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Current-induced two-level fluctuations in pseudo spin-valves (Co/Cu/Co) nanostructures
Authors:
A. Fabian,
C. Terrier,
S. Serrano Guisan,
X. Hoffer,
M. Dubey,
L. Gravier,
J. -Ph. Ansermet,
J. -E. Wegrowe
Abstract:
Two-level fluctuations of the magnetization state of pseudo spin-valve pillars Co(10 nm)/Cu(10 nm)/Co(30 nm) embedded in electrodeposited nanowires (~40 nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 10^7 A/cm^2 at room temperature. The statistical properties of the residence times in the parallel and antiparallel magnetization states reveal two effects with quali…
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Two-level fluctuations of the magnetization state of pseudo spin-valve pillars Co(10 nm)/Cu(10 nm)/Co(30 nm) embedded in electrodeposited nanowires (~40 nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 10^7 A/cm^2 at room temperature. The statistical properties of the residence times in the parallel and antiparallel magnetization states reveal two effects with qualitatively different dependences on current intensity. The current appears to have the effect of a field determined as the bias field required to equalize these times. The bias field changes sign when the current polarity is reversed. At this field, the effect of a current density of 10^7 A/cm^2 is to lower the mean time for switching down to the microsecond range. This effect is independent of the sign of the current and is interpreted in terms of an effective temperature for the magnetization.
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Submitted 11 November, 2003; v1 submitted 8 April, 2003;
originally announced April 2003.
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The Amplitude of Non-Equilibrium Quantum Interference in Metallic Mesoscopic Systems
Authors:
C. Terrier,
D. Babic,
C. Strunk,
T. Nussbaumer,
C. Schoenenberger
Abstract:
We study the influence of a DC bias voltage V on quantum interference corrections to the measured differential conductance in metallic mesoscopic wires and rings. The amplitude of both universal conductance fluctuations (UCF) and Aharonov-Bohm effect (ABE) is enhanced several times for voltages larger than the Thouless energy. The enhancement persists even in the presence of inelastic electron-e…
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We study the influence of a DC bias voltage V on quantum interference corrections to the measured differential conductance in metallic mesoscopic wires and rings. The amplitude of both universal conductance fluctuations (UCF) and Aharonov-Bohm effect (ABE) is enhanced several times for voltages larger than the Thouless energy. The enhancement persists even in the presence of inelastic electron-electron scattering up to V ~ 1 mV. For larger voltages electron-phonon collisions lead to the amplitude decaying as a power law for the UCF and exponentially for the ABE. We obtain good agreement of the experimental data with a model which takes into account the decrease of the electron phase-coherence length due to electron-electron and electron-phonon scattering.
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Submitted 9 May, 2002; v1 submitted 23 March, 2001;
originally announced March 2001.
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Amplitude of Aharonov-Bohm oscillations in mesoscopic metallic rings as a function of the DC bias voltage
Authors:
C. Terrier,
C. Strunk,
T. Nussbaumer,
D. Babic,
C. Schonenberger
Abstract:
We report measurements of the amplitude of the Aharonov-Bohm oscillations in a mesoscopic diffusive gold ring as a function of the DC bias voltage V. The amplitude of the h/e oscillations increases with V once the Thouless energy Ec and thermal energy are exceeded, and decreases at higher values of V. The increase of the amplitude is interpreted in terms of a superposition of the statistically i…
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We report measurements of the amplitude of the Aharonov-Bohm oscillations in a mesoscopic diffusive gold ring as a function of the DC bias voltage V. The amplitude of the h/e oscillations increases with V once the Thouless energy Ec and thermal energy are exceeded, and decreases at higher values of V. The increase of the amplitude is interpreted in terms of a superposition of the statistically independent contributions of eV/Ec energy intervals, whereas its decrease at high V could be attributed to enhanced inelastic scattering processes.
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Submitted 25 February, 2000; v1 submitted 21 February, 2000;
originally announced February 2000.