Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
Authors:
Hisato Yamaguchi,
Shuichi Ogawa,
Daiki Watanabe,
Hideaki Hozumi,
Yongqian Gao,
Goki Eda,
Cecilia Mattevi,
Takeshi Fujita,
Akitaka Yoshigoe,
Shinji Ishizuka,
Lyudmyla Adamska,
Takatoshi Yamada,
Andrew M. Dattelbaum,
Gautam Gupta,
Stephen K. Doorn,
Kirill A. Velizhanin,
Yuden Teraoka,
Mingwei Chen,
Han Htoon,
Manish Chhowalla,
Aditya D. Mohite,
Yuji Takakuwa
Abstract:
We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC.…
▽ More
We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.
△ Less
Submitted 3 May, 2016;
originally announced May 2016.
Electron emission from conduction band of diamond with negative electron affinity
Authors:
Hisato Yamaguchi,
Tomoaki Masuzawa,
Shuho Nozue,
Yuki Kudo,
Ichitaro Saito,
Julian Koe,
Masato Kudo,
Takatoshi Yamada,
Yuji Takakuwa,
Ken Okano
Abstract:
Experimental evidence explaining the extremely low-threshold electron emission from diamond reported in 1996 has been obtained for the first time. Direct observation using combined ultraviolet photoelectron spectroscopy/field emission spectroscopy (UPS/FES) proved that the origin of field-induced electron emission from heavily nitrogen (N)-doped chemical vapour deposited (CVD) diamond was at condu…
▽ More
Experimental evidence explaining the extremely low-threshold electron emission from diamond reported in 1996 has been obtained for the first time. Direct observation using combined ultraviolet photoelectron spectroscopy/field emission spectroscopy (UPS/FES) proved that the origin of field-induced electron emission from heavily nitrogen (N)-doped chemical vapour deposited (CVD) diamond was at conduction band minimum (CBM) utilising negative electron affinity (NEA). The significance of the result is that not only does it prove the utilisation of NEA as the dominant factor for the extremely low-threshold electron emission from heavily N-doped CVD diamond, but also strongly implies that such low-threshold emission is possible from other types of diamond, and even other materials having NEA surface. The low-threshold voltage, along with the stable intensity and remarkably narrow energy width, suggests that this type of electron emission can be applied to develop a next generation vacuum nano-electronic devices with long lifetime and high energy resolution.
△ Less
Submitted 12 February, 2019; v1 submitted 12 October, 2009;
originally announced October 2009.
