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Solar induced growth of silver nanocrystals
Authors:
Annett Thøgersen,
Georg Muntingh
Abstract:
The effect of solar irradiation on plasmonic silver nanocrystals has been investigated using Transmission Electron Microscopy and size distribution analysis, in the context of solar cell applications for light harvesting. Starting from an initial collection of spherical nanocrystals on a carbon film whose sizes are log-normally distributed, solar irradiation causes the nanocrystals to grow, with o…
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The effect of solar irradiation on plasmonic silver nanocrystals has been investigated using Transmission Electron Microscopy and size distribution analysis, in the context of solar cell applications for light harvesting. Starting from an initial collection of spherical nanocrystals on a carbon film whose sizes are log-normally distributed, solar irradiation causes the nanocrystals to grow, with one particle reaching a diameter of 638 nm after four hours of irradiation. In addition some of the larger particles lose their spherical shape. The average nanocrystal diameter was found to grow as predicted by the Ostwald ripening model, taking into account the range of area fractions of the samples. The size distribution stays approximately log-normal and does not reach one of the steady-state size distributions predicted by the Ostwald ripening model. This might be explained by the system being in a transient state.
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Submitted 21 January, 2013; v1 submitted 4 December, 2012;
originally announced December 2012.
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Oxidation effects on graded porous silicon anti-reflection coatings
Authors:
Annett Thøgersen,
Josefine H. Selj,
Erik S. Marstein
Abstract:
Efficient anti-reflection coatings (ARC) improve the light collection and thereby increase the current output of solar cells. By simple electrochemical etching of the Si wafer, porous silicon (PS) layers with excellent broadband anti-reflection properties can be fabricated. In this work, ageing of graded PS has been studied using Spectroscopic Ellipsometry, Transmission Electron Microscopy and X-r…
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Efficient anti-reflection coatings (ARC) improve the light collection and thereby increase the current output of solar cells. By simple electrochemical etching of the Si wafer, porous silicon (PS) layers with excellent broadband anti-reflection properties can be fabricated. In this work, ageing of graded PS has been studied using Spectroscopic Ellipsometry, Transmission Electron Microscopy and X-ray Photoelectron Spectroscopy. During oxidation of PS elements such as pure Si (Si$^0$), Si$_2$O (Si$^+$), SiO (Si$^{2+}$), Si$_2$O$_3$ (Si$^{3+}$), and SiO$_2$ (Si$^{4+}$) are present. In addition both hydrogen and carbon is introduced to the PS in the form of Si$_3$SiH and CO. The oxide grows almost linearly with time when exposed to oxygen, from an average thickness of 0 - 3.8 nm for the surface PS. The oxidation is then correlated to the optical stability of multi-layered PS ARCs. It is found that even after extensive oxidation, the changes in the optical properties of the PS structures are small.
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Submitted 28 September, 2012;
originally announced October 2012.
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Elemental distribution and oxygen deficiency of magnetron sputtered ITO films
Authors:
Annett Thøgersen,
Margrethe Rein,
Edouard Monakhov,
Jeyanthinath Mayandi,
Spyros Diplas
Abstract:
The atomic structure and composition of non-interfacial ITO and ITO-Si interfaces were studied with Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). The films were deposited by DC magnetron sputtering on mono-crystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated com…
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The atomic structure and composition of non-interfacial ITO and ITO-Si interfaces were studied with Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). The films were deposited by DC magnetron sputtering on mono-crystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated composition. A thin layer of SiO$_x$ was found at the ITO/Si interface together with In and Sn nanoclusters, as well as highly oxygen deficient regions, as observed by XPS. High energy electron exposure of this area crystallized the In nanoclusters and at the same time increased the SiO$_x$ interface layer thickness.
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Submitted 28 September, 2012;
originally announced October 2012.
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Composition and structure of Pd nanoclusters in SiO$_x$ thin film
Authors:
Annett Thøgersen,
Jeyanthinath Mayandi,
Lasse Vines,
Martin F. Sunding,
Arne Olsen,
Spyros Diplas,
Masanori Mitome,
Yoshio Bando
Abstract:
The nucleation, distribution, composition and structure of Pd nanocrystals in SiO$_2$ multilayers containing Ge, Si, and Pd are studied using High Resolution Transmission Electron Microscopy (HRTEM) and X-ray Photoelectron Spectroscopy (XPS), before and after heat treatment. The Pd nanocrystals in the as deposited sample seem to be capped by a layer of PdO$_x$. A 1-2 eV shift in binding energy was…
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The nucleation, distribution, composition and structure of Pd nanocrystals in SiO$_2$ multilayers containing Ge, Si, and Pd are studied using High Resolution Transmission Electron Microscopy (HRTEM) and X-ray Photoelectron Spectroscopy (XPS), before and after heat treatment. The Pd nanocrystals in the as deposited sample seem to be capped by a layer of PdO$_x$. A 1-2 eV shift in binding energy was found for the Pd-3d XPS peak, due to initial state Pd to O charge transfer in this layer. The heat treatment results in a decomposition of PdO and Pd into pure Pd nanocrystals and SiO$_2$.
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Submitted 28 September, 2012;
originally announced October 2012.
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The formation of Er-oxide nanoclusters in SiO$_2$ thin films with excess Si
Authors:
Annett Thøgersen,
Jeyanthinath Mayandi,
Terje Finstad,
Arne Olsen,
Spyros Diplas,
Masanori Mitome,
Yoshio Bando
Abstract:
The nucleation, distribution and composition of erbium embedded in a SiO$_2$-Si layer were studied with High Resolution Transmission Electron Microscopy (HRTEM), Electron Energy Loss Spectroscopy (EELS), Energy Filtered TEM (EFTEM), Scanning Transmission Electron Microscopy (STEM) and X-ray Photoelectron Spectroscopy (XPS). When the SiO$_2$ layer contains small amounts of Si and Er, nanoclusters o…
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The nucleation, distribution and composition of erbium embedded in a SiO$_2$-Si layer were studied with High Resolution Transmission Electron Microscopy (HRTEM), Electron Energy Loss Spectroscopy (EELS), Energy Filtered TEM (EFTEM), Scanning Transmission Electron Microscopy (STEM) and X-ray Photoelectron Spectroscopy (XPS). When the SiO$_2$ layer contains small amounts of Si and Er, nanoclusters of Er-oxide are formed throughout the whole layer. Exposure of the oxide to an electron beam with 1.56*10$^6$ electrons/nm$^2$/sec. causes nanocluster growth. Initially this growth matches the Ostwald ripening model, but eventually it stagnates at a constant nanocluster radius of 2.39 nm.
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Submitted 28 September, 2012;
originally announced October 2012.
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Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers
Authors:
Annett Thøgersen,
Jeyanthinath Mayandi,
Terje G. Finstad,
Arne Olsen,
Jens Sherman Christensen,
Masanori Mitome,
Yoshio Bando
Abstract:
The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm S…
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The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO$_2$ layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800$^o$C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO$_2$ sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO$_2$-RTO layer is more Si rich due to Si diffusion from the SiO$_2$-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.
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Submitted 28 September, 2012;
originally announced September 2012.
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An experimental study of charge distribution in crystalline and amorphous Si nanoclusters in thin silica films
Authors:
Annett Thøgersen,
Spyros Diplas,
Jeyanthinath Mayandi,
Terje Finstad,
Arne Olsen,
John F. Watts,
Masanori Mitome,
Yoshio Bando
Abstract:
Crystalline and amorphous nanoparticles of silicon in thin silica layers were examined by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and x-ray photoelectron spectroscopy (XPS). We used XPS data in the form of the Auger parameter to separate initial and final state contributions to the Si$_{2p}$ energy shift. The electrostatic charging and electron screening is…
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Crystalline and amorphous nanoparticles of silicon in thin silica layers were examined by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and x-ray photoelectron spectroscopy (XPS). We used XPS data in the form of the Auger parameter to separate initial and final state contributions to the Si$_{2p}$ energy shift. The electrostatic charging and electron screening issues as well as initial state effects were also addressed. We show that the chemical shift in the nanocrystals is determined by initial state rather than final state effects, and that the electron screening of silicon core holes in nanocrystals dispersed in SiO$_2$ is inferior to that in pure bulk Si.
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Submitted 28 September, 2012;
originally announced September 2012.
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MgyNi1-y(Hx) thin films deposited by magnetron co-sputtering
Authors:
Trygve Mongstad,
Chang C. You,
Annett Thøgersen,
Jan Petter Mæhlen,
Charlotte Platzer-Björkman,
Bjørn C. Hauback,
Smagul Zh. Karazhanov
Abstract:
In this work we have synthesised thin films of MgyNi1-y(Hx) metal and metal hydride with y between 0 and 1. The films are deposited by magnetron co-sputtering of metallic targets of Mg and Ni. Metallic MgyNi1-y films were deposited with pure Ar plasma while MgyNi1-yHx hydride films were deposited reactively with 30% H2 in the Ar plasma. The depositions were done with a fixed substrate carrier, pro…
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In this work we have synthesised thin films of MgyNi1-y(Hx) metal and metal hydride with y between 0 and 1. The films are deposited by magnetron co-sputtering of metallic targets of Mg and Ni. Metallic MgyNi1-y films were deposited with pure Ar plasma while MgyNi1-yHx hydride films were deposited reactively with 30% H2 in the Ar plasma. The depositions were done with a fixed substrate carrier, producing films with a spatial gradient in the Mg and Ni composition. The combinatorial method of co-sputtering gives an insight into the phase diagram of MgyNi1-y and MgyNi1-yHx, and allows us to investigate structural, optical and electrical properties of the resulting alloys. Our results show that reactive sputtering gives direct deposition of metal hydride films, with high purity in the case of Mg~2NiH~4. We have observed limited oxidation after several months of exposure to ambient conditions. MgyNi1-y and MgyNi1-yHx films might be applied for optical control in smart windows, optical sensors and as a semiconducting material for photovoltaic solar cells.
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Submitted 29 February, 2012;
originally announced February 2012.
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Size distributions of chemically synthesized Ag nanocrystals
Authors:
Annett Thøgersen,
Jack Bonsak,
Carl Huseby Fosli,
Georg Muntingh
Abstract:
Silver nanocrystals made by a chemical reduction of silver salts (AgNO$_3$) by sodium borohydride (NaBH$_4$) were studied using Transmission Electron Microscopy (TEM) and light scattering simulations. For various AgNO$_3$/NaBH$_4$ molar ratios, the size distributions of the nanocrystals were found to be approximately log-normal. In addition, a linear relation was found between the mean nanocrystal…
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Silver nanocrystals made by a chemical reduction of silver salts (AgNO$_3$) by sodium borohydride (NaBH$_4$) were studied using Transmission Electron Microscopy (TEM) and light scattering simulations. For various AgNO$_3$/NaBH$_4$ molar ratios, the size distributions of the nanocrystals were found to be approximately log-normal. In addition, a linear relation was found between the mean nanocrystal size and the molar ratio. In order to relate the size distribution of Ag nanocrystals of the various molar ratios to the scattering properties of Ag nanocrystals in solar cell devices, light scattering simulations of Ag nanocrystals in Si, SiO$_2$, SiN, and Al$_2$O$_3$ matrices were carried out using Mie Plot. These light scattering spectra for the individual nanocrystal sizes were combined into light scattering spectra for the fitted size distributions. The evolution of these scattering spectra with respect to an increasing mean nanocrystal size was then studied. From these findings, it is possible to find the molar ratio for which the corresponding nanocrystal size distribution has maximum scattering at a particular wavelength in the desired matrix.
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Submitted 21 February, 2012;
originally announced February 2012.
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A Comparison between 1.5$μ$m Photoluminescence from Er-Doped Si-Rich Sio2 Films and (Er,Ge) Co-Doped Sio2 Films
Authors:
J. Mayandi,
T. G. Finstad,
C. L. Heng,
Y. J. Li,
A. Thogersen.,
S. Foss,
H. Klette
Abstract:
We have studied the 1.5 $μ$m photoluminescence (PL) from Er ions after annealing two different sample sets in the temperature range 500 °C to 1100 °C. The different sample sets were made by magnetron sputtering from composite targets of Si+SiO2+Er and Ge+SiO2+Er respectively for the different sample sets. The annealing induces Si - and Ge-nanoclusters respectively in the different film s…
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We have studied the 1.5 $μ$m photoluminescence (PL) from Er ions after annealing two different sample sets in the temperature range 500 °C to 1100 °C. The different sample sets were made by magnetron sputtering from composite targets of Si+SiO2+Er and Ge+SiO2+Er respectively for the different sample sets. The annealing induces Si - and Ge-nanoclusters respectively in the different film sets. The PL peak reaches its maximum intensity after annealing at 700 °C for samples with Ge nanoclusters and after annealing at 800 °C for samples with Si. No luminescence from nanoclusters was detected in neither sample sets. This is interpreted as an energy transfer from the nanocluster to Er atoms. Transmission electron microscopy shows that after annealing to the respective temperature yielding the maximum PL intensity both the Ge and Si clusters are non-crystalline. Here we mainly compare the spectral shape of Er luminescence emitted in these different nanostructured matrixes. The PL spectral shapes are clearly different and witness a different local environment for the Er ions.
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Submitted 10 August, 2007;
originally announced August 2007.
