Showing 1–13 of 13 results for author: Thind, A S

Strong tunability of epitaxial relationship and reconstruction at improper ferroelectric interface

Authors: Xin Li, Yu Yun, Guodong Ren, Arashdeep Singh Thind, Amit Kumar Shah, Rohan Mishra, Xiaoshan Xu

Abstract: The atomic structures at epitaxial film-substrate interfaces determine scalability of thin films and can result in new phenomena. However, it is challenging to control the interfacial structures since they are decided by the most stable atomic bonding. In this work, we report strong tunability of the epitaxial interface of improper ferroelectric hexagonal ferrites deposited on spinel ferrites. The… ▽ More The atomic structures at epitaxial film-substrate interfaces determine scalability of thin films and can result in new phenomena. However, it is challenging to control the interfacial structures since they are decided by the most stable atomic bonding. In this work, we report strong tunability of the epitaxial interface of improper ferroelectric hexagonal ferrites deposited on spinel ferrites. The selection of two interface types, related by a 90 deg rotation of in-plane epitaxial relations and featured by disordered and hybridized reconstructions respectively, can be achieved by growth conditions, stacking sequences, and spinel compositions. While the disordered type suppresses the primary K3 structure distortion and ferroelectricity in hexagonal ferrites, the hybridized type is more coherent with the distortion with minimal suppression. This tunable interfacial structure provides critical insight on controlling interfacial clamping and may offer a solution for the long-standing problem of practical critical thickness in improper ferroelectrics. △ Less

Submitted 8 May, 2025; originally announced May 2025.

Improper flexoelectricity in hexagonal rare-earth ferrites

Authors: Xin Li, Guodong Ren, Yu Yun, Arashdeep Singh Thind, Amit Kumar Shah, Abbey Bowers, Rohan Mishra, Xiaoshan Xu

Abstract: Flexoelectricity is a universal effect that generates electric polarization due to broken inversion symmetry caused by local strain gradient. The large strain gradient at nanoscale makes flexo-electric effects, especially in nanoscopic ferroelectric materials, promising in sensors, actuator, energy harvesting, and memory applications. In this work, we studied flexoelectricity in hexagonal ferrites… ▽ More Flexoelectricity is a universal effect that generates electric polarization due to broken inversion symmetry caused by local strain gradient. The large strain gradient at nanoscale makes flexo-electric effects, especially in nanoscopic ferroelectric materials, promising in sensors, actuator, energy harvesting, and memory applications. In this work, we studied flexoelectricity in hexagonal ferrites h-YbFeO3, an improper ferroelectric expected to have weak piezoelectricity and low sensitivity to depolarization field, which are advantageous for studying flexoelectric effects. We show that in h-YbFeO3 epitaxial thin films, strain gradient on the order of 10^6 m-1 occurs near grain boundaries and edge dislocation, which has a significant impact on the non-polar K3 structural distortion that induces spontaneous polarization. The phenomenological model based on the Landau theory of improper ferroelectricity suggests an indirect flexoelectric effect on the order of 10 nC/m in h-YbFeO3, which is substantially larger than the expectation from Kogan mechanism. These results reveal a novel microscopic mechanism of coupling between strain gradient and polarization mediated by structural distortion, which we call improper flexoelectricity. △ Less

Submitted 28 May, 2025; v1 submitted 25 September, 2024; originally announced September 2024.

Strain Effects in SrHfO$_{3}$ Films Grown by Hybrid Molecular Beam Epitaxy

Authors: Patrick T. Gemperline, Arashdeep S. Thind, Chunli Tang, George E. Sterbinsky, Boris Kiefer, Wencan Jin, Robert F. Klie, Ryan B. Comes

Abstract: Perovskite oxides hetero-structures are host to a large number of interesting phenomena such as ferroelectricity and 2D-superconductivity. Ferroelectric perovskite oxides have been of significant interest due to their possible use in MOSFETs and FRAM. SrHfO$_3$ (SHO) is a perovskite oxide with pseudo-cubic lattice parameter of 4.1 $\mathring{A}$ that previous DFT calculations suggest can be stabil… ▽ More Perovskite oxides hetero-structures are host to a large number of interesting phenomena such as ferroelectricity and 2D-superconductivity. Ferroelectric perovskite oxides have been of significant interest due to their possible use in MOSFETs and FRAM. SrHfO$_3$ (SHO) is a perovskite oxide with pseudo-cubic lattice parameter of 4.1 $\mathring{A}$ that previous DFT calculations suggest can be stabilized in a ferroelectric P4mm phase, similar to STO, when stabilized with sufficient compressive strain. Additionally, it is insulating, possesses a large band gap, and a high dielectric constant, making it an ideal candidate for oxide electronic devices. In this work, SHO films were grown by hybrid molecular beam epitaxy with a tetrakis(ethylmethylamino)hafnium(IV) source on GdScO$_3$ and TbScO$_3$ substrates. Equilibrium and strained SHO phases were characterized using X-ray diffraction, X-ray absorption spectroscopy, and scanning transmission electron microscopy to determine the perovskite phase of the strained films, with the results compared to density functional theory models of phase stability versus strain. Contrary to past reports, we find that compressively-strained SrHfO$_3$ undergoes octahedral tilt distortions and most likely takes on the I4/mcm phase with the a$^0$a$^0$c$^-$ tilt pattern. △ Less

Submitted 19 September, 2024; originally announced September 2024.

Comments: 36 pages, 11 figures

Journal ref: ACS Appl. Electron. Mater. 2025, 7, 3, 983-996

Polarization Pinning at Antiphase Boundaries in Multiferroic YbFeO$_3$

Authors: Guodong Ren, Pravan Omprakash, Xin Li, Yu Yun, Arashdeep S. Thind, Xiaoshan Xu, Rohan Mishra

Abstract: The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain-walls. We report on the pinning of polarization due to antiphase boundaries in thin films of the multiferroic hexagonal YbFeO$_3$. We have directly resolved the atomic structure of a sharp antiphase boundary (APB) in YbFeO$_3$ thin films using a combination of aber… ▽ More The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain-walls. We report on the pinning of polarization due to antiphase boundaries in thin films of the multiferroic hexagonal YbFeO$_3$. We have directly resolved the atomic structure of a sharp antiphase boundary (APB) in YbFeO$_3$ thin films using a combination of aberration-corrected scanning transmission electron microscopy (STEM) and total energy calculations based on density-functional theory (DFT). We find the presence of a layer of FeO$_6$ octahedra at the APB that bridge the adjacent domains. STEM imaging shows a reversal in the direction of polarization on moving across the APB, which DFT calculations confirm is structural in nature as the polarization reversal reduces the distortion of the FeO$_6$ octahedral layer at the APB. Such APBs in hexagonal perovskites are expected to serve as domain-wall pinning sites and hinder ferroelectric switching of the domains. △ Less

Submitted 11 October, 2024; v1 submitted 13 September, 2024; originally announced September 2024.

Comments: 16 pages, 4 figures

Journal ref: Chinese Phys. B 33 118502 (2024)

Coherent Erbium Spin Defects in Colloidal Nanocrystal Hosts

Authors: Joeson Wong, Mykyta Onizhuk, Jonah Nagura, Arashdeep S. Thind, Jasleen K. Bindra, Christina Wicker, Gregory D. Grant, Yuxuan Zhang, Jens Niklas, Oleg G. Poluektov, Robert F. Klie, Jiefei Zhang, Giulia Galli, F. Joseph Heremans, David D. Awschalom, A. Paul Alivisatos

Abstract: We demonstrate nearly a microsecond of spin coherence in Er3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enabled by reducing the dopant density below the instantaneous diffusion limit in a nuclear spin-free host material, reaching the limit of a single erbium s… ▽ More We demonstrate nearly a microsecond of spin coherence in Er3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enabled by reducing the dopant density below the instantaneous diffusion limit in a nuclear spin-free host material, reaching the limit of a single erbium spin defect per nanocrystal. We observe a large Orbach energy in a highly symmetric cubic site, further protecting the coherence in a qubit that would otherwise rapidly decohere. Spatially correlated electron spectroscopy measurements reveal the presence of Ce3+ at the nanocrystal surface that likely acts as extraneous paramagnetic spin noise. Even with these factors, defect-embedded nanocrystal hosts show tremendous promise for quantum sensing and quantum communication applications, with multiple avenues, including core-shell fabrication, redox tuning of oxygen vacancies, and organic surfactant modification, available to further enhance their spin coherence and functionality in the future. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Comments: 26 pages, 5 figures

Formation of Mn-rich interfacial phases in Co2FexMn1-xSi thin films

Authors: Ka Ming Law, Arashdeep S. Thind, Mihir Pendharkar, Sahil J. Patel, Joshua J. Phillips, Chris J. Palmstrom, Jaume Gazquez, Albina Borisevich, Rohan Mishra, Adam J. Hauser

Abstract: We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveals that each interfacial region: (1) is 1-2 nm wide, (2) occurs irrespective of the Fe/Mn composition ratio and in both Co-rich and Co-poor films, and… ▽ More We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveals that each interfacial region: (1) is 1-2 nm wide, (2) occurs irrespective of the Fe/Mn composition ratio and in both Co-rich and Co-poor films, and (3) displaces both Co and Fe indiscriminately. We also observe a Mn-depleted region in each film directly above each Mn-rich interfacial layer, roughly 3 nm in width in the x = 0 and x = 0.3 films, and 1 nm in the x = 0.7 (less Mn) film. We posit that growth energetics favor Mn diffusion to the interface even when there is no significant Ga interdiffusion into the epitaxial film. Element-specific X-ray magnetic circular dichroism (XMCD) measurements show larger Co, Fe, and Mn orbital to spin magnetic moment ratios compared to bulk values across the Co2FexMn1-xSi compositional range. The values lie between reported values for pure bulk and nanostructured Co, Fe, and Mn materials, corroborating the non-uniform, layered nature of the material on the nanoscale. Finally, SQUID magnetometry demonstrates that the films deviate from the Slater-Pauling rule for uniform films of both the expected and the measured composition. The results inform a need for care and increased scrutiny when forming Mn-based magnetic thin films on III-V semiconductors like GaAs, particularly when films are on the order of 5 nm or when interface composition is critical to spin transport or other device applications. △ Less

Submitted 24 December, 2023; originally announced December 2023.

Polymorphism in Ruddlesden-Popper $La_{3}Ni_{2}O_{7}$: Discovery of a Hidden Phase with Distinctive Layer Stacking

Authors: Xinglong Chen, Junjie Zhang, A. S. Thind, S. Sharma, H. LaBollita, G. Peterson, H. Zheng, D. Phelan, A. S. Botana, R. F. Klie, J. F. Mitchell

Abstract: We report the discovery of a novel form of Ruddlesden-Popper (RP) oxide, which stands as the first example of long-range, coherent polymorphism in this class of inorganic solids. Rather than the well-known, uniform stacking of perovskite blocks ubiquitously found in RP phases, this newly discovered polymorph of the bilayer RP phase $La_{3}Ni_{2}O_{7}$adopts a novel stacking sequence in which singl… ▽ More We report the discovery of a novel form of Ruddlesden-Popper (RP) oxide, which stands as the first example of long-range, coherent polymorphism in this class of inorganic solids. Rather than the well-known, uniform stacking of perovskite blocks ubiquitously found in RP phases, this newly discovered polymorph of the bilayer RP phase $La_{3}Ni_{2}O_{7}$adopts a novel stacking sequence in which single and trilayer blocks of $NiO_{6}$ octahedra alternate in a 1313 sequence. Crystals of this new polymorph are described in space group Cmmm, although we note evidence for a competing Imcm variant. Transport measurements at ambient pressure reveal metallic character with evidence of a charge density wave transition with onset at T = 134 K, which lies intermediate between that of the standard 2222 polymorph of $La_{3}Ni_{2}O_{7}$ (space group Amam) and the trilayer RP phase, $La_{4}Ni_{3}O_{10}$. The discovery of such polymorphism could reverberate to the expansive range of science and applications that rely on RP materials, particularly the recently reported signatures of superconductivity with $T_{c}$ as high as 80 K above 14 GPa in bilayer $La_{3}Ni_{2}O_{7}$. △ Less

Submitted 10 December, 2023; originally announced December 2023.

Comments: 37 pages, 10 figures

Giant Modulation of Refractive Index from Picoscale Atomic Displacements

Authors: Boyang Zhao, Guodong Ren, Hongyan Mei, Vincent C. Wu, Shantanu Singh, Gwan-Yeong Jung, Huandong Chen, Raynald Giovine, Shanyuan Niu, Arashdeep S. Thind, Jad Salman, Nick S. Settineri, Bryan C. Chakoumakos, Michael E. Manley, Raphael P. Hermann, Andrew R. Lupini, Miaofang Chi, Jordan A. Hachtel, Arkadiy Simonov, Simon J. Teat, Raphaële J. Clément, Mikhail A. Kats, J. Ravichandran, Rohan Mishra

Abstract: Structural disorder has been shown to enhance and modulate magnetic, electrical, dipolar, electrochemical, and mechanical properties of materials. However, the possibility of obtaining novel optical and optoelectronic properties from structural disorder remains an open question. Here, we show unambiguous evidence of disorder in the form of anisotropic, picoscale atomic displacements modulating the… ▽ More Structural disorder has been shown to enhance and modulate magnetic, electrical, dipolar, electrochemical, and mechanical properties of materials. However, the possibility of obtaining novel optical and optoelectronic properties from structural disorder remains an open question. Here, we show unambiguous evidence of disorder in the form of anisotropic, picoscale atomic displacements modulating the refractive index tensor and resulting in the giant optical anisotropy observed in BaTiS$_3$, a quasi-one-dimensional hexagonal chalcogenide. Single crystal X-ray diffraction studies reveal the presence of antipolar displacements of Ti atoms within adjacent TiS$_6$ chains along the c-axis, and three-fold degenerate Ti displacements in the a-b plane. $^{47/49}$Ti solid-state NMR provides additional evidence for those Ti displacements in the form of a three-horned NMR lineshape resulting from a low symmetry local environment around Ti atoms. We used scanning transmission electron microscopy to directly observe the globally disordered Ti a-b plane displacements and find them to be ordered locally over a few unit cells. First-principles calculations show that the Ti a-b plane displacements selectively reduce the refractive index along the ab-plane, while having minimal impact on the refractive index along the chain direction, thus resulting in a giant enhancement in the optical anisotropy. By showing a strong connection between structural disorder with picoscale displacements and the optical response in BaTiS$_3$, this study opens a pathway for designing optical materials with high refractive index and functionalities such as large optical anisotropy and nonlinearity. △ Less

Submitted 19 March, 2024; v1 submitted 6 October, 2023; originally announced October 2023.

Comments: 24 pages, 3 figures

Dual mechanisms for transient capacitance anomaly in improper ferroelectrics

Authors: Xin Li, Yu Yun, Pratyush Buragohain, Arashdeep Singh Thind, Donald A. Walko, Detian Yang, Rohan Mishra, Alexei Gruverman, Xiaoshan Xu

Abstract: The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance in improper ferroelectric h-YbFeO3 films in a resistor-capacitor circuit, and a concaved shape of anomaly in the voltage wave form, in the early and late stage o… ▽ More The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance in improper ferroelectric h-YbFeO3 films in a resistor-capacitor circuit, and a concaved shape of anomaly in the voltage wave form, in the early and late stage of the polarizations switching respectively. Using a phenomenological model, we show that the early-stage negative capacitance is likely due to the inhomogeneous switching involving nucleation and domain wall motion, while the anomaly at the late stage, which appears to be a reminiscent negative capacitance is the manifestation of the thermodynamically unstable part of the free-energy landscape in the homogeneous switching. The complex free-energy landscape in hexagonal ferrites may be the key to cause the abrupt change in polarization switching speed and the corresponding anomaly. These results reconcile the two seemingly conflicting mechanisms in the polarization switching and highlight their different roles at different stages. The unique energy-landscape in hexagonal ferrites that reveals the dual switching mechanism suggests the promising application potential in terms of negative capacitance. △ Less

Submitted 6 September, 2024; v1 submitted 25 September, 2023; originally announced September 2023.

Comments: 14 pages,5 figures

Colossal optical anisotropy from atomic-scale modulations

Authors: Hongyan Mei, Guodong Ren, Boyang Zhao, Jad Salman, Gwan Yeong Jung, Huandong Chen, Shantanu Singh, Arashdeep S. Thind, John Cavin, Jordan A. Hachtel, Miaofang Chi, Shanyuan Niu, Graham Joe, Chenghao Wan, Nick Settineri, Simon J. Teat, Bryan C. Chakoumakos, Jayakanth Ravichandran, Rohan Mishra, Mikhail A. Kats

Abstract: In modern optics, materials with large birefringence (Δn, where n is the refractive index) are sought after for polarization control (e.g. in wave plates, polarizing beam splitters, etc.), nonlinear optics and quantum optics (e.g. for phase matching and production of entangled photons), micromanipulation, and as a platform for unconventional light-matter coupling, such as Dyakonov-like surface pol… ▽ More In modern optics, materials with large birefringence (Δn, where n is the refractive index) are sought after for polarization control (e.g. in wave plates, polarizing beam splitters, etc.), nonlinear optics and quantum optics (e.g. for phase matching and production of entangled photons), micromanipulation, and as a platform for unconventional light-matter coupling, such as Dyakonov-like surface polaritons and hyperbolic phonon polaritons. Layered "van der Waals" materials, with strong intra-layer bonding and weak inter-layer bonding, can feature some of the largest optical anisotropy; however, their use in most optical systems is limited because their optic axis is out of the plane of the layers and the layers are weakly attached, making the anisotropy hard to access. Here, we demonstrate that a bulk crystal with subtle periodic modulations in its structure -- Sr9/8TiS3 -- is transparent and positive-uniaxial, with extraordinary index n_e = 4.5 and ordinary index n_o = 2.4 in the mid- to far-infrared. The excess Sr, compared to stoichiometric SrTiS3, results in the formation of TiS6 trigonal-prismatic units that break the infinite chains of face-shared TiS6 octahedra in SrTiS3 into periodic blocks of five TiS6 octahedral units. The additional electrons introduced by the excess Sr subsequently occupy the TiS6 octahedral blocks to form highly oriented and polarizable electron clouds, which selectively boost the extraordinary index n_e and result in record birefringence (Δn > 2.1 with low loss). The connection between subtle structural modulations and large changes in refractive index suggests new categories of anisotropic materials and also tunable optical materials with large refractive-index modulation and low optical losses. △ Less

Submitted 21 July, 2023; v1 submitted 28 February, 2023; originally announced March 2023.

Comments: Main text + supplementary

Epitaxial Thin Films of a Chalcogenide Perovskite

Authors: Mythili Surendran, Huandong Chen, Boyang Zhao, Arashdeep Singh Thind, Shantanu Singh, Thomas Orvis, Huan Zhao, Jae-Kyung Han, Han Htoon, Megumi Kawasaki, Rohan Mishra, Jayakanth Ravichandran

Abstract: Chalcogenide perovskites have emerged as a new class of electronic materials, but fundamental properties and applications of chalcogenide perovskites remain limited by the lack of high quality epitaxial thin films. We report epitaxial thin film growth of BaZrS3, a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out of plane… ▽ More Chalcogenide perovskites have emerged as a new class of electronic materials, but fundamental properties and applications of chalcogenide perovskites remain limited by the lack of high quality epitaxial thin films. We report epitaxial thin film growth of BaZrS3, a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out of plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though away from the interface the films are polycrystalline with a large number of extended defects suggesting the potential for further improvement in growth. X-Ray reflectivity and atomic force microscopy show smooth film surfaces and interfaces between the substrate and the film. The films show strong light absorption near the band edge and photoluminescence in the visible region. The photodetector devices show fast and efficient photo response with the highest ON/OFF ratio reported for BaZrS3 films thus far. Our study opens up opportunities to realize epitaxial thin films, heterostructures, and superlattices of chalcogenide perovskites to probe fundamental physical phenomena and the resultant electronic and photonic device technologies. △ Less

Submitted 24 May, 2021; originally announced May 2021.

Journal ref: Chem. Mater. 2021, 33, 18, 7457

Magnetoelectric coupling and decoupling in multiferroic hexagonal YbFeO3 thin films

Authors: Yu Yun, Xin Li, Arashdeep Singh Thind, Yuewei Yin, Hao Liu, Qiang Li, Wenbin Wang, Alpha T. N Diaye, Corbyn Mellinger, Xuanyuan Jiang, Rohan Mishra, Xiaoshan Xu

Abstract: The coupling between ferroelectric and magnetic orders in multiferroic materials and the nature of magnetoelectric (ME) effects are enduring experimental challenges. In this work, we have studied the response of magnetization to ferroelectric switching in thin-film hexagonal YbFeO3, a prototypical improper multiferroic. The bulk ME decoupling and potential domain-wall ME coupling were revealed usi… ▽ More The coupling between ferroelectric and magnetic orders in multiferroic materials and the nature of magnetoelectric (ME) effects are enduring experimental challenges. In this work, we have studied the response of magnetization to ferroelectric switching in thin-film hexagonal YbFeO3, a prototypical improper multiferroic. The bulk ME decoupling and potential domain-wall ME coupling were revealed using x-ray magnetic circular dichroism (XMCD) measurements with in-situ ferroelectric polarization switching. Our Landau theory analysis suggests that the bulk ME-coupled ferroelectric switching path has a higher energy barrier than that of the ME-decoupled path; this extra barrier energy is also too high to be reduced by the magneto-static energy in the process of breaking single magnetic domains into multi-domains. In addition, the reduction of magnetization around the ferroelectric domain walls predicted by the Landau theory may induce the domain-wall ME coupling in which the magnetization is correlated with the density of ferroelectric domain walls. These results provide important experimental evidence and theoretical insights into the rich possibilities of ME couplings in hexagonal ferrites, such as manipulating the magnetic states by an electric field. △ Less

Submitted 13 November, 2020; originally announced November 2020.

Comments: 33 pages, 14 figures

Stochastic Replica Voting Machine Prediction of Stable Cubic and Double Perovskite Materials and Binary Alloys

Authors: T. Mazaheri, Bo Sun, J. Scher-Zagier, A. S. Thind, D. Magee, P. Ronhovde, T. Lookman, R. Mishra, Z. Nussinov

Abstract: A machine learning approach that we term the `Stochastic Replica Voting Machine' (SRVM) algorithm is presented and applied to a binary and a 3-class classification problems in materials science. Here, we employ SRVM to predict candidate compounds capable of forming stable perovskites and double perovskites and further classify binary ($AB$) solids. The results of our binary and ternary classificat… ▽ More A machine learning approach that we term the `Stochastic Replica Voting Machine' (SRVM) algorithm is presented and applied to a binary and a 3-class classification problems in materials science. Here, we employ SRVM to predict candidate compounds capable of forming stable perovskites and double perovskites and further classify binary ($AB$) solids. The results of our binary and ternary classifications compared well to those obtained by SVM and neural network algorithms. △ Less

Submitted 1 April, 2019; v1 submitted 23 May, 2017; originally announced May 2017.

Comments: 45 pages, 25 figures

Journal ref: Phys. Rev. Materials 3, 063802 (2019)