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Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
Authors:
Wei Pan,
D. Bruce Burckel,
Catalin D. Spataru,
Keshab R. Sapkota,
Aaron J. Muhowski,
Samuel D. Hawkins,
John F. Klem,
Layla S. Smith,
Doyle A. Temple,
Zachery A. Enderson,
Zhigang Jiang,
Komalavalli Thirunavukkuarasu,
Li Xiang,
Mykhaylo Ozerov,
Dmitry Smirnov,
Chang Niu,
Peide D. Ye,
Praveen Pai,
Fan Zhang
Abstract:
Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproduc…
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Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography defined semiconductor moires superlattices, in which three fundamental parameters, electron-electron interaction, spin-orbit coupling, and band topology, are designable. We experimentally investigate quantum transport properties in a moire specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum information and microelectronics technologies.
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Submitted 6 June, 2025;
originally announced June 2025.
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Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
Authors:
W. Pan,
K. R. Sapkota,
P. Lu,
A. J. Muhowski,
W. M. Martinez,
C. L. H. Sovinec,
R. Reyna,
J. P. Mendez,
D. Mamaluy,
S. D. Hawkins,
J. F. Klem,
L. S. L. Smith,
D. A. Temple,
Z. Enderson,
Z. Jiang,
E. Rossi
Abstract:
In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero $^o$C. A sharp superconducting transition at $T \sim 1.3$ K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/…
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In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero $^o$C. A sharp superconducting transition at $T \sim 1.3$ K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility $μ\sim 1.0 \times 10^6$ cm$^2$/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.
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Submitted 17 April, 2025; v1 submitted 8 October, 2024;
originally announced October 2024.
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High Efficiency Thin Film Superlattice Thermoelectric Cooler Modules Enabled by Low Resistivity Contacts
Authors:
Yuping He,
François Léonard,
Douglas L. Medlin,
Nicholas Baldasaro,
Dorota S. Temple,
Philip Barletta,
Catalin D. Spataru
Abstract:
V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in realizing a low resistivity contacts is the absence of fundamental knowledge of the physical and chemical properties of interfaces between metal and V-tellurid…
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V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in realizing a low resistivity contacts is the absence of fundamental knowledge of the physical and chemical properties of interfaces between metal and V-telluride materials. Here we present a combination of experimental and theoretical efforts to understand, design and harness low resistivity contacts to V-tellurides. Ab initio calculations are used to explore the effects of interfacial structure and chemical compositions on the electrical contacts, and an ab initio based macroscopic model is employed to predict the fundamental limit of contact resistivity as a function of both carrier concentration and temperature. Under the guidance of theoretical studies, we develop an experimental approach to fabricate low resistivity metal contacts to V-telluride thin film superlattices, achieving a 100-fold reduction compared to previous work. Interfacial characterization and analysis using both scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy show the unusual interfacial morphology and the potential for further improvement in contact resistivity. Finally, we harness the improved contacts to realize an improved high-performance thermoelectric cooling module.
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Submitted 22 November, 2017;
originally announced November 2017.
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Role of heterostructures and multiple magnetic phases in the low-field magnetization of Fe-Cr GMR multilayers
Authors:
R. S. Patel,
A. K. Majumdar,
A. K. Nigam,
D. Temple,
C. Pace
Abstract:
Zero-field-cooled (ZFC) and field-cooled (FC) magnetization along with ac-magnetization vs. temperature and m-h loop measurements are reported for two series of ion-beam sputtered Fe-Cr GMR multilayers where the interface roughness is different. The exchange coupling between the Fe layers varies from ferromagnetic (FC) to antiferromagnetic (AF) depending upon the Cr layer thickness. The ZFC and…
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Zero-field-cooled (ZFC) and field-cooled (FC) magnetization along with ac-magnetization vs. temperature and m-h loop measurements are reported for two series of ion-beam sputtered Fe-Cr GMR multilayers where the interface roughness is different. The exchange coupling between the Fe layers varies from ferromagnetic (FC) to antiferromagnetic (AF) depending upon the Cr layer thickness. The ZFC and FC magnetization data follow different curves below an irreversible temperature ($T_{irr}$). The FC data shows a $T^{3/2}$ thermal demagnetization behavior at lower temperatures with very small spin-wave stiffness constant (as compared with that of bulk Fe obtained from Bloch's $T^{3/2}$ law) but it goes as 1/T at higher temperatures (above ($T_{irr}$)). This behavior is interpreted in terms of the coexistence of spin-glass (SG)/superparamagnetic, FM and AF phases. ac-magnetization vs. temperature shows a peak at $T_g$. This peak shifts towards higher temperatures and its amplitude decreases with increasing frequency of the driving ac field.
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Submitted 12 April, 2005;
originally announced April 2005.
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Coexistence of glassy antiferromagnetism and giant magnetoresistance (GMR) in Fe/Cr multilayer structures
Authors:
N. Theodoropoulou,
A. F. Hebard,
M. Gabay,
A. K. Majumdar,
C. Pace,
J. Lannon,
D. Temple
Abstract:
Using temperature-dependent magnetoresistance and magnetization measurements on Fe/Cr multilayers that exhibit pronounced giant magnetoresistance (GMR), we have found evidence for the presence of a glassy antiferromagnetic (GAF) phase. This phase reflects the influence of interlayer exchange coupling (IEC) at low temperature (T < 140K) and is characterized by a field-independent glassy transitio…
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Using temperature-dependent magnetoresistance and magnetization measurements on Fe/Cr multilayers that exhibit pronounced giant magnetoresistance (GMR), we have found evidence for the presence of a glassy antiferromagnetic (GAF) phase. This phase reflects the influence of interlayer exchange coupling (IEC) at low temperature (T < 140K) and is characterized by a field-independent glassy transition temperature, Tg, together with irreversible behavior having logarithmic time dependence below a "de Almeida and Thouless" (AT) critical field line. At room temperature, where the GMR effect is still robust, IEC plays only a minor role, and it is the random potential variations acting on the magnetic domains that are responsible for the antiparallel interlayer domain alignment.
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Submitted 6 May, 2002;
originally announced May 2002.
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Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers
Authors:
A. K. Majumdar,
A. F. Hebard,
Avinash Singh,
D. Temple
Abstract:
The temperature dependence of the electrical resistivity and magnetoresistance of Xe-ion beam sputtered Fe-Cr multilayers has been investigated. The electrical resistivity between 5 and 300 K in the fully ferromagnetic state, obtained by applying a field beyond the saturation field (H_sat) necessary for the antiferromagnetic(AF)-ferromagnetic(FM) field-induced transition, shows evidence of spin-…
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The temperature dependence of the electrical resistivity and magnetoresistance of Xe-ion beam sputtered Fe-Cr multilayers has been investigated. The electrical resistivity between 5 and 300 K in the fully ferromagnetic state, obtained by applying a field beyond the saturation field (H_sat) necessary for the antiferromagnetic(AF)-ferromagnetic(FM) field-induced transition, shows evidence of spin-disorder resistivity as in crystalline Fe and an s-d scattering contribution (as in 3d metals and alloys). The sublattice magnetization m(T) in these multilayers has been calculated in terms of the planar and interlayer exchange energies. The additional spin-dependent scattering Δρ(T) = ρ(T,H=0)_AF - ρ(T,H=H_sat)_FM in the AF state over a wide range of temperature is found to be proportional to the sublattice magnetization, both Δρ(T) and m(T) reducing along with the antiferromagnetic fraction. At intermediate fields, the spin-dependent part of the electrical resistivity (ρ_s (T)) fits well to the power law ρ_s (T) = b - cT^αwhere c is a constant and b and αare functions of H. At low fields α\approx 2 and the intercept b decreases with H much the same way as the decrease of Δρ(T) with T. A phase diagram (T vs. H_sat) is obtained for the field- induced AF to FM transition. Comparisons are made between the present investigation and similar studies using dc magnetron sputtered and molecular beam epitaxy (MBE) grown Fe-Cr multilayers.
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Submitted 6 November, 2001;
originally announced November 2001.
