Showing 1–19 of 19 results for author: Talin, A

Self-heating electrochemical memory for high-precision analog computing

Authors: Adam L. Gross, Sangheon Oh, François Léonard, Wyatt Hodges, T. Patrick Xiao, Joshua D. Sugar, Jacklyn Zhu, Sritharini Radhakrishnan, Sangyong Lee, Jolie Wang, Adam Christensen, Sam Lilak, Patrick S. Finnegan, Patrick Crandall, Christopher H. Bennett, William Wahby, Robin Jacobs-Gedrim, Matthew J. Marinella, Suhas Kumar, Sapan Agarwal, Yiyang Li, A. Alec Talin, Elliot J. Fuller

Abstract: Artificial intelligence (AI) is pushing the limits of digital computing to such an extent that, if current trends were to continue, global energy consumption from computation alone would eclipse all other forms of energy within the next two decades. One promising approach to reduce energy consumption and to increase computational speed is in-memory analog computing. However, analog computing neces… ▽ More Artificial intelligence (AI) is pushing the limits of digital computing to such an extent that, if current trends were to continue, global energy consumption from computation alone would eclipse all other forms of energy within the next two decades. One promising approach to reduce energy consumption and to increase computational speed is in-memory analog computing. However, analog computing necessitates a fundamental rethinking of computation at the material level, where information is stored as continuously variable physical observables. This shift introduces challenges related to the precision, dynamic range, and reliability of analog devices - issues that have hindered the development of existing memory technology for use in analog computers. Here, we address these issues in the context of memory which stores information as resistance. Our approach utilizes an electrochemical cell to tune the bulk oxygen-vacancy concentration within a metal oxide film. Through leveraging the gate contact as both a heater and source of electrochemical currents, kinetic barriers are overcome to enable a dynamic range of nine decades of analog tunable resistance, more than 3,000 available states, and programming with voltages less than 2 V. Furthermore, we demonstrate deterministic write operations with high precision, current-voltage linearity across six decades, and programming speeds as fast as 15 ns. These characteristics pave the way toward low-power analog computers with potential to improve AI efficiency by orders of magnitude. △ Less

Submitted 21 May, 2025; originally announced May 2025.

Resolving the Electron Plume within a Scanning Electron Microscope

Authors: Francis M. Alcorn, Christopher Perez, Eric J. Smoll, Lauren Hoang, Frederick Nitta, Andrew J. Mannix, A. Alec Talin, Craig Y. Nakakura, David W. Chandler, Suhas Kumar

Abstract: Scanning electron microscopy (SEM), a century-old technique, is today a ubiquitous method of imaging the surface of nanostructures. However, most SEM detectors simply count the number of secondary electrons from a material of interest, and thereby overlook the rich material information contained within them. Here, by simple modifications to a standard SEM tool, we resolve the momentum and energy i… ▽ More Scanning electron microscopy (SEM), a century-old technique, is today a ubiquitous method of imaging the surface of nanostructures. However, most SEM detectors simply count the number of secondary electrons from a material of interest, and thereby overlook the rich material information contained within them. Here, by simple modifications to a standard SEM tool, we resolve the momentum and energy information of secondary electrons by directly imaging the electron plume generated by the electron beam of the SEM. Leveraging these spectroscopic imaging capabilities, our technique is able to image lateral electric fields across a prototypical silicon p-n junctions and to distinguish differently doped regions, even when buried beyond depths typically accessible by SEM. Intriguingly, the sub-surface sensitivity of this technique reveals unexpectedly strong surface band bending within nominally passivated semiconductor structures, providing useful insights for complex layered component designs, in which interfacial dynamics dictate device operation. These capabilities for non-invasive, multi-modal probing of complicated electronic components are crucial in today's electronic manufacturing but is largely inaccessible even with sophisticated techniques. These results show that seemingly simple SEM can be extended to probe complex and useful material properties. △ Less

Submitted 10 January, 2025; originally announced January 2025.

Comments: Main text: 16 pages, 5 figure. Supporting information: 18 pages, 14 figures

Journal ref: ACS Nano 2024, 18, 49, 33479-33490

Nanoscale and Element-Specific Lattice Temperature Measurements using Core-Loss Electron Energy-Loss Spectroscopy

Authors: Levi D. Palmer, Wonseok Lee, Daniel B. Durham, Javier Fajardo, Jr., Yuzi Liu, A. Alec Talin, Thomas E. Gage, Scott K. Cushing

Abstract: Measuring nanoscale local temperatures, particularly in vertically integrated and multi-component systems, remains challenging. Spectroscopic techniques like X-ray absorption and core-loss electron energy-loss spectroscopy (EELS) are sensitive to lattice temperature, but understanding thermal effects is nontrivial. This work explores the potential for nanoscale and element-specific core-loss therm… ▽ More Measuring nanoscale local temperatures, particularly in vertically integrated and multi-component systems, remains challenging. Spectroscopic techniques like X-ray absorption and core-loss electron energy-loss spectroscopy (EELS) are sensitive to lattice temperature, but understanding thermal effects is nontrivial. This work explores the potential for nanoscale and element-specific core-loss thermometry by comparing the Si L2,3 edge's temperature-dependent redshift against plasmon energy expansion thermometry (PEET) in a scanning TEM. Using density functional theory (DFT), time-dependent DFT, and the Bethe-Salpeter equation, we ab initio model both the Si L2,3 and plasmon redshift. We find that the core-loss redshift occurs due to bandgap reduction from electron-phonon renormalization. Our results indicate that despite lower core-loss signal intensity compared to plasmon features, core-loss thermometry has key advantages and can be more accurate through standard spectral denoising. Specifically, we show that the Varshni equation easily interprets the core-loss redshift for semiconductors, which avoids plasmon spectral convolution for PEET in complex junctions and interfaces. We also find that core-loss thermometry is more accurate than PEET at modeling thermal lattice expansion in semiconductors, unless the specimen's temperature-dependent dielectric properties are fully characterized. Furthermore, core-loss thermometry has the potential to measure nanoscale heating in multi-component materials and stacked interfaces with elemental specificity at length scales smaller than the plasmon's wavefunction. △ Less

Submitted 28 May, 2025; v1 submitted 1 November, 2024; originally announced November 2024.

Comments: 40 pages, 5 main text figures, 1 table

Nonvolatile Electrochemical Memory at 600C Enabled by Composition Phase Separation

Authors: Jingxian Li, Andrew J. Jalbert, Leah S. Simakas, Noah J. Geisler, Virgil J. Watkins, Laszlo A. Cline, Elliot J. Fuller, A. Alec Talin, Yiyang Li

Abstract: CMOS-based microelectronics are limited to ~150°C and therefore not suitable for the extreme high temperatures in aerospace, energy, and space applications. While wide bandgap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and… ▽ More CMOS-based microelectronics are limited to ~150°C and therefore not suitable for the extreme high temperatures in aerospace, energy, and space applications. While wide bandgap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600 °C. Through correlative electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells. △ Less

Submitted 21 October, 2024; originally announced October 2024.

Comments: 19 pages, 4 figures

Journal ref: Device 2025

Tunable intervalence charge transfer in ruthenium Prussian blue analogue enables stable and efficient biocompatible artificial synapses

Authors: Donald A. Robinson, Michael E. Foster, Christopher H. Bennett, Austin Bhandarkar, Elizabeth R. Webster, Aleyna Celebi, Nisa Celebi, Elliot J. Fuller, Vitalie Stavila, Catalin D. Spataru, David S. Ashby, Matthew J. Marinella, Raga Krishnakumar, Mark D. Allendorf, A. Alec Talin

Abstract: Emerging concepts for neuromorphic computing, bioelectronics, and brain-computer interfacing inspire new research avenues aimed at understanding the relationship between oxidation state and conductivity in unexplored materials. Here, we present ruthenium Prussian blue analogue (RuPBA), a mixed valence coordination compound with an open framework structure and ability to conduct both ionic and elec… ▽ More Emerging concepts for neuromorphic computing, bioelectronics, and brain-computer interfacing inspire new research avenues aimed at understanding the relationship between oxidation state and conductivity in unexplored materials. Here, we present ruthenium Prussian blue analogue (RuPBA), a mixed valence coordination compound with an open framework structure and ability to conduct both ionic and electronic charge, for flexible artificial synapses that reversibly switch conductance by more than four orders of magnitude based on electrochemically tunable oxidation state. Retention of programmed states is improved by nearly two orders of magnitude compared to the extensively studied organic polymers, thus reducing the frequency, complexity and energy costs associated with error correction schemes. We demonstrate dopamine detection using RuPBA synapses and biocompatibility with neuronal cells, evoking prospective application for brain-computer interfacing. By application of electron transfer theory to in-situ spectroscopic probing of intervalence charge transfer, we elucidate a switching mechanism whereby the degree of mixed valency between N-coordinated Ru sites controls the carrier concentration and mobility, as supported by DFT. △ Less

Submitted 15 July, 2022; originally announced July 2022.

Electrochemical Modeling of GITT Measurements for Improved Solid-State Diffusion Coefficient Evaluation

Authors: Jeffrey S. Horner, Grace Whang, David S. Ashby, Igor V. Kolesnichenko, Timothy N. Lambert, Bruce S. Dunn, A. Alec Talin, Scott A. Roberts

Abstract: Galvanostatic Intermittent Titration Technique (GITT) is widely used to evaluate solid-state diffusion coefficients in electrochemical systems. However, the existing analysis methods for GITT data require numerous assumptions, and the derived diffusion coefficients typically are not independently validated. To investigate the validity of the assumptions and derived diffusion coefficients, we emplo… ▽ More Galvanostatic Intermittent Titration Technique (GITT) is widely used to evaluate solid-state diffusion coefficients in electrochemical systems. However, the existing analysis methods for GITT data require numerous assumptions, and the derived diffusion coefficients typically are not independently validated. To investigate the validity of the assumptions and derived diffusion coefficients, we employ a direct pulse fitting method for interpreting GITT data that involves numerically fitting an electrochemical pulse and subsequent relaxation to a one-dimensional, single-particle, electrochemical model coupled with non-ideal transport to directly evaluate diffusion coefficients that are independently verified through cycling predictions. Extracted from GITT measurements of the intercalation regime of FeS2 and used to predict the discharge behavior, our non-ideal diffusion coefficients prove to be two orders of magnitude more accurate than ideal diffusion coefficients extracted using conventional methods. We further extend our model to a polydisperse set of particles to show the validity of a single-particle approach when the modeled radius is proportional to the total volume-to-surface-area ratio of the system. △ Less

Submitted 22 October, 2021; v1 submitted 13 July, 2021; originally announced July 2021.

Journal ref: ACS Appl. Energy Mater. 2021

A multi-technique approach to understanding delithiation damage in LiCoO2 thin films

Authors: E. Salagre, S. Quilez, R. de Benito, M. Jaafar, H. P. van der Meulen, E. Vasco, R. Cid, E. J. Fuller, A. A. Talin, P. Segovia, E. G. Michel, C. Polop

Abstract: We report on the delithiation of LiCoO2 thin films using oxalic acid (C2H2O4) with the goal of understanding the structural degradation of an insertion oxide associated with Li chemical extraction. Using a multi-technique approach that includes synchrotron radiation x-ray diffraction, scanning electron microscopy, micro Raman spectroscopy, photoelectron spectroscopy and conductive atomic force mic… ▽ More We report on the delithiation of LiCoO2 thin films using oxalic acid (C2H2O4) with the goal of understanding the structural degradation of an insertion oxide associated with Li chemical extraction. Using a multi-technique approach that includes synchrotron radiation x-ray diffraction, scanning electron microscopy, micro Raman spectroscopy, photoelectron spectroscopy and conductive atomic force microscopy we reveal the balance between selective Li extraction and structural damage. We identify three different delithiation regimes, related to surface processes, bulk delithiation and damage generation. We find that only a fraction of the grains is affected by the delithiation process, which may create local inhomogeneities. The chemical route to Li extraction provides additional opportunities to investigate delithiation while avoiding the complications associated with electrolyte breakdown and could simplify in situ measurements. △ Less

Submitted 23 February, 2021; v1 submitted 27 October, 2020; originally announced October 2020.

Kinetics-Controlled Degradation Reactions at Crystalline LiPON/Li(x)CoO(2) and Crystalline LiPON/Li-metal Interfaces

Authors: Kevin Leung, Alexander J. Pearse, A. Alec Talin, Elliot J. Fuller, Gary W. Rubloff, Normand A. Modine

Abstract: Detailed understanding of solid-solid interface structure-function relations is critical for the improvement and wide deployment of all solid-state batteries. The interfaces between lithium phosphorous oxynitride ("LiPON") solid electrolyte material and lithium metal anode, between LiPON and Li(x)CoO(2) cathode surfaces, have been reported to generate solid electrolyte interphase ("SEI")-like prod… ▽ More Detailed understanding of solid-solid interface structure-function relations is critical for the improvement and wide deployment of all solid-state batteries. The interfaces between lithium phosphorous oxynitride ("LiPON") solid electrolyte material and lithium metal anode, between LiPON and Li(x)CoO(2) cathode surfaces, have been reported to generate solid electrolyte interphase ("SEI")-like products and/or disordered regions. Using electronic structure calculations and crystalline LiPON models with atomic-layer-deposition-like stoichiometry, we predict LiPON models with purely P-N-P backbones are kinetically inert towards lithium at room temperature. In contrast, transfer of oxygen atoms from low-energy Li(x)CoO(2) (104) surfaces to LiPON is much faster under ambient conditions. The mechanisms of the primary reaction steps, LiPON motifs that readily react with lithium metal, experimental results on amorphous LiPON to partially corroborate these predictions, and possible mitigation strategies to reduce degradations are discussed. LiPON interfaces are found to be useful case studies for highlighting the importance of kinetics-controlled processes during battery assembly at moderate processing temperatures. △ Less

Submitted 23 June, 2018; originally announced June 2018.

Comments: 35 pages, 9 figures

Journal ref: ChemSusChem 2018, 11, 1956-1969

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5

Authors: François Léonard, Wenlong Yu, Kimberlee C. Collins, Douglas L. Medlin, Joshua D. Sugar, A. Alec Talin, Wei Pan

Abstract: The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe5 has been shown to be a Dirac semimetal possessing unique topological electronic and optical properties. Here we present spatially-resolved photocurrent measurements on devices made of nanoplatelets of ZrTe5, demonstrating the photothermoelectri… ▽ More The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe5 has been shown to be a Dirac semimetal possessing unique topological electronic and optical properties. Here we present spatially-resolved photocurrent measurements on devices made of nanoplatelets of ZrTe5, demonstrating the photothermoelectric origin of the photoresponse. Due to the high electrical conductivity and good Seebeck coefficient, we obtain noise-equivalent powers as low as 42 pW/Hz1/2 at room temperature for visible light illumination at zero bias. We also show that these devices suffer from significant ambient reactivity such as the formation of a Te-rich surface region driven by Zr oxidation, as well as severe reactions with the metal contacts. This reactivity results in significant stresses in the devices, leading to unusual geometries that are useful for gaining insight into the photocurrent mechanisms. Our results indicate that both the large photothermoelectric response and reactivity must be considered when designing or interpreting photocurrent measurements in these systems. △ Less

Submitted 23 October, 2017; originally announced October 2017.

Fabrication of high quality GaN nanopillar arrays by dry and wet chemical etching

Authors: Dipak Paramanik, Abhishek Motayed, Matthew King, Jong-Yoon Ha, Sergi Kryluk, Albert V. Davydov, Alec Talin

Abstract: We study strain relaxation and surface damage of GaN nanopillar arrays fabricated using inductively coupled plasma (ICP) etching and post etch wet chemical treatment. We controlled the shape and surface damage of such nanopillar structures through selection of etching parameters. We compared different substrate temperatures and different chlorine-based etch chemistries to fabricate high quality Ga… ▽ More We study strain relaxation and surface damage of GaN nanopillar arrays fabricated using inductively coupled plasma (ICP) etching and post etch wet chemical treatment. We controlled the shape and surface damage of such nanopillar structures through selection of etching parameters. We compared different substrate temperatures and different chlorine-based etch chemistries to fabricate high quality GaN nanopillars. Room temperature photoluminescence and Raman scattering measurements were carried to study the presence of surface defect and strain relaxation on these nanostructures, respectively. We found that wet KOH etching can remove the side wall damages caused by dry plasma etching, leading to better quality of GaN nanopillars arrays. The Si material underneath the GaN pillars was removed by KOH wet etching, leaving behind a fine Si pillar to support the GaN structure. Substantial strain relaxations were observed in these structures from room temperature Raman spectroscopy measurements. Room temperature Photoluminescence spectroscopy shows the presence of whispering gallery modes from these the nano disks structures. △ Less

Submitted 5 April, 2014; v1 submitted 1 November, 2013; originally announced November 2013.

Comments: 20 pages, 5 figures

Local Measurements of the Superconducting Pairing Symmetry in CuxBi2Se3

Authors: Niv Levy, Tong Zhang, Jeonghoon Ha, Fred Sharifi, A. Alec Talin, Young Kuk, Joseph A. Stroscio

Abstract: Topological superconductors represent a newly predicted phase of matter that is topologically distinct from conventional superconducting condensates of Cooper pairs. As a manifestation of their topological character, topological superconductors support solid-state realizations of Majorana fermions at their boundaries. The recently discovered superconductor CuxBi2Se3 has been theoretically proposed… ▽ More Topological superconductors represent a newly predicted phase of matter that is topologically distinct from conventional superconducting condensates of Cooper pairs. As a manifestation of their topological character, topological superconductors support solid-state realizations of Majorana fermions at their boundaries. The recently discovered superconductor CuxBi2Se3 has been theoretically proposed as an odd-parity superconductor in the time-reversal-invariant topological superconductor class and point-contact spectroscopy measurements have reported the observation of zero-bias conductance peaks corresponding to Majorana states in this material. Here we report scanning tunneling spectroscopy (STS) measurements of the superconducting energy gap in CuxBi2Se3 as a function of spatial position and applied magnetic field. The tunneling spectrum shows that the density of states at the Fermi level is fully gapped without any in-gap states. The spectrum is well described by the Bardeen-Cooper-Schrieffer (BCS) theory with a momentum independent order parameter, which suggests that Cu0.2Bi2Se3 is a classical s-wave superconductor contrary to previous expectations and measurements. △ Less

Submitted 1 November, 2012; originally announced November 2012.

Journal ref: Physical Review Letters 110, 117001 (2013)

Efficient terahertz emission from InAs nanowires

Authors: Denis V. Seletskiy, Michael P. Hasselbeck, Jeffrey G. Cederberg, Aaron Katzenmeyer, Maria E. Toimil-Molares, François Léonard, A. Alec Talin, Mansoor Sheik-Bahae

Abstract: We observe intense pulses of far-infrared electromagnetic radiation emitted from arrays of InAs nanowires. The THz radiation power efficiency of these structures is about 15 times higher compared to a planar InAs substrate. This is explained by the preferential orientation of coherent plasma motion to the wire surface, which overcomes radiation trapping by total-internal reflection. We present evi… ▽ More We observe intense pulses of far-infrared electromagnetic radiation emitted from arrays of InAs nanowires. The THz radiation power efficiency of these structures is about 15 times higher compared to a planar InAs substrate. This is explained by the preferential orientation of coherent plasma motion to the wire surface, which overcomes radiation trapping by total-internal reflection. We present evidence that this radiation originates from a low-energy acoustic surface plasmon mode of the nanowire. This is supported by independent measurements of electronic transport on individual nanowires, ultrafast THz spectroscopy and theoretical analysis. Our combined experiments and analysis further indicate that these plasmon modes are specific to high aspect ratio geometries. △ Less

Submitted 2 September, 2011; originally announced September 2011.

Comments: 12 pages, 7 figures

Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires

Authors: Aaron M. Katzenmeyer, François Léonard, A. Alec Talin, Ping-Show Wong, Diana L. Huffaker

Abstract: We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them inordinately resistive. By measuring sufficiently high aspect-ratio nanowires individually in situ, we decouple the role of the contacts and show that this sem… ▽ More We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them inordinately resistive. By measuring sufficiently high aspect-ratio nanowires individually in situ, we decouple the role of the contacts and show that this semi-insulating electrical behavior is the result of trap-mediated carrier transport. We observe Poole-Frenkel transport that crosses over to phonon-assisted tunneling at higher fields, with a tunneling time found to depend predominantly on fundamental physical constants as predicted by theory. By using in situ electron beam irradiation of individual nanowires we probe the nanowire electronic transport when free carriers are made available, thus revealing the nature of the contacts. △ Less

Submitted 28 October, 2010; originally announced October 2010.

Observation of Space-Charge-Limited Transport in InAs Nanowires

Authors: Aaron M. Katzenmeyer, François Léonard, A. Alec Talin, M. Eugenia Toimil-Molares, Jeffrey G. Cederberg, Jianyu Huang, Jessica L. Lensch-Falk

Abstract: Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying theory to determine the mobility and effective carrier concentration of individual nanowires, both of which are found to be diameter-dependent. Intentionally induce… ▽ More Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying theory to determine the mobility and effective carrier concentration of individual nanowires, both of which are found to be diameter-dependent. Intentionally induced failure by Joule heating supports the notion of space-charge-limited transport and proposes reduced thermal conductivity due to the nanowires polymorphism. △ Less

Submitted 9 October, 2010; originally announced October 2010.

How metal films de-wet substrates - identifying the kinetic pathways and energetic driving forces

Authors: Kevin F. McCarty, John C. Hamilton, Yu Sato, Angela Saa, Roland Stumpf, Juan de la Figuera, Konrad Thurmer, Frank Jones, Andreas K. Schmid, A. Alec Talin, Norman C. Bartelt

Abstract: We study how single-crystal chromium films of uniform thickness on W(110) substrates are converted to arrays of three-dimensional (3D) Cr islands during annealing. We use low-energy electron microscopy (LEEM) to directly observe a kinetic pathway that produces trenches that expose the wetting layer. Adjacent film steps move simultaneously uphill and downhill relative to the staircase of atomic s… ▽ More We study how single-crystal chromium films of uniform thickness on W(110) substrates are converted to arrays of three-dimensional (3D) Cr islands during annealing. We use low-energy electron microscopy (LEEM) to directly observe a kinetic pathway that produces trenches that expose the wetting layer. Adjacent film steps move simultaneously uphill and downhill relative to the staircase of atomic steps on the substrate. This step motion thickens the film regions where steps advance. Where film steps retract, the film thins, eventually exposing the stable wetting layer. Since our analysis shows that thick Cr films have a lattice constant close to bulk Cr, we propose that surface and interface stress provide a possible driving force for the observed morphological instability. Atomistic simulations and analytic elastic models show that surface and interface stress can cause a dependence of film energy on thickness that leads to an instability to simultaneous thinning and thickening. We observe that de-wetting is also initiated at bunches of substrate steps in two other systems, Ag/W(110) and Ag/Ru(0001). We additionally describe how Cr films are converted into patterns of unidirectional stripes as the trenches that expose the wetting layer lengthen along the W[001] direction. Finally, we observe how 3D Cr islands form directly during film growth at elevated temperature. The Cr mesas (wedges) form as Cr film steps advance down the staircase of substrate steps, another example of the critical role that substrate steps play in 3D island formation. △ Less

Submitted 6 April, 2009; originally announced April 2009.

Journal ref: New Journal of Physics 11 (2009) 043001

Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes

Authors: François Léonard, A. Alec Talin, B. S. Swartzentruber, S. T. Picraux

Abstract: We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a d… ▽ More We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a diameter dependence of both the depletion width and the electron-hole recombination time. The recombination time is dominated by surface contributions and depends linearly on the nanowire diameter. △ Less

Submitted 6 March, 2009; originally announced March 2009.

Comments: To appear in Physical Review Letters

Unusually strong space-charge-limited current in thin wires

Authors: A. Alec Talin, François Léonard, B. S. Swartzentruber, Xin Wang, Stephen D. Hersee

Abstract: The current-voltage characteristics of thin wires are often observed to be nonlinear, and this behavior has been ascribed to Schottky barriers at the contacts. We present electronic transport measurements on GaN nanorods and demonstrate that the nonlinear behavior originates instead from space-charge-limited current. A theory of space-charge-limited current in thin wires corroborates the experim… ▽ More The current-voltage characteristics of thin wires are often observed to be nonlinear, and this behavior has been ascribed to Schottky barriers at the contacts. We present electronic transport measurements on GaN nanorods and demonstrate that the nonlinear behavior originates instead from space-charge-limited current. A theory of space-charge-limited current in thin wires corroborates the experiments, and shows that poor screening in high aspect ratio materials leads to a dramatic enhancement of space-charge limited current, resulting in new scaling in terms of the aspect ratio. △ Less

Submitted 13 August, 2008; originally announced August 2008.

Comments: 4 pages, 3 figures, to appear in Physical Review Letters

Size-dependent effects on electrical contacts to nanotubes and nanowires

Authors: F. Leonard, A. A. Talin

Abstract: Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one dimensional (Q1D) structures such as nanotubes and nanowires, side contact with the metal only leads to weak band realignment, in contrast with bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However… ▽ More Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one dimensional (Q1D) structures such as nanotubes and nanowires, side contact with the metal only leads to weak band realignment, in contrast with bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However, the conventional strategy of heavily doping the semiconductor to obtain Ohmic contacts breaks down as the nanowire diameter is reduced. The issue of Fermi level pinning is also discussed, and it is demonstrated that the unique density of states of Q1D structures makes them less sensitive to this effect. Our results agree with recent experimental work, and should apply to a broad range of Q1D materials. △ Less

Submitted 18 July, 2006; originally announced July 2006.

Comments: Physical Review Letters 97, 026804 (2006)

Electrical contacts to nanotubes and nanowires: why size matters

Authors: Francois Leonard, A. Alec Talin

Abstract: Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one-dimensional structures such as nanotubes and nanowires, side contact with the metal only leads to weak band re-alignement, in contrast to bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However, the… ▽ More Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one-dimensional structures such as nanotubes and nanowires, side contact with the metal only leads to weak band re-alignement, in contrast to bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However, the conventional strategy of heavily doping the semiconductor to obtain ohmic contacts breaks down as the nanowire diameter is reduced. The issue of Fermi level pinning is also discussed, and it is demonstrated that the unique density of states of quasi-one-dimensional structures makes them less sensitive to this effect. Our results agree with recent experimental work, and should apply to a broad range of quasi-one-dimensional materials. △ Less

Submitted 31 January, 2006; originally announced February 2006.