Showing 1–50 of 2,180 results for author: Taniguchi, T

Giant elastoresistance in magic-angle twisted bilayer graphene

Authors: Xuetao Ma, Zhaoyu Liu, Jiaqi Cai, Kenji Watanabe, Takashi Taniguchi, Xiaodong Xu, Jiun-Haw Chu, Matthew Yankowitz

Abstract: Strongly correlated and topological phases in moiré materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle (… ▽ More Strongly correlated and topological phases in moiré materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle ($\approx 1.1^{\circ}$), devices exhibit a pronounced elastoresistance that depends on band filling and temperature, with a gauge factor more than two orders of magnitude larger than that of conventional metals. In selected doping regimes the elastoresistance exhibits a Curie-Weiss-like temperature divergence. We discuss possible microscopic origins, including nematic fluctuations and enhanced electronic entropy from fluctuating isospin moments. Our work establishes uniaxial strain as a versatile probe of correlated physics in a moiré material. △ Less

Submitted 15 May, 2025; originally announced May 2025.

Comments: 21 pages, 16 figures

Ten-valley excitonic complexes in charge-tunable monolayer WSe$_2$

Authors: Alain Dijkstra, Amine Ben Mhenni, Dinh Van Tuan, Elif Çetiner, Muriel Schur-Wilkens, Junghwan Kim, Laurin Steiner, Kenji Watanabe, Takashi Taniguchi, Matteo Barbone, Nathan P. Wilson, Hanan Dery, Jonathan J. Finley

Abstract: The optical response of two-dimensional (2D) semiconductors such as monolayer WSe$_2$ is dominated by excitons. Enhanced interactions result in the formation of many-body excitonic complexes, which provide a testing ground for excitons and quantum many-body theories. In particular, correlated many-body excitonic complexes could constitute a limiting case that puts competing exciton descriptions to… ▽ More The optical response of two-dimensional (2D) semiconductors such as monolayer WSe$_2$ is dominated by excitons. Enhanced interactions result in the formation of many-body excitonic complexes, which provide a testing ground for excitons and quantum many-body theories. In particular, correlated many-body excitonic complexes could constitute a limiting case that puts competing exciton descriptions to the test. Here, we report a hitherto unobserved many-body excitonic complex that emerges upon electrostatically doping both the $K$ and $Q$ valleys with charge carriers. We optically probe the WSe$_2$ exciton landscape using charge-tunable devices with unusually thin gate dielectrics that facilitate doping up to several $10^{13}$ cm$^{-2}$. In this previously unexplored regime, we observe the emergence of the thermodynamically stable state in the presence of as many as 10 filled valleys. We gain insight into the physics of this complex using magneto-optical measurements. Our results are well-described by a model where the behavior of the formed exciton complex depends on the number of distinguishable Fermi seas with which the photoexcited electron-hole pair interacts. In addition to expanding the repertoire of excitons in 2D semiconductors, the extremal nature of this complex could probe the limit of exciton models and could help answer open questions about the screened Coulomb interaction in low-dimensional semiconductors. △ Less

Submitted 13 May, 2025; originally announced May 2025.

Comments: 17 pages, 4 figures. Extended Data: 4 figures

Magnetization Dependent In-plane Anomalous Hall Effect in a Low-dimensional System

Authors: I-Hsuan Kao, Ravi Kumar Bandapelli, Zhenhong Cui, Shuchen Zhang, Jian Tang, Tiema Qian, Souvik Sasmal, Aalok Tiwari, Mei-Tung Chen, Rahul Rao, Jiahan Li, James H. Edgar, Kenji Watanabe, Takashi Taniguchi, Ni Ni, Su-Yang Xu, Qiong Ma, Shubhayu Chatterjee, Jyoti Katoch, Simranjeet Singh

Abstract: Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric field, and induced Hall current are mutually orthogonal to each other. Here, we report experimental realization of an unconventional form of AHE in a low-dimensio… ▽ More Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric field, and induced Hall current are mutually orthogonal to each other. Here, we report experimental realization of an unconventional form of AHE in a low-dimensional heterostructure, wherein the Hall response is not only proportional to the out-of-plane magnetization component but also to the in-plane magnetization component. By interfacing a low-symmetry topological semimetal (TaIrTe4) with the ferromagnetic insulator (Cr2Ge2Te6), we create a low-dimensional magnetic system, where only one mirror symmetry is preserved. We show that as long as the magnetization has a finite component in the mirror plane, this last mirror symmetry is broken, allowing the emergence of an AHE signal proportional to in-plane magnetization. Our experiments, conducted on multiple devices, reveal a gate-voltage-dependent AHE response, suggesting that the underlying mechanisms responsible for the Hall effect in our system can be tuned via electrostatic gating. A minimal microscopic model constrained by the symmetry of the heterostructure shows that both interfacial spin-orbit coupling and time-reversal symmetry breaking via the exchange interaction from magnetization are responsible for the emergence of the in-plane AHE. Our work highlights the importance of system symmetries and exchange interaction in low-dimensional heterostructures for designing novel and tunable Hall effects in layered quantum systems. △ Less

Submitted 10 May, 2025; originally announced May 2025.

The role of non-equilibrium populations in dark exciton formation

Authors: Paul Werner, Wiebke Bennecke, Jan Philipp Bange, Giuseppe Meneghini, David Schmitt, Marco Merboldt, Anna M. Seiler, AbdulAziz AlMutairi, Kenji Watanabe, Takashi Taniguchi, G. S. Matthijs Jansen, Junde Liu, Daniel Steil, Stephan Hofmann, R. Thomas Weitz, Ermin Malic, Stefan Mathias, Marcel Reutzel

Abstract: In two-dimensional transition metal dichalcogenide structures, the optical excitation of a bright exciton may be followed by the formation of a plethora of lower energy dark states. In these formation and relaxation processes between different exciton species, non-equilibrium exciton and phonon populations play a dominant role, but remain so far largely unexplored as most states are inaccessible b… ▽ More In two-dimensional transition metal dichalcogenide structures, the optical excitation of a bright exciton may be followed by the formation of a plethora of lower energy dark states. In these formation and relaxation processes between different exciton species, non-equilibrium exciton and phonon populations play a dominant role, but remain so far largely unexplored as most states are inaccessible by regular spectroscopies. Here, on the example of homobilayer 2H-MoS$_2$, we realize direct access to the full exciton relaxation cascade from experiment and theory. By measuring the energy- and in-plane momentum-resolved photoemission spectral function, we reveal a distinct fingerprint for dark excitons in a non-equilibrium excitonic occupation distribution. In excellent agreement with microscopic many-particle calculations, we quantify the timescales for the formation of a non-equilibrium dark excitonic occupation and its subsequent thermalization to 85~fs and 150~fs, respectively. Our results provide a previously inaccessible view of the complete exciton relaxation cascade, which is of paramount importance for the future characterization of non-equilibrium excitonic phases and the efficient design of optoelectronic devices based on two-dimensional materials. △ Less

Submitted 9 May, 2025; originally announced May 2025.

Fermi lune and transdimensional orbital magnetism in rhombohedral multilayer graphene

Authors: Min Li, Qingxin Li, Xin Lu, Hua Fan, Kenji Watanabe, Takashi Taniguchi, Yue Zhao, Xin-Cheng Xie, Lei Wang, Jianpeng Liu

Abstract: The symmetry and geometry of the Fermi surface play an essential role in governing the transport properties of a metallic system. A Fermi surface with reduced symmetry is intimately tied to unusual transport properties such as anomalous Hall effect and nonlinear Hall effect. Here, combining theoretical calculations and transport measurements, we report the discovery of a new class of bulk Fermi su… ▽ More The symmetry and geometry of the Fermi surface play an essential role in governing the transport properties of a metallic system. A Fermi surface with reduced symmetry is intimately tied to unusual transport properties such as anomalous Hall effect and nonlinear Hall effect. Here, combining theoretical calculations and transport measurements, we report the discovery of a new class of bulk Fermi surface structure with unprecedented low symmetry, the ``Fermi lune", with peculiar crescent shaped Fermi energy contours, in rhombohedral multilayer graphene. This emergent Fermi-lune structure driven by electron-electron interactions spontaneously breaks time-reversal, mirror, and rotational symmetries, leading to two distinctive phenomena: giant intrinsic non-reciprocity in longitudinal transport and a new type of magnetism termed ``transdimensional orbital magnetism". Coupling the Fermi lune to a superlattice potential further produces a novel Chern insulator exhibiting quantized anomalous Hall effect controlled by in-plane magnetic field. Our work unveils a new symmetry breaking state of matter in the transdimensional regime, which opens an avenue for exploring correlated and topological quantum phenomena in symmetry breaking phases. △ Less

Submitted 8 May, 2025; originally announced May 2025.

Comments: 8 pages, 4 figures ,1 table in main text. 7 figures in Supplementary Materials

Ballistic-to-diffusive transition in engineered counter-propagating quantum Hall channels

Authors: Aifei Zhang, Kenji Watanabe, Takashi Taniguchi, Patrice Roche, Carles Altimiras, François Parmentier, Olivier Maillet

Abstract: Exotic quantum Hall systems hosting counter-propagating edge states can show seemingly non-universal transport regimes, usually depending on the size of the sample. We experimentally probe transport in a quantum Hall sample engineered to host a tunable number of counter-propagating edge states. The latter are coupled by Landauer reservoirs, which force charge equilibration over a tunable effective… ▽ More Exotic quantum Hall systems hosting counter-propagating edge states can show seemingly non-universal transport regimes, usually depending on the size of the sample. We experimentally probe transport in a quantum Hall sample engineered to host a tunable number of counter-propagating edge states. The latter are coupled by Landauer reservoirs, which force charge equilibration over a tunable effective length. We show that charge transport is determined by the balance of up- and downstream channels, with a ballistic regime emerging for unequal numbers of channels. For equal numbers, we observe a transition to a critical diffusive regime, characterized by a diverging equilibration length. Our approach allows simulating the equilibration of hole-conjugate states and other exotic quantum Hall effects with fully controlled parameters using well-understood quantum Hall states. △ Less

Submitted 8 May, 2025; originally announced May 2025.

Transdimensional anomalous Hall effect in rhombohedral thin graphite

Authors: Qingxin Li, Hua Fan, Min Li, Yinghai Xu, Junwei Song, Kenji Watanabe, Takashi Taniguchi, Hua Jiang, X. C. Xie, James Hone, Cory Dean, Yue Zhao, Jianpeng Liu, Lei Wang

Abstract: Anomalous Hall effect (AHE), occurring in materials with broken time-reversal symmetry, epitomizes the intricate interplay between magnetic order and orbital motions of electrons[1-4]. In two dimensional (2D) systems, AHE is always coupled with out-of-plane orbital magnetization associated in-plane chiral orbital motions. In three dimensional (3D) systems, carriers can tunnel or scatter along the… ▽ More Anomalous Hall effect (AHE), occurring in materials with broken time-reversal symmetry, epitomizes the intricate interplay between magnetic order and orbital motions of electrons[1-4]. In two dimensional (2D) systems, AHE is always coupled with out-of-plane orbital magnetization associated in-plane chiral orbital motions. In three dimensional (3D) systems, carriers can tunnel or scatter along the third dimension within the vertical mean free path lz. When sample thickness far exceeds lz, scattering disrupts coherent out-of-plane motion, making 3D AHE effectively a thickness-averaged 2D counterpart[4] -- still governed by out-of-plane orbital magnetization arising from in-plane orbital motions. Here, we explore an uncharted regime where the sample thickness is much larger than the atomic layer thickness yet smaller than or comparable to lz. In such "transdimensional" regime, carriers can sustain coherent orbital motions both within and out of the 2D plane, leading to a fundamentally new type of AHE that couples both out-of-plane and in-plane orbital magnetizations. We report the first observation of such phenomenon -- transdimensional AHE (TDAHE) -- in electrostatically gated rhombohedral ennealayer graphene. This state emerges from a peculiar metallic phase that spontaneously breaks time-reversal, mirror and rotational symmetries driven by electron-electron interactions. Such TDAHE manifests as concurrent out-of-plane and in-plane Hall resistance hysteresis, controlled by external magnetic fields along either direction. Our findings unveils a new class of AHE, opening an unexplored paradigm for correlated and topological physics in transdimensional systems. △ Less

Submitted 6 May, 2025; originally announced May 2025.

Comments: 35pages, 15figures

Probing Vortex Dynamics in 2D Superconductors with Scanning Quantum Microscope

Authors: Sreehari Jayaram, Malik Lenger, Dong Zhao, Lucas Pupim, Takashi Taniguchi, Kenji Watanabe, Ruoming Peng, Marc Scheffler, Rainer Stöhr, Mathias S. Scheurer, Jurgen Smet, Jörg Wrachtrup

Abstract: The visualization of the magnetic responses of a two-dimensional (2D) superconducting material on the nanoscale is a powerful approach to unravel the underlying supercurrent behavior and to investigate critical phenomena in reduced dimensions. In this study, scanning quantum microscopy is utilized to explore the local magnetic response of the 2D superconductor 2H-NbSe2. Our technique enables both… ▽ More The visualization of the magnetic responses of a two-dimensional (2D) superconducting material on the nanoscale is a powerful approach to unravel the underlying supercurrent behavior and to investigate critical phenomena in reduced dimensions. In this study, scanning quantum microscopy is utilized to explore the local magnetic response of the 2D superconductor 2H-NbSe2. Our technique enables both static and dynamic sensing of superconducting vortices with high sensitivity and a spatial resolution down to 30 nm, unveiling unexpected phenomena linked to the intrinsic 2D nature of the superconductor, which are challenging to detect with more conventional local probes. Vortices do not arrange in a hexagonal lattice, but form a distorted vortex glass with expanding vortex size. A vortex can exhibit strong local dynamics due to thermal excitation. As the critical temperature is approached, a clear melting of the vortex glass is identified, leading to distinct configurations under different cooling conditions. Vortex fluctuations can also be probed through spin Hahn-echo measurements, which reveal the spin decoherence even well below the critical temperature -- and, intriguingly, enhanced decoherence at lower temperatures. Spatiotemporal microscopy of the magnetic dynamics associated with vortex excitations and fluctuations provides direct evidence of 2D superconducting phenomena at the nanoscale. △ Less

Submitted 5 May, 2025; originally announced May 2025.

Tunable Chern Insulators in Moiré-Distant and Moiré-Proximal Rhombohedral Pentalayer Graphene

Authors: Chushan Li, Zheng Sun, Kai Liu, Lei Qiao, Yifan Wei, Chuanqi Zheng, Chenyu Zhang, Kenji Watanabe, Takashi Taniguchi, Hao Yang, Dandan Guan, Liang Liu, Shiyong Wang, Yaoyi Li, Hao Zheng, Canhua Liu, Bingbing Tong, Li Lu, Jinfeng Jia, Zhiwen Shi, Jianpeng Liu, Guorui Chen, Tingxin Li, Xiaoxue Liu

Abstract: Rhombohedral-stacked multilayer graphene aligned with hexagonal boron nitride has emerged as an excellent platform for investigating exotic quantum states arising from the interplay between electron correlations and topology. Here, we report the electrical transport properties of a rhombohedral pentalayer graphene/hexagonal boron nitride moiré device with a twist angle of 1.02° and a moiré period… ▽ More Rhombohedral-stacked multilayer graphene aligned with hexagonal boron nitride has emerged as an excellent platform for investigating exotic quantum states arising from the interplay between electron correlations and topology. Here, we report the electrical transport properties of a rhombohedral pentalayer graphene/hexagonal boron nitride moiré device with a twist angle of 1.02° and a moiré period of approximately 10.1 nm. In this device, we observe anomalous Hall effects and integer Chern insulators in both moiré-proximal and moiré-distant regimes. Specifically, in the moiré-distant regime, an integer Chern insulator with Chern number C = 1 emerges at moiré filling ν = 1 under a moderate magnetic field. In the moiré-proximal regime, we identify a rich set of topological and correlated phases near ν = 1, including integer Chern insulator states with C = \pm 1 and trivial insulators, and they are highly sensitive to both the applied displacement field and magnetic field. Moreover, at ν = 2 in the moiré-proximal regime, Chern insulators with C = \pm 1 has also been observed. Our results underscore the sensitivity of topological quantum states to the moiré potential strength and highlight the importance of twist-angle engineering in exploring novel quantum states in rhombohedral-stacked multilayer graphene moiré systems. △ Less

Submitted 3 May, 2025; originally announced May 2025.

Observation of Half-Quantum Vorticity in an Iron-based Superconductor

Authors: Mohammad Javadi Balakan, Genda Gu, Qiang Li, Kenji Watanabe, Takashi Taniguchi, Ji Ung Lee

Abstract: Half-quantum vortices -- topological excitations carrying half the superconducting flux quantum -- are predicted to emerge in spin-triplet superconductors, where the spin component of order parameter enables fractional flux quantization. We present direct transport signatures of half-quantum vorticity in single-crystal Fe(Te,Se), an iron-based superconductor with helical Dirac surface states. Usin… ▽ More Half-quantum vortices -- topological excitations carrying half the superconducting flux quantum -- are predicted to emerge in spin-triplet superconductors, where the spin component of order parameter enables fractional flux quantization. We present direct transport signatures of half-quantum vorticity in single-crystal Fe(Te,Se), an iron-based superconductor with helical Dirac surface states. Using mesoscopic superconducting ring devices, we observe half-integer quantum oscillations arising from the splitting of quantized fluxoid states, further supported by distinct signatures of trapped half-integer fluxoids. The quantum oscillations are modulated by a background symmetry, set by the relative orientation of the DC bias current and perpendicular magnetic field, consistent with strong spin-orbit coupling. These findings demonstrate the long-sought half-quantum vorticity in spin-polarized superconductors and open new directions toward non-Abelian excitations in quantum materials and scalable topological qubits. △ Less

Submitted 2 May, 2025; originally announced May 2025.

Systematic investigation of the generation of luminescent emitters in hBN via irradiation engineering

Authors: Pooja C. Sindhuraj, José M. Caridad, Corné Koks, Moritz Fischer, Denys I. Miakota, Juan A. Delgado-Notario, Kenji Watanabe, Takashi Taniguchi, Stela Canulescu, Sanshui Xiao, Martijn Wubs, Nicolas Stenger

Abstract: Hexagonal boron nitride (hBN), a two-dimensional (2D) material, garners interest for hosting bright quantum emitters at room temperature. A great variety of fabrication processes have been proposed with various yields of quantum emitters. In this work, we study the influence of several parameters, such as irradiation energy, annealing environment, and the type of hBN, on the emitter density in hBN… ▽ More Hexagonal boron nitride (hBN), a two-dimensional (2D) material, garners interest for hosting bright quantum emitters at room temperature. A great variety of fabrication processes have been proposed with various yields of quantum emitters. In this work, we study the influence of several parameters, such as irradiation energy, annealing environment, and the type of hBN, on the emitter density in hBN. Our results show (i) high emitter density with oxygen irradiation at 204 eV, (ii) post-annealing in carbon-rich atmospheres significantly increases emitter density, reinforcing carbon's potential role, (iii) no significant effect of oxygen pre-annealing, and (iv) a slightly increased emitter density from hBN crystals with lower structural quality. Although the precise origin of the emitters remains unclear, our study shows that oxygen irradiation and subsequent inert annealing in a carbon-rich environment play a crucial role in emitter generation, while the other processing parameters have a smaller influence. As such, our systematic study and findings show relevant advances towards the reproducible formation of visible-frequency quantum emitters in hBN. △ Less

Submitted 2 May, 2025; originally announced May 2025.

Comments: 13 pages, 8 figures, 5 tables

Tuning relaxation and nonlinear upconversion of valley-exciton-polaritons in a monolayer semiconductor

Authors: Hangyong Shan, Jamie M. Fitzgerald, Roberto Rosati, Gilbert Leibeling, Kenji Watanabe, Takashi Taniguchi, Seth Ariel Tongay, Falk Eilenberger, Martin Esmann, Sven Höfling, Ermin Malic, Christian Schneider

Abstract: Controlling exciton relaxation and energy conversion pathways via their coupling to photonic modes is a central task in cavity-mediated quantum materials research. In this context, the light-matter hybridization in optical cavities can lead to intriguing effects, such as modified carrier transport, enhancement of optical quantum yield, and control of chemical reaction pathways. Here, we investigat… ▽ More Controlling exciton relaxation and energy conversion pathways via their coupling to photonic modes is a central task in cavity-mediated quantum materials research. In this context, the light-matter hybridization in optical cavities can lead to intriguing effects, such as modified carrier transport, enhancement of optical quantum yield, and control of chemical reaction pathways. Here, we investigate the impact of the strong light-matter coupling regime on energy conversion, both in relaxation and upconversion schemes, by utilizing a strongly charged MoSe2 monolayer embedded in a spectrally tunable open-access cavity. We find that the charge carrier gas yields a significantly modified photoluminescence response of cavity exciton-polaritons, dominated by an intra-cavity like pump scheme. In addition, upconversion luminescence emerges from a population transfer from fermionic trions to bosonic exciton-polaritons. Due to the availability of multiple optical modes in the tunable open cavity, it seamlessly meets the cavity-enhanced double resonance condition required for an efficient upconversion. The latter can be actively tuned via the cavity length in-situ, displaying nonlinear scaling in intensity and fingerprints of the valley polarization. This suggests mechanisms that include both trion-trion Auger scattering and phonon absorption as its underlying microscopic origin. △ Less

Submitted 1 May, 2025; originally announced May 2025.

Modification of the scattering mechanisms in bilayer graphene in proximity to a molecular thin film probed in the mesoscopic regime

Authors: Anise Mansour, Deanna Diaz, Movindu Kawshan Dissanayake, Erin Henkhaus, Jungyoun Cho, Vinh Tran, Francisco Ramirez, Eric Corona-Oceguera, Joshua Luna, Kenta Kodama, Yueyun Chen, Ho Chan, Jacob Weber, Blake Koford, Patrick Barfield, Maya Martinez, Kenji Watanabe, Takashi Taniguchi, B. C. Regan, Matthew Mecklenburg, Thomas Gredig, Claudia Ojeda-Aristizabal

Abstract: Quantum coherent effects can be probed in multilayer graphene through electronic transport measurements at low temperatures. In particular, bilayer graphene is known to be susceptible to quantum interference corrections of the conductivity, presenting weak localization at all electronic densities, and dependent on different scattering mechanisms as well as on the trigonal warping of the electron d… ▽ More Quantum coherent effects can be probed in multilayer graphene through electronic transport measurements at low temperatures. In particular, bilayer graphene is known to be susceptible to quantum interference corrections of the conductivity, presenting weak localization at all electronic densities, and dependent on different scattering mechanisms as well as on the trigonal warping of the electron dispersion near the K and K' valleys. Proximity effects with a molecular thin film influence these scattering mechanisms, which can be quantified through the known theory of magnetoconductance for bilayer graphene. Here, we present weak localization measurements in a copper-phthalocyanine / bilayer graphene / h-BN heterostructure that suggest an important suppression of trigonal warping effects in bilayer graphene (BLG), restoring the manifestation of the chirality of the charge carriers in the localization properties of BLG. Additionally, we observe a charge transfer of 3.6$\times$10$^{12}$cm$^{-2}$ from the BLG to the molecules, as well as a very small degradation of the mobility of the BLG/h-BN heterostructure upon the deposition of copper phthalocyanine (CuPc). The molecular arrangement of the CuPc thin film is characterized in a control sample through transmission electron microscopy, that we relate to the electronic transport results. △ Less

Submitted 29 April, 2025; originally announced April 2025.

Comments: 10 pages, 9 figures

Anisotropic supercurrent suppression and revivals in a graphene-based Josephson junction under in-plane magnetic fields

Authors: Philipp Schmidt, Katarina Stanojević, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Vincent Mourik, Christoph Stampfer

Abstract: We report on a tunable Josephson junction formed by a bilayer graphene ribbon encapsulated in WSe$_2$ with superconducting niobium contacts. We characterize the junction by measurements of the magnetic field induced interference pattern, and the AC Josephson effect manifested as "Shapiro steps", examining current dependent hysteresis and junction dynamics. The latter can be tuned by temperature, g… ▽ More We report on a tunable Josephson junction formed by a bilayer graphene ribbon encapsulated in WSe$_2$ with superconducting niobium contacts. We characterize the junction by measurements of the magnetic field induced interference pattern, and the AC Josephson effect manifested as "Shapiro steps", examining current dependent hysteresis and junction dynamics. The latter can be tuned by temperature, gate voltage, and magnetic field. Finally, we examine the evolution of the supercurrent when subjected to in-plane magnetic fields. Notably, we observe a strong anisotropy in the supercurrent with respect to the orientation of the in-plane magnetic field. When the field is parallel to the current direction, the supercurrent is suppressed, and shows revivals with increasing magnetic field, whereas it remains almost unaffected when the field is oriented in a perpendicular direction. We suggest that this anisotropy is caused by the dependence of supercurrent interference on the junction geometry. △ Less

Submitted 28 April, 2025; originally announced April 2025.

Interaction-driven quantum phase transitions between topological and crystalline orders of electrons

Authors: André Haug, Ravi Kumar, Tomer Firon, Misha Yutushui, Kenji Watanabe, Takashi Taniguchi, David F. Mross, Yuval Ronen

Abstract: Topological and crystalline orders of electrons both benefit from enhanced Coulomb interactions in partially filled Landau levels. In bilayer graphene (BLG), the competition between fractional quantum Hall liquids and electronic crystals can be tuned electrostatically. Applying a displacement field leads to Landau-level crossings, where the interaction potential is strongly modified due to changes… ▽ More Topological and crystalline orders of electrons both benefit from enhanced Coulomb interactions in partially filled Landau levels. In bilayer graphene (BLG), the competition between fractional quantum Hall liquids and electronic crystals can be tuned electrostatically. Applying a displacement field leads to Landau-level crossings, where the interaction potential is strongly modified due to changes in the orbital wave functions. Here, we leverage this control to investigate phase transitions between topological and crystalline orders at constant filling factors in the lowest Landau level of BLG. Using transport measurements in high-quality hBN-encapsulated devices, we study transitions as a function of displacement field near crossings of $N=0$ and $N=1$ orbitals. The enhanced Landau-level mixing near the crossing stabilizes electronic crystals at all fractional fillings, including a resistive state at $ν= \frac{1}{3}$ and a reentrant integer quantum Hall state at $ν= \frac{7}{3}$. On the $N=0$ side, the activation energies of the crystal and fractional quantum Hall liquid vanish smoothly and symmetrically at the transition, while the $N=1$ transitions out of the crystal appear discontinuous. Additionally, we observe quantized plateaus forming near the crystal transition at half filling of the $N=0$ levels, suggesting a paired composite fermion state stabilized by Landau level mixing. △ Less

Submitted 25 April, 2025; originally announced April 2025.

Comments: 15 pages, 4 figures, 27 pages supplemental, 20 supplemental figures

Tailoring hBN's Phonon Polaritons with the Plasmonic Phase-Change Material In3SbTe2

Authors: Lina Jäckering, Aaron Moos, Lukas Conrads, Yiheng Li, Alexander Rothstein, Dominique Malik, Kenji Watanabe, Takashi Taniguchi, Matthias Wuttig, Christoph Stampfer, Thomas Taubner

Abstract: Polaritons in van-der-Waals materials (vdWM) promise high confinement and multiple tailoring options by optical structures, e.g., resonators, launching structures and lenses. These optical structures are conventionally fabricated using cumbersome multi-process lithography techniques. In contrast, phase-change materials (PCMs) offer fast and reconfigurable programming of optical structures. PCMs ca… ▽ More Polaritons in van-der-Waals materials (vdWM) promise high confinement and multiple tailoring options by optical structures, e.g., resonators, launching structures and lenses. These optical structures are conventionally fabricated using cumbersome multi-process lithography techniques. In contrast, phase-change materials (PCMs) offer fast and reconfigurable programming of optical structures. PCMs can reversibly be switched between two stable phases with distinct permittivities by local heating, e.g., by optical laser pulses. While the well-known dielectric PCM GeSbTe-alloys feature only a permittivity change, the PCM In3SbTe2 can be switched between a dielectric and metallic phase. This makes In3SbTe2 promising for programming metallic launching structures. Here, we demonstrate direct optical programming and thereby rapid prototyping of optical launching structures in In3SbTe2 to tailor and confine polaritons in vdWM. We combine the vdWM hexagonal boron nitride (hBN) with In3SbTe2 and optically program circular resonators for hBN's phonon polaritons through hBN into In3SbTe2. We investigate the polariton resonators with near-field optical microscopy. Demonstrating the reconfigurability, we decrease the resonator diameter to increase the polariton confinement. Finally, we fabricate focusing structures for hBN's phonon polaritons whose focal point is changed in a second post-processing step. We promote In3SbTe2 as a versatile platform for rapid prototyping of polariton optics in vdWM. △ Less

Submitted 28 April, 2025; v1 submitted 25 April, 2025; originally announced April 2025.

Correlated insulating states in slow Dirac fermions on a honeycomb moir{é} superlattice

Authors: Dongyang Yang, Jing Liang, Haodong Hu, Nitin Kaushal, Chih-En Hsu, Kenji Watanabe, Takashi Taniguchi, Jerry. I Dadap, Zhenglu Li, Marcel Franz, Ziliang Ye

Abstract: Strong Coulomb repulsion is predicted to open a many-body charge gap at the Dirac point of graphene, transforming the semimetal into a Mott insulator. However, this correlated insulating phase has remained inaccessible in pristine graphene, where a large Fermi velocity dominates the interaction effects. To overcome this limitation, we realize a honeycomb moir{é} superlattice in a twisted MoSe$_2$… ▽ More Strong Coulomb repulsion is predicted to open a many-body charge gap at the Dirac point of graphene, transforming the semimetal into a Mott insulator. However, this correlated insulating phase has remained inaccessible in pristine graphene, where a large Fermi velocity dominates the interaction effects. To overcome this limitation, we realize a honeycomb moir{é} superlattice in a twisted MoSe$_2$ homobilayer, where a graphene-like band structure forms with a Fermi velocity reduced by nearly two orders of magnitude. These slow moir{é} bands are folded from the valence band maximum at the $Γ$ valley of the extended Brillouin zone with negligible spin-orbital coupling, and can therefore simulate massless Dirac fermions in the strongly correlated regime with full SU(2) symmetry. By correlating Rydberg exciton sensing with moir{é} trions of different spatial characters, we detect a Mott gap at the Dirac point that persists up to 110 K. We further identify correlated insulating states at $ν=-1$ with a weak ferromagnetic coupling as well as at several fractional fillings. Our results highlight the potential of studying a wide range of quantum many-body phenomena in twisted two-dimensional materials. △ Less

Submitted 24 April, 2025; originally announced April 2025.

Spin wave propagation in a ring-shaped magnonic waveguide

Authors: Franz Vilsmeier, Takuya Taniguchi, Michael Lindner, Christian Riedel, Christian Back

Abstract: We experimentally investigate frequency-selective spin wave (SW) transmission in a micrometre-scale, ring-shaped magnonic resonator integrated with a linear Yttrium Iron Garnet (YIG) stripe. Using super-Nyquist-sampling magneto-optical Kerr effect microscopy (SNS-MOKE) and micro-focused Brillouin light scattering (μ-BLS), we probe SW dynamics in the dipolar regime under in-plane magnetisation. Spa… ▽ More We experimentally investigate frequency-selective spin wave (SW) transmission in a micrometre-scale, ring-shaped magnonic resonator integrated with a linear Yttrium Iron Garnet (YIG) stripe. Using super-Nyquist-sampling magneto-optical Kerr effect microscopy (SNS-MOKE) and micro-focused Brillouin light scattering (μ-BLS), we probe SW dynamics in the dipolar regime under in-plane magnetisation. Spatially resolved measurements reveal a sharp transmission peak at 3.92 GHz for an external field of 74 mT, demonstrating strong frequency selectivity. Our results show that this selectivity arises from scattering and interference between multiple SW modes within the ring. These modes are governed by the anisotropic dispersion relation, transverse mode quantisation due to geometric confinement, and inhomogeneities of the effective magnetic field. In addition, the anisotropy enforces fixed group velocity directions, leading to caustic-like propagation that limits efficient out-coupling. Fourier analysis reveals discrete wavevector components consistent with quantised transverse eigenmodes. Additional μ-BLS measurements at 70 mT show a shift of the transmission peak, confirming that the filtering characteristics are tunable by external parameters. △ Less

Submitted 24 April, 2025; originally announced April 2025.

Nanoscale infrared and microwave imaging of stacking faults in multilayer graphene

Authors: Ludwig Holleis, Liam Cohen, Noah Samuelson, Caitlin L. Patterson, Ysun Choi, Marco Valentini, Owen Sheekey, Youngjoon Choi, Jiaxi Zhou, Hari Stoyanov, Takashi Taniguchi, Kenji Watanabe, Qichi Hu, Jin Hee Kim, Cassandra Phillips, Peter De Wolf, Andrea F. Young

Abstract: Graphite occurs in a range of metastable stacking orders characterized by both the number and direction of shifts between adjacent layers by the length of a single carbon-carbon bond. At the extremes are Bernal (or ``ABAB...'') stacking, where the direction of the interlayer shift alternates with each layer, and rhombohedral (or ``ABCABC...'') stacking order where the shifts are always in the same… ▽ More Graphite occurs in a range of metastable stacking orders characterized by both the number and direction of shifts between adjacent layers by the length of a single carbon-carbon bond. At the extremes are Bernal (or ``ABAB...'') stacking, where the direction of the interlayer shift alternates with each layer, and rhombohedral (or ``ABCABC...'') stacking order where the shifts are always in the same direction. However, for an N-layer system, there are in principle $N-1$ unique metastable stacking orders of this type. Recently, it has become clear that stacking order has a strong effect on the low energy electronic band structure with single-layer shifts completely altering the electronic properties. Most experimental work has focused on the extremal stacking orders in large part due to the difficulty of isolating and identifying intermediate orders. Motivated by this challenge, here we describe two atomic force microscopy (AFM) based techniques to unambiguously distinguish stacking orders and defects in graphite flakes. Photo-thermal infrared atomic force microscope (AFM-IR) is able to distinguish stacking orders across multiple IR wavelengths and readily provides absolute contrast via IR spectral analysis. Scanning microwave impedance microscopy (sMIM) can distinguish the relative contrast between Bernal, intermediate and rhombohedral domains. We show that both techniques are well suited to characterizing graphite van der Waals devices, providing high contrast determination of stacking order, subsurface imaging of graphene flakes buried under a hexagonal boron nitride (hBN) dielectric layer, and identifying nanoscale domain walls. Our results pave the way for the reliable fabrication of graphene multilayer devices of definite interlayer registry. △ Less

Submitted 24 April, 2025; originally announced April 2025.

Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot

Authors: Mario Di Luca, Emily Hajigeorgiou, Zekang Zhou, Tengyan Feng, Kenji Watanabe, Takashi Taniguchi, Ferdinand Kuemmeth, Mitali Banerjee

Abstract: Electronic interferometers in the quantum Hall regime are one of the best tools to study the statistical properties of localized quasiparticles in the topologically protected bulk. However, since their behavior is probed via chiral edge modes, bulk-to-edge and inter-edge interactions are two important effects that affect the observations. Moreover, almost all kinds of interferometers heavily rely… ▽ More Electronic interferometers in the quantum Hall regime are one of the best tools to study the statistical properties of localized quasiparticles in the topologically protected bulk. However, since their behavior is probed via chiral edge modes, bulk-to-edge and inter-edge interactions are two important effects that affect the observations. Moreover, almost all kinds of interferometers heavily rely on a pair of high-quality quantum point contacts where the presence of impurities significantly modifies the behavior of such constrictions, which in turn can alter the outcome of the measurements. Antidots, potential hills in the quantum Hall regime, are particularly valuable in this context, as they overcome the geometric limitations of conventional geometries and act as controlled impurities within a quantum point contact. Furthermore, antidots allow for quasiparticle charge detection through simple conductance measurements, replacing the need for complex techniques such as shot noise. Here, we use a gate-defined bilayer graphene antidot, operated in the Coulomb-dominated regime. By varying the antidot potential, we can tune inter-edge interactions, enabling a crossover from a single-dot to a double-dot behavior. In the latter, strong coupling between the two edge states leads to edge-state pairing, resulting in a measured doubling of the tunneling charge. We find that in certain regimes, the inter-edge coupling completely dominates over other energy scales of the system, overshadowing the interference effects these devices are mainly designed to probe. These results highlight the significant role of inter-edge interactions and establish antidots as a versatile platform for exploring quantum Hall interferometry. △ Less

Submitted 23 April, 2025; originally announced April 2025.

Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS2 through Coulomb Engineering

Authors: Jing Liang, Yuan Xie, Dongyang Yang, Shangyi Guo, Kenji Watanabe, Takashi Taniguchi, Jerry I. Dadap, David Jones, Ziliang Ye

Abstract: High-speed, non-volatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase change and ferroelectric materials, achieving highly efficient, reversible, rapid switching of optical properties has remained a challenge. Recently, sliding ferroelectricity has been… ▽ More High-speed, non-volatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase change and ferroelectric materials, achieving highly efficient, reversible, rapid switching of optical properties has remained a challenge. Recently, sliding ferroelectricity has been discovered in 2D semiconductors, which also host strong excitonic effects. Here, we demonstrate that these materials enable nanosecond ferroelectric switching in the complex refractive index, largely impacting their linear optical responses. The maximum index modulation reaches about 4, resulting in a relative reflectance change exceeding 85%. Both on and off switching occurs within 2.5 nanoseconds, with switching energy at femtojoule levels. The switching mechanism is driven by tuning the excitonic peak splitting of a rhombohedral molybdenum disulfide bilayer in an engineered Coulomb screening environment. This new switching mechanism establishes a new direction for developing high-speed, non-volatile optical memories and highly efficient, compact reconfigurable photonic devices. Additionally, the demonstrated imaging technique offers a rapid method to characterize domains and domain walls in 2D semiconductors with rhombohedral stacking. △ Less

Submitted 22 April, 2025; originally announced April 2025.

Layered semiconductors integrated with polyimide thin films for high-quality valleytronic and quantum-photonic systems

Authors: Jithin T Surendran, Indrajeet D Prasad, Kenji Watanabe, Takashi Taniguchi, Santosh Kumar

Abstract: Dielectric integration of layered semiconductors is a prerequisite for fabricating high-quality optoelectronic, valleytronic, and quantum-photonic devices. While hexagonal boron nitride (hBN) is the current benchmark dielectric, exploration of the most suitable dielectric materials covering the complete substrates continues to expand. This work demonstrates the formation of high optical-quality ex… ▽ More Dielectric integration of layered semiconductors is a prerequisite for fabricating high-quality optoelectronic, valleytronic, and quantum-photonic devices. While hexagonal boron nitride (hBN) is the current benchmark dielectric, exploration of the most suitable dielectric materials covering the complete substrates continues to expand. This work demonstrates the formation of high optical-quality excitons in two widely explored layered semiconductors, WSe$_2$ and WS$_2$, integrated into polyimide (PI) thin films of thicknesses $\approx$500 nm. The photoluminescence (PL) studies at $T$ = 296 K show the formation of neutral excitons $\left(X^0\right)$ and trions in fully-PI-encapsulated 1L-WSe$_2$ with 2-sigma ($2σ$) spatial-inhomogeneity of 4.5 (3.4) meV in $X^0$ emission energy (linewidth), which is $\approx$1/3rd (1/5th), respectively, that of inhomogeneity measured in fully-hBN-encapsulated 1L-WSe$_2$. A smaller $2σ$ of 2.1 (2.3) meV in $X^0$ emission energy (linewidth) has been shown for fully-PI-encapsulated 1L-WS$_2$. Polarization-resolved and excitation power-dependent PL measurements of PI-isolated 1L-TMDs at $T$ = 4 K further reveal formations of high-quality neutral-biexcitons and negatively-charged biexcitons, with degrees of valley-polarization up to 21$\%$ under non-resonant excitation. Furthermore, the fully-PI-encapsulated 1L-WSe$_2$ also hosts single quantum emitters with narrow linewidths and high-spectral stability. This work indicates that PI thin films may serve the purpose of high-quality dielectric material for integrating the layered materials on a wafer scale. △ Less

Submitted 21 April, 2025; originally announced April 2025.

Comments: 5 Figures and 3 Supplementary Figures

Role of the Direct-to-Indirect Bandgap Crossover in the 'Reverse' Energy Transfer Process

Authors: Gayatri, Mehdi Arfaoui, Debashish Das, Tomasz Kazimierczuk, Natalia Zawadzka, Takashi Taniguchi, Kenji Watanabe, Adam Babinski, Saroj K. Nayak, Maciej R. Molas, Arka Karmakar

Abstract: Energy transfer (ET) is a dipole-dipole interaction, mediated by the virtual photon. Traditionally, ET happens from the higher (donor) to lower bandgap (acceptor) material. However, in some rare instances, a 'reverse' ET can happen from the lower-to-higher bandgap material depending on the strong overlap between the acceptor photoluminescence (PL) and the donor absorption spectra. In this work, we… ▽ More Energy transfer (ET) is a dipole-dipole interaction, mediated by the virtual photon. Traditionally, ET happens from the higher (donor) to lower bandgap (acceptor) material. However, in some rare instances, a 'reverse' ET can happen from the lower-to-higher bandgap material depending on the strong overlap between the acceptor photoluminescence (PL) and the donor absorption spectra. In this work, we report a reverse ET process from the lower bandgap MoS2 to higher bandgap WS2, due to the near 'resonant' overlap between the MoS2 B and WS2 A excitonic levels. Changing the MoS2 bandgap from direct-to-indirect by increasing the layer number results in a reduced ET rate, evident by the quenching of the WS2 PL emission. We also find that, at 300 K the estimated ET timescale of around 45 fs is faster than the reported thermalization of the MoS2 excitonic intervalley scattering (K+ to K-) time and comparable with the interlayer charge transfer time. △ Less

Submitted 17 April, 2025; originally announced April 2025.

Observation of the Axion quasiparticle in 2D MnBi$_2$Te$_4$

Authors: Jian-Xiang Qiu, Barun Ghosh, Jan Schütte-Engel, Tiema Qian, Michael Smith, Yueh-Ting Yao, Junyeong Ahn, Yu-Fei Liu, Anyuan Gao, Christian Tzschaschel, Houchen Li, Ioannis Petrides, Damien Bérubé, Thao Dinh, Tianye Huang, Olivia Liebman, Emily M. Been, Joanna M. Blawat, Kenji Watanabe, Takashi Taniguchi, Kin Chung Fong, Hsin Lin, Peter P. Orth, Prineha Narang, Claudia Felser , et al. (10 additional authors not shown)

Abstract: In 1978, Wilczek and Weinberg theoretically discovered a new boson-the Axion-which is the coherent oscillation of the $θ$ field in QCD. Its existence can solve multiple fundamental questions including the strong CP problem of QCD and the dark matter. However, its detection is challenging because it has almost no interaction with existing particles. Similar $θ$ has been introduced to condensed matt… ▽ More In 1978, Wilczek and Weinberg theoretically discovered a new boson-the Axion-which is the coherent oscillation of the $θ$ field in QCD. Its existence can solve multiple fundamental questions including the strong CP problem of QCD and the dark matter. However, its detection is challenging because it has almost no interaction with existing particles. Similar $θ$ has been introduced to condensed matter and so far studied as a static, quantized value to characterize topology of materials. But the coherent oscillation of $θ$ in condensed matter is proposed to lead to new physics directly analogous to the high-energy Axion particle, the dynamical Axion quasiparticle (DAQ). In this paper, we present the direct observation of the DAQ. By combining 2D electronic device with ultrafast pump-probe optics, we manage to measure the magnetoelectric coupling $θ$ ($θ\proptoα$) of 2D MnBi$_2$Te$_4$ with sub-picosecond time-resolution. This allows us to directly observe the DAQ by seeing a coherent oscillation of $θ$ at ~44 GHz in real time, which is uniquely induced by the out-of-phase antiferromagnetic magnon. Interestingly, in 2D MnBi$_2$Te$_4$, the DAQ arises from the magnon-induced coherent modulation of Berry curvature. Such ultrafast control of quantum wavefunction can be generalized to manipulate Berry curvature and quantum metric of other materials in ultrafast time-scale. Moreover, the DAQ enables novel quantum physics such as Axion polariton and electric control of ultrafast spin polarization, implying applications in unconventional light-matter interaction and coherent antiferromagnetic spintronics. Beyond condensed matter, the DAQ can serve as a detector of the dark matter Axion particle. We estimate the detection frequency range and sensitivity in the critically-lacking meV regime, contributing to one of the most challenging questions in fundamental physics. △ Less

Submitted 16 April, 2025; originally announced April 2025.

Electric field tunable spin-orbit gap in a bilayer graphene/WSe$_{2}$ quantum dot

Authors: Hubert Dulisch, David Emmerich, Eike Icking, Katrin Hecker, Samuel Möller, Leonie Müller, Kenji Watanabe, Takashi Taniguchi, Christian Volk, Christoph Stampfer

Abstract: We report on the investigation of proximity-induced spin-orbit coupling (SOC) in a heterostructure of bilayer graphene (BLG) and tungsten diselenide (WSe$_2$). A BLG quantum dot (QD) in the few-particle regime acts as a sensitive probe for induced SOC. Finite bias and magnetotransport spectroscopy measurements reveal a significantly enhanced SOC that decreases with the applied displacement field,… ▽ More We report on the investigation of proximity-induced spin-orbit coupling (SOC) in a heterostructure of bilayer graphene (BLG) and tungsten diselenide (WSe$_2$). A BLG quantum dot (QD) in the few-particle regime acts as a sensitive probe for induced SOC. Finite bias and magnetotransport spectroscopy measurements reveal a significantly enhanced SOC that decreases with the applied displacement field, distinguishing it from pristine BLG. We attribute this tunability to an increased layer localization of the QD states on the BLG layer distant to the WSe$_2$. Furthermore, our measurements demonstrate a reduced valley $g$-factor at larger displacement fields, consistent with a weaker lateral confinement of the QD. Our findings show evidence of the influence of WSe$_2$ across BLG layers, driven by reduced real-space confinement and increased layer localization at higher displacement fields. This study demonstrates the electrostatic tunability of spin-orbit gap in BLG/WSe$_2$ heterostructures, which is especially relevant for the field of spintronics and future spin qubit control in BLG QDs. △ Less

Submitted 16 April, 2025; originally announced April 2025.

Comments: 7 pages, 5 figures

Probing Quantum Anomalous Hall States in Twisted Bilayer WSe2 via Attractive Polaron Spectroscopy

Authors: Beini Gao, Mahdi Ghafariasl, Mahmoud Jalali Mehrabad, Tsung-Sheng Huang, Lifu Zhang, Deric Session, Pranshoo Upadhyay, Rundong Ma, Ghadah Alshalan, Daniel Gustavo Suárez Forero, Supratik Sarkar, Suji Park, Houk Jang, Kenji Watanabe, Takashi Taniguchi, Ming Xie, You Zhou, Mohammad Hafezi

Abstract: Moiré superlattices in semiconductors are predicted to exhibit a rich variety of interaction-induced topological states. However, experimental demonstrations of such topological states, apart from MoTe2 superlattices, have remained scarce. Here, we report the first optical detection of quantum anomalous Hall (QAH) states in twisted WSe2 homobilayer (tWSe2). Specifically, we employ polarization-res… ▽ More Moiré superlattices in semiconductors are predicted to exhibit a rich variety of interaction-induced topological states. However, experimental demonstrations of such topological states, apart from MoTe2 superlattices, have remained scarce. Here, we report the first optical detection of quantum anomalous Hall (QAH) states in twisted WSe2 homobilayer (tWSe2). Specifically, we employ polarization-resolved attractive polaron spectroscopy on a dual-gated, 2 degree tWSe2 and observe direct signatures of spontaneous time-reversal symmetry breaking at hole filling ν = 1. Together with a Chern number (C) measurement via Streda formula analysis, we identify this magnetized state as a topological state, characterized by C = 1. Furthermore, we demonstrate that these topological and magnetic properties are tunable via a finite displacement field, between a QAH ferromagnetic state and an antiferromagnetic state. Our findings position tWSe2 as a highly versatile, stable, and optically addressable platform for investigating topological order and strong correlations in two-dimensional landscapes. △ Less

Submitted 15 April, 2025; originally announced April 2025.

Stability diagram of layer-polarized quantum Hall states in twisted trilayer graphene

Authors: Konstantin Davydov, Daochen Long, Jack Alexander Tavakley, Kenji Watanabe, Takashi Taniguchi, Ke Wang

Abstract: In the twisted trilayer graphene (tTLG) platform, the rich beating patterns between the three graphene layers give rise to a plethora of new length scales and reconstructed electronic bands arising from the emergent moiré and moiré-of-moiré superlattices. The co-existing lattices and superlattices interact and compete with each other to determine the overall transport properties of tTLG, the hiera… ▽ More In the twisted trilayer graphene (tTLG) platform, the rich beating patterns between the three graphene layers give rise to a plethora of new length scales and reconstructed electronic bands arising from the emergent moiré and moiré-of-moiré superlattices. The co-existing lattices and superlattices interact and compete with each other to determine the overall transport properties of tTLG, the hierarchy of which can be electrostatically controlled by tuning the out-of-plane charge distribution or layer polarization. In this work, we measure the stability diagram of layer-polarized quantum Hall states in tTLG by systematically mapping out layer-specific Chern numbers in each layer, and intra- and interlayer Chern transitions as a function of displacement field D and total carrier density n. In contrast to twisted bilayer systems, the rich interplay between the three atomic layers gives rise to a complex layer-polarized stability diagram with unconventional transport features that evolve rapidly with electric and magnetic fields. The stability diagram quantitatively characterizes the interlayer screening and charge distribution in tTLG with implication of strong inter-atomic-layer Coulomb coupling. Our work provides comprehensive guidance and insights into predicting and controlling layer-polarization and interlayer transitions in tTLG, and for tuning the individual role and interactions of each participating constituent towards novel material properties. △ Less

Submitted 12 April, 2025; originally announced April 2025.

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

Authors: Bozo Vareskic, Finn G. Kennedy, Takashi Taniguchi, Kenji Watanabe, Kenji Yasuda, Daniel C. Ralph

Abstract: We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene. Despite the nominally-symmetric tunnel-junction structure, these devices can exhibit substantial electroresistance upon reversing the ferroelectric polarization.… ▽ More We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene. Despite the nominally-symmetric tunnel-junction structure, these devices can exhibit substantial electroresistance upon reversing the ferroelectric polarization. The magnitude and sign of tunneling electroresistance are tunable by bias and gate voltage. We show that this behavior can be understood within a simple tunneling model that takes into account the quantum capacitance of the graphene electrodes, so that the tunneling densities of states in the electrodes are separately modified as a function of bias and gate voltage. △ Less

Submitted 11 April, 2025; originally announced April 2025.

Control of atomic reconstruction and quasi-1D excitons in strain-engineered moiré heterostructures

Authors: Shen Zhao, Zhijie Li, Zakhar A. Iakovlev, Peirui Ji, Fanrong Lin, Xin Huang, Kenji Watanabe, Takashi Taniguchi, Mikhail M. Glazov, Anvar S. Baimuratov, Alexander Högele

Abstract: In two-dimensional nearly commensurate heterostructures, strain plays a critical role in shaping electronic behavior. While previous studies have focused on random strain introduced during fabrication, achieving controlled structural design has remained challenging. Here, we demonstrate the deterministic creation of one-dimensional arrays from initially zero-dimensional triangular moiré patterns i… ▽ More In two-dimensional nearly commensurate heterostructures, strain plays a critical role in shaping electronic behavior. While previous studies have focused on random strain introduced during fabrication, achieving controlled structural design has remained challenging. Here, we demonstrate the deterministic creation of one-dimensional arrays from initially zero-dimensional triangular moiré patterns in MoSe$_2$-WSe$_2$ heterobilayers. This transformation, driven by the interplay of uniaxial strain and atomic reconstruction, results in one-dimensional confinement of interlayer excitons within domain walls, exhibiting near-unity linearly polarized emission related to the confinement-induced symmetry breaking. The width of the domain walls--and consequently the degree of exciton confinement--can be precisely tuned by the interlayer twist angle. By applying out-of-plane electric field, the confined excitons exhibit energy shifts exceeding 100~meV and changes in the fine-structure splitting by up to a factor of two. Our work demonstrates the potential of strain engineering for constructing designer moiré systems with programmable quantum properties, paving the way for future optoelectronic applications. △ Less

Submitted 11 April, 2025; originally announced April 2025.

Stacking-induced ferroelectricity in tetralayer graphene

Authors: Amit Singh, Shuigang Xu, Patrick Johansen Sarsfield, Pablo Diaz Nunez, Ziwei Wang, Sergey Slizovskiy, Nicholas Kay, Jun Yin, Yashar Mayamei, Takashi Taniguchi, Kenji Watanabe, Qian Yang, Kostya S. Novoselov, Vladimir I. Falko, Artem Mishchenko

Abstract: Recent studies have reported emergent ferroelectric behavior in twisted or moiré-engineered graphene-based van der Waals heterostructures, yet the microscopic origin of this effect remains under debate. Pristine mono- or few-layer graphene lacks a permanent dipole due to its centrosymmetric lattice, making the emergence of ferroelectricity unlikely. However, mixed-stacked graphene, such as the ABC… ▽ More Recent studies have reported emergent ferroelectric behavior in twisted or moiré-engineered graphene-based van der Waals heterostructures, yet the microscopic origin of this effect remains under debate. Pristine mono- or few-layer graphene lacks a permanent dipole due to its centrosymmetric lattice, making the emergence of ferroelectricity unlikely. However, mixed-stacked graphene, such as the ABCB tetralayer configuration, breaks both inversion and mirror symmetry and has been theoretically predicted to support electrically switchable dipoles. ABCB graphene represents the simplest natural graphene polytype exhibiting intrinsic out-of-plane polarization, arising from asymmetric charge carrier distribution across its layers. Here, we report robust ferroelectric behavior in dual-gated, non-aligned ABCB tetralayer graphene encapsulated in hexagonal boron nitride. The device exhibits pronounced hysteresis in resistance under both top and bottom gate modulation, with the effect persisting up to room temperature. This hysteresis originates from reversible layer-polarized charge reordering, driven by gate-induced transitions between ABCB and BCBA stacking configurations -- without requiring moiré superlattices. Our findings establish stacking-order-induced symmetry breaking as a fundamental route to electronic ferroelectricity in graphene and open pathways for non-volatile memory applications based on naturally occurring mixed-stacked multilayer graphene. △ Less

Submitted 10 April, 2025; originally announced April 2025.

Signatures of unconventional superconductivity near reentrant and fractional quantum anomalous Hall insulators

Authors: Fan Xu, Zheng Sun, Jiayi Li, Ce Zheng, Cheng Xu, Jingjing Gao, Tongtong Jia, Kenji Watanabe, Takashi Taniguchi, Bingbing Tong, Li Lu, Jinfeng Jia, Zhiwen Shi, Shengwei Jiang, Yuanbo Zhang, Yang Zhang, Shiming Lei, Xiaoxue Liu, Tingxin Li

Abstract: Two-dimensional moiré Chern bands provide an exceptional platform for exploring a variety of many-body electronic liquid and solid phases at zero magnetic field within a lattice system. One particular intriguing possibility is that flat Chern bands can, in principle, support exotic superconducting phases together with fractional topological phases. Here, we report the observation of integer and fr… ▽ More Two-dimensional moiré Chern bands provide an exceptional platform for exploring a variety of many-body electronic liquid and solid phases at zero magnetic field within a lattice system. One particular intriguing possibility is that flat Chern bands can, in principle, support exotic superconducting phases together with fractional topological phases. Here, we report the observation of integer and fractional quantum anomalous Hall effects, the reentrant quantum anomalous Hall effect, and superconductivity within the first moiré Chern band of twisted bilayer MoTe2. The superconducting phase emerges from a normal state exhibiting anomalous Hall effects and sustains an large perpendicular critical magnetic field. Our results present the first example of superconductivity emerging within a flat Chern band that simultaneously hosts fractional quantum anomalous effects, a phenomenon never observed in any other systems. Our work expands the understanding of emergent quantum phenomena in moiré Chern bands, and offers a nearly ideal platform for engineering Majorana and parafermion zero modes in gate-controlled hybrid devices. △ Less

Submitted 9 April, 2025; originally announced April 2025.

Resistance hysteresis in twisted bilayer graphene: Intrinsic versus extrinsic effects

Authors: Ranit Dutta, Ayan Ghosh, Kenji Watanabe, Takashi Taniguchi, Anindya Das

Abstract: Hysteresis in resistance under magnetic field sweeps is a key signature for identifying magnetism in twisted bilayer graphene and similar systems. However, such sweeps can induce extrinsic thermal effects, complicating interpretations. Distinguishing intrinsic magnetic ordering from extrinsic thermal influences is crucial. In this study, we report hysteresis in the longitudinal resistance (… ▽ More Hysteresis in resistance under magnetic field sweeps is a key signature for identifying magnetism in twisted bilayer graphene and similar systems. However, such sweeps can induce extrinsic thermal effects, complicating interpretations. Distinguishing intrinsic magnetic ordering from extrinsic thermal influences is crucial. In this study, we report hysteresis in the longitudinal resistance ($(R_{xx}$)) of a near magic-angle twisted bilayer graphene (TBG) sample under an in-plane magnetic field ($(B_{||}$)). The hysteresis phase appears at the edge of the superconducting dome, diminishes deep within the superconducting regime, and reemerges near the superconducting critical temperature ($(T \sim T_c$)). The hysteresis magnitude and coercive fields strongly depend on the magnetic field sweep rate ($(dB/dt)$) and exhibit transient relaxation in time-series measurements. Notably, similar hysteresis behavior was observed in the temperature profile of the sample stage, measured using a calibrated temperature sensor under analogous magnetic field cycles, suggesting extrinsic thermal origins rather than intrinsic magnetic ordering. These findings underscore the importance of carefully distinguishing intrinsic and extrinsic effects in resistance hysteresis observed in mesoscopic van der Waals systems. △ Less

Submitted 8 April, 2025; originally announced April 2025.

Moiré enhanced flat band in rhombohedral graphene

Authors: Hongyun Zhang, Jinxi Lu, Kai Liu, Yijie Wang, Fei Wang, Size Wu, Wanying Chen, Xuanxi Cai, Kenji Watanabe, Takashi Taniguchi, Jose Avila, Pavel Dudin, Matthew D. Watson, Alex Louat, Takafumi Sato, Pu Yu, Wenhui Duan, Zhida Song, Guorui Chen, Shuyun Zhou

Abstract: The fractional quantum anomalous Hall effect (FQAHE) is a fascinating emergent quantum state characterized by fractionally charged excitations in the absence of magnetic field,which could arise from the intricate interplay between electron correlation, nontrivial topology and spontaneous time-reversal symmetry breaking. Recently, FQAHE has been realized in aligned rhombohedral pentalayer graphene… ▽ More The fractional quantum anomalous Hall effect (FQAHE) is a fascinating emergent quantum state characterized by fractionally charged excitations in the absence of magnetic field,which could arise from the intricate interplay between electron correlation, nontrivial topology and spontaneous time-reversal symmetry breaking. Recently, FQAHE has been realized in aligned rhombohedral pentalayer graphene on BN superlattice (aligned R5G/BN), where the topological flat band is modulated by the moiré potential. However, intriguingly, the FQAHE is observed only when electrons are pushed away from the moiré interface. The apparently opposite implications from these experimental observations, along with different theoretical models, have sparked intense debates regarding the role of the moiré potential. Unambiguous experimental observation of the topological flat band as well as moiré bands with energy and momentum resolved information is therefore critical to elucidate the underlying mechanism. Here by performing nanospot angle-resolved photoemission spectroscopy (NanoARPES) measurements, we directly reveal the topological flat band electronic structures of R5G, from which key hopping parameters essential for determining the fundamental electronic structure of rhombohedral graphene are extracted. Moreover, a comparison of electronic structures between aligned and non-aligned samples reveals that the moiré potential plays a pivotal role in enhancing the topological flat band in the aligned sample. Our study provides experimental guiding lines to narrow down the phase space of rhombohedral graphene, laying an important foundation for understanding exotic quantum phenomena in this emerging platform. △ Less

Submitted 8 April, 2025; originally announced April 2025.

Comments: 15 pages,4 figures

Tunable spin-orbit splitting in bilayer graphene/WSe$_2$ quantum devices

Authors: Jonas D. Gerber, Efe Ersoy, Michele Masseroni, Markus Niese, Michael Laumer, Artem O. Denisov, Hadrien Duprez, Wei Wister Huang, Christoph Adam, Lara Ostertag, Chuyao Tong, Takashi Taniguchi, Kenji Watanabe, Vladimir I. Fal'ko, Thomas Ihn, Klaus Ensslin, Angelika Knothe

Abstract: Bilayer graphene (BLG)-based quantum devices represent a promising platform for emerging technologies such as quantum computing and spintronics. However, their intrinsically weak spin-orbit coupling (SOC) presents a challenge for spin and valley manipulation, as these applications operate more efficiently in the presence of strong SOC. Integrating BLG with transition metal dichalcogenides (TMDs) s… ▽ More Bilayer graphene (BLG)-based quantum devices represent a promising platform for emerging technologies such as quantum computing and spintronics. However, their intrinsically weak spin-orbit coupling (SOC) presents a challenge for spin and valley manipulation, as these applications operate more efficiently in the presence of strong SOC. Integrating BLG with transition metal dichalcogenides (TMDs) significantly enhances SOC via proximity effects. While this enhancement has been experimentally demonstrated in 2D-layered structures, 1D and 0D-nanostructures in BLG/TMD remain unrealized, with open questions regarding device quality, SOC strength, and tunability. In this work, we investigate quantum point contacts and quantum dots in two BLG/WSe$_2$ heterostructures with different stacking orders. Across multiple devices, we demonstrate a reproducible enhancement of spin-orbit splitting ($Δ_\mathrm{SO}$) reaching values of up to $1.5\mathrm{meV}$ - more than one order of magnitude higher than in pristine bilayer graphene ($Δ_\mathrm{SO}=40-80μ\mathrm{eV}$). Furthermore, we show that the induced SOC can be tuned in situ from its maximum value to near-complete suppression by varying the perpendicular electric field, thereby controlling layer polarization. This enhancement and in situ tunability establish SOC as an efficient control mechanism for dynamic spin and valley manipulation. △ Less

Submitted 8 April, 2025; originally announced April 2025.

Gate-tunable hot electron extraction in a two-dimensional semiconductor heterojunction

Authors: Chenran Xu, Chen Xu, Jichen Zhou, Zhexu Shan, Wenjian Su, Wenbing Li, Xingqi Xu, Kenji Watanabe, Takashi Taniguchi, Shiyao Zhu, Da-Wei Wang, Yanhao Tang

Abstract: Hot carrier solar cells (HCSCs), harvesting excess energy of the hot carriers generated by above-band-gap photoexcitation, is crucial for pushing the solar cell efficiency beyond the Shockley Queisser limit, which is challenging to realize mainly due to fast hot-carrier cooling. By performing transient reflectance spectroscopy in a MoSe2/hBN/WS2 junction, we demonstrate the gate-tunable harvest of… ▽ More Hot carrier solar cells (HCSCs), harvesting excess energy of the hot carriers generated by above-band-gap photoexcitation, is crucial for pushing the solar cell efficiency beyond the Shockley Queisser limit, which is challenging to realize mainly due to fast hot-carrier cooling. By performing transient reflectance spectroscopy in a MoSe2/hBN/WS2 junction, we demonstrate the gate-tunable harvest of hot electrons from MoSe2 to WS2. By spectrally distinguishing hot-electron extraction from lattice temperature increase, we find that electrostatically doped electrons in MoSe2 can boost hot-electron extraction density (n_ET) by factor up to several tens. Such enhancement arises from interaction between hot excitons and doped electrons, which converts the excess energy of hot excitons to excitations of the Fermi sea and hence generates hot electrons. Moreover, n_ET can be further enhanced by reducing the conduction band offset with external electric field. Our results provide in-depth insights into design of HCSCs with electrostatic strategies. △ Less

Submitted 8 April, 2025; originally announced April 2025.

Comments: accepted by Nano Letters

Superconductivity, Anomalous Hall Effect, and Stripe Order in Rhombohedral Hexalayer Graphene

Authors: Erin Morissette, Peiyu Qin, Hai-Tian Wu, Naiyuan J. Zhang, K. Watanabe, T. Taniguchi, J. I. A. Li

Abstract: Unconventional superconducting phases are distinguished by broken symmetries in their order parameters. Here, we report the discovery of an exotic superconducting phase in rhombohedral hexalayer graphene at high displacement fields, marked by its coexistence with both a stripe charge order and the anomalous Hall effect. In angle-resolved transport measurements, the onset of stripe order is manifes… ▽ More Unconventional superconducting phases are distinguished by broken symmetries in their order parameters. Here, we report the discovery of an exotic superconducting phase in rhombohedral hexalayer graphene at high displacement fields, marked by its coexistence with both a stripe charge order and the anomalous Hall effect. In angle-resolved transport measurements, the onset of stripe order is manifested as thermally activated insulating behavior along one axis, with highly conductive transport along the orthogonal direction. Upon cooling, superconductivity emerges exclusively along the high-conductivity axis, forming one-dimensional-like superconducting channels. This anisotropic superconducting phase exhibits multiple first-order hysteretic transitions. Pronounced thermal hysteresis-between warming and cooling across the superconducting transition-suggests a melting transition of the underlying stripe phase. Additionally, magnetic-field-induced switching-similar to phenomena reported in tetra- and pentalayer graphene-supports the chiral nature of the superconducting state. Together, these findings identify a previously unrecognized quantum phase: a chiral superconductor embedded within a stripy Hall crystal. △ Less

Submitted 16 April, 2025; v1 submitted 7 April, 2025; originally announced April 2025.

Comments: 20 pages with method section and SI, 5 figures in main text

Optical detection of charge defects near a graphene transistor using the Stark shift of fluorescent molecules

Authors: Carlotta Ciancico, Iacopo Torre, Bernat Terrés, Alvaro Moreno, Robert Smit, Kenji Watanabe, Takashi Taniguchi, Michel Orrit, Frank Koppens, Antoine Reserbat-Plantey

Abstract: Two-dimensional crystals and their heterostructures unlock access to a class of photonic devices, bringing nanophotonics from the nanometer scale down to the atomic level where quantum effects are relevant. Single-photon emitters (SPEs) are central in quantum photonics as quantum markers linked to their electrostatic, thermal, magnetic, or dielectric environment. This aspect is exciting in two-dim… ▽ More Two-dimensional crystals and their heterostructures unlock access to a class of photonic devices, bringing nanophotonics from the nanometer scale down to the atomic level where quantum effects are relevant. Single-photon emitters (SPEs) are central in quantum photonics as quantum markers linked to their electrostatic, thermal, magnetic, or dielectric environment. This aspect is exciting in two-dimensional (2D) crystals and their heterostructures, where the environment can be abruptly modified through vertical stacking or lateral structuring, such as moiré or nano-patterned gates. To further develop 2D-based quantum photonic devices, there is a need for quantum markers that are capable of integration into various device geometries, and that can be read out individually, non-destructively, and without additional electrodes. Here, we show how to optically detect charge carrier accumulation using sub-GHz linewidth single-photon emitters coupled to a graphene device. We employ the single molecule Stark effect, sensitive to the electric fields generated by charge puddles, such as those at the graphene edge. The same approach enables dynamic sensing of electronic noise, and we demonstrate the optical read-out of low-frequency white noise in a biased graphene device. The approach described here can be further exploited to explore charge dynamics in 2D heterostructures using quantum emitter markers. △ Less

Submitted 4 April, 2025; originally announced April 2025.

Comments: 4 figures

Extremely high excitonic $g$-factors in 2D crystals by alloy-induced admixing of band states

Authors: Katarzyna Olkowska-Pucko, Tomasz Woźniak, Elena Blundo, Natalia Zawadzka, Łucja Kipczak, Paulo E. Faria Junior, Jan Szpakowski, Grzegorz Krasucki, Salvatore Cianci, Diana Vaclavkova, Dipankar Jana, Piotr Kapuściński, Magdalena Grzeszczyk, Daniele Cecchetti, Giorgio Pettinari, Igor Antoniazzi, Zdeněk Sofer, Iva Plutnarová, Kenji Watanabe, Takashi Taniguchi, Clement Faugeras, Marek Potemski, Adam Babiński, Antonio Polimeni, Maciej R. Molas

Abstract: Monolayers (MLs) of semiconducting transition metal dichalcogenides (\mbox{S-TMDs}) emit light very efficiently and display rich spin-valley physics, with gyromagnetic ($g$-) factors of about -4. Here, we investigate how these properties can be tailored by alloying. Magneto-optical spectroscopy is used to reveal the peculiar properties of excitonic complexes in Mo$_{x}$W$_{1-x}$Se$_2$ MLs with dif… ▽ More Monolayers (MLs) of semiconducting transition metal dichalcogenides (\mbox{S-TMDs}) emit light very efficiently and display rich spin-valley physics, with gyromagnetic ($g$-) factors of about -4. Here, we investigate how these properties can be tailored by alloying. Magneto-optical spectroscopy is used to reveal the peculiar properties of excitonic complexes in Mo$_{x}$W$_{1-x}$Se$_2$ MLs with different Mo and W concentrations. We show that the alloys feature extremely high $g$-factors for neutral excitons, that change gradually with the composition up to reaching values of the order of -10 for $x \approx 0.2$. First-principles calculations corroborate the experimental findings and provide evidence that alloying in S-TMDs results in a non-trivial band structure engineering, being at the origin of the high $g$-factors. The theoretical framework also suggests a higher strain sensitivity of the alloys, making them promising candidates for tailor-made optoelectronic devices. △ Less

Submitted 29 March, 2025; originally announced March 2025.

Comments: 9 pages, 5 figures, SM

Optical control of orbital magnetism in magic angle twisted bilayer graphene

Authors: Eylon Persky, Minhao He, Jiaqi Cai, Takashi Taniguchi, Kenji Watanabe, Xiaodong Xu, Aharon Kapitulnik

Abstract: Flat bands in graphene-based moiré structures host a wide range of emerging strongly correlated and topological phenomena. Optically probing and controlling them can reveal important information such as symmetry and dynamics, but have so far been challenging due to the small energy gap compared to optical wavelengths. Here, we report near infrared optical control of orbital magnetism and associate… ▽ More Flat bands in graphene-based moiré structures host a wide range of emerging strongly correlated and topological phenomena. Optically probing and controlling them can reveal important information such as symmetry and dynamics, but have so far been challenging due to the small energy gap compared to optical wavelengths. Here, we report near infrared optical control of orbital magnetism and associated anomalous Hall effects (AHE) in a magic angle twisted bilayer graphene (MATBG) on monolayer WSe$_2$ device. We show that the properties of the AHE, such as hysteresis and amplitude, can be controlled by light near integer moiré fillings, where spontaneous ferromagnetism exists. By modulating the light helicity, we observe periodic modulation of the transverse resistance in a wide range of fillings, indicating light induced orbital magnetization through a large inverse Faraday effect. At the transition between metallic and AHE regimes, we also reveal large and random switching of the Hall resistivity, which are attributed to optical control of percolating cluster of magnetic domains. Our results open the door to optical manipulation of correlation and topology in MATBG and related structures. △ Less

Submitted 27 March, 2025; originally announced March 2025.

Comments: 16 pages, 9 figures

Symmetry broken states at high displacement fields in ABA trilayer graphene

Authors: Simrandeep Kaur, Unmesh Ghorai, Abhisek Samanta, Kenji Watanabe, Takashi Taniguchi, Rajdeep Sensarma, Aveek Bid

Abstract: In this Letter, we present a comprehensive study of magnetotransport in high-mobility trilayer graphene (TLG) devices under a transverse displacement field, focusing on symmetry-broken Landau levels (LLs) from monolayer-like and bilayer-like bands. A striking displacement-field-induced enhancement of the Landé g-factor is observed in the zeroth Landau level of the monolayer-like band, highlighting… ▽ More In this Letter, we present a comprehensive study of magnetotransport in high-mobility trilayer graphene (TLG) devices under a transverse displacement field, focusing on symmetry-broken Landau levels (LLs) from monolayer-like and bilayer-like bands. A striking displacement-field-induced enhancement of the Landé g-factor is observed in the zeroth Landau level of the monolayer-like band, highlighting the role of strong electron-electron interactions. Additionally, we find a rich landscape of LL crossings in the Dirac gully region, accompanied by phase transitions between spin-, gully-, and valley-polarized LLs. These experimental observations are successfully modeled using calculations based on optimized tight-binding parameters. Furthermore, our results reveal significant particle-hole asymmetry in the sequence of LLs in the Dirac gullies, attributed to differing g-factor values for electrons and holes. This asymmetry underscores the limitations of non-interacting models in capturing the complexities of strongly correlated multiband systems. This work provides new insights into the interplay of symmetry-breaking mechanisms and strong correlations in Bernal-stacked trilayer graphene, advancing our understanding of quantum transport phenomena in multiband systems. △ Less

Submitted 27 March, 2025; originally announced March 2025.

Comments: 27 pages, comments/suggestions are welcome

Broken symmetry states and Quantum Hall Ferromagnetism in decoupled twisted bilayer graphene

Authors: Vineet Pandey, Prasenjit Ghosh, Riju Pal, Sourav Paul, Abhijith M B, Kenji Watanabe, Takashi Taniguchi, Atindra Nath Pal, Vidya Kochat

Abstract: Twisted bilayer graphene (TBLG) with large twist angle is a novel 2D bilayer system with strong interlayer Coulomb interactions, whilst suppressed interlayer carrier tunneling due to momentum mismatch between the Dirac cones of individual graphene layers. This interlayer decoherence disentangles the layer degree of freedom from spin-valley space. We demonstrate the role of charge screening effects… ▽ More Twisted bilayer graphene (TBLG) with large twist angle is a novel 2D bilayer system with strong interlayer Coulomb interactions, whilst suppressed interlayer carrier tunneling due to momentum mismatch between the Dirac cones of individual graphene layers. This interlayer decoherence disentangles the layer degree of freedom from spin-valley space. We demonstrate the role of charge screening effects in electronically decoupled TBLG that determines the Landau level (LL) crossings and multicomponent Quantum Hall (QH) effect resulting from combinations of broken symmetry states with spin and valley flavors of constituent layers.The N = 0 LL at zero filling factor is characterized by a field-induced Kosterlitz-Thouless transition to an ordered ground state, consistent with predictions of intervalley coherent state of Kekulé order. Pronounced hysteresis and electron-hole asymmetry observed in the QH regime suggests pinning of low-energy topological excitations, i.e., skyrmions with spin and valley textures, at charged defects in graphene channel. △ Less

Submitted 26 March, 2025; originally announced March 2025.

Quadrupolar and Dipolar Excitons in Bilayer 2$H$-MoSe$_2$

Authors: Shun Feng, Aidan J. Campbell, Bibi Mary Francis, Hyeonjun Baek, Takashi Taniguchi, Kenji Watanabe, Iann C. Gerber, Brian D. Gerardot, Mauro Brotons-Gisbert

Abstract: We report the experimental observation of quadrupolar exciton states in the reflectance contrast spectrum of 2$H$-stacked bilayer MoSe$_2$. The application of a vertical electric field results in a quadratic energy redshift of these quadrupolar excitons, in contrast to the linear energy splitting observed in the coexisting dipolar excitons within the bilayer MoSe$_2$. We perform helicity-resolved… ▽ More We report the experimental observation of quadrupolar exciton states in the reflectance contrast spectrum of 2$H$-stacked bilayer MoSe$_2$. The application of a vertical electric field results in a quadratic energy redshift of these quadrupolar excitons, in contrast to the linear energy splitting observed in the coexisting dipolar excitons within the bilayer MoSe$_2$. We perform helicity-resolved reflectance contrast measurements to investigate the spin and valley configurations of the quadrupolar exciton states as a function of applied vertical electric and magnetic fields. Comparing our results with a phenomenological coupled-oscillator model indicates that the electric- and magnetic-field dependence of the quadrupolar exciton states can be attributed to the intravalley and intervalley hybridization of spin-triplet interlayer excitons with opposite permanent dipole moments, mediated by interlayer hole tunneling. These results position naturally stacked MoSe$_2$ bilayers as a promising platform to explore electric-field-tunable many-body exciton phenomena. △ Less

Submitted 25 March, 2025; originally announced March 2025.

Journal ref: Phys. Rev. Lett. 134, 166901 (2025)

Heavy fermions, mass renormalization and local moments in magic-angle twisted bilayer graphene via planar tunneling spectroscopy

Authors: Zhenyuan Zhang, Shuang Wu, Dumitru Călugăru, Haoyu Hu, Takashi Taniguchi, Kenji Wanatabe, Andrei B. Bernevig, Eva Y. Andrei

Abstract: Topological heavy fermion models[1-5] describe the flat bands in magic-angle twisted bilayer graphene (MATBG) as arising from the hybridization between localized flat-band orbitals (f-electrons) and nearly-free conduction bands (c-electrons). The interplay between these f-electrons and c-electrons is theorized to give rise to emergent phenomena, including unconventional superconductivity[6-8], non… ▽ More Topological heavy fermion models[1-5] describe the flat bands in magic-angle twisted bilayer graphene (MATBG) as arising from the hybridization between localized flat-band orbitals (f-electrons) and nearly-free conduction bands (c-electrons). The interplay between these f-electrons and c-electrons is theorized to give rise to emergent phenomena, including unconventional superconductivity[6-8], non-Fermi liquid behavior[9-11], and topologically nontrivial phases[12-14]. However, the fundamental properties of f- and c-electrons, such as their respective heavy and light effective mass and their properties under strain, need experimental verification. Here we report on the electronic inverse compressibility, effective mass, and entropy of MATBG, obtained from planar tunneling spectroscopy. Our results include the observation of electron mass renormalization, found to be consistent with the topological heavy fermion model prediction of heavy charge-one excitations away from integer fillings. Importantly, we present entropic evidence for 4-fold and 8-fold degenerate isospin local moment states emerging at temperatures of 10K and 20K, respectively, consistent with the entropy of 8 heavy-fermions flavors energetically split by the sample strain. △ Less

Submitted 22 March, 2025; originally announced March 2025.

Comments: 21 pages 8 figures

Enhanced shot noise in graphene quantum point contacts with electrostatic reconstruction

Authors: M. Garg, O. Maillet, N. L. Samuelson, T. Wang, J. Feng, L. A. Cohen, K. Watanabe, T. Taniguchi, P. Roulleau, M. Sassetti, M. Zaletel, A. F. Young, D. Ferraro, P. Roche, F. D. Parmentier

Abstract: Shot noise measurements in quantum point contacts are a powerful tool to investigate charge transport in the integer and fractional quantum Hall regime, in particular to unveil the charge, quantum statistics and tunneling dynamics of edge excitations. In this letter, we describe shot noise measurements in a graphene quantum point contact in the quantum Hall regime. At large magnetic field, the com… ▽ More Shot noise measurements in quantum point contacts are a powerful tool to investigate charge transport in the integer and fractional quantum Hall regime, in particular to unveil the charge, quantum statistics and tunneling dynamics of edge excitations. In this letter, we describe shot noise measurements in a graphene quantum point contact in the quantum Hall regime. At large magnetic field, the competition between confinement and electronic interactions gives rise to a quantum dot located at the saddle point of the quantum point contact. We show that the presence of this quantum dot leads to a $50-100~\%$ increase in the shot noise, which we attribute to correlated charge tunneling. Our results highlight the role played by the electrostatic environment in those graphene devices. △ Less

Submitted 21 March, 2025; originally announced March 2025.

Comments: Includes Supplemental Material

Entropy of strongly correlated electrons in a partially filled Landau level

Authors: Alexandre Assouline, Taige Wang, Heun Mo Yoo, Ruihua Fan, Fangyuan Yang, Ruining Zhang, Takashi Taniguchi, Kenji Watanabe, Michael P. Zaletel, Andrea F. Young

Abstract: We use high-resolution chemical potential measurements to extract the entropy of monolayer and bilayer graphene in the quantum Hall regime via the Maxwell relation $\left.\frac{dμ}{dT}\right|_N = -\left.\frac{dS}{dN}\right|_T$. Measuring the entropy from $T=300$K down to $T=200$mK, we identify the sequential emergence of quantum Hall ferromagnetism, fractional quantum Hall states (FQH), and variou… ▽ More We use high-resolution chemical potential measurements to extract the entropy of monolayer and bilayer graphene in the quantum Hall regime via the Maxwell relation $\left.\frac{dμ}{dT}\right|_N = -\left.\frac{dS}{dN}\right|_T$. Measuring the entropy from $T=300$K down to $T=200$mK, we identify the sequential emergence of quantum Hall ferromagnetism, fractional quantum Hall states (FQH), and various charge orders by comparing the measured entropy in different temperature regimes with theoretical models. At the lowest temperature of $T \approx 200$mK we perform a detailed study of the entropy near even-denominator fractional quantum Hall states in bilayer graphene, and comment on the possible topological origin of the observed excess entropy. △ Less

Submitted 20 March, 2025; originally announced March 2025.

Simultaneous transport and tunneling spectroscopy of moiré graphene: Distinct observation of the superconducting gap and signatures of nodal superconductivity

Authors: Jeong Min Park, Shuwen Sun, Kenji Watanabe, Takashi Taniguchi, Pablo Jarillo-Herrero

Abstract: Understanding the nature of superconductivity in magic-angle graphene remains challenging. A key difficulty lies in discerning the different energy scales in this strongly interacting system, particularly the superconducting gap. Here, we report the first simultaneous tunneling spectroscopy and transport measurements of magic-angle graphene, providing a novel approach to probe the superconducting… ▽ More Understanding the nature of superconductivity in magic-angle graphene remains challenging. A key difficulty lies in discerning the different energy scales in this strongly interacting system, particularly the superconducting gap. Here, we report the first simultaneous tunneling spectroscopy and transport measurements of magic-angle graphene, providing a novel approach to probe the superconducting state. This approach allows us to identify two coexisting V-shaped tunneling gaps with different energy scales: a distinct low-energy superconducting gap that vanishes at the superconducting critical temperature and magnetic field, and a higher-energy pseudogap. The superconducting tunneling spectra display a linear gap-filling behavior with temperature and magnetic field and exhibit the Volovik effect, consistent with a nodal order parameter. Our work reveals the unconventional nature of the superconducting gap in magic-angle graphene and establishes an experimental framework for multidimensional investigation of tunable quantum materials. △ Less

Submitted 20 March, 2025; originally announced March 2025.

Comments: 18 pages, 5 figures

Quasiparticle gap renormalization driven by internal and external screening in WS$_2$ device

Authors: Chakradhar Sahoo, Yann in 't Veld, Alfred J. H. Jones, Zhihao Jiang, Greta Lupi, Paulina E. Majchrzak, Kimberly Hsieh, Kenji Watanabe, Takashi Taniguchi, Philip Hofmann, Jill A. Miwa, Yong P. Chen, Malte Rösner, Søren Ulstrup

Abstract: The electronic band gap of a two-dimensional semiconductor within a device architecture is sensitive to variations in screening properties of adjacent materials in the device and to gate-controlled doping. Here, we employ micro-focused angle resolved photoemission spectroscopy to separate band gap renormalization effects stemming from environmental screening and electron-doping during \textit{in s… ▽ More The electronic band gap of a two-dimensional semiconductor within a device architecture is sensitive to variations in screening properties of adjacent materials in the device and to gate-controlled doping. Here, we employ micro-focused angle resolved photoemission spectroscopy to separate band gap renormalization effects stemming from environmental screening and electron-doping during \textit{in situ} gating of a single-layer WS$_{2}$ device. The WS$_{2}$ is supported on hBN and contains a section that is exposed to vacuum and another section that is encapsulated by a graphene contact. We directly observe the doping-induced semiconductor-metal transition and band gap renormalization in the two sections of WS$_2$. Surprisingly, a larger band gap renormalization is observed in the vacuum-exposed section than in the graphene-encapsulated - and thus ostensibly better screened - section of the WS$_2$. Using $GW$ calculations, we determine that intrinsic screening due to stronger doping in vacuum exposed WS$_2$ exceeds the external environmental screening in graphene-encapsulated WS$_2$. △ Less

Submitted 20 March, 2025; originally announced March 2025.

Comments: 29 pages, 12 figures (4 figures in main text and 8 figures in supporting information)

Angular Interplay of Nematicity, Superconductivity, and Strange Metallicity in a Moiré Flat Band

Authors: Naiyuan J. Zhang, Pavel A. Nosov, Ophelia Evelyn Sommer, Yibang Wang, Kenji Watanabe, Takashi Taniguchi, Eslam Khalaf, J. I. A. Li

Abstract: Superconductivity in strongly correlated electron systems frequently exhibits broken rotational symmetry, raising fundamental questions about the underlying order parameter symmetry. In this work, we demonstrate that electronic nematicity--driven by Coulomb-mediated rotational symmetry breaking--serves as a crucial link to understanding the nature of superconductivity. Utilizing a novel framework… ▽ More Superconductivity in strongly correlated electron systems frequently exhibits broken rotational symmetry, raising fundamental questions about the underlying order parameter symmetry. In this work, we demonstrate that electronic nematicity--driven by Coulomb-mediated rotational symmetry breaking--serves as a crucial link to understanding the nature of superconductivity. Utilizing a novel framework of angle-resolved measurement, we reveal an interring angular interplay among nematicity, superconductivity, and strange metallicity in magic-angle twisted trilayer graphene. By establishing a direct correlation between the preferred superconducting transport direction and the principal axis of the metallic phase, our findings place strong constrains on the symmetry of the superconducting order parameter. This work introduces a new paradigm for probing the microscopic mechanisms governing superconductivity in strongly interacting two-dimensional systems. △ Less

Submitted 19 March, 2025; originally announced March 2025.

Comments: 8 pages and 4 figures for main text. 10 pages and 9 figures for method section

Quasi-$Φ_0$-periodic supercurrent at quantum Hall transitions

Authors: Ivan Villani, Matteo Carrega, Alessandro Crippa, Elia Strambini, Francesco Giazotto, Vaidotas Miseikis, Camilla Coletti, Fabio Beltram, Kenji Watanabe, Takashi Taniguchi, Stefan Heun, Sergio Pezzini

Abstract: The combination of superconductivity and quantum Hall (QH) effect is regarded as a key milestone in advancing topological quantum computation in solid-state systems. Recent quantum interference studies suggest that QH edge states can effectively mediate a supercurrent across high-quality graphene weak links. In this work we report the observation of a supercurrent associated with transitions betwe… ▽ More The combination of superconductivity and quantum Hall (QH) effect is regarded as a key milestone in advancing topological quantum computation in solid-state systems. Recent quantum interference studies suggest that QH edge states can effectively mediate a supercurrent across high-quality graphene weak links. In this work we report the observation of a supercurrent associated with transitions between adjacent QH plateaus, where transport paths develop within the compressible two-dimensional bulk. We employ a back-gated graphene Josephson junction, comprising high-mobility CVD-grown graphene encapsulated in hexagonal Boron Nitride (hBN) and contacted by Nb leads. Superconducting pockets are detected persisting beyond the QH onset, up to 2.4 T, hence approaching the upper critical field of the Nb contacts. We observe an approximate $Φ_0=h/2e$ periodicity of the QH-supercurrent as a function of the magnetic field, indicating superconducting interference in a proximitized percolative phase. These results provide a promising experimental platform to investigate the transport regime of percolative supercurrents, leveraging the flexibility of van der Waals devices. △ Less

Submitted 19 March, 2025; originally announced March 2025.

In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching

Authors: Hitesh Agarwal, Antoine Reserbat-Plantey, David Barcons Ruiz, Karuppasammy Soundarapandian, Geng Li, Vahagn Mkhitaryan, Johann Osmond, Helena Lozano, Kenji Watanabe, Takashi Taniguchi, Petr Stepanov, Frank. H. L. Koppens, Roshan Krishna Kumar

Abstract: Van der Waals heterostructures are at the forefront in materials heterostructure engineering, offering the ultimate control in layer selectivity and capability to combine virtually any material. Hexagonal boron nitride (hBN), the most commonly used dielectric material, has proven indispensable in this field, allowing the encapsulation of active 2D materials preserving their exceptional electronic… ▽ More Van der Waals heterostructures are at the forefront in materials heterostructure engineering, offering the ultimate control in layer selectivity and capability to combine virtually any material. Hexagonal boron nitride (hBN), the most commonly used dielectric material, has proven indispensable in this field, allowing the encapsulation of active 2D materials preserving their exceptional electronic quality. However, not all device applications require full encapsulation but rather require open surfaces, or even selective patterning of hBN layers. Here, we report on a procedure to engineer top hBN layers within van der Waals heterostructures while preserving the underlying active 2D layers. Using a soft selective SF6 etching combined with a series of pre and post-etching treatments, we demonstrate that pristine surfaces can be exposed with atomic flatness while preserving the active layers electronic quality. We benchmark our technique using graphene encapsulated with hBN Hall bar devices. Using Raman spectroscopy combined with quantum transport, we show high quality can be preserved in etched regions by demonstrating low temperature carrier mobilities of 200,000 cm2Vs-1, ballistic transport probed through magnetic focusing, and intrinsic room temperature phonon-limited mobilities. Atomic force microscopy brooming and O2 plasma cleaning are identified as key pre-etching steps to obtaining pristine open surfaces while preserving electronic quality. The technique provides a clean method for opening windows into mesoscopic van der Waals devices that can be used for local probe experiments, patterning top hBN in situ, and exposing 2D layers to their environment for sensing applications. △ Less

Submitted 18 March, 2025; originally announced March 2025.