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Diamond Surface Functionalization via Visible Light-Driven C-H Activation for Nanoscale Quantum Sensing
Authors:
Lila V. H. Rodgers,
Suong T. Nguyen,
James H. Cox,
Kalliope Zervas,
Zhiyang Yuan,
Sorawis Sangtawesin,
Alastair Stacey,
Cherno Jaye,
Conan Weiland,
Anton Pershin,
Adam Gali,
Lars Thomsen,
Simon A. Meynell,
Lillian B. Hughes,
Ania C. Bleszynski Jayich,
Xin Gui,
Robert J. Cava,
Robert R. Knowles,
Nathalie P. de Leon
Abstract:
Nitrogen-vacancy centers in diamond are a promising platform for nanoscale nuclear magnetic resonance sensing. Despite significant progress towards using NV centers to detect and localize nuclear spins down to the single spin level, NV-based spectroscopy of individual, intact, arbitrary target molecules remains elusive. NV molecular sensing requires that target molecules are immobilized within a f…
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Nitrogen-vacancy centers in diamond are a promising platform for nanoscale nuclear magnetic resonance sensing. Despite significant progress towards using NV centers to detect and localize nuclear spins down to the single spin level, NV-based spectroscopy of individual, intact, arbitrary target molecules remains elusive. NV molecular sensing requires that target molecules are immobilized within a few nanometers of NV centers with long spin coherence time. The inert nature of diamond typically requires harsh functionalization techniques such as thermal annealing or plasma processing, limiting the scope of functional groups that can be attached to the surface. Solution-phase chemical methods can be more readily generalized to install diverse functional groups, but they have not been widely explored for single-crystal diamond surfaces. Moreover, realizing shallow NV centers with long spin coherence times requires highly ordered single-crystal surfaces, and solution-phase functionalization has not yet been shown to be compatible with such demanding conditions. In this work, we report a versatile strategy to directly functionalize C-H bonds on single-crystal diamond surfaces under ambient conditions using visible light. This functionalization method is compatible with charge stable NV centers within 10 nm of the surface with spin coherence times comparable to the state of the art. As a proof of principle, we use shallow ensembles of NV centers to detect nuclear spins from functional groups attached to the surface. Our approach to surface functionalization based on visible light-driven C-H bond activation opens the door to deploying NV centers as a broad tool for chemical sensing and single-molecule spectroscopy.
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Submitted 13 September, 2023;
originally announced September 2023.
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One-step Preparation of ZnO Electron Transport Layers Functionalized with Benzoic Acid Derivatives
Authors:
Hao Liu,
Chao Wang,
Wen Liang Tan,
Lars Thomsen,
Anthony S. R. Chesman,
Yvonne Hora,
Martyn Jevric,
Jonas M. Bjuggren,
Mats R. Andersson,
Yahui Tang,
Linjing Tang,
Doan Vu,
Christopher R. McNeill
Abstract:
We present a "one-step" approach to modify ZnO electron transport layers (ETLs) used in organic solar cells. This approach involves adding benzoic acid (BZA) derivatives directly to the ZnO precursor solution, which are then present at the surface of the resulting ZnO film. We demonstrate this approach for three different BZA derivatives, namely benzoic acid, chlorobenzoic acid, and 4-hydrazinoben…
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We present a "one-step" approach to modify ZnO electron transport layers (ETLs) used in organic solar cells. This approach involves adding benzoic acid (BZA) derivatives directly to the ZnO precursor solution, which are then present at the surface of the resulting ZnO film. We demonstrate this approach for three different BZA derivatives, namely benzoic acid, chlorobenzoic acid, and 4-hydrazinobenzoic acid. For all molecules, improved device performance and stability is demonstrated in solar cells using an active layer blend of PTQ10 (donor) and ITIC-Br (non-fullerene acceptor) compared to such cells prepared using untreated ZnO. Furthermore, similar or improved device performance and stability is demonstrated compared to conventional PEIE treatment of ZnO. The presence of the BZA derivatives at the surface after processing is established using X-ray photoelectron spectroscopy and near-edge X-ray absorption fine-structure spectroscopy. From atomic force microscopy analysis and X-ray diffraction studies, the addition of BZA derivatives appears to restrict ZnO grain growth; however, this does not negatively impact device performance. ZnO layers treated with BZA derivatives also exhibit higher water contact angle and lower work function compared to untreated ZnO. This approach enables simplification of device manufacture while still allowing optimization of the surface properties of metal oxide ETLs. Keywords: electron transport layers, zinc oxide, organic solar cells, surface modification
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Submitted 13 July, 2023;
originally announced July 2023.
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Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing
Authors:
C. Ton-That,
L. Zhu,
M. N. Lockrey,
M. R. Phillips,
B. C. C. Cowie,
A. Tadich,
L. Thomsen,
S. Khachadorian,
S. Schlichting,
N. Jankowski,
A. Hoffmann
Abstract:
X-ray absorption near-edge spectroscopy (XANES), photoluminescence, cathodoluminescence and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in multiple states: NO, NZn and loosely bound N2 molecule. The work establishes a direct link between a donor-acceptor pair (DAP) emission at 3.232 eV and the concentra…
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X-ray absorption near-edge spectroscopy (XANES), photoluminescence, cathodoluminescence and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in multiple states: NO, NZn and loosely bound N2 molecule. The work establishes a direct link between a donor-acceptor pair (DAP) emission at 3.232 eV and the concentration of loosely bound N2. These results confirm that N2 at Zn site is a potential candidate for producing a shallow acceptor state in N-doped ZnO as theoretically predicted by Lambrecht and Boonchun [Phys. Rev. B 87, 195207 (2013)]. Additionally, shallow acceptor states arising from NO complexes have been ruled out in this study.
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Submitted 22 June, 2015;
originally announced June 2015.
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Extremely high negative electron affinity of diamond via magnesium adsorption
Authors:
Kane M. O'Donnell,
Mark T. Edmonds,
Anton Tadich,
Lars Thomsen,
Alastair Stacey,
Alex Schenk,
Chris I. Pakes,
Lothar Ley
Abstract:
We report large negative electron affinity (NEA) on diamond (100) using magnesium adsorption on a previously oxygen-terminated surface. The measured NEA is up to $(-2.01\pm0.05)$ eV, the largest reported negative electron affinity to date. Despite the expected close relationship between the surface chemistry of Mg and Li species on oxygen-terminated diamond, we observe differences in the adsorptio…
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We report large negative electron affinity (NEA) on diamond (100) using magnesium adsorption on a previously oxygen-terminated surface. The measured NEA is up to $(-2.01\pm0.05)$ eV, the largest reported negative electron affinity to date. Despite the expected close relationship between the surface chemistry of Mg and Li species on oxygen-terminated diamond, we observe differences in the adsorption properties between the two. Most importantly, a high-temperature annealing step is not required to activate the Mg-adsorbed surface to a state of negative electron affinity. Diamond surfaces prepared by this procedure continue to possess negative electron affinity after exposure to high temperatures, air and even immersion in water.
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Submitted 20 June, 2015; v1 submitted 24 May, 2015;
originally announced May 2015.
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Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(001)
Authors:
Kane M. O'Donnell,
Oliver Warschkow,
Asif Suleman,
Adam Fahy,
Lars Thomsen,
Steven R. Schofield
Abstract:
We investigate the chemical and structural configuration of acetophenone on Si(001) using synchrotron radiation core-level spectroscopy techniques and density functional theory calculations. Samples were prepared by vapour phase dosing of clean Si(001) surfaces with acetophenone in ultrahigh vacuum. Near edge X-ray adsorption fine structure spectroscopy and photoelectron spectroscopy measurements…
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We investigate the chemical and structural configuration of acetophenone on Si(001) using synchrotron radiation core-level spectroscopy techniques and density functional theory calculations. Samples were prepared by vapour phase dosing of clean Si(001) surfaces with acetophenone in ultrahigh vacuum. Near edge X-ray adsorption fine structure spectroscopy and photoelectron spectroscopy measurements were made at room temperature as a function of coverage density and post-deposition anneal temperature. We show that the dominant room temperature adsorption structure lies flat on the substrate, while moderate thermal annealing induces the breaking of Si-C bonds between the phenyl ring and the surface resulting in the reorientation of the adsorbate into an upright configuration.
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Submitted 3 July, 2014;
originally announced July 2014.
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Spin squeezing via quantum feedback
Authors:
L. K. Thomsen,
S. Mancini,
H. M. Wiseman
Abstract:
We propose a quantum feedback scheme for producing deterministically reproducible spin squeezing. The results of a continuous nondemolition atom number measurement are fed back to control the quantum state of the sample. For large samples and strong cavity coupling, the squeezing parameter minimum scales inversely with atom number, approaching the Heisenberg limit. Furthermore, ceasing the measu…
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We propose a quantum feedback scheme for producing deterministically reproducible spin squeezing. The results of a continuous nondemolition atom number measurement are fed back to control the quantum state of the sample. For large samples and strong cavity coupling, the squeezing parameter minimum scales inversely with atom number, approaching the Heisenberg limit. Furthermore, ceasing the measurement and feedback when this minimum has been reached will leave the sample in the maximally squeezed spin state.
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Submitted 17 June, 2002; v1 submitted 5 February, 2002;
originally announced February 2002.
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Atom laser coherence and its control via feedback
Authors:
L. K. Thomsen,
H. M. Wiseman
Abstract:
We present a quantum-mechanical treatment of the coherence properties of a single-mode atom laser. Specifically, we focus on the quantum phase noise of the atomic field as expressed by the first-order coherence function, for which we derive analytical expressions in various regimes. The decay of this function is characterized by the coherence time, or its reciprocal, the linewidth. A crucial con…
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We present a quantum-mechanical treatment of the coherence properties of a single-mode atom laser. Specifically, we focus on the quantum phase noise of the atomic field as expressed by the first-order coherence function, for which we derive analytical expressions in various regimes. The decay of this function is characterized by the coherence time, or its reciprocal, the linewidth. A crucial contributor to the linewidth is the collisional interaction of the atoms. We find four distinct regimes for the linewidth with increasing interaction strength. These range from the standard laser linewidth, through quadratic and linear regimes, to another constant regime due to quantum revivals of the coherence function. The laser output is only coherent (Bose degenerate) up to the linear regime. However, we show that application of a quantum nondemolition measurement and feedback scheme will increase, by many orders of magnitude, the range of interaction strengths for which it remains coherent.
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Submitted 17 June, 2002; v1 submitted 5 February, 2002;
originally announced February 2002.
