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Massive and topological surface states in tensile strained HgTe
Authors:
David M. Mahler,
Valentin L. Müller,
Cornelius Thienel,
Jonas Wiedenmann,
Wouter Beugeling,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
Magneto-transport measurements on gated high mobility heterostructures containing a 60 nm layer of tensile strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the p-type regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital k.p calcul…
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Magneto-transport measurements on gated high mobility heterostructures containing a 60 nm layer of tensile strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the p-type regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital k.p calculations that the p-type transport results from massive Volkov-Pankratov states. Their formation prevents the Dirac point and thus the p-conducting topological surface state from being accessible in transport experiments. This interpretation is supported by low-field magneto-transport experiments demonstrating the coexistence of n-conducting topological surface states and p-conducting Volkov-Pankratov states at the relevant gate voltages.
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Submitted 23 November, 2021;
originally announced November 2021.
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Temperature-driven transition from a semiconductor to a topological insulator
Authors:
Steffen Wiedmann,
Andreas Jost,
Cornelius Thienel,
Christoph Brüne,
Philipp Leubner,
Hartmut Buhmann,
Laurens W. Molenkamp,
J. C. Maan,
Uli Zeitler
Abstract:
We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At roo…
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We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At room temperature, we find electron and hole conduction that can be described by a classical two-carrier model. Above the onset of quantized magnetotransport at low temperature, we observe a pronounced linear magnetoresistance that develops from a classical quadratic low-field magnetoresistance if electrons and holes coexist. Temperature-dependent bulk band structure calculations predict a transition from a conventional semiconductor to a topological insulator in the regime where the linear magnetoresistance occurs.
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Submitted 22 May, 2015;
originally announced May 2015.
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Dirac-screening stabilized surface-state transport in a topological insulator
Authors:
Christoph Brüne,
Cornelius Thienel,
Michael Stuiber,
Jan Böttcher,
Hartmut Buhmann,
Elena G. Novik,
Chao-Xing Liu,
Ewelina M. Hankiewicz,
Laurens W. Molenkamp
Abstract:
We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range ($3 \times 10^{11} cm^{-2} < n < 1 \times 10^{12} cm^{-2}$). This implies that even at large carrier d…
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We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range ($3 \times 10^{11} cm^{-2} < n < 1 \times 10^{12} cm^{-2}$). This implies that even at large carrier densities the transport is surface state dominated, where bulk transport would have been expected to coexist already. Moreover, the density dependence of the Dirac-type quantum Hall effect allows to identify the contributions from the individual surfaces. A $k \cdot p$ model can describe the experiments, but only when assuming a steep band bending across the regions where the topological surface states are contained. This steep potential originates from the specific screening properties of Dirac systems and causes the gate voltage to influence the position of the Dirac points rather than that of the Fermi level.
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Submitted 24 July, 2014;
originally announced July 2014.
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Self-consistent $\textbf{k}\cdot \textbf{p}$ calculations for gated thin layers of 3D Topological Insulators
Authors:
Yuval Baum,
Jan Böttcher,
Christoph Brüne,
Cornelius Thienel,
Laurens W. Molenkamp,
Ady Stern,
Ewelina M. Hankiewicz
Abstract:
Topological protected surface states are one of the hallmarks of three-dimensional topological insulators. In this work we theoretically analyze the gate-voltage-effects on a quasi-3D layer of HgTe. We find that while the gapless surface states dominate the transport, as an external gate voltage is applied, the existence of bulk charge carriers is likely to occur. We also find that due to screenin…
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Topological protected surface states are one of the hallmarks of three-dimensional topological insulators. In this work we theoretically analyze the gate-voltage-effects on a quasi-3D layer of HgTe. We find that while the gapless surface states dominate the transport, as an external gate voltage is applied, the existence of bulk charge carriers is likely to occur. We also find that due to screening effects, physical properties that arise from the bottom surface are gate-voltage independent. Finally, we point out the experimental signatures that characterize these effects.
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Submitted 15 May, 2014;
originally announced May 2014.
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Backscattering of Dirac fermions in HgTe quantum wells with a finite gap
Authors:
G. Tkachov,
C. Thienel,
V. Pinneker,
B. Buettner,
C. Bruene,
H. Buhmann,
L. W. Molenkamp,
E. M. Hankiewicz
Abstract:
The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac…
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The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac fermions from random fluctuations of the band gap (Dirac mass). Our findings open new avenues for the study of Dirac fermion transport with finite and random mass, which so far has been hard to access.
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Submitted 21 April, 2011; v1 submitted 29 January, 2011;
originally announced January 2011.
