photoelectron spectroscopy measurements (HAXPES) show the lower Hubbard band (LHB) at 1.1 eV below the Fermi level, whereas a Mott-Hubbard band gap of ~1.5 eV is determined from photoluminescence (PL) measurements. These findings provide critical insight into the electronic band structure of YTO and related materials.
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Submitted 28 August, 2020;
originally announced August 2020.
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Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films
Authors:
Jin Yue,
Laxman R. Thoutam,
Abhinav Prakash,
Tianqi Wang,
Bharat Jalan
Abstract:
Contrary to the common belief that electron-electron interaction (EEI) should be negligible in s-orbital-based conductors, we demonstrated that the EEI effect could play a significant role on electronic transport leading to the misinterpretation of the Hall data. We show that the EEI effect is primarily responsible for an increase in the Hall coefficient in the La-doped SrSnO3 films below 50 K acc…
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Contrary to the common belief that electron-electron interaction (EEI) should be negligible in s-orbital-based conductors, we demonstrated that the EEI effect could play a significant role on electronic transport leading to the misinterpretation of the Hall data. We show that the EEI effect is primarily responsible for an increase in the Hall coefficient in the La-doped SrSnO3 films below 50 K accompanied by an increase in the sheet resistance. The quantitative analysis of the magnetoresistance (MR) data yielded a large phase coherence length of electrons exceeding 450 nm at 1.8 K and revealed the electron-electron interaction being accountable for breaking of electron phase coherency in La-doped SrSnO3 films. These results while providing critical insights into the fundamental transport behavior in doped stannates also indicate the potential applications of stannates in quantum coherent electronic devices owing to their large phase coherence length.
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Submitted 19 May, 2019;
originally announced May 2019.
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Hopping Transport in SrTiO3/Nd1-xTiO3/SrTiO3 Heterostructures
Authors:
Laxman Raju Thoutam,
Jin Yue,
Peng Xu,
Bharat Jalan
Abstract:
Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd-vacancies introduce localized electronic states resulting in the variable range hopping transport at low temperatures. At a fixed Nd-vacancies concentration, a crossover…
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Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd-vacancies introduce localized electronic states resulting in the variable range hopping transport at low temperatures. At a fixed Nd-vacancies concentration, a crossover from Mott to Efros-Shklovskii (ES) variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length as a function of disorder. These findings highlight the important role of stoichiometry when exploring intrinsic effect using heterostructure and interfaces in addition to offering broad opportunity to tailor low temperature transport using non-stoichiometry defects.
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Submitted 27 November, 2018;
originally announced November 2018.
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Parallel magnetic field suppresses dissipation in superconducting nanostrips
Authors:
Yong-Lei Wang,
Andreas Glatz,
Gregory J. Kimmel,
Igor S. Aranson,
Laxman R. Thoutam,
Zhi-Li Xiao,
Golibjon R. Berdiyorov,
Francois M. Peeters,
George W. Crabtree,
Wai-Kwong Kwok
Abstract:
The motion of Abrikosov vortices in type-II superconductors results in a finite resistance in the presence of an applied electric current. Elimination or reduction of the resistance via immobilization of vortices is the "holy grail" of superconductivity research. Common wisdom dictates that an increase in the magnetic field escalates the loss of energy since the number of vortices increases. Here…
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The motion of Abrikosov vortices in type-II superconductors results in a finite resistance in the presence of an applied electric current. Elimination or reduction of the resistance via immobilization of vortices is the "holy grail" of superconductivity research. Common wisdom dictates that an increase in the magnetic field escalates the loss of energy since the number of vortices increases. Here we show that this is no longer true if the magnetic field and the current are applied parallel to each other.Our experimental studies on the resistive behavior of a superconducting Mo$_{0.79}$Ge$_{0.21}$ nanostrip reveal the emergence of a dissipative state with increasing magnetic field, followed by a pronounced resistance drop, signifying a reentrance to the superconducting state. Large-scale simulations of the 3D time-dependent Ginzburg-Landau model indicate that the intermediate resistive state is due to an unwinding of twisted vortices. When the magnetic field increases, this instability is suppressed due to a better accommodation of the vortex lattice to the pinning configuration. Our findings show that magnetic field and geometrical confinement can suppress the dissipation induced by vortex motion and thus radically improve the performance of superconducting materials.
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Submitted 15 February, 2018;
originally announced February 2018.
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Enhancing superconducting critical current by randomness
Authors:
Y. L. Wang,
L. R. Thoutam,
Z. L. Xiao,
B. Shen,
J. E. Pearson,
R. Divan,
L. E. Ocola,
G. W. Crabtree,
W. K. Kwok
Abstract:
The key ingredient of high critical currents in a type-II superconductor is defect sites that 'pin' vortices. Contrary to earlier understanding on nano-patterned artificial pinning, here we show unequivocally the advantages of a random pinscape over an ordered array in a wide magnetic field range. We reveal that the better performance of a random pinscape is due to the variation of its local-densi…
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The key ingredient of high critical currents in a type-II superconductor is defect sites that 'pin' vortices. Contrary to earlier understanding on nano-patterned artificial pinning, here we show unequivocally the advantages of a random pinscape over an ordered array in a wide magnetic field range. We reveal that the better performance of a random pinscape is due to the variation of its local-density-of-pinning-sites (LDOPS), which mitigates the motion of vortices. This is confirmed by achieving even higher enhancement of the critical current through a conformally mapped random pinscape, where the distribution of the LDOPS is further enlarged. The demonstrated key role of LDOPS in enhancing superconducting critical currents gets at the heart of random versus commensurate pinning. Our findings highlight the importance of random pinscapes in enhancing the superconducting critical currents of applied superconductors.
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Submitted 16 December, 2015;
originally announced December 2015.
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Origin of the turn-on temperature behavior in WTe$_2$
Authors:
Y. L. Wang,
L. R. Thoutam,
Z. L. Xiao,
J. Hu,
S. Das,
Z. Q. Mao,
J. Wei,
R. Divan,
A. Luican-Mayer,
G. W. Crabtree,
W. K. Kwok
Abstract:
A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative 'turn-on' temperature behavior: when the applied magnetic field $H$ is above certain value, the resistivity versus temperature $ρ(T)$ curve shows a minimum at a field dependent temperature $T^*$, which has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic s…
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A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative 'turn-on' temperature behavior: when the applied magnetic field $H$ is above certain value, the resistivity versus temperature $ρ(T)$ curve shows a minimum at a field dependent temperature $T^*$, which has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic structure change. Here, we demonstrate that $ρ(T)$ curves with turn-on behavior in the newly discovered XMR material WTe$_2$ can be scaled as MR $\sim(H/ρ_0)^m$ with $m\approx 2$ and $ρ_0$ being the resistivity at zero-field. We obtained experimentally and also derived from the observed scaling the magnetic field dependence of the turn-on temperature $T^* \sim (H-H_c)^ν$ with $ν\approx 1/2$, which was earlier used as evidence for a predicted metal-insulator transition. The scaling also leads to a simple quantitative expression for the resistivity $ρ^* \approx 2 ρ_0$ at the onset of the XMR behavior, which fits the data remarkably well. These results exclude the possible existence of a magnetic-field-driven metal-insulator transition or significant contribution of an electronic structure change to the low-temperature XMR in WTe$_2$. This work resolves the origin of the turn-on behavior observed in several XMR materials and also provides a general route for a quantitative understanding of the temperature dependence of MR in both XMR and non-XMR materials.
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Submitted 4 November, 2015; v1 submitted 23 October, 2015;
originally announced October 2015.
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Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$
Authors:
L. R. Thoutam,
Y. L. Wang,
Z. L. Xiao,
S. Das,
A. Luican-Mayer,
R. Divan,
G. W. Crabtree,
W. K. Kwok
Abstract:
Extremely large magnetoresistance (XMR) was recently discovered in WTe$_2$, triggering extensive research on this material regarding the XMR origin. Since WTe$_2$ is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe$_2$: (1) WTe$_2$ is e…
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Extremely large magnetoresistance (XMR) was recently discovered in WTe$_2$, triggering extensive research on this material regarding the XMR origin. Since WTe$_2$ is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe$_2$: (1) WTe$_2$ is electronically 3D with a mass anisotropy as low as $2$, as revealed by the 3D scaling behavior of the resistance $R(H,θ)=R(\varepsilon_θH)$ with $\varepsilon_θ=(\cos^2 θ+ γ^{-2}\sin^2 θ)^{1/2}$, $θ$ being the magnetic field angle with respect to c-axis of the crystal and $γ$ being the mass anisotropy; (2) the mass anisotropy $γ$ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe$_2$, including the origin of the remarkable 'turn-on' behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.
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Submitted 22 July, 2015; v1 submitted 6 June, 2015;
originally announced June 2015.
