Showing 1–6 of 6 results for author: Takata, K

Optical non-Hermitian skin effect in two-dimensional uniform media

Authors: Taiki Yoda, Yuto Moritake, Kenta Takata, Kazuki Yokomizo, Shuichi Murakami, Masaya Notomi

Abstract: The non-Hermitian skin effect (NHSE) is a novel localization phenomenon in certain non-Hermitian systems with gain and/or loss. Most of previous works study the non-Hermitian skin effect in periodic systems. However, electromagnetic waves often propagate within uniform materials without periodic modulation, and it has not been clear whether the optical NHSE occurs in uniform media such as bulk mat… ▽ More The non-Hermitian skin effect (NHSE) is a novel localization phenomenon in certain non-Hermitian systems with gain and/or loss. Most of previous works study the non-Hermitian skin effect in periodic systems. However, electromagnetic waves often propagate within uniform materials without periodic modulation, and it has not been clear whether the optical NHSE occurs in uniform media such as bulk materials and electromagnetic metamaterials. Here we establish the theory of the optical NHSE in non-Hermitian anisotropic media. We show that the NHSE occurs even in uniform media with appropriate anisotropy and material loss. The localization of non-Hermitian skin modes are completely determined by an effective gauge potential caused by the anisotropy of a dielectric tensor. On the basis of the theory, we propose subwavelength multilayer metamaterials as a novel platform for the optical NHSE. We also propose a new concept of stationarily-excited skin modes whose frequencies are forced to be real in non-Hermitian systems. We find that the NHSE occurs even under the condition that the frequency is forced to be real, which implies that the NHSE we propose is observable under stationary excitation. Our work presents a general theory of the NHSE in homogeneous systems, and pave the way to realize the optical NHSE in bulk materials and metamaterials. △ Less

Submitted 9 March, 2023; originally announced March 2023.

Comments: 17 pages, 7 figures

Emulating the local Kuramoto model with an injection-locked photonic crystal laser array

Authors: Naotomo Takemura, Kenta Takata, Masato Takiguchi, Masaya Notomi

Abstract: The Kuramoto model is a mathematical model for describing the collective synchronization phenomena of coupled oscillators. We theoretically demonstrate that an array of coupled photonic crystal lasers emulates the Kuramoto model with non-delayed nearest-neighbor coupling (the local Kuramoto model). Our novel strategy employs indirect coupling between lasers via additional cold cavities. By install… ▽ More The Kuramoto model is a mathematical model for describing the collective synchronization phenomena of coupled oscillators. We theoretically demonstrate that an array of coupled photonic crystal lasers emulates the Kuramoto model with non-delayed nearest-neighbor coupling (the local Kuramoto model). Our novel strategy employs indirect coupling between lasers via additional cold cavities. By installing cold cavities between laser cavities, we avoid the strong coupling of lasers and realize ideal mutual injection-locking with effective non-delayed dissipative coupling. First, after discussing the limit cycle interpretation of laser oscillation, we demonstrate the synchronization of two indirectly coupled lasers by numerically simulating coupled-mode equations. Second, by performing a phase reduction analysis, we show that laser dynamics in the proposed device can be mapped to the local Kuramoto model. Finally, we briefly demonstrate that a chain of indirectly coupled photonic crystal lasers actually emulates the one-dimensional local Kuramoto chain. We also argue that our proposed structure, which consists of periodically aligned cold cavities and laser cavities, will best be realized by using state-of-the-art buried multiple quantum well photonic crystals. △ Less

Submitted 5 May, 2021; v1 submitted 30 October, 2020; originally announced October 2020.

Journal ref: Sci Rep 11, 8587 (2021)

Active topological photonics

Authors: Yasutomo Ota, Kenta Takata, Tomoki Ozawa, Alberto Amo, Zhetao Jia, Boubacar Kante, Masaya Notomi, Yasuhiko Arakawa, Satoshi Iwamoto

Abstract: Topological photonics has emerged as a novel route to engineer the flow of light. Topologically-protected photonic edge modes, which are supported at the perimeters of topologically-nontrivial insulating bulk structures, have been of particular interest as they may enable low-loss optical waveguides immune to structural disorder. Very recently, there is a sharp rise of interest in introducing gain… ▽ More Topological photonics has emerged as a novel route to engineer the flow of light. Topologically-protected photonic edge modes, which are supported at the perimeters of topologically-nontrivial insulating bulk structures, have been of particular interest as they may enable low-loss optical waveguides immune to structural disorder. Very recently, there is a sharp rise of interest in introducing gain materials into such topological photonic structures, primarily aiming at revolu-tionizing semiconductor lasers with the aid of physical mechanisms existing in topological physics. Examples of re-markable realizations are topological lasers with unidirectional light output under time-reversal symmetry breaking and topologically-protected polariton and micro/nano-cavity lasers. Moreover, the introduction of gain and loss provides a fascinating playground to explore novel topological phases, which are in close relevance to non-Hermitian and parity-time symmetric quantum physics and are in general difficult to access using fermionic condensed matter systems. Here, we review the cutting-edge research on active topological photonics, in which optical gain plays a pivotal role. We discuss recent realizations of topological lasers of various kinds, together with the underlying physics explaining the emergence of topological edge modes. In such demonstrations, the optical modes of the topological lasers are deter-mined by the dielectric structures and support lasing oscillation with the help of optical gain. We also address recent researches on topological photonic systems in which gain and loss themselves essentially influence on topological prop-erties of the bulk systems. We believe that active topological photonics provides powerful means to advance mi-cro/nanophotonics systems for diverse applications and topological physics itself as well. △ Less

Submitted 11 December, 2019; v1 submitted 11 December, 2019; originally announced December 2019.

Comments: 23 pages, 11 figures, review paper to appear in Nanophotonics

Journal ref: Nanophotonics 9, 547 (2020)

Valence-band structure of ferromagnetic semiconductor (InGaMn)As

Authors: Shinobu Ohya, Iriya Muneta, Yufei Xin, Kenta Takata, Masaaki Tanaka

Abstract: To clarify the whole picture of the valence-band structures of prototype ferromagnetic semiconductors (III,Mn)As (III: In and Ga), we perform systematic experiments of the resonant tunneling spectroscopy on [(In_0.53Ga_0.47)_1-x Mn_x]As (x=0.06-0.15) and In_0.87Mn_0.13As grown on AlAs/ In_0.53Ga_0.47As:Be/ p+InP(001). We show that the valence band of InGaMnAs almost remains unchanged from that of… ▽ More To clarify the whole picture of the valence-band structures of prototype ferromagnetic semiconductors (III,Mn)As (III: In and Ga), we perform systematic experiments of the resonant tunneling spectroscopy on [(In_0.53Ga_0.47)_1-x Mn_x]As (x=0.06-0.15) and In_0.87Mn_0.13As grown on AlAs/ In_0.53Ga_0.47As:Be/ p+InP(001). We show that the valence band of InGaMnAs almost remains unchanged from that of the host semiconductor InGaAs, that the Fermi level exists in the band gap, and that the p-d exchange splitting in the valence band is negligibly small in (InGaMn)As. In the In0.87Mn0.13As sample, although the resonant peaks are very weak due to the large strain induced by the lattice mismatch between InP and InMnAs, our results also indicate that the Fermi level exists in the band gap and that the p-d exchange splitting in the valence band is negligibly small. These results are quite similar to those of GaMnAs obtained by the same method, meaning that there are no holes in the valence band, and that the impurity-band holes dominate the transport and magnetism both in the InGaMnAs and In_0.87Mn_0.13As films. This band picture of (III,Mn)As is remarkably different from that of II-VI-based diluted magnetic semiconductors. △ Less

Submitted 14 August, 2012; originally announced August 2012.

Comments: 21 pages, 6 figures, accepted for publication in Phys. Rev. B

Comment on "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel

Authors: Shinobu Ohya, Kenta Takata, Iriya Muneta, Pham Nam Hai, Masaaki Tanaka

Abstract: We comment on the recent paper "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel. They claimed that the oscillations observed in the d2I/dV2-V characteristics in our studies on the resonant tunneling spectroscopy on GaMnAs, are not attributed to the resonant levels in the GaMnAs layer but to the two-dimensional interfacial subbands in the GaAs:Be… ▽ More We comment on the recent paper "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel. They claimed that the oscillations observed in the d2I/dV2-V characteristics in our studies on the resonant tunneling spectroscopy on GaMnAs, are not attributed to the resonant levels in the GaMnAs layer but to the two-dimensional interfacial subbands in the GaAs:Be layer. Here, we show that this interpretation is not able to explain our experimental results and our conclusions remain unchanged. △ Less

Submitted 12 November, 2011; v1 submitted 22 February, 2011; originally announced February 2011.

Comments: 5 pages, 2 figures

Universal valence-band picture of the ferromagnetic semiconductor GaMnAs

Authors: Shinobu Ohya, Kenta Takata, Masaaki Tanaka

Abstract: The origin of ferromagnetism in the prototype ferromagnetic semiconductor GaMnAs is still controversial due to the insufficient understanding of its band structure and Fermi level position. Here, we show the universal valence-band (VB) picture of GaMnAs obtained by resonant tunneling spectroscopy for a variety of surface GaMnAs layers with the Mn concentrations from 6 to 15% and the Curie temperat… ▽ More The origin of ferromagnetism in the prototype ferromagnetic semiconductor GaMnAs is still controversial due to the insufficient understanding of its band structure and Fermi level position. Here, we show the universal valence-band (VB) picture of GaMnAs obtained by resonant tunneling spectroscopy for a variety of surface GaMnAs layers with the Mn concentrations from 6 to 15% and the Curie temperatures from 71 to 154 K. We find that the Fermi level exists in the bandgap, and that the VB structure of GaAs is almost perfectly maintained in all the GaMnAs samples, i.e. VB is not merged with the impurity band. Furthermore, the p-d exchange splitting of VB is found to be quite small (only several meV) even in GaMnAs with a high Curie temperature (154 K). These results indicate that the VB structure of GaMnAs is quite insensitive to the Mn doping. △ Less

Submitted 12 September, 2010; originally announced September 2010.