Showing 1–14 of 14 results for author: Taucer, M

Chiral high-harmonic generation and spectroscopy on solid surfaces using polarization-tailored strong fields

Authors: Tobias Heinrich, Marco Taucer, Ofer Kfir, P. B. Corkum, André Staudte, Claus Ropers, Murat Sivis

Abstract: Strong-field methods in solids enable new strategies for ultrafast nonlinear spectroscopy and provide all-optical insights into the electronic properties of condensed matter in reciprocal and real space. Additionally, solid-state media offers unprecedented possibilities to control high-harmonic generation using modified targets or tailored excitation fields. Here we merge these important points an… ▽ More Strong-field methods in solids enable new strategies for ultrafast nonlinear spectroscopy and provide all-optical insights into the electronic properties of condensed matter in reciprocal and real space. Additionally, solid-state media offers unprecedented possibilities to control high-harmonic generation using modified targets or tailored excitation fields. Here we merge these important points and demonstrate circularly-polarized high-harmonic generation with polarization-matched excitation fields for spectroscopy of chiral electronic properties at surfaces. The sensitivity of our approach is demonstrated for structural helicity and termination-mediated ferromagnetic order at the surface of silicon-dioxide and magnesium oxide, respectively. Circularly polarized radiation emanating from a solid sample now allows to add basic symmetry properties as chirality to the arsenal of strong-field spectroscopy in solids. Together with its inherent temporal (femtosecond) resolution and non-resonant broadband spectrum, the polarization control of high harmonics from condensed matter can illuminate ultrafast and strong field dynamics of surfaces, buried layers or thin films. △ Less

Submitted 30 July, 2021; v1 submitted 12 October, 2020; originally announced October 2020.

Comments: 24 pages, 5 figures

Journal ref: Nat Commun 12, 3723 (2021)

Wannier quasi-classical approach to high harmonic generation in semiconductors

Authors: Andrew M. Parks, Guilmot Ernotte, Adam Thorpe, Chris R. McDonald, Paul B. Corkum, Marco Taucer, Thomas Brabec

Abstract: We develop a quasi-classical theory of high harmonic generation in semiconductors based on an interband current that has been transformed from Bloch to Wannier basis. The Wannier quasi-classical approach reveals a complete picture of the mechanisms shaping high harmonic generation, such that quantitative agreement with full quantum calculations is obtained. The intuitive picture revealed by quasi-… ▽ More We develop a quasi-classical theory of high harmonic generation in semiconductors based on an interband current that has been transformed from Bloch to Wannier basis. The Wannier quasi-classical approach reveals a complete picture of the mechanisms shaping high harmonic generation, such that quantitative agreement with full quantum calculations is obtained. The intuitive picture revealed by quasi-classical wavepacket propagation will be helpful in the interpretation and design of high harmonic and attosecond experiments. Beyond that, the capacity to quantitatively model quantum dynamics with classical trajectories should prove useful for a wider spectrum of condensed matter research, including coherent control, transport theory, and strong field physics. △ Less

Submitted 17 June, 2020; originally announced June 2020.

Comments: 9 pages; 5 figures; 2 appendices

A Gauge Invariant Formulation of Interband and Intraband Currents in Solids

Authors: Guilmot Ernotte, T. J. Hammond, Marco Taucer

Abstract: Experiments and simulations in solid-state high harmonic generation often make use of the distinction between interband and intraband currents. These two contributions to the total current have been associated with qualitatively different processes, as well as physically measurable signatures, for example in the spectral phase of harmonic emission. However, it was recently argued [P. Földi, Phys.… ▽ More Experiments and simulations in solid-state high harmonic generation often make use of the distinction between interband and intraband currents. These two contributions to the total current have been associated with qualitatively different processes, as well as physically measurable signatures, for example in the spectral phase of harmonic emission. However, it was recently argued [P. Földi, Phys. Rev. B 96, 035112 (2017)] that these quantities can depend on the gauge employed in calculations. Since physical quantities are expected to have gauge-independent values, this raises the question of whether the decomposition of the total current into interband and intraband contributions is physically meaningful, or merely a feature of a particular mathematical representation of nature. In this article, we explore this apparent ambiguity. We show that a closely related issue arises when calculating instantaneous band populations. In both the case of inter/intraband currents and in the case of instantaneous band populations, we propose definitions which are gauge-invariant, and thus allow these quantities to be calculated consistently in any gauge. △ Less

Submitted 27 August, 2018; originally announced August 2018.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 98, 235202 (2018)

Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State

Authors: Mohammad Rashidi, Erika Lloyd, Taleana R. Huff, Roshan Achal, Marco Taucer, Jeremiah J. Croshaw, Robert A. Wolkow

Abstract: We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electronic time-resolved scanning tunneling microscopy (TR-STM) is employed to directly measure the carrier capture rates on the nanosecond time scale. A characteristic negative differential resistance (NDR) feature is evident i… ▽ More We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electronic time-resolved scanning tunneling microscopy (TR-STM) is employed to directly measure the carrier capture rates on the nanosecond time scale. A characteristic negative differential resistance (NDR) feature is evident in the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements of DBs on both n and p-type doped samples. It is found that a common model accounts for both observations. Atom-specific Kelvin probe force microscopy (KPFM) measurements confirm the energetic position of the DB's charge transition levels, corroborating STS studies. It is shown that under different tip-induced fields the DB can be supplied from two distinct reservoirs: the bulk conduction band and/or the valence band. We measure the filling and emptying rates of the DBs in the energy regime where electrons are supplied by the bulk valence band. By adding point charges in the vicinity of a DB, Coulombic interactions are shown to shift observed STS and NDR features. △ Less

Submitted 1 November, 2017; originally announced November 2017.

All-Electronic Nanosecond-Resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Authors: Mohammad Rashidi, Wyatt Vine, Jacob A. J. Burgess, Marco Taucer, Roshan Achal, Jason L. Pitters, Sebastian Loth, Robert A. Wolkow

Abstract: The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution which motivates the use of scanning tunneling microscopy (STM), however, conventional STM is limited to millisecond temporal… ▽ More The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution which motivates the use of scanning tunneling microscopy (STM), however, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming. Among them is all-electronic time-resolved STM, which is used in this work to study dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics. △ Less

Submitted 27 June, 2017; originally announced June 2017.

Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale

Authors: Mohammad Rashidi, Marco Taucer, Isil Ozfidan, Erika Lloyd, Mohammad Koleini, Hatem Labidi, Jason L. Pitters, Joseph Maciejko, Robert A. Wolkow

Abstract: Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but viability of device fabrication requires fuller understanding of electron dynamics than has been possible to date. Using an all-electronic time-resolved scanning tunneling microscopy technique and a Green's function trans… ▽ More Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but viability of device fabrication requires fuller understanding of electron dynamics than has been possible to date. Using an all-electronic time-resolved scanning tunneling microscopy technique and a Green's function transport model, we study an isolated dangling bond on a hydrogen terminated silicon surface. A robust negative differential resistance feature is identified as a many body phenomenon related to occupation dependent electron capture by a single atomic level. We measure all the time constants involved in this process and present atomically resolved, nanosecond timescale images to simultaneously capture the spatial and temporal variation of the observed feature. △ Less

Submitted 14 December, 2016; v1 submitted 22 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. Lett. 117, 276805 (2016)

Time-Resolved Single Dopant Charge Dynamics in Silicon

Authors: Mohammad Rashidi, Jacob Burgess, Marco Taucer, Roshan Achal, Jason L. Pitters, Sebastian Loth, Robert A. Wolkow

Abstract: As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal t… ▽ More As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal tool. However, dopant dynamics involve processes occurring at nanosecond timescales, posing a significant challenge to experiment. Here we use time-resolved scanning tunnelling microscopy and spectroscopy to probe and study transport through a dangling bond on silicon before the system relaxes or adjusts to accommodate an applied electric field. Atomically resolved, electronic pump-probe scanning tunnelling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunnelling through the surface dangling bond makes measurement of a signal that would otherwise be too weak to detect feasible. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified. △ Less

Submitted 26 October, 2016; v1 submitted 3 December, 2015; originally announced December 2015.

Journal ref: Nature Communications 7, 13258 (2016)

New fabrication technique for highly sensitive qPlus sensor with well-defined spring constant

Authors: Hatem Labidi, Martin Kupsta, Taleana Huff, Mark Salomons, Douglas Vick, Marco Taucer, Jason Pitters, Robert A. Wolkow

Abstract: A new technique for the fabrication of highly sensitive qPlus sensor for atomic force microscopy (AFM) is described. Focused ion beam was used to cut then weld onto a bare quartz tuning fork a sharp micro-tip from an electrochemically etched tungsten wire. The resulting qPlus sensor exhibits high resonance frequency and quality factor allowing increased force gradient sensitivity. Its spring const… ▽ More A new technique for the fabrication of highly sensitive qPlus sensor for atomic force microscopy (AFM) is described. Focused ion beam was used to cut then weld onto a bare quartz tuning fork a sharp micro-tip from an electrochemically etched tungsten wire. The resulting qPlus sensor exhibits high resonance frequency and quality factor allowing increased force gradient sensitivity. Its spring constant can be determined precisely which allows accurate quantitative AFM measurements. The sensor is shown to be very stable and could undergo usual UHV tip cleaning including e-beam and field evaporation as well as in-situ STM tip treatment. Preliminary results with STM and AFM atomic resolution imaging at $4.5\,K$ of the silicon $Si(111)-7\times 7$ surface are presented. △ Less

Submitted 20 July, 2015; v1 submitted 11 June, 2015; originally announced June 2015.

Comments: 5 pages, 3 figures

Journal ref: Ultramicroscopy 158, 33-37 (2015)

Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

Authors: Hatem Labidi, Marco Taucer, Mohammad Rashidi, Mohammad Koleini, Lucian Livadaru, Jason Pitters, Martin Cloutier, Mark Salomons, Robert A. Wolkow

Abstract: We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating samples prepared with different annealing temperatures, we establish the critical role of subsurface arsenic dopants on the DB electronic properties. We show that when the near surface concentration of dopants is deplete… ▽ More We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating samples prepared with different annealing temperatures, we establish the critical role of subsurface arsenic dopants on the DB electronic properties. We show that when the near surface concentration of dopants is depleted as a result of $1250°C$ flash anneals, a single DB exhibits a sharp conduction step in its I(V) spectroscopy that is not due to a density of states effect but rather corresponds to a DB charge state transition. The voltage position of this transition is perfectly correlated with bias dependent changes in STM images of the DB at different charge states. Density functional theory (DFT) calculations further highlight the role of subsurface dopants on DB properties by showing the influence of the DB-dopant distance on the DB state. We discuss possible theoretical models of electronic transport through the DB that could account for our experimental observations. △ Less

Submitted 20 July, 2015; v1 submitted 2 March, 2015; originally announced March 2015.

Comments: 21 pages, 6 figures

Journal ref: New J. Phys. 17, 073023 (2015)

Silicon Atomic Quantum Dots Enable Beyond-CMOS Electronics

Authors: Robert A. Wolkow, Lucian Livadaru, Jason Pitters, Marco Taucer, Paul Piva, Mark Salomons, Martin Cloutier, Bruno V. C. Martins

Abstract: We review our recent efforts in building atom-scale quantum-dot cellular automata circuits on a silicon surface. Our building block consists of silicon dangling bond on a H-Si(001) surface, which has been shown to act as a quantum dot. First the fabrication, experimental imaging, and charging character of the dangling bond are discussed. We then show how precise assemblies of such dots can be crea… ▽ More We review our recent efforts in building atom-scale quantum-dot cellular automata circuits on a silicon surface. Our building block consists of silicon dangling bond on a H-Si(001) surface, which has been shown to act as a quantum dot. First the fabrication, experimental imaging, and charging character of the dangling bond are discussed. We then show how precise assemblies of such dots can be created to form artificial molecules. Such complex structures can be used as systems with custom optical properties, circuit elements for quantum-dot cellular automata, and quantum computing. Considerations on macro-to-atom connections are discussed. △ Less

Submitted 6 December, 2013; v1 submitted 15 October, 2013; originally announced October 2013.

Comments: 28 pages, 19 figures

Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon

Authors: Zahra Shaterzadeh-Yazdi, Lucian Livadaru, Marco Taucer, Josh Mutus, Jason Pitters, Robert A. Wolkow, Barry C. Sanders

Abstract: We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface -- effectively a two-level system. Theoretical estimates show that the tunneling should be highly coherent but too fast to be measured by any conventional techniques. Our approach is instead to measure the time-averaged charge distribution of our dangling-bond p… ▽ More We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface -- effectively a two-level system. Theoretical estimates show that the tunneling should be highly coherent but too fast to be measured by any conventional techniques. Our approach is instead to measure the time-averaged charge distribution of our dangling-bond pair by a capacitively coupled atomic-force-microscope tip in the presence of both a surface-parallel electrostatic potential bias between the two dangling bonds and a tunable midinfrared laser capable of inducing Rabi oscillations in the system. With a nonresonant laser, the time-averaged charge distribution in the dangling-bond pair is asymmetric as imposed by the bias. However, as the laser becomes resonant with the coherent electron tunneling in the biased pair the theory predicts that the time-averaged charge distribution becomes symmetric. This resonant symmetry effect should not only reveal the tunneling rate, but also the nature and rate of decoherence of single-electron dynamics in our system. △ Less

Submitted 28 January, 2014; v1 submitted 28 May, 2013; originally announced May 2013.

Journal ref: Phys. Rev. B 89, 035315 (2014)

Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface

Authors: Marco Taucer, Lucian Livadaru, Paul G. Piva, Roshan Achal, Hatem Labidi, Jason L. Pitters, Robert A. Wolkow

Abstract: Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single electron sensitive charge-detector. Three distinct charge states of the dangling bond, positive, neutral, and negative, are discerned. Charge state probabilities are extract… ▽ More Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single electron sensitive charge-detector. Three distinct charge states of the dangling bond, positive, neutral, and negative, are discerned. Charge state probabilities are extracted from the data, and analysis of current traces reveals the characteristic single electron charging dynamics. Filling rates are found to decay exponentially with increasing tip-DB separation, but are not a function of sample bias, while emptying rates show a very weak dependence on tip position, but a strong dependence on sample bias, consistent with the notion of an atomic quantum dot tunnel coupled to the tip on one side and the bulk silicon on the other. △ Less

Submitted 30 January, 2014; v1 submitted 15 May, 2013; originally announced May 2013.

Comments: 7 pages, 6 figures

Consequences of Many-cell Correlations in Treating Clocked Quantum-dot Cellular Automata Circuits

Authors: Marco Taucer, Faizal Karim, Konrad Walus, Robert A. Wolkow

Abstract: Quantum-dot Cellular Automata (QCA) provides a basis for classical computation without transistors. Many simulations of QCA rely upon the so-called Intercellular Hartree Approximation (ICHA), which neglects the possibility of entanglement between cells. Here, we present computational results that treat small groups of QCA cells with a Hamiltonian analogous to a quantum mechanical Ising-like spin c… ▽ More Quantum-dot Cellular Automata (QCA) provides a basis for classical computation without transistors. Many simulations of QCA rely upon the so-called Intercellular Hartree Approximation (ICHA), which neglects the possibility of entanglement between cells. Here, we present computational results that treat small groups of QCA cells with a Hamiltonian analogous to a quantum mechanical Ising-like spin chain in a transverse field, including the effects of intercellular entanglement. When energy relaxation is included in the model, we find that intercellular entanglement changes the qualitative behaviour of the system, and new features appear. In clocked QCA, isolated groups of active cells experience oscillations in their polarization states as information propagates. Additionally, energy relaxation tends to bring groups of cells to an unpolarized ground state. This contrasts with the results of previous simulations which employed the ICHA. The ICHA is a valid approximation in the limit of very low tunneling rates, which can be realized in lithographically defined quantum-dots. However, in molecular and atomic implementations of QCA, entanglement will play a greater role. The degree to which entanglement poses a problem for memory and clocking depends upon the interaction of the system with its environment, as well as the system's internal dynamics. △ Less

Submitted 30 July, 2012; originally announced July 2012.

Theory of Non-equilibrium Single Electron Dynamics in STM Imaging of Dangling Bonds on a Hydrogenated Silicon Surface

Authors: Lucian Livadaru, Jason Pitters, Marco Taucer, Robert A. Wolkow

Abstract: During fabrication and scanning-tunneling-microscope (STM) imaging of dangling bonds (DBs) on a hydrogenated silicon surface, we consistently observed halo-like features around isolated DBs for specific imaging conditions. These surround individual or small groups of DBs, have abnormally sharp edges, and cannot be explained by conventional STM theory. Here we investigate the nature of these featur… ▽ More During fabrication and scanning-tunneling-microscope (STM) imaging of dangling bonds (DBs) on a hydrogenated silicon surface, we consistently observed halo-like features around isolated DBs for specific imaging conditions. These surround individual or small groups of DBs, have abnormally sharp edges, and cannot be explained by conventional STM theory. Here we investigate the nature of these features by a comprehensive 3-dimensional model of elastic and inelastic charge transfer in the vicinity of a DB. Our essential finding is that non-equilibrium current through the localized electronic state of a DB determines the charging state of the DB. This localized charge distorts the electronic bands of the silicon sample, which in turn affects the STM current in that vicinity causing the halo effect. The influence of various imaging conditions and characteristics of the sample on STM images of DBs is also investigated. △ Less

Submitted 18 May, 2011; v1 submitted 11 May, 2011; originally announced May 2011.

Comments: 33 pages, 9 figures