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Thickness-dependent magnetic properties and strain-induced orbital magnetic moment in SrRuO3 thin films
Authors:
K. Ishigami,
K. Yoshimatsu,
D. Toyota,
M. Takizawa,
T. Yoshida,
G. Shibata,
T. Harano,
Y. Takahashi,
T. Kadono,
V. K. Verma,
V. R. Singh,
Y. Takeda,
T. Okane,
Y. Saitoh,
H. Yamagami,
T. Koide,
M. Oshima,
H. Kumigashira,
A. Fujimori
Abstract:
Thin films of the ferromagnetic metal SrRuO3 (SRO) show a varying easy magnetization axis depending on the epitaxial strain and undergo a metal-to-insulator transition with decreasing film thickness. We have investigated the magnetic properties of SRO thin films with varying thicknesses fabricated on SrTiO3(001) substrates by soft x-ray magnetic circular dichroism (XMCD) at the Ru M2,3 edge. Resul…
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Thin films of the ferromagnetic metal SrRuO3 (SRO) show a varying easy magnetization axis depending on the epitaxial strain and undergo a metal-to-insulator transition with decreasing film thickness. We have investigated the magnetic properties of SRO thin films with varying thicknesses fabricated on SrTiO3(001) substrates by soft x-ray magnetic circular dichroism (XMCD) at the Ru M2,3 edge. Results have shown that, with decreasing film thickness, the film changes from ferromagnetic to non-magnetic around 3monolayer thickness, consistent with previous magnetization and magneto-optical Kerr effect measurements. The orbital magnetic moment perpendicular to the film was found to be ~ 0.1μB/Ru atom, and remained nearly unchanged with decreasing film thickness while the spin magnetic moment decreases. Mechanism for the formation of the orbital magnetic moment is discussed based on the electronic structure of the compressively strained SRO film.
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Submitted 4 July, 2015; v1 submitted 21 May, 2015;
originally announced May 2015.
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Self-Energy Effects on the Low- to High-Energy Electronic Structure of SrVO3
Authors:
S. Aizaki,
T. Yoshida,
K. Yoshimatsu,
M. Takizawa,
M. Minohara,
S. Ideta,
A. Fujimori,
K. Gupta,
P. Mahadevan,
K. Horiba,
H. Kumigashira,
M. Oshima
Abstract:
The correlated electronic structure of SrVO3 has been investigated by angle-resolved photoemission spectroscopy using in-situ prepared thin films. Pronounced features of band renormalization have been observed: a sharp kink ~60 meV below the Fermi level (EF) and a broad so-called "high-energy kink" ~0.3 eV below EF as in the high-Tc cuprates although SrVO3 does not show magnetic fluctuations. We h…
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The correlated electronic structure of SrVO3 has been investigated by angle-resolved photoemission spectroscopy using in-situ prepared thin films. Pronounced features of band renormalization have been observed: a sharp kink ~60 meV below the Fermi level (EF) and a broad so-called "high-energy kink" ~0.3 eV below EF as in the high-Tc cuprates although SrVO3 does not show magnetic fluctuations. We have deduced the self-energy in a wide energy range by applying the Kramers-Kronig relation to the observed spectra. The obtained self-energy clearly shows a large energy scale of ~0.7 eV which is attributed to electron-electron interaction and gives rise to the ~0.3 eV "kink" in the band dispersion as well as the incoherent peak ~1.5eV below EF. The present analysis enables us to obtain consistent picture both for the incoherent spectra and the band renormalization.
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Submitted 21 January, 2012;
originally announced January 2012.
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Electronic charges and electric potential at LaAlO3/SrTiO3 interfaces studied by core-level photoemission spectroscopy
Authors:
M. Takizawa,
S. Tsuda,
T. Susaki,
H. Y. Hwang,
A. Fujimori
Abstract:
We studied LaAlO3/SrTiO3 interfaces for varying LaAlO3 thickness by core-level photoemission spectroscopy. In Ti 2p spectra for conducting "n-type" interfaces, Ti3+ signals appeared, which were absent for insulating "p-type" interfaces. The Ti3+ signals increased with LaAlO3 thickness, but started well below the critical thickness of 4 unit cells for metallic transport. Core-level shifts with LaAl…
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We studied LaAlO3/SrTiO3 interfaces for varying LaAlO3 thickness by core-level photoemission spectroscopy. In Ti 2p spectra for conducting "n-type" interfaces, Ti3+ signals appeared, which were absent for insulating "p-type" interfaces. The Ti3+ signals increased with LaAlO3 thickness, but started well below the critical thickness of 4 unit cells for metallic transport. Core-level shifts with LaAlO3 thickness were much smaller than predicted by the polar catastrophe model. We attribute these observations to surface defects/adsorbates providing charges to the interface even below the critical thickness.
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Submitted 18 June, 2011;
originally announced June 2011.
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Chemical potential jump between hole- and electron-doped sides of ambipolar high-Tc cuprate
Authors:
M. Ikeda,
M. Takizawa,
T. Yoshida,
A. Fujimori,
Kouji Segawa,
Yoichi Ando
Abstract:
In order to study an intrinsic chemical potential jump between the hole- and electron-doped high-Tc superconductors, we have performed core-level X-ray photoemission spectroscopy (XPS) measurements of Y0.38La0.62Ba1.74La0.26Cu3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La_2-xSrxCuO4 and…
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In order to study an intrinsic chemical potential jump between the hole- and electron-doped high-Tc superconductors, we have performed core-level X-ray photoemission spectroscopy (XPS) measurements of Y0.38La0.62Ba1.74La0.26Cu3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La_2-xSrxCuO4 and the electron-doped system Nd_2-xCexCuO4, we have estimated the true chemical potential jump between the hole- and electron-doped YLBLCO to be ~0.8 eV, which is much smaller than the optical gaps of 1.4-1.7 eV reported for the parent insulating compounds. We attribute the reduced jump to the indirect nature of the charge-excitation gap as well as to the polaronic nature of the doped carriers.
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Submitted 31 December, 2009;
originally announced January 2010.
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Systematic tight-binding analysis of ARPES spectra of transition-metal oxides
Authors:
H. Wadati,
A. Chikamatsu,
M. Takizawa,
H. Kumigashira,
T. Yoshida,
T. Mizokawa,
A. Fujimori,
M. Oshima,
N. Hamada
Abstract:
We have performed systematic tight-binding (TB) analyses of the angle-resolved photoemission spectroscopy (ARPES) spectra of transition-metal (TM) oxides A$M$O$_3$ ($M=$ Ti, V, Mn, and Fe) with the perovskite-type structure and compared the obtained parameters with those obtained from configuration-interaction (CI) cluster-model analyses of photoemission spectra. The values of $ε_d-ε_p$ from ARP…
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We have performed systematic tight-binding (TB) analyses of the angle-resolved photoemission spectroscopy (ARPES) spectra of transition-metal (TM) oxides A$M$O$_3$ ($M=$ Ti, V, Mn, and Fe) with the perovskite-type structure and compared the obtained parameters with those obtained from configuration-interaction (CI) cluster-model analyses of photoemission spectra. The values of $ε_d-ε_p$ from ARPES are found to be similar to the charge-transfer energy $Δ$ from O $2p$ orbitals to empty TM 3d orbitals and much larger than $Δ-U/2$ ($U$: on-site Coulomb energy) expected for Mott-Hubbard-type compounds including SrVO$_3$. $ε_d-ε_p$ values from {\it ab initio} band-structure calculations show similar behaviors to those from ARPES. The values of the $p-d$ transfer integrals to describe the global electronic structure are found to be similar in all the estimates, whereas additional narrowing beyond the TB description occurs in the ARPES spectra of the $d$ band.
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Submitted 27 October, 2008;
originally announced October 2008.
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Chemical potential landscape in band filling and bandwidth-control of manganites: Photoemission spectroscopy measurements
Authors:
K. Ebata,
M. Takizawa,
A. Fujimori,
H. Kuwahara,
Y. Tomioka,
Y. Tokura
Abstract:
We have studied the effects of band filling and bandwidth control on the chemical potential in perovskite manganites $R_{1-x}A_x$MnO$_3$ ($R$ : rare earth, $A$ : alkaline earth) by measurements of core-level photoemission spectra. A suppression of the doping-dependent chemical potential shift was observed in and around the CE-type charge-ordered composition range, indicating that there is charge…
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We have studied the effects of band filling and bandwidth control on the chemical potential in perovskite manganites $R_{1-x}A_x$MnO$_3$ ($R$ : rare earth, $A$ : alkaline earth) by measurements of core-level photoemission spectra. A suppression of the doping-dependent chemical potential shift was observed in and around the CE-type charge-ordered composition range, indicating that there is charge self-organization such as stripe formation or its fluctuations. As a function of bandwidth, we observed a downward chemical potential shift with increasing bandwidth due to the reduction of the orthorhombic distortion. After subtracting the latter contribution, we found an upward chemical potential shift in the ferromagnetic metallic region $0.3<x<0.5$, which we attribute to the enhancement of double-exchange interaction involving the Jahn-Teller-split $e_g$ band.
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Submitted 31 July, 2008;
originally announced July 2008.
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Bulk-like d band of SrVO3 under a self-protective cap layer
Authors:
M. Takizawa,
M. Minohara,
H. Kumigashira,
D. Toyota,
M. Oshima,
H. Wadati,
T. Yoshida,
A. Fujimori,
M. Lippmaa,
M. Kawasaki,
H. Koinuma,
G. Sordi,
M. Rozenberg
Abstract:
We have performed a detailed angel-resolved photoemission spectroscopy study of in-situ prepared SrVO3 thin films. Naturally capped by a ``transparent'' protective layer, contributions from surface states centered at ~ -1.5 eV are dramatically reduced, enabling us to study the bulk V 3d states. We have observed a clear band dispersion not only in the coherent quasiparticle part but also in the i…
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We have performed a detailed angel-resolved photoemission spectroscopy study of in-situ prepared SrVO3 thin films. Naturally capped by a ``transparent'' protective layer, contributions from surface states centered at ~ -1.5 eV are dramatically reduced, enabling us to study the bulk V 3d states. We have observed a clear band dispersion not only in the coherent quasiparticle part but also in the incoherent part, which are reproduced by dynamical mean-field theory calculations and the spectral weight of the incoherent part is stronger within the Fermi surface.
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Submitted 13 June, 2008;
originally announced June 2008.
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Remote hole-doping of Mott insulators on the nanometer scale
Authors:
M. Takizawa,
Y. Hotta,
T. Susaki,
Y. Ishida,
H. Wadati,
Y. Takata,
K. Horiba,
M. Matsunami,
S. Shin,
M. Yabashi,
K. Tamasaku,
N. Nishino,
T. Ishikawa,
A. Fujimori,
H. Y. Hwang
Abstract:
At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bu…
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At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bulk value of V3+ to higher oxidation states with decreasing LaAlO3 cap layer thickness. These results provide a synthetic approach to hole-doping transition metal oxide heterointerfaces without invoking a polar discontinuity.
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Submitted 13 June, 2008;
originally announced June 2008.
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Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy
Authors:
G. S. Song,
M. Kobayashi,
J. I. Hwang,
T. Kataoka,
M. Takizawa,
A. Fujimori,
T. Ohkouchi,
Y. Takeda,
T. Okane,
Y. Saitoh,
H. Yamagami,
F. -H. Chang,
L. Lee,
H. -J. Lin,
D. J. Huang,
C. T. Chen,
S. Kimura,
M. Funakoshi,
S. Hasegawa,
H. Asahi
Abstract:
The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si…
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The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr$^{2+}$ species caused by the electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.
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Submitted 21 May, 2008;
originally announced May 2008.
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Soft X-ray Absorption and Photoemission Studies of Ferromagnetic Mn-Implanted 3$C$-SiC
Authors:
Gyong Sok Song,
Takashi Kataoka,
Masaki Kobayashi,
Jong Il Hwang,
Masaru Takizawa,
Atsushi Fujimori,
Takuo Ohkochi,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Hiroshi Yamagami,
Fumiyoshi Takano,
Hiro Akinaga
Abstract:
We have performed x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS), and resonant photoemission spectroscopy (RPES) measurements of Mn-implanted 3$C$-SiC (3$C$-SiC:Mn) and carbon-incorporated Mn$_{5}$Si$_{2}$ (Mn$_{5}$Si$_{2}$:C). The Mn 2$p$ core-level XPS and XAS spectra of 3$C$-SiC:Mn and Mn$_{5}$Si$_{2}$:C were similar to each other and showed "intermediate" behavio…
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We have performed x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS), and resonant photoemission spectroscopy (RPES) measurements of Mn-implanted 3$C$-SiC (3$C$-SiC:Mn) and carbon-incorporated Mn$_{5}$Si$_{2}$ (Mn$_{5}$Si$_{2}$:C). The Mn 2$p$ core-level XPS and XAS spectra of 3$C$-SiC:Mn and Mn$_{5}$Si$_{2}$:C were similar to each other and showed "intermediate" behaviors between the localized and itinerant Mn 3$d$ states.
The intensity at the Fermi level was found to be suppressed in 3$C$-SiC:Mn compared with Mn$_{5}$Si$_{2}$:C. These observations are consistent with the formation of Mn$_{5}$Si$_{2}$:C clusters in the 3$C$-SiC host, as observed in a recent transmission electron microscopy study.
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Submitted 5 April, 2008; v1 submitted 14 March, 2008;
originally announced March 2008.
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Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In$_{2-x}$V$_x$O$_3$
Authors:
M. Kobayashi,
Y. Ishida,
J. I. Hwang,
G. S. Song,
M. Takizawa,
A. Fujimori,
Y. Takeda,
T. Ohkochi,
T. Okane,
Y. Saitoh,
H. Yamagami,
Amita Gupta,
H. T. Cao,
K. V. Rao
Abstract:
The electronic structure of In$_{2-x}$V$_x$O$_3$ ($x=0.08$) has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The V $2p$ core-level PES and XAS spectra revealed trivalent electronic state of the V ion, consistent with the substitution of the V ion for the In site. The V 3d partial density of states obtained by the resonant PES technique showed…
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The electronic structure of In$_{2-x}$V$_x$O$_3$ ($x=0.08$) has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The V $2p$ core-level PES and XAS spectra revealed trivalent electronic state of the V ion, consistent with the substitution of the V ion for the In site. The V 3d partial density of states obtained by the resonant PES technique showed a sharp peak above the O $2p$ band. While the O $1s$ XAS spectrum of In$_{2-x}$V$_x$O$_3$ was similar to that of In$_2$O$_3$, there were differences in the In $3p$ and 3d XAS spectra between V-doped and pure In$_2$O$_3$. The observations give clear evidence for hybridization between the In conduction band and the V 3d orbitals in In$_{2-x}$V$_x$O$_3$.
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Submitted 28 January, 2008;
originally announced January 2008.
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Doping evolution of the electronic structure in the single-layer cuprates Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$: Comparison with other single-layer cuprates
Authors:
M. Hashimoto,
T. Yoshida,
H. Yagi,
M. Takizawa,
A. Fujimori,
M. Kubota,
K. Ono,
K. Tanaka,
D. H. Lu,
Z. -X. Shen,
S. Ono,
Yoichi Ando
Abstract:
We have performed angle-resolved photoemission and core-level x-ray photoemission studies of the single-layer cuprate Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$ (Bi2201) and revealed the doping evolution of the electronic structure from the lightly-doped to optimally-doped regions. We have observed the formation of the dispersive quasi-particle band, evolution of the Fermi ``arc'' into the Fermi surface…
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We have performed angle-resolved photoemission and core-level x-ray photoemission studies of the single-layer cuprate Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$ (Bi2201) and revealed the doping evolution of the electronic structure from the lightly-doped to optimally-doped regions. We have observed the formation of the dispersive quasi-particle band, evolution of the Fermi ``arc'' into the Fermi surface and the shift of the chemical potential with hole doping as in other cuprates. The doping evolution in Bi2201 is similar to that in Ca$_{2-x}$Na$_{x}$CuO$_{2}$Cl$_2$ (Na-CCOC), where a rapid chemical potential shift toward the lower Hubbard band of the parent insulator has been observed, but is quite different from that in La$_{2-x}$Sr$_{x}$CuO$_{4}$ (LSCO), where the chemical potential does not shift, yet the dispersive band and the Fermi arc/surface are formed around the Fermi level already in the lightly-doped region. The (underlying) Fermi surface shape and band dispersions are quantitatively analyzed using tight-binding fit, and the deduced next-nearest-neighbor hopping integral $t'$ also confirm the similarity to Na-CCOC and the difference from LSCO.
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Submitted 10 March, 2008; v1 submitted 5 January, 2008;
originally announced January 2008.
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Effects of electron-phonon coupling in angle-resolved photoemission spectra of SrTiO3
Authors:
K. Maekawa,
M. Takizawa,
H. Wadati,
T. Yoshida,
A. Fujimori,
H. Kumigashira,
M. Oshima
Abstract:
We have studied the O 2p valence-band structure of Nb-doped SrTiO3, in which a dilute concentration of electrons are doped into the d0 band insulator, by angle-resolved photoemission spectroscopy (ARPES) measurements. We found that ARPES spectra at the valence band maxima at the M [k = (pi/a, pi/a, 0)]and R [k = (pi/a, pi/a, pi/a)] points start from ~ 3.3 eV below the Fermi level (EF), consisten…
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We have studied the O 2p valence-band structure of Nb-doped SrTiO3, in which a dilute concentration of electrons are doped into the d0 band insulator, by angle-resolved photoemission spectroscopy (ARPES) measurements. We found that ARPES spectra at the valence band maxima at the M [k = (pi/a, pi/a, 0)]and R [k = (pi/a, pi/a, pi/a)] points start from ~ 3.3 eV below the Fermi level (EF), consistent with the indirect band gap of 3.3 eV and the EF position at the bottom of the conduction band. The peak position of the ARPES spectra were, however, shifted toward higher binding energies by ~ 500 meV from the 3.3 eV threshold. Because the bands at M and R have pure O 2p character, we attribute this ~ 500 meV shift to strong coupling of the oxygen p hole with optical phonons in analogy with the peak shifts observed for d-electron photoemission spectra in various transition-metal oxides.
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Submitted 27 December, 2007;
originally announced December 2007.
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Systematic changes of the electronic structure of the diluted ferromagnetic oxide Li-doped Ni$_{1-x}$Fe$_x$O with hole doping
Authors:
M. Kobayashi,
J. I. Hwang,
G. S. Song,
Y. Ooki,
M. Takizawa,
A. Fujimori,
Y. Takeda,
S. -I. Fujimori,
K. Terai,
T. Okane,
Y. Saitoh,
H. Yamagami,
Y. -H. Lin,
C. -W. Nan
Abstract:
The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li doping. In contrast, the Fe$^{3+}$ intensity increased with Li doping relative to the Fe$^{2+}$ intensity. However, the increase of Fe$^{3+}$ is only $\sim 5%$ of the doped Li…
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The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li doping. In contrast, the Fe$^{3+}$ intensity increased with Li doping relative to the Fe$^{2+}$ intensity. However, the increase of Fe$^{3+}$ is only $\sim 5%$ of the doped Li content, suggesting that most of the doped holes enter the O $2p$ and/or the charge-transferred configuration Ni $3d^8\underline{L}$. The Fe 3d partial density of states and the host valence-band emission near valence-band maximum increased with Li content, consistent with the increase of electrical conductivity. Based on these findings, percolation of bound magnetic polarons is proposed as an origin of the ferromagnetic behavior.
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Submitted 29 November, 2007;
originally announced November 2007.
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Photoemission and x-ray absorption studies of valence states in (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films exhibiting photo-induced magnetization
Authors:
M. Kobayashi,
Y. Ooki,
M. Takizawa,
G. S. Song,
A. Fujimori,
Y. Takeda,
K. Terai,
T. Okane,
S. -I. Fujimori,
Y. Saitoh,
H. Yamagami,
M. Seki,
T. Kawai,
H. Tabata
Abstract:
By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, which exhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of $\sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films wer…
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By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, which exhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of $\sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe$^{3+}$) and tetravalent (Ti$^{4+}$), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe$^{2+}$ ions increased with Ti concentration, consistent with the proposed charge-transfer mechanism of PIM.
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Submitted 15 November, 2007;
originally announced November 2007.
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Chemical potential shift induced by double-exchange and polaronic effects in Nd_{1-x}Sr_xMnO_3
Authors:
K. Ebata,
M. Takizawa,
K. Maekawa,
A. Fujimori,
H. Kuwahara,
Y. Tomioka,
Y. Tokura
Abstract:
We have studied the chemical potential shift as a function of temperature in Nd$_{1-x}$Sr$_x$MnO$_3$ (NSMO) by measurements of core-level photoemission spectra. For ferromagnetic samples ($x=0.4$ and 0.45), we observed an unusually large upward chemical potential shift with decreasing temperature in the low-temperature region of the ferromagnetic metallic (FM) phase. This can be explained by the…
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We have studied the chemical potential shift as a function of temperature in Nd$_{1-x}$Sr$_x$MnO$_3$ (NSMO) by measurements of core-level photoemission spectra. For ferromagnetic samples ($x=0.4$ and 0.45), we observed an unusually large upward chemical potential shift with decreasing temperature in the low-temperature region of the ferromagnetic metallic (FM) phase. This can be explained by the double-exchange (DE) mechanism if the $e_g$ band is split by dynamical/local Jahn-Teller effect. The shift was suppressed near the Curie temperature ($T_C$), which we attribute to the crossover from the DE to lattice-polaron regimes.
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Submitted 24 October, 2007;
originally announced October 2007.
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Phase Change Observed in Ultrathin Ba0.5Sr0.5TiO3 Films by in-situ Resonant Photoemission Spectroscopy
Authors:
Y. -H. Lin,
K. Terai,
H. Wadati,
M. Kobayashi,
M. Takizawa,
J. I. Hwang,
A. Fujimori,
C. -W. Nan,
J. -F. Li,
S. -I. Fujimori,
T. Okane,
Y. Saitoh,
K. Kobayashi
Abstract:
Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~…
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Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~7 monolayers) and 2.0 nm (~5 monolayers) Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for phase change in the range of 2.0 nm to 2.8 nm. This may be ascribed mainly to the intrinsic size effects.
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Submitted 24 May, 2007;
originally announced May 2007.
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Photoemission study of TiO2/VO2 interfaces
Authors:
K. Maekawa,
M. Takizawa,
H. Wadati,
T. Yoshida,
A. Fujimori,
H. Kumigashira,
M. Oshima,
Y. Muraoka,
Y. Nagao,
Z. Hiroi
Abstract:
We have measured photoemission spectra of two kinds of TiO$_2$-capped VO$_2$ thin films, namely, that with rutile-type TiO$_2$ (r-TiO$_2$/VO$_2$) and that with amorphous TiO$_2$ (a-TiO$_2$/VO$_2$) capping layers. Below the Metal-insulator transition temperature of the VO$_2$ thin films, $\sim 300$ K, metallic states were not observed for the interfaces with TiO$_2$, in contrast with the interfac…
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We have measured photoemission spectra of two kinds of TiO$_2$-capped VO$_2$ thin films, namely, that with rutile-type TiO$_2$ (r-TiO$_2$/VO$_2$) and that with amorphous TiO$_2$ (a-TiO$_2$/VO$_2$) capping layers. Below the Metal-insulator transition temperature of the VO$_2$ thin films, $\sim 300$ K, metallic states were not observed for the interfaces with TiO$_2$, in contrast with the interfaces between the band insulator SrTiO$_3$ and the Mott insulator LaTiO$_3$ in spite of the fact that both TiO$_2$ and SrTiO$_3$ are band insulators with $d^0$ electronic configurations and both VO$_2$ and LaTiO$_3$ are Mott insulators with $d^1$ electronic configurations. We discuss possible origins of this difference and suggest the importance of the polarity discontinuity of the interfaces. Stronger incoherent part was observed in r-TiO$_2$/VO$_2$ than in a-TiO$_2$/VO$_2$, suggesting Ti-V atomic diffusion due to the higher deposition temperature for r-TiO$_2$/VO$_2$.
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Submitted 17 November, 2006;
originally announced November 2006.
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Chemical potential shift and spectral weight transfer in Pr$_{1-x}$Ca$_x$MnO$_3$ revealed by photoemission spectroscopy
Authors:
K. Ebata,
H. Wadati,
M. Takizawa,
A. Fujimori,
A. Chikamatsu,
H. Kumigashira,
M. Oshima,
Y. Tomioka,
Y. Tokura
Abstract:
We have studied the chemical potential shift and changes in the electronic density of states near the Fermi level ($E_F$) as a function of carrier concentration in Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO, $0.2 \le x \le 0.65$) through the measurements of photoemission spectra. The results showed that the chemical potential shift was suppressed for $x \agt 0.3$, where the charge exchange (CE)-type antiferr…
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We have studied the chemical potential shift and changes in the electronic density of states near the Fermi level ($E_F$) as a function of carrier concentration in Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO, $0.2 \le x \le 0.65$) through the measurements of photoemission spectra. The results showed that the chemical potential shift was suppressed for $x \agt 0.3$, where the charge exchange (CE)-type antiferromagnetic charge-ordered state appears at low temperatures. We consider this observation to be related to charge self-organization such as stripe formation on a microscopic scale in this composition range. Together with the previous observation of monotonous chemical potential shift in La$_{1-x}$Sr$_x$MnO$_3$, we conclude that the tendency toward the charge self-organization increases with decreasing bandwidth. In the valence band, spectral weight of the Mn 3$d$ $e_g$ electrons in PCMO was transferred from $\sim$ 1 eV below $E_F$ to the region near $E_F$ with hole doping, leading to a finite intensity at $E_F$ even in the paramagnetic insulating phase for $x \agt 0.3$, probably related with the tendency toward charge self-organization. The finite intensity at $E_F$ in spite of the insulating transport behavior is consistent with fluctuations involving ferromagnetic metallic states.
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Submitted 14 June, 2006;
originally announced June 2006.
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Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices
Authors:
M. Takizawa,
H. Wadati,
K. Tanaka,
M. Hashimoto,
T. Yoshida,
A. Fujimori,
A. Chikamtsu,
H. Kumigashira,
M. Oshima,
K. Shibuya,
T. Mihara,
T. Ohnishi,
M. Lippmaa,
M. Kawasaki,
H. Koinuma,
S. Okamoto,
A. J. Millis
Abstract:
We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. Finite coherent spectral weight with a clear Fermi cut-off was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an ``electronic reconstruction'' occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 in…
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We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. Finite coherent spectral weight with a clear Fermi cut-off was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an ``electronic reconstruction'' occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 interfaces annealed at high temperatures (~ 1000 C), which leads to Sr/La atomic interdiffusion and hence to the formation of La1-xSrxTiO3-like material, the intensity of the incoherent part was found to be dramatically reduced whereas the coherent part with a sharp Fermi cut-off is enhanced due to the spread of charge. These important experimental features are well reproduced by layer dynamical-mean-field-theory calculation.
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Submitted 7 April, 2006;
originally announced April 2006.
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Effect of strong localization of doped holes in angle-resolved photoemission spectra of La$_{1-x}$Sr$_x$FeO$_3$
Authors:
H. Wadati,
A. Chikamatsu,
M. Takizawa,
R. Hashimoto,
H. Kumigashira,
T. Yoshida,
T. Mizokawa,
A. Fujimori,
M. Oshima,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have performed an angle-resolved photoemission spectroscopy study of La$_{0.6}$Sr$_{0.4}$FeO$_3$ using {\it in situ} prepared thin films and determined its band structure. The experimental band dispersions could be well explained by an empirical band structure assuming the G-type antiferromagnetic state. However, the Fe 3d bands were found to be shifted downward relative to the Fermi level (…
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We have performed an angle-resolved photoemission spectroscopy study of La$_{0.6}$Sr$_{0.4}$FeO$_3$ using {\it in situ} prepared thin films and determined its band structure. The experimental band dispersions could be well explained by an empirical band structure assuming the G-type antiferromagnetic state. However, the Fe 3d bands were found to be shifted downward relative to the Fermi level ($E_F$) by $\sim 1$ eV compared with the calculation and to form a (pseudo)gap of $\sim 1$ eV at $E_F$. We attribute this observation to a strong localization effect of doped holes due to polaron formation.
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Submitted 13 March, 2006;
originally announced March 2006.
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Valence changes associated with the metal-insulator transition in Bi$_{1-x}$La$_x$NiO$_3$
Authors:
H. Wadati,
M. Takizawa,
T. T. Tran,
K. Tanaka,
T. Mizokawa,
A. Fujimori,
A. Chikamatsu,
H. Kumigashira,
M. Oshima,
S. Ishiwata,
M. Azuma,
M. Takano
Abstract:
Perovskite-type BiNiO$_3$ is an insulating antiferromagnet in which a charge disproportionation occurs at the Bi site. La substitution for Bi suppresses the charge disproportionation and makes the system metallic. We have measured the photoemission and x-ray absorption (XAS) spectra of Bi$_{1-x}$La$_{x}$NiO$_{3}$ to investigate how the electronic structure changes with La doping. From Ni $2p$ XA…
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Perovskite-type BiNiO$_3$ is an insulating antiferromagnet in which a charge disproportionation occurs at the Bi site. La substitution for Bi suppresses the charge disproportionation and makes the system metallic. We have measured the photoemission and x-ray absorption (XAS) spectra of Bi$_{1-x}$La$_{x}$NiO$_{3}$ to investigate how the electronic structure changes with La doping. From Ni $2p$ XAS, we observed an increase of the valence of Ni from 2+ toward 3+. Combined with the core-level photoemission study, it was found that the average valence of Bi remains $\sim 4+$ and that the Ni valence behaves as $\sim (2+x)+$, that is, La substitution results in hole doping at the Ni sites. In the valence-band photoemission spectra, we observed a Fermi cutoff for $x>0$, consistent with the metallic behavior of the La-doped compounds. The Ni $2p$ XAS, Ni $2p$ core-level photoemission, and valence-band photoemission spectra were analyzed by configuration-interaction cluster-model calculation, and the spectral line shapes were found to be consistent with the gradual Ni$^{2+} \to$ Ni$^{3+}$ valence change.
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Submitted 26 May, 2005;
originally announced May 2005.
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Manifestation of Correlation Effects in the photoemission spectra of Ca$_{1-x}$Sr$_x$RuO$_3$
Authors:
M. Takizawa,
D. Toyota,
H. Wadati,
A. Chikamatsu,
H. Kumigashira,
A. Fujimori,
M. Oshima,
Z. Fang,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have measured soft x-ray photoemission and O 1{\it s} x-ray absorption spectra of Ca$_{1-x}$Sr$_x$RuO$_3$ thin films prepared {\it in situ}. The coherent and incoherent parts have been identified in the bulk component of the photoemission spectra, and spectral weight transfer from the coherent to the incoherent part has been observed with decreasing $x$, namely, with increasing orthorhombic d…
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We have measured soft x-ray photoemission and O 1{\it s} x-ray absorption spectra of Ca$_{1-x}$Sr$_x$RuO$_3$ thin films prepared {\it in situ}. The coherent and incoherent parts have been identified in the bulk component of the photoemission spectra, and spectral weight transfer from the coherent to the incoherent part has been observed with decreasing $x$, namely, with increasing orthorhombic distortion. We propose that, while the Ru 4d one-electron bandwidth does not change with $x$, the distortion and hence the splitting of the $t_{2\text{g}}$ band effectively increases electron correlation strength. Although strong mass enhancement is found in the electronic specific heat data, the coherent part remains wide, suggesting enhanced band narrowing only in the vicinity of {\it E$_{F}$}.
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Submitted 27 December, 2004;
originally announced December 2004.
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Temperature-dependent soft x-ray photoemission and absorption studies of charge disproportionation in La$_{1-x}$Sr$_x$FeO$_3$
Authors:
H. Wadati,
A. Chikamatsu,
R. Hashimoto,
M. Takizawa,
H. Kumigashira,
A. Fujimori,
M. Oshima,
M. Lippmaa,
M. Kawasaki,
H. Koinuma
Abstract:
We have measured the temperature dependence of the photoemission and x-ray absorption spectra of La$_{1-x}$Sr$_x$FeO$_3$ (LSFO) epitaxial thin films with $x=0.67$, where charge disproportionation ($3{Fe}^{3.67+}\to 2{Fe}^{3+}+ {Fe}^{5+}$) resulting in long-range spin and charge ordering is known to occur below $T_{CD}=190$ K. With decreasing temperature we observed gradual changes of the spectra…
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We have measured the temperature dependence of the photoemission and x-ray absorption spectra of La$_{1-x}$Sr$_x$FeO$_3$ (LSFO) epitaxial thin films with $x=0.67$, where charge disproportionation ($3{Fe}^{3.67+}\to 2{Fe}^{3+}+ {Fe}^{5+}$) resulting in long-range spin and charge ordering is known to occur below $T_{CD}=190$ K. With decreasing temperature we observed gradual changes of the spectra with spectral weight transfer over a wide energy range of $\sim 5$ eV. Above $T_{CD}$ the intensity at the Fermi level ($E_F$) was relatively high compared to that below $T_{CD}$ but still much lower than that in conventional metals. We also found a similar temperature dependence for $x=0.4$, and to a lesser extent for $x=0.2$. These observations suggest that a local charge disproportionation occurs not only in the $x=0.67$ sample below $T_{CD}$ but also over a wider temperature and composition range in LSFO. This implies that the tendency toward charge disproportionation may be the origin of the unusually wide insulating region of the LSFO phase diagram.
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Submitted 8 October, 2004;
originally announced October 2004.
