-
Decomposition of general grain boundaries
Authors:
Wei Wan,
Junwen Deng,
Changxin Tang
Abstract:
As a central part of microstructure evolution, grain boundary (GB) migration is believed to be both monolithic and unidirectional. But here, we introduce the concept of GB decomposition: one GB separates into two new GBs by controlling the Peach-Koehler forces on its disconnections. Molecular dynamics simulation is used to reveal the disconnection mechanisms and direction-dependent motion behavior…
▽ More
As a central part of microstructure evolution, grain boundary (GB) migration is believed to be both monolithic and unidirectional. But here, we introduce the concept of GB decomposition: one GB separates into two new GBs by controlling the Peach-Koehler forces on its disconnections. Molecular dynamics simulation is used to reveal the disconnection mechanisms and direction-dependent motion behaviors associated with the reversible decomposition of a nickel Σ7 general GB. We also observed a decomposition-like process in a high-energy diffraction microscopy (HEDM) dataset of high purity nickel polycrystal (Science 2021, 374, 189-193), and performed HEDM-data-based simulation to confirm it. The decomposition should be considered as a new GB migration behavior, based on its particularity and potential universality.
△ Less
Submitted 1 July, 2025;
originally announced July 2025.
-
Nonlinear time-reversal symmetry breaking in kagome spin ice HoAgGe
Authors:
Kan Zhao,
Hao Deng,
Hua Chen,
Nvsen Ma,
Noah Oefele,
Jiesen Guo,
Xueling Cui,
Chen Tang,
Matthias J. Gutmann,
Thomas Mueller,
Yixi Su,
Vladimir Hutanu,
Changqing Jin,
Philipp Gegenwart
Abstract:
Kagome spin ice is an intriguing class of spin systems constituted by in-plane Ising spins with ferromagnetic interaction residing on the kagome lattice, theoretically predicted to host a plethora of magnetic transitions and excitations. In particular, different variants of kagome spin ice models can exhibit different sequences of symmetry breaking upon cooling from the paramagnetic to the fully o…
▽ More
Kagome spin ice is an intriguing class of spin systems constituted by in-plane Ising spins with ferromagnetic interaction residing on the kagome lattice, theoretically predicted to host a plethora of magnetic transitions and excitations. In particular, different variants of kagome spin ice models can exhibit different sequences of symmetry breaking upon cooling from the paramagnetic to the fully ordered ground state. Recently, it has been demonstrated that the frustrated intermetallic HoAgGe stands as a faithful solid-state realization of kagome spin ice. Here we use single crystal neutron diffuse scattering to map the spin ordering of HoAgGe at various temperatures more accurately and surprisingly find that the ordering sequence appears to be different from previously known scenarios: From the paramagnetic state, the system first enters a partially ordered state with fluctuating magnetic charges, in contrast to a charge-ordered paramagnetic phase before reaching the fully ordered state. Through state-of-the-art Monte Carlo simulations and scaling analyses using a quasi-2D model for the distorted Kagome spin ice in HoAgGe, we elucidate a single three-dimensional (3D) XY phase transition into the ground state with broken time-reversal symmetry (TRS). However, the 3D XY transition has a long crossover tail before the fluctuating magnetic charges fully order. More interestingly, we find both experimentally and theoretically that the TRS breaking phase of HoAgGe features an unusual, hysteretic response: In spite of their vanishing magnetization, the two time-reversal partners are distinguished and selected by a nonlinear magnetic susceptibility tied to the kagome ice rule. Our discovery not only unveils a new symmetry breaking hierarchy of kagome spin ice, but also demonstrates the potential of TRS-breaking frustrated spin systems for information technology applications.
△ Less
Submitted 28 May, 2025;
originally announced May 2025.
-
Shubnikov-de Haas quantum oscillations with large spin splitting in highmobility Al0.8Ga0.2Sb/InAs/ Al0.8Ga0.2Sb quantum-well heterostructures
Authors:
Zhenghang Zhi,
Hanzhi Ruan,
Jiuming Liu,
Xinpeng Li,
Yong Zhang,
Qi Yao,
Chenjia Tang,
Yujie Xiao,
Xufeng Kou
Abstract:
We report the epitaxial growth of high-quality Al0.8Ga0.2Sb-InAs-Al0.8Ga0.2Sb quantum well films featured by high carrier mobility and strong spin-orbit coupling. By appropriately optimizing the Al-to-Ga ratio in the AlGaSb barrier layer, the quantum confinement of the heterostructure is significantlyenhanced, which results in both an ultra-high electron mobility of 924000 cm2/Vs and a giant magne…
▽ More
We report the epitaxial growth of high-quality Al0.8Ga0.2Sb-InAs-Al0.8Ga0.2Sb quantum well films featured by high carrier mobility and strong spin-orbit coupling. By appropriately optimizing the Al-to-Ga ratio in the AlGaSb barrier layer, the quantum confinement of the heterostructure is significantlyenhanced, which results in both an ultra-high electron mobility of 924000 cm2/Vs and a giant magnetoresistance ratio of 365000 at low temperatures. Meanwhile, pronounced Shubnikov-deHaas quantum oscillations persist up to 30 K, and their single-frequency feature indicates a well defined Fermi surface without subband mixing in the two-dimensional electron gas channel. Moreover, the large effective g-factor of 12.93 leads to the observation of Zeeman splitting at large magnetic fields. Our results validate the AlGaSb/InAs quantum well heterostructures as a suitable candidate for constructing energy-efficient topological spintronic devices.
△ Less
Submitted 17 May, 2025;
originally announced May 2025.
-
Recent progress on electron- and magnon-mediated torques
Authors:
Jia-Min Lai,
Bingyue Bian,
Zhonghai Yu,
Kaiwei Guo,
Yajing Zhang,
Pengnan Zhao,
Xiaoqian Zhang,
Chunyang Tang,
Jiasen Cao,
Zhiyong Quan,
Fei Wang,
Xiaohong Xu
Abstract:
The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic random-access memory due to its ultrafast switching speed and low power consumption. This review systematically explores the generation and switching mechanisms o…
▽ More
The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic random-access memory due to its ultrafast switching speed and low power consumption. This review systematically explores the generation and switching mechanisms of electron-mediated torques (including both conventional SOTs and orbital torques) and magnon-mediated torques. We discuss key materials that enable these effects: heavy metals, topological insulators, low-crystal-symmetry materials, non-collinear antiferromagnets, and altermagnets for conventional SOTs; 3d, 4d, and 5d transition metals for orbital torques; and antiferromagnetic insulator NiO- and multiferroic BiFeO3-based sandwich structures for magnon torques. We emphasize that although key components of SOT devices have been demonstrated, numerous promising materials and critical questions regarding their underlying mechanisms remain to be explored. Therefore, this field represents a dynamic and rapidly evolving frontier in spintronics, offering significant potential for advancing next-generation information storage and computational technologies.
△ Less
Submitted 14 May, 2025;
originally announced May 2025.
-
Tuning Charge Density Wave in the Transition from Magnetically Frustrated Conductor to Ferrimagnetic Insulator in Carbon Nanowire within Boron Nitride Nanotube
Authors:
Chi Ho Wong,
Zong Liang Guo,
King Cheong Lam,
Chun Pong Chau,
Wing Yu Chan,
Chak-yin Tang,
Yuen Hong Tsang,
Leung Yuk Frank Lam,
Xijun Hu
Abstract:
The emergence of exotic charge density wave (CDW) alongside ferrimagnetism materials opens exciting new possibilities for quantum switching, particularly in field-tuning CDW electronics. However, these two phenomena often compete and rely heavily on strong electronic correlations. While carbon nanowire arrays have been experimentally shown to exhibit ferromagnetism above 400 K, our research shows…
▽ More
The emergence of exotic charge density wave (CDW) alongside ferrimagnetism materials opens exciting new possibilities for quantum switching, particularly in field-tuning CDW electronics. However, these two phenomena often compete and rely heavily on strong electronic correlations. While carbon nanowire arrays have been experimentally shown to exhibit ferromagnetism above 400 K, our research shows that encapsulating a linear carbon chain (LCC) within zigzag boron nitride nanotubes (BNT) induces a short-range CDW state under a competing effect of ferrimagnetism and magnetic frustrations. However, for this exotic feature to occur, the LCC needs to break the symmetry along the circular plane of the BNT. Then we utilize a Monte Carlo model to identify the optimal length of LCC@BNT to tackle its size effect, while also comparing the stability of chains provided by carbon nanotubes. The shorter LCC@BNT displays a more prominent long-range CDW pattern with a tunneling barrier of 2.3 eV on the Fermi surface, transitioning into an unconventional insulator. Meanwhile, magnetic frustrations disappear, and ferrimagnetism remains stable up to 280 K. Our discovery of ferrimagnetic CDW carbyne insulators, which function without conventional periodic lattice distortion, spin-orbit coupling, or complex d and f hybridization represents a groundbreaking shift in thinking, which demonstrates that such exotic properties are not exclusive to transition metal elements. We anticipate that spin fluctuations in LCC@BNT could enable fine-tuning of the CDW pattern, and applying an electric excitation of 2.3 eV triggers an abrupt insulator-to-conductor transition for quantum switching applications.
△ Less
Submitted 10 April, 2025;
originally announced April 2025.
-
Rectification and bolometric terahertz radiation detectors based on perforated graphene structures exhibiting plasmonic resonant response
Authors:
V. Ryzhii,
C. Tang,
M. Ryzhii,
T. Otsuji,
M. S. Shur
Abstract:
We propose and evaluate the characteristics of the terahertz (THz) detectors based on perforated graphene layers (PGLs). The PGL structures constitute the interdigital in-plane arrays of the graphene microribbons (GMRs) connected by the sets of narrow constrictions, which form the graphene nanoribbon (GNR) bridges. The PGL detector operation is associated with the rectification and hot-carrier bol…
▽ More
We propose and evaluate the characteristics of the terahertz (THz) detectors based on perforated graphene layers (PGLs). The PGL structures constitute the interdigital in-plane arrays of the graphene microribbons (GMRs) connected by the sets of narrow constrictions, which form the graphene nanoribbon (GNR) bridges. The PGL detector operation is associated with the rectification and hot-carrier bolometric mechanisms. The excitation of plasmonic oscillations in the GMR-GNR arrays can reinforce these mechanisms. The room temperature PGL detector responsivity and detectivity are calculated as function of the radiation frequency and device structure parameters. The effects of the rectification and hot-carrier mechanisms are compared. The PGL THz detectors under consideration can exhibit highly competitive values of responsivity and detectivity.
△ Less
Submitted 18 June, 2025; v1 submitted 4 April, 2025;
originally announced April 2025.
-
Hot-carrier thermal breakdown and S-type current-voltage characteristics in perforated graphene structures
Authors:
V. Ryzhii,
C. Tang,
M. Ryzhii,
M. S. Shur
Abstract:
We investigate the carrier transport characteristics of perforated graphene layer (PGL) composed of arrays of interdigital coplanar graphene microribbons (GMRs) connected by graphene nanoribbon (GNR) bridges. We analyze their operation at room-temperature. Under an applied bias voltage, two-dimensional electron and hole systems (2DES and 2DHS) form in adjacent GMRs. The terminal current in these P…
▽ More
We investigate the carrier transport characteristics of perforated graphene layer (PGL) composed of arrays of interdigital coplanar graphene microribbons (GMRs) connected by graphene nanoribbon (GNR) bridges. We analyze their operation at room-temperature. Under an applied bias voltage, two-dimensional electron and hole systems (2DES and 2DHS) form in adjacent GMRs. The terminal current in these PGL structures is primarily governed by thermionic transport across the GNR bridges. As electrons and holes traverse the GNRs, they induce heating in the 2DES and 2DHS, creating a positive feedback loop between carrier heating and thermionic emission. This phenomenon, characterized as hot-carrier thermal breakdown, can give rise to S-shaped inter-GMR current-voltage characteristics. These unique transport properties make PGLs promising candidates for fast, voltage-controlled room-temperature switches and electromagnetic radiation detectors.
△ Less
Submitted 18 March, 2025;
originally announced March 2025.
-
First-principles predictions of the diversity in atomic structures and electronic properties of the reconstructed Si(111)-7x7 surface
Authors:
Yuke Song,
ShiFang Li,
PeiZe Lin,
Jin Li,
Tao Ouyang,
Chao Tang,
Chaoyu He
Abstract:
The 7x7 reconstruction of Si(111) surface is widely understood by the dimer-adatom-stacking-fault model (DAS), but the predicted metallicity of DAS contradicts experimental signs of insulation. It is still challenge to predict DAS-like reconstructions by traditional method to solve such a puzzle. Here, we show that low-energy reconstructions of Si(111)-7x7 surface with (DAS-d8-T12, DAS-d8-T9H3-A,…
▽ More
The 7x7 reconstruction of Si(111) surface is widely understood by the dimer-adatom-stacking-fault model (DAS), but the predicted metallicity of DAS contradicts experimental signs of insulation. It is still challenge to predict DAS-like reconstructions by traditional method to solve such a puzzle. Here, we show that low-energy reconstructions of Si(111)-7x7 surface with (DAS-d8-T12, DAS-d8-T9H3-A, DAS-d8-T9H3-B and DAS-d8-T6H6) and without (AB-d10-T12, AB-d10-T9H3, AA-d10-T12 and AA-d10-T9H3) stacking-fault can be quickly discovered by graph theory as implemented in RG2 code for crystal structure prediction. They exhibit comparable stability to the DAS (DAS-d8-T12) model and similar STM patterns, offering a plausible explanation for the observed Si(111)-7x7 reconstruction. All these reconstructions exhibit metallic behavior in the nonmagnetic (NM) state with isolated narrow bands crossing the Fermi level in varying occupancy. And they are further confirmed as ferromagnetic (FM) metals (DAS-d8-T9H3-B), half-metals (DAS-d8-T12, AB-d10-T9H3, AA-d10-T12 and AA-d10-T9H3), half-semimetals (DAS-d8-T9H3-A and DAS-d8-T6H6) and even insulators (AB-d10-T12), depending their occupancies of the NM band structures. These findings not only demonstrate the rich electromagnetic phases of reconstructed Si(111) surfaces and their potential for spintronic applications, but also provide a plausible physical explanation for the metal-insulator transition observed on the Si(111) surface.
△ Less
Submitted 18 June, 2025; v1 submitted 15 March, 2025;
originally announced March 2025.
-
Dynamics of Baxter-Wu model
Authors:
Chen Tang,
Konstantinos Sfairopoulos,
Wanzhou Zhang,
Chengxiang Ding
Abstract:
Using Monte Carlo simulations, we investigate the dynamical properties of the Baxter-Wu (BW) model under linear quenches. For the linear cooling process, the scaling behavior of the excess defect density in the critical region aligns well with the predictions of the Kibble-Zurek (KZ) mechanism. However, the scaling behavior of the excess defect density after exiting the impulse regime does not fol…
▽ More
Using Monte Carlo simulations, we investigate the dynamical properties of the Baxter-Wu (BW) model under linear quenches. For the linear cooling process, the scaling behavior of the excess defect density in the critical region aligns well with the predictions of the Kibble-Zurek (KZ) mechanism. However, the scaling behavior of the excess defect density after exiting the impulse regime does not follow from a simple interplay between the KZ mechanism and the coarsening dynamics; the system undergoes a decay close to a power-law form with an exponent that is significantly different from the coarsening exponent observed in instantaneous quenching. For the linear heating process, we show that, if the system starts from its ground state, the relevant exponents describing the KZ mechanism are identical to those in the cooling scenario. We find that the system does not directly enter the adiabatic regime after leaving the impulse regime but instead passes through a crossover regime with an exponential decay of the excess defect density. If the initial state is ordered but not the ground state of the system, the defect density exhibits a good scaling behavior, but the relevant exponents do not conform to the predictions of the KZ mechanism.
△ Less
Submitted 29 March, 2025; v1 submitted 8 February, 2025;
originally announced February 2025.
-
Iterative variational learning of committor-consistent transition pathways using artificial neural networks
Authors:
Alberto Megías,
Sergio Contreras Arredondo,
Cheng Giuseppe Chen,
Chenyu Tang,
Benoît Roux,
Christophe Chipot
Abstract:
This contribution introduces a neural-network-based approach to discover meaningful transition pathways underlying complex biomolecular transformations in coherence with the committor function. The proposed path-committor-consistent artificial neural network (PCCANN) iteratively refines the transition pathway by aligning it to the gradient of the committor. This method addresses the challenges of…
▽ More
This contribution introduces a neural-network-based approach to discover meaningful transition pathways underlying complex biomolecular transformations in coherence with the committor function. The proposed path-committor-consistent artificial neural network (PCCANN) iteratively refines the transition pathway by aligning it to the gradient of the committor. This method addresses the challenges of sampling in molecular dynamics simulations rare events in high-dimensional spaces, which is often limited computationally. Applied to various benchmark potentials and biological processes such as peptide isomerization and protein-model folding, PCCANN successfully reproduces established dynamics and rate constants, while revealing bifurcations and alternate pathways. By enabling precise estimation of transition states and free-energy barriers, this approach provides a robust framework for enhanced-sampling simulations of rare events in complex biomolecular systems.
△ Less
Submitted 2 December, 2024;
originally announced December 2024.
-
Spin-phase transition in an array of quantum rings controlled by cavity photons
Authors:
Vidar Gudmundsson,
Vram Mughnetsyan,
Hsi-Sheng Goan,
Jeng-Da Chai,
Nzar Rauf Abdullah,
Chi-Shung Tang,
Valeriu Moldoveanu,
Andrei Manolescu
Abstract:
We model a spin-phase transition in a two-dimensional square array, or a lateral superlattice, of quantum rings in an external perpendicular homogeneous magnetic field. The electron system is placed in a circular cylindrical far-infrared photon cavity with a single circularly symmetric photon mode. Our numerical results reveal that the spin ordering of the two-dimensional electron gas in each quan…
▽ More
We model a spin-phase transition in a two-dimensional square array, or a lateral superlattice, of quantum rings in an external perpendicular homogeneous magnetic field. The electron system is placed in a circular cylindrical far-infrared photon cavity with a single circularly symmetric photon mode. Our numerical results reveal that the spin ordering of the two-dimensional electron gas in each quantum ring can be influenced or controlled by the electron-photon coupling strength and the energy of the photons. The Coulomb interaction between the electrons is described by a spin-density functional approach, but the para- and the diamagnetic electron-photon interactions are modeled via a configuration interaction formalism in a truncated many-body Fock-space, which is updated in each iteration step of the density functional approach. In the absence of external electromagnetic pulses this spin-phase transition is replicated in the orbital magnetization of the rings. The spin-phase transition can be suppressed by a strong electron-photon interaction. In addition, fluctuations in the spin configuration are found in dynamical calculations, where the system is excited by a time-dependent scheme specially fit for emphasizing the diamagnetic electron-photon interaction.
△ Less
Submitted 20 November, 2024;
originally announced November 2024.
-
Detection of terahertz radiation using topological graphene micro-nanoribbon structures with transverse plasmonic resonant cavities
Authors:
V. Ryzhii,
C. Tang,
T. Otsuji,
M. Ryzhii,
M. S. Shur
Abstract:
The lateral interdigital array of the graphene microribbons (GMRs) on the h-BN substrate connected by narrow graphene nanoribbon (GNR) bridges serves as an efficient detector of terahertz (THz) radiation. The detection is enabled by the nonlinear GNR elements providing the rectification of the THz signals. The excitation of plasmonic waves along the GMRs (transverse plasmonic oscillations) by impi…
▽ More
The lateral interdigital array of the graphene microribbons (GMRs) on the h-BN substrate connected by narrow graphene nanoribbon (GNR) bridges serves as an efficient detector of terahertz (THz) radiation. The detection is enabled by the nonlinear GNR elements providing the rectification of the THz signals. The excitation of plasmonic waves along the GMRs (transverse plasmonic oscillations) by impinging THz radiation can lead to a strong resonant amplification of the rectified signal current and substantial enhancement of the detector response. The GMR arrays with the GNR bridges s can be formed by the perforation of uniform graphene layers
△ Less
Submitted 11 November, 2024; v1 submitted 23 September, 2024;
originally announced September 2024.
-
Strain Effects in SrHfO$_{3}$ Films Grown by Hybrid Molecular Beam Epitaxy
Authors:
Patrick T. Gemperline,
Arashdeep S. Thind,
Chunli Tang,
George E. Sterbinsky,
Boris Kiefer,
Wencan Jin,
Robert F. Klie,
Ryan B. Comes
Abstract:
Perovskite oxides hetero-structures are host to a large number of interesting phenomena such as ferroelectricity and 2D-superconductivity. Ferroelectric perovskite oxides have been of significant interest due to their possible use in MOSFETs and FRAM. SrHfO$_3$ (SHO) is a perovskite oxide with pseudo-cubic lattice parameter of 4.1 $\mathring{A}$ that previous DFT calculations suggest can be stabil…
▽ More
Perovskite oxides hetero-structures are host to a large number of interesting phenomena such as ferroelectricity and 2D-superconductivity. Ferroelectric perovskite oxides have been of significant interest due to their possible use in MOSFETs and FRAM. SrHfO$_3$ (SHO) is a perovskite oxide with pseudo-cubic lattice parameter of 4.1 $\mathring{A}$ that previous DFT calculations suggest can be stabilized in a ferroelectric P4mm phase, similar to STO, when stabilized with sufficient compressive strain. Additionally, it is insulating, possesses a large band gap, and a high dielectric constant, making it an ideal candidate for oxide electronic devices. In this work, SHO films were grown by hybrid molecular beam epitaxy with a tetrakis(ethylmethylamino)hafnium(IV) source on GdScO$_3$ and TbScO$_3$ substrates. Equilibrium and strained SHO phases were characterized using X-ray diffraction, X-ray absorption spectroscopy, and scanning transmission electron microscopy to determine the perovskite phase of the strained films, with the results compared to density functional theory models of phase stability versus strain. Contrary to past reports, we find that compressively-strained SrHfO$_3$ undergoes octahedral tilt distortions and most likely takes on the I4/mcm phase with the a$^0$a$^0$c$^-$ tilt pattern.
△ Less
Submitted 19 September, 2024;
originally announced September 2024.
-
The tuning of para- and diamagnetic cavity photon excitations in a square array of quantum dots in a magnetic field
Authors:
Vidar Gudmundsson,
Vram Mughnetsyan,
Hsi-Sheng Goan,
Jeng-Da Chai,
Nzar Rauf Abdullah,
Chi-Shung Tang,
Valeriu Moldoveanu,
Andrei Manolescu
Abstract:
We employ a ``real-time'' excitation scheme to calculate the excitation spectra of a two-dimensional electron system in a square array of quantum dots placed in a circular cylindrical far-infrared photon cavity subjected to a perpendicular homogeneous external magnetic field. The Coulomb interaction of the electrons is handled via spin density functional theory and the para- and the diamagnetic pa…
▽ More
We employ a ``real-time'' excitation scheme to calculate the excitation spectra of a two-dimensional electron system in a square array of quantum dots placed in a circular cylindrical far-infrared photon cavity subjected to a perpendicular homogeneous external magnetic field. The Coulomb interaction of the electrons is handled via spin density functional theory and the para- and the diamagnetic parts of the electron-photon coupling are updated according to a configuration interaction method in each iteration of the density functional calculation. The results show that an excitation scheme built on using the symmetry of the lateral square superlattice of the dots and the cylindrical cavity produces both para- and diamagnetic resonance peaks with oscillator strengths that can be steered by the excitation pulse parameters. The excitation method breaks the conditions for the generalized Kohn theorem and allows for insight into the subband structure of the electron system and can be used both in and outside the linear response regime.
△ Less
Submitted 15 September, 2024;
originally announced September 2024.
-
Tunable interfacial Rashba spin-orbit coupling in asymmetric Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures
Authors:
Hanzhi Ruan,
Zhenghang Zhi,
Yuyang Wu,
Jiuming Liu,
Puyang Huang,
Shan Yao,
Xinqi Liu,
Chenjia Tang,
Qi Yao,
Lu Sun,
Yifan Zhang,
Yujie Xiao,
Renchao Che,
Xufeng Kou
Abstract:
The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum confinement, while the unidirectional built-in electric field from the asymmetric hetero-interfaces results in pronounced Rashba SOC strength. By tuning the Al concentrati…
▽ More
The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum confinement, while the unidirectional built-in electric field from the asymmetric hetero-interfaces results in pronounced Rashba SOC strength. By tuning the Al concentration in the top Al$_x$In$_{1-x}$Sb barrier layer, the optimal structure with $x = 0.15$ shows the largest Rashba coefficient of 0.23 eV-Angstrom. and the highest low-temperature electron mobility of 4400 cm$^2$/Vs . Quantitative investigations of the weak anti-localization effect further confirm the dominant D'yakonov-Perel (DP) spin relaxation mechanism during charge-to-spin conversion. These findings highlight the significance of quantum well engineering in shaping magneto-resistance responses, and narrow bandgap semiconductor-based heterostructures may offer a reliable platform for energy-efficient spintronic applications.
△ Less
Submitted 19 August, 2024;
originally announced August 2024.
-
Unraveling the role of Ta in the phase transition of Pb(Ta1+xSe2)2 using low-temperature Raman spectroscopy
Authors:
Yu Ma,
Chi Sin Tang,
Xiaohui Yang,
Yi Wei Ho,
Jun Zhou,
Wenjun Wu,
Shuo Sun,
Jin-Ke Bao,
Dingguan Wang,
Xiao Lin,
Magdalena Grzeszczyk,
Shijie Wang,
Mark B H Breese,
Chuanbing Cai,
Andrew T. S. Wee,
Maciej Koperski,
Zhu-An Xu,
Xinmao Yin
Abstract:
Phase engineering strategies in two-dimensional transition metal dichalcogenides (2D-TMDs) have garnered significant attention due to their potential applications in electronics, optoelectronics, and energy storage. Various methods, including direct synthesis, pressure control, and chemical doping, have been employed to manipulate structural transitions in 2D-TMDs. Metal intercalation emerges as a…
▽ More
Phase engineering strategies in two-dimensional transition metal dichalcogenides (2D-TMDs) have garnered significant attention due to their potential applications in electronics, optoelectronics, and energy storage. Various methods, including direct synthesis, pressure control, and chemical doping, have been employed to manipulate structural transitions in 2D-TMDs. Metal intercalation emerges as an effective technique to modulate phase transition dynamics by inserting external atoms or ions between the layers of 2D-TMDs, altering their electronic structure and physical properties. Here, we investigate the significant structural phase transitions in Pb(Ta1+xSe2)2 single crystals induced by Ta intercalation using a combination of Raman spectroscopy and first-principles calculations. The results highlight the pivotal role of Ta atoms in driving these transitions and elucidate the interplay between intercalation, phase transitions, and resulting electronic and vibrational properties in 2D-TMDs. By focusing on Pb(Ta1+xSe2)2 as an ideal case study and investigating like metal intercalation, this study advances understanding in the field and paves the way for the development of novel applications for 2D-TMDs, offering insights into the potential of these materials for future technological advancements.
△ Less
Submitted 8 August, 2024; v1 submitted 28 July, 2024;
originally announced July 2024.
-
Orbital origin of magnetic moment enhancement induced by charge density wave in kagome FeGe
Authors:
Shulun Han,
Linyang Li,
Chi Sin Tang,
Qi Wang,
Lingfeng Zhang,
Caozheng Diao,
Mingwen Zhao,
Shuo Sun,
Lijun Tian,
Mark B. H. Breese,
Chuanbing Cai,
Milorad V. Milosevic,
Yanpeng Qi,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
Interactions among various electronic states such as CDW, magnetism, and superconductivity are of high significance in strongly correlated systems. While significant progress has been made in understanding the relationship between CDW and superconductivity, the interplay between CDW and magnetic order remains largely elusive. Kagome lattices, which intertwine nontrivial topology, charge order, and…
▽ More
Interactions among various electronic states such as CDW, magnetism, and superconductivity are of high significance in strongly correlated systems. While significant progress has been made in understanding the relationship between CDW and superconductivity, the interplay between CDW and magnetic order remains largely elusive. Kagome lattices, which intertwine nontrivial topology, charge order, and magnetism, offer an ideal platform for such studies. The kagome magnet FeGe, hosting the unique coupling between CDW and magnetism, has recently garnered considerable attention in that respect. Here we reveal the significant role of the orbital coupling effect during the CDW phase transition, highlighting the orbital origin of the magnetic moment enhancement in FeGe. Our X ray absorption experiments and first principles calculations illuminate the temperature dependent behavior of Fe3d_Ge4p orbital hybridization and corroborate its pivotal impact on the magnetic properties of FeGe. These findings introduce an orbital dimension to the correlation between charge and magnetic degrees of freedom, advancing our understanding of the intriguing quantum phases resulting from this interplay.
△ Less
Submitted 1 July, 2024;
originally announced July 2024.
-
Unraveling Anisotropic Hybridizations of Solid-state Electrolyte Nano-films in Li-ion Batteries
Authors:
Yuanjie Ning,
Wenjun Wu,
Liang Dai,
Shuo Sun,
Zhigang Zeng,
Dengsong Zhang,
Mark B. H. Breese,
Chuanbing Cai,
Chi Sin Tang,
Xinmao Yin
Abstract:
Li2WO4 (LWO) is recognized for its potential as a solid-state electrolyte and it has demonstrated the ability to enhance the electrochemical performance of LiCoO2 (LCO) cathodes in Li-ion batteries. However, prior investigations into LWO have predominantly involved polycrystalline structures, thereby lacking a comprehensive understanding of its behavior when interfaced with single crystal systems,…
▽ More
Li2WO4 (LWO) is recognized for its potential as a solid-state electrolyte and it has demonstrated the ability to enhance the electrochemical performance of LiCoO2 (LCO) cathodes in Li-ion batteries. However, prior investigations into LWO have predominantly involved polycrystalline structures, thereby lacking a comprehensive understanding of its behavior when interfaced with single crystal systems, particularly those intricately connected to LCO. In this study, we employ pulsed laser deposition (PLD) to epitaxially synthesize LWO nano-films on LCO layers with different orientations. Based on a series of high-resolution synchrotron-based techniques including X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS), the electronic structure of LWO is carefully scrutinized where a higher main energy level of W5d(eg)-O2p orbitals hybridization in LWO/LCO(104) as compared to LWO/LCO(003) has been observed. This experimental finding is further validated by a comprehensive set of density of states calculations. Furthermore, detailed polarized XAS characterization unveils distinct anisotropy between the two oriented LWO configurations. This comprehensive scientific investigation, harnessing the capabilities of synchrotron-based techniques, provides invaluable insights for future studies, offering guidance for the optimized utilization of LWO as a solid-state electrolyte or modification layer for LCO cathodes in high-powered Li-ion batteries.
△ Less
Submitted 12 May, 2024;
originally announced May 2024.
-
Tunable Collective Excitations in Epitaxial Perovskite Nickelates
Authors:
Mengxia Sun,
Xu He,
Mingyao Chen,
Chi Sin Tang,
Xiongfang Liu,
Liang Dai,
Jishan Liu,
Zhigang Zeng,
Shuo Sun,
Mark B. H. Breese,
Chuanbing Cai,
Yingge Du,
Le Wang,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
The formation of plasmons through the collective excitation of charge density has generated intense discussions, offering insights to fundamental sciences and potential applications. While the underlying physical principles have been well-established, the effects of many-body interactions and orbital hybridization on plasmonic dynamics remain understudied. In this work, we present the observation…
▽ More
The formation of plasmons through the collective excitation of charge density has generated intense discussions, offering insights to fundamental sciences and potential applications. While the underlying physical principles have been well-established, the effects of many-body interactions and orbital hybridization on plasmonic dynamics remain understudied. In this work, we present the observation of conventional metallic and correlated plasmons in epitaxial La1-xSrxNiO3 (LSNO) films with varying Sr doping concentrations (x = 0, 0.125, 0.25), unveiling their intriguing evolution. Unlike samples at other doping concentrations, the x = 0.125 intermediate doping sample does not exhibit the correlated plasmons despite showing high optical conductivity. Through a comprehensive experimental investigation using spectroscopic ellipsometry and X-ray absorption spectroscopy, the O2p-Ni3d orbital hybridization for LSNO with a doping concentration of x = 0.125 is found to be significantly enhanced, alongside a considerable weakening of its effective correlation U*. These factors account for the absence of correlated plasmons and the high optical conductivity observed in LSNO (0.125). Our results underscore the profound impact of orbital hybridization on the electronic structure and the formation of plasmon in strongly-correlated systems. This in turn suggest that LSNO could serve as a promising alternative material in optoelectronic devices.
△ Less
Submitted 1 June, 2024; v1 submitted 29 April, 2024;
originally announced April 2024.
-
Realization of a Two-Dimensional Lieb Lattice in a Metal-Inorganic Framework with Flat Bands and Topological Edge States
Authors:
Wenjun Wu,
Shuo Sun,
Chi Sin Tang,
Jing Wu,
Yu Ma,
Lingfeng Zhang,
Chuanbing Cai,
Jianxin Zhong,
Milorad V. Milošević,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
Flat bands and Dirac cones in materials are at the source of the exotic electronic and topological properties. The Lieb lattice is expected to host these electronic structures, arising from quantum destructive interference. Nevertheless, the experimental realization of a two-dimensional Lieb lattice remained challenging to date due to its intrinsic structural instability. After computationally des…
▽ More
Flat bands and Dirac cones in materials are at the source of the exotic electronic and topological properties. The Lieb lattice is expected to host these electronic structures, arising from quantum destructive interference. Nevertheless, the experimental realization of a two-dimensional Lieb lattice remained challenging to date due to its intrinsic structural instability. After computationally designing a Platinum-Phosphorus (Pt-P) Lieb lattice, we have successfully overcome its structural instability and synthesized it on a gold substrate via molecular beam epitaxy. Low-temperature scanning tunneling microscopy and spectroscopy verified the Lieb lattice's morphology and electronic flat bands. Furthermore, topological Dirac edge states stemming from pronounced spin-orbit coupling induced by heavy Pt atoms have been predicted. These findings convincingly open perspectives for creating metal-inorganic framework-based atomic lattices, offering prospects for strongly correlated phases interplayed with topology.
△ Less
Submitted 29 April, 2024;
originally announced April 2024.
-
Uncovering an Interfacial Band Resulting from Orbital Hybridization in Nickelate Heterostructures
Authors:
Mingyao Chen,
Huimin Liu,
Xu He,
Minjuan Li,
Chi Sin Tang,
Mengxia Sun,
Krishna Prasad Koirala,
Mark E. Bowden,
Yangyang Li,
Xiongfang Liu,
Difan Zhou,
Shuo Sun,
Mark B. H. Breese,
Chuanbing Cai,
Yingge Du,
Andrew T. S. Wee,
Le Wang,
Xinmao Yin
Abstract:
The interaction of atomic orbitals at the interface of perovskite oxide heterostructures has been investigated for its profound impact on the band structures and electronic properties, giving rise to unique electronic states and a variety of tunable functionalities. In this study, we conducted an extensive investigation of the optical and electronic properties of epitaxial NdNiO3 thin films grown…
▽ More
The interaction of atomic orbitals at the interface of perovskite oxide heterostructures has been investigated for its profound impact on the band structures and electronic properties, giving rise to unique electronic states and a variety of tunable functionalities. In this study, we conducted an extensive investigation of the optical and electronic properties of epitaxial NdNiO3 thin films grown on a series of single crystal substrates. Unlike films synthesized on other substrates, NdNiO3 on SrTiO3 (NNO/STO) gives rise to a unique band structure which features an additional unoccupied band situated above the Fermi level. Our comprehensive investigation, which incorporated a wide array of experimental techniques and density functional theory calculations, revealed that the emergence of the interfacial band structure is primarily driven by the orbital hybridization between Ti 3d orbitals of the STO substrate and O 2p orbitals of the NNO thin film. Furthermore, exciton peaks have been detected in the optical spectra of the NNO/STO film, attributable to the pronounced electron-electron (e-e) and electron-hole (e-h) interactions propagating from the STO substrate into the NNO film. These findings underscore the substantial influence of interfacial orbital hybridization on the electronic structure of oxide thin-films, thereby offering key insights into tuning their interfacial properties.
△ Less
Submitted 29 April, 2024;
originally announced April 2024.
-
Exciton-activated effective phonon magnetic moment in monolayer MoS2
Authors:
Chunli Tang,
Gaihua Ye,
Cynthia Nnokwe,
Mengqi Fang,
Li Xiang,
Masoud Mahjouri-Samani,
Dmitry Smirnov,
Eui-Hyeok Yang,
Tingting Wang,
Lifa Zhang,
Rui He,
Wencan Jin
Abstract:
Optical excitation of chiral phonons plays a vital role in studying the phonon-driven magnetic phenomena in solids. Transition metal dichalcogenides host chiral phonons at high symmetry points of the Brillouin zone, providing an ideal platform to explore the interplay between chiral phonons and valley degree of freedom. Here, we investigate the helicity-resolved magneto-Raman response of monolayer…
▽ More
Optical excitation of chiral phonons plays a vital role in studying the phonon-driven magnetic phenomena in solids. Transition metal dichalcogenides host chiral phonons at high symmetry points of the Brillouin zone, providing an ideal platform to explore the interplay between chiral phonons and valley degree of freedom. Here, we investigate the helicity-resolved magneto-Raman response of monolayer MoS2 and identify a doubly degenerate Brillouin-zone-center chiral phonon mode at ~270 cm-1. Our wavelength- and temperature-dependent measurements show that this chiral phonon is activated through the resonant excitation of A exciton. Under an out-of-plane magnetic field, the chiral phonon exhibits giant Zeeman splitting, which corresponds to an effective magnetic moment of ~2.5mu_B. Moreover, we carry out theoretical calculations based on the morphic effects in nonmagnetic crystals, which reproduce the linear Zeeman splitting and Raman cross-section of the chiral phonon. Our study provides important insights into lifting the chiral phonon degeneracy in an achiral covalent material, paving a new route to excite and control chiral phonons.
△ Less
Submitted 7 April, 2024; v1 submitted 22 March, 2024;
originally announced March 2024.
-
Combining intrinsic and sliding-induced polarizations for multistates in two dimensional ferroelectrics
Authors:
Chuhan Tang,
Zhiqiang Tian,
Tao Ouyang,
Anlian Pan,
Mingxing Chen
Abstract:
Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information storage. Here, we propose to build multistates by combining the intrinsic and sliding-induced polarizations. The physics is that there is at least one order of magnitude difference in the energy barriers between these two…
▽ More
Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information storage. Here, we propose to build multistates by combining the intrinsic and sliding-induced polarizations. The physics is that there is at least one order of magnitude difference in the energy barriers between these two types of polarization, which leads to a significant difference in the electric fields for reversing the polarization. This difference, along with the symmetry breaking, allows for a unique flipping mechanism involving layer-by-layer sliding followed by layer-by-layer flipping during the transformation of the multistates. As a result, six and ten switchable states can be achieved for the 1T" bilayers and trilayers, respectively. We further illustrate the concept in H-stacking bilayers and trilayers of 1T" transition-metal dichalcogenides by first-principles calculations. Our study provides a new route to design novel polarization states for developing next-generation memory devices.
△ Less
Submitted 27 February, 2025; v1 submitted 18 March, 2024;
originally announced March 2024.
-
Magneto-optical properties of a quantum dot array interacting with a far-infrared photon mode of a cylindrical cavity
Authors:
Vidar Gudmundsson,
Vram Mughnetsyan,
Hsi-Sheng Goan,
Jeng-Da Chai,
Nzar Rauf Abdullah,
Chi-Shung Tang,
Valeriu Moldoveanu,
Andrei Manolescu
Abstract:
We model the equilibrium properties of a two-dimensional electron gas in a square lateral superlattice of quantum dots in a GaAs heterostructure subject to an external homogeneous perpendicular magnetic field and a far-infrared circular cylindrical photon cavity with one quantized mode, the TE011 mode. In a truncated linear basis constructed by a tensor product of the single-electron states of the…
▽ More
We model the equilibrium properties of a two-dimensional electron gas in a square lateral superlattice of quantum dots in a GaAs heterostructure subject to an external homogeneous perpendicular magnetic field and a far-infrared circular cylindrical photon cavity with one quantized mode, the TE011 mode. In a truncated linear basis constructed by a tensor product of the single-electron states of the noninteracting system and the eigenstates of the photon number operator, a local spin density approximation of density functional theory is used to compute the electron-photon states of the two-dimensional electron gas in the cavity. The common spatial symmetry of the vector fields for the external magnetic field and the cavity photon field in the long wavelength approximation enhances higher order magnetic single- and multi-photon processes for both the para- and the diamagnetic electron-photon interactions. The electron-photon coupling introduces explicit photon replicas into the bandstructure and all subbands gain a photon content, constant for each subband, that can deviate from an integer value as the coupling is increased or the photon energy is varied. The subbands show a complex Rabi anticrossing behavior when the photon energy and the coupling bring subbands into resonances. The complicated energy subband structure leads to photon density variations in reciprocal space when resonances occur in the spectrum. The electron-photon coupling polarizes the charge density and tends to reduce the Coulomb exchange effects as the coupling strength increases.
△ Less
Submitted 15 March, 2024;
originally announced March 2024.
-
Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts
Authors:
V. Ryzhii,
C. Tang,
T. Otsuji,
M. Ryzhii,
V. Mitin,
M. S. Shur
Abstract:
We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ul…
▽ More
We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ultimate modulation frequency of the GC-FET bolometers are determined by the efficiency of the hot-electron energy transfer to the lattice and the GC side contacts due to the 2DEG lateral thermal conductance. The dependences of these mechanisms on the band structure and geometrical parameters open the way for the GC-FET bolometers optimization, in particular, for the enhancement of the maximum modulation frequency.
△ Less
Submitted 10 March, 2024;
originally announced March 2024.
-
Can we predict mixed grain boundaries from their tilt and twist components?
Authors:
Wei Wan,
Changxin Tang,
Eric R. Homer
Abstract:
One of the major challenges towards understanding and further utilizing the properties and functional behaviors of grain boundaries (GB) is the complexity of general GBs with mixed tilt and twist characters. Here, we report the correlations between mixed GBs and their tilt and twist components in terms of structure, energy and stress field by computationally examining 7040 silicon GBs. Such correl…
▽ More
One of the major challenges towards understanding and further utilizing the properties and functional behaviors of grain boundaries (GB) is the complexity of general GBs with mixed tilt and twist characters. Here, we report the correlations between mixed GBs and their tilt and twist components in terms of structure, energy and stress field by computationally examining 7040 silicon GBs. Such correlations indicate that low angle mixed GBs are formed through the reconstruction mechanisms between their superposed tilt and twist components, which are revealed as the energetically favorable dissociation, motion and reaction of dislocations and stacking faults. In addition, various complex disconnection network structures are discovered near the conventional twin and structural unit GBs, implying the role of disconnection superposition in forming high angle mixed GBs. By unveiling the energetic correlation, an extended Read-Shockley model that predicts the general trends of GB energy is proposed and confirmed in various GB structures across different lattices. Finally, this work is validated in comparison with experimental observations and first-principles calculations.
△ Less
Submitted 4 June, 2024; v1 submitted 4 March, 2024;
originally announced March 2024.
-
On the origin of topotactic reduction effect for superconductivity in infinite-layer nickelates
Authors:
Shengwei Zeng,
Chi Sin Tang,
Zhaoyang Luo,
Lin Er Chow,
Zhi Shiuh Lim,
Saurav Prakash,
Ping Yang,
Caozheng Diao,
Xiaojiang Yu,
Zhenxiang Xing,
Rong Ji,
Xinmao Yin,
Changjian Li,
X. Renshaw Wang,
Qian He,
Mark B. H. Breese,
A. Ariando,
Huajun Liu
Abstract:
Topotactic reduction utilizing metal hydrides as reagents emerges as an effective approach to achieve exceptionally low oxidization states of metal ions and unconventional coordination networks. This method opens avenues to the development of entirely new functional materials, with one notable example being the infinite-layer nickelate superconductors. However, the reduction effect on the atomic r…
▽ More
Topotactic reduction utilizing metal hydrides as reagents emerges as an effective approach to achieve exceptionally low oxidization states of metal ions and unconventional coordination networks. This method opens avenues to the development of entirely new functional materials, with one notable example being the infinite-layer nickelate superconductors. However, the reduction effect on the atomic reconstruction and electronic structures -- crucial for superconductivity -- remains largely unresolved. We design two sets of control Nd$_{0.8}$Sr$_{0.2}$NiO$_2$ thin films and implement secondary ion mass spectroscopy to highlight the absence of reduction-induced hydrogen intercalation. X-ray absorption spectroscopy shows a significant linear dichroism with dominant Ni 3d$_{x2{-}y2}$ orbitals on superconducting samples, indicating a Ni single-band nature of infinite-layer nickelates. Consistent with the superconducting $T_c$, the Ni 3d orbitals asymmetry manifests a dome-like reduction duration dependence. Our results unveil the critical role of reduction in modulating the Ni-3d orbital polarization and its impact on the superconducting properties.
△ Less
Submitted 1 March, 2024;
originally announced March 2024.
-
Terahertz plasmonic resonances in coplanar graphene nanoribbon structures
Authors:
V. Ryzhii,
C. Tang,
T. Otsuji,
M. Ryzhii,
M. S. Shur
Abstract:
We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the CNR structures are associated with the electron and hole inductances and the lateral inter-CNR capacitance. A relatively low inter-GNR capacitance enables the resonant excitation of the THz plasmonic…
▽ More
We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the CNR structures are associated with the electron and hole inductances and the lateral inter-CNR capacitance. A relatively low inter-GNR capacitance enables the resonant excitation of the THz plasmonic oscillations in the CNR structures with long GNRs. The GNR structures under consideration can be used in different THz devices as the resonant structures incorporated in THz detectors, THz sources using resonant-tunneling diodes, photomixers, and surface acoustic wave sensors.
△ Less
Submitted 9 March, 2024; v1 submitted 6 February, 2024;
originally announced February 2024.
-
Small polarons mediated near-room-temperature metal-insulator transition in vanadium dioxide and their hopping dynamics
Authors:
Xiongfang Liu,
Tong Yang,
Shanquan Chen,
Jing Wu,
Chi Sin Tang,
Yuanjie Ning,
Zuhuang Chen,
Liang Dai,
Mengxia Sun,
Mingyao Chen,
Kun Han,
Difan Zhou,
Shengwei Zeng,
Shuo Sun,
Sensen Li,
Ming Yang,
Mark B. H. Breese,
Chuanbing Cai,
Thirumalai Venkatesan,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellips…
▽ More
Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We illustrate the complementary role of polaron dynamics in facilitating Peierls and Mott transitions, thereby contributing to the MIT processes. Furthermore, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film offer valuable insights into their electron structures. This investigation enhances comprehension of the MIT mechanism in correlated systems and underscores the roles of polarons, lattice distortions, and electron correlations in facilitating phase transition processes in strongly-correlated systems. Additionally, the detailed detection of small polarons and plasmons serves as inspiration for the development of new device functionalities.
△ Less
Submitted 22 January, 2025; v1 submitted 28 December, 2023;
originally announced December 2023.
-
Zr-Co-Al bulk metallic glass composites containing B2 ZrCo via rapid quenching and annealing
Authors:
Yu Chen,
Chunguang Tang,
Kevin Laws,
Qiang Zhu,
Michael Ferry
Abstract:
As a promising remedy for overcoming the limited ductility and work softening of bulk metallic glasses (BMGs), BMG composites incorporating a B2 crystalline phase have attracted considerable attention. Here, we explore the formation of Zr-Co-Al BMG composites by quenching alloys Zr$_{55}$Co$_{31}$Al$_{14}$, Zr$_{54.5}$Co$_{33.5}$Al$_{12}$, Zr$_{53.5}$Co$_{36.5}$Al$_{10}$, Zr$_{52.5}$Co$_{37.5}$Al…
▽ More
As a promising remedy for overcoming the limited ductility and work softening of bulk metallic glasses (BMGs), BMG composites incorporating a B2 crystalline phase have attracted considerable attention. Here, we explore the formation of Zr-Co-Al BMG composites by quenching alloys Zr$_{55}$Co$_{31}$Al$_{14}$, Zr$_{54.5}$Co$_{33.5}$Al$_{12}$, Zr$_{53.5}$Co$_{36.5}$Al$_{10}$, Zr$_{52.5}$Co$_{37.5}$Al$_{10}$, and Zr$_{43}$Co$_{43}$Al$_{14}$. We found the first alloy fully amorphous whereas the fifth was fully crystallized upon quenching. The other three were quenched to generate composite structures, with a higher fraction of B2 ZrCo phase with increasing Co/Zr ratio and decreasing Al content. For comparison, the formation of B2 ZrCo in annealed Zr$_{55}$Co$_{31}$Al$_{14}$ was also studied. For both approaches the influence of crystalline phases on hardness was examined.
△ Less
Submitted 24 October, 2023;
originally announced October 2023.
-
Natural liquid organic hydrogen carrier with low dehydrogenation energy: A first principles study
Authors:
Chunguang Tang,
Shunxin Fei,
G. David Lin,
Yun Liu
Abstract:
Liquid organic hydrogen carriers (LOHCs) represent a promising approach for hydrogen storage due to their favorable properties including stability and compatibility with the existing infrastructure. However, fossil-based LOHC molecules are not green or sustainable. Here we examined the possibility of using norbelladine and trisphaeridine, two typical structures of Amaryllidaceae alkaloids, as the…
▽ More
Liquid organic hydrogen carriers (LOHCs) represent a promising approach for hydrogen storage due to their favorable properties including stability and compatibility with the existing infrastructure. However, fossil-based LOHC molecules are not green or sustainable. Here we examined the possibility of using norbelladine and trisphaeridine, two typical structures of Amaryllidaceae alkaloids, as the LOHCs from the sustainable and renewable sources of natural products. Our first principles thermodynamics calculations reveal low reversibility for the reaction of norbelladine to/from perhydro-norbelladine because of the existence of stabler isomers of perhydro-norbelladine. On the other hand, trisphaeridine is found promising due to its high hydrogen storage capacity ($\sim$5.9 wt\%) and favorable energetics. Dehydrogenation of perhydro-trisphaeridine has an average standard enthalpy change of $\sim$54 KJ/mol-H$_2$, similar to that of perhydro-\textit{N}-ethylcarbazole, a typical LOHC known for its low dehydrogenation enthalpy. This work is a first exploration of Amaryllidaceae alkaloids for hydrogen storage and the results demonstrate, more generally, the potential of bio-based molecules as a new sustainable resource for future large-scale hydrogen storage.
△ Less
Submitted 24 October, 2023;
originally announced October 2023.
-
Is hydrogen diffusion in amorphous metals non-Arrhenian?
Authors:
Chunguang Tang,
Gang Sun,
Yun Liu
Abstract:
Hydrogen diffusion is critical to the performance of metals for hydrogen storage as well as other important applications. As compared to its crystalline counterpart which follows the Arrhenius relation, hydrogen diffusion in amorphous metals sometimes are experimentally found to be non-Arrhenian. In this work we studied the diffusion of hydrogen in amorphous Pd-H and Zr-Cu-H alloys based on molecu…
▽ More
Hydrogen diffusion is critical to the performance of metals for hydrogen storage as well as other important applications. As compared to its crystalline counterpart which follows the Arrhenius relation, hydrogen diffusion in amorphous metals sometimes are experimentally found to be non-Arrhenian. In this work we studied the diffusion of hydrogen in amorphous Pd-H and Zr-Cu-H alloys based on molecular dynamics simulations. Our simulations confirm Arrhenian diffusion behaviour for hydrogen in amorphous alloys, in contrast to previous theoretical studies which predict non-Arrhenian behaviour. We show that the simulated non-Arrhenian diffusion based on molecular dynamics could result from a systematic error related to too short simulation time. We also discussed the experimental non-Arrhenian behaviour of hydrogen diffusion within the framework of quantum tunneling and amorphous-amorphous phase transformations.
△ Less
Submitted 23 October, 2023;
originally announced October 2023.
-
Critical dehydrogenation steps of perhydro-N-ethylcarbazole on Ru(0001) surface
Authors:
Chunguang Tang,
Preetham Permude,
Shunxin Fei,
Terry J. Frankcombe,
Sean C. Smith,
Yun Liu
Abstract:
Understanding of the critical atomistic steps during the dehydrogenation process of liquid organic hydrogen carriers (LOHCs) is important to the design of cost-efficient, high-performance LOHC catalysts. Based on the density functional theory (DFT) we studied the thermodynamics and kinetics of the complete dehydrogenation path of perhydro-N-ethylcarbazole (12H-NEC) on Ru(0001) surface, involving t…
▽ More
Understanding of the critical atomistic steps during the dehydrogenation process of liquid organic hydrogen carriers (LOHCs) is important to the design of cost-efficient, high-performance LOHC catalysts. Based on the density functional theory (DFT) we studied the thermodynamics and kinetics of the complete dehydrogenation path of perhydro-N-ethylcarbazole (12H-NEC) on Ru(0001) surface, involving the adsorption of 12H-NEC, the discharge of H ions onto Ru surface, and the desorption of H2 and hydrogen-lean NEC. It was found that the bonding of nH-NEC is significantly strengthened for n $\le$ 4 because of the flat aromatic ring. Although the whole dehydrogenation process is endothermic, the release of H from nH-NEC, with H adsorbed onto the Ru surface, was found to be exothermic. The desorption of flat, hydrogen-lean NEC, which costs ~255 kJ/mol, was identified as the most energy demanding step. In addition, the effect of surface morphology on adsorption was studied based on an amorphous surface model. Overall, the results imply more efficient dehydrogenation could be achieved from relatively weak bonding of NEC to catalysts, either through engineering catalyst surface (such as surface defects or smaller catalyst particles) or different catalyst materials. Our calculations also revealed possible dealkylation at elevated temperatures.
△ Less
Submitted 23 October, 2023;
originally announced October 2023.
-
Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer
Authors:
V. Ryzhii,
M. S. Shur,
M. Ryzhii,
V. Mitin,
C. Tang,
T. Otsuji
Abstract:
We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector…
▽ More
We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector response on the incoming THz signal phase shift and the THz radiation angle of incidence.
△ Less
Submitted 15 October, 2023;
originally announced October 2023.
-
An Isotropic Discretization with Semi-implicit Approach for Phase Field Model of Alloy Solidification
Authors:
Chao Tang,
David Taiyen Wu,
Siu Sin Quek
Abstract:
Quantitative phase field models have been extensively used to study the solidification behavior of alloys under different conditions. However, a longstanding challenge of phase field models is the directional bias caused by the discretization-induced lattice effects. In particular, widely used discretization methods may introduce significant spurious anisotropy for simulations of polycrystalline s…
▽ More
Quantitative phase field models have been extensively used to study the solidification behavior of alloys under different conditions. However, a longstanding challenge of phase field models is the directional bias caused by the discretization-induced lattice effects. In particular, widely used discretization methods may introduce significant spurious anisotropy for simulations of polycrystalline solidification. In this paper, we demonstrate a feasible 2D discretization strategy utilizing a hexagonal mesh to reduce the lattice-induced anisotropy of the phase field model. The leading differential terms of the 2D discretization methods are analyzed by using known methods in Fourier space. Using Taylor expansion of discrete Fourier Transform up to sixth order, we found that the proposed discretization strategy is more accurate and isotropic than other methods, including the isotropic discretization recently proposed by Ji et al.[1]. Additionally, the proposed 2D discretization method can be easily incorporated into a semi-implicit algorithm to solve phase field equations, thereby greatly reducing time step constraints and improving computational efficiency compared to explicit approaches. To prove the accuracy and efficiency of the proposed isotropic discretization with semi-implicit algorithm, 2D simulations of alloy solidification with different discretization schemes were performed and compared. We show that the proposed discretization using a hexagonal mesh can drastically reduce grid-induced anisotropy compared to conventional methods.
△ Less
Submitted 2 September, 2023;
originally announced September 2023.
-
Vertical Ferroelectricity in Van der Waals Materials: Models and Devices
Authors:
Yuwen Zhang,
Chunfeng Cui,
Chaoyu He,
Tao Ouyang,
Jin Li,
Mingxing Chen,
Chao Tang
Abstract:
Ferroelectricity has a wide range of applications in functional electronics and is extremely important for the development of next-generation information storage technology, but it is difficult to achieve due to its special symmetry requirements. In this letter, based on van derWaals stacking, a generic model is proposed for realizing ferroelectric devices, where a freely movable center layer is p…
▽ More
Ferroelectricity has a wide range of applications in functional electronics and is extremely important for the development of next-generation information storage technology, but it is difficult to achieve due to its special symmetry requirements. In this letter, based on van derWaals stacking, a generic model is proposed for realizing ferroelectric devices, where a freely movable center layer is packaged in two fixed and symmetrically stacked layers. In this model, the ferroelectric phase transition can be realized between the two equivalent and eccentric ground stacking-states with opposite polarizations. By means of first-principles calculations, taking the h-BN/h-BN/h-BN and h-BN/Graphene/h-BN as feasible models, we carefully evaluate the magnitude of ferroelectricity. The corresponding polarizations are estimated as 1.83 and 1.35 pC/m, respectively, which are comparable to the sliding ferroelectricity. Such a new tri-layer model of vertical ferroelectricity can be constructed by arbitrary van derWaals semiconducting materials, and usually holds low switching barrier. Optimized material combinations with remarkable polarization are highly expectable to be discovered from the huge candidate set for future information storage.
△ Less
Submitted 20 July, 2023;
originally announced July 2023.
-
Optical conductivity enhancement and thermal reduction of BN-codoped MgO nanosheet: Significant effects of B-N atomic interaction
Authors:
Nzar Rauf Abdullah,
Botan Jawdat Abdullah,
Yousif Hussein Azeez,
Chi-Shung Tang,
Vidar Gudmundsson
Abstract:
We investigate the electronic, the thermal, and the optical properties of BN-codoped MgO monolayers taking into account the interaction effects between the B and the N dopant atoms. The relatively wide indirect band gap of a pure MgO nanosheet can be changed to a narrow direct band gap by tuning the B-N attractive interaction. The band gap reduction does not only enhance the optical properties, in…
▽ More
We investigate the electronic, the thermal, and the optical properties of BN-codoped MgO monolayers taking into account the interaction effects between the B and the N dopant atoms. The relatively wide indirect band gap of a pure MgO nanosheet can be changed to a narrow direct band gap by tuning the B-N attractive interaction. The band gap reduction does not only enhance the optical properties, including the absorption spectra and the optical conductivity, but also the most intense peak is shifted from the Deep-UV to the visible light region. The red shifting of the absorption spectra and the optical conductivity are caused by the attractive interaction. In addition, both isotropic and anisotropic characteristics are seen in the optical properties depending on the strength of the B-N attractive interaction. The heat capacity is reduced for the BN-doped MgO monolayer, which can be referred to changes in the bond dissociation energy. The bond dissociation energy decreases as the difference in the electronegativities of the bonded atoms decreases. The lower difference in the electronegativities leads to a weaker endothermic process resulting in reduction of the heat capacity. An ab initio molecular dynamics, AIMD, calculation is utilized to check the thermodynamic stability of the pure and the BN-codoped MgO monolayers. We thus confirm that the BN-codopant atoms can be used to gain control of the properties of MgO monolayers for thermo- and opto-electronic devices.
△ Less
Submitted 15 July, 2023;
originally announced July 2023.
-
Planar buckling controlled optical conductivity of SiC monolayer from Deep-UV to visible light region: A first-principles study
Authors:
Nzar Rauf Abdullah,
Hunar Omar Rashid,
Botan Jawdat Abdullah,
Chi-Shung Tang,
Vidar Gudmundsson
Abstract:
The electrical and optical properties of flat and planar buckled siligraphene (SiC) monolayer are examined using a first principles approach. Buckling between the Si and the C atoms in SiC structures influences and impacts the properties of the 2D nanomaterial, according to our results. The electron density of a planar SiC monolayer is calculated, as well as the effects of buckling on it. Accordin…
▽ More
The electrical and optical properties of flat and planar buckled siligraphene (SiC) monolayer are examined using a first principles approach. Buckling between the Si and the C atoms in SiC structures influences and impacts the properties of the 2D nanomaterial, according to our results. The electron density of a planar SiC monolayer is calculated, as well as the effects of buckling on it. According to our findings, a siligraphene monolayer is a semiconductor nanomaterial with a direct electronic band gap that decreases as the planar buckling rises. The contributions to the density of states differ owing to changes in the system's structure. Another explanation is that planar buckling reduces the sp$^2$ overlapping, breaking the bond symmetry causing it to become a sp$^3$ bond. We show that increased planar buckling between the Si and the C atoms alters the monolayer's optical, mechanical, and thermal properties. A managed planar buckling increases the optical conductivity with a significant shift in the far visible range, as all optical spectra features are red shifted, still remaining visible. Instead of a $σ\text{-}σ$ covalent bond, the sp$^3$ hybridization produces a stronger $σ\text{-}π$ bond. Optical characteristics such as the dielectric function, the absorbance, and the optical conductivity of a SiC monolayer are investigated for both parallel and perpendicular polarization of the incoming electric field for both flat and planar buckled systems. The findings show that the optical properties are influenced for both of these two polarizations, with a significant change in the optical spectrum from the near visible to the far visible. The ability to manipulate the optical and electrical characteristics of this critical 2D material through planar buckling opens up new technological possibilities, especially for optoelectronic devices.
△ Less
Submitted 15 July, 2023;
originally announced July 2023.
-
Micromechanical field-effect transistor terahertz detectors with optical interferometric readout
Authors:
V. Ryzhii,
C. Tang,
T. Otsuji,
M. Ryzhii,
S. G. Kalenkov,
V. Mitin,
M. S. Shur
Abstract:
We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optic…
▽ More
We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optical output. The combination of the mechanical and plasmonic resonances in the MMFET with the optical amplification enables an effective THz detection.
△ Less
Submitted 23 June, 2023;
originally announced June 2023.
-
Magnetic properties of a cavity-embedded square lattice of quantum dots or antidots
Authors:
Vram Mughnetsyan,
Vidar Gudmundsson,
Nzar Rauf Abdullah,
Chi-Shung Tang,
Valeriu Moldoveanu,
Andrei Manolescu
Abstract:
We apply quantum electrodynamical density functional theory to obtain the electronic density, the spin polarization, as well as the orbital and the spin magnetization of square periodic arrays of quantum dots or antidots subjected to the influence of a far-infrared cavity photon field. A gradient-based exchange-correlation functional adapted to a two-dimensional electron gas in a transverse homoge…
▽ More
We apply quantum electrodynamical density functional theory to obtain the electronic density, the spin polarization, as well as the orbital and the spin magnetization of square periodic arrays of quantum dots or antidots subjected to the influence of a far-infrared cavity photon field. A gradient-based exchange-correlation functional adapted to a two-dimensional electron gas in a transverse homogeneous magnetic field is used in the theoretical framework and calculations. The obtained results predict a non-trivial effect of the cavity field on the electron distribution in the unit cell of the superlattice, as well as on the orbital and the spin magnetization. The number of electrons per unit cell of the superlattice is shown to play a crucial role in the modification of the magnetization via the electron-photon coupling. The calculations show that cavity photons strengthen the diamagnetic effect in the quantum dots structure, while they weaken the paramagnetic effect in an antidot structure. As the number of electrons per unit cell of the lattice increases the electron-photon interaction reduces the exchange forces that would otherwise promote strong spin splitting for both the dot and the antidot array.
△ Less
Submitted 11 June, 2023;
originally announced June 2023.
-
Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances
Authors:
M. Ryzhii,
V. Ryzhii,
M. S. Shur,
V. Mitin,
C. Tang,
T. Otsuji
Abstract:
We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-Boron Nitride black-Phosphorus/ hexagonal-Boron Nitride (h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN, whereas a short sect…
▽ More
We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-Boron Nitride black-Phosphorus/ hexagonal-Boron Nitride (h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN, whereas a short section of the GC is sandwiched between the b-P gate BL and the h-BN bottom layer. The b-P gate BL serves as the window for the electron thermionic current from the GC. The electron mobility in the GC section encapsulated in h-BN can be fairly large. This might enable a strong resonant plasmonic response of the GC-FET detectors despite relatively lower electron mobility in the GC section covered by the b-P window BL. The narrow b-P window diminishes the Peltier cooling and enhances the detector performance. The proposed device structure and its operation principle promote elevated values of the room-temperature GC-FET THz detector responsivity and other characteristics, especially at the plasmonic resonances.
△ Less
Submitted 2 June, 2023;
originally announced June 2023.
-
Controlling the excitation spectrum of a quantum dot array with a photon cavity
Authors:
Vidar Gudmundsson,
Vram Mughnetsyan,
Nzar Rauf Abdullah,
Chi-Shung Tang,
Valeriu Moldoveanu,
Andrei Manolescu
Abstract:
We use a recently proposed quantum electrodynamical density functional theory (QEDFT) functional in a real-time excitation calculation for a two-dimensional electron gas in a square array of quantum dots in an external constant perpendicular magnetic field to model the influence of cavity photons on the excitation spectra of the system. The excitation is generated by a short elecrical pulse. The q…
▽ More
We use a recently proposed quantum electrodynamical density functional theory (QEDFT) functional in a real-time excitation calculation for a two-dimensional electron gas in a square array of quantum dots in an external constant perpendicular magnetic field to model the influence of cavity photons on the excitation spectra of the system. The excitation is generated by a short elecrical pulse. The quantum dot array is defined in an AlGaAs-GaAs heterostructure, which is in turn embedded in a parallel plate far-infrared photon-microcavity. The required exchange and correlation energy functionals describing the electron-electron and electron-photon interactions have therefore been adapted for a two-dimensional electron gas in a homogeneous external magnetic field. We predict that the energies of the excitation modes activated by the pulse are generally red-shifted to lower values in the presence of a cavity. The red-shift can be understood in terms of the polarization of the electron charge by the cavity photons and depends on the magnetic flux, the number of electrons in a unit cell of the lattice, and the electron-photon interaction strength. We find an interesting interplay of the exchange forces in a spin polarized two-dimensional electron gas and the square lattice structure leading to a small but clear blue-shift of the excitation mode spectra when one electron resides in each dot.
△ Less
Submitted 19 May, 2023;
originally announced May 2023.
-
Self-passivated freestanding superconducting oxide film for flexible electronics
Authors:
Zhuoyue Jia,
Chi Sin Tang,
Jing Wu,
Changjian Li,
Wanting Xu,
Kairong Wu,
Difan Zhou,
Ping Yang,
Shengwei Zeng,
Zhigang Zeng,
Dengsong Zhang,
Ariando Ariando,
Mark B. H. Breese,
Chuanbing Cai,
Xinmao Yin
Abstract:
The integration of high-temperature superconducting YBa2Cu3O6+x (YBCO) into flexible electronic devices has the potential to revolutionize the technology industry. The effective preparation of high-quality flexible YBCO films therefore plays a key role in this development. We present a novel approach for transferring water-sensitive YBCO films onto flexible substrates without any buffer layer. Fre…
▽ More
The integration of high-temperature superconducting YBa2Cu3O6+x (YBCO) into flexible electronic devices has the potential to revolutionize the technology industry. The effective preparation of high-quality flexible YBCO films therefore plays a key role in this development. We present a novel approach for transferring water-sensitive YBCO films onto flexible substrates without any buffer layer. Freestanding YBCO film on a polydimethylsiloxane substrate is extracted by etching the Sr3Al2O6 sacrificial layer from the LaAlO3 substrate. In addition to the obtained freestanding YBCO thin film having a Tc of 89.1 K, the freestanding YBCO thin films under inward and outward bending conditions have Tc of 89.6 K and 88.9 K, respectively. A comprehensive characterization involving multiple experimental techniques including high-resolution transmission electron microscopy, scanning electron microscopy, Raman and X-ray Absorption Spectroscopy is conducted to investigate the morphology, structural and electronic properties of the YBCO film before and after the extraction process where it shows the preservation of the structural and superconductive properties of the freestanding YBCO virtually in its pristine state. Further investigation reveals the formation of a YBCO passivated layer serves as a protective layer which effectively preserves the inner section of the freestanding YBCO during the etching process. This work plays a key role in actualizing the fabrication of flexible oxide thin films and opens up new possibilities for a diverse range of device applications involving thin-films and low-dimensional materials.
△ Less
Submitted 6 July, 2023; v1 submitted 8 May, 2023;
originally announced May 2023.
-
Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$_x$P$_{1-x}$ gate layer
Authors:
V. Ryzhii,
C. Tang,
T. Otsuji,
M. Ryzhii,
V. Mitin,
M. S. Shur
Abstract:
We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to a…
▽ More
We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to an increase in the rectified current between the channel and the gate over the b-As$_x$P$_{1-x}$ energy barrier layer (BLs). The specific feature of the GC-FETs under consideration is relatively low energy BLs and the possibility to optimize the device characteristics by choosing the barriers containing a necessary number of the b-As$_x$P$_{1-x}$ atomic layers and a proper gate voltage. The excitation of the plasma oscillations in the GC-FETs leads to the resonant reinforcement of the carrier heating and the enhancement of the detector responsivity. The room temperature responsivity can exceed the values of $10^3$~A/W. The speed of the GC-FET detector's response to the modulated THz radiation is determined by the processes of carrier heating. As shown, the modulation frequency can be in the range of several GHz at room temperatures.
△ Less
Submitted 23 April, 2023;
originally announced April 2023.
-
Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers
Authors:
V. Ryzhii,
C. Tang,
T. Otsuji,
M. Ryzhii,
V. Mitin,
M. S. Shur
Abstract:
We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to…
▽ More
We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to the excitation of plasmonic oscillations in the GC by the THz signals, the GC-FET detector response can be pronouncedly resonant, leading to elevated values of the detector responsivity. The lateral thermal conductivity of the 2DEG can markedly affect the GC-FET responsivity, in particular, its spectral characteristics. This effect should be considered for the optimization of the GC-FET detectors.
△ Less
Submitted 15 March, 2023;
originally announced March 2023.
-
Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate
Authors:
V. Ryzhii,
C. Tang,
T. Otsuji,
M. Ryzhii,
V. Mitin,
M. S. Shur
Abstract:
We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by impinging THz radiation leading to thermionic emissi…
▽ More
We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by impinging THz radiation leading to thermionic emission of the hot electrons from the GC to the MG. This results in the variation of the floating gate potential, which affects the source-drain current. At the THz radiation frequencies close to the plasmonic resonance frequencies in the gated GC, the variation of the source-drain current and, hence, the detector responsivity can be resonantly large.
△ Less
Submitted 24 April, 2023; v1 submitted 15 March, 2023;
originally announced March 2023.
-
Spin Dynamics in van der Waals Magnetic Systems
Authors:
Chunli Tang,
Laith Alahmed,
Muntasir Mahdi,
Yuzan Xiong,
Jerad Inman,
Nathan J. McLaughlin,
Christoph Zollitsch,
Tae Hee Kim,
Chunhui Rita Du,
Hidekazu Kurebayashi,
Elton J. G. Santos,
Wei Zhang,
Peng Li,
Wencan Jin
Abstract:
The discovery of atomic monolayer magnetic materials has stimulated intense research activities in the two-dimensional (2D) van der Waals (vdW) materials community. The field is growing rapidly and there has been a large class of 2D vdW magnetic compounds with unique properties, which provides an ideal platform to study magnetism in the atomically thin limit. In parallel, based on tunneling magnet…
▽ More
The discovery of atomic monolayer magnetic materials has stimulated intense research activities in the two-dimensional (2D) van der Waals (vdW) materials community. The field is growing rapidly and there has been a large class of 2D vdW magnetic compounds with unique properties, which provides an ideal platform to study magnetism in the atomically thin limit. In parallel, based on tunneling magnetoresistance and magneto-optical effect in 2D vdW magnets and their heterostructures, emerging concepts of spintronic and optoelectronic applications such as spin tunnel field-effect transistors and spin-filtering devices are explored. While the magnetic ground state has been extensively investigated, reliable characterization and control of spin dynamics play a crucial role in designing ultrafast spintronic devices. Ferromagnetic resonance (FMR) allows direct measurements of magnetic excitations, which provides insight into the key parameters of magnetic properties such as exchange interaction, magnetic anisotropy, gyromagnetic ratio, spin-orbit coupling, damping rate, and domain structure. In this review article, we present an overview of the essential progress in probing spin dynamics of 2D vdW magnets using FMR techniques. Given the dynamic nature of this field, we focus mainly on broadband FMR, optical FMR, and spin-torque FMR, and their applications in studying prototypical 2D vdW magnets. We conclude with the recent advances in laboratory- and synchrotron-based FMR techniques and their opportunities to broaden the horizon of research pathways into atomically thin magnets.
△ Less
Submitted 28 August, 2023; v1 submitted 24 January, 2023;
originally announced January 2023.
-
Simulation of environmental impacts on the synthesis of carbyne with more than 6000 atoms for emerging continuously tunable energy barriers in CNT-based transistors
Authors:
Chi Ho Wong,
Yan Ming Yeung,
Xin Zhao,
Wing Cheung Law,
Chak-yin Tang,
Chee Leung Mak,
Chi Wah Leung,
Lei Shi,
Rolf Lortz
Abstract:
Transistors made up of carbon nanotubes CNT have demonstrated excellent current-voltage characteristics which outperform some high-grade silicon-based transistors. A continuously tunable energy barrier across semiconductor interfaces is desired to make the CNT-based transistors more robust. Despite the direct band gap of carbyne inside a CNT can be widely tuned by strain, the size of carbyne canno…
▽ More
Transistors made up of carbon nanotubes CNT have demonstrated excellent current-voltage characteristics which outperform some high-grade silicon-based transistors. A continuously tunable energy barrier across semiconductor interfaces is desired to make the CNT-based transistors more robust. Despite the direct band gap of carbyne inside a CNT can be widely tuned by strain, the size of carbyne cannot be controlled easily. The production of a monoatomic chain with more than 6000 carbon atoms is an enormous technological challenge. To predict the optimal chain length of a carbyne in different molecular environments, we have developed a Monte Carlo model in which a finite-length carbyne with a size of 4000-15000 atoms is encapsulated by a CNT at finite temperatures. Our simulation shows that the stability of the carbyne@nanotube is strongly influenced by the nature and porosity of the CNT, the external pressure, the temperature and the chain length. We have observed an initiation of chain-breaking process in a compressed carbyne@nanotube. Our work provides much needed input for optimising the carbyne length to produce carbon chains much longer than 6000 atoms at ~300K. Design rules are proposed for synthesizing ~1% strained carbyne@(6,5)CNT as a component in CNT-based transistors to tune the energy barriers continuously.
△ Less
Submitted 19 January, 2023;
originally announced January 2023.
-
Ferroelectrically switchable magnetic multistates in MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and MnSb$_2$Te$_4$(Sb$_2$Te$_3$)$_n$ (n = 0, 1) thin films
Authors:
Guoliang Yu,
Chuhan Tang,
Zhiqiang Tian,
Ziming Zhu,
Anlian Pan,
Mingxing Chen,
Xing-Qiu Chen
Abstract:
Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here, we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically…
▽ More
Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here, we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically manipulating the interlayer magnetic couplings (IMCs) based on the Heisenberg model and first-principles calculations. Our strategy relies on that interfacing the thin films with appropriate ferroelectric materials can switch on/off an interlayer hopping channel between Mn-$e_g$ orbitals as the polarizations reversed, thus resulting in a switchable interlayer antiferromagnetism-to-ferromagnetism transition. On the other hand, the interface effect leads to asymmetric energy barrier heights for the two polarization states. These properties allow us to build ferroelectrically switchable triple and quadruple magnetic states with multiple Chern numbers in thin films. Our study reveals that ferroelectrically switchable magnetic and topological multistates in MnBi$_2$Te$_4$ family can be obtained by rational design for multifunctional electronic devices, which can also be applied to other two-dimensional magnetic materials.
△ Less
Submitted 27 September, 2023; v1 submitted 1 January, 2023;
originally announced January 2023.
-
Structures and energies of computed silicon (001) small angle mixed grain boundaries as a function of three macroscopic characters
Authors:
Wei Wan,
Changxin Tang
Abstract:
Understanding how dislocation structures vary with grain boundary (GB) characters enables accurate controls of interfacial nano-patterns. In this atomistic study, we report the structure-property correlations of Si (001) small angle mixed grain boundaries (SAMGBs) under three macroscopic GB characters (tilt character, twist character, and an implicit rotation character between them). Firstly, the…
▽ More
Understanding how dislocation structures vary with grain boundary (GB) characters enables accurate controls of interfacial nano-patterns. In this atomistic study, we report the structure-property correlations of Si (001) small angle mixed grain boundaries (SAMGBs) under three macroscopic GB characters (tilt character, twist character, and an implicit rotation character between them). Firstly, the SAMGB energies are computed as a function of tilt angle, twist angle and rotation angle, based on which a revised Read-Shockley relationship capable of precisely describing the energy variations span the three-dimensional GB character space is fitted. Secondly, GB structural transitions from dislocation to amorphous structures are given as a function of tilt angle, twist angle and dislocation core radii. The proportion, topology and structural signatures of different SAMGB types defined from the ratio between the tilt and twist angles are also presented. Thirdly, by extracting the transformation of metastable SAMGB phases, the formation mechanisms of SAMGB structures are characterized as energetically favorable dislocation glide and reaction, from which the dislocation density function is derived. The relevant results about SAMGB energies and structures are validated and supported by theoretical calculations and experimental observations, respectively.
△ Less
Submitted 22 May, 2023; v1 submitted 30 December, 2022;
originally announced December 2022.