Showing 1–6 of 6 results for author: Takenouchi, T

Microscopic Evidence for Evolution of Superconductivity by Effective Carrier Doping in Boron-doped Diamond:11B-NMR study

Authors: H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi, T. Oguchi, H. Kawarada

Abstract: We have investigated the superconductivity discovered in boron (B)-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower symmetric B(2) site substituted as boron+hydrogen(B+H) complex, respectively. A clear evidence is presented that the eff… ▽ More We have investigated the superconductivity discovered in boron (B)-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower symmetric B(2) site substituted as boron+hydrogen(B+H) complex, respectively. A clear evidence is presented that the effective carriers introduced by B(1) substitution are responsible for the superconductivity, whereas the charge neutral B(2) sites does not offer the carriers effectively. The result is also corroborated by the density of states deduced by 1/T1T measurement, indicating that the evolution of superconductivity is driven by the effective carrier introduced by substitution at B(1) site. △ Less

Submitted 6 December, 2006; v1 submitted 4 October, 2006; originally announced October 2006.

Comments: 4 pages, 6 figures, to be published in Phys. Rev. B (Brief report)

Journal ref: Phys. Rev. B 75, 033301 (2007)

Observation of superconducting gap in boron-doped diamond by laser-excited photoemission spectroscopy

Authors: K. Ishizaka, R. Eguchi, S. Tsuda, T. Yokoya, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C. -T. Chen, C. Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin

Abstract: We have investigated the low energy electronic state of a boron-doped diamond thin film by the ultrahigh resolution laser-excited photoemission spectroscopy. We observed a clear shift of the leading edge below 11 K indicative of a superconducting gap opening ($Δ\sim 0.78$ meV at 4.5 K). The gap feature is significantly broad and the well-defined quasiparticle peak is not recognizable even at the… ▽ More We have investigated the low energy electronic state of a boron-doped diamond thin film by the ultrahigh resolution laser-excited photoemission spectroscopy. We observed a clear shift of the leading edge below 11 K indicative of a superconducting gap opening ($Δ\sim 0.78$ meV at 4.5 K). The gap feature is significantly broad and the well-defined quasiparticle peak is not recognizable even at the lowest temperature of measurement 4.5 K. We discuss our result in terms of possible disorder effect on superconductivity in this system. △ Less

Submitted 14 April, 2006; originally announced April 2006.

Comments: 12 pages, 4 figures

Journal ref: Phys. Rev. Lett. 98, 047003 (2007)

Low-energy electrodynamics of superconducting diamond

Authors: M. Ortolani, S. Lupi, L. Baldassarre, P. Calvani, U. Schade, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada

Abstract: Heavily-boron-doped diamond films become superconducting with critical temperatures $T_c$ well above 4 K. Here we first measure the reflectivity of such a film down to 5 cm$^{-1}$, by also using Coherent Synchrotron Radiation. We thus determine the optical gap, the field penetration depth, the range of action of the Ferrell-Glover-Tinkham sum rule, and the electron-phonon spectral function. We c… ▽ More Heavily-boron-doped diamond films become superconducting with critical temperatures $T_c$ well above 4 K. Here we first measure the reflectivity of such a film down to 5 cm$^{-1}$, by also using Coherent Synchrotron Radiation. We thus determine the optical gap, the field penetration depth, the range of action of the Ferrell-Glover-Tinkham sum rule, and the electron-phonon spectral function. We conclude that diamond behaves as a dirty BCS superconductor. △ Less

Submitted 6 February, 2006; originally announced February 2006.

Comments: 4 pages including 3 figures

Journal ref: Phys. Rev. Lett. 97, 097002 (2006)

Phonon Softening in Superconducting Diamond

Authors: M. Hoesch, T. Fukuda, T. Takenouchi, J. P. Sutter, S. Tsutsui, A. Q. R. Baron, M. Nagao, Y. Takano, H. Kawarada, J. Mizuki

Abstract: We observe strong softening of optical phonon modes in superconducting (Tc = 4.2 K) boron doped diamond near the Brillouin zone center using inelastic x-ray scattering from a CVD-grown highly oriented sample. The magnitude of the softening, and our observation that it becomes stronger approaching zone center, supports theoretical models suggesting a phonon-mediated pairing mechanism via coupling… ▽ More We observe strong softening of optical phonon modes in superconducting (Tc = 4.2 K) boron doped diamond near the Brillouin zone center using inelastic x-ray scattering from a CVD-grown highly oriented sample. The magnitude of the softening, and our observation that it becomes stronger approaching zone center, supports theoretical models suggesting a phonon-mediated pairing mechanism via coupling of optical phonon modes to Fermi surfaces around the zone center. The electron-phonon coupling parameter is determined as approximately lambda= 0.33. △ Less

Submitted 13 April, 2007; v1 submitted 18 December, 2005; originally announced December 2005.

Comments: 4 pages, 3 figures; Version3: Completely revised, quantitative analysis of lambda; in print at Phys. Rev. B (rapid communication)

Superconductivity in Polycrystalline Diamond Thin Films

Authors: Yoshihiko Takano, Masanori Nagao, Tomohiro Takenouchi, Hitoshi Umezawa, Isao Sakaguchi, Masashi Tachiki, Hiroshi Kawarada

Abstract: Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron concentration in a wide range, and a high boron concentration, especially in (111) oriented films, compared to that of the high-pressure high-temperature method. T… ▽ More Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron concentration in a wide range, and a high boron concentration, especially in (111) oriented films, compared to that of the high-pressure high-temperature method. The superconducting transition temperatures are determined to be 8.7K for Tc onset and 5.0K for zero resistance by transport measurements. And the upper critical field is estimated to be around 7T. △ Less

Submitted 18 September, 2005; v1 submitted 20 July, 2005; originally announced July 2005.

Comments: 6 pages, 6 figures

Journal ref: Diamond & Related Materials 14 (2005) 1936 -- 1938

Advantage on Superconductivity of Heavily Boron-Doped (111) Diamond Films

Authors: Hitoshi Umezawa, Tomohiro Takenouchi, Yoshihiko Takano, Kensaku Kobayashi, Masanori Nagao, Isao Sakaguchi, Minoru Tachiki, Takeshi Hatano, Guofang Zhong, Masashi Tachiki, Hiroshi Kawarada

Abstract: The superconductivity transition temperatures Tc(onset) of 11.4 K and Tc(offset) of 7.4 K, which are the highest in diamond at present, are realized on homoepitaxially grown (111) diamond films with a high boron doping concentration of 8.4E21 cm-3 (4.7 atomic percent). Tc values of (111) diamond films are more than twice as high as those of (100) films at the equivalent boron concentration. The… ▽ More The superconductivity transition temperatures Tc(onset) of 11.4 K and Tc(offset) of 7.4 K, which are the highest in diamond at present, are realized on homoepitaxially grown (111) diamond films with a high boron doping concentration of 8.4E21 cm-3 (4.7 atomic percent). Tc values of (111) diamond films are more than twice as high as those of (100) films at the equivalent boron concentration. The Tc of boron-doped (111) diamond increases as the boron content increases up to the maximum incorporated concentration and is agrees with the value estimated using McMillan's equation. The advantageous Tc for (111) diamond films is due to the higher carrier concentration which exceeds its boron concentration. △ Less

Submitted 11 March, 2005; originally announced March 2005.

Comments: 22 pages, 6 figures