Showing 1–14 of 14 results for author: Tchernij, S D

Photoactivation of color centers induced by laser irradiation in ion-implanted diamond

Authors: V. Pugliese, E. Nieto Hernández, E. Corte, M. Govoni, S. Ditalia Tchernij, P. Olivero, J. Forneris

Abstract: Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal annealing. Their technological uptake will require the availability of reliable methods for the controlled, large scale production of localized individual photon… ▽ More Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal annealing. Their technological uptake will require the availability of reliable methods for the controlled, large scale production of localized individual photon emitters. This task is partially achieved by controlled ion implantation to introduce selected impurities in the host material, and requires the development of challenging beam focusing or collimation procedures coupled with single-ion detection techniques. We report on protocol for the direct optical activation of split-vacancy color centers in diamond via localized processing with continuous wave laser at mW optical powers. We demonstrate the activation of photoluminescent Mg- and Sn-related centers at both the ensemble and single-photon emitter level in ion-implanted, high-purity diamond crystals without further thermal processing. The proposed lithographic method enables the activation of individual color centers at specific positions of a large area sample by means of a relatively inexpensive equipment offering the real-time, in situ monitoring of the process. △ Less

Submitted 10 September, 2024; originally announced September 2024.

Comments: 17 pages, 7 figures

Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing

Authors: E. Nieto Hernández, H. B. Yağcı, V. Pugliese, P. Aprà, J. K. Cannon, S. G. Bishop, J. Hadden, S. Ditalia Tchernij, Olivero, A. J. Bennett, J. Forneris

Abstract: Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamo… ▽ More Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamond. Anti-bunched emission from defect centres within gallium nitride (GaN) and aluminium nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in creation of ensembles at the maximum implantation fluence. Annealing at 600 °C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters, and open new perspectives in the defect engineering of SPEs in solid state. △ Less

Submitted 31 October, 2023; originally announced October 2023.

Comments: 11 pages, 7 figures

Journal ref: Appl. Phys. Lett. 124, 124003 (2024)

Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate

Authors: E. Nieto Hernandez, G. Andrini, A. Crnjac, M. Brajkovic, F. Picariello, E. Corte, V. Pugliese, M. Matijević, P. Aprà, V. Varzi, J. Forneris, M. Genovese, Z. Siketic, M. Jaksic, S. Ditalia Tchernij

Abstract: Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In th… ▽ More Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In this works we demonstrate an approach to increase the density of NV centers upon the high-fluence implantation of MeV N2+ ions on a hot target substrate (>550 °C). Our results show that, with respect to room-temperature implantation, the high-temperature process increases the vacancy density threshold required for the irreversible conversion of diamond to a graphitic phase, thus enabling to achieve higher density ensembles. Furthermore, the formation efficiency of color centers was investigated on diamond substrates implanted at varying temperatures with MeV N2+ and Mg+ ions revealing that the formation efficiency of both NV centers and magnesium-vacancy (MgV) centers increases with the implantation temperature. △ Less

Submitted 26 May, 2025; v1 submitted 30 October, 2023; originally announced October 2023.

Comments: 12 pages, 5 figures

Magnesium-vacancy optical centers in diamond

Authors: Emilio Corte, Greta Andrini, Elena Nieto Hernández, Vanna Pugliese, Ângelo Costa, Goele Magchiels, Janni Moens, Shandirai Malven Tunhuma, Renan Villarreal, Lino M. C. Pereira, André Vantomme, João Guilherme Correia, Ettore Bernardi, Paolo Traina, Ivo Pietro Degiovanni, Ekaterina Moreva, Marco Genovese, Sviatoslav Ditalia Tchernij, Paolo Olivero, Ulrich Wahl, Jacopo Forneris

Abstract: We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the… ▽ More We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the identification of a major fraction of Mg atoms (~30-42%) in sites which are compatible with the split-vacancy structure of the MgV complex. A smaller fraction of Mg atoms (~13-17%) was found on substitutional sites. The photoluminescence emission was investigated both at the ensemble and individual defect level in a temperature range comprised between 5 K and 300 K, offering a detailed picture of the MgV-related emission properties and revealing the occurrence of previously unreported spectral features. The optical excitability of the MgV center was also studied as a function of the optical excitation wavelength enabling to identify the optimal conditions for photostable and intense emission. The results are discussed in the context of the preliminary experimental data and the theoretical models available in the literature, with appealing perspectives for the utilization of the tunable properties of the MgV center for quantum information processing applications. △ Less

Submitted 17 June, 2022; originally announced June 2022.

Comments: 7 figures

Spectral emission dependence of tin-vacancy centers in diamond from thermal processing and chemical functionalization

Authors: Emilio Corte, Selene Sachero, Sviatoslav Ditalia Tchernij, Tobias Lühmann, Sébastien Pezzagna, Paolo Traina, Ivo Pietro Degiovanni, Ekaterina Moreva, Paolo Olivero, Jan Meijer, Marco Genovese, Jacopo Forneris

Abstract: We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative… ▽ More We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative occurrence of the three spectral features can be modified by oxidizing the sample surface following thermal annealing. We finally report the relevant emission properties of each class of individual emitters, including the excited state emission lifetime and the emission intensity saturation parameters. △ Less

Submitted 14 June, 2021; originally announced June 2021.

Comments: 12 pages, 6 figures, 1 table

Spectral features of Pb-related color centers in diamond

Authors: Sviatoslav Ditalia Tchernij, Emilio Corte, Tobias Lühmann, Paolo Traina, Sébastien Pezzagna, Ivo Pietro Degiovanni, Georgios Provatas, Ekaterina Moreva, Jan Meijer, Paolo Olivero, Marco Genovese, Jacopo Forneris

Abstract: We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated… ▽ More We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated with Pb-related defects. Finally, a room-temperature investigation of single-photon emitters under 490.5 nm laser excitation is reported, revealing different spectral signatures with respect to those already reported under 514 nm excitation. This work represents a substantial progress with respect to previous studies on Pb-related color centers, both in the attribution of an articulated series of spectral features and in the understanding of the formation process of this type of defect, thus clarifying the potential of this system for high-impact applications in quantum technologies. △ Less

Submitted 2 June, 2021; originally announced June 2021.

Fluorine-based color centers in diamond

Authors: S. Ditalia Tchernij, T. Lühmann, E. Corte, F. Sardi, F. Picollo, P. Traina, M. Brajkovic, A. Crnjac, S. Pezzagna, I. P. Degiovanni, E. Moreva, P. Aprà, P. Olivero, Z. Siketić, J. Meijer, M. Genovese, J. Forneris

Abstract: We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured s… ▽ More We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600 - 670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice. △ Less

Submitted 9 December, 2020; v1 submitted 28 September, 2020; originally announced September 2020.

Comments: 10 pages, 5 figures

Photoluminescence of lead-related optical centers in single-crystal diamond

Authors: S. Ditalia Tchernij, T. Lühmann, J. Forneris, T. Herzig, J. Küpper, A. Damin, S. Santonocito, P. Traina, E. Moreva, F. Celegato, S. Pezzagna, I. P. Degiovanni, M. Jakšić, M. Genovese, J. Meijer, P. Olivero

Abstract: We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable… ▽ More We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable Pb-based defects is corroborated by the correlation of its intensity with the implantation fluence of Pb ions, while none of the reported features is observed in reference samples implanted with C ions. Furthermore, PL measurements performed as a function of sample temperature (143-300 K range) and un- der different excitation wavelengths (532 nm, 514 nm, 405 nm) suggest that the complex spectral features observed in Pb-implanted diamond might be related to a variety of different defects and/or charge states. This work follows from previous reports on optically active centers in diamond based on group IV impurities, such as Si, Ge and Pb. In perspective, a comprehensive study of this set of defect complexes could bring significant insight on the common features involved in their formation and opto-physical properties, thus offering a solid basis for the devel- opment of a new generation of quantum-optical devices. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Comments: 7 pages, 4 figures

Photo-physical properties of He-related color centers in diamond

Authors: G. Prestopino, M. Marinelli, E. Milani, C. Verona, G. Verona-Rinati P. Traina, E. Moreva, I. P. Degiovanni, M. Genovese, S. Ditalia Tchernij, F. Picollo, P. Olivero, J. Forneris

Abstract: Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm… ▽ More Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm and 560 nm created in three different diamond substrates upon implantation with 1.3 MeV He+ ions and subsequent annealing. The spectral features of the HR centers were studied in an "optical grade" diamond substrate as a function of several physical parameters, namely the measurement temperature, the excitation wavelength and the intensity of external electric fields. The emission lifetimes of the 535 nm and 560 nm lines were also measured by means of time-gated photoluminescence measurements, yielding characteristic decay times of (29 +- 5) ns and (106 +- 10) ns, respectively. The Stark shifting of the HR centers under the application of an external electrical field was observed in a CVD diamond film equipped with buried graphitic electrodes, suggesting a lack of inversion symmetry in the defects' structure. Furthermore, the photoluminescence mapping under 405 nm excitation of a "detector grade" diamond sample implanted at a 1x1010 cm-2 He+ ion fluence enabled to identify the spectral features of both the HR emission lines from the same localized optical spots. The reported results provide a first insight towards the understanding of the structure of He-related defects in diamond and their possible utilization in practical applications △ Less

Submitted 29 August, 2017; originally announced August 2017.

Comments: 9 pages, 3 figures

Single-photon-emitting optical centers in diamond fabricated upon Sn implantation

Authors: S. Ditalia Tchernij, T. Herzig, J. Forneris, J. Küpper, S. Pezzagna, P. Traina, E. Moreva, I. P. Degiovanni, G. Brida, N. Skukan, M. Genovese, M. Jakšić, J. Meijer, P. Olivero

Abstract: The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identi… ▽ More The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order auto-correlation emission functions, by means of Hanbury-Brown-Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence from the polarization of the excitation radiation with about 45 percent contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photo-physical properties to the already well-known Si-V and Ge-V emitters, thus providing results of interest from both the fundamental and applicative points of view. △ Less

Submitted 26 September, 2017; v1 submitted 4 August, 2017; originally announced August 2017.

Comments: 10 pages, 4 figures

Mapping the local spatial charge in defective diamond by means of NV sensors - A "self-diagnostic" concept

Authors: J. Forneris, S. Ditalia Tchernij, P. Traina, E. Moreva, N. Skukan, M. Jakšić, V. Grilj, L. Croin, G. Amato, I. P. Degiovanni, B. Naydenov, F. Jelezko, M. Genovese, P. Olivero

Abstract: Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to t… ▽ More Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to the formation of space charge, memory effects and the degradation of the electronic response associated with radiation damage. Among the most common defects in diamond, the nitrogen-vacancy (NV) center possesses unique spin properties which enable high-sensitivity field sensing at the nanoscale. Here we demonstrate that NV ensembles can be successfully exploited to perform a direct local mapping of the internal electric field distribution of a graphite-diamond-graphite junction exhibiting electrical properties dominated by trap- and space-charge-related conduction mechanisms. By performing optically-detected magnetic resonance measurements, we performed both punctual readout and spatial mapping of the electric field in the active region at different bias voltages. In this novel "self-diagnostic" approach, defect complexes represent not only the source of detrimental space charge effects, but also a unique tool to directly investigate them, by providing experimental evidences on the conduction mechanisms that in previous studies could only be indirectly inferred on the basis of conventional electrical and optical characterization. △ Less

Submitted 24 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. Applied 10, 014024 (2018)

Electrical control of deep NV centers in diamond by means of sub-superficial graphitic micro-electrodes

Authors: J. Forneris, S. Ditalia Tchernij, A. Tengattini, E. Enrico, V. Grilj, N. Skukan, G. Amato, L. Boarino, M. Jakšić, P. Olivero

Abstract: The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-ele… ▽ More The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-electrodes with spacing of 9 μm were created in single-crystal diamond substrates by means of a 6 MeV C scanning micro-beam. The high breakdown field of diamond was exploited to electrically control the variation in the relative population of the negative (NV-) and neutral (NV0) charge states of sub-superficial NV centers located in the inter- electrode gap regions, without incurring into current discharges. Photoluminescence spectra acquired from the biased electrodes exhibited an electrically induced increase up to 40% in the NV- population at the expense of the NV0 charge state. The variation in the relative charge state populations showed a linear dependence from the injected current at applied biases smaller than 250 V, and was interpreted as the result of electron trapping at NV sites, consistently with the Space Charge Limited Current interpretation of the abrupt current increase observed at 300 V bias voltage. In correspondence of such trap-filling-induced transition to a high-current regime, a strong electroluminescent emission from the NV0 centers was observed. In the high-current-injection regime, a decrease in the NV- population was observed, in contrast with the results obtained at lower bias voltages. These results disclose new possibilities in the electrical control of the charge state of NV centers located in the diamond bulk, which are characterized by longer spin coherence times. △ Less

Submitted 19 July, 2016; originally announced July 2016.

Comments: 28 pages, 8 figures

Creation and characterization of He-related color centers in diamond

Authors: Jacopo Forneris, Andrea Tengattini, Sviatoslav Ditalia Tchernij, Federico Picollo, Alfio Battiato, Paolo Traina, Ivo Degiovanni, Ekaterina Moreva, Giorgio Brida, Veljko Grilj, Natko Skukan, Milko Jakšić, Marco Genovese, Paolo Olivero

Abstract: Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photolumines… ▽ More Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photoluminescent (PL) defects upon MeV He implantation in diamond. Such color centers, previously reported only in electroluminescence and cathodoluminescence regime, exhibited two sharp emission lines at 536.5 nm and 560.5 nm, without significant phonon sidebands. A strong correlation between the PL intensities of the above-mentioned emission lines and the He implantation fluence was found in the 10^15-10^17 cm^{-2} fluence range. The PL emission features were not detected in control samples, i.e. samples that were either unirradiated or irradiated with different ion species (H, C). Moreover, the PL emission lines disappeared in samples that were He-implanted above the graphitization threshold. Therefore, the PL features are attributed to optically active defects in the diamond matrix associated with He impurities. The intensity of the 536.5 nm and 560.5 nm emission lines was investigated as a function of the annealing temperature of the diamond substrate. The emission was observed upon annealing at temperatures higher than 500°C, at the expenses of the concurrently decreasing neutral-vacancy-related GR1 emission intensity. Therefore, our findings indicate that the luminescence originates from the formation of a stable lattice defect. Finally, the emission was investigated under different laser excitations wavelengths (i.e. 532 nm and 405 nm) with the purpose of gaining a preliminary insight about the position of the related levels in the energy gap of diamond. △ Less

Submitted 4 June, 2016; originally announced June 2016.

Journal ref: Journal of Luminescence 179 (2016) 59-63

Electroluminescence from nitrogen-vacancy and interstitial-related centers in bulk diamond stimulated by ion-beam-fabricated sub-superficial graphitic micro-electrodes

Authors: J. Forneris, S. Ditalia Tchernij, A. Battiato, F. Picollo, A. Tengattini, V. Grilj, N. Skukan, G. Amato, L. Boarino, I. P. Degiovanni, E. Enrico, P. Traina, M. Jakšić, M. Genovese, P. Olivero

Abstract: We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) charact… ▽ More We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) characterization evidenced a low radiation damage concentration in the inter-electrode gap region, which did not significantly affect the PL features domi- nated by NV centers. The operation of the device in electroluminescence (EL) regime was investigated by ap- plying a bias voltage at the graphitic electrodes, resulting in the injection of a high excitation current above a threshold voltage (~300V), which effectively stimulated an intense EL emission from NV0 centers. In addition, we report on the new observation of two additional sharp EL emission lines (at 563 nm and 580 nm) related to interstitial defects formed during MeV ion beam fabrication. △ Less

Submitted 8 July, 2015; originally announced July 2015.