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Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field
Authors:
M. Bozkurt,
M. R. Mahani,
P. Studer,
J. -M. Tang,
S. R. Schofield,
N. J. Curson,
M. E Flatte,
A. Yu. Silov,
C. F. Hirjibehedin,
C. M. Canali,
P. M. Koenraad
Abstract:
We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. T…
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We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. These experimental results are supported by theoretical calculations based on a tightbinding model of Mn acceptors in GaAs. For Mn acceptors on the (110) surface and the subsurfaces immediately underneath, we find that an applied magnetic field modifies significantly the magnetic anisotropy landscape. However the acceptor hole wavefunction is strongly localized around the Mn and the LDOS is quite independent of the direction of the Mn magnetic moment. On the other hand, for Mn acceptors placed on deeper layers below the surface, the acceptor hole wavefunction is more delocalized and the corresponding LDOS is much more sensitive on the direction of the Mn magnetic moment. However the magnetic anisotropy energy for these magnetic impurities is large (up to 15 meV), and a magnetic field of 10 T can hardly change the landscape and rotate the direction of the Mn magnetic moment away from its easy axis. We predict that substantially larger magnetic fields are required to observe a significant field-dependence of the tunneling current for impurities located several layers below the GaAs surface.
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Submitted 22 April, 2013; v1 submitted 11 April, 2013;
originally announced April 2013.
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Onset of ferromagnetism in low-doped GaMnAs
Authors:
B. L. Sheu,
R. C. Myers,
J. -M. Tang,
N. Samarth,
D. D. Awschalom,
P. Schiffer,
M. E. Flatté
Abstract:
We develop a quantitatively predictive theory for impurity-band ferromagnetism in the low-doping regime of GaMnAs and compare with experimental measurements of a series of samples whose compositions span the transition from paramagnetic insulating to ferromagnetic conducting behavior. The theoretical Curie temperatures depend sensitively on the local fluctuations in the Mn-hole binding energy, w…
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We develop a quantitatively predictive theory for impurity-band ferromagnetism in the low-doping regime of GaMnAs and compare with experimental measurements of a series of samples whose compositions span the transition from paramagnetic insulating to ferromagnetic conducting behavior. The theoretical Curie temperatures depend sensitively on the local fluctuations in the Mn-hole binding energy, which originates from disorder in the Mn distribution as well as the presence of As antisite defects. The experimentally-determined hopping energy at the Curie temperature is roughly constant over a series of samples whose conductivities vary more than 10^4 and whose hole concentrations vary more than 10^2. Thus in this regime the hopping energy is an excellent predictor of the Curie temperature for a sample, in agreement with the theory.
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Submitted 8 August, 2007;
originally announced August 2007.
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Spatial structure of Mn-Mn acceptor pairs in GaAs
Authors:
A. M. Yakunin,
A. Yu. Silov,
P. M. Koenraad,
J. -M. Tang,
M. E. Flatté,
W. Van Roy,
J. De Boeck,
J. H. Wolter
Abstract:
The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acce…
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The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high doping levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn $δ$-doped layers grown on differently oriented substrates.
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Submitted 24 May, 2005; v1 submitted 23 May, 2005;
originally announced May 2005.
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Spatial structure of an individual Mn acceptor in GaAs
Authors:
A. M. Yakunin,
A. Yu. Silov,
P. M. Koenraad,
J. H. Wolter,
W. Van Roy,
J. De Boeck,
J. -M. Tang,
M. E. Flatte
Abstract:
The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs c…
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The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs crystal produces the cross-like shape for the hole wave-function. Thus the coupling between Mn dopants in GaMnAs mediated by such holes will be highly anisotropic.
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Submitted 1 February, 2004;
originally announced February 2004.
