Showing 1–11 of 11 results for author: Thakur, J S

Influence of excitation frequency on Raman modes of In1-xGaxN thin films

Authors: A. Dixit, J. S. Thakur, V. M. Naik, R. Naik

Abstract: Low energy optical modes of MBE-grown In1-xGaxN thin films with different values of x are investigated using Raman spectroscopy. We also studied the influence of Raman excitation frequency using red and green lasers on scattering intensity of various Raman modes. For those In1-xGaxN alloys whose bandgap energy is close to the red laser, a huge enhancement in the intensities of A1(LO) mode and its… ▽ More Low energy optical modes of MBE-grown In1-xGaxN thin films with different values of x are investigated using Raman spectroscopy. We also studied the influence of Raman excitation frequency using red and green lasers on scattering intensity of various Raman modes. For those In1-xGaxN alloys whose bandgap energy is close to the red laser, a huge enhancement in the intensities of A1(LO) mode and its 2A1(LO) replica is observed when excited with red laser as compared to the green laser excitation. We found that the energies of longitudinal optical modes (A1 (LO) and 2A1 (LO)) vary nonlinearly unlike the E2 mode with increasing Ga atomic fraction. A Raman mode ~ 540 cm-1 was observed in all In1-xGaxN films with low energy red laser excitation but was absent with green laser excitation. We attribute this mode to A1(TO) mode of the underneath GaN buffer layer. △ Less

Submitted 21 July, 2013; originally announced July 2013.

Comments: Submitted to Journal of Physics:Condensed Matter

Comment on ``Four-Point Resistance of Individual Single-Wall Carbon Nanotubes'' by Gao et al. PRL 95, 196208 (2005)

Authors: Mukunda P. Das, Frederick Green, Jagdish S. Thakur

Abstract: We remark on some delicate points that attend the physical meaning of intrinsic device resistance. We remark on some delicate points that attend the physical meaning of intrinsic device resistance. △ Less

Submitted 21 June, 2006; v1 submitted 25 January, 2006; originally announced January 2006.

Comments: fixed typos

Where is the Shot Noise of a Quantum Point Contact?

Authors: Frederick Green, Jagdish S. Thakur, Mukunda P. Das

Abstract: Reznikov et al. (Phys. Rev. Lett. 75, 3340 (1995)) have presented definitive observations of nonequilibrium noise in a quantum point contact. Especially puzzling is the "anomalous" peak structure of the excess noise measured at constant current; to date it remains unexplained. We show that their experiment directly reveals the deep link between conservation principles in the electron gas and its… ▽ More Reznikov et al. (Phys. Rev. Lett. 75, 3340 (1995)) have presented definitive observations of nonequilibrium noise in a quantum point contact. Especially puzzling is the "anomalous" peak structure of the excess noise measured at constant current; to date it remains unexplained. We show that their experiment directly reveals the deep link between conservation principles in the electron gas and its low-dimensional, mesoscopic behavior. Key to that connection are gauge invariance and the compressibility sum rule. These are central not only to the experiment of Reznikov et al. but to the very nature of all mesoscopic transport. △ Less

Submitted 15 July, 2004; originally announced July 2004.

Journal ref: Phys. Rev. Lett. 92, 156804 (2004)

Quantum Point Contacts and Beyond: New Results on Mesoscopic Conductance and Fluctuations

Authors: Mukunda P. Das, Frederick Green, Jagdish S. Thakur

Abstract: We summarize the main results of a microscopically based kinetic theory, applicable to open quantum point contacts (QPCs) driven up to high fields. The governing role of gauge invariance -- and the many-body sum rules for the electron gas -- lead to stringent constraints on both transport and fluctuations. These constraints exert a dominant influence on the observable properties of QPCs and simi… ▽ More We summarize the main results of a microscopically based kinetic theory, applicable to open quantum point contacts (QPCs) driven up to high fields. The governing role of gauge invariance -- and the many-body sum rules for the electron gas -- lead to stringent constraints on both transport and fluctuations. These constraints exert a dominant influence on the observable properties of QPCs and similar open mesoscopic conductors. We illustrate this in the context of certain predictions within purely phenomenological models of mesoscopic transport. △ Less

Submitted 16 April, 2004; originally announced April 2004.

Comments: TeX, 22 pp, 7 figs. See also Green et al., Phys. Rev. Lett. 92, 156804 (2004)

Mesoscopic Transport: The Electron-Gas Sum Rules in a Driven Quantum Point Contact

Authors: Mukunda P. Das, Jagdish S. Thakur, Frederick Green

Abstract: The nature of the electron gas is characterized, above all, by its multi-particle correlations. The conserving sum rules for the electron gas have been thoroughly studied for many years, and their centrality to the physics of metallic conduction is widely understood (at least in the many-body community). We review the role of the conserving sum rules in mesoscopic transport, as normative criteri… ▽ More The nature of the electron gas is characterized, above all, by its multi-particle correlations. The conserving sum rules for the electron gas have been thoroughly studied for many years, and their centrality to the physics of metallic conduction is widely understood (at least in the many-body community). We review the role of the conserving sum rules in mesoscopic transport, as normative criteria for assessing the conserving status of mesoscopic models. In themselves, the sum rules are specific enough to rule out any such theory if it fails to respect the conservation laws. Of greater interest is the capacity of the compressibility sum rule, in particular, to reveal unexpected fluctuation effects in nonuniform mesoscopic structures. △ Less

Submitted 9 January, 2004; v1 submitted 8 January, 2004; originally announced January 2004.

Comments: TeX, 11pp, no fig

Journal ref: Int. J. Mod. Phys. B 18, 1479 (2004)

A central role for the exchange-correlation hole in the 2D metal-insulator transition

Authors: D. J. W. Geldart, D. Neilson, J. S. Thakur

Abstract: The 2D metal-insulator transition can be induced either by decreasing the carrier density or by increasing the spin polarization by applying a magnetic field parallel to the plane. Using experimental results for the shift in critical carrier density in an applied field, we show that the two-electron pair correlation function at short distance ($k_Fr\alt2$) has a universal form along the transiti… ▽ More The 2D metal-insulator transition can be induced either by decreasing the carrier density or by increasing the spin polarization by applying a magnetic field parallel to the plane. Using experimental results for the shift in critical carrier density in an applied field, we show that the two-electron pair correlation function at short distance ($k_Fr\alt2$) has a universal form along the transition line in the magnetic field-carrier density plane. This result provides direct evidence of the central role of Coulomb repulsion and the exchange-correlation hole in driving the metal-insulator transition. △ Less

Submitted 11 October, 2000; originally announced October 2000.

Comments: 8 pages, 4 figures

Central role of exchange-correlation hole in the 2D metal-insulator

Authors: J. S. Thakur, D. Neilson

Abstract: We show that the metal to insulator transition, whether generated by decreasing the electron density or by increasing the spin alignment, is determined by a universal functional form of the two-electron correlation function g(r). This result provides direct evidence of the central role of the Coulomb repulsion and exchange in driving the metal-insulator transition. We show that the metal to insulator transition, whether generated by decreasing the electron density or by increasing the spin alignment, is determined by a universal functional form of the two-electron correlation function g(r). This result provides direct evidence of the central role of the Coulomb repulsion and exchange in driving the metal-insulator transition. △ Less

Submitted 31 January, 2000; originally announced January 2000.

Comments: 5 pages in ReVTeX, 2 encapsulated postscript figures

Destabilization of the 2D conducting phase by an in-plane magnetic field

Authors: J. S. Thakur, D. Neilson

Abstract: We propose a mechanism for the recently reported destabilization by an in-plane magnetic field of the conducting phase of low density electrons in 2D. We apply our self-consistent approach based on the memory function formalism to the fully spin polarized electron system. This takes into account both disorder and exchange-correlation effects. We show that spin polarization significantly favors l… ▽ More We propose a mechanism for the recently reported destabilization by an in-plane magnetic field of the conducting phase of low density electrons in 2D. We apply our self-consistent approach based on the memory function formalism to the fully spin polarized electron system. This takes into account both disorder and exchange-correlation effects. We show that spin polarization significantly favors localization because of the enhancement of the exchange-correlations. A key outcome is that the conducting phase for the fully spin polarized system is significantly suppressed. The in-plane magnetic field needed to stabilize the fully spin polarized state lies in the range 0.1<H<1 T, depending on the carrier density. We determine the metal-insulator phase diagram for the unpolarized and fully polarized systems, and we estimate the dependence of the critical magnetic field on carrier density. △ Less

Submitted 23 December, 1998; v1 submitted 21 December, 1998; originally announced December 1998.

Comments: 4 pages, RevTeX + epsf, 7 figures. Minor changes to text and figures. Additional references

Metal-insulator transition in disordered 2DEG including temperature effects

Authors: J. S. Thakur, Lerwen Liu, D. Neilson

Abstract: We calculate self-consistently the mutual dependence of electron correlations and electron-defect scattering for a two dimensional electron gas at finite temperature. We employ an STLS approach to calculate the electron correlations while the electron scattering rate off Coulombic impurities and surface roughness is calculated using self-consistent current-relaxation theory. The methods are comb… ▽ More We calculate self-consistently the mutual dependence of electron correlations and electron-defect scattering for a two dimensional electron gas at finite temperature. We employ an STLS approach to calculate the electron correlations while the electron scattering rate off Coulombic impurities and surface roughness is calculated using self-consistent current-relaxation theory. The methods are combined and self-consistently solved. We discuss a metal-insulator transition for a range of disorder levels and electron densities. Our results are in good agreement with recent experimental observations. △ Less

Submitted 27 October, 1998; v1 submitted 26 October, 1998; originally announced October 1998.

Comments: 4 pages, RevTeX + epsf, 5 figures

Superconductivity in correlated disordered two-dimensional electron gas

Authors: J. S. Thakur, D. Neilson

Abstract: We calculate the dynamic effective electron-electron interaction potential for a low density disordered two-dimensional electron gas. The disordered response function is used to calculate the effective potential where the scattering rate is taken from typical mobilities from recent experiments. We investigate the development of an effective attractive pair potential for both disordered and disor… ▽ More We calculate the dynamic effective electron-electron interaction potential for a low density disordered two-dimensional electron gas. The disordered response function is used to calculate the effective potential where the scattering rate is taken from typical mobilities from recent experiments. We investigate the development of an effective attractive pair potential for both disordered and disorder free systems with correlations determined from existing numerical simulation data. The effect of disorder and correlations on the superconducting critical temperature Tc is discussed. △ Less

Submitted 27 October, 1998; v1 submitted 26 October, 1998; originally announced October 1998.

Comments: 4 pages, RevTeX + epsf, 4 figures

Phase diagram of the metal-insulator transition in 2D electronic systems

Authors: J. S. Thakur, D. Neilson

Abstract: We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the carrier density we find two different types of metal-insulator transition - a continuous localization for rs=<8 and a discontinuous transition at higher rs. The cr… ▽ More We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the carrier density we find two different types of metal-insulator transition - a continuous localization for rs=<8 and a discontinuous transition at higher rs. The critical level of disorder at the transition decreases with decreasing carrier density. At very low carrier densities we find that the system is always insulating. The value of the conductivity at the transition is consistent with recent experimental measurements. The self-consistent method which we have developed includes the effects of both disorder and correlations on the transition, using a density relaxation theory with the Coulomb correlations determined from numerical simulation data. △ Less

Submitted 29 October, 1998; v1 submitted 22 October, 1998; originally announced October 1998.

Comments: 4 pages, RevTeX + epsf, 5 figures. New comments on conducting phase and on the conductivity. References updated and corrected