-
Impact of Valence States on Superconductivity of Oxygen Incorporated Iron Telluride and Iron Selenide Films
Authors:
D. Telesca,
Y. Nie,
J. I. Budnick,
B. O. Wells,
B. Sinkovic
Abstract:
We report on the local electronic structure of oxygen incorporated FeTe and FeSe films and how this relates to superconductivity observed in these films. In the case of FeTe, intially grown films are measured to be non-superconducting, but become superconducting following oxygen incorporation. In FeSe the opposite happens, initially grown films are measured to be superconducting, but experience a…
▽ More
We report on the local electronic structure of oxygen incorporated FeTe and FeSe films and how this relates to superconductivity observed in these films. In the case of FeTe, intially grown films are measured to be non-superconducting, but become superconducting following oxygen incorporation. In FeSe the opposite happens, initially grown films are measured to be superconducting, but experience a quenching of superconductivity following oxygen incorporation. Total Fluorescence Yield (TFY) X-ray absorption experiments show that oxygen incorporation changes the initial Fe valence state in both the initially grown FeTe and FeSe films to mainly Fe3+ in the oxygen incorporated films. In contrast we observe that while Te moves to a mixed Te0/Te4+ valence state, the Se always remains Se0. This work highlights how different responses of the electronic structure by the respective chalcogenides to oxidation could be related to the mechanisms which are inducing superconductivity in FeTe and quenching superconductivity in FeSe.
△ Less
Submitted 10 February, 2011;
originally announced February 2011.
-
Reconfigurable nanoelectronics using graphene based spintronic logic gates
Authors:
Hanan Dery,
Hui Wu,
Berkehan Ciftcioglu,
Michael Huang,
Yang Song,
Roland Kawakami,
Jing Shi,
Ilya Krivorotov,
Donald A. Telesca,
Igor Zutic,
Lu J. Sham
Abstract:
This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet material system. We use network search engines as a technology demonstration vehicle and present a spin-based circuit design with smaller area, faster speed, and l…
▽ More
This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet material system. We use network search engines as a technology demonstration vehicle and present a spin-based circuit design with smaller area, faster speed, and lower energy consumption than the state-of-the-art CMOS counterparts. This design can also be applied in applications such as data compression, coding and image recognition. In the proposed scheme, over 100 spin-based logic operations are carried out before any need for a spin-charge conversion. Consequently, supporting CMOS electronics requires little power consumption. The spintronic-CMOS integrated system can be implemented on a single 3-D chip. These nonvolatile logic circuits hold potential for a paradigm shift in computing applications.
△ Less
Submitted 15 July, 2011; v1 submitted 7 January, 2011;
originally announced January 2011.
-
Superconductivity Induced in Iron Telluride Films by Low Temperature Oxygen Incorporation
Authors:
Yuefeng Nie,
Donald Telesca,
Joseph I. Budnick,
Boris Sinkovic,
Barrett O. Wells
Abstract:
We report superconductivity induced in films of the non-superconducting, antiferromagnetic parent material FeTe by low temperature oxygen incorporation in a reversible manner. X-ray absorption shows that oxygen doping changes the nominal Fe valence state from 2+ in the non-superconducting state to mainly 3+ in the superconducting state. Thus superconductivity in O doped FeTe occurs in a quite diff…
▽ More
We report superconductivity induced in films of the non-superconducting, antiferromagnetic parent material FeTe by low temperature oxygen incorporation in a reversible manner. X-ray absorption shows that oxygen doping changes the nominal Fe valence state from 2+ in the non-superconducting state to mainly 3+ in the superconducting state. Thus superconductivity in O doped FeTe occurs in a quite different charge and strain state than the more common FeTe$_{1-x}$Se$_x$. This work also suggests a convenient path for conducting doping experiments in-situ with many measurement techniques.
△ Less
Submitted 16 March, 2010; v1 submitted 22 December, 2009;
originally announced December 2009.
