Showing 1–40 of 40 results for author: Tan, K Y

Enhancement of Electric Drive in Silicon Quantum Dots with Electric Quadrupole Spin Resonance

Authors: Philip Y. Mai, Pedro H. Pereira, Lucas Andrade Alonso, Ross C. C. Leon, Chih Hwan Yang, Jason C. C. Hwang, Daniel Dunmore, Julien Camirand Lemyre, Tuomo Tanttu, Wister Huang, Kok Wai Chan, Kuan Yen Tan, Jesús D. Cifuentes, Fay E. Hudson, Kohei M. Itoh, Arne Laucht, Michel Pioro-Ladrière, Christopher C. Escott, MengKe Feng, Reinaldo de Melo e Souza, Andrew Dzurak, Andre Saraiva

Abstract: Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or electric fields for electron spin resonance (ESR). In particular, electrical driving allows us to apply localized fields on the electrons, which benefits scale-up architectures. However, we have found that Electric Dipo… ▽ More Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or electric fields for electron spin resonance (ESR). In particular, electrical driving allows us to apply localized fields on the electrons, which benefits scale-up architectures. However, we have found that Electric Dipole Spin Resonance (EDSR) is insufficient for modeling the Rabi behavior in recent experimental studies. Therefore, we propose that the electron spin is being driven by a new method of electric spin qubit control which generalizes the spin dynamics by taking into account a quadrupolar contribution of the quantum dot: electric quadrupole spin resonance (EQSR). In this work, we explore the electric quadrupole driving of a quantum dot in silicon, specifically examining the cases of 5 and 13 electron occupancies. △ Less

Submitted 3 February, 2025; v1 submitted 2 February, 2025; originally announced February 2025.

Comments: Main: 5 pages, 4 figures Supp: 4 pages

Initial experimental results on a superconducting-qubit reset based on photon-assisted quasiparticle tunneling

Authors: V. A. Sevriuk, W. Liu, J. Rönkkö, H. Hsu, F. Marxer, T. F. Mörstedt, M. Partanen, J. Räbinä, M. Venkatesh, J. Hotari, L. Grönberg, J. Heinsoo, T. Li, J. Tuorila, K. W. Chan, J. Hassel, K. Y. Tan, M. Möttönen

Abstract: We present here our recent results on qubit reset scheme based on a quantum-circuit refrigerator (QCR). In particular, we use the photon-assisted quasiparticle tunneling through a superconductor--insulator--normal-metal--insulator--superconductor junction to controllably decrease the energy relaxation time of the qubit during the QCR operation. In our experiment, we use a transmon qubit with dispe… ▽ More We present here our recent results on qubit reset scheme based on a quantum-circuit refrigerator (QCR). In particular, we use the photon-assisted quasiparticle tunneling through a superconductor--insulator--normal-metal--insulator--superconductor junction to controllably decrease the energy relaxation time of the qubit during the QCR operation. In our experiment, we use a transmon qubit with dispersive readout. The QCR is capacitively coupled to the qubit through its normal-metal island. We employ rapid, square-shaped QCR control voltage pulses with durations in the range of 2--350 ns and a variety of amplitudes to optimize the reset time and fidelity. Consequently, we reach a qubit ground-state probability of roughly 97% with 80-ns pulses starting from the first excited state. The qubit state probability is extracted from averaged readout signal, where the calibration is based of the Rabi oscillations, thus not distinguishing the residual thermal population of the qubit. △ Less

Submitted 2 December, 2022; originally announced December 2022.

Journal ref: Appl. Phys. Lett. 121, 234002 (2022)

Photon-number-dependent effective Lamb shift

Authors: Arto Viitanen, Matti Silveri, Máté Jenei, Vasilii Sevriuk, Kuan Yen Tan, Matti Partanen, Jan Goetz, Leif Grönberg, Vasilii Vadimov, Valtteri Lahtinen, Mikko Möttönen

Abstract: The Lamb shift, an energy shift arising from the presence of the electromagnetic vacuum, has been observed in various quantum systems and established as the part of the energy shift independent of the environmental photon number. However, typical studies are based on simplistic bosonic models which may be challenged in practical quantum devices. We demonstrate a hybrid bosonic-fermionic environmen… ▽ More The Lamb shift, an energy shift arising from the presence of the electromagnetic vacuum, has been observed in various quantum systems and established as the part of the energy shift independent of the environmental photon number. However, typical studies are based on simplistic bosonic models which may be challenged in practical quantum devices. We demonstrate a hybrid bosonic-fermionic environment for a linear resonator mode and observe that the photon number in the environment can dramatically increase both the dissipation and the effective Lamb shift of the mode. Our observations are quantitatively described by a first-principles model which we develop here also to guide device design for future quantum-technological applications. The device demonstrated here can be utilized as a fully rf-operated quantum-circuit refrigerator to quickly reset superconducting qubits. △ Less

Submitted 4 August, 2021; v1 submitted 19 August, 2020; originally announced August 2020.

Comments: 15 pages, 10 figures

Journal ref: Phys. Rev. Research 3, 033126 (2021)

Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control

Authors: Amanda Seedhouse, Tuomo Tanttu, Ross C. C. Leon, Ruichen Zhao, Kuan Yen Tan, Bas Hensen, Fay E. Hudson, Kohei M. Itoh, Jun Yoneda, Chih Hwan Yang, Andrea Morello, Arne Laucht, Susan N. Coppersmith, Andre Saraiva, Andrew S. Dzurak

Abstract: Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained… ▽ More Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained only between parallel spin configurations, with $|T_0\rangle$ relaxing quickly to the singlet state and leaving $|T_+\rangle$ and $|T_-\rangle$ states blockaded -- which we call \textit{parity readout}. Both types of blockade can be used for readout in quantum computing, but it is crucial to maximize the fidelity and understand in which regime the system operates. We devise and perform an experiment in which the crossover between parity and singlet-triplet readout can be identified by investigating the underlying physics of the $|T_0\rangle$ relaxation rate. This rate is tunable over four orders of magnitude by controlling the Zeeman energy difference between the dots induced by spin-orbit coupling, which in turn depends on the direction of the applied magnetic field. We suggest a theoretical model incorporating charge noise and relaxation effects that explains quantitatively our results. Investigating the model both analytically and numerically, we identify strategies to obtain on-demand either singlet-triplet or parity readout consistently across large arrays of dots. We also discuss how parity readout can be used to perform full two-qubit state tomography and its impact on quantum error detection schemes in large-scale silicon quantum computers. △ Less

Submitted 13 May, 2021; v1 submitted 15 April, 2020; originally announced April 2020.

Comments: Updated title and text

Journal ref: PRX Quantum 2, 010303 (2021)

Superconducting charge sensor coupled to an electron layer in silicon

Authors: Máté Jenei, Ruichen Zhao, Kuan Y. Tan, Tuomo Tanttu, Kok W. Chan, Yuxin Sun, Vasilii Sevriuk, Fay Hudson, Alessandro Rossi, Andrew Dzurak, Mikko Möttönen

Abstract: Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based charge detector to an electron island defined by field-effect in silicon. The flexibility of our device allows one to tune the coupling using the detector as a… ▽ More Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based charge detector to an electron island defined by field-effect in silicon. The flexibility of our device allows one to tune the coupling using the detector as an additional gate electrode. We study the reliability of the electron sensor in different device configurations and the suitability of various operation modes for error detection in electron pumping experiments. As a result, we obtain a charge detection bandwidth of 5.87 kHz with unity signal to noise ratio at 300 mK bath temperature. △ Less

Submitted 26 September, 2019; originally announced September 2019.

Comments: 7 pages, 6 figures

Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector

Authors: Máté Jenei, Elina Potanina, Ruichen Zhao, Kuan Y. Tan, Alessandro Rossi, Tuomo Tanttu, Kok W. Chan, Vasilii Sevriuk, Mikko Möttönen, Andrew Dzurak

Abstract: We analyze charge fluctuations in a parasitic state strongly coupled to a superconducting Josephson-junction-based charge detector. The charge dynamics of the state resembles that of electron transport in a quantum dot with two charge states, and hence we refer to it as a two-level fluctuator. By constructing the distribution of waiting times from the measured detector signal and comparing it with… ▽ More We analyze charge fluctuations in a parasitic state strongly coupled to a superconducting Josephson-junction-based charge detector. The charge dynamics of the state resembles that of electron transport in a quantum dot with two charge states, and hence we refer to it as a two-level fluctuator. By constructing the distribution of waiting times from the measured detector signal and comparing it with a waiting time theory, we extract the electron in- and out-tunneling rates for the two-level fluctuator, which are severely asymmetric. △ Less

Submitted 13 September, 2019; v1 submitted 6 September, 2019; originally announced September 2019.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. Research 1, 033163 (2019)

Fast control of dissipation in a superconducting resonator

Authors: Vasilii Sevriuk, Kuan Yen Tan, Eric Hyyppä, Matti Silveri, Matti Partanen, Máté Jenei, Shumpei Masuda, Jan Goetz, Visa Vesterinen, Leif Grönberg, Mikko Möttönen

Abstract: We report on fast tunability of an electromagnetic environment coupled to a superconducting coplanar waveguide resonator. Namely, we utilize a recently-developed quantum-circuit refrigerator (QCR) to experimentally demonstrate a dynamic tunability in the total damping rate of the resonator up to almost two orders of magnitude. Based on the theory it corresponds to a change in the internal damping… ▽ More We report on fast tunability of an electromagnetic environment coupled to a superconducting coplanar waveguide resonator. Namely, we utilize a recently-developed quantum-circuit refrigerator (QCR) to experimentally demonstrate a dynamic tunability in the total damping rate of the resonator up to almost two orders of magnitude. Based on the theory it corresponds to a change in the internal damping rate by nearly four orders of magnitude. The control of the QCR is fully electrical, with the shortest implemented operation times in the range of 10 ns. This experiment constitutes a fast active reset of a superconducting quantum circuit. In the future, a similar scheme can potentially be used to initialize superconducting quantum bits. △ Less

Submitted 27 June, 2019; originally announced June 2019.

Comments: 4 pages, 2 figures

Calibration of cryogenic amplification chains using normal-metal--insulator--superconductor junctions

Authors: Eric Hyyppä, Máté Jenei, Shumpei Masuda, Kuan Yen Tan, Matti Silveri, Jan Goetz, Matti Partanen, Russel E. Lake, Leif Grönberg, Mikko Möttönen

Abstract: Various applications of quantum devices call for an accurate calibration of cryogenic amplification chains. To this end, we present a convenient calibration scheme and use it to accurately measure the total gain and noise temperature of an amplification chain by employing normal-metal--insulator--superconductor (NIS) junctions. Our method is based on the radiation emitted by inelastic electron tun… ▽ More Various applications of quantum devices call for an accurate calibration of cryogenic amplification chains. To this end, we present a convenient calibration scheme and use it to accurately measure the total gain and noise temperature of an amplification chain by employing normal-metal--insulator--superconductor (NIS) junctions. Our method is based on the radiation emitted by inelastic electron tunneling across voltage-biased NIS junctions. We derive an analytical equation that relates the generated power to the applied bias voltage which is the only control parameter of the device. After the setup has been characterized using a standard voltage reflection measurement, the total gain and the noise temperature are extracted by fitting the analytical equation to the microwave power measured at the output of the amplification chain. The 1$σ$ uncertainty of the total gain of 51.84 dB appears to be of the order of 0.1 dB. △ Less

Submitted 1 April, 2019; originally announced April 2019.

Comments: 5 pages, 3 figures

Silicon quantum processor unit cell operation above one Kelvin

Authors: C. H. Yang, R. C. C. Leon, J. C. C. Hwang, A. Saraiva, T. Tanttu, W. Huang, J. Camirand Lemyre, K. W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, M. Pioro-Ladrière, A. Laucht, A. S. Dzurak

Abstract: Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every addit… ▽ More Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every additional qubit increases the heat generated, while the cooling power of dilution refrigerators is severely limited at their operating temperature below 100 mK. Here we demonstrate operation of a scalable silicon quantum processor unit cell, comprising two qubits confined to quantum dots (QDs) at $\sim$1.5 Kelvin. We achieve this by isolating the QDs from the electron reservoir, initialising and reading the qubits solely via tunnelling of electrons between the two QDs. We coherently control the qubits using electrically-driven spin resonance (EDSR) in isotopically enriched silicon $^{28}$Si, attaining single-qubit gate fidelities of 98.6% and coherence time $T_2^*$ = 2$μ$s during `hot' operation, comparable to those of spin qubits in natural silicon at millikelvin temperatures. Furthermore, we show that the unit cell can be operated at magnetic fields as low as 0.1 T, corresponding to a qubit control frequency of 3.5 GHz, where the qubit energy is well below the thermal energy. The unit cell constitutes the core building block of a full-scale silicon quantum computer, and satisfies layout constraints required by error correction architectures. Our work indicates that a spin-based quantum computer could be operated at elevated temperatures in a simple pumped $^4$He system, offering orders of magnitude higher cooling power than dilution refrigerators, potentially enabling classical control electronics to be integrated with the qubit array. △ Less

Submitted 19 June, 2019; v1 submitted 25 February, 2019; originally announced February 2019.

Journal ref: Nature 580, 350-354 (2020)

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Authors: R. C. C. Leon, C. H. Yang, J. C. C. Hwang, J. Camirand Lemyre, T. Tanttu, W. Huang, K. W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, A. Laucht, M. Pioro-Ladriere, A. Saraiva, A. S. Dzurak

Abstract: Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, di… ▽ More Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, disrupt this analogy between atoms and quantum dots, so that real devices seldom display such a systematic many-electron arrangement. We demonstrate here an electrostatically-defined quantum dot that is robust to disorder, revealing a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. We explore various fillings consisting of a single valence electron -- namely 1, 5, 13 and 25 electrons -- as potential qubits, and we identify fillings that yield a total spin-1 on the dot. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR). Higher shell states are shown to be more susceptible to the driving field, leading to faster Rabi rotations of the qubit. We investigate the impact of orbital excitations of the p- and d-shell electrons on single qubits as a function of the dot deformation. This allows us to tune the dot excitation spectrum and exploit it for faster qubit control. Furthermore, hotspots arising from this tunable energy level structure provide a pathway towards fast spin initialisation. The observation of spin-1 states may be exploited in the future to study symmetry-protected topological states in antiferromagnetic spin chains and their application to quantum computing. △ Less

Submitted 6 May, 2019; v1 submitted 5 February, 2019; originally announced February 2019.

Journal ref: Nature Communications 11, 797 (2020)

Single-spin qubits in isotopically enriched silicon at low magnetic field

Authors: R. Zhao, T. Tanttu, K. Y. Tan, B. Hensen, K. W. Chan, J. C. C. Hwang, R. C. C. Leon, C. H. Yang, W. Gilbert, F. E. Hudson, K. M. Itoh, A. A. Kiselev, T. D. Ladd, A. Morello, A. Laucht, A. S. Dzurak

Abstract: Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) rea… ▽ More Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon (MOS) quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with $T_{2}^{Rabi}=18.6$~$μ$s and $T_2^*=1.4$~$μ$s at 150~mT. Their coherence is limited by spin flips of residual $^{29}$Si nuclei in the isotopically enriched $^{28}$Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor. △ Less

Submitted 23 August, 2019; v1 submitted 19 December, 2018; originally announced December 2018.

Journal ref: Nat Commun 10, 5500 (2019)

Optimized heat transfer at exceptional points in quantum circuits

Authors: Matti Partanen, Jan Goetz, Kuan Yen Tan, Kassius Kohvakka, Vasilii Sevriuk, Russell E. Lake, Roope Kokkoniemi, Joni Ikonen, Dibyendu Hazra, Akseli Mäkinen, Eric Hyyppä, Leif Grönberg, Visa Vesterinen, Matti Silveri, Mikko Möttönen

Abstract: Superconducting quantum circuits are potential candidates to realize a large-scale quantum computer. The envisioned large density of integrated components, however, requires a proper thermal management and control of dissipation. To this end, it is advantageous to utilize tunable dissipation channels and to exploit the optimized heat flow at exceptional points (EPs). Here, we experimentally realiz… ▽ More Superconducting quantum circuits are potential candidates to realize a large-scale quantum computer. The envisioned large density of integrated components, however, requires a proper thermal management and control of dissipation. To this end, it is advantageous to utilize tunable dissipation channels and to exploit the optimized heat flow at exceptional points (EPs). Here, we experimentally realize an EP in a superconducting microwave circuit consisting of two resonators. The EP is a singularity point of the Hamiltonian, and corresponds to the most efficient heat transfer between the resonators without oscillation of energy. We observe a crossover from underdamped to overdamped coupling via the EP by utilizing photon-assisted tunneling as an \emph{in situ} tunable dissipative element in one of the resonators. The methods studied here can be applied to different circuits to obtain fast dissipation, for example, for initializing qubits to their ground states. In addition, these results pave the way towards thorough investigation of parity--time ($\mathcal{PT}$) symmetric systems and the spontaneous symmetry breaking in superconducting microwave circuits operating at the level of single energy quanta. △ Less

Submitted 6 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. B 100, 134505 (2019)

Observation of a broadband Lamb shift in an engineered quantum system

Authors: Matti Silveri, Shumpei Masuda, Vasilii Sevriuk, Kuan Y. Tan, Máté Jenei, Eric Hyyppä, Fabian Hassler, Matti Partanen, Jan Goetz, Russell E. Lake, Leif Grönberg, Mikko Möttönen

Abstract: The shift of energy levels owing to broadband electromagnetic vacuum fluctuations, the Lamb shift, has been pivotal in the development of quantum electrodynamics and in understanding atomic spectra. Currently, small energy shifts in engineered quantum systems are of paramount importance owing to the extreme precision requirements in applications such as quantum computing. However, without a tunabl… ▽ More The shift of energy levels owing to broadband electromagnetic vacuum fluctuations, the Lamb shift, has been pivotal in the development of quantum electrodynamics and in understanding atomic spectra. Currently, small energy shifts in engineered quantum systems are of paramount importance owing to the extreme precision requirements in applications such as quantum computing. However, without a tunable environment it is challenging to resolve the Lamb shift in its original broadband case. Consequently, the observations in other than atomic systems are limited to environments comprised of narrow-band modes. Here, we observe a broadband Lamb shift in high-quality superconducting resonators, a scenario also accessing static shifts inaccessible in Lamb's experiment. We measure a continuous change of several megahertz in the fundamental resonator frequency by externally tuning the coupling strength of the engineered broadband environment which is based on hybrid normal-metal--superconductor tunnel junctions. Our results may lead to improved control of dissipation in high-quality engineered quantum systems and open new possibilities for studying synthetic open quantum matter using this hybrid experimental platform. △ Less

Submitted 1 February, 2019; v1 submitted 4 September, 2018; originally announced September 2018.

Journal ref: Nat. Phys. 15, 533 (2019)

Nanobolometer with Ultralow Noise Equivalent Power

Authors: R. Kokkoniemi, J. Govenius, V. Vesterinen, R. E. Lake, A. M. Gunyho, K. Y. Tan, S. Simbierowicz, L. Grönberg, J. Lehtinen, M. Prunnila, J. Hassel, O. -P. Saira, M. Möttönen

Abstract: Since the introduction of bolometers more than a century ago, they have been applied in a broad spectrum of contexts ranging from security and the construction industry to particle physics and astronomy. However, emerging technologies and missions call for faster bolometers with lower noise. Here, we demonstrate a nanobolometer that exhibits roughly an order of magnitude lower noise equivalent pow… ▽ More Since the introduction of bolometers more than a century ago, they have been applied in a broad spectrum of contexts ranging from security and the construction industry to particle physics and astronomy. However, emerging technologies and missions call for faster bolometers with lower noise. Here, we demonstrate a nanobolometer that exhibits roughly an order of magnitude lower noise equivalent power, $20\textrm{ zW}/\sqrt{\textrm{Hz}}$, than previously reported for any bolometer. Importantly, it is more than an order of magnitude faster than other low-noise bolometers, with a time constant of 30 $μ$s at $60\textrm{ zW}/\sqrt{\textrm{Hz}}$. These results suggest a calorimetric energy resolution of $0.3\textrm{ zJ}=h\times 0.4$ THz with a time constant of 30 $μ$s. Thus the introduced nanobolometer is a promising candidate for future applications requiring extreme precision and speed such as those in astronomy and terahertz photon counting. △ Less

Submitted 26 June, 2018; v1 submitted 25 June, 2018; originally announced June 2018.

Flux-tunable heat sink for quantum electric circuits

Authors: Matti Partanen, Kuan Yen Tan, Shumpei Masuda, Joonas Govenius, Russell E. Lake, Máté Jenei, Leif Grönberg, Juha Hassel, Slawomir Simbierowicz, Visa Vesterinen, Jani Tuorila, Tapio Ala-Nissila, Mikko Möttönen

Abstract: Superconducting microwave circuits show great potential for practical quantum technological applications such as quantum information processing. However, fast and on-demand initialization of the quantum degrees of freedom in these devices remains a challenge. Here, we experimentally implement a tunable heat sink that is potentially suitable for the initialization of superconducting qubits. Our dev… ▽ More Superconducting microwave circuits show great potential for practical quantum technological applications such as quantum information processing. However, fast and on-demand initialization of the quantum degrees of freedom in these devices remains a challenge. Here, we experimentally implement a tunable heat sink that is potentially suitable for the initialization of superconducting qubits. Our device consists of two coupled resonators. The first resonator has a high quality factor and a fixed frequency whereas the second resonator is designed to have a low quality factor and a tunable resonance frequency. We engineer the low quality factor using an on-chip resistor and the frequency tunability using a superconducting quantum interference device. When the two resonators are in resonance, the photons in the high-quality resonator can be efficiently dissipated. We show that the corresponding loaded quality factor can be tuned from above $10^5$ down to a few thousand at 10 GHz in good quantitative agreement with our theoretical model. △ Less

Submitted 29 December, 2017; originally announced December 2017.

Theory of quantum-circuit refrigeration by photon-assisted electron tunneling

Authors: Matti Silveri, Hermann Grabert, Shumpei Masuda, Kuan Yen Tan, Mikko Möttönen

Abstract: We focus on a recently experimentally realized scenario of normal-metal-insulator-superconductor tunnel junctions coupled to a superconducting resonator. We develop a first-principles theory to describe the effect of photon-assisted electron tunneling on the quantum state of the resonator. Our results are in very good quantitative agreement with the previous experiments on refrigeration and heatin… ▽ More We focus on a recently experimentally realized scenario of normal-metal-insulator-superconductor tunnel junctions coupled to a superconducting resonator. We develop a first-principles theory to describe the effect of photon-assisted electron tunneling on the quantum state of the resonator. Our results are in very good quantitative agreement with the previous experiments on refrigeration and heating of the resonator using the photon-assisted tunneling, thus providing a stringent verification of the developed theory. Importantly, our results provide simple analytical estimates of the voltage-tunable coupling strength and temperature of the thermal reservoir formed by the photon-assisted tunneling. Consequently, they are used to introduce optimization principles for initialization of quantum devices using such a quantum-circuit refrigerator. Thanks to the first-principles nature of our approach, extension of the theory to the full spectrum of quantum electric devices seems plausible. △ Less

Submitted 28 September, 2017; v1 submitted 22 June, 2017; originally announced June 2017.

Comments: Published version

Journal ref: Phys. Rev. B 96, 094524 (2017)

Spin-selective electron transfer in quantum dot array

Authors: Shumpei Masuda, Kuan Yen Tan, Mikio Nakahara

Abstract: We propose a spin-selective coherent electron transfer in a silicon-quantum-dot array. Oscillating magnetic fields and temporally controlled gate voltages are utilised to separate the electron wave function into different quantum dots depending on the spin state. We introduce non-adiabatic and adiabatic protocols which offer fast electron transfer and the robustness against the error in the contro… ▽ More We propose a spin-selective coherent electron transfer in a silicon-quantum-dot array. Oscillating magnetic fields and temporally controlled gate voltages are utilised to separate the electron wave function into different quantum dots depending on the spin state. We introduce non-adiabatic and adiabatic protocols which offer fast electron transfer and the robustness against the error in the control-field pulse area, respectively. We also study a shortcut-to-adiabaticity protocol which compromises these two protocols. We show that this scheme can be extended to multi-electron systems straightforwardly and used for non-local manipulations of the electrons. △ Less

Submitted 20 November, 2017; v1 submitted 26 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. B 97, 045418 (2018)

Cryogenic microwave source based on nanoscale tunnel junctions

Authors: Shumpei Masuda, Kuan Y. Tan, Matti Partanen, Russell E. Lake, Joonas Govenius, Matti Silveri, Hermann Grabert, Mikko Möttönen

Abstract: We experimentally realize an incoherent microwave source driven by voltage-controlled quantum tunneling of electrons through nanoscale normal-metal--insulator--superconductor junctions coupled to a resonator. We observe the direct conversion of the electronic energy into microwave photons by measuring the power spectrum of the microwave radiation emitted from the resonator. The demonstrated total… ▽ More We experimentally realize an incoherent microwave source driven by voltage-controlled quantum tunneling of electrons through nanoscale normal-metal--insulator--superconductor junctions coupled to a resonator. We observe the direct conversion of the electronic energy into microwave photons by measuring the power spectrum of the microwave radiation emitted from the resonator. The demonstrated total output power exceeds that of 2.5-K thermal radiation although the photon and electron reservoirs are at subkelvin temperatures. Measurements of the output power quantitatively agree with a theoretical model in a wide range of the bias voltages providing information on the electrically-controlled photon creation. The developed photon source is fully compatible with low-temperature electronics and offers convenient in-situ electrical control of the photon emission rate with a predetermined frequency, without relying on intrinsic voltage fluctuations of heated normal-metal components nor suffering from unwanted dissipation in room temperature cables. In addition to its potential applications in microwave photonics, our results provide complementary verification of the working principles of the recently discovered quantum-circuit refrigerator. △ Less

Submitted 20 December, 2016; originally announced December 2016.

Microwave Admittance of Gold-Palladium Nanowires with Proximity-Induced Superconductivity

Authors: Russell E. Lake, Joonas Govenius, Roope Kokkoniemi, Kuan Yen Tan, Matti Partanen, Pauli Virtanen, Mikko Möttönen

Abstract: We report quantitative electrical admittance measurements of diffusive superconductor--normal-metal--superconductor (SNS) junctions at gigahertz frequencies and millikelvin temperatures. The gold-palladium-based SNS junctions are arranged into a chain of superconducting quantum interference devices. The chain is coupled strongly to a multimode microwave resonator with a mode spacing of approximate… ▽ More We report quantitative electrical admittance measurements of diffusive superconductor--normal-metal--superconductor (SNS) junctions at gigahertz frequencies and millikelvin temperatures. The gold-palladium-based SNS junctions are arranged into a chain of superconducting quantum interference devices. The chain is coupled strongly to a multimode microwave resonator with a mode spacing of approximately 0.6 GHz. By measuring the resonance frequencies and quality factors of the resonator modes, we extract the dissipative and reactive parts of the admittance of the chain. We compare the phase and temperature dependence of the admittance near 1 GHz to theory based on the time-dependent Usadel equations. This comparison allows us to identify important discrepancies between theory and experiment that are not resolved by including inelastic scattering or elastic spin-flip scattering in the theory. △ Less

Submitted 9 March, 2017; v1 submitted 29 July, 2016; originally announced July 2016.

Comments: 8 pages, 6 figures

Journal ref: Adv. Electron. Mater. 2017, 1600227

Quantum Circuit Refrigerator

Authors: Kuan Yen Tan, Matti Partanen, Russell E. Lake, Joonas Govenius, Shumpei Masuda, Mikko Möttönen

Abstract: Quantum technology promises revolutionizing applications in information processing, communications, sensing, and modelling. However, efficient on-demand cooling of the functional quantum degrees of freedom remains a major challenge in many solid-state implementations, such as superconducting circuits. Here, we demonstrate direct cooling of a superconducting resonator mode using voltage-controllabl… ▽ More Quantum technology promises revolutionizing applications in information processing, communications, sensing, and modelling. However, efficient on-demand cooling of the functional quantum degrees of freedom remains a major challenge in many solid-state implementations, such as superconducting circuits. Here, we demonstrate direct cooling of a superconducting resonator mode using voltage-controllable quantum tunneling of electrons in a nanoscale refrigerator. This result is revealed by a decreased electron temperature at a resonator-coupled probe resistor, even when the electrons in the refrigerator itself are at an elevated temperature. Our conclusions are verified by control experiments and by a good quantitative agreement between a detailed theoretical model and the direct experimental observations in a broad range of operation voltages and phonon bath temperatures. In the future, the introduced refrigerator can be integrated with different quantum electric devices, potentially enhancing their performance. For the superconducting quantum computer, for example, it may provide an efficient way of initializing the quantum bits. △ Less

Submitted 17 March, 2017; v1 submitted 15 June, 2016; originally announced June 2016.

Comments: 26 pages, 9 figures

Journal ref: Nature Communications 8, 15189 (2017)

Three-waveform bidirectional pumping of single electrons with a silicon quantum dot

Authors: Tuomo Tanttu, Alessandro Rossi, Kuan Yen Tan, Akseli Mäkinen, Kok Wai Chan, Andrew S. Dzurak, Mikko Möttönen

Abstract: Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon quantum dot single-electron pump with radio frequency control over the transparencies of entrance and exit barriers as well as the dot potential. We show that our… ▽ More Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon quantum dot single-electron pump with radio frequency control over the transparencies of entrance and exit barriers as well as the dot potential. We show that our driving protocol leads to robust bidirectional pumping: one can conveniently reverse the direction of the quantized current by changing only the phase shift of one driving waveform with respect to the others. We also study the improvement in the robustness of the current quantization owing to the introduction of three control voltages in comparison with the two-waveform driving. We anticipate that this pumping technique may be used in the future to perform error counting experiments by pumping the electrons into and out of a reservoir island monitored by a charge sensor. △ Less

Submitted 26 April, 2016; v1 submitted 3 March, 2016; originally announced March 2016.

Comments: 9 pages, 3 figures

Detection of zeptojoule microwave pulses using electrothermal feedback in proximity-induced Josephson junctions

Authors: J. Govenius, R. E. Lake, K. Y. Tan, M. Möttönen

Abstract: We experimentally investigate and utilize electrothermal feedback in a microwave nanobolometer based on a normal-metal ($\mbox{Au}_{x}\mbox{Pd}_{1-x}$) nanowire with proximity-induced superconductivity. The feedback couples the temperature and the electrical degrees of freedom in the nanowire, which both absorbs the incoming microwave radiation, and transduces the temperature change into a radio-f… ▽ More We experimentally investigate and utilize electrothermal feedback in a microwave nanobolometer based on a normal-metal ($\mbox{Au}_{x}\mbox{Pd}_{1-x}$) nanowire with proximity-induced superconductivity. The feedback couples the temperature and the electrical degrees of freedom in the nanowire, which both absorbs the incoming microwave radiation, and transduces the temperature change into a radio-frequency electrical signal. We tune the feedback in situ and access both positive and negative feedback regimes with rich nonlinear dynamics. In particular, strong positive feedback leads to the emergence of two metastable electron temperature states in the millikelvin range. We use these states for efficient threshold detection of coherent 8.4 GHz microwave pulses containing approximately 200 photons on average, corresponding to $1.1 \mbox{ zJ} \approx 7.0 \mbox{ meV}$ of energy. △ Less

Submitted 14 June, 2016; v1 submitted 22 December, 2015; originally announced December 2015.

Journal ref: Phys. Rev. Lett. 117, 030802 (2016)

Observation of quantum-limited heat conduction over macroscopic distances

Authors: Matti Partanen, Kuan Yen Tan, Joonas Govenius, Russell E. Lake, Miika K. Mäkelä, Tuomo Tanttu, Mikko Möttönen

Abstract: The emerging quantum technological apparatuses [1,2], such as the quantum computer [3-5], call for extreme performance in thermal engineering at the nanoscale [6]. Importantly, quantum mechanics sets a fundamental upper limit for the flow of information and heat, which is quantified by the quantum of thermal conductance [7,8]. The physics of this kind of quantum-limited heat conduction has been ex… ▽ More The emerging quantum technological apparatuses [1,2], such as the quantum computer [3-5], call for extreme performance in thermal engineering at the nanoscale [6]. Importantly, quantum mechanics sets a fundamental upper limit for the flow of information and heat, which is quantified by the quantum of thermal conductance [7,8]. The physics of this kind of quantum-limited heat conduction has been experimentally studied for lattice vibrations, or phonons [9], for electromagnetic interactions [10], and for electrons [11]. However, the short distance between the heat-exchanging bodies in the previous experiments hinders the applicability of these systems in quantum technology. Here, we present experimental observations of quantum-limited heat conduction over macroscopic distances extending to a metre. We achieved this striking improvement of four orders of magnitude in the distance by utilizing microwave photons travelling in superconducting transmission lines. Thus it seems that quantum-limited heat conduction has no fundamental restriction in its distance. This work lays the foundation for the integration of normal-metal components into superconducting transmission lines, and hence provides an important tool for circuit quantum electrodynamics [12-14], which is the basis of the emerging superconducting quantum computer [15]. In particular, our results demonstrate that cooling of nanoelectronic devices can be carried out remotely with the help of a far-away engineered heat sink. In addition, quantum-limited heat conduction plays an important role in the contemporary studies of thermodynamics such as fluctuation relations and Maxwell's demon [16,17]. Here, the long distance provided by our results may, for example, lead to an ultimate efficiency of mesoscopic heat engines with promising practical applications [18]. △ Less

Submitted 14 October, 2015; originally announced October 2015.

Comments: 10 pages, 6 figures

Electron counting in a silicon single-electron pump

Authors: Tuomo Tanttu, Alessandro Rossi, Kuan Yen Tan, Kukka-Emilia Huhtinen, Kok Wai Chan, Mikko Möttönen, Andrew S. Dzurak

Abstract: We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million. Single-shot detection of electrons pumped into a reservoir dot is performed using a capacitively coupled single-electron transistor. We extract the full probabil… ▽ More We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million. Single-shot detection of electrons pumped into a reservoir dot is performed using a capacitively coupled single-electron transistor. We extract the full probability distribution of the transfer of n electrons per pumping cycle for n = 0, 1, 2, 3, and 4. We find that the probabilities extracted from the counting experiment are in agreement with direct current measurements in a broad range of dc electrochemical potentials of the pump. The electron counting technique is also used to confirm the improving robustness of the pumping mechanism with increasing electrostatic confinement of the quantum dot. △ Less

Submitted 25 September, 2015; v1 submitted 16 February, 2015; originally announced February 2015.

Comments: 4 pages, 3 figures

Coherent Control of a Single Silicon-29 Nuclear Spin Qubit

Authors: Jarryd J. Pla, Fahd A. Mohiyaddin, Kuan Y. Tan, Juan P. Dehollain, Rajib Rahman, Gerhard Klimeck, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spi… ▽ More Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spin. The quantum non-demolition (QND) single-shot readout of the spin is demonstrated, and a Hahn echo measurement reveals a coherence time of $T_2 = 6.3(7)$ ms - in excellent agreement with bulk experiments. Atomistic modeling combined with extracted experimental parameters provides possible lattice sites for the $^{29}$Si atom under investigation. These results demonstrate that single $^{29}$Si nuclear spins could serve as a valuable resource in a silicon spin-based quantum computer. △ Less

Submitted 6 August, 2014; originally announced August 2014.

Journal ref: Phys. Rev. Lett. 113, 246801 (2014)

An accurate single-electron pump based on a highly tunable silicon quantum dot

Authors: A. Rossi, T. Tanttu, K. Y. Tan, I. Iisakka, R. Zhao, K. W. Chan, G. C. Tettamanzi, S. Rogge, A. S. Dzurak, M. Möttönen

Abstract: Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confin… ▽ More Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confinement of the dot using purposely engineered gate electrodes. Improvements in the operational robustness, as well as suppression of non-adiabatic transitions that reduce pumping accuracy, are achieved via small adjustments of the gate voltages. We can produce an output current in excess of 80 pA with experimentally determined relative uncertainty below 50 parts per million. △ Less

Submitted 5 June, 2014; originally announced June 2014.

Comments: 12 pages, 7 figures, includes supplementary information, Nano Letters (2014)

Journal ref: Nano Letters (2014), 14(6), pp. 3405-3411

Microwave nanobolometer based on proximity Josephson junctions

Authors: J. Govenius, R. E. Lake, K. Y. Tan, V. Pietilä, J. K. Julin, I. J. Maasilta, P. Virtanen, M. Möttönen

Abstract: We introduce a microwave bolometer aimed at high-quantum-efficiency detection of wave packet energy within the framework of circuit quantum electrodynamics, the ultimate goal being single microwave photon detection. We measure the differential thermal conductance between the detector and its heat bath, obtaining values as low as 5 fW/K at 50 mK. This is one tenth of the thermal conductance quantum… ▽ More We introduce a microwave bolometer aimed at high-quantum-efficiency detection of wave packet energy within the framework of circuit quantum electrodynamics, the ultimate goal being single microwave photon detection. We measure the differential thermal conductance between the detector and its heat bath, obtaining values as low as 5 fW/K at 50 mK. This is one tenth of the thermal conductance quantum and corresponds to a theoretical lower bound on noise-equivalent-power of order $10^{-20}$ $W/\sqrt{\mbox{Hz}}$ at 50 mK. By measuring the differential thermal conductance of the same bolometer design in qualitatively different environments and materials, we determine that electron--photon coupling dominates the thermalization of our nanobolometer. △ Less

Submitted 30 July, 2014; v1 submitted 26 March, 2014; originally announced March 2014.

Journal ref: Phys. Rev. B 90, 064505 (2014)

Single-shot readout and relaxation of singlet/triplet states in exchange-coupled $^{31}$P electron spins in silicon

Authors: Juan P. Dehollain, Juha T. Muhonen, Kuan Y. Tan, André Saraiva, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: We present the experimental observation of a large exchange coupling $J \approx 300$ $μ$eV between two $^{31}$P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. Th… ▽ More We present the experimental observation of a large exchange coupling $J \approx 300$ $μ$eV between two $^{31}$P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. The triplet to singlet relaxation time $T_1 \approx 4$ ms at zero magnetic field agrees with the theoretical prediction for $J$-coupled $^{31}$P dimers in silicon. The time evolution of the 2-electron state populations gives further insight into the valley-orbit eigenstates of the donor dimer, valley selection rules and relaxation rates, and the role of hyperfine interactions. These results pave the way to the realization of 2-qubit quantum logic gates with spins in silicon, and highlight the necessity to adopt gating schemes compatible with weak $J$-coupling strengths. △ Less

Submitted 11 June, 2014; v1 submitted 28 February, 2014; originally announced February 2014.

Comments: Main: 5 pages, 4 figures. Supp.Mat: 1 page, 1 figure. Final version with journal reference

Journal ref: Phys. Rev. Lett. 112, 236801 (2014)

Reaction method control of impurity scattering in C-doped MgB2, proving the role of defects besides C substitution level

Authors: S K Chen, K Y Tan, A S Halim, X Xu, K S B De Silva, W K Yeoh, S X Dou, A Kursumovic, J L MacManus-Driscoll

Abstract: In this study, Si and C were incorporated into polycrystalline MgB2 via in situ reaction of Mg and B with either SiC or with separate Si and C (Si+C). The electrical transport and magnetic properties of the two series of samples were compared. The corrected resistivity at 40K, Rho A(40K), is higher for the SiC reacted samples regardless of carbon (C) substitution level, indicating larger intragrai… ▽ More In this study, Si and C were incorporated into polycrystalline MgB2 via in situ reaction of Mg and B with either SiC or with separate Si and C (Si+C). The electrical transport and magnetic properties of the two series of samples were compared. The corrected resistivity at 40K, Rho A(40K), is higher for the SiC reacted samples regardless of carbon (C) substitution level, indicating larger intragrain scattering because of the simultaneous reaction between Mg and SiC and carbon substitution during the formation of MgB2. In addition, because of the cleaner reaction route for the SiC reacted samples, the calculated active area that carries current, AF, is twice that of the (Si+C) samples. On the other hand, the upper critical field, Hc2, was similar for both sets of samples despite their different C substitution levels which proves the importance of defect scattering in addition to C substitution level. Hence, the form of the precursor reactants is critical for tuning the form of Hc2(T). △ Less

Submitted 30 October, 2013; originally announced October 2013.

Comments: accepted for publication

Report number: Supercond. Sci. Technol. 26 125018

A single-atom electron spin qubit in silicon

Authors: Jarryd J. Pla, Kuan Y. Tan, Juan P. Dehollain, Wee H. Lim, John J. L. Morton, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from f… ▽ More A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger scale quantum processors. In this direction, coherent control of spin qubits has been achieved in lithographically-defined double quantum dots in both GaAs and Si. However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent to atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot readout. We use electron spin resonance to drive Rabi oscillations, while a Hahn echo pulse sequence reveals a spin coherence time (T2) exceeding 200 μs. This figure is expected to become even longer in isotopically enriched 28Si samples. Together with the use of a device architecture that is compatible with modern integrated circuit technology, these results indicate that the electron spin of a single phosphorus atom in silicon is an excellent platform on which to build a scalable quantum computer. △ Less

Submitted 20 May, 2013; originally announced May 2013.

Comments: 13 pages, 4 figures

Journal ref: Nature 489, 541 (2012)

Tunable electromagnetic environment for superconducting quantum bits

Authors: P. J. Jones, J. A. M. Huhtamäki, J. Salmilehto, K. Y. Tan, M. Möttönen

Abstract: We introduce a setup which realises a tunable engineered environment for experiments in circuit quantum electrodynamics. We illustrate this concept with the specific example of a quantum bit, qubit, in a high-quality-factor cavity which is capacitively coupled to another cavity including a resistor. The temperature of the resistor, which acts as the dissipative environment, can be controlled in a… ▽ More We introduce a setup which realises a tunable engineered environment for experiments in circuit quantum electrodynamics. We illustrate this concept with the specific example of a quantum bit, qubit, in a high-quality-factor cavity which is capacitively coupled to another cavity including a resistor. The temperature of the resistor, which acts as the dissipative environment, can be controlled in a well defined manner in order to provide a hot or cold environment for the qubit, as desired. Furthermore, introducing superconducting quantum interference devices (SQUIDs) into the cavity containing the resistor, provides control of the coupling strength between this artificial environment and the qubit. We demonstrate that our scheme allows us to couple strongly to the environment enabling rapid initialization of the system, and by subsequent tuning of the magnetic flux of the SQUIDs we may greatly reduce the resistor-qubit coupling, allowing the qubit to evolve unhindered. △ Less

Submitted 13 June, 2013; v1 submitted 15 February, 2013; originally announced February 2013.

Comments: 11 pages, 5 figures, final version

Journal ref: Sci. Rep. 3, 1987 (2013)

High-fidelity readout and control of a nuclear spin qubit in silicon

Authors: Jarryd J. Pla, Kuan Y. Tan, Juan P. Dehollain, Wee H. Lim, John J. L. Morton, Floris A. Zwanenburg, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the qu… ▽ More A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the quantum non-demolition, electrical single-shot readout of the nuclear spin, with readout fidelity better than 99.8% - the highest for any solid-state qubit. The single nuclear spin is then operated as a qubit by applying coherent radiofrequency (RF) pulses. For an ionized 31P donor we find a nuclear spin coherence time of 60 ms and a 1-qubit gate control fidelity exceeding 98%. These results demonstrate that the dominant technology of modern electronics can be adapted to host a complete electrical measurement and control platform for nuclear spin-based quantum information processing. △ Less

Submitted 31 January, 2013; originally announced February 2013.

Comments: 18 pages, 5 figures

Journal ref: Nature 496, 334 (2013)

Nanoscale broadband transmission lines for spin qubit control

Authors: J. P. Dehollain, J. J. Pla, E. Siew, K. Y. Tan, A. S. Dzurak, A. Morello

Abstract: The intense interest in spin-based quantum information processing has caused an increasing overlap between two traditionally distinct disciplines, such as magnetic resonance and nanotechnology. In this work we discuss rigourous design guidelines to integrate microwave circuits with charge-sensitive nanostructures, and describe how to simulate such structures accurately and efficiently. We present… ▽ More The intense interest in spin-based quantum information processing has caused an increasing overlap between two traditionally distinct disciplines, such as magnetic resonance and nanotechnology. In this work we discuss rigourous design guidelines to integrate microwave circuits with charge-sensitive nanostructures, and describe how to simulate such structures accurately and efficiently. We present a new design for an on-chip, broadband, nanoscale microwave line that optimizes the magnetic field driving a spin qubit, while minimizing the disturbance on a nearby charge sensor. This new structure was successfully employed in a single-spin qubit experiment, and shows that the simulations accurately predict the magnetic field values even at frequencies as high as 30 GHz. △ Less

Submitted 23 January, 2013; v1 submitted 12 August, 2012; originally announced August 2012.

Comments: 18 pages, 8 figures, 1 table, pdflatex

Journal ref: Nanotechnology 24 (2013) 015202

Tunable single-photon heat conduction in electrical circuits

Authors: P. J. Jones, J. A. M. Huhtamäki, M. Partanen, K. Y. Tan, M. Möttönen

Abstract: We build on the study of single-photon heat conduction in electronic circuits taking into account the back-action of the superconductor--insulator--normal-metal thermometers. In addition, we show that placing capacitors, resistors, and superconducting quantum interference devices (SQUIDs) into a microwave cavity can severely distort the spatial current profile which, in general, should be accounte… ▽ More We build on the study of single-photon heat conduction in electronic circuits taking into account the back-action of the superconductor--insulator--normal-metal thermometers. In addition, we show that placing capacitors, resistors, and superconducting quantum interference devices (SQUIDs) into a microwave cavity can severely distort the spatial current profile which, in general, should be accounted for in circuit design. The introduction of SQUIDs also allows for in situ tuning of the photonic power transfer which could be utilized in experiments on superconducting quantum bits. △ Less

Submitted 21 May, 2012; originally announced May 2012.

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

Authors: Laurens H. Willems Van Beveren, Kuan Y. Tan, Nai-Shyan Lai, Oleh Klochan, Andrew S. Dzurak, Alex R. Hamilton

Abstract: A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefo… ▽ More A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)). △ Less

Submitted 6 October, 2011; originally announced October 2011.

Comments: 3 pages

Journal ref: Materials Science Forum Vol. 700, Advanced Materials and Nanotechnology (AMN-5), 2011 conference on, 93-95 (2012)

Single-photon heat conduction in electrical circuits

Authors: P. J. Jones, J. A. M. Huhtamäki, K. Y. Tan, M. Möttönen

Abstract: We study photonic heat conduction between two resistors coupled weakly to a single superconducting microwave cavity. At low enough temperature, the dominating part of the heat exchanged between the resistors is transmitted by single-photon excitations of the fundamental mode of the cavity. This manifestation of single-photon heat conduction should be experimentally observable with the current stat… ▽ More We study photonic heat conduction between two resistors coupled weakly to a single superconducting microwave cavity. At low enough temperature, the dominating part of the heat exchanged between the resistors is transmitted by single-photon excitations of the fundamental mode of the cavity. This manifestation of single-photon heat conduction should be experimentally observable with the current state of the art. Our scheme can possibly be utilized in remote interference-free temperature control of electric components and environment engineering for superconducting qubits coupled to cavities. △ Less

Submitted 14 July, 2011; originally announced July 2011.

Single-electron shuttle based on a silicon quantum dot

Authors: K. W. Chan, M. Mottonen, A. Kemppinen, N. S. Lai, K. Y. Tan, W. H. Lim, A. S. Dzurak

Abstract: We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead… ▽ More We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency f_p. Current plateaus at integer levels of ef_p are observed up to f_p = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage. △ Less

Submitted 5 October, 2011; v1 submitted 30 March, 2011; originally announced March 2011.

Journal ref: Appl. Phys. Lett. 98, 212103 (2011)

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime

Authors: Laurens H. Willems van Beveren, Kuan Y. Tan, Nai-Shyan Lai, Andrew S. Dzurak, Alex R. Hamilton

Abstract: We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduc… ▽ More We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduced peak mobility. We also observe a voltage threshold shift which we attribute to negative oxide charge, injected during electron-beam lithography processing. △ Less

Submitted 16 September, 2010; originally announced September 2010.

Comments: 4 pages, 4 figures, submitted for Applied Physics Letters

Journal ref: Appl. Phys. Lett. 97, 152102 (2010) (3 pages)

Probe and Control of the Reservoir Density of States in Single-Electron Devices

Authors: M. Mottonen, K. Y. Tan, K. W. Chan, F. A. Zwanenburg, W. H. Lim, C. C. Escott, J. -M. Pirkkalainen, A. Morello, C. Yang, J. A. van Donkelaar, A. D. C. Alves, D. N. Jamieson, L. C. L. Hollenberg, A. S. Dzurak

Abstract: We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window i… ▽ More We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures. △ Less

Submitted 5 October, 2009; originally announced October 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 81, 161304 (2010)

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

Authors: Kuan Yen Tan, Kok Wai Chan, Mikko Möttönen, Andrea Morello, Changyi Yang, Jessica van Donkelaar, Andrew Alves, Juha-Matti Pirkkalainen, David N. Jamieson, Robert G. Clark, Andrew S. Dzurak

Abstract: We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin… ▽ More We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures. △ Less

Submitted 2 February, 2010; v1 submitted 27 May, 2009; originally announced May 2009.

Comments: 6 pages, 3 figures, journal

Journal ref: Nano Letters 10, 11 (2010)