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Quantized Conductance by Accelerated Electrons
Authors:
Daiju Terasawa
Abstract:
One-dimensional quantized conductance is derived from the electrons in a homogeneous electric field by calculating the traveling time of the accelerated motion and the number of electrons in the one-dimensional region. As a result, the quantized conductance is attributed to the finite time required for ballistic electrons to travel a finite length. In addition, even if the conductance is finite, i…
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One-dimensional quantized conductance is derived from the electrons in a homogeneous electric field by calculating the traveling time of the accelerated motion and the number of electrons in the one-dimensional region. As a result, the quantized conductance is attributed to the finite time required for ballistic electrons to travel a finite length. In addition, even if the conductance is finite, it is possible to say that this model requires no Joule heat dissipation, because the electrical power is converted to kinetic energy of electrons. Furthermore, the relationship between the non-equilibrium source-drain bias $V_\mathrm{sd}$ and the wavenumber $k$ in a one-dimensional conductor is shown as $k \propto \sqrt{V_\mathrm{sd}}$. This correspondence explains the wavelength of the coherent electron flows emitted from a quantum point contact. It also explains the anomalous $0.7 \cdot 2e^2/h$ ($e$ is the elementary charge, and $h$ is the Plank's constant) conductance plateau as a consequence of the perturbation gap at the crossing point of the wavenumber-direction-splitting dispersion relation. We propose that this splitting is caused by the Rashba spin-orbit interaction induced by the potential gradient of the quantum well at quantum point contacts.
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Submitted 24 December, 2024; v1 submitted 30 June, 2023;
originally announced June 2023.
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Large Zeeman Splitting in Out-of-Plane Magnetic Field in a Double-Layer Quantum Point Contact
Authors:
D. Terasawa,
S. Norimoto,
T. Arakawa,
M. Ferrier,
A. Fukuda,
K. Kobayashi,
Y. Hirayama
Abstract:
In this study, we observe that the conductance of a quantum point contact on a GaAs/AlGaAs double quantum well depends significantly on the magnetic field perpendicular to the two-dimensional electron gas. In the presence of the magnetic field, the subband edge splitting due to the Zeeman energy reaches 0.09 meV at 0.16 T, thereby suggesting an enhanced g-factor. The estimated g-factor enhancement…
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In this study, we observe that the conductance of a quantum point contact on a GaAs/AlGaAs double quantum well depends significantly on the magnetic field perpendicular to the two-dimensional electron gas. In the presence of the magnetic field, the subband edge splitting due to the Zeeman energy reaches 0.09 meV at 0.16 T, thereby suggesting an enhanced g-factor. The estimated g-factor enhancement is 17.5 times that of the bare value. It is considered that a low electron density and high mobility makes it possible to reach a strong many-body interaction regime in which this type of strong enhancement in g-factor can be observed.
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Submitted 26 January, 2021;
originally announced January 2021.
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Conductance quantization and shot noise of a double-layer quantum point contact
Authors:
D. Terasawa,
S. Norimoto,
T. Arakawa,
M. Ferrier,
A. Fukuda,
K. Kobayashi,
Y. Hirayama
Abstract:
The conductance quantization and shot noise below the first conductance plateau $G_0 = 2e^2/h$ are measured in a quantum point contact fabricated in a GaAs/AlGaAs tunnel-coupled double quantum well. From the conductance measurement, we observe a clear quantized conductance plateau at $0.5G_0$ and a small minimum in the transconductance at $0.7 G_0$. Spectroscopic transconductance measurement revea…
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The conductance quantization and shot noise below the first conductance plateau $G_0 = 2e^2/h$ are measured in a quantum point contact fabricated in a GaAs/AlGaAs tunnel-coupled double quantum well. From the conductance measurement, we observe a clear quantized conductance plateau at $0.5G_0$ and a small minimum in the transconductance at $0.7 G_0$. Spectroscopic transconductance measurement reveals three maxima inside the first diamond, thus suggesting three minima in the dispersion relation for electric subbands. Shot noise measurement shows that the Fano factor behavior is consistent with this observation. We propose a model that relates these features to a wavenumber directional split subband due to a strong Rashba spin--orbit interaction that is induced by the center barrier potential gradient of the double-layer sample.
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Submitted 23 March, 2020; v1 submitted 13 February, 2020;
originally announced February 2020.
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Temperature dependence of universal conductance fluctuation due to development of weak localization in graphene
Authors:
D. Terasawa,
A. Fukuda,
A. Fujimoto,
Y. Ohno,
K. Matsumoto
Abstract:
The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this behavior can be attributed to the decrease in the inelastic scattering (dephasing) rate, which enhances the weak localization (WL) correction to resistivity. Followi…
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The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this behavior can be attributed to the decrease in the inelastic scattering (dephasing) rate, which enhances the weak localization (WL) correction to resistivity. Following a previous report that explained the relationship between the universal conductance fluctuation (UCF) and WL regarding the gate voltage dependence (D. Terasawa, et al., Phys. Rev. B 95 125427 (2017)), we propose that the temperature dependence of the UCF in monolayer graphene can be interpreted by the WL theory.
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Submitted 6 September, 2017; v1 submitted 1 September, 2017;
originally announced September 2017.
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Relationship between conductance fluctuation and weak localization in graphene
Authors:
D. Terasawa,
A. Fukuda,
A. Fujimoto,
Y. Ohno,
Y. Kanai,
K. Matsumoto
Abstract:
The relationship between the universal conductance fluctuation and the weak localization effect in monolayer graphene is investigated. By comparing experimental results with the predictions of the weak localization theory for graphene, we find that the ratio of the elastic intervalley scattering time to the inelastic dephasing time varies in accordance with the conductance fluctuation; this is a c…
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The relationship between the universal conductance fluctuation and the weak localization effect in monolayer graphene is investigated. By comparing experimental results with the predictions of the weak localization theory for graphene, we find that the ratio of the elastic intervalley scattering time to the inelastic dephasing time varies in accordance with the conductance fluctuation; this is a clear evidence connecting the universal conductance fluctuation with the weak localization effect. We also find a series of scattering lengths that are related to the phase shifts caused by magnetic flux by Fourier analysis.
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Submitted 21 March, 2017;
originally announced March 2017.
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Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization
Authors:
Shibun Tsuda,
Minh-Hai Nguyen,
Daiju Terasawa,
Akira Fukuda,
Anju Sawada
Abstract:
We investigate the resistance enhancement state (RES) where the magnetoresistance of the $ν= 2/3$ fractional quantum Hall state (FQHS) is increased with dynamic nuclear spin polarization (DNP) induced by a large electric current. After inducing DNP, we measure the temperature dependence of the magnetoresistance by a small current over a short period of time. We find that the FQHS makes a phase tra…
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We investigate the resistance enhancement state (RES) where the magnetoresistance of the $ν= 2/3$ fractional quantum Hall state (FQHS) is increased with dynamic nuclear spin polarization (DNP) induced by a large electric current. After inducing DNP, we measure the temperature dependence of the magnetoresistance by a small current over a short period of time. We find that the FQHS makes a phase transition to an insulating state. By measuring the Hall resistance in the insulating state, we find that the RES exhibits a quantized Hall resistance. We discuss the RES in association with the Anderson localization.
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Submitted 2 October, 2013;
originally announced October 2013.
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Interlayer Diffusion of Nuclear Spin Polarization in $ν=2/3$ Quantum Hall States
Authors:
Minh-Hai Nguyen,
Shibun Tsuda,
Daiju Terasawa,
Akira Fukuda,
Yangdong Zheng,
Anju Sawada
Abstract:
At the spin transition point of $ν=2/3$ quantum Hall states, nuclear spins in a two-dimensional electron gas are polarized by an electric current. Using GaAs/AlGaAs double-quantum-well samples, we first observed the spatial diffusion of nuclear spin polarization between the two layers when the nuclear spin polarization is current-induced in one layer. By numerical simulation, we estimated the diff…
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At the spin transition point of $ν=2/3$ quantum Hall states, nuclear spins in a two-dimensional electron gas are polarized by an electric current. Using GaAs/AlGaAs double-quantum-well samples, we first observed the spatial diffusion of nuclear spin polarization between the two layers when the nuclear spin polarization is current-induced in one layer. By numerical simulation, we estimated the diffusion constant of the nuclear spin polarization to be $15 \pm 7$\,nm$^2$/s.
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Submitted 20 September, 2013;
originally announced September 2013.
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Pseudospin Soliton in the $ν=1$ Bilayer Quantum Hall State
Authors:
A. Fukuda,
D. Terasawa,
M. Morino,
K. Iwata,
S. Kozumi,
N. Kumada,
Y. Hirayama,
Z. F. Ezawa,
A. Sawada
Abstract:
We investigate a domain structure of pseudospins, a soliton lattice in the bilayer quantum Hall state at total Landau level filling factor $ν=1$, in a tilted magnetic field, where the pseudospin represents the layer degree of freedom. An anomalous peak in the magnetoresistance $R_{xx}$ appears at the transition point between the commensurate and incommensurate phases. The $R_{xx}$ at the peak is…
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We investigate a domain structure of pseudospins, a soliton lattice in the bilayer quantum Hall state at total Landau level filling factor $ν=1$, in a tilted magnetic field, where the pseudospin represents the layer degree of freedom. An anomalous peak in the magnetoresistance $R_{xx}$ appears at the transition point between the commensurate and incommensurate phases. The $R_{xx}$ at the peak is highly anisotropic for the angle between the in-plain magnetic field $B_\parallel $ and the current, and indicates a formation of the soliton lattice aligned parallel to $B_\parallel $. Temperature dependence of the $R_{xx}$ peak reveals that the dissipation is caused by thermal fluctuations of pseudospin solitons. We construct a phase diagram of the bilayer $ν=1$ system as a function of $B_\parallel$ and the total electron density. We also study effects of density imbalance between the two layers.
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Submitted 8 November, 2007;
originally announced November 2007.
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Magnetotransport Study of the Canted Antiferromagnetic Phase in Bilayer $ν=2$ Quantum Hall State
Authors:
A. Fukuda,
A. Sawada,
S. Kozumi,
D. Terasawa,
Y. Shimoda,
Z. F. Ezawa,
N. Kumada,
Y. Hirayama
Abstract:
Magnetotransport properties are investigated in the bilayer quantum Hall state at the total filling factor $ν=2$. We measured the activation energy elaborately as a function of the total electron density and the density difference between the two layers. Our experimental data demonstrate clearly the emergence of the canted antiferromagnetic (CAF) phase between the ferromagnetic phase and the spi…
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Magnetotransport properties are investigated in the bilayer quantum Hall state at the total filling factor $ν=2$. We measured the activation energy elaborately as a function of the total electron density and the density difference between the two layers. Our experimental data demonstrate clearly the emergence of the canted antiferromagnetic (CAF) phase between the ferromagnetic phase and the spin-singlet phase. The stability of the CAF phase is discussed by the comparison between experimental results and theoretical calculations using a Hartree-Fock approximation and an exact diagonalization study. The data reveal also an intrinsic structure of the CAF phase divided into two regions according to the dominancy between the intralayer and interlayer correlations.
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Submitted 29 January, 2006;
originally announced January 2006.
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Simultaneous Excitation of Spins and Pseudospins in the Bilayer $ν=1$ Quantum Hall State
Authors:
D. Terasawa,
M. Morino,
K. Nakada,
S. Kozumi,
A. Sawada,
Z. F. Ezawa,
N. Kumada,
K. Muraki,
Y. Hirayama,
T. Saku
Abstract:
The tilting angular dependence of the energy gap was measured in the bilayer quantum Hall state at the Landau level filling $ν=1$ by changing the density imbalance between the two layers. The observed gap behavior shows a continuous transformation from the bilayer balanced density state to the monolayer state. Even a sample with 33 K tunneling gap shows the same activation energy anomaly reporte…
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The tilting angular dependence of the energy gap was measured in the bilayer quantum Hall state at the Landau level filling $ν=1$ by changing the density imbalance between the two layers. The observed gap behavior shows a continuous transformation from the bilayer balanced density state to the monolayer state. Even a sample with 33 K tunneling gap shows the same activation energy anomaly reported by Murphy {\it et al.}. We discuss a possible relation between our experimental results and the quantum Hall ferromagnet of spins and pseudospins.
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Submitted 19 March, 2004;
originally announced March 2004.
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Phase Transitions in the Bilayer $ν=2/3$ Quantum Hall Effect
Authors:
N. Kumada,
D. Terasawa,
Y. Shimoda,
H. Azuhata,
A. Sawada,
Z. F. Ezawa,
K. Muraki,
T. Saku,
Y. Hirayama
Abstract:
We measured the magnetoresistance of bilayer quantum Hall (QH) effects at the fractional filling factor $ν=2/3$ by changing the total electron density and the density difference between two layers. Three different QH states were separated by two types of phase transition: One is the spin transition and the other is the pseudospin transition. In addition, two different hystereses were detected, o…
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We measured the magnetoresistance of bilayer quantum Hall (QH) effects at the fractional filling factor $ν=2/3$ by changing the total electron density and the density difference between two layers. Three different QH states were separated by two types of phase transition: One is the spin transition and the other is the pseudospin transition. In addition, two different hystereses were detected, one of which is specific to bilayer systems. The phase transitions and the hystereses are described well by a composite fermion model extended to a bilayer system.
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Submitted 23 December, 2001;
originally announced December 2001.