Showing 1–50 of 74 results for author: Takeda, Y

Statistics of Strongly Coupled Defects in Superconducting Qubits

Authors: S. Weeden, D. C. Harrison, S. Patel, M. Snyder, E. J. Blackwell, G. Spahn, S. Abdullah, Y. Takeda, B. L. T. Plourde, J. M. Martinis, R. McDermott

Abstract: Decoherence in superconducting qubits is dominated by defects that reside at amorphous interfaces. Interaction with discrete defects results in dropouts that complicate qubit operation and lead to nongaussian tails in the distribution of qubit energy relaxation time $T_1$ that degrade system performance. Spectral diffusion of defects over time leads to fluctuations in $T_1$, posing a challenge for… ▽ More Decoherence in superconducting qubits is dominated by defects that reside at amorphous interfaces. Interaction with discrete defects results in dropouts that complicate qubit operation and lead to nongaussian tails in the distribution of qubit energy relaxation time $T_1$ that degrade system performance. Spectral diffusion of defects over time leads to fluctuations in $T_1$, posing a challenge for calibration. In this work, we measure the energy relaxation of flux-tunable transmons over a range of operating frequencies. We vary qubit geometry to change the interface participation ratio by more than an order of magnitude. Our results are consistent with loss dominated by discrete interfacial defects. Moreover, we are able to localize the dominant defects to within 500 nm of the qubit junctions, where residues from liftoff are present. These results motivate new approaches to qubit junction fabrication that avoid the residues intrinsic to the liftoff process. △ Less

Submitted 30 May, 2025; originally announced June 2025.

Comments: 12 pages, 5+10 figures

Magnetic anisotropy related to hybridization between Fe 3$d$ and As 4$p$ orbitals in a bcc Fe-As thin film

Authors: Takahito Takeda, Karumuri Sriharsha, Seiji Aota, Ryo Okano, Le Duc Anh, Yukiharu Takeda, Akira Yasui, Miho Kitamura, Yuki K. Wakabayashi, Atsushi Fujimori, Masaaki Tanaka, Masaki Kobayashi

Abstract: The magnetic anisotropy (MA) of Fe-based ferromagnetic thin films has been extensively studied for device applications. The examined material is a new Fe-based ferromagnetic thin film, bcc Fe$_{1-x}$As$_x$ (Fe-As) with the in-plane MA (IMA) grown on a GaAs (111)B substrate. The magnetic properties of the Fe-As thin film have been investigated by Xray magnetic circular dichroism (XMCD) and magnetic… ▽ More The magnetic anisotropy (MA) of Fe-based ferromagnetic thin films has been extensively studied for device applications. The examined material is a new Fe-based ferromagnetic thin film, bcc Fe$_{1-x}$As$_x$ (Fe-As) with the in-plane MA (IMA) grown on a GaAs (111)B substrate. The magnetic properties of the Fe-As thin film have been investigated by Xray magnetic circular dichroism (XMCD) and magnetic circular dichroism in hard X-ray photoemission spectroscopy (MCD-HAXPES) to elucidate the role of As ions in the IMA. The XMCD spectra at the Fe $L_{2,3}$ edge and MCD-HAXPES spectra of the Fe 2$p$ core level exhibit ferromagnetic and metallic features like Fe metal. The XMCD at the As $L_{2,3}$ edge demonstrates that the As ions contribute to the ferromagnetism of bcc Fe-As through the hybridization between the Fe 3$d$ and As 4$p$ orbitals. The estimations of the magnetic moments of Fe using the XMCD sum rules have revealed that the orbital magnetic moment is isotropic and the magnetic dipole term is anisotropic. The anisotropy of the magnetic dipole term can be attributed to the anisotropic $p-d$ hybridization due to epitaxial strain, contributing to the IMA of bcc Fe-As. Our findings enlighten the mechanism of the MA of the non-magnetic ion-doped bcc Fe thin film, which can be applied to other magnetic 3$d$ transition metal thin films doped with non-magnetic elements. △ Less

Submitted 9 May, 2025; originally announced May 2025.

Correlated Ligand Electrons in the Transition-Metal Oxide SrRuO$_3$

Authors: Yuichi Seki, Yuki K. Wakabayashi, Takahito Takeda, Kohdai Inagaki, Shin-ichi Fujimori, Yukiharu Takeda, Atsushi Fujimori, Yoshitaka Taniyasu, Hideki Yamamoto, Yoshiharu Krockenberger, Masaaki Tanaka, Masaki Kobayashi

Abstract: In transition-metal compounds, the transition-metal d electrons play an important role in their physical properties; however, the effects of the electron correlation between the ligand p electrons have not been clear yet. In this Letter, the Ru 4d and O 2p partial density of states (PDOS) in transition-metal oxide SrRuO$_3$ involving Weyl fermions are investigated by resonant photoemission spectro… ▽ More In transition-metal compounds, the transition-metal d electrons play an important role in their physical properties; however, the effects of the electron correlation between the ligand p electrons have not been clear yet. In this Letter, the Ru 4d and O 2p partial density of states (PDOS) in transition-metal oxide SrRuO$_3$ involving Weyl fermions are investigated by resonant photoemission spectroscopy. The observations demonstrate that the O 2p PDOS is distorted from that predicted by first-principles calculations than the Ru 4d PDOS. The results indicate that the electron correlation in the ligand orbitals will be important to understand the electronic structure of the p-d hybridized state in strongly correlated electron systems, even with topological states. △ Less

Submitted 6 September, 2024; originally announced September 2024.

Comments: 24 pages, 7 figures

Impact of the Ce $4f$ states in the electronic structure of the intermediate-valence superconductor CeIr$_3$

Authors: Shin-ichi Fujimori, Ikuto Kawasaki, Yukiharu Takeda, Hiroshi Yamagami, Norimasa Sasabe, Yoshiki J. Sato, Ai Nakamura, Yusei Shimizu, Arvind Maurya, Yoshiya Homma, Dexin Li, Fuminori Honda, Dai Aoki

Abstract: The electronic structure of the $f$-based superconductor $\mathrm{CeIr_3}$ was studied by photoelectron spectroscopy. The energy distribution of the $\mathrm{Ce}~4f$ states were revealed by the $\mathrm{Ce}~3d-4f$ resonant photoelectron spectroscopy. The $\mathrm{Ce}~4f$ states were mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the $\mathrm{Ce}~4f$ s… ▽ More The electronic structure of the $f$-based superconductor $\mathrm{CeIr_3}$ was studied by photoelectron spectroscopy. The energy distribution of the $\mathrm{Ce}~4f$ states were revealed by the $\mathrm{Ce}~3d-4f$ resonant photoelectron spectroscopy. The $\mathrm{Ce}~4f$ states were mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the $\mathrm{Ce}~4f$ states. The contribution of the $\mathrm{Ce}~4f$ states to the density of states (DOS) at the Fermi energy was estimated to be nearly half of that of the $\mathrm{Ir}~5d$ states, implying that the $\mathrm{Ce}~4f$ states have a considerable contribution to the DOS at the Fermi energy. The $\mathrm{Ce}~3d$ core-level and $\mathrm{Ce}~3d$ X-ray absorption spectra were analyzed based on a single-impurity Anderson model. The number of the $\mathrm{Ce}~4f$ states in the ground state was estimated to be $0.8-0.9$, which is much larger than the values obtained in the previous studies (i.e., $0-0.4$). △ Less

Submitted 6 November, 2023; originally announced November 2023.

Comments: 9 pages, 4 figures, accepted to Electronic Structure

Journal ref: Electronic Structure 5, 045009 (2023)

Enhanced $d$-$p$ hybridization intertwined with anomalous ground state formation in van der Waals-coupled magnetic metal Fe$_5$GeTe$_2$

Authors: K. Yamagami, Y. Fujisawa, M. Pardo-Almanza, B. R. M. Smith, K. Sumida, Y. Takeda, Y. Okada

Abstract: Fe$_5$GeTe$_2$ is a van der Waals (vdW)-coupled unconventional ferromagnetic metal with a high Curie temperature ($T_C$) exceeding 300 K. The formation of an anomalous ground state significantly below $T_C$ has received considerable attention, resulting in increased interest in understanding the spin-polarized electronic state evolution near the Fermi energy ($E_F$) as a function of temperature. D… ▽ More Fe$_5$GeTe$_2$ is a van der Waals (vdW)-coupled unconventional ferromagnetic metal with a high Curie temperature ($T_C$) exceeding 300 K. The formation of an anomalous ground state significantly below $T_C$ has received considerable attention, resulting in increased interest in understanding the spin-polarized electronic state evolution near the Fermi energy ($E_F$) as a function of temperature. Despite recent extensive studies, a microscopic understanding of the spin-polarized electronic structure around $E_F$ has not yet been established owing to the intrinsic complexity of both the crystal and band structures. In this study, we investigate the temperature dependence of element-specific soft X-ray magnetic circular dichroism (XMCD). A systematic temperature evolution in the XMCD signal from both magnetic Fe and its ligand Te is clearly observed. More importantly, the enhancement in the hybridization between the Fe 3$d$ and Te 5$p$ states in the zero-magnetic field limit is revealed, and we discuss its implications on the possible emergence of an exotic magnetic ground state in Fe$_5$GeTe$_2$. △ Less

Submitted 16 May, 2022; originally announced May 2022.

Comments: 12 pages, 4 figures

Isotropic orbital magnetic moments in magnetically anisotropic SrRuO3 films

Authors: Yuki K. Wakabayashi, Masaki Kobayashi, Yukiharu Takeda, Miho Kitamura, Takahito Takeda, Ryo Okano, Yoshiharu Krockenberger, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic… ▽ More Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The magnetization curves for the Ru 4d and O 2p magnetic moments are identical, irrespective of the strain type, indicating the strong magnetic coupling between the Ru and O ions. The electronic structure and the orbital magnetic moment relative to the spin magnetic moment are isotropic despite the perpendicular and in-plane magnetic anisotropy in the compressive-strained and tensile-strained SrRuO3 films; i.e., the orbital magnetic moments have a negligibly small contribution to the magnetic anisotropy. This result contradicts Bruno model, where magnetic anisotropy arises from the difference in the orbital magnetic moment between the perpendicular and in-plane directions. Contributions of strain-induced electric quadrupole moments to the magnetic anisotropy are discussed, too. △ Less

Submitted 13 May, 2022; originally announced May 2022.

Electronic Structure of ThPd$_2$Al$_3$: an impact of the U $5f$ states in the electronic structure of UPd$_2$Al$_3$

Authors: Shin-ichi Fujimori, Yukiharu Takeda, Hiroshi Yamagami, Jiří Pospíšil, Etsuji Yamamoto, Yoshinori Haga

Abstract: The electronic structure of ThPd$_2$Al$_3$, which is isostructural to the heavy fermion superconductor UPd$_2$Al$_3$, was investigated by photoelectron spectroscopy. The band structure and Fermi surfaces of ThPd$_2$Al$_3$ were obtained by angle-resolved photoelectron spectroscopy (ARPES), and the results were well-explained by the band-structure calculation based on the local density approximation… ▽ More The electronic structure of ThPd$_2$Al$_3$, which is isostructural to the heavy fermion superconductor UPd$_2$Al$_3$, was investigated by photoelectron spectroscopy. The band structure and Fermi surfaces of ThPd$_2$Al$_3$ were obtained by angle-resolved photoelectron spectroscopy (ARPES), and the results were well-explained by the band-structure calculation based on the local density approximation. The comparison between the ARPES spectra and the band-structure calculation suggests that the Fermi surface of ThPd$_2$Al$_3$ mainly consists of the Al $3p$ and Th $6d$ states with a minor contribution from the Pd $4d$ states. The comparison of the band structures between ThPd$_2$Al$_3$ and UPd$_2$Al$_3$ argues that the U $5f$ states form Fermi surfaces in UPd$_2$Al$_3$ through hybridization with the Al $3p$ state in the Al layer, suggesting that the Fermi surface of UPd$_2$Al$_3$ has a strong three-dimensional nature. △ Less

Submitted 7 March, 2022; originally announced March 2022.

Comments: accepted to Phys. Rev. B

Ferromagnetism induced by hybridization of Fe 3d orbitals with ligand InSb bands in n-type ferromagnetic semiconductor (In,Fe)Sb

Authors: Ryo Okano, Tomoki Hotta, Takahito Takeda, Kohsei Araki, Kengo Takase, Le Duc Anh, Shoya Sakamoto, Yukiharu Takeda, Atsushi Fujimori, Masaaki Tanaka, Masaki Kobayashi

Abstract: Fe-doped III-V ferromagnetic semiconductor (FMS) (In,Fe)Sb is a promising material for spintronic device applications because of the n-type carrier conduction and the ferromagnetism with high Curie temperature (TC > 300 K). To clarify the mechanism of the high-TC ferromagnetism, we have investigated the electronic structure and magnetic properties of an (In,Fe)Sb thin film by performing x-ray abso… ▽ More Fe-doped III-V ferromagnetic semiconductor (FMS) (In,Fe)Sb is a promising material for spintronic device applications because of the n-type carrier conduction and the ferromagnetism with high Curie temperature (TC > 300 K). To clarify the mechanism of the high-TC ferromagnetism, we have investigated the electronic structure and magnetic properties of an (In,Fe)Sb thin film by performing x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Fe L2,3 edges. The magnetic-field dependence of the XMCD spectra reveals that there are ferromagnetic-like Fe and paramagnetic-like Fe components in the (In,Fe)Sb thin film. The XAS and XMCD spectra of the ferromagnetic-like and paramagnetic-like Fe components resemble those of other Fe-doped FMSs and extrinsic oxides, respectively. The finite value of the ratio between the orbital and spin magnetic moments estimated by applying the XMCD sum rules indicates that the valence state of the Fe ions substituting for the In sites in (In,Fe)Sb is not purely ionic Fe3+, but intermediate between Fe3+ and Fe2+. The qualitative correspondence between the magnetic-field dependence of the visible-light magnetic circular dichroism intensity and that of the XMCD intensity demonstrates that the Zeeman splitting of the InSb band is proportional to the net magnetization of the doped Fe. These results suggest that the ferromagnetism of (In,Fe)Sb originates from the Fe 3d orbitals hybridized with the host InSb bands. △ Less

Submitted 9 February, 2022; originally announced February 2022.

Comments: 24 pages, 4 figures

Magnetic anisotropy of the van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ studied by angular-dependent XMCD

Authors: M. Suzuki, B. Gao, G. Shibata, S. Sakamoto, Y. Nonaka, K. Ikeda, Z. Chi, Y. -X. Wan, T. Takeda, Y. Takeda, T. Koide, A. Tanaka, M. Kobayashi, S. -W. Cheong, A. Fujimori

Abstract: The van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ (CGT) has a two-dimensional crystal structure where each layer is stacked through van der Waals force. We have investigated the nature of the ferromagnetism and the weak perpendicular magnetic anisotropy (PMA) of CGT by means of X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of CGT single crystals. The XMCD spectr… ▽ More The van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ (CGT) has a two-dimensional crystal structure where each layer is stacked through van der Waals force. We have investigated the nature of the ferromagnetism and the weak perpendicular magnetic anisotropy (PMA) of CGT by means of X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of CGT single crystals. The XMCD spectra at the Cr $L_{2,3}$ edge for different magnetic field directions were analyzed on the basis of the cluster-model multiplet calculation. The Cr valence is confirmed to be 3+ and the orbital magnetic moment is found to be nearly quenched, as expected for the high-spin $t_{2g}$$^3$ configuration of the Cr$^{3+}$ ion. A large ($\sim 0.2$ eV) trigonal crystal-field splitting of the $t_{2g}$ level caused by the distortion of the CrTe$_6$ octahedron has been revealed, while the single-ion anisotropy (SIA) of the Cr atom is found to have a sign {\it opposite} to the observed PMA and too weak compared to the reported anisotropy energy. The present result suggests that anisotropic exchange coupling between the Cr atoms through the ligand Te $5p$ orbitals having strong spin-orbit coupling has to be invoked to explain the weak PMA of CGT, as in the case of the strong PMA of CrI$_3$. △ Less

Submitted 13 September, 2021; originally announced September 2021.

Comments: 17 pages, 5 figures

Journal ref: Phys. Rev. Research 4, 013139 (2022)

Magnetoelastic anisotropy in Heusler-type Mn$_{2-δ}$CoGa$_{1+δ}$ films

Authors: Takahide Kubota, Daichi Takano, Yohei Kota, Shaktiranjan Mohanty, Keita Ito, Mitsuhiro Matsuki, Masahiro Hayashida, Mingling Sun, Yukiharu Takeda, Yuji Saitoh, Subhankar Bedanta, Akio Kimura, Koki Takanashi

Abstract: Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport phenomena. Heusler alloy is a well-known material class showing the half-metallic electronic structure. However, its cubic lattice nature favors in-plane magnetizatio… ▽ More Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport phenomena. Heusler alloy is a well-known material class showing the half-metallic electronic structure. However, its cubic lattice nature favors in-plane magnetization and thus minimizes the perpendicular magnetic anisotropy (PMA), in general. This study focuses on an inverse-type Heusler alloy, Mn$_{2-δ}$CoGa$_{1+δ}$ (MCG) with a small off-stoichiometry ($δ$) , which is expected to be a half-metallic material. We observed relatively large uniaxial magnetocrystalline anisotropy constant ($K_\mathrm{u}$) of the order of 10$^5$ J/m$^3$ at room temperature in MCG films with a small tetragonal distortion of a few percent. A positive correlation was confirmed between the $c/a$ ratio of lattice constants and $K_\mathrm{u}$. Imaging of magnetic domains using Kerr microscopy clearly demonstrated a change in the domain patterns along with $K_\mathrm{u}$. X-ray magnetic circular dichroism (XMCD) was employed using synchrotron radiation soft x-ray beam to get insight into the origin for PMA. Negligible angular variation of orbital magnetic moment ($Δm_\mathrm{orb}$) evaluated using the XMCD spectra suggested a minor role of the so-called Bruno's term to $K_\mathrm{u}$. Our first principles calculation reasonably explained the small $Δm_\mathrm{orb}$ and the positive correlation between the $c/a$ ratio and $K_\mathrm{u}$. The origin of the magnetocrystalline anisotropy was discussed based on the second-order perturbation theory in terms of the spin--orbit coupling, claiming that the mixing of the occupied $\uparrow$- and the unoccupied $\downarrow$-spin states is responsible for the PMA of the MCG films. △ Less

Submitted 5 March, 2022; v1 submitted 25 August, 2021; originally announced August 2021.

Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As

Authors: Takahito Takeda, Shoya Sakamoto, Le Duc Anh, Yukiharu Takeda, Shin-ichi Fujimori, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Atsushi Fujimori, Masaaki Tanaka, Masaki Kobayashi

Abstract: Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of… ▽ More Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular dichroism (XMCD) to investigate the electronic and magnetic properties of the Fe ions in a paramagnetic (Ga$_{0.95}$,Fe$_{0.05}$)As thin film. The observed Fe 2$p$-3$d$ RPES spectra show that the Fe 3$d$ states are similar to those of ferromagnetic (Ga,Fe)Sb. The estimated Fermi level is located in the middle of the band gap in (Ga,Fe)As. The Fe $L_{2,3}$ XMCD spectra of (Ga$_{0.95}$,Fe$_{0.05}$)As show pre-edge structures, which are not observed in the Fe-doped FMSs, indicating that the minority-spin ($\downarrow$) $e_\downarrow$ states are vacant in (Ga$_{0.95}$,Fe$_{0.05}$)As. The XMCD results suggest that the carrier-induced ferromagnetic interaction in (Ga$_{0.95}$,Fe$_{0.05}$)As is short-ranged and weaker than that in the Fe-doped FMSs. The experimental findings suggest that the electron occupancy of the $e_\downarrow$ states contributes to the appearance of ferromagnetism in the Fe-doped III-V semiconductors, for p-type as well as n-type compounds. △ Less

Submitted 19 August, 2021; originally announced August 2021.

Single-domain perpendicular magnetization induced by the coherent O 2p-Ru 4d hybridized state in an ultra-high-quality SrRuO3 film

Authors: Yuki K. Wakabayashi, Masaki Kobayashi, Yukiharu Takeda, Kosuke Takiguchi, Hiroshi Irie, Shin-ichi Fujimori, Takahito Takeda, Ryo Okano, Yoshiharu Krockenberger, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: We investigated the Ru 4d and O 2p electronic structure and magnetic properties of an ultra-high-quality SrRuO3 film on SrTiO3 grown by machine-learning-assisted molecular beam epitaxy. The high itinerancy and long quantum lifetimes of the quasiparticles in the Ru 4d t2g-O 2p hybridized valence band are confirmed by observing the prominent well-screened peak in the Ru 3d core-level photoemission s… ▽ More We investigated the Ru 4d and O 2p electronic structure and magnetic properties of an ultra-high-quality SrRuO3 film on SrTiO3 grown by machine-learning-assisted molecular beam epitaxy. The high itinerancy and long quantum lifetimes of the quasiparticles in the Ru 4d t2g-O 2p hybridized valence band are confirmed by observing the prominent well-screened peak in the Ru 3d core-level photoemission spectrum, the coherent peak near the Fermi energy in the valence band spectrum, and quantum oscillations in the resistivity. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The ultra-high-quality SrRuO3 film with the residual resistivity ratio of 86 shows the large orbital magnetic moment of oxygen ions induced by the strong orbital hybridization of the O 2p states with the spin-polarized Ru 4d t2g states. The film also shows single-domain perpendicular magnetization with an almost ideal remanent magnetization ratio of 0.97. These results provide detailed insights into the relevance between orbital hybridization and the perpendicular magnetic anisotropy in SrRuO3/SrTiO3 systems. △ Less

Submitted 10 August, 2021; originally announced August 2021.

Electronic structure of URu$_2$Si$_2$ in paramagnetic phase: Three-dimensional angle resolved photoelectron spectroscopy study

Authors: Shin-ichi Fujimori, Yukiharu Takeda, Hiroshi Yamagami, Etsuji Yamamoto, Yoshinori Haga

Abstract: The three-dimensional (3D) electronic structure of the hidden order compound URu$_2$Si$_2$ in a paramagnetic phase was revealed using a 3D angle-resolved photoelectron spectroscopy where the electronic structure of the entire Brillouin zone is obtained by scanning both incident photon energy and detection angles of photoelectrons. The quasi-particle bands with enhanced contribution from the… ▽ More The three-dimensional (3D) electronic structure of the hidden order compound URu$_2$Si$_2$ in a paramagnetic phase was revealed using a 3D angle-resolved photoelectron spectroscopy where the electronic structure of the entire Brillouin zone is obtained by scanning both incident photon energy and detection angles of photoelectrons. The quasi-particle bands with enhanced contribution from the $\mathrm{U}~5f$ state were observed near $E_\mathrm{F}$, formed by the hybridization with the $\mathrm{Ru}~4d$ states. The energy dispersion of the quasi-particle band is significantly depend on $k_z$, indicating that they inherently have a 3D nature. The band-structure calculation qualitatively explain the characteristic features of the band structure and Fermi surface although the electron correlation effect strongly renormalizes the quasi-particle bands. The 3D and strongly-correlated nature of the quasi-particle bands in URu$_2$Si$_2$ is an essential ingredient for modeling its hidden-order transition. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Comments: 13 pages, 4 figures, submitted to Focus on Electronic Structure of $4f$ and $5f$ Systems, Electronic Structure (https://iopscience.iop.org/journal/2516-1075/page/focus-on-electronic-structure-of-4f-and-5f-systems)

Itinerant ferromagnetism mediated by giant spin polarization of metallic ligand band in van der Waals magnet Fe5GeTe2

Authors: K. Yamagami, Y. Fujisawa, B. Driesen, C. H. Hsu, K. Kawaguchi, H. Tanaka, T. Kondo, Y. Zhang, H. Wadati, K. Araki, T. Takeda, Y. Takeda, T. Muro, F. C. Chuang, Y. Niimi, K. Kuroda, M. Kobayashi, Y. Okada

Abstract: We investigate near-Fermi-energy (EF) element-specific electronic and spin states of ferromagnetic van der Waals (vdW) metal Fe5GeTe2. The soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurement provides spectroscopic evidence of localized Fe 3d band. We also find prominent hybridization between the localized Fe 3d band and the delocalized Ge/Te p bands. This picture is strongl… ▽ More We investigate near-Fermi-energy (EF) element-specific electronic and spin states of ferromagnetic van der Waals (vdW) metal Fe5GeTe2. The soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurement provides spectroscopic evidence of localized Fe 3d band. We also find prominent hybridization between the localized Fe 3d band and the delocalized Ge/Te p bands. This picture is strongly supported from direct observation of the remarkable spin polarization of the ligand p bands near EF, using x-ray magnetic circular dichroism (XMCD) measurements. The strength of XMCD signal from ligand element Te shows the highest value, as far as we recognize, among literature reporting finite XMCD signal for none-magnetic element in any systems. Combining SX-ARPES and elemental selective XMCD measurements, we collectively point an important role of giant spin polarization of the delocalized ligand Te states for realizing itinerant long-range ferromagnetism in Fe5GeTe2. Our finding provides a fundamental elemental selective view-point for understanding mechanism of itinerant ferromagnetism in low dimensional compounds, which also leads insight for designing exotic magnetic states by interfacial band engineering in heterostructures. △ Less

Submitted 4 January, 2021; originally announced January 2021.

Journal ref: Phys. Rev. B 103, 060403 (2021)

Core-Level Photoelectron Spectroscopy Study of UTe$_2$

Authors: Shin-ichi Fujimori, Ikuto Kawasaki, Yukiharu Takeda, Hiroshi Yamagami, Ai Nakamura, Yoshiya Homma, Dai Aoki

Abstract: The valence state of UTe$_2$ was studied by core-level photoelectron spectroscopy. The main peak position of the U $4f$ core-level spectrum of UTe$_2$ coincides with that of UB$_2$, which is an itinerant compound with a nearly $5f^3$ configuration. However, the main peak of UTe$_2$ is broader than that of UB$_2$, and satellite structures are observed in the higher binding energy side of the main p… ▽ More The valence state of UTe$_2$ was studied by core-level photoelectron spectroscopy. The main peak position of the U $4f$ core-level spectrum of UTe$_2$ coincides with that of UB$_2$, which is an itinerant compound with a nearly $5f^3$ configuration. However, the main peak of UTe$_2$ is broader than that of UB$_2$, and satellite structures are observed in the higher binding energy side of the main peak, which are characteristics of mixed-valence uranium compounds. These results suggest that the U 5$f$ state in UTe$_2$ is in a mixed valence state with a dominant contribution from the itinerant $5f^3$ configuration. △ Less

Submitted 7 December, 2020; originally announced December 2020.

Comments: accepted to J. Phys. Soc. Jpn. (2021)

Journal ref: J. Phys. Soc. Jpn. 90, 015002 (2021)

Alternation of Magnetic Anisotropy Accompanied by Metal-Insulator Transition in Strained Ultrathin Manganite Heterostructures

Authors: Masaki Kobayashi, Le Duc Anh, Masahiro Suzuki, Shingo Kaneta-Takada, Yukiharu Takeda, Shin-ichi Fujimori, Masaaki Tanaka, Shinobu Ohya, Atsushi Fujimori

Abstract: Fundamental understanding of interfacial magnetic properties in ferromagnetic heterostructures is essential to utilize ferromagnetic materials for spintronic device applications. In this paper, we investigate the interfacial magnetic and electronic structures of epitaxial single-crystalline LaAlO$_3$ (LAO)/La$_{0.6}$Sr$_{0.4}$MnO$_3$ (LSMO)/Nb:SrTiO$_3$ (Nb:STO) heterostructures with varying LSMO-… ▽ More Fundamental understanding of interfacial magnetic properties in ferromagnetic heterostructures is essential to utilize ferromagnetic materials for spintronic device applications. In this paper, we investigate the interfacial magnetic and electronic structures of epitaxial single-crystalline LaAlO$_3$ (LAO)/La$_{0.6}$Sr$_{0.4}$MnO$_3$ (LSMO)/Nb:SrTiO$_3$ (Nb:STO) heterostructures with varying LSMO-layer thickness, in which the magnetic anisotropy strongly changes depending on the LSMO thickness due to the delicate balance between the strains originating from both the Nb:STO and LAO layers, using x-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). We successfully detect the clear change of the magnetic behavior of the Mn ions concomitant with the thickness-dependent metal-insulator transition (MIT). Our results suggest that double-exchange interaction induces the ferromagnetism in the metallic LSMO film under tensile strain caused by the SrTiO$_3$ substrate, while superexchange interaction determines the magnetic behavior in the insulating LSMO film under compressive strain originating from the top LAO layer. Based on those findings, the formation of a magnetic dead layer near the LAO/LSMO interface is attributed to competition between the superexchange interaction via Mn 3$d_{3z^2-r^2}$ orbitals under compressive strain and the double-exchange interaction via the 3$d_{x^2-y^2}$ orbitals. △ Less

Submitted 19 November, 2020; v1 submitted 25 September, 2020; originally announced September 2020.

Comments: 20 pages, 6 figures

Journal ref: Phys. Rev. Applied 15, 064019 (2021)

Evolution of the Fe-3$d$ impurity band state as the origin of high Curie temperature in p-type ferromagnetic semiconductor (Ga,Fe)Sb

Authors: Takahito Takeda, Shoya Sakamoto, Kohsei Araki, Yuita Fujisawa, Le Duc Anh, Nguyen Thanh Tu, Yukiharu Takeda, Shin-ichi Fujimori, Atsushi Fujimori, Masaaki Tanaka, Masaki Kobayashi

Abstract: (Ga$_{1-x}$,Fe$_x$)Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature ($T_{\rm C}$) is above 300 K when the Fe concentration $x$ is equal to or higher than ~0.20. However, the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-p… ▽ More (Ga$_{1-x}$,Fe$_x$)Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature ($T_{\rm C}$) is above 300 K when the Fe concentration $x$ is equal to or higher than ~0.20. However, the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-principles calculations to investigate the $x$ dependence of the Fe 3$d$ states in (Ga$_{1-x}$,Fe$_x$)Sb ($x$ = 0.05, 0.15, and 0.25) thin films. The observed Fe 2$p$-3$d$ RPES spectra reveal that the Fe-3$d$ impurity band (IB) crossing the Fermi level becomes broader with increasing $x$, which is qualitatively consistent with the picture of double-exchange interaction. Comparison between the obtained Fe-3$d$ partial density of states and the first-principles calculations suggests that the Fe-3$d$ IB originates from the minority-spin ($\downarrow$) $e$ states. The results indicate that enhancement of the interaction between $e_\downarrow$ electrons with increasing $x$ is the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb. △ Less

Submitted 18 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. B 102, 245203 (2020)

Tailoring Magnetism in Self-intercalated Cr1+δTe2 Epitaxial Films

Authors: Y. Fujisawa, M. Pardo-Almanza, J. Garland, K. Yamagami, X. Zhu, X. Chen, K. Araki, T. Takeda, M. Kobayashi, Y. Takeda, C. H. Hsu, F. C. Chuang, R. Laskowski, K. H. Khoo, A. Soumyanarayanan, Y. Okada

Abstract: Magnetic transition metal dichalcogenide (TMD) films have recently emerged as promising candidates to host novel magnetic phases relevant to next-generation spintronic devices. However, systematic control of the magnetization orientation, or anisotropy, and its thermal stability, characterized by Curie temperature (Tc) remains to be achieved in such films. Here we present self-intercalated epitaxi… ▽ More Magnetic transition metal dichalcogenide (TMD) films have recently emerged as promising candidates to host novel magnetic phases relevant to next-generation spintronic devices. However, systematic control of the magnetization orientation, or anisotropy, and its thermal stability, characterized by Curie temperature (Tc) remains to be achieved in such films. Here we present self-intercalated epitaxial Cr1+δTe2 films as a platform for achieving systematic/smooth magnetic tailoring in TMD films. Using a molecular beam epitaxy (MBE) based technique, we have realized epitaxial Cr1+δTe2 films with smoothly tunable over a wide range (0.33-0.82), while maintaining NiAs-type crystal structure. With increasing δ, we found monotonic enhancement of Tc from 160 to 350 K, and the rotation of magnetic anisotropy from out-of-plane to in-plane easy axis configuration for fixed film thickness. Contributions from conventional dipolar and orbital moment terms are insufficient to explain the observed evolution of magnetic behavior with δ. Instead, ab initio calculations suggest that the emergence of antiferromagnetic interactions with δ, and its interplay with conventional ferromagnetism, may play a key role in the observed trends. To our knowledge, this constitutes the first demonstration of tunable Tc and magnetic anisotropy across room temperature in TMD films, and paves the way for engineering novel magnetic phases for spintronic applications. △ Less

Submitted 1 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. Materials 4, 114001 (2020)

Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi$_2$Te$_4$

Authors: A. M. Shikin, D. A. Estyunin, I. I. Klimovskikh, S. O. Filnov, E. F. Schwier, S. Kumar, K. Myamoto, T. Okuda, A. Kimura, K. Kuroda, K. Yaji, S. Shin, Y. Takeda, Y. Saitoh, Z. S. Aliev, N. T. Mamedov, I. R. Amiraslanov, M. B. Babanly, M. M. Otrokov, S. V. Eremeev, E. V. Chulkov

Abstract: Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (1… ▽ More Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the Néel temperature ($T_\mathrm{N}=24.5$~K). We propose that the gap above $T_\mathrm{N}$ remains open due to short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for large-gap sample and significantly reduced effective magnetic moment for the reduced-gap sample. These effects can be associated with a shift of the topological DC state towards the second Mn layer due to structural defects and mechanical disturbance, where it is influenced by a compensated effect of opposite magnetic moments. △ Less

Submitted 9 April, 2020; originally announced April 2020.

Hybridization between the ligand $p$ band and Fe-3$d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb

Authors: Takahito Takeda, Masahiro Suzuki, Le Duc Anh, Nguyen Thanh Tu, Thorsten Schmitt, Satoshi Yoshida, Masato Sakano, Kyoko Ishizaka, Yukiharu Takeda, Shin-ichi Fijimori, Munetoshi Seki, Hitoshi Tabata, Atsushi Fujimori, Vladimir N. Strocov, Masaaki Tanaka, Masaki Kobayashi

Abstract: (Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe… ▽ More (Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb including the Fe-3$d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in (Ga$_{0.95}$,Fe$_{0.05}$)Sb observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The Fe-3$d$ resonant ARPES spectra demonstrate that the Fe-3$d$ IB crosses the Fermi level ($E_{\rm F}$) and hybridizes with the VB of GaSb. These observations indicate that the VB structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb is consistent with that of the IB model which is based on double-exchange interaction between the localized 3$d$ electrons of the magnetic impurities. The results indicate that the ferromagnetism in (Ga,Fe)Sb is formed by the hybridization of the Fe-3$d$ IB with the ligand $p$ band of GaSb. △ Less

Submitted 9 January, 2020; originally announced January 2020.

Comments: 24 pages, 6 figures

Journal ref: Phys. Rev. B 101, 155142 (2020)

Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films

Authors: Masaki Nakano, Yue Wang, Satoshi Yoshida, Hideki Matsuoka, Yuki Majima, Keisuke Ikeda, Yasuyuki Hirata, Yukiharu Takeda, Hiroki Wadati, Yoshimitsu Kohama, Yuta Ohigashi, Masato Sakano, Kyoko Ishizaka, Yoshihiro Iwasa

Abstract: The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals… ▽ More The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals crystals, while bottom-up approach by thin film growth technique has demonstrated emergent 2D ferromagnetism in a variety of 'originally non-FM' van der Waals materials. Here we demonstrate that V5Se8 epitaxial thin films grown by molecular-beam epitaxy (MBE) exhibit emergent 2D ferromagnetism with intrinsic spin polarization of the V 3d electrons despite that the bulk counterpart is 'originally antiferromagnetic (AFM)'. Moreover, thickness-dependence measurements reveal that this newly-developed 2D ferromagnet could be classified as an itinerant 2D Heisenberg ferromagnet with weak magnetic anisotropy, broadening a lineup of 2D magnets to those potentially beneficial for future spintronics applications. △ Less

Submitted 4 October, 2019; originally announced October 2019.

Electronic Structure of UTe$_2$ Studied by Photoelectron Spectroscopy

Authors: Shin-ichi Fujimori, Ikuto Kawasaki, Yukiharu Takeda, Hiroshi Yamagami, Ai Nakamura, Yoshiya Homma, Dai Aoki

Abstract: The electronic structure of the unconventional superconductor UTe$_2$ was studied by resonant photoelectron spectroscopy (RPES) and angle-resolved photoelectron spectroscopy (ARPES) with soft X-ray synchrotron radiation. The partial $\mathrm{U}~5f$ density of states of UTe$_2$ were imaged by the $\mathrm{U}~4d$--$5f$ RPES and it was found that the $\mathrm{U}~5f$ state has an itinerant character,… ▽ More The electronic structure of the unconventional superconductor UTe$_2$ was studied by resonant photoelectron spectroscopy (RPES) and angle-resolved photoelectron spectroscopy (ARPES) with soft X-ray synchrotron radiation. The partial $\mathrm{U}~5f$ density of states of UTe$_2$ were imaged by the $\mathrm{U}~4d$--$5f$ RPES and it was found that the $\mathrm{U}~5f$ state has an itinerant character, but there exists an incoherent peak due to the strong electron correlation effects. Furthermore, an anomalous admixture of the $\mathrm{U}~5f$ states into the $\mathrm{Te}~5p$ bands was observed at a higher binding energy, which cannot be explained by band structure calculations. On the other hand, the band structure of UTe$_2$ was obtained by ARPES and its overall band structure were mostly explained by band structure calculations. These results suggest that the $\mathrm{U}~5f$ states of UTe$_2$ have itinerant but strongly-correlated nature with enhanced hybridization with the $\mathrm{Te}~5p$ states. △ Less

Submitted 11 September, 2019; v1 submitted 25 August, 2019; originally announced August 2019.

Comments: 5 pages, 7 figures

Journal ref: J. Phys. Soc. Jpn. 88, 103701 (2019)

Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb

Authors: Shoya Sakamoto, Le Duc Anh, Pham Nam Hai, Yukiharu Takeda, Masaki Kobayashi, Yuki K. Wakabayashi, Yosuke Nonaka, Keisuke Ikeda, Zhendong Chi, Yuxuan Wan, Masahiro Suzuki, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori

Abstract: We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the ex… ▽ More We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the existence of nanoscale Fe-rich ferromagnetic domains acting as superparamagnets. By fitting the magnetization curves using the Langevin function representing superparamagnetism plus the paramagnetic linear function, we estimated the average magnetic moment of the nanoscale ferromagnetic domain to be 300-400 $μ_{B}$, and the fraction of Fe atoms participating in the nano-scale ferromagnetism to be $\sim$50%. Such behavior was also reported for (In,Fe)As:Be and Ge:Fe, and seems to be a universal characteristic of the Fe-doped ferromagnetic semiconductors. Further Fe doping up to 14% led to the weakening of the ferromagnetism probably because antiferromagnetic superexchange interaction between nearest-neighbor Fe-Fe pairs becomes dominant. △ Less

Submitted 11 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. B 101, 075204 (2020)

Manifestation of electron correlation effect in $\mathrm{U}~5f$ states of uranium compounds revealed by $\mathrm{U}~4d-5f$ resonant photoemission spectroscopy

Authors: Shin-ichi Fujimori, Masaharu Kobata, Yukiharu Takeda, Tetsuo Okane, Yuji Saitoh, Atsushi Fujimori, Hiroshi Yamagami, Yoshinori Haga, Etsuji Yamamoto, Yoshichika Onuki

Abstract: We have elucidated the nature of the electron correlation effect in uranium compounds by imaging the partial $\mathrm{U}~5f$ density of states (pDOS) of typical itinerant, localized, and heavy fermion uranium compounds by using the $\mathrm{U}~4d-5f$ resonant photoemission spectroscopy. Obtained $\mathrm{U}~5f$ pDOS exhibit a systematic trend depending on the physical properties of compounds. The… ▽ More We have elucidated the nature of the electron correlation effect in uranium compounds by imaging the partial $\mathrm{U}~5f$ density of states (pDOS) of typical itinerant, localized, and heavy fermion uranium compounds by using the $\mathrm{U}~4d-5f$ resonant photoemission spectroscopy. Obtained $\mathrm{U}~5f$ pDOS exhibit a systematic trend depending on the physical properties of compounds. The coherent peak at the Fermi level can be described by the band-structure calculation, but an incoherent peak emerges on the higher binding energy side ($\lesssim 1~\mathrm{eV}$) in the \Uf pDOS of localized and heavy fermion compounds. As the $\mathrm{U}~5f$ state is more localized, the intensity of the incoherent peak is enhanced and its energy position is shifted to higher binding energy. These behaviors are consistent with the prediction of the Mott metal-insulator transition, suggesting that the Hubbard-$U$ type mechanism takes an essential role in the $5f$ electronic structure of actinide materials. △ Less

Submitted 3 January, 2019; originally announced January 2019.

Comments: Accepted to PRB Dec. 22, 2018

Journal ref: Phys. Rev. B 99, 035109 (2019)

Electronic structure of the novel high-$T_{\rm C}$ ferromagnetic semiconductor (Ga,Fe)Sb: x-ray magnetic circular dichroism and resonance photoemission spectroscopy studies

Authors: Shoya Sakamoto, Nguyen Thanh Tu, Yukiharu Takeda, Shin-ichi Fujimori, Pham Nam Hai, Le Duc Anh, Yuki K. Wakabayashi, Goro Shibata, Masafumi Horio, Keisuke Ikeda, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori

Abstract: The electronic structure and the magnetism of the novel ferromagnetic semiconductor (Ga,Fe)Sb, whose Curie temperature $T_{\rm C}$ can exceed room temperature, were investigated by means of x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and resonance photoemission spectroscopy (RPES). The line-shape analyses of the XAS and XMCD spectra suggest that the ferromagnetis… ▽ More The electronic structure and the magnetism of the novel ferromagnetic semiconductor (Ga,Fe)Sb, whose Curie temperature $T_{\rm C}$ can exceed room temperature, were investigated by means of x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and resonance photoemission spectroscopy (RPES). The line-shape analyses of the XAS and XMCD spectra suggest that the ferromagnetism is of intrinsic origin. The orbital magnetic moments deduced using XMCD sum rules were found to be large, indicating that there is a considerable amount of 3$d^{6}$ contribution to the ground state of Fe. From RPES, we observed a strong dispersive Auger peak and non-dispersive resonantly enhanced peaks in the valence-band spectra. The latter is a fingerprint of the correlated nature of Fe 3$d$ electrons, whereas the former indicates their itinerant nature. It was also found that the Fe 3$d$ states have finite contribution to the DOS at the Fermi energy. These states presumably consisting of majority-spin $p$-$d$ hybridized states or minority-spin $e$ states would be responsible for the ferromagnetic order in this material. △ Less

Submitted 18 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 100, 035204 (2019)

Local Magnetic States of the Weakly Ferromagnetic Iron-Based Superconductor Sr$_2$VFeAsO$_{3-δ}$ Studied by X-ray Magnetic Circular Dichroism

Authors: Masafumi Horio, Yukiharu Takeda, Hiromasa Namiki, Takao Katagiri, Yuki K. Wakabayashi, Shoya Sakamoto, Yosuke Nonaka, Goro Shibata, Keisuke Ikeda, Yuji Saitoh, Hiroshi Yamagami, Takao Sasagawa, Atsushi Fujimori

Abstract: We have performed x-ray magnetic circular dichroism (XMCD) measurements on the iron-based superconductor Sr$_2$VFeAsO$_{3-δ}$ to study the origin of weak ferromagnetism (WFM) reported for this compound. While Fe 3$d$ electrons show a magnetic response similar to the other iron pnictides, signals from V 3$d$ electrons remain finite at zero magnetic field and may be responsible for the WFM. We have performed x-ray magnetic circular dichroism (XMCD) measurements on the iron-based superconductor Sr$_2$VFeAsO$_{3-δ}$ to study the origin of weak ferromagnetism (WFM) reported for this compound. While Fe 3$d$ electrons show a magnetic response similar to the other iron pnictides, signals from V 3$d$ electrons remain finite at zero magnetic field and may be responsible for the WFM. △ Less

Submitted 5 September, 2018; v1 submitted 16 August, 2018; originally announced August 2018.

Journal ref: J. Phys. Soc. Jpn. 87, 105001 (2018)

Systematic study of the electronic structure and the magnetic properties of a few-nm-thick epitaxial (Ni1-xCox)Fe2O4 (x = 0 - 1) layers grown on Al2O3(111)/Si(111) using soft X-ray magnetic circular dichroism: effects of cation distribution

Authors: Yuki K. Wakabayashi, Yosuke Nonaka, Yukiharu Takeda, Shoya Sakamoto, Keisuke Ikeda, Zhendong Chi, Goro Shibata, Arata Tanaka, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori, Ryosho Nakane

Abstract: We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling… ▽ More We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling as a spin filter. We revealed the crystallographic (octahedral Oh or tetrahedral Td) sites and the valences of the Fe, Co, and Ni cations using experimental soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism spectra and configuration-interaction cluster-model calculation. In all the (Ni1-xCox)Fe2O4 layers with d = about 4 nm, all Ni cations occupy the Ni2+ (Oh) site, whereas Co cations occupy the three different Co2+ (Oh), Co2+ (Td), and Co3+ (Oh) sites with constant occupancies. According to these features, the occupancy of the Fe3+ (Oh) cations decreases and that of the Fe3+ (Td) cations increases with decreasing x. Consequently, we obtained a systematic increase of y with decreasing x and achieved the highest y value of 0.91 for the NiFe2O4 layer with d = 3.5 nm. From the d dependences of y and magnetization in the d range of 1.7 - 5.2 nm, a magnetically dead layer is present near the NiFe2O4/Al2O3 interface, but its influence on the magnetization was significantly suppressed compared with the case of CoFe2O4 layers reported previously [Y. K. Wakabayasi et al., Phys. Rev. B 96, 104410 (2017)], due to the high site selectivity of the Ni cations. Since our epitaxial NiFe2O4 layer with d = 3.5 nm has a high y values (0.91) and a reasonably large magnetization (180 emu/cc), it is expected to exhibit a strong spin filter effect, which can be used for efficient spin injection into Si. △ Less

Submitted 8 August, 2018; originally announced August 2018.

Comments: arXiv admin note: text overlap with arXiv:1704.01712

Journal ref: Phys. Rev. Materials 2, 104416 (2018)

Electronic structures of UX$_3$ (X=Al, Ga, and In) studied by photoelectron spectroscopy

Authors: Shin-ichi Fujimori, Masaaki Kobata, Yukiharu Takeda, Tetsuo Okane, Yuji Saitoh, Atsushi Fujimori, Hiroshi Yamagami, Yoshinori Haga, Etsuji Yamamoto, Yoshichika Ōnuki

Abstract: The electronic structures of UX$_3$ (X=Al, Ga, and In) were studied by photoelectron spectroscopy to understand the relationship between their electronic structures and magnetic properties. The band structures and Fermi surfaces of UAl$_3$ and UGa$_3$ were revealed experimentally by angle-resolved photoelectron spectroscopy (ARPES), and they were compared with the result of band-structure calculat… ▽ More The electronic structures of UX$_3$ (X=Al, Ga, and In) were studied by photoelectron spectroscopy to understand the relationship between their electronic structures and magnetic properties. The band structures and Fermi surfaces of UAl$_3$ and UGa$_3$ were revealed experimentally by angle-resolved photoelectron spectroscopy (ARPES), and they were compared with the result of band-structure calculations. The topologies of the Fermi surfaces and the band structures of UAl$_3$ and UGa$_3$ were explained reasonably well by the calculation, although bands near the Fermi level ($E_\mathrm{F}$) were renormalized owing to the finite electron correlation effect. The topologies of the Fermi surfaces of UAl$_3$ and UGa$_3$ are very similar to each other, except for some minor differences. Such minor differences in their Fermi surface or electron correlation effect might take an essential role in their different magnetic properties. No significant changes were observed between the ARPES spectra of UGa$_3$ in the paramagnetic and antiferromagnetic phases, suggesting that UGa$_3$ is an itinerant weak antiferromagnet. The effect of chemical pressure on the electronic structures of UX$_3$ compounds was also studied by utilizing the smaller lattice constants of UAl$_3$ and UGa$_3$ than that of UIn$_3$. The valence band spectrum of UIn$_3$ is accompanied by a satellite-like structure on the high-binding-energy side. The core-level spectrum of UIn$_3$ is also qualitatively different from those of UAl$_3$ and UGa$_3$. These findings suggest that the U~$5f$ states in UIn$_3$ are more localized than those in UAl$_3$ and UGa$_3$. △ Less

Submitted 18 September, 2017; originally announced September 2017.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. B 96, 115126 (2017)

Electronic structure of ThRu2Si2 studied by angle-resolved photoelectron spectroscopy: Elucidating the contribution of U 5f states in URu2Si2

Authors: Shin-ichi Fujimori, Masaaki Kobata, Yukiharu Takeda, Tetsuo Okane, Yuji Saitoh, Atsushi Fujimori, Hiroshi Yamagami, Yuji Matsumoto, Etsuji Yamamoto, Naoto Tateiwa, Yoshinori Haga

Abstract: The electronic structure of ThRu2Si2 was studied by angle-resolved photoelectron spectroscopy (ARPES) with incident photon energies of hn=655-745 eV. Detailed band structure and the three-dimensional shapes of Fermi surfaces were derived experimentally, and their characteristic features were mostly explained by means of band structure calculations based on the density functional theory. Comparison… ▽ More The electronic structure of ThRu2Si2 was studied by angle-resolved photoelectron spectroscopy (ARPES) with incident photon energies of hn=655-745 eV. Detailed band structure and the three-dimensional shapes of Fermi surfaces were derived experimentally, and their characteristic features were mostly explained by means of band structure calculations based on the density functional theory. Comparison of the experimental ARPES spectra of ThRu2Si2 with those of URu2Si2 shows that they have considerably different spectral profiles particularly in the energy range of 1 eV from the Fermi level, suggesting that U 5f states are substantially hybridized in these bands. The relationship between the ARPES spectra of URu2Si2 and ThRu2Si2 is very different from the one between the ARPES spectra of CeRu2Si2 and LaRu2Si2, where the intrinsic difference in their spectra is limited only in the very vicinity of the Fermi energy. The present result suggests that the U 5f electrons in URu2Si2 have strong hybridization with ligand states and have an essentially itinerant character. △ Less

Submitted 29 August, 2017; v1 submitted 27 August, 2017; originally announced August 2017.

Comments: 11 pages, 7 figures, accepted to Phys. Rev. B

Journal ref: Phys. Rev. B 96, 125117 (2017)

Electronic Structure and Magnetic Properties of Half-metallic Ferrimagnet Mn$_{2}$VAl Probed by Soft X-ray Spectroscopies

Authors: K. Nagai, H. Fujiwara, H. Aratani, S. Fujioka, H. Yomosa, Y. Nakatani, T. Kiss, A. Sekiyama, F. Kuroda, H. Fujii, T. Oguchi, A. Tanaka, J. Miyawaki, Y. Harada, Y. Takeda, Y. Saitoh, S. Suga, R. Y. Umetsu

Abstract: We have studied the electronic structure of ferrimagnetic Mn2VAl single crystal by means of soft X-ray absorption spectroscopy (XAS), X-ray absorption magnetic circular dichroism (XMCD) and resonant soft X-ray inelastic scattering (RIXS). We have successfully observed the XMCD signals for all constitute elements, supporting the spin polarized states at the Fermi level. The Mn $L_{2,3}$ XAS and XMC… ▽ More We have studied the electronic structure of ferrimagnetic Mn2VAl single crystal by means of soft X-ray absorption spectroscopy (XAS), X-ray absorption magnetic circular dichroism (XMCD) and resonant soft X-ray inelastic scattering (RIXS). We have successfully observed the XMCD signals for all constitute elements, supporting the spin polarized states at the Fermi level. The Mn $L_{2,3}$ XAS and XMCD spectra are reproduced by the spectral simulation based on density-functional theory (DFT), indicating itinerant character of the Mn 3d states. On the other hand, V $3d$ electrons are rather localized since the ionic model can qualitatively explain the V $L_{2,3}$ XAS and XMCD spectra as well as the local dd excitation revealed by V $L_3$ RIXS. △ Less

Submitted 18 June, 2017; v1 submitted 28 May, 2017; originally announced May 2017.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. B 97, 035143 (2018)

Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoFe2O4/Al2O3/Si(111) films studied by X-ray magnetic circular dichroism

Authors: Yuki K. Wakabayashi, Yosuke Nonaka, Yukiharu Takeda, Shoya Sakamoto, Keisuke Ikeda, Zhendong Chi, Goro Shibata, Arata Tanaka, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori, Ryosho Nakane

Abstract: Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O… ▽ More Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O4(111) layers with various thicknesses (thickness d = 1.4, 2.3, 4, and 11 nm) in the epitaxial CoFe2O4(111)/Al2O3(111)/Si(111) structures using soft X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) combined with cluster-model calculation. The magnetization of CoFe2O4 measured by XMCD gradually decreases with decreasing thickness d and finally a magnetically dead layer is clearly detected at d = 1.4 nm. The magnetically dead layer has frustration of magnetic interactions which is revealed from comparison between the magnetizations at 300 and 6 K. From analysis using configuration-interaction cluster-model calculation, the decrease of d leads to a decrease in the inverse-to-normal spinel structure ratio and also a decrease in the average valence of Fe at the octahedral sites. These results strongly indicate that the magnetically dead layer at the CoFe2O4/Al2O3 interface originates from various complex networks of superexchange interactions through the change in the crystallographic and electronic structures. Furthermore, from comparison of the magnetic properties between d = 1.4 and 2.3 nm, it is found that ferrimagnetic order of the magnetically dead layer at d = 1.4 nm is restored by the additional growth of the 0.9-nm-thick CoFe2O4 layer on it. △ Less

Submitted 6 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 96, 104410 (2017)

Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]

Authors: Masaki Kobayashi, Shinobu Ohya, Iriya Muneta, Yukiharu Takeda, Yoshihisa Harada, Juraj Krempasky, Thorsten Schmitt, Masaharu Oshima, Vladimir N. Strocov, Masaaki Tanaka, Atsushi Fujimori

Abstract: Clarification of the position of the Fermi level ($E_\mathrm{F}$) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recent publication, Souma $et$ $al$. [Sci. Rep. $\mathbf{6}$, 27266 (2016)], have investigated the band structure and the $E_\mathrm{F}$ position of GaMnAs using angle-resolved photoemission sp… ▽ More Clarification of the position of the Fermi level ($E_\mathrm{F}$) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recent publication, Souma $et$ $al$. [Sci. Rep. $\mathbf{6}$, 27266 (2016)], have investigated the band structure and the $E_\mathrm{F}$ position of GaMnAs using angle-resolved photoemission spectroscopy (ARPES), and concluded that $E_\mathrm{F}$ is located in the valence band (VB). However, this conclusion contradicts a number of recent experimental results for GaMnAs, which showed that $E_\mathrm{F}$ is located above the VB maximum in the impurity band (IB). Here, we show an alternative interpretation of their ARPES experiments, which is consistent with those recent experiments and supports the picture that $E_\mathrm{F}$ is located above the VB maximum in the IB. △ Less

Submitted 15 September, 2016; v1 submitted 27 August, 2016; originally announced August 2016.

Comments: 5 pages, 1 figure

Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films

Authors: Yuki K. Wakabayashi, Ryota Akiyama, Yukiharu Takeda, Masafumi Horio, Goro Shibata, Shoya Sakamoto, Yoshisuke Ban, Yuji Saitoh, Hiroshi Yamagami, Atsushi Fujimori, Masaaki Tanaka, Shinobu Ohya

Abstract: GeMn granular thin films are a unique and promising material for spintronics applications due to large positive magnetoresistance (MR). Previous studies on GeMn have suggested that the large MR is related to nanospinodal decomposition of GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagnetic matrix. However, its microscopic origin of the MR has not been clarified yet. Here, using X… ▽ More GeMn granular thin films are a unique and promising material for spintronics applications due to large positive magnetoresistance (MR). Previous studies on GeMn have suggested that the large MR is related to nanospinodal decomposition of GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagnetic matrix. However, its microscopic origin of the MR has not been clarified yet. Here, using X-ray magnetic circular dichroism (XMCD), which is extremely sensitive to the local magnetic state of each atom, we investigate the magnetic properties of the nanoparticles and the matrix in GeMn separately. We find that the MR ratio is proportional to the product of the magnetizations originating from the nanoparticles and the matrix. This result indicates that spin-polarized holes in the nanoparticles penetrate into the matrix and that these holes undergo spin-disorder magnetic scattering by the paramagnetic Mn atoms in the matrix, which induces the large MR. △ Less

Submitted 14 June, 2016; originally announced June 2016.

Journal ref: Physical Review B 95, 014417 (2017)

Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy

Authors: Shoya Sakamoto, Yuki K. Wakabayashi, Yukiharu Takeda, Shin-ichi Fujimori, Hakuto Suzuki, Yoshisuke Ban, Hiroshi Yamagami, Masaaki Tanaka, Shinobu Ohya, Atsushi Fujimori

Abstract: Ge$_{1-x}$Fe$_{x}$ (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with Si technology. We have studied its electronic structure by soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurements in order to elucidate the mechanism of the ferromagnetism. We observed finite Fe 3… ▽ More Ge$_{1-x}$Fe$_{x}$ (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with Si technology. We have studied its electronic structure by soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurements in order to elucidate the mechanism of the ferromagnetism. We observed finite Fe 3$d$ components in the states at the Fermi level ($E_{F}$) in a wide region in momentum space and $E_{F}$ was located above the valence-band maximum (VBM). First-principles supercell calculation also suggested that the $E_{F}$ is located above the VBM, within the narrow spin-down $d$($e$) band and within the spin-up impurity band of the deep acceptor-level origin derived from the strong $p$-$d$($t_{2}$) hybridization. We conclude that the narrow $d$($e$) band is responsible for the ferromagnetic coupling between Fe atoms while the acceptor-level-originated band is responsible for the transport properties of Ge:Fe. △ Less

Submitted 17 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 95, 075203 (2017)

Thickness-dependent magnetic properties and strain-induced orbital magnetic moment in SrRuO3 thin films

Authors: K. Ishigami, K. Yoshimatsu, D. Toyota, M. Takizawa, T. Yoshida, G. Shibata, T. Harano, Y. Takahashi, T. Kadono, V. K. Verma, V. R. Singh, Y. Takeda, T. Okane, Y. Saitoh, H. Yamagami, T. Koide, M. Oshima, H. Kumigashira, A. Fujimori

Abstract: Thin films of the ferromagnetic metal SrRuO3 (SRO) show a varying easy magnetization axis depending on the epitaxial strain and undergo a metal-to-insulator transition with decreasing film thickness. We have investigated the magnetic properties of SRO thin films with varying thicknesses fabricated on SrTiO3(001) substrates by soft x-ray magnetic circular dichroism (XMCD) at the Ru M2,3 edge. Resul… ▽ More Thin films of the ferromagnetic metal SrRuO3 (SRO) show a varying easy magnetization axis depending on the epitaxial strain and undergo a metal-to-insulator transition with decreasing film thickness. We have investigated the magnetic properties of SRO thin films with varying thicknesses fabricated on SrTiO3(001) substrates by soft x-ray magnetic circular dichroism (XMCD) at the Ru M2,3 edge. Results have shown that, with decreasing film thickness, the film changes from ferromagnetic to non-magnetic around 3monolayer thickness, consistent with previous magnetization and magneto-optical Kerr effect measurements. The orbital magnetic moment perpendicular to the film was found to be ~ 0.1μB/Ru atom, and remained nearly unchanged with decreasing film thickness while the spin magnetic moment decreases. Mechanism for the formation of the orbital magnetic moment is discussed based on the electronic structure of the compressively strained SRO film. △ Less

Submitted 4 July, 2015; v1 submitted 21 May, 2015; originally announced May 2015.

Comments: 6 pages, 6 figures, Submitted in Phys. Rev. B

Journal ref: Phys. Rev. B 92, 064402 (2015)

Electronic structures of ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ studied by angle-resolved photoelectron spectroscopy

Authors: Shin-ichi Fujimori, Takuo Ohkochi, Ikuto Kawasaki, Akira Yasui, Yukiharu Takeda, Tetsuo Okane, Yuji Saitoh, Atsushi Fujimori, Hiroshi Yamagami, Yoshinori Haga, Etsuji Yamamoto, Yoshichika Onuki

Abstract: The electronic structures of the ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ in the paramagnetic phase were studied by angle-resolved photoelectron spectroscopy using soft X-rays ($hν=400-500$). The quasi-particle bands with large contributions from $\mathrm{U}~5f$ states were observed in the vicinity of $E_\mathrm{F}$, suggesting that the $\mathrm{U}~5f$ electrons of these… ▽ More The electronic structures of the ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ in the paramagnetic phase were studied by angle-resolved photoelectron spectroscopy using soft X-rays ($hν=400-500$). The quasi-particle bands with large contributions from $\mathrm{U}~5f$ states were observed in the vicinity of $E_\mathrm{F}$, suggesting that the $\mathrm{U}~5f$ electrons of these compounds have an itinerant character. Their overall band structures were explained by the band-structure calculations treating all the $\mathrm{U}~5f$ electrons as being itinerant. Meanwhile, the states in the vicinity of $E_\mathrm{F}$ show considerable deviations from the results of band-structure calculations, suggesting that the shapes of Fermi surface of these compounds are qualitatively different from the calculations, possibly caused by electron correlation effect in the complicated band structures of the low-symmetry crystals. Strong hybridization between $\mathrm{U}~5f$ and $\mathrm{Co}~3d$ states in $\mathrm{UCoGe}$ were found by the $\mathrm{Co}~2p-3d$ resonant photoemission experiment, suggesting that $\mathrm{Co}~3d$ states have finite contributions to the magnetic, transport, and superconducting properties. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. B 91, 174503 (2015)

Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism

Authors: Shoya Sakamoto, Le Duc Anh, Pham Nam Hai, Goro Shibata, Yukiharu Takeda, Masaki Kobayashi, Yukio Takahashi, Tsuneharu Koide, Masaaki Tanaka, Atsushi Fujimori

Abstract: In order to investigate the mechanism of ferromagnetic ordering in the new n-type magnetic semiconductor (In,Fe)As co-doped with Be, we have performed X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of ferromagnetic and paramagnetic samples. The spectral line shapes suggest that the ferromagnetism is intrinsic originating from Fe atoms incorporated into the Zinc-… ▽ More In order to investigate the mechanism of ferromagnetic ordering in the new n-type magnetic semiconductor (In,Fe)As co-doped with Be, we have performed X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of ferromagnetic and paramagnetic samples. The spectral line shapes suggest that the ferromagnetism is intrinsic originating from Fe atoms incorporated into the Zinc-blende-type InAs lattice. The magnetization curves of Fe measured by XMCD were well reproduced by the superposition of a Langevin function representing superparamagnetic (SPM) behavior of nano-scale ferromagnetic domains and a T-linear function representing Curie-Weiss paramagnetism even much above the Curie temperatures. The data at 20 K showed a deviation from the Langevin behavior, suggesting a gradual establishment of macroscopic ferromagnetism on lowering temperature. The existence of nano-scale ferromagnetic domains indicated by the SPM behavior suggests spatial fluctuations of Fe concentration on the nano-scale. △ Less

Submitted 6 May, 2015; originally announced May 2015.

Journal ref: Phys. Rev. B 93, 035203 (2016)

Gradual localization of 5f states in orthorhombic UTX ferromagnets - polarized neutron diffraction study of Ru substituted UCoGe

Authors: Michal Valiska, Jiri Pospisil, Anne Stunault, Yukiharu Takeda, Beatrice Gillon, Yoshinori Haga, Karel Prokes, Mohsen M. Abd-Elmeguid, Gwilherm Nenert, Tetsuo Okane, Hiroshi Yamagami, Laurent Chapon, Arsene Gukasov, Alain Cousson, Etsuji Yamamoto, Vladimir Sechovsky

Abstract: We report on a microscopic study of the evolution of ferromagnetism in the Ru substituted ferromagnetic superconductor (FM SC) UCoGe crystallizing in the orthorhombic TiNiSi-type structure. For that purpose, two single crystals with composition UCo0.97Ru0.03Ge and UCo0.88Ru0.12Ge have been prepared and characterized by magnetization, AC susceptibility, specific heat and electrical resistivity meas… ▽ More We report on a microscopic study of the evolution of ferromagnetism in the Ru substituted ferromagnetic superconductor (FM SC) UCoGe crystallizing in the orthorhombic TiNiSi-type structure. For that purpose, two single crystals with composition UCo0.97Ru0.03Ge and UCo0.88Ru0.12Ge have been prepared and characterized by magnetization, AC susceptibility, specific heat and electrical resistivity measurements. Both compounds have been found to order ferromagnetically below TC = 6.5 K and 7.5 K, respectively, which is considerably higher than the TC = 3 K of the parent compound UCoGe. The higher values of TC are accompanied by enhanced values of the spontaneous moment mspont. = 0.11 mB/f.u. and mspont. = 0.21 mB/f.u., respectively in comparison to the tiny spontaneous moment of UCoGe (about 0.07mB/f.u.). No sign of superconductivity was detected in either compound. The magnetic moments of the samples were investigated on the microscopic scale using polarized neutron diffraction (PND) and for UCo0.88Ru0.12Ge also by soft X-ray magnetic circular dichroism (XMCD). The analysis of the PND results indicates that the observed enhancement of ferromagnetism is mainly due to the growth of the orbital part of the uranium 5f moment mL(U), reflecting a gradual localization of the 5f electrons with Ru substitution. In addition, the parallel orientation of the U and Co moments has been established in both substituted compounds. The results are discussed and compared with related isostructural ferromagnetic UTX compounds (T - transition metals, X - Si, Ge) in the context of a varying degree of the 5f-ligand hybridization. △ Less

Submitted 21 April, 2015; originally announced April 2015.

Journal ref: J. Phys. Soc. Jpn. 84, 084707 (2015)

Room temperature local ferromagnetism and nanoscale domain growth in the ferromagnetic semiconductor GeFe

Authors: Yuki K. Wakabayashi, Shoya Sakamoto, Yukiharu Takeda, Keisuke Ishigami, Yukio Takahashi, Yuji Saitoh, Hiroshi Yamagami, Atsushi Fujimori, Masaaki Tanaka, Shinobu Ohya

Abstract: We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly hybridized with the Ge 4p states, and have an unusually large orbital magnetic moment relative to the spin magnetic moment; i.e., morb/mspin = 0.3. We find that local… ▽ More We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly hybridized with the Ge 4p states, and have an unusually large orbital magnetic moment relative to the spin magnetic moment; i.e., morb/mspin = 0.3. We find that local ferromagnetic domains, which are formed through ferromagnetic exchange interactions in the high Fe content regions of the GeFe films, exist at room temperature, well above the Curie temperature. We demonstrate the first observation of the intriguing nanoscale domain growth process in which ferromagnetic domains expand as the temperature decreases, followed by a transition of the entire film into a ferromagnetic state at the Curie temperature. △ Less

Submitted 31 January, 2015; originally announced February 2015.

Polarized neutron diffraction and X-ray magnetic circular dichroism study of Ru doped UCoGe

Authors: Michal Valiska, Jiri Pospisil, Anne Stunault, Yukiharu Takeda, Beatrice Gillon, Yoshinori Haga, Karel Prokes, Gwilherm Nenert, Tetsuo Okane, Hiroshi Yamagami, Laurent Chapon, Arsene Goukassov, Allain Cousson, Etsuji Yamamoto, Vladimir Sechovsky

Abstract: We report on microscopic study of the ferromagnetism enhancement in the Ru doped ferromagnetic superconductor (FM SC) UCoGe. For that purpose, two single crystals with composition UCo0.97Ru0.03Ge and UCo0.88Ru0.12Ge were prepared. Both single crystals were investigated by polarized neutron diffraction (PND) at low temperatures in magnetic fields and the latter one also by the soft X-ray magnetic c… ▽ More We report on microscopic study of the ferromagnetism enhancement in the Ru doped ferromagnetic superconductor (FM SC) UCoGe. For that purpose, two single crystals with composition UCo0.97Ru0.03Ge and UCo0.88Ru0.12Ge were prepared. Both single crystals were investigated by polarized neutron diffraction (PND) at low temperatures in magnetic fields and the latter one also by the soft X-ray magnetic circular dichroism (XMCD) method. UCo0.96Ru0.03Ge and UCo0.88Ru0.12Ge have been found ordering ferromagnetically below the Curie temperature TC = 6 K and 8.5 K, respectively, which are considerable higher than TC = 3 K of UCoGe. The increase of TC is accompanied by enhancement of the spontaneous moment to ms = 0.11 mB/f.u. and ms = 0.21 mB/f.u., respectively. The analysis of the PND results assigns the ferromagnetism enhancement mainly to the growth of the orbital part of uranium 5 f moment. In contrast to the published results of PND study of the parent UCoGe, we have found parallel orientation of the U and Co moments in both doped compounds. Evolution of magnetic characteristics with Ru concentration is discussed within a scenario considering the varying 5 f-ligand hybridization as the key mechanism. △ Less

Submitted 22 April, 2015; v1 submitted 22 December, 2014; originally announced December 2014.

Comments: Updated version of the manuscript with title "Gradual localization of 5f states in orthorhombic UTX ferromagnets - polarized neutron diffraction study of Ru substituted UCoGe" was submitted, see article arXiv:1504.05645

Spin and orbital magnetic moments of Fe in the $n$-type ferromagnetic semiconductor (In,Fe)As

Authors: M. Kobayashi, L. D. Anh, P. N. Hai, Y. Takeda, S. Sakamoto, T. Kadono, T. Okane, Y. Saitoh, H. Yamagami, Y. Harada, M. Oshima, M. Tanaka, A. Fujimori

Abstract: The electronic and magnetic properties of Fe atoms in the ferromagnetic semiconductor (In,Fe)As codoped with Be have been studied by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) at the Fe $L_{2,3}$ edge. The XAS and XMCD spectra showed simple spectral line shapes similar to Fe metal, but the ratio of the orbital and spin magnetic moments ($M_\mathrm{orb}$/… ▽ More The electronic and magnetic properties of Fe atoms in the ferromagnetic semiconductor (In,Fe)As codoped with Be have been studied by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) at the Fe $L_{2,3}$ edge. The XAS and XMCD spectra showed simple spectral line shapes similar to Fe metal, but the ratio of the orbital and spin magnetic moments ($M_\mathrm{orb}$/$M_\mathrm{spin}$) estimated using the XMCD sum rules was significantly larger than that of Fe metal, indicating a significant orbital moment of Fe $3d$ electrons in (In,Fe)As:Be. The positive value of $M_\mathrm{orb}$/$M_\mathrm{spin}$ implies that the Fe $3d$ shell is more than half-filled, which arises from the hybridization of the Fe$^{3+}$ ($d^5$) state with the charge-transfer $d^6\underline{L}$ states, where $\underline{L}$ is a ligand hole in the host valence band. The XMCD intensity as a function of magnetic field indicated hysteretic behavior of the superparamagnetic-like component due to discrete ferromagnetic domains. △ Less

Submitted 20 May, 2014; originally announced May 2014.

Comments: 4 pages, 2 figures, 1 table

Itinerant magnetism in URhGe revealed by angle resolved photoelectron spectroscopy

Authors: Shin-ichi Fujimori, Ikuto Kawasaki, Akira Yasui, Yukiharu Takeda, Tetsuo Okane, Yuji Saitoh, Atsushi Fujimori, Hiroshi Yamagami, Yoshinori Haga, Etsuji Yamamoto, Yoshichika Onuki

Abstract: The electronic structure of the ferromagnetic superconductor URhGe in the paramagnetic phase has been studied by angle-resolved photoelectron spectroscopy using soft x rays (hn=595-700 eV). Dispersive bands with large contributions from U 5f states were observed in the ARPES spectra, and form Fermi surfaces. The band structure in the paramagnetic phase is partly explained by the band-structure cal… ▽ More The electronic structure of the ferromagnetic superconductor URhGe in the paramagnetic phase has been studied by angle-resolved photoelectron spectroscopy using soft x rays (hn=595-700 eV). Dispersive bands with large contributions from U 5f states were observed in the ARPES spectra, and form Fermi surfaces. The band structure in the paramagnetic phase is partly explained by the band-structure calculation treating all U 5f electrons as being itinerant, suggesting that an itinerant description of U 5f states is a good starting point for this compound. On the other hand, there are qualitative disagreements especially in the band structure near the Fermi level (E_B < 0.5 eV). The experimentally observed bands are less dispersive than the calculation, and the shape of the Fermi surface is different from the calculation. The changes in spectral functions due to the ferromagnetic transition were observed in bands near the Fermi level, suggesting that the ferromagnetism in this compound has an itinerant origin. △ Less

Submitted 2 April, 2014; originally announced April 2014.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 89, 104518 (2014)

Thickness-dependent ferromagnetic metal to paramagnetic insulator transition in La$_{0.6}$Sr$_{0.4}$MnO$_3$ thin films studied by x-ray magnetic circular dichroism

Authors: Goro Shibata, Kohei Yoshimatsu, Enju Sakai, Vijay Raj Singh, Virendra Kumar Verma, Keisuke Ishigami, Takayuki Harano, Toshiharu Kadono, Yukiharu Takeda, Tetsuo Okane, Yuji Saitoh, Hiroshi Yamagami, Akihito Sawa, Hiroshi Kumigashira, Masaharu Oshima, Tsuneharu Koide, Atsushi Fujimori

Abstract: Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the thickness-dependent MIT of the ferromagnetic metal La$_{0.6}$Sr$_{0.4}$MnO$_3$ by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. As the film t… ▽ More Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the thickness-dependent MIT of the ferromagnetic metal La$_{0.6}$Sr$_{0.4}$MnO$_3$ by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. As the film thickness was decreased across the critical thickness of the MIT (6-8 ML), a gradual decrease of the ferromagnetic signals and a concomitant increase of paramagnetic signals were observed, while the Mn valence abruptly decreased towards Mn$^{3+}$. These observations suggest that the ferromagnetic phase gradually and most likely inhomogeneously turns into the paramagnetic phase and both phases abruptly become insulating at the critical thickness. △ Less

Submitted 24 June, 2014; v1 submitted 3 November, 2013; originally announced November 2013.

Comments: 12 pages, 3 figures

Journal ref: Phys. Rev. B 89, 235123 (2014)

Orbital magnetic moment and coercivity of SiO$_{2}$-coated FePt nanoparticles studied by x-ray magnetic circular dichroism

Authors: Y. Takahashi, T. Kadono, V. R. Singh, V. K. Verma, K. Ishigami, G. Shibata, T. Harano, A. Fujimori, Y. Takeda, T. Okane, Y. Saitoh, H. Yamagami, S. Yamamoto, M. Takano

Abstract: We have investigated the spin and orbital magnetic moments of Fe in FePt nanoparticles in the $L$1$_{0}$-ordered phase coated with SiO$_{2}$ by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Fe $L_{\rm 2,3}$ absorption edges. Using XMCD sum rules, we evaluated the ratio of the orbital magnetic moment ($M_{\rm orb}$) to the spin magnetic moment… ▽ More We have investigated the spin and orbital magnetic moments of Fe in FePt nanoparticles in the $L$1$_{0}$-ordered phase coated with SiO$_{2}$ by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Fe $L_{\rm 2,3}$ absorption edges. Using XMCD sum rules, we evaluated the ratio of the orbital magnetic moment ($M_{\rm orb}$) to the spin magnetic moment ($M_{\rm spin}$) of Fe to be $M_{\rm orb}/M_{\rm spin}$ = 0.08. This $M_{\rm orb}/M_{\rm spin}$ value is comparable to the value (0.09) obtained for FePt nanoparticles prepared by gas phase condensation, and is larger than the values ($\sim$0.05) obtained for FePt thin films, indicating a high degree of $L$1$_{0}$ order. The hysteretic behavior of the FePt component of the magnetization was measured by XMCD. The magnetic coercivity ($H_{\rm c}$) was found to be as large as 1.8 T at room temperature, $\sim$3 times larger than the thin film value and $\sim$50 times larger than that of the gas phase condensed nanoparticles. The hysteresis curve is well explained by the Stoner-Wohlfarth model for non-interacting single-domain nanoparticles with the $H_{\rm c}$ distributed from 1 T to 5 T. △ Less

Submitted 30 October, 2013; originally announced October 2013.

Comments: 5 pages, 3 figures, 1 table

Journal ref: Phys. Rev. B 90, 024423 (2014)

Role of doped Ru in coercivity-enhanced La$_{0.6}$Sr$_{0.4}MnO$_3$ thin film studied by x-ray magnetic circular dichroism

Authors: T. Harano, G. Shibata, K. Ishigami, Y. Takashashi, V. K. Verma, V. R. Singh, T. Kadono, A. Fujimori, Y. Takeda, T. Okane, Y. Saitoh, H. Yamagami, T. Koide, H. Yamada, A. Sawa, M. Kawasaki, Y. Tokura, A. Tanaka

Abstract: The coercivity of La$_{1-x}$Sr$_x$MnO$_3$ thin films can be enhanced by Ru substitution for Mn. In order to elucidate its mechanism, we performed soft x-ray absorption and magnetic circular dichroism measurements at the Ru M$_{2,3}$ and Mn L$_{2,3}$ edges. We found that the spin direction of Ru and Mn are opposite and that Ru has a finite orbital magnetic moment. Cluster-model analysis indicated t… ▽ More The coercivity of La$_{1-x}$Sr$_x$MnO$_3$ thin films can be enhanced by Ru substitution for Mn. In order to elucidate its mechanism, we performed soft x-ray absorption and magnetic circular dichroism measurements at the Ru M$_{2,3}$ and Mn L$_{2,3}$ edges. We found that the spin direction of Ru and Mn are opposite and that Ru has a finite orbital magnetic moment. Cluster-model analysis indicated that the finite orbital magnetic moment as well as the reduced spin moment of Ru result from local lattice distortion caused by epitaxial strain from the SrTiO$_3$ substrate in the presence of spin-orbit interaction. △ Less

Submitted 10 September, 2013; originally announced September 2013.

Comments: 10 pages, 4 figures, 2 tables, accepted Applied Physics Letters

Journal ref: Appl. Phys. Lett. 102, 222404 (2013)

Enhanced ferromagnetic moment in Co-doped BiFeO3 thin films studied by soft X-ray circular dichroism

Authors: V. R. Singh, V. K. Verma, K. Ishigami, G. Shibata, Y. Yamazaki, A. Fujimori, Y. Takeda, T. Okane, Y. Saitoh, H. Yamagami, Y. Nakamura, M. Azuma, Y. Shimakawa

Abstract: BiFeO$_3$ (BFO) shows both ferroelectricity and magnetic ordering at room temperature but its ferromagnetic component, which is due to spin canting, is negligible. Substitution of transition-metal atoms such as Co for Fe is known to enhance the ferromagnetic component in BFO. In order to reveal the origin of such magnetization enhancement, we performed soft x-ray absorption spectroscopy (XAS) and… ▽ More BiFeO$_3$ (BFO) shows both ferroelectricity and magnetic ordering at room temperature but its ferromagnetic component, which is due to spin canting, is negligible. Substitution of transition-metal atoms such as Co for Fe is known to enhance the ferromagnetic component in BFO. In order to reveal the origin of such magnetization enhancement, we performed soft x-ray absorption spectroscopy (XAS) and soft x-ray magnetic circular dichroism (XMCD) studies of BiFe$_{1-x}$Co$_x$O$_3$ ({\it x} = 0 to 0.30) (BFCO) thin films grown on LaAlO$_3$(001) substrates. The XAS results indicated that the Fe and Co ions are in the Fe$^{3+}$ and Co$^{3+}$ states. The XMCD results showed that the Fe ions show ferromagnetism while the Co ions are antiferromagnetic at room temperature. The XAS and XMCD measurements also revealed that part of the Fe$^{3+}$ ions are tetrahedrally co-ordinated by oxygen ions but that the XMCD signals of the octahedrally coordinated Fe$^{3+}$ ions increase with Co content. The results suggest that an impurity phase such as the ferrimagnetic $γ$-Fe$_2$O$_3$ which exists at low Co concentration decreases with increasing Co concentration and that the ferromagnetic component of the Fe$^{3+}$ ion in the octrahedral crystal fields increases with Co concentration, probably reflecting the increased canting of the Fe$^{3+}$ ions. △ Less

Submitted 25 August, 2013; originally announced August 2013.

Comments: Accepted in J. Applied Physics

Journal ref: J. Appl. Phys. 114, 103905 (2013)

Electronic excitations of magnetic impurity state in diluted magnetic semiconductor (Ga,Mn)As

Authors: M. Kobayashi, H. Niwa, Y. Takeda, A. Fujimori, Y. Senba, H. Ohashi, A. Tanaka, S. Ohya, P. N. Hai, M. Tanaka, Y. Harada, M. Oshima

Abstract: The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic X-ray scattering (RIXS). From configuration-interaction cluster-model calculations, the line shapes of the Mn $L_3$ RIXS spectra can be explained by $d$-$d$ excitations from the Mn$^{3+}$ ground state, dominated by charge-transferred states, rather than a Mn$^{2+}$ ground state. Unlike archetypical $d$-$d$ excitatio… ▽ More The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic X-ray scattering (RIXS). From configuration-interaction cluster-model calculations, the line shapes of the Mn $L_3$ RIXS spectra can be explained by $d$-$d$ excitations from the Mn$^{3+}$ ground state, dominated by charge-transferred states, rather than a Mn$^{2+}$ ground state. Unlike archetypical $d$-$d$ excitation, the peak widths are broader than the experimental energy resolution. We attribute the broadening to a finite lifetime of the $d$-$d$ excitations, which decay rapidly to electron-hole pairs in the host valence and conduction bands through hybridization of the Mn $3d$ orbital with the ligand band. △ Less

Submitted 6 June, 2013; originally announced June 2013.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 112, 107203 (2014)

Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As

Authors: Masaki Kobayashi, Iriya Muneta, Yukiharu Takeda, Yoshihisa Harada, Atsushi Fujimori, Juraj Krempasky, Thorsten Schmitt, Sinobu Ohya, Masaaki Tanaka, Masaharu Oshima, Vladimir N. Strocov

Abstract: (Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this Letter, we use soft x-ray angle-resolved photoemission spectroscopy to positively identify the ferromagn… ▽ More (Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this Letter, we use soft x-ray angle-resolved photoemission spectroscopy to positively identify the ferromagnetic Mn 3d-derived impurity band in (Ga,Mn)As. The band appears hybridized with the light-hole band of the host GaAs. These findings conclude the picture of the valence band structure of (Ga,Mn)As disputed for more than a decade. The non-dispersive character of the IB and its location in vicinity of the valence-band maximum indicate that the Mn 3d-derived impurity band is formed as a split-off Mn-impurity state predicted by the Anderson impurity model. Responsible for the ferromagnetism in (Ga,Mn)As is the transport of hole carriers in the impurity band. △ Less

Submitted 31 January, 2013; originally announced February 2013.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 89, 205204 (2014)

Electronic configuration of Mn ions in the $π$-d molecular ferromagnet $β$-Mn phthalocyanine studied by soft x-ray magnetic circular dichroism

Authors: T. Kataoka, Y. Sakamoto, Y. Yamazaki, V. R. Singh, A. Fujimori, Y. Takeda, T. Ohkochi, S. -I. Fujimori, T. Okane, Y. Saitoh, H. Yamagami, A. Tanaka

Abstract: We have studied the electronic structure of the molecular ferromagnet $β$-Mn phthalocyanine ($β$-MnPc) in a polycrystalline form, which has been reported to show ferromagnetism at T$<$8.6 K, by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the experimental results and subsequent cluster-model calculation, we find that the ferromagnetic Mn ion in $β$-MnPc is… ▽ More We have studied the electronic structure of the molecular ferromagnet $β$-Mn phthalocyanine ($β$-MnPc) in a polycrystalline form, which has been reported to show ferromagnetism at T$<$8.6 K, by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the experimental results and subsequent cluster-model calculation, we find that the ferromagnetic Mn ion in $β$-MnPc is largely in the $^4$$E$$_g$ ground state arising from the ($e$$_{g}$)$^3$($b$$_{2g}$)$^1$($a$$_{1g}$)$^1$ [($d_{xz,yz}$)$^3$($d_{xy}$)$^1$($d_{z^{2}}$)$^1$] configuration of the Mn$^{2+}$ state. Considering that the highest occupied molecular orbital (HOMO) of MnPc with the $^4$$E$$_g$ ground state originates from the $a$$_{1g}$ orbital of the Mn$^{2+}$ ion, it is proposed that $a$$_{1g}$-$a$$_{1g}$ exchange coupling via the $π$ orbitals of the phthalocyanine ring plays a crucial role in the ferromagnetism of $β$-MnPc. △ Less

Submitted 23 January, 2012; v1 submitted 19 January, 2012; originally announced January 2012.

Comments: 15 pages, 4 figures

Journal ref: Solid State Communications, 152, 806 (2012)

Ferromagnetism in ZnO co-doped with Mn and N studied by soft x-ray magnetic circular dichroism

Authors: T. Kataoka, Y. Yamazaki, V. R. Singh, Y. Sakamoto, A. Fujimori, Y. Takeda, T. Ohkochi, S. -I. Fujimori, T. Okane, Y. Saitoh, H. Yamagami, A. Tanaka, M. Kapilashrami, L. Belova, K. V. Rao

Abstract: We have investigated the electronic structure of ZnO:Mn and ZnO:Mn,N thin films using x-ray magnetic circular dichroism (XMCD) and resonance-photoemission spectroscopy. From the Mn 2$p$$\rightarrow3d$ XMCD results, it is shown that, while XMCD signals only due to paramagnetic Mn$^{2+}$ ions were observed in ZnO:Mn, nonmagnetic, paramagnetic and ferromagnetic Mn$^{2+}$ ions coexist in ZnO:Mn,N. XMC… ▽ More We have investigated the electronic structure of ZnO:Mn and ZnO:Mn,N thin films using x-ray magnetic circular dichroism (XMCD) and resonance-photoemission spectroscopy. From the Mn 2$p$$\rightarrow3d$ XMCD results, it is shown that, while XMCD signals only due to paramagnetic Mn$^{2+}$ ions were observed in ZnO:Mn, nonmagnetic, paramagnetic and ferromagnetic Mn$^{2+}$ ions coexist in ZnO:Mn,N. XMCD signals of ZnO:Mn,N revealed that the localized Mn$^{2+}$ ground state and Mn$^{2+}$ state hybridized with ligand hole coexisted, implying $p$-$d$ exchange coupling. In the valence-band spectra, spectral weight near the Fermi level was suppressed, suggesting that interaction between magnetic moments in ZnO:Mn,N has localized nature. △ Less

Submitted 28 December, 2011; originally announced January 2012.

Comments: 4 figures

Journal ref: Appl. Phys. Lett. 99, 132508 (2011)