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Carrier Localization and Spontaneous Formation of Two-Dimensional Polarization Domain in Halide Perovskites
Authors:
Andrew Grieder,
Marcos Calegari Andrade,
Hiroyuki Takenaka,
Tadashi Ogitsu,
Liang Z. Tan,
Yuan Ping
Abstract:
Halide perovskites are known for their rich phase diagram and superior performance in diverse optoelectronics applications. The latter property is often attributed to the long electron-hole recombination time, whose underlying physical mechanism has been a long-standing controversy. In this Letter, we investigate the transport and localization properties of electron and hole carriers in a prototyp…
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Halide perovskites are known for their rich phase diagram and superior performance in diverse optoelectronics applications. The latter property is often attributed to the long electron-hole recombination time, whose underlying physical mechanism has been a long-standing controversy. In this Letter, we investigate the transport and localization properties of electron and hole carriers in a prototypical halide perovskite (CsPbBr$_3$), through \textit{ab initio} tight-binding nonadiabatic dynamics approach for large-scale (tens of nm size) supercell calculations, to simulate electron and ion dynamics on the same footing. We found distinct structural, lattice polarization, and electron-phonon coupling properties at low (below 100 K) and high temperatures, consistent with experimental observations. In particular, at low temperature we find spontaneous formation of polar grain boundaries in the nonpolar bulk systems, which result in two-dimensional polarization patterns that serve to localize and separate electrons and holes. We reveal phonon-assisted variable-range hopping mostly responsible for low-temperature transport, and their characteristic frequency correlates with temperature-dependent phonon power spectrum and energy oscillation frequency in nonadiabatic dynamics. We answer the critical questions of long electron-hole recombination lifetime at low temperature and offer the correlation among polarization domains, electron-phonon couplings, and photocarrier dynamics.
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Submitted 17 September, 2025; v1 submitted 27 February, 2025;
originally announced February 2025.
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Spin Relaxation and Diffusion in Monolayer 1T'-WTe$_2$ from First-Principles
Authors:
Junqing Xu,
Hiroyuki Takenaka,
Andrew Grieder,
Jacopo Simoni,
Ravishankar Sundraraman,
Yuan Ping
Abstract:
Understanding spin relaxation in topological systems such as quantum spin-hall (QSH) insulator is critical for realizing coherent transport at high temperature. WTe$_{2}$, known as a QSH insulator with a high transition temperature of 100K, is an important test-bed of unveiling spin relaxation mechanism in topological materials. In this work, we employ our recently-developed \emph{ab initio} densi…
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Understanding spin relaxation in topological systems such as quantum spin-hall (QSH) insulator is critical for realizing coherent transport at high temperature. WTe$_{2}$, known as a QSH insulator with a high transition temperature of 100K, is an important test-bed of unveiling spin relaxation mechanism in topological materials. In this work, we employ our recently-developed \emph{ab initio} density-matrix dynamics approach to investigate spin relaxation mechanism, and calculate spin lifetime and diffusion length of monolayer 1T'-WTe$_{2}$, at finite temperature under an external electric field. We found the spin lifetime of electrons have the largest anisotropy when measuring along the canted-spin-texture direction. Moreover, we found an opposite trend between spin and carrier relaxation against applied electric field. Most importantly, the relaxation mechanism under intermediate electric field around 1V/nm can not be explained by either Eillot-Yafet or Dyakonov-Perel models, which highlights the generality of our \emph{ab initio} density-matrix framework. We then proposed analytical models to explain its mechanism and compare well with \emph{ab initio} results at small and large electric field. We predict that spin lifetime and spin diffusion length of bulk-state electrons are $\sim$1 ps and $\sim$30 nm at room temperature respectively, suggesting its promise for spintronic applications.
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Submitted 15 August, 2024;
originally announced August 2024.
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Giant Spin Lifetime Anisotropy and Spin-Valley Locking in Silicene and Germanene from First-Principles Density-Matrix Dynamics
Authors:
Junqing Xu,
Hiroyuki Takenaka,
Adela Habib,
Ravishankar Sundararaman,
Yuan Ping
Abstract:
Through First-Principles real-time Density-Matrix (FPDM) dynamics simulations, we investigate spin relaxation due to electron-phonon and electron-impurity scatterings with spin-orbit coupling in two-dimensional Dirac materials - silicene and germanene, at finite temperatures and under external fields. We discussed the applicability of conventional descriptions of spin relaxation mechanisms by Elli…
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Through First-Principles real-time Density-Matrix (FPDM) dynamics simulations, we investigate spin relaxation due to electron-phonon and electron-impurity scatterings with spin-orbit coupling in two-dimensional Dirac materials - silicene and germanene, at finite temperatures and under external fields. We discussed the applicability of conventional descriptions of spin relaxation mechanisms by Elliott-Yafet (EY) and D'yakonov-Perel' (DP) compared to our FPDM method, which is determined by a complex interplay of intrinsic spin-orbit coupling, external fields, and electron-phonon coupling strength, beyond crystal symmetry. For example, the electric field dependence of spin relaxation time is close to DP mechanism for silicene at room temperature, but rather similar to EY mechanism for germanene. Due to its stronger spin-orbit coupling strength and buckled structure in sharp contrast to graphene, germanene has a giant spin lifetime anisotropy and spin valley locking effect under nonzero Ez and relatively low temperature. More importantly, germanene has extremely long spin lifetime (~100 ns at 50 K) and ultrahigh carrier mobility, which makes it advantageous for spin-valleytronic applications.
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Submitted 3 October, 2021;
originally announced October 2021.
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Stable Polar Oxynitrides through Epitaxial Strain
Authors:
Li Zhu,
Hiroyuki Takenaka,
R. E. Cohen
Abstract:
We investigate energetically favorable structures of ABO$_2$N oxynitrides as functions of pressure and strain via swarm-intelligence-based structure prediction methods, DFT lattice dynamics and first-principles molecular dynamics. We predict several thermodynamically stable polar oxynitride perovskites under high pressures. In addition, we find that ferroelectric polar phases of perovskite-structu…
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We investigate energetically favorable structures of ABO$_2$N oxynitrides as functions of pressure and strain via swarm-intelligence-based structure prediction methods, DFT lattice dynamics and first-principles molecular dynamics. We predict several thermodynamically stable polar oxynitride perovskites under high pressures. In addition, we find that ferroelectric polar phases of perovskite-structured oxynitrides can be thermodynamically stable and synthesized at high pressure on appropriate substrates. The dynamical stability of the ferroelectric oxynitrides under epitaxial strain at ambient pressure also imply the possibility to synthesize them using pulsed laser deposition or other atomic layer deposition methods. Our results have broad implications for further exploration of other oxynitride materials as well. We performed first-principles molecular dynamics and find that the polar perovskite of YSiO$_2$N is metastable up to at least 600 K under compressive epitaxial strain before converting to the stable wollastonite-like structures. YSiO$_2$N is stabilized under pressure with extensional epitaxial strain. We predict that LaSi$_2$N, LaGeO$_2$N, BiSiO$_2$N, and BiGeO$_2$N are metastable as ferroelectric perovskites at zero pressure even without epitaxial strain.
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Submitted 9 June, 2021; v1 submitted 14 August, 2020;
originally announced August 2020.
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Magnetoelectric control of topological phases in graphene
Authors:
Hiroyuki Takenaka,
Shane Sandhoefner,
Alexey A. Kovalev,
Evgeny Y. Tsymbal
Abstract:
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which involves the topological electronic states coupled to the AFM order parameter known as the N$\acute{\rm e}$el vector. The control of these states is envisioned through manipulation of the N$\acute{\rm e}$el vector by spin-orbit torques driven by electric currents. Here we propose a different approach favorable…
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Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which involves the topological electronic states coupled to the AFM order parameter known as the N$\acute{\rm e}$el vector. The control of these states is envisioned through manipulation of the N$\acute{\rm e}$el vector by spin-orbit torques driven by electric currents. Here we propose a different approach favorable for low-power AFM spintronics, where the control of the topological states in a two-dimensional material, such as graphene, is performed via the proximity effect by the voltage induced switching of the N$\acute{\rm e}$el vector in an adjacent magnetoelectric AFM insulator, such as chromia. Mediated by the symmetry protected boundary magnetization and the induced Rashba-type spin-orbit coupling at the interface between graphene and chromia, the emergent topological phases in graphene can be controlled by the N$\acute{\rm e}$el vector. Using density functional theory and tight-binding Hamiltonian approaches, we model a graphene/Cr2O3 (0001) interface and demonstrate non-trivial band gap openings in the graphene Dirac bands asymmetric between the K and K' valleys. This gives rise to an unconventional quantum anomalous Hall effect (QAHE) with a quantized value of $2e^2/h$ and an additional step-like feature at a value close to $e^2/2h$, and the emergence of the spin-polarized valley Hall effect (VHE). Furthermore, depending on the N$\acute{\rm e}$el vector orientation, we predict the appearance and transformation of different topological phases in graphene across the $180^{\circ}$ AFM domain wall, involving the QAHE, the valley-polarized QAHE and the quantum VHE (QVHE), and the emergence of the chiral edge state along the domain wall. These topological properties are controlled by voltage through magnetoelectric switching of the AFM insulator with no need for spin-orbit torques.
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Submitted 26 July, 2019;
originally announced July 2019.
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First-principles studies of the local structure and relaxor behavior of Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$-PbTiO$_3$-derived ferroelectric perovskite solid solutions
Authors:
Hengxin Tan,
Hiroyuki Takenaka,
Changsong Xu,
Wenhui Duan,
Ilya Grinberg,
Andrew M. Rappe
Abstract:
We have investigated the effect of transition metal dopants on the local structure of the prototypical 0.75 Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$-0.25 PbTiO$_3$ relaxor ferroelectric. We find that these dopants give rise to very different local structure and other physical properties. For example, when Mg is partially substituted by Cu or Zn, the displacement of Cu or Zn is much larger than that of Mg, an…
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We have investigated the effect of transition metal dopants on the local structure of the prototypical 0.75 Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$-0.25 PbTiO$_3$ relaxor ferroelectric. We find that these dopants give rise to very different local structure and other physical properties. For example, when Mg is partially substituted by Cu or Zn, the displacement of Cu or Zn is much larger than that of Mg, and is even comparable to that of Nb. The polarization of these systems is also increased, especially for the Cu-doped solution, due to the large polarizability of Cu and Zn. As a result, the predicted maximum dielectric constant temperatures ($T_m$) are increased. On the other hand, the replacement of a Ti atom with a Mo or Tc dramatically decreases the displacements of the cations and the polarization, and thus, the $T_m$ values are also substantially decreased. The higher $T_m$ cannot be explained by the conventional argument based on the ionic radii of the cations. Furthermore, we find that Cu, Mo, or Tc doping increase the cations displacement disorder. The effect of the dopants on the temperature dispersion $ΔT_m$, which is the change of $T_m$ for different frequencies, is also discussed. Our findings lay the foundation for further investigations of unexplored dopants.
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Submitted 29 November, 2017;
originally announced November 2017.
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First-principles calculation of bulk photovoltaic effect in CH$_3$NH$_3$PbI$_3$ and CH$_3$NH$_3$PbI$_{3-x}$Cl$_{x}$
Authors:
Fan Zheng,
Hiroyuki Takenaka,
Fenggong Wang,
Nathan Z. Koocher,
Andrew M. Rappe
Abstract:
Hybrid halide perovskites exhibit nearly 20% power conversion efficiency, but the origin of their high efficiency is still unknown. Here, we compute the shift current, a dominant mechanism of bulk photovoltaic (PV) effect for ferroelectric photovoltaics, in CH$_3$NH$_3$PbI$_3$ and CH$_3$NH$_3$PbI$_{3-x}$Cl$_{x}$ from first principles. We find that these materials give approximately three times lar…
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Hybrid halide perovskites exhibit nearly 20% power conversion efficiency, but the origin of their high efficiency is still unknown. Here, we compute the shift current, a dominant mechanism of bulk photovoltaic (PV) effect for ferroelectric photovoltaics, in CH$_3$NH$_3$PbI$_3$ and CH$_3$NH$_3$PbI$_{3-x}$Cl$_{x}$ from first principles. We find that these materials give approximately three times larger shift current PV response to near-IR and visible light than the prototypical ferroelectric photovoltaic BiFeO$_3$. The molecular orientations of CH$_3$NH$_3^{+}$ can strongly affect the corresponding PbI$_3$ inorganic frame so as to alter the magnitude of the shift current response. Specifically, configurations with dipole moments aligned in parallel distort the inorganic PbI$_3$ frame more significantly than configurations with near net zero dipole, yielding a larger shift current response. Furthermore, we explore the effect of Cl substitution on shift current, and find that Cl substitution at the equatorial site induces a larger response than does substitution at the apical site.
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Submitted 13 October, 2014;
originally announced October 2014.
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Density Functional Theory Study Of Hypothetical PbTiO3-Based Oxysulfides
Authors:
John A. Brehm,
Hiroyuki Takenaka,
Chan-Woo Lee,
Ilya Grinberg,
Joseph W. Bennett,
Michael Rutenberg Schoenberg,
Andrew M. Rappe
Abstract:
Using density functional theory (DFT) within the local density approximation (LDA), we calculate the physical and electronic properties of PbTiO3 (PTO) and a series of hypothetical compounds PbTiO3-xSx x = 0.2, 0.25, 0.33, 0.5, 1, 2, and 3 arranged in the corner-sharing cubic perovskite structure. We determine that replacing the apical oxygen atom in the PTO tetragonal unit cell with a sulfur atom…
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Using density functional theory (DFT) within the local density approximation (LDA), we calculate the physical and electronic properties of PbTiO3 (PTO) and a series of hypothetical compounds PbTiO3-xSx x = 0.2, 0.25, 0.33, 0.5, 1, 2, and 3 arranged in the corner-sharing cubic perovskite structure. We determine that replacing the apical oxygen atom in the PTO tetragonal unit cell with a sulfur atom reduces the x = 0 LDA calculated band gap of 1.47 eV to 0.43 - 0.67 eV for x = 0.2 - 1 and increases the polarization. PBE0 and GW methods predict that the hypothetical compositions x = 0.2 to x = 2 will have band gaps in the visible range. For all values of x < 2, the oxysulfide perovskite retains the tetragonal phase of PbTiO3, and the a-lattice parameter remains within 2.5% of the oxide. Thermodynamic analysis indicates that chemical routes using high temperature gas, such as H2S and CS2, can be used to substitute O for S in PTO for the compositions x = 0.2 - 0.5.
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Submitted 21 May, 2014; v1 submitted 13 November, 2013;
originally announced November 2013.
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Anisotropic Local Correlations and Dynamics in a Relaxor Ferroelectric
Authors:
Hiroyuki Takenaka,
Ilya Grinberg,
Andrew M. Rappe
Abstract:
Relaxor ferroelectrics have been a focus of intense attention due to their anomalous dielectric characteristics, diffuse phase transitions, and strong piezoelectricity. Understanding the structure and dynamics of relaxors has been one of the long-standing challenges in solid-state physics, with the current model of polar nanoregions in a non-polar matrix providing only a qualitative description of…
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Relaxor ferroelectrics have been a focus of intense attention due to their anomalous dielectric characteristics, diffuse phase transitions, and strong piezoelectricity. Understanding the structure and dynamics of relaxors has been one of the long-standing challenges in solid-state physics, with the current model of polar nanoregions in a non-polar matrix providing only a qualitative description of the relaxor phase transitions. In this paper, we investigate the local structure and dynamics in 75%PbMg$_{1/3}$Nb$_{2/3}$O$_3$-25%PbTiO$_3$ (PMN-PT) using molecular dynamics simulations and the dynamic pair distribution function technique. We show for the first time that relaxor transitions can be described by local order parameters. We find that structurally, the relaxor phase is characterized by the presence of highly anisotropic correlations between the local cation displacements. These correlations resemble the hydrogen bond network in water. Our findings contradict the current polar nanoregion model; instead, we suggest a new model of a homogeneous random network of anisotropically coupled dipoles.
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Submitted 4 December, 2012;
originally announced December 2012.
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Reinterpretation of bond-valence model with bond-order formalism: an improved bond-valence based interatomic potential for PbTiO$_3$
Authors:
Shi Liu,
Ilya Grinberg,
Hiroyuki Takenaka,
Andrew M. Rappe
Abstract:
We present a modified bond-valence model of PbTiO$_3$ based on the principles of bond-valence and bond-valence vector conservation. The relationship between the bond-valence model and the bond-order potential is derived analytically in the framework of a tight-binding model. A new energy term, bond-valence vector energy, is introduced into the atomistic model and the potential parameters are re-op…
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We present a modified bond-valence model of PbTiO$_3$ based on the principles of bond-valence and bond-valence vector conservation. The relationship between the bond-valence model and the bond-order potential is derived analytically in the framework of a tight-binding model. A new energy term, bond-valence vector energy, is introduced into the atomistic model and the potential parameters are re-optimized. The new model potential can be applied both to canonical ensemble ($NVT$) and isobaric-isothermal ensemble ($NPT$) molecular dynamics (MD) simulations. This model reproduces the experimental phase transition in $NVT$ MD simulations and also exhibits the experimental sequence of temperature-driven and pressure-driven phase transitions in $NPT$ simulations. We expect that this improved bond-valence model can be applied to a broad range of inorganic materials.
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Submitted 16 July, 2013; v1 submitted 21 November, 2012;
originally announced November 2012.
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Post density functional theoretical studies of highly polar semiconductive Pb(Ti$_{1-x}$Ni$_{x}$)O$_{3-x}$ solid solutions: The effects of cation arrangement on band gap
Authors:
Gaoyang Gou,
Joseph W. Bennett,
Hiroyuki Takenaka,
Andrew M. Rappe
Abstract:
We use a combination of conventional density functional theory (DFT) and post-DFT methods, including the local density approximation plus Hubbard $U$ (LDA+$U$), PBE0, and self-consistent $GW$ to study the electronic properties of Ni-substituted PbTiO$_{3}$ (Ni-PTO) solid solutions. We find that LDA calculations yield unreasonable band structures, especially for Ni-PTO solid solutions that contain…
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We use a combination of conventional density functional theory (DFT) and post-DFT methods, including the local density approximation plus Hubbard $U$ (LDA+$U$), PBE0, and self-consistent $GW$ to study the electronic properties of Ni-substituted PbTiO$_{3}$ (Ni-PTO) solid solutions. We find that LDA calculations yield unreasonable band structures, especially for Ni-PTO solid solutions that contain an uninterrupted NiO$_{2}$ layer. Accurate treatment of localized states in transition-metal oxides like Ni-PTO requires post-DFT methods. $B$-site Ni/Ti cation ordering is also investigated. The $B$-site cation arrangement alters the bonding between Ni and O, and therefore strongly affects the band gap ($E_{\rm g}$) of Ni-PTO. We predict that Ni-PTO solid solutions should have a direct band gap in the visible light energy range, with polarization similar to the parent PbTiO$_{3}$. This combination of properties make Ni-PTO solid solutions promising candidate materials for solar energy conversion devices.
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Submitted 11 February, 2011;
originally announced February 2011.
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Positron potential and wavefunction in LaFeAsO
Authors:
H. Takenaka,
D. J. Singh
Abstract:
We report calculations of the positron potential and wavefunction in LaFeAsO. These calculations show that the positron wavefunction does sample the entire unit cell although it is largest in the interstices of the La layer adjacent to As atoms. The implication is that angular correlation of annihilation radiation (ACAR) is a viable probe of the Fermi surfaces in this material. The results also…
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We report calculations of the positron potential and wavefunction in LaFeAsO. These calculations show that the positron wavefunction does sample the entire unit cell although it is largest in the interstices of the La layer adjacent to As atoms. The implication is that angular correlation of annihilation radiation (ACAR) is a viable probe of the Fermi surfaces in this material. The results also apply to positive muons, and indicate that these will be localized in the La layer adjacent to As.
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Submitted 29 May, 2008;
originally announced May 2008.
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Bonding of H in O vacancies of ZnO
Authors:
H. Takenaka,
D. J. Singh
Abstract:
We investigate the bonding of H in O vacancies of ZnO using density functional calculations. We find that H is anionic and does not form multicenter bonds with Zn in this compound.
We investigate the bonding of H in O vacancies of ZnO using density functional calculations. We find that H is anionic and does not form multicenter bonds with Zn in this compound.
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Submitted 2 April, 2007;
originally announced April 2007.
