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Strain effects on Phase-Filling Singularities in Highly Doped n-Type Ge
Authors:
Zhigang Song,
Wei-Jun Fan,
C. S. Tan,
Qijie Wang,
Donguk Nam,
D. H. Zhang,
Greg Sun
Abstract:
Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped $n$-type Ge and confirmed in experiment the PFS associated $E_{1}+Δ_{1}$ transition by advanced \textit{in situ} doping technology [Phys. Rev. Lett. 118, 267402 (2017)], but the strong overlap between $E_{1}$ and $E_{1}+Δ_{1}$ optical transitions made the PFS associa…
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Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped $n$-type Ge and confirmed in experiment the PFS associated $E_{1}+Δ_{1}$ transition by advanced \textit{in situ} doping technology [Phys. Rev. Lett. 118, 267402 (2017)], but the strong overlap between $E_{1}$ and $E_{1}+Δ_{1}$ optical transitions made the PFS associated $E_{1}$ transition that occurs at the high doping concentration unobservable in their measurement. In this work, we investigate the PFS of the highly doped n-type Ge in the presence of the uniaxial and biaxial tensile strain along [100], [110] and [111] crystal orientation. Compared with the relaxed bulk Ge, the tensile strain along [100] increases the energy separation between the $E_{1}$ and $E_{1}+Δ_{1}$ transition, making it possible to reveal the PFS associated $E_{1}$ transition in optical measurement. Besides, the application of tensile strain along [110] and [111] offers the possibility of lowering the required doping concentration for the PFS to be observed, resulting in new additional features associated with $E_{1}+Δ_{1}$ transition at inequivalent $L$-valleys. These theoretical predications with more distinguishable optical transition features in the presence of the uniaxial and biaxial tensile strain can be more conveniently observed in experiment, providing new insights into the excited states in heavily doped semiconductors.
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Submitted 17 January, 2020;
originally announced January 2020.
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Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model
Authors:
Zhigang Song,
Weijun Fan,
Chuan Seng Tan,
Qijie Wang,
Donguk Nam,
Dao Hua Zhang,
Greg Sun
Abstract:
We extend the previous 30-band $k$$\cdot$$p$ model effectively employed for relaxed Ge$_{1-x}$Sn$_{x}$ alloy to the case of strained Ge$_{1-x}$Sn$_{x}$ alloy. The strain-relevant parameters for the 30-band $k$$\cdot$$p$ model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the depende…
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We extend the previous 30-band $k$$\cdot$$p$ model effectively employed for relaxed Ge$_{1-x}$Sn$_{x}$ alloy to the case of strained Ge$_{1-x}$Sn$_{x}$ alloy. The strain-relevant parameters for the 30-band $k$$\cdot$$p$ model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of band-gap at $L$-valley and $Γ$-valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band $k$$\cdot$$p$ model and relevant input parameters successfully applied to relaxed and strained Ge$_{1-x}$Sn$_{x}$ alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy.
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Submitted 8 August, 2019;
originally announced August 2019.
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Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD
Authors:
Guangnan Zhou,
Alejandra V. Cuervo Covian,
Kwang Hong Lee,
Chuan Seng Tan,
Jifeng Liu,
Guangrui,
Xia
Abstract:
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light e…
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Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light emission properties. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films have a small tensile strain of 0.2%. As-grown P and As-doped Ge films have threading dislocaiton densities from 2.8e8 to 1.1e9 cm^(-2) without defect annealing. With thermal cycling, these values reduced to 1-1.5e8 cm^(-2). The six degree offcut of the Si substrate was shown to have little impact. In contrast to delta doping, the out-diffusion of dopants has been successfully suppressed to retain the doping concentration upon defect annealing. However, the photoluminescence intensity decreases mostly due to Si-Ge interdiffusion, which also causes a blue-shift in the emission wavelength. Compared to a benckmarking sample from the first Ge laser work doped by delta doping method in 2012, the as-grown P or As-doped Ge films have similar photoluminescence intensity at a 25% doping concentration and smoother surface, which are promising for Ge lasers with better light emission efficiencies.
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Submitted 25 February, 2019; v1 submitted 29 January, 2019;
originally announced January 2019.
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Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion
Authors:
Guangnan Zhou,
Kwang Hong Lee,
Dalaver H. Anjum,
Qiang Zhang,
Xixiang Zhang,
Chuan Seng Tan,
Guangrui,
Xia
Abstract:
Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. On the other hand, B doped Ge films have threading dislocations…
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Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. On the other hand, B doped Ge films have threading dislocations above 1 x 10^8 cm-2. While P and As doping can reduce the threading dislocation density to be less than 10^6 cm-2 without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x_Ge range and with the dislocation mediated diffusion term was established. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.
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Submitted 14 December, 2017;
originally announced December 2017.
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Low-threshold optically pumped lasing in highly strained Ge nanowires
Authors:
Shuyu Bao,
Daeik Kim,
Chibuzo Onwukaeme,
Shashank Gupta,
Krishna Saraswat,
Kwang Hong Lee,
Yeji Kim,
Dabin Min,
Yongduck Jung,
Haodong Qiu,
Hong Wang,
Eugene A. Fitzgerald,
Chuan Seng Tan,
Donguk Nam
Abstract:
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavorable bandstructures. Highly strained germanium with its fundamentally altered bandstructure ha…
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The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavorable bandstructures. Highly strained germanium with its fundamentally altered bandstructure has emerged as a potential low-threshold gain medium, but there has yet to be any successful demonstration of lasing from this seemingly promising material system. Here, we demonstrate a low-threshold, compact group IV laser that employs germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium. The amplified material gain in strained germanium can sufficiently surmount optical losses at 83 K, thus allowing the first observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm^-^2. Our demonstration opens up a new horizon of group IV lasers for photonic-integrated circuits.
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Submitted 15 August, 2017;
originally announced August 2017.
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On the Origins of Near-Surface Stresses in Silicon around Cu-filled and CNT-filled Through Silicon Vias
Authors:
Ye Zhu,
Kaushik Ghosh,
Hong Yu Li,
Yiheng Lin,
Chuan Seng Tan,
Guangrui Xia
Abstract:
Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temperatures for Cu-filled and CNT-filled TSV samples. From the observations, we proved that the stresses near TSVs are mainly from two sources: 1) pre-existing stress before via filling, and 2) coefficients of thermal expan…
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Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temperatures for Cu-filled and CNT-filled TSV samples. From the observations, we proved that the stresses near TSVs are mainly from two sources: 1) pre-existing stress before via filling, and 2) coefficients of thermal expansion (CTE) mismatch-induced stress. CTE-mismatch-induced stress is shown to dominate the compressive regime of the near-surface stress distribution around Cu-filled TSV structures, while pre-existing stress dominates the full range of the stress distribution in the CNT-filled TSV structures. Once the pre-existing stress is minimized, the total stress around CNT-filled TSVs can be minimized accordingly. Therefore, compared to Cu-filled TSVs, CNT-filled TSVs hold the potential to circumvent the hassle of stress-aware circuit layout and to solve the stress-related reliability issues.
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Submitted 15 January, 2016;
originally announced January 2016.
