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A practical route to donor binding energies: The DFT-1/2 method for shallow defects
Authors:
Joshua Claes,
Bart Partoens,
Dirk Lamoen,
Marcelo Marques,
Lara K. Teles
Abstract:
Accurately calculating the binding energies of shallow defects requires large supercells to capture the extended nature of their wavefunctions. This makes many beyond-DFT methods, such as hybrid functionals, impractical for direct calculations, often requiring indirect or approximate approaches. However, standard DFT alone fails to provide reliable results due to the well-known band gap underestim…
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Accurately calculating the binding energies of shallow defects requires large supercells to capture the extended nature of their wavefunctions. This makes many beyond-DFT methods, such as hybrid functionals, impractical for direct calculations, often requiring indirect or approximate approaches. However, standard DFT alone fails to provide reliable results due to the well-known band gap underestimation and delocalization errors. In this work, we employ the DFT-1/2 method to address these deficiencies while maintaining computational efficiency allowing us to reach supercells of up to 4096 atoms. We develop a practical procedure for applying DFT-1/2 to shallow defects and demonstrate its effectiveness for group V donors in silicon (P, As, Sb, Bi). By using an extrapolation scheme to infinite supercell size, we obtain accurate binding energies with minimal computational overhead. This approach offers a simple and direct method for calculating donor binding energies.
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Submitted 20 August, 2025;
originally announced August 2025.
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Tight-binding model of Pt-based jacutingaites as combination of the honeycomb and kagome lattices
Authors:
G. Santos-Castro,
L. K. Teles,
I. Guilhon Mitoso,
J. M. Pereira Jr
Abstract:
We introduce a refined tight-binding (TB) model for Pt-based jacutingaite materials Pt$_{2}N$X$_{3}$, ($N$ = Zn, Cd, Hg; X = S, Se, Te), offering a detailed representation of the low-energy physics of its monolayers. This model incorporates all elements with significant spin-orbit coupling contributions, which are essential for understanding the topological energy gaps in these materials. Through…
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We introduce a refined tight-binding (TB) model for Pt-based jacutingaite materials Pt$_{2}N$X$_{3}$, ($N$ = Zn, Cd, Hg; X = S, Se, Te), offering a detailed representation of the low-energy physics of its monolayers. This model incorporates all elements with significant spin-orbit coupling contributions, which are essential for understanding the topological energy gaps in these materials. Through comparison with first-principles calculations, we meticulously fitted the TB parameters, ensuring an accurate depiction of the energy bands near the Fermi level. Our model reveals the intricate interplay between the Pt $3e$ and $N$ metal orbitals, forming distinct kagome and honeycomb lattice structures. Applying this model, we explore the edge states of Pt-based jacutingaite monolayer nanoribbons, highlighting the sensitivity of the topological edge states dispersion bands to the nanostructures geometric configurations. These insights not only deepen our understanding of jacutingaite materials but also assist in tailoring their electronic properties for future applications.
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Submitted 9 October, 2024;
originally announced October 2024.
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Ab initio modeling of superconducting alloys
Authors:
Pedro N. Ferreira,
Roman Lucrezi,
Ivan Guilhon,
Marcelo Marques,
Lara K. Teles,
Christoph Heil,
Luiz T. F. Eleno
Abstract:
Designing new, technologically relevant superconductors has long been at the forefront of solid-state physics and chemistry research. However, developing efficient approaches for modeling the thermodynamics of superconducting alloys while accurately evaluating their physical properties has proven to be a very challenging task. To fill this gap, we propose an ab initio thermodynamic statistical met…
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Designing new, technologically relevant superconductors has long been at the forefront of solid-state physics and chemistry research. However, developing efficient approaches for modeling the thermodynamics of superconducting alloys while accurately evaluating their physical properties has proven to be a very challenging task. To fill this gap, we propose an ab initio thermodynamic statistical method, the Extended Generalized Quasichemical Approximation (EGQCA), to describe off-stoichiometric superconductors. Within EGQCA, one can predict any computationally accessible property of the alloy, such as the critical temperature in superconductors and the electron-phonon coupling parameter, as a function of composition and crystal growth conditions by computing the cluster occurrence probabilities that minimize the overall mixing Gibbs free energy. Importantly, EGQCA incorporates directly chemical ordering, lattice distortions, and vibrational contributions. As a proof of concept, we applied EGQCA to the well-known Al-doped MgB$_2$ and to niobium alloyed with titanium and vanadium, showing a remarkable agreement with the experimental data. Additionally, we model the near-room temperature sodalite-like Y$_{1-x}$Ca$_x$H$_6$ superconducting solid solution, demonstrating that EGQCA particularly possesses a promising potential for designing in silico high-$T_{\text{c}}$ superhydride alloys. Our approach notably enables the high-throughput screening of complex superconducting solid solutions, intrinsically providing valuable insights into the interplay between synthesis, thermodynamics, and physical properties.
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Submitted 26 June, 2024; v1 submitted 21 June, 2024;
originally announced June 2024.
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Moiré excitons in biased twisted bilayer graphene under pressure
Authors:
V. G. M. Duarte,
D. R. da Costa,
N. M. R. Peres,
L. K. Teles,
A. J. Chaves
Abstract:
Using the tight-binding model, we report a gap opening in the energy spectrum of the twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges are located along the K-Gamma path of the superlattice Brillouin Zone, with the bandgap reaching values up to 200 meV in the single-particle picture. Employing…
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Using the tight-binding model, we report a gap opening in the energy spectrum of the twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges are located along the K-Gamma path of the superlattice Brillouin Zone, with the bandgap reaching values up to 200 meV in the single-particle picture. Employing the formalism of the semiconductor Bloch equations, we observe an enhancement of the bandgap due to the electron-electron interaction, with a renormalization of the bandgap of about 160 meV. From the solution of the corresponding Bethe-Salpeter equation, we show that this system supports highly anisotropic bright excitons whose electrons and holes are strongly hybridized between the adjacent layers.
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Submitted 14 October, 2023;
originally announced October 2023.
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Heisenberg's uncertainty principle in the PTOLEMY project: a theory update
Authors:
PTOLEMY Collaboration,
A. Apponi,
M. G. Betti,
M. Borghesi,
A. Boyarsky,
N. Canci,
G. Cavoto,
C. Chang,
V. Cheianov,
Y. Cheipesh,
W. Chung,
A. G. Cocco,
A. P. Colijn,
N. D'Ambrosio,
N. de Groot,
A. Esposito,
M. Faverzani,
A. Ferella,
E. Ferri,
L. Ficcadenti,
T. Frederico,
S. Gariazzo,
F. Gatti,
C. Gentile,
A. Giachero
, et al. (36 additional authors not shown)
Abstract:
We discuss the consequences of the quantum uncertainty on the spectrum of the electron emitted by the $β$-processes of a tritium atom bound to a graphene sheet. We analyze quantitatively the issue recently raised in [Cheipesh et al., Phys. Rev. D 104, 116004 (2021)], and discuss the relevant time scales and the degrees of freedom that can contribute to the intrinsic spread in the electron energy.…
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We discuss the consequences of the quantum uncertainty on the spectrum of the electron emitted by the $β$-processes of a tritium atom bound to a graphene sheet. We analyze quantitatively the issue recently raised in [Cheipesh et al., Phys. Rev. D 104, 116004 (2021)], and discuss the relevant time scales and the degrees of freedom that can contribute to the intrinsic spread in the electron energy. We perform careful calculations of the potential between tritium and graphene with different coverages and geometries. With this at hand, we propose possible avenues to mitigate the effect of the quantum uncertainty.
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Submitted 6 September, 2022; v1 submitted 21 March, 2022;
originally announced March 2022.
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Efficient Calculation of Excitonic Effects in Solids Including Approximated Quasiparticle Energies
Authors:
Filipe Matusalem,
Marcelo Marques,
Ivan Guilhon,
Lara K. Teles
Abstract:
In this work we present a new procedure to compute optical spectra including excitonic effects and approximated quasiparticle corrections with reduced computational effort. The excitonic effects on optical spectra are included by solving the Bethe-Salpeter equation, considering quasiparticle eigenenergies and respective wavefunctions obtained within DFT-1/2 method. The electron-hole ladder diagram…
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In this work we present a new procedure to compute optical spectra including excitonic effects and approximated quasiparticle corrections with reduced computational effort. The excitonic effects on optical spectra are included by solving the Bethe-Salpeter equation, considering quasiparticle eigenenergies and respective wavefunctions obtained within DFT-1/2 method. The electron-hole ladder diagrams are approximated by the screened exchange. To prove the capability of the procedure, we compare the calculated imaginary part of the dielectric functions of Si, Ge, GaAs, GaP, GaSb, InAs, InP, and InSb with experimental data. The energy position of the absorption peaks are correctly described. The good agreement with experimental results together with the very significant reduction of computational effort makes the procedure suitable on the investigation of optical spectra of more complex systems.
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Submitted 26 March, 2020;
originally announced March 2020.
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Quantization of spin Hall conductivity in two-dimensional topological insulators versus symmetry and spin-orbit interaction
Authors:
Filipe Matusalem,
Lars Matthes,
Jürgen Furthmüller,
Marcelo Marques,
Lara K. Teles,
Friedhelm Bechstedt
Abstract:
The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric systems independent of the gap size. 2D crystals with hexagonal and square Bravais lattice show similar effects, while true rectangular translational symmetry yields…
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The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric systems independent of the gap size. 2D crystals with hexagonal and square Bravais lattice show similar effects, while true rectangular translational symmetry yields conductivity values much below the quantum $e^2/h$. Field-induced lifting the inversion symmetry does not influence the quantum spin Hall state up to band inversion but the conductivity quantization. Weak symmetry-conserving biaxial but also uniaxial strain has a minor influence as long as inverted gaps dictate the topological character. The results are discussed in terms of the atomic geometry and the Rashba contribution to the spin-orbit interaction (SOI). Translational and point-group symmetry as well as SOI rule the deviation from the quantization of the spin Hall conductance.
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Submitted 27 September, 2019; v1 submitted 24 September, 2019;
originally announced September 2019.
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Charge qubit in van der Waals heterostructures
Authors:
Bruno Lucatto,
Daniel S. Koda,
Friedhelm Bechstedt,
Marcelo Marques,
Lara K. Teles
Abstract:
The use of spatial quantum superpositions of electron states in a gated vdW heterostructure as a charge qubit is presented. We theoretically demonstrate the concept for the ZrSe$_2$/SnSe$_2$ vdW heterostructure using rigorous ab initio calculations. In the proposed scheme, the quantum state is prepared by applying a vertical electric field, is manipulated by short field pulses, and is measured via…
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The use of spatial quantum superpositions of electron states in a gated vdW heterostructure as a charge qubit is presented. We theoretically demonstrate the concept for the ZrSe$_2$/SnSe$_2$ vdW heterostructure using rigorous ab initio calculations. In the proposed scheme, the quantum state is prepared by applying a vertical electric field, is manipulated by short field pulses, and is measured via electric currents. The qubit is robust, operational at high temperature, and compatible with the current 2D technology. The results open up new avenues for the field of physical implementation of qubits.
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Submitted 24 April, 2019;
originally announced April 2019.
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A general procedure for accurate defect excitation energies from DFT-1/2 band structures: The case of NV$^-$ center in diamond
Authors:
Bruno Lucatto,
Lucy V. C. Assali,
Ronaldo Rodrigues Pela,
Marcelo Marques,
Lara K. Teles
Abstract:
A major challenge in creating a quantum computer is to find a quantum system that can be used to implement the qubits. For this purpose, deep centers are prominent candidates, and ab initio calculations are one of the most important tools to theoretically study their properties. However, these calculations are highly involved, due to the large supercell needed, and the computational cost can be ev…
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A major challenge in creating a quantum computer is to find a quantum system that can be used to implement the qubits. For this purpose, deep centers are prominent candidates, and ab initio calculations are one of the most important tools to theoretically study their properties. However, these calculations are highly involved, due to the large supercell needed, and the computational cost can be even larger when one goes beyond the Kohn-Sham scheme to correct the band gap problem and achieve good accuracy. In this work, we present a method that overcomes these problems and provides the optical transition energies as a difference of Kohn-Sham eigenvalues; and even more, provides a complete and accurate band structure of the defect in the semiconductor. Despite the original motivations, the presented methodology is a general procedure, which can be used to systematically study the optical transitions between localized levels within the band gap of any system. The method is an extension of the low-cost and parameter-free DFT-1/2 approximate quasi-particle correction, and allows it to be applied in the study of complex defects. As a benchmark, we apply the method to the NV$^-$ center in diamond. The agreement with experiments is remarkable, with an accuracy of 0.1 eV. The band structure agrees with the expected qualitative features of this system, and thus provides a good intuitive physical picture by itself.
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Submitted 13 August, 2017; v1 submitted 30 May, 2017;
originally announced May 2017.
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Some surprising results of the Kohn-Sham Density Functional
Authors:
L. G. Ferreira,
M. Marques,
L. K. Teles,
R. R. Pelá
Abstract:
For some insulators we present a procedure to determine an electronic density leading to a lower energy than that of the Kohn-Sham ground state.
For some insulators we present a procedure to determine an electronic density leading to a lower energy than that of the Kohn-Sham ground state.
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Submitted 10 September, 2014;
originally announced September 2014.
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Band structure of NiO revisited
Authors:
Luiz G. Ferreira,
Lara K. Teles,
Marcelo Marques
Abstract:
The band structure of a strongly correlated semiconductor as NiO has been the object of much debate [PRL 103, 036404 (2009); PRL 102, 226401 (2009)]. Most authors, using computational techniques well beyond the simple density functional theory and the approximations GGA or LDA, claim that the band gap is about 4.0 eV and that the conduction band is of Ni-3d nature. Thus they seem to forget the r…
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The band structure of a strongly correlated semiconductor as NiO has been the object of much debate [PRL 103, 036404 (2009); PRL 102, 226401 (2009)]. Most authors, using computational techniques well beyond the simple density functional theory and the approximations GGA or LDA, claim that the band gap is about 4.0 eV and that the conduction band is of Ni-3d nature. Thus they seem to forget the results of electron energy-loss spectroscopy and inelastic x-ray scattering, both able to determine electronic transitions of only about 1.0 eV to an optically forbidden Ni-3d band. Further, a simple atomic calculation of the Ni++ spin flip energy demonstrates that a Ni-3d band at 4.0 eV is impossible. To set the issue straight, we calculated NiO with the very successful technique of PRB 78, 125116 (2008). It turns out that a band at 4.0 eV is optically accessible and made of excited atomic states, not Ni-3d. Aside from that, we also found a narrow Ni-3d band at about 1.0 eV. To confirm our procedures once again, we also calculated MnO and obtained the standard results of the good calculations as those cited above, and of experiment.
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Submitted 23 October, 2009;
originally announced October 2009.
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Anomalous Lattice Parameter of Magnetic Semiconductor Alloys
Authors:
Clovis Caetano,
Luiz G. Ferreira,
Marcelo Marques,
Lara K. Teles
Abstract:
The addition of transition metals (TM) to III-V semiconductors radically changes their electronic, magnetic and structural properties. In contrast to the conventional semiconductor alloys, the lattice parameter in magnetic semiconductor alloys, including the ones with diluted concentration (the diluted magnetic semiconductors - DMS), cannot be determined uniquely from the composition. By using f…
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The addition of transition metals (TM) to III-V semiconductors radically changes their electronic, magnetic and structural properties. In contrast to the conventional semiconductor alloys, the lattice parameter in magnetic semiconductor alloys, including the ones with diluted concentration (the diluted magnetic semiconductors - DMS), cannot be determined uniquely from the composition. By using first-principles calculations, we find a direct correlation between the magnetic moment and the anion-TM bond lengths. We derive a simple formula that determines the lattice parameter of a particular magnetic semiconductor by considering both the composition and magnetic moment. The formula makes accurate predictions of the lattice parameter behavior of AlMnN, AlCrN, GaMnN, GaCrN, GaCrAs and GaMnAs alloys. This new dependence can explain some of the hitherto puzzling experimentally observed anomalies, as well as, stimulate other kind of theoretical and experimental investigations.
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Submitted 25 February, 2009;
originally announced February 2009.
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An approximation to density functional theory for an accurate calculation of band-gaps of semiconductors
Authors:
Luiz G. Ferreira,
Marcelo Marques,
Lara K. Teles
Abstract:
The local-density approximation (LDA), together with the half-occupation (transition state) is notoriously successful in the calculation of atomic ionization potentials. When it comes to extended systems, such as a semiconductor infinite system, it has been very difficult to find a way to half-ionize because the hole tends to be infinitely extended (a Bloch wave). The answer to this problem lies…
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The local-density approximation (LDA), together with the half-occupation (transition state) is notoriously successful in the calculation of atomic ionization potentials. When it comes to extended systems, such as a semiconductor infinite system, it has been very difficult to find a way to half-ionize because the hole tends to be infinitely extended (a Bloch wave). The answer to this problem lies in the LDA formalism itself. One proves that the half-occupation is equivalent to introducing the hole self-energy (electrostatic and exchange-correlation) into the Schroedinger equation. The argument then becomes simple: the eigenvalue minus the self-energy has to be minimized because the atom has a minimal energy. Then one simply proves that the hole is localized, not infinitely extended, because it must have maximal self-energy. Then one also arrives at an equation similar to the SIC equation, but corrected for the removal of just 1/2 electron. Applied to the calculation of band gaps and effective masses, we use the self-energy calculated in atoms and attain a precision similar to that of GW, but with the great advantage that it requires no more computational effort than standard LDA.
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Submitted 5 August, 2008;
originally announced August 2008.
