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Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
Authors:
Hisato Yamaguchi,
Shuichi Ogawa,
Daiki Watanabe,
Hideaki Hozumi,
Yongqian Gao,
Goki Eda,
Cecilia Mattevi,
Takeshi Fujita,
Akitaka Yoshigoe,
Shinji Ishizuka,
Lyudmyla Adamska,
Takatoshi Yamada,
Andrew M. Dattelbaum,
Gautam Gupta,
Stephen K. Doorn,
Kirill A. Velizhanin,
Yuden Teraoka,
Mingwei Chen,
Han Htoon,
Manish Chhowalla,
Aditya D. Mohite,
Yuji Takakuwa
Abstract:
We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC.…
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We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.
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Submitted 3 May, 2016;
originally announced May 2016.
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Epitaxial Graphene on Silicon toward Graphene-Silicon Fusion Electronics
Authors:
Hirokazu Fukidome,
Ryota Takahashi,
Yu Miyamoto,
Hiroyuki Handa,
Hyun-Chul Kang,
Hiromi Karasawa,
Tetsuya Suemitsu,
Taiichi Otsuji,
Akitaka Yoshigoe,
Yuden Teraoka,
Maki Suemitsu
Abstract:
Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene on SiC substrates by thermal decomposition of surface layers has proved itself quite satisfactory both in quality and in process reliability. Even modulation…
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Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene on SiC substrates by thermal decomposition of surface layers has proved itself quite satisfactory both in quality and in process reliability. Even modulation of structural and hence electronic properties of graphene is possible by tuning the graphene/SiC interface structure. The challenges for this graphene-on-SiC technology, however, are the abdication of the well-established Si technologies and the high production cost of the SiC bulk crystals. Here, we demonstrate that formation of epitaxial graphene on silicon substrate is possible, by graphitizing epitaxial SiC thin films formed on silicon substrates. This graphene-on-silicon (GOS) method enables us to form a large-area film of well-ordered sp2 carbon networks on Si substrates and to fabricate electronic devices based on the structure.
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Submitted 27 January, 2010;
originally announced January 2010.
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An oxide thermal rectifier
Authors:
W. Kobayashi,
Y. Teraoka,
I. Terasaki
Abstract:
We have experimentally demonstrated thermal rectification as bulk effect. According to a theoretical design of a thermal rectifier, we have prepared an oxide thermal rectifier made of two cobalt oxides with different thermal conductivities, and have made an experimental system to detect the thermal rectification. The rectifying coefficient of the device is found to be 1.43, which is in good agre…
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We have experimentally demonstrated thermal rectification as bulk effect. According to a theoretical design of a thermal rectifier, we have prepared an oxide thermal rectifier made of two cobalt oxides with different thermal conductivities, and have made an experimental system to detect the thermal rectification. The rectifying coefficient of the device is found to be 1.43, which is in good agreement with the numerical calculation.
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Submitted 6 October, 2009;
originally announced October 2009.
