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Fingerprints of Mott and Slater gaps in the core-level photoemission spectra of antiferromagnetic iridates
Authors:
K. Nakagawa,
A. Hariki,
T. Okauchi,
H. Fujiwara,
K. -H. Ahn,
Y. Murakami,
S. Hamamoto,
Y. Kanai-Nakata,
T. Kadono,
A. Higashiya,
K. Tamasaku,
M. Yabashi,
T. Ishikawa,
A. Sekiyama,
S. Imada,
J. Kuneš,
K. Takase,
A. Yamasaki
Abstract:
We present Ir $4f$ core-level hard-x-ray photoemission spectroscopy (HAXPES) experiments conducted across antiferromagnetic (AFM) ordering transition in Ruddlesden-Popper iridates Sr$_2$IrO$_4$ and Sr$_3$Ir$_2$O$_7$. The Ir $4f$ spectra exhibit distinct changes between the AFM and paramagnetic (PM) phases, with the spectral difference $I_\text{PM}-I_\text{AFM}$ showing a contrasting behavior in th…
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We present Ir $4f$ core-level hard-x-ray photoemission spectroscopy (HAXPES) experiments conducted across antiferromagnetic (AFM) ordering transition in Ruddlesden-Popper iridates Sr$_2$IrO$_4$ and Sr$_3$Ir$_2$O$_7$. The Ir $4f$ spectra exhibit distinct changes between the AFM and paramagnetic (PM) phases, with the spectral difference $I_\text{PM}-I_\text{AFM}$ showing a contrasting behavior in the two compounds. By employing computational simulations using the local-density approximation combined with the dynamical mean-field theory method, we elucidate that $I_\text{PM}-I_\text{AFM}$ primary reflects the Slater or Mott-Hubbard character of the AFM insulating state rather than material specific details. This sensitivity to fine low-energy electronic structure arises from the dependence of charge-transfer responses to the sudden creation of a localized core hole on both metal-insulator transitions and long-range AFM ordering. Our result broadens the applications of core-level HAXPES as a tool for characterization of electronic structure.
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Submitted 8 May, 2025; v1 submitted 19 April, 2024;
originally announced April 2024.
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Competitive coexistence of ferromagnetism and metal--insulator transition of VO$_2$ nanoparticles
Authors:
Tsuyoshi Hatano,
Akihiro Fukawa,
Hiroki Yamamoto,
Keiichirou Akiba,
Kouichi Takase
Abstract:
We investigated the magnetic and electric properties of nanometer-sized vanadium dioxide (VO$_2$) particles. VO$_2$ nanoparticles were formed by milling VO$_2$ powder. We measured the magnetic field dependence of the magnetization of the VO$_2$ powder and nanoparticles. The VO$_2$ powder did not exhibit ferromagnetism, whereas the VO$_2$ nanoparticles exhibited ferromagnetism. In addition, we fabr…
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We investigated the magnetic and electric properties of nanometer-sized vanadium dioxide (VO$_2$) particles. VO$_2$ nanoparticles were formed by milling VO$_2$ powder. We measured the magnetic field dependence of the magnetization of the VO$_2$ powder and nanoparticles. The VO$_2$ powder did not exhibit ferromagnetism, whereas the VO$_2$ nanoparticles exhibited ferromagnetism. In addition, we fabricated samples by bridging between electrodes with the VO$_2$ nanoparticles, and the temperature dependence of their resistance was measured. Metal-insulator transitions (MITs) were observed, and the temperature range where the MIT occurred was wider than that in a typical bulk VO$_2$. The VO$_2$ nanoparticles exhibited these properties of ferromagnetism and MIT possibly because of the surface and size effects of the VO$_2$ nanoparticles. These results indicate the first observation of the competitive coexistence of ferromagnetism and MIT of VO$_2$ nanoparticles.
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Submitted 4 April, 2024;
originally announced April 2024.
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Identification of electronic dimensionality reduction in semiconductor quantum well structures
Authors:
Takahito Takeda,
Kengo Takase,
Vladimir N. Strocov,
Masaaki Tanaka,
Masaki Kobayashi
Abstract:
Two-dimensional (2D) systems, such as high-temperature superconductors, surface states of topological insulators, and layered materials, have been intensively studied using vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy (ARPES). In semiconductor films (heterostructures), quantum well (QW) states arise due to electron/hole accumulations at the surface (interface). The quantized…
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Two-dimensional (2D) systems, such as high-temperature superconductors, surface states of topological insulators, and layered materials, have been intensively studied using vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy (ARPES). In semiconductor films (heterostructures), quantum well (QW) states arise due to electron/hole accumulations at the surface (interface). The quantized states due to quantum confinement can be observed by VUV-ARPES, while the periodic intensity modulations along the surface normal (kz) direction of these quantized states are also observable by varying incident photon energy, resembling three-dimensional (3D) band dispersion. We have conducted soft X-ray (SX) ARPES measurements on thick and ultrathin III-V semiconductor InSb(001) films to investigate the electronic dimensionality reduction in semiconductor QWs. In addition to the dissipation of the kz dispersion, the SX-ARPES observations demonstrate the changes of the symmetry and periodicity of the Brillouin zone in the ultrathin film as 2D QW compared with these of the 3D bulk one, indicating the electronic dimensionality reduction of the 3D bulk band dispersion caused by the quantum confinement. The results provide a critical diagnosis using SX-ARPES for the dimensionality reduction in semiconductor QW structures.
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Submitted 17 April, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Ferromagnetism induced by hybridization of Fe 3d orbitals with ligand InSb bands in n-type ferromagnetic semiconductor (In,Fe)Sb
Authors:
Ryo Okano,
Tomoki Hotta,
Takahito Takeda,
Kohsei Araki,
Kengo Takase,
Le Duc Anh,
Shoya Sakamoto,
Yukiharu Takeda,
Atsushi Fujimori,
Masaaki Tanaka,
Masaki Kobayashi
Abstract:
Fe-doped III-V ferromagnetic semiconductor (FMS) (In,Fe)Sb is a promising material for spintronic device applications because of the n-type carrier conduction and the ferromagnetism with high Curie temperature (TC > 300 K). To clarify the mechanism of the high-TC ferromagnetism, we have investigated the electronic structure and magnetic properties of an (In,Fe)Sb thin film by performing x-ray abso…
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Fe-doped III-V ferromagnetic semiconductor (FMS) (In,Fe)Sb is a promising material for spintronic device applications because of the n-type carrier conduction and the ferromagnetism with high Curie temperature (TC > 300 K). To clarify the mechanism of the high-TC ferromagnetism, we have investigated the electronic structure and magnetic properties of an (In,Fe)Sb thin film by performing x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Fe L2,3 edges. The magnetic-field dependence of the XMCD spectra reveals that there are ferromagnetic-like Fe and paramagnetic-like Fe components in the (In,Fe)Sb thin film. The XAS and XMCD spectra of the ferromagnetic-like and paramagnetic-like Fe components resemble those of other Fe-doped FMSs and extrinsic oxides, respectively. The finite value of the ratio between the orbital and spin magnetic moments estimated by applying the XMCD sum rules indicates that the valence state of the Fe ions substituting for the In sites in (In,Fe)Sb is not purely ionic Fe3+, but intermediate between Fe3+ and Fe2+. The qualitative correspondence between the magnetic-field dependence of the visible-light magnetic circular dichroism intensity and that of the XMCD intensity demonstrates that the Zeeman splitting of the InSb band is proportional to the net magnetization of the doped Fe. These results suggest that the ferromagnetism of (In,Fe)Sb originates from the Fe 3d orbitals hybridized with the host InSb bands.
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Submitted 9 February, 2022;
originally announced February 2022.
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Parity-dependent shot noise and spin-flip relaxation process in a hybrid superconductor-nanowire quantum dot
Authors:
Keiko Takase,
Yasuhiro Utsumi,
Yamato Ashikawa,
Guoqiang Zhang,
Kouta Tateno,
Yuma Okazaki,
Satoshi Sasaki
Abstract:
We report shot noise measurements for a quantum dot formed in an InAs nanowire suspended between superconducting electrodes. We find a clear alternation for the shot noise value in the Coulomb blockade regime between even and odd electron occupation in the dot, indicating that super-Poissonian (Poissonian) shot noise with the Fano factor reaching around 2 (1) occurs for even (odd) parity. With inc…
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We report shot noise measurements for a quantum dot formed in an InAs nanowire suspended between superconducting electrodes. We find a clear alternation for the shot noise value in the Coulomb blockade regime between even and odd electron occupation in the dot, indicating that super-Poissonian (Poissonian) shot noise with the Fano factor reaching around 2 (1) occurs for even (odd) parity. With increasing magnetic field, the parity effect disappears and all the regimes show the Fano factor of around 1. The whole observation in our experiments quantitatively agrees with simulation obtained from full-counting statistics of cotunneling including spin-flip relaxation process, which corresponds to modelling electron motion in a quantum dot with strong spin-orbit interaction.
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Submitted 29 July, 2021;
originally announced July 2021.
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Electrical tuning of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition
Authors:
Keiko Takase,
Kouta Tateno,
Satoshi Sasaki
Abstract:
We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform magneto-transport measurements and find a crossover from weak localization to weak antilocalization effect with increasing gate voltage, which demonstrates that the Rashba spin…
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We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform magneto-transport measurements and find a crossover from weak localization to weak antilocalization effect with increasing gate voltage, which demonstrates that the Rashba spin-orbit coupling is tuned by the gate electrode. The efficiency of the gate tuning of the spin-orbit interaction is higher than those obtained for two-dimensional electron gas, and as high as that for a gate-all-around nanowire metal-oxide-semiconductor field-effect transistor that was previously reported. The spin-orbit interaction is discussed in line with not only conventionally used one-dimensional model but also recently proposed model that considers effects of microscopic band structures of materials.
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Submitted 18 June, 2021;
originally announced June 2021.
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Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb
Authors:
Tomoki Hotta,
Kengo Takase,
Kosuke Takiguchi,
Karumuri Sriharsha,
Le Duc Anh,
Masaaki Tanaka
Abstract:
We study the growth and properties of quaternary-alloy ferromagnetic semiconductor (FMS) (In0.94-x,Gax,Fe0.06)Sb (x = 5% - 30%, Fe concentration is fixed at 6%) grown by low temperature molecular beam epitaxy (LT-MBE).Reflection high-energy electron diffraction (RHEED) patterns, scanning transmission electron microscopy (STEM) lattice images, and X-ray diffraction (XRD) spectra indicate that the (…
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We study the growth and properties of quaternary-alloy ferromagnetic semiconductor (FMS) (In0.94-x,Gax,Fe0.06)Sb (x = 5% - 30%, Fe concentration is fixed at 6%) grown by low temperature molecular beam epitaxy (LT-MBE).Reflection high-energy electron diffraction (RHEED) patterns, scanning transmission electron microscopy (STEM) lattice images, and X-ray diffraction (XRD) spectra indicate that the (In0.94-x,Gax,Fe0.06)Sb layers have a zinc-blende crystal structure without any other second phase. The lattice constant of the (In0.94-x,Gax,Fe0.06)Sb films changes linearly with the Ga concentration x, indicating that Ga atoms substitute In atoms in the zinc-blend structure. We found that the carrier type of can be systematically controlled by varying x, being n-type when x \le 10% and p-type when x \ge 20%. Characterizations using magnetic circular dichroism (MCD) spectroscopy indicate that the (In0.94-x,Gax,Fe0.06)Sb layers have intrinsic ferromagnetism with relatively high Curie temperatures (TC = 40 - 120 K). The ability to widely control the fundamental material properties (lattice constant, bandgap, carrier type, magnetic property) of (In0.94-x,Gax,Fe0.06)Sb demonstrated in this work is essential for spintronic device applications.
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Submitted 2 June, 2021;
originally announced June 2021.
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Elemental topological Dirac semimetal α-Sn with high quantum mobility
Authors:
Le Duc Anh,
Kengo Takase,
Takahiro Chiba,
Yohei Kota,
Kosuke Takiguchi,
Masaaki Tanaka
Abstract:
α-Sn with a diamond-type crystal structure provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, realisation of high-quality α-Sn remains a challenge, which limits our understanding of its quantum transport properties and device applications. Here, we present epitaxial growth…
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α-Sn with a diamond-type crystal structure provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, realisation of high-quality α-Sn remains a challenge, which limits our understanding of its quantum transport properties and device applications. Here, we present epitaxial growth of α-Sn on InSb (001) with the highest quality thus far and reveal that it is a topological Dirac semimetal (TDS) by quantum transport investigations together with first-principles calculations. We realise unprecedentedly high quantum mobilities of both the surface state (30000 cm^2/Vs), which is ten times higher than the previously reported values, and the bulk heavy-hole (HH) state (1700 cm^2/Vs), which has never been obtained experimentally. These excellent features allow us, for the first time, to quantitatively characterise the nontrivial interfacial and bulk band structure of α-Sn via Shubnikov-de Haas oscillations at various temperatures and under various magnetic field directions. These results reveal the existence of a topological surface state (TSS) and a bulk HH band, both with nontrivial phase shifts, indicating that the TDS phase of α-Sn is established. Furthermore, we demonstrate a crossover from the TDS to a two-dimensional topological insulator (2D-TI) and a subsequent phase transition to a trivial insulator when varying the thickness of α-Sn. Our work indicates that α-Sn is an excellent model system to study novel topological phases and a prominent material candidate for topological devices.
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Submitted 28 May, 2021;
originally announced May 2021.
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Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature
Authors:
Kengo Takase,
Le Duc Anh,
Kosuke Takiguchi,
Masaaki Tanaka
Abstract:
We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP) configuration in (Ga,Fe)Sb / InAs (thickness $t_\mathrm{InAs}$ nm) / (Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature ($T_\mathrm{C}$). An MR curve with an open minor loop is clearly observed at 3.7 K in a sample with $t_\mathrm{InAs}$ = 3 nm, which origi…
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We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP) configuration in (Ga,Fe)Sb / InAs (thickness $t_\mathrm{InAs}$ nm) / (Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature ($T_\mathrm{C}$). An MR curve with an open minor loop is clearly observed at 3.7 K in a sample with $t_\mathrm{InAs}$ = 3 nm, which originates from the parallel - antiparallel magnetization switching of the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAs interfaces. The MR ratio increases (from 0.03 to 1.6%) with decreasing $t_\mathrm{InAs}$ (from 9 to 3 nm) due to the enhancement of the interface scattering. This is the first demonstration of the spin-valve effect in Fe-doped FMS heterostructures, paving the way for device applications of these high- $T_\mathrm{C}$ FMSs.
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Submitted 29 May, 2020;
originally announced May 2020.
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Three-dimensional electronic structures and the metal-insulator transition in Ruddlesden-Popper iridates
Authors:
A. Yamasaki,
H. Fujiwara,
S. Tachibana,
D. Iwasaki,
Y. Higashino,
C. Yoshimi,
K. Nakagawa,
Y. Nakatani,
K. Yamagami,
H. Aratani,
O. Kirilmaz,
M. Sing,
R. Claessen,
H. Watanabe,
T. Shirakawa,
S. Yunoki,
A. Naitoh,
K. Takase,
J. Matsuno,
H. Takagi,
A. Sekiyama,
Y. Saitoh
Abstract:
In this study, we systematically investigate 3D momentum($\hbar k$)-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Sr$_{n+1}$Ir$_n$O$_{3n+1}$ using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO$_2$-plane structure. This tran…
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In this study, we systematically investigate 3D momentum($\hbar k$)-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Sr$_{n+1}$Ir$_n$O$_{3n+1}$ using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO$_2$-plane structure. This transition occurs when the spin-orbit-coupled $j_{\rm eff}$=1/2 band changes its behavior in the dispersion relation and moves across the Fermi energy. In addition, an emerging band along the $Γ$(0,0,0)-R($π$,$π$,$π$) direction is found to play a crucial role in the metallic characteristics of SrIrO$_3$. By scanning the photon energy over 350 eV, we reveal the 3D Fermi surface in SrIrO$_3$ and $k_z$-dependent oscillations of photoelectron intensity in Sr$_3$Ir$_2$O$_7$. In contrast to previously reported results obtained using low-energy photons, folded bands derived from lattice distortions and/or magnetic ordering make significantly weak (but finite) contributions to the $k$-resolved photoemission spectrum. At the first glance, this leads to the ambiguous result that the observed $k$-space topology is consistent with the unfolded Brillouin zone (BZ) picture derived from a non-realistic simple square or cubic Ir lattice. Through careful analysis, we determine that a superposition of the folded and unfolded band structures has been observed in the ARPES spectra obtained using photons in both ultraviolet and SX regions. To corroborate the physics deduced using low-energy ARPES studies, we propose to utilize SX-ARPES as a powerful complementary technique, as this method surveys more than one whole BZ and provides a panoramic view of electronic structures.
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Submitted 14 October, 2016;
originally announced October 2016.
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Multiscale simulation of polymer melt spinning by using the dumbbell model
Authors:
Takeshi Sato,
Kazuhiro Takase,
Takashi Taniguchi
Abstract:
We investigated the spinning process of a polymeric material by using a multiscale simulation method which connects the macroscopic and microscopic states through the stress and strain-rate tensor fields, by using Lagrangian particles (filled with polymer chains) along the spinning line. We introduce a large number of Lagrangian fluid particles into the fluid, each containing Np-Hookean-dumbbells…
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We investigated the spinning process of a polymeric material by using a multiscale simulation method which connects the macroscopic and microscopic states through the stress and strain-rate tensor fields, by using Lagrangian particles (filled with polymer chains) along the spinning line. We introduce a large number of Lagrangian fluid particles into the fluid, each containing Np-Hookean-dumbbells to mimic the polymer chains (Np=$10^4$), which is equivalent to the upper convected Maxwell fluid in the limit that Np$\rightarrow \infty$. Depending on the Reynolds number Re, we studied the dynamical behaviors of fibers for the (a) Re =0 and (b) finite Re cases, for different draw ratios Dr, ranging from 10 to 30, and two typical Deborah numbers De=$10^{-3}$ and De=$10^{-2}$. In the limit Re$\rightarrow$ 0 (a), as the Deborah number De increases, the elastic effect makes the system stable. At finite Re (b), we found that inertial effects play an important role in determining the dynamical behavior of the spinning process, and for Dr=$10^{-2}$ the system is quite stable, at least up to a draw ratio of Dr=30. We also found that the fiber velocity and cross section area are determined solely by the draw ratio. By comparing the velocity and cross section area profiles with the end-point distribution for the dumbbell connective vectors, for dumbbells located in Lagrangian particles along typical places along the spinning line, we show that our multiscale simulation method successfully bridges the microscopic state of the system with its simultaneous macroscopic flow behavior. It is also confirmed that the present schemes gives good agreements with the results obtained by the Maxwell constitutive equation.
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Submitted 3 September, 2016;
originally announced September 2016.
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Photoemission System with Polarized Hard X-rays for Probing Ground State Symmetry of Strongly Correlated Materials
Authors:
H. Fujiwara,
S. Naimen,
A. Higashiya,
Y. Kanai,
H. Yomosa,
K. Yamagami,
T. Kiss,
T. Kadono,
S. Imada,
A. Yamasaki,
K. Takase,
S. Otsuka,
T. Shimizu,
S. Shingubara,
S. Suga,
M. Yabashi,
K. Tamasaku,
T. Ishikawa,
A. Sekiyama
Abstract:
We have developed a polarized hard X-ray photoemission (HAXPES) system to study the ground-state symmetry of strongly correlated materials. The linear polarization of the incoming X-ray beam is switched by the transmission-type phase retarder composed of two diamond (100) crystals. The best degree of the linear polarization $P_L$ is $-0.96$, containing the vertical polarization component of 98%. A…
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We have developed a polarized hard X-ray photoemission (HAXPES) system to study the ground-state symmetry of strongly correlated materials. The linear polarization of the incoming X-ray beam is switched by the transmission-type phase retarder composed of two diamond (100) crystals. The best degree of the linear polarization $P_L$ is $-0.96$, containing the vertical polarization component of 98%. A newly developed low temperature two-axis manipulator enables easy polar and azimuthal rotations to select the detection direction of photoelectrons. The lowest temperature achieved is 9 K, offering us a chance to access the ground state even for the strongly correlated electron systems in cubic symmetry. The co-axial sample monitoring system with the long-working-distance microscope enables us to keep measuring the same region on the sample surface before and after rotation procedures. Combining this sample monitoring system with a micro-focused X-ray beam by means of an ellipsoidal Kirkpatrick-Baez mirror (25 $μ$m $\times$ 25 $μ$m (FWHM)), we have demonstrated the polarized valence-band HAXPES on NiO for voltage application as resistive random access memories to reveal the origin of the metallic spectral weight near the Fermi level.
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Submitted 18 May, 2015;
originally announced May 2015.
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Impact of graphene quantum capacitance on transport spectroscopy
Authors:
K. Takase,
S. Tanabe,
S. Sasaki,
H. Hibino,
K. Muraki
Abstract:
We demonstrate experimentally that graphene quantum capacitance $C_{\mathrm{q}}$ can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphene device, in which interface states serve as charge reservoirs. The Fermi-level dependence of $C_{\mathrm{q}}$ is manifested as an unusual parabolic…
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We demonstrate experimentally that graphene quantum capacitance $C_{\mathrm{q}}$ can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphene device, in which interface states serve as charge reservoirs. The Fermi-level dependence of $C_{\mathrm{q}}$ is manifested as an unusual parabolic gate voltage ($V_{\mathrm{g}}$) dependence of the carrier density, centered on the Dirac point. Consequently, in high magnetic fields $B$, the spectroscopy of longitudinal resistance ($R_{xx}$) vs. $V_{\mathrm{g}}$ represents the structure of the unequally spaced relativistic graphene Landau levels (LLs). $R_{xx}$ mapping vs. $V_{\mathrm{g}}$ and $B$ thus reveals the vital role of the zero-energy LL on the development of the anomalously wide $ν=2$ quantum Hall state.
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Submitted 29 October, 2012;
originally announced October 2012.
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Electron correlation in FeSe superconductor studied by bulk-sensitive photoemission spectroscopy
Authors:
A. Yamasaki,
Y. Matsui,
S. Imada,
K. Takase,
H. Azuma,
T. Muro,
Y. Kato,
A. Higashiya,
A. Sekiyama,
S. Suga,
M. Yabashi,
K. Tamasaku,
T. Ishikawa,
K. Terashima,
H. Kobori,
A. Sugimura,
N. Umeyama,
H. Sato,
Y. Hara,
N. Miyakawa,
S. I. Ikeda
Abstract:
We have investigated the electronic structures of recently discovered superconductor FeSe by soft-x-ray and hard-x-ray photoemission spectroscopy with high bulk sensitivity. The large Fe 3d spectral weight is located in the vicinity of the Fermi level (EF), which is demonstrated to be a coherent quasi-particle peak. Compared with the results of the band structure calculation with local-density app…
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We have investigated the electronic structures of recently discovered superconductor FeSe by soft-x-ray and hard-x-ray photoemission spectroscopy with high bulk sensitivity. The large Fe 3d spectral weight is located in the vicinity of the Fermi level (EF), which is demonstrated to be a coherent quasi-particle peak. Compared with the results of the band structure calculation with local-density approximation, Fe 3d band narrowing and the energy shift of the band toward EF are found, suggesting an importance of the electron correlation effect in FeSe. The self energy correction provides the larger mass enhancement value (Z^-1=3.6) than in Fe-As superconductors and enables us to separate a incoherent part from the spectrum. These features are quite consistent with the results of recent dynamical mean-field calculations, in which the incoherent part is attributed to the lower Hubbard band.
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Submitted 28 September, 2010;
originally announced September 2010.
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Disorder-sensitive superconductivity in the iron silicide Lu$_2$Fe$_3$Si$_5$ studied by the Lu-site substitutions
Authors:
T. Watanabe,
H. Sasame,
H. Okuyama,
K. Takase,
Y. Takano
Abstract:
We studied effect of non-magnetic and magnetic impurities on superconductivity in Lu$_2$Fe$_3$Si$_5$ by small amount substitution of the Lu site, which investigated structural, magnetic, and electrical properties of non-magnetic (Lu$_{1-x}$Sc$_x$)$_2$Fe$_3$Si$_5$, (Lu$_{1-x}$Y$_x$)$_2$Fe$_3$Si$_5$, and magnetic (Lu$_{1-x}$Dy$_x$)$_2$Fe$_3$Si$_5$. The rapid depression of $T_c$ by non-magnetic imp…
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We studied effect of non-magnetic and magnetic impurities on superconductivity in Lu$_2$Fe$_3$Si$_5$ by small amount substitution of the Lu site, which investigated structural, magnetic, and electrical properties of non-magnetic (Lu$_{1-x}$Sc$_x$)$_2$Fe$_3$Si$_5$, (Lu$_{1-x}$Y$_x$)$_2$Fe$_3$Si$_5$, and magnetic (Lu$_{1-x}$Dy$_x$)$_2$Fe$_3$Si$_5$. The rapid depression of $T_c$ by non-magnetic impurities in accordance with the increase of residual resistivity reveals the strong pair breaking dominated by disorder. We provide compelling evidence for the sign reversal of the superconducting order parameter in Lu$_2$Fe$_3$Si$_5$.
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Submitted 30 June, 2009;
originally announced June 2009.
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Itinerancy and Electron Correlation in FeSe 1-x Superconductor Studied by Bulk-Sensitive Photoemission Spectroscopy
Authors:
A. Yamasaki,
S. Imada,
K. Takase,
T. Muro,
Y. Kato,
H. Kobori,
A. Sugimura,
N. Umeyama,
H. Sato,
Y. Hara,
N. Miyakawa,
S. I. Ikeda
Abstract:
We have investigated the electronic structures of newly discovered superconductor FeSe1-x by bulk-sensitive photoemission spectroscopy (PES). The large Fe 3d spectral weight is located in the vicinity of the Fermi level (EF) and it decreases steeply toward EF . Compared with results of band structure calculations, narrowing the Fe 3d band width and the energy shift of the band toward EF are foun…
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We have investigated the electronic structures of newly discovered superconductor FeSe1-x by bulk-sensitive photoemission spectroscopy (PES). The large Fe 3d spectral weight is located in the vicinity of the Fermi level (EF) and it decreases steeply toward EF . Compared with results of band structure calculations, narrowing the Fe 3d band width and the energy shift of the band toward EF are found, suggesting a mass enhancement due to the weak electron correlation effect. Meanwhile, Fe 2p core-level PES reveals a strong itinerant character of Fe 3d electrons. These features are very similar to those in other Fe-based high-Tc superconductors.
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Submitted 16 March, 2009; v1 submitted 19 February, 2009;
originally announced February 2009.
