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Steric Engineering of Exciton Fine Structure in 2D Perovskites
Authors:
Mateusz Dyksik,
Michal Baranowski,
Joshua J. P. Thompson,
Zhuo Yang,
Martha Rivera Medina,
Maria Antonietta Loi,
Ermin Malic,
Paulina Plochocka
Abstract:
A comprehensive study of excitonic properties of 2D layered perovskites is provided, with an emphasis on understanding and controlling the exciton fine structure. First, an overview of the optical properties is presented, discussing the challenges in determining the bandgap and exciton binding energies. Through magneto-optical spectroscopic measurements (up to B = 140 T), scaling laws are establis…
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A comprehensive study of excitonic properties of 2D layered perovskites is provided, with an emphasis on understanding and controlling the exciton fine structure. First, an overview of the optical properties is presented, discussing the challenges in determining the bandgap and exciton binding energies. Through magneto-optical spectroscopic measurements (up to B = 140 T), scaling laws are established for exciton binding energy as a function of the band gap and the diamagnetic coefficient. Using an in-plane magnetic field, the exciton fine structure for various 2D perovskites is examined to measure the energy splitting between the excitonic levels. The exciton fine structure and exchange interaction are correlated with structural parameters, employing an effective mass model, to highlight the role of steric effect on the exchange interaction. These findings reveal that lattice distortions, introduced by organic spacers, significantly influence the exchange interaction, driving a tunable energy spacing between dark and bright excitons. This unique feature of 2D perovskites, not present in other semiconductors, offers a novel tuning mechanism for exciton control, making these materials highly promising for efficient light emitters and advanced quantum technologies.
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Submitted 18 March, 2025;
originally announced March 2025.
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Topologically-enhanced exciton transport
Authors:
Joshua J. P. Thompson,
Wojciech J. Jankowski,
Robert-Jan Slager,
Bartomeu Monserrat
Abstract:
Excitons dominate the optoelectronic response of many materials. Depending on the time scale and host material, excitons can exhibit free diffusion, phonon-limited diffusion, or polaronic diffusion, and exciton transport often limits the efficiency of optoelectronic devices such as solar cells or photodetectors. We demonstrate that topological excitons exhibit enhanced diffusion in all transport r…
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Excitons dominate the optoelectronic response of many materials. Depending on the time scale and host material, excitons can exhibit free diffusion, phonon-limited diffusion, or polaronic diffusion, and exciton transport often limits the efficiency of optoelectronic devices such as solar cells or photodetectors. We demonstrate that topological excitons exhibit enhanced diffusion in all transport regimes. Using quantum geometry, we find that topological excitons are generically larger and more dispersive than their trivial counterparts, promoting their diffusion. We apply this general theory to organic polyacene semiconductors and show that exciton transport increases up to fourfold when topological excitons are present. We also propose that non-uniform electric fields can be used to directly probe the quantum metric of excitons, providing a rare experimental window into a basic geometric feature of quantum states. Our results provide a new strategy to enhance exciton transport in semiconductors and reveal that mathematical ideas of topology and quantum geometry can be important ingredients in the design of next-generation optoelectronic technologies.
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Submitted 8 May, 2025; v1 submitted 1 October, 2024;
originally announced October 2024.
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Circularly polarised electroluminescence from chiral excitons in vacuum-sublimed supramolecular semiconductor thin films
Authors:
Rituparno Chowdhury,
Marco D. Preuss,
Hwan-Hee Cho,
Joshua J. P. Thompson,
Samarpita Sen,
Tomi Baikie,
Pratyush Ghosh,
Yorrick Boeije,
Xian-Wei Chua,
Kai-Wei Chang,
Erjuan Guo,
Joost van der Tol,
Bart W. L. van den Bersselaar,
Andrea Taddeucci,
Nicolas Daub,
Daphne M. Dekker,
Scott T. Keene,
Ghislaine Vantomme,
Bruno Ehrler,
Stefan C. J. Meskers,
Akshay Rao,
Bartomeu Monserrat,
E. W. Meijer,
Richard H. Friend
Abstract:
Materials with chiral electronic structures are of great interest. We report a triazatruxene, TAT, molecular semiconductor with chiral alkyl side chains that crystallises from solution to form chirally-stacked columns with a helical pitch of 6 TATs (2.3 nm). These crystals show strong circularly polarised, CP, green photoluminescence, with dissymmetry of 24%. Electronic structure calculations usin…
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Materials with chiral electronic structures are of great interest. We report a triazatruxene, TAT, molecular semiconductor with chiral alkyl side chains that crystallises from solution to form chirally-stacked columns with a helical pitch of 6 TATs (2.3 nm). These crystals show strong circularly polarised, CP, green photoluminescence, with dissymmetry of 24%. Electronic structure calculations using the full crystal structure, show that this chiral stacking associates angular momentum to the valence and conduction states and thus gives rise to the observed CP luminescence. Free-standing crystals are not useful for active semiconductor devices, but we have discovered that co-sublimation of TAT as the guest in a structurally mismatched host enables the fabrication of thin films where the chiral crystallization is achieved in-situ by thermally-triggered nano-phase segregation of dopant and host whilst preserving the integrity of the film. This enables fabrication of bright (green) organic light-emitting diodes with unexpectedly high external quantum efficiencies of up to 16% and electroluminescence dissymmetries above 10%. These materials and this process method offer significant application potential in spintronics, optical displays and multidimensional optoelectronics.
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Submitted 25 August, 2024;
originally announced August 2024.
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Excitonic topology and quantum geometry in organic semiconductors
Authors:
Wojciech J. Jankowski,
Joshua J. P. Thompson,
Bartomeu Monserrat,
Robert-Jan Slager
Abstract:
Excitons drive the optoelectronic properties of organic semiconductors which underpin devices including solar cells and light-emitting diodes. Here we show that excitons can exhibit topologically non-trivial states protected by inversion symmetry and identify a family of organic semiconductors realising the predicted excitonic topological phases. We also demonstrate that the topological phase can…
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Excitons drive the optoelectronic properties of organic semiconductors which underpin devices including solar cells and light-emitting diodes. Here we show that excitons can exhibit topologically non-trivial states protected by inversion symmetry and identify a family of organic semiconductors realising the predicted excitonic topological phases. We also demonstrate that the topological phase can be controlled through experimentally realisable strains and chemical functionalisation of the material. Appealing to quantum Riemannian geometry, we predict that topologically non-trivial excitons have a lower bound on their centre-of-mass spatial spread, which can significantly exceed the size of a unit cell. Furthermore, we show that the dielectric environment allows control over the excitonic quantum geometry. The discovery of excitonic topology and excitonic Riemannian geometry in organic materials brings together two mature fields and suggests many new possibilities for a range of future optoelectronic applications.
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Submitted 20 May, 2025; v1 submitted 17 June, 2024;
originally announced June 2024.
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Square Moiré Superlattices in Twisted Two-Dimensional Halide Perovskites
Authors:
Shuchen Zhang,
Linrui Jin,
Yuan Lu,
Linghai Zhang,
Jiaqi Yang,
Qiuchen Zhao,
Dewei Sun,
Joshua J. P. Thompson,
Biao Yuan,
Ke Ma,
Akriti,
Jee Yung Park,
Yoon Ho Lee,
Zitang Wei,
Blake P. Finkenauer,
Daria D. Blach,
Sarath Kumar,
Hailin Peng,
Arun Mannodi-Kanakkithodi,
Yi Yu,
Ermin Malic,
Gang Lu,
Letian Dou,
Libai Huang
Abstract:
Moiré superlattices have emerged as a new platform for studying strongly correlated quantum phenomena, but these systems have been largely limited to van der Waals layer two-dimensional (2D) materials. Here we introduce moiré superlattices leveraging ultra-thin, ligand-free halide perovskites, facilitated by ionic interactions. Square moiré superlattices with varying periodic lengths are clearly v…
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Moiré superlattices have emerged as a new platform for studying strongly correlated quantum phenomena, but these systems have been largely limited to van der Waals layer two-dimensional (2D) materials. Here we introduce moiré superlattices leveraging ultra-thin, ligand-free halide perovskites, facilitated by ionic interactions. Square moiré superlattices with varying periodic lengths are clearly visualized through high-resolution transmission electron microscopy. Twist-angle-dependent transient photoluminescence microscopy and electrical characterizations indicate the emergence of localized bright excitons and trapped charge carriers near a twist angle of ~10°. The localized excitons are accompanied by enhanced exciton emission, attributed to an increased oscillator strength by a theoretically forecasted flat band. This work illustrates the potential of extended ionic interaction in realizing moiré physics at room temperature, broadening the horizon for future investigations.
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Submitted 27 December, 2023;
originally announced December 2023.
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Phonon-bottleneck enhanced exciton emission in 2D perovskites
Authors:
Joshua J. P. Thompson,
Mateusz Dyksik,
Paulina Peksa,
Katarzyna Posmyk,
Ambjörn Joki,
Raul Perea-Causin,
Paul Erhart,
Michał Baranowski,
Maria Antonietta Loi,
Paulina Plochocka,
Ermin Malic
Abstract:
Layered halide perovskites exhibit remarkable optoelectronic properties and technological promise, driven by strongly bound excitons. The interplay of spin-orbit and exchange coupling creates a rich excitonic landscape, determining their optical signatures and exciton dynamics. Despite the dark excitonic ground state, surprisingly efficient emission from higher-energy bright states has puzzled the…
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Layered halide perovskites exhibit remarkable optoelectronic properties and technological promise, driven by strongly bound excitons. The interplay of spin-orbit and exchange coupling creates a rich excitonic landscape, determining their optical signatures and exciton dynamics. Despite the dark excitonic ground state, surprisingly efficient emission from higher-energy bright states has puzzled the scientific community, sparking debates on relaxation mechanisms. Combining low-temperature magneto-optical measurements with sophisticated many-particle theory, we elucidate the origin of the bright exciton emission in perovskites by tracking the thermalization of dark and bright excitons under a magnetic field. We clearly attribute the unexpectedly high emission to a pronounced phonon-bottleneck effect, considerably slowing down the relaxation towards the energetically lowest dark states. We demonstrate that this bottleneck can be tuned by manipulating the bright-dark energy splitting and optical phonon energies, offering valuable insights and strategies for controlling exciton emission in layered perovskite materials that is crucial for optoelectronics applications.
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Submitted 17 December, 2023;
originally announced December 2023.
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Optical Signatures of Förster-induced energy transfer in organic/TMD heterostructures
Authors:
Joshua J. P. Thompson,
Marina Gerhard,
Gregor Witte,
Ermin Malic
Abstract:
Hybrid van der Waals heterostructures of organic semiconductors and transition metal dichalcogenides (TMDs) are promising candidates for various optoelectronic devices, such as solar cells and biosensors. Energy-transfer processes in these materials are crucial for the efficiency of such devices, yet they are poorly understood. In this work, we develop a fully microscopic theory describing the eff…
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Hybrid van der Waals heterostructures of organic semiconductors and transition metal dichalcogenides (TMDs) are promising candidates for various optoelectronic devices, such as solar cells and biosensors. Energy-transfer processes in these materials are crucial for the efficiency of such devices, yet they are poorly understood. In this work, we develop a fully microscopic theory describing the effect of the Förster interaction on exciton dynamics and optics in a WSe$_2$/tetracene heterostack. We demonstrate that the differential absorption and time-resolved photoluminescence can be used to track the real-time evolution of excitons. We predict a strongly unidirectional energy transfer from the organic to the TMD layer. Furthermore, we explore the role temperature has in activating the Förster transfer and find a good agreement to previous experiments. Our results provide a blueprint to tune the light-harvesting efficiency through temperature, molecular orientation and interlayer separation in TMD/organic heterostructures.
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Submitted 4 May, 2023;
originally announced May 2023.
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Exciton optics, dynamics and transport in atomically thin semiconductors
Authors:
Raul Perea-Causin,
Daniel Erkensten,
Jamie M. Fitzgerald,
Joshua J. P. Thompson,
Roberto Rosati,
Samuel Brem,
Ermin Malic
Abstract:
Atomically thin semiconductors such as transition metal dichalcogenide (TMD) monolayers exhibit a very strong Coulomb interaction, giving rise to a rich exciton landscape. This makes these materials highly attractive for efficient and tunable optoelectronic devices. In this article, we review the recent progress in the understanding of exciton optics, dynamics and transport, which crucially govern…
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Atomically thin semiconductors such as transition metal dichalcogenide (TMD) monolayers exhibit a very strong Coulomb interaction, giving rise to a rich exciton landscape. This makes these materials highly attractive for efficient and tunable optoelectronic devices. In this article, we review the recent progress in the understanding of exciton optics, dynamics and transport, which crucially govern the operation of TMD-based devices. We highlight the impact of hBN-encapsulation, which reveals a plethora of many-particle states in optical spectra, and we outline the most novel breakthroughs in the field of exciton-polaritonics. Moreover, we underline the direct observation of exciton formation and thermalization in TMD monolayers and heterostructures in recent time-resolved ARPES studies. We also show the impact of exciton density, strain and dielectric environment on exciton diffusion and funneling. Finally, we put forward relevant research directions in the field of atomically thin semiconductors for the near future.
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Submitted 20 September, 2022;
originally announced September 2022.
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Singlet exciton optics and phonon-mediated dynamics in oligoacene semiconductor crystals
Authors:
Joshua J. P. Thompson,
Dominik Muth,
Sebastian Anhäuser,
Daniel Bischof,
Marina Gerhard,
Gregor Witte,
Ermin Malic
Abstract:
Organic semiconductor crystals stand out as an efficient, cheap and diverse platform for realising optoelectronic applications. The optical response of these crystals is governed by a rich tapestry of exciton physics. So far, little is known on the phonon-driven singlet exciton dynamics in this class of materials. In this joint theory-experiment work, we combine the fabrication of a high-quality o…
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Organic semiconductor crystals stand out as an efficient, cheap and diverse platform for realising optoelectronic applications. The optical response of these crystals is governed by a rich tapestry of exciton physics. So far, little is known on the phonon-driven singlet exciton dynamics in this class of materials. In this joint theory-experiment work, we combine the fabrication of a high-quality oligoacene semiconductor crystal and characterization via photoluminescence measurements with a sophisticated approach to the microscopic modeling in these crystals. This allows us to investigate singlet exciton optics and dynamics. We predict phonon-bottleneck effects in pentacene crystals, where we find dark excitons acting as crucial phonon-mediated relaxation scattering channels. While the efficient singlet fission in pentacene crystals hampers the experimental observation of this bottleneck effect, we reveal both in theory and experiment a distinct polarisation- and temperature-dependence in absorption and photoluminescence spectra of tetracene crystals, including microscopic origin of exciton linewidths, the activation of the higher Davydov states at large temperatures, and polarisation-dependent quenching of specific exciton resonances. Our joint theory-experiment study represents a significant advance in microscopic understanding of singlet exciton optics and dynamics in oligoacene crystals.
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Submitted 12 September, 2022;
originally announced September 2022.
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Twist Angle Tuning of Moiré Exciton Polaritons in van der Waals Heterostructures
Authors:
Jamie M. Fitzgerald,
Joshua J. P. Thompson,
Ermin Malic
Abstract:
Twisted atomically thin semiconductors are characterized by moiré excitons. Their optical signatures and selection rules are well understood. However, their hybridization with photons in the strong coupling regime for heterostructures integrated in an optical cavity has not been in the focus of research yet. Here, we combine an excitonic density matrix formalism with a Hopfield approach to provide…
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Twisted atomically thin semiconductors are characterized by moiré excitons. Their optical signatures and selection rules are well understood. However, their hybridization with photons in the strong coupling regime for heterostructures integrated in an optical cavity has not been in the focus of research yet. Here, we combine an excitonic density matrix formalism with a Hopfield approach to provide microscopic insights into moiré exciton polaritons. In particular, we show that exciton-light coupling, polariton energy, and even the number of polariton branches can be controlled via the twist angle. We find that these new hybrid light-exciton states become delocalized relative to the constituent excitons due to the mixing with light and higher-energy excitons. The system can be interpreted as a natural quantum metamaterial with a periodicity that can be engineered via the twist angle. Our study presents a significant advance in microscopic understanding and control of moiré exciton polaritons in twisted atomically thin semiconductors.
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Submitted 20 January, 2022;
originally announced January 2022.
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Interlayer exciton landscape in WS$_2$/tetracene heterostructures
Authors:
Joshua J. P. Thompson,
Victoria Lumsargis,
Maja Feierabend,
Quichen Zhao,
Kang Wang,
Letian Dou,
Libai Huang,
Ermin Malic
Abstract:
The vertical stacking of two-dimensional materials into heterostructures gives rise to a plethora of intriguing optoelectronic properties and presents an unprecedented potential for technological development. While much progress has been made combining different monolayers of transition metal dichalgonenides (TMDs), little is known about TMD-based heterostructures including organic layers of molec…
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The vertical stacking of two-dimensional materials into heterostructures gives rise to a plethora of intriguing optoelectronic properties and presents an unprecedented potential for technological development. While much progress has been made combining different monolayers of transition metal dichalgonenides (TMDs), little is known about TMD-based heterostructures including organic layers of molecules. Here, we present a joint theory-experiment study on a TMD/tetracene heterostructure demonstrating clear signatures of spatially separated interlayer excitons in low temperature photoluminescence spectra. Here, the Coulomb-bound electrons and holes are localized either in the TMD or in the molecule layer, respectively. In particular, we reveal both in theory and experiment signatures of the entire intra- and interlayer exciton landscape in the photoluminescence spectra. In particular, we find both in theory and experiment a pronounced transfer of intensity from the intralayer TMD exciton to a series of energetically lower interlayer excitons with decreasing temperature. In addition, we find signatures phonon-sidebands stemming from these interlayer exciton states. Our findings shed light on the microscopic nature of interlayer excitons in TMD/molecule heterostructures and could have important implications for technological applications of these materials.
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Submitted 24 June, 2022; v1 submitted 24 November, 2021;
originally announced November 2021.
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Valley-exchange coupling probed by angle-resolved photoluminescence
Authors:
Joshua J. P Thompson,
Samuel Brem,
Hanlin Fang,
Carlos Antón-Solanas,
Bo Han,
Hangyong Shan,
Saroj P. Dash,
Witlef Wieczorek,
Christian Schneider,
Ermin Malic
Abstract:
The optical properties of monolayer transition metal dichalcogenides are dominated by tightly-bound excitons. They form at distinct valleys in reciprocal space, and can interact via the valley-exchange coupling, modifying their dispersion considerably. Here, we predict that angle-resolved photoluminescence can be used to probe the changes of the excitonic dispersion. The exchange-coupling leads to…
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The optical properties of monolayer transition metal dichalcogenides are dominated by tightly-bound excitons. They form at distinct valleys in reciprocal space, and can interact via the valley-exchange coupling, modifying their dispersion considerably. Here, we predict that angle-resolved photoluminescence can be used to probe the changes of the excitonic dispersion. The exchange-coupling leads to a unique angle dependence of the emission intensity for both circularly and linearly-polarised light. We show that these emission characteristics can be strongly tuned by an external magnetic field due to the valley-specific Zeeman-shift. We propose that angle-dependent photoluminescence measurements involving both circular and linear optical polarisation as well as magnetic fields should act as strong verification of the role of valley-exchange coupling on excitonic dispersionand its signatures in optical spectra
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Submitted 19 November, 2021;
originally announced November 2021.
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Criteria for deterministic single-photon emission in two-dimensional atomic crystals
Authors:
Joshua J. P. Thompson,
Samuel Brem,
Hanlin Fang,
Joey Frey,
Saroj P. Dash,
Witlef Wieczorek,
Ermin Malic
Abstract:
The deterministic production of single-photons from two dimensional materials promises to usher in a new generation of photonic quantum devices. In this work, we outline criteria by which single-photon emission can be realised in two dimensional materials: spatial isolation, spectral filtering and low excitation of quantum emitters. We explore how these criteria can be fulfilled in atomically thin…
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The deterministic production of single-photons from two dimensional materials promises to usher in a new generation of photonic quantum devices. In this work, we outline criteria by which single-photon emission can be realised in two dimensional materials: spatial isolation, spectral filtering and low excitation of quantum emitters. We explore how these criteria can be fulfilled in atomically thin transition metal dichalcogenides, where excitonic physics dictates the observed photoemission. In particular, we model the effect of defects and localised strain, in accordance with the most common experimental realisations, on the photon statistics of emitted light. Moreover, we demonstrate that an optical cavity has a negative impact on the photon statistics, suppressing the single-photon character of the emission by diminishing the effect of spectral filtering on the emitted light. Our work provides a theoretical framework revealing criteria necessary to facilitate single-photon emission in two-dimensional materials and thus can guide future experimental studies in this field.
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Submitted 24 August, 2020;
originally announced August 2020.
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Integration of multi-layer black phosphorus into photoconductive antennas for THz emission
Authors:
M. H. Doha,
J. I. Santos Batista,
A. F. Rawwagah,
J. P. Thompson,
A. Fereidouni,
K. Watanabe,
T. Taniguchi,
M. El-Shenawee,
H. O. H. Churchill
Abstract:
We report the fabrication, characterization, and modeling of photoconductive antennas using 40 nm thin-film flakes of black phosphorus (BP) as the photoconductor and hexagonal boron nitride (hBN) as a capping layer to prevent oxidation of BP. Dipole antennas were fabricated on oxidized high-resistivity Si substrates, and BP and hBN flakes were picked up and transferred onto the antenna inside a ni…
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We report the fabrication, characterization, and modeling of photoconductive antennas using 40 nm thin-film flakes of black phosphorus (BP) as the photoconductor and hexagonal boron nitride (hBN) as a capping layer to prevent oxidation of BP. Dipole antennas were fabricated on oxidized high-resistivity Si substrates, and BP and hBN flakes were picked up and transferred onto the antenna inside a nitrogen glovebox. The transfer matrix technique was used to optimize the thickness of BP and hBN for maximum absorption. BP flakes were aligned with the armchair axis along the anode-cathode gap of the antenna, with crystal orientation measured using reflection anisotropy. Photocurrent imaging under illumination with 100 fs pulses at 780 and 1560 nm showed a bias-dependent maximum photocurrent localized to the antenna gap with a peak photoconductivity of 1 (2) S/cm in the linear regime of bias for excitation at 780 (1560) nm. Photocurrent saturation in bias (pump fluence) occurred at approximately 1 V (0.25 mJ/cm$^2$). Device performance was modeled numerically by solving Maxwell's equations and the drift-diffusion equation to obtain the photocurrent density in response to pulsed laser excitation, which was largely in qualitative agreement with the experimental observations. THz output computed from surface current density suggests that BP THz PCA performance is at least comparable to more traditional devices based on low-temperature-grown GaAs. These devices represent a step toward high-performance THz photoconductive antennas using BP.
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Submitted 24 July, 2020;
originally announced July 2020.
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Tuning supercurrent in Josephson field effect transistors using h-BN dielectric
Authors:
Fatemeh Barati,
Josh P. Thompson,
Matthieu C. Dartiailh,
Kasra Sardashti,
William Mayer,
Joseph Yuan,
Kaushini Wickramasinghe,
K. Watanabe,
T. Taniguchi,
Hugh Churchill,
Javad Shabani
Abstract:
The transparent interface in epitaxial Al-InAs heterostructures provides an excellent platform for potential advances in mesoscopic and topological superconductivity. Semiconductor-based Josephson Junction Field Effect Transistors (JJ-FETs) fabricated on these heterostructures have a metallic gate that tunes the supercurrent. Here we report the fabrication and measurement of gate-tunable Al-InAs J…
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The transparent interface in epitaxial Al-InAs heterostructures provides an excellent platform for potential advances in mesoscopic and topological superconductivity. Semiconductor-based Josephson Junction Field Effect Transistors (JJ-FETs) fabricated on these heterostructures have a metallic gate that tunes the supercurrent. Here we report the fabrication and measurement of gate-tunable Al-InAs JJ-FETs in which the gate dielectric in contact with the InAs is produced by mechanically exfoliated hexagonal boron nitride (h-BN) followed by dry transfer using a van der Waals-mediated pick up process. We discuss the fabrication process that enables compatibility between layered material transfer and Al-InAs heterostructures to avoid chemical reactions and unintentional doping that could affect the characteristics of the JJ-FET. We achieve full gate-tunablity of supercurrent by using only 5~nm thick h-BN flakes. We contrast our process with devices fabricated using a conventional AlO$_{\rm x}$ gate dielectric and show that h-BN could be an excellent competing dielectric for JJ-FET devices. We observe that the product of normal resistance and critical current, I$_{\rm c}$R$_{\rm n}$, is comparable for both types of devices, but strikingly higher R$_{\rm n}$ for the h-BN-based devices indicating that the surface is doped less compared to AlO$_{\rm x}$ gate dielectric.
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Submitted 27 January, 2021; v1 submitted 23 July, 2020;
originally announced July 2020.
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Determination of interatomic coupling between two-dimensional crystals using angle-resolved photoemission spectroscopy
Authors:
J. J. P. Thompson,
D. Pei,
H. Peng,
H. Wang,
N. Channa,
H. L. Peng,
A. Barinov,
N. B. M. Schröter,
Y. Chen,
M. Mucha-Kruczyński
Abstract:
Lack of directional bonding between two-dimensional crystals like graphene or monolayer transition metal dichalcogenides provides unusual freedom in selection of components for vertical van der Waals heterostructures. However, even for identical layers, their stacking, in particular the relative angle between their crystallographic directions, modifies properties of the structure. We demonstrate t…
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Lack of directional bonding between two-dimensional crystals like graphene or monolayer transition metal dichalcogenides provides unusual freedom in selection of components for vertical van der Waals heterostructures. However, even for identical layers, their stacking, in particular the relative angle between their crystallographic directions, modifies properties of the structure. We demonstrate that the interatomic coupling between two two-dimensional crystals can be determined from angle-resolved photoemission spectra of a trilayer structure with one aligned and one twisted interface. Each of the interfaces provides complementary information and together they enable self-consistent determination of the coupling. We parametrize interatomic coupling for carbon atoms by studying twisted trilayer graphene and show that the result can be applied to structures with different twists and number of layers. Our approach demonstrates how to extract fundamental information about interlayer coupling in a stack of two-dimensional crystals and can be applied to many other van der Waals interfaces.
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Submitted 17 July, 2020;
originally announced July 2020.
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Electronic Raman Scattering in Twistronic Few-Layer Graphene
Authors:
A. Garcia-Ruiz,
J. J. P. Thompson,
M. Mucha-Kruczynski,
V. I. Fal'ko
Abstract:
We study electronic contribution to the Raman scattering signals of two-, three- and four-layer graphene with layers at one of the interfaces twisted by a small angle with respect to each other. We find that the Raman spectra of these systems feature two peaks produced by van Hove singularities in moiré minibands of twistronic graphene, one related to direct hybridization of Dirac states, and the…
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We study electronic contribution to the Raman scattering signals of two-, three- and four-layer graphene with layers at one of the interfaces twisted by a small angle with respect to each other. We find that the Raman spectra of these systems feature two peaks produced by van Hove singularities in moiré minibands of twistronic graphene, one related to direct hybridization of Dirac states, and the other resulting from band folding caused by moiré superlattice. The positions of both peaks strongly depend on the twist angle, so that their detection can be used for non-invasive characterization of the twist, even in hBN-encapsulated structures.
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Submitted 5 October, 2020; v1 submitted 21 May, 2020;
originally announced May 2020.
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A Lower Bound on the Partition Function for a Strictly Neutral Charge-Symmetric System
Authors:
Jeffrey P. Thompson,
Isaac C. Sanchez
Abstract:
A lower bound on the grand partition function of a classical charge-symmetric system is adapted to the neutral grand canonical ensemble, in which the system is constrained to have zero total charge. This constraint permits us to consider two-body potentials that are only conditionally positive definite.
A lower bound on the grand partition function of a classical charge-symmetric system is adapted to the neutral grand canonical ensemble, in which the system is constrained to have zero total charge. This constraint permits us to consider two-body potentials that are only conditionally positive definite.
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Submitted 24 April, 2019;
originally announced April 2019.
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Valley-polarised tunnelling currents in bilayer graphene tunnelling transistors
Authors:
J. J . P. Thompson,
D. J. Leech,
M. Mucha-Kruczyński
Abstract:
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling barrier width for electrons on different graphene layers of bilayer graphene, coupled with the fact that its Landau level wave functions are not equally distributed…
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We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling barrier width for electrons on different graphene layers of bilayer graphene, coupled with the fact that its Landau level wave functions are not equally distributed amongst the layers with a distribution that is reversed between the two valleys, lead to valley polarisation of the tunnelling current. We estimate that valley polarisation $\sim 70\%$ can be achieved in high quality devices at $B=1$ T. Moreover, we demonstrate that strong valley polarisation can be obtained both in the limit of strong-momentum conserving tunnelling and in lower quality devices where this constraint is lifted.
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Submitted 15 February, 2019; v1 submitted 12 November, 2018;
originally announced November 2018.
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Negative differential resistance in Van der Waals heterostructures due to moiré-induced spectral reconstruction
Authors:
D. J. Leech,
J. J. P. Thompson,
M. Mucha-Kruczyński
Abstract:
Formation of moiré superlattices is common in Van der Waals heterostructures as a result of the mismatch between lattice constants and misalignment of crystallographic directions of the constituent two-dimensional crystals. We discuss theoretically electron transport in a Van der Waals tunnelling transistor in which one of the electrodes is made of two crystals forming a moiré superlattice at thei…
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Formation of moiré superlattices is common in Van der Waals heterostructures as a result of the mismatch between lattice constants and misalignment of crystallographic directions of the constituent two-dimensional crystals. We discuss theoretically electron transport in a Van der Waals tunnelling transistor in which one of the electrodes is made of two crystals forming a moiré superlattice at their interface. By investigating structures containing either the aligned graphene/hexagonal boron nitride heterostructure or twisted bilayer graphene, we show that negative differential resistance is possible in such transistors as a consequence of the superlattice-induced changes in the electronic density of states and without the need of momentum conserving tunnelling present in high-quality exfoliated devices.
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Submitted 8 August, 2018; v1 submitted 22 February, 2018;
originally announced February 2018.
