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Thermal conductivity reduction due to phonon geometrical scattering in nano-engineered epitaxial germanium
Authors:
Jessy Paterson,
Sunanda Mitra,
Yanqing Liu,
Mustapha Boukhari,
Dhruv Singhal,
David Lacroix,
Emmanuel Hadji,
André Barski,
Dimitri Tainoff,
Olivier Bourgeois
Abstract:
Nano-engineering crystalline materials can be used to tailor their thermal properties. By adding new nanoscale phonon scattering centers and controlling their size, one can effectively decrease the phonon mean free path and hence the thermal conductivity of a fully crystalline material. In this letter, we use the 3$ω$ method in the temperature range of 100-300 K to experimentally report on the mor…
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Nano-engineering crystalline materials can be used to tailor their thermal properties. By adding new nanoscale phonon scattering centers and controlling their size, one can effectively decrease the phonon mean free path and hence the thermal conductivity of a fully crystalline material. In this letter, we use the 3$ω$ method in the temperature range of 100-300 K to experimentally report on the more than threefold reduction of the thermal conductivity of an epitaxially-grown crystalline germanium thin film with embedded polydispersed crystalline \ch{Ge3Mn5} nano-inclusions with diameters ranging from 5 to 25~nm. A detailed analysis of the structure of the thin film coupled with Monte Carlo simulations of phonon transport highlight the role of the nano-inclusions volume fraction in the reduction of the phononic contribution to the thermal conductivity, in particular its temperature dependence, leading to a phonon mean free path that is set by geometrical constraints.
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Submitted 30 April, 2024;
originally announced April 2024.
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Measurement of anisotropic thermal conductivity of a dense forest of nanowires using the 3$ω$ method
Authors:
Dhruv Singhal,
Jessy Paterson,
Dimitri Tainoff,
Jacques Richard,
Meriam Ben-Khedim,
Pascal Gentile,
Laurent Cagnon,
Daniel Bourgault,
Denis Buttard,
Olivier Bourgeois
Abstract:
The 3$ω$ method is a dynamic measurement technique developed for determining the thermal conductivity of thin films or semi-infinite bulk materials. A simplified model is often applied to deduce the thermal conductivity from the slope of the real part of the ac temperature amplitude as a function of the logarithm of frequency, which in-turn brings a limitation on the kind of samples under observat…
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The 3$ω$ method is a dynamic measurement technique developed for determining the thermal conductivity of thin films or semi-infinite bulk materials. A simplified model is often applied to deduce the thermal conductivity from the slope of the real part of the ac temperature amplitude as a function of the logarithm of frequency, which in-turn brings a limitation on the kind of samples under observation. In this work, we have measured the thermal conductivity of a forest of nanowires embedded in nanoporous alumina membranes using the 3$ω$ method. An analytical solution of 2D heat conduction is then used to model the multilayer system, considering the anisotropic thermal properties of the different layers, substrate thermal conductivity and their thicknesses. Data treatment is performed by fitting the experimental results with the 2D model on two different sets of nanowires (silicon and BiSbTe) embedded in the matrix of nanoporous alumina template, having thermal conductivities that differ by at least one order of magnitude. These experimental results show that this method extends the applicability of the 3$ω$ technique to more complex systems having anisotropic thermal properties.
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Submitted 21 November, 2018;
originally announced November 2018.
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Reduction of phonon mean free path: from low temperature physics to room temperature applications in thermoelectricity
Authors:
Olivier Bourgeois,
Dimitri Tainoff,
Adib Tavakoli,
Yanqing Liu,
Christophe Blanc,
Mustapha Boukhari,
André Barski,
Emmanuel Hadji
Abstract:
It has been proposed for a long time now that the reduction of the thermal conductivity by reducing the phonon mean free path is one of the best way to improve the current performance of thermoelectrics. By measuring the thermal conductance and thermal conductivity of nanowires and thin films, we show different ways of increasing the phonon scattering from low temperature up to room temperature ex…
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It has been proposed for a long time now that the reduction of the thermal conductivity by reducing the phonon mean free path is one of the best way to improve the current performance of thermoelectrics. By measuring the thermal conductance and thermal conductivity of nanowires and thin films, we show different ways of increasing the phonon scattering from low temperature up to room temperature experiments. It is shown that playing with the geometry (constriction, periodic structures, nano-inclusions), from the ballistic to the diffusive limit, the phonon thermal transport can be severely altered in single crystalline semiconducting structures; the phonon mean free path being in consequence reduced. The diverse implications on thermoelectric properties will be eventually discussed.
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Submitted 14 December, 2016;
originally announced December 2016.
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Specific heat measurement of thin suspended SiN membrane from 8 K to 300 K using the 3$ω$-V$\ddot{o}$lklein method
Authors:
Hossein Ftouni,
Dimitri Tainoff,
Jacques Richard,
Kunal Lulla,
Jean Guidi,
Eddy Collin,
Olivier Bourgeois
Abstract:
We present a specific heat measurement technique adapted to thin or very thin suspended membranes from low temperature (8 K) to 300 K. The presented device allows the measurement of the heat capacity of a 70 ng silicon nitride membrane (50 or 100 nm thick), corresponding to a heat capacity of 1.4x10$^{-10}$ J/K at 8 K and 5.1x10$^{-8}$ J/K at 300 K. Measurements are performed using the 3$ω$ method…
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We present a specific heat measurement technique adapted to thin or very thin suspended membranes from low temperature (8 K) to 300 K. The presented device allows the measurement of the heat capacity of a 70 ng silicon nitride membrane (50 or 100 nm thick), corresponding to a heat capacity of 1.4x10$^{-10}$ J/K at 8 K and 5.1x10$^{-8}$ J/K at 300 K. Measurements are performed using the 3$ω$ method coupled to the V$\ddot{o}$lklein geometry. This configuration allows the measurement of both specific heat and thermal conductivity within the same experiment. A transducer (heater/thermometer) is used to create an oscillation of the heat flux on the membrane; the voltage oscillation appearing at the third harmonic which contains the thermal information is measured using a Wheatstone bridge set-up. The heat capacity measurement is performed by measuring the variation of the 3$ω$ voltage over a wide frequency range and by fitting the experimental data using a thermal model adapted to the heat transfer across the membrane. The experimental data are compared to a regular Debye model; the specific heat exhibits features commonly seen for glasses at low temperature.
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Submitted 24 November, 2015;
originally announced November 2015.
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The thermal conductivity of silicon nitride membranes is not sensitive to stress
Authors:
Hossein Ftouni,
Christophe Blanc,
Dimitri Tainoff,
Andrew D. Fefferman,
Martial Defoort,
Kunal J. Lulla,
Jacques Richard,
Eddy Collin,
Olivier Bourgeois
Abstract:
We have measured the thermal properties of suspended membranes from 10 K to 300 K for two amplitudes of internal stress (about 0.1 GPa and 1 GPa) and for two different thicknesses (50 nm and 100 nm). The use of the original 3 ω-Volklein method has allowed the extraction of both the specific heat and the thermal conductivity of each SiN membrane over a wide temperature range. The mechanical propert…
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We have measured the thermal properties of suspended membranes from 10 K to 300 K for two amplitudes of internal stress (about 0.1 GPa and 1 GPa) and for two different thicknesses (50 nm and 100 nm). The use of the original 3 ω-Volklein method has allowed the extraction of both the specific heat and the thermal conductivity of each SiN membrane over a wide temperature range. The mechanical properties of the same substrates have been measured at helium temperatures using nanomechanical techniques. Our measurements show that the thermal transport in freestanding SiN membranes is not affected by the presence of internal stress. Consistently, mechanical dissipation is also unaffected even though Qs increase with increasing tensile stress. We thus demonstrate that the theory developed by Wu and Yu [Phys. Rev. B 84, 174109 (2011)] does not apply to this amorphous material in this stress range. On the other hand, our results can be viewed as a natural consequence of the "dissipation dilution" argument [Y. L. Huang and P. R. Saulson, Rev. Sci. Instrum. 69, 544 (1998)] which has been introduced in the context of mechanical damping.
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Submitted 5 June, 2015;
originally announced June 2015.
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Oriented Attachment of ZnO Nanocrystals
Authors:
Dimitri Hapiuk,
Bruno Masenelli,
Karine Masenelli-Varlot,
Dimitri Tainoff,
Olivier Boisron,
Clement Albin,
Patrice Melinon
Abstract:
Self-organization of nanoparticles is a major issue to synthesize mesoscopic structures. Among the possible mechanisms leading to self-organization, the oriented attachment is efficient yet not completely understood. We investigate here the oriented attachment process of ZnO nanocrystals preformed in the gas phase. During the deposition in high vacuum, about 60% of the particles, which are uncappe…
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Self-organization of nanoparticles is a major issue to synthesize mesoscopic structures. Among the possible mechanisms leading to self-organization, the oriented attachment is efficient yet not completely understood. We investigate here the oriented attachment process of ZnO nanocrystals preformed in the gas phase. During the deposition in high vacuum, about 60% of the particles, which are uncapped, form larger crystals through oriented attachment. In the present conditions of deposition, no selective direction for the oriented attachment is noticed. To probe the driving force of the oriented attachment, and more specifically the possible influence of the dipolar interaction between particles, we have deposited the same nanocrystals in the presence of a constant electric field. The expected effect was to enhance the fraction of domains resulting from the oriented attachment due to the increased interaction of the particle dipoles with the electric field. The multiscale analytical and statistical analysis (TEM coupled to XRD) shows no significant influence of the electric field on the organization of the particles. We therefore conclude that the dipolar interaction between nanocrystals is not the prominent driving force in the process. Consequently, we argue, in accordance with recent theoretical and experimental investigations, that the surface reduction, possibly driven by Coulombic interaction, may be the major mechanism for the oriented attachment process.
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Submitted 10 July, 2013;
originally announced July 2013.
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Thermoelectric propertie of Ge based electron crystal phonon glass materials
Authors:
Dimitri Tainoff,
André Barski,
Eric Prestat,
Daniel Bourgault,
Emmanuell Hadji,
Yanqing Liu,
Pascale Bayle-Guillemaud,
Olivier Bourgeois
Abstract:
We report on the elaboration of germanium manganese nanostructured thin films and the measurement of their thermoelectric properties. We investigate the growth of Ge:Mn layers along with a thorough structural characterization of this materials at the nanoscale. The room temperature thermoelectric properties of these layers containing spherical inclusions are discussed regarding their potential as…
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We report on the elaboration of germanium manganese nanostructured thin films and the measurement of their thermoelectric properties. We investigate the growth of Ge:Mn layers along with a thorough structural characterization of this materials at the nanoscale. The room temperature thermoelectric properties of these layers containing spherical inclusions are discussed regarding their potential as a model of "electron crystal phonon glass material". We show that the thermal conductivity can be decreased by a factor of 30, even if the electronic properties can be conserved as in the bulk. The thermoelectric performance ZT of such material is as high as 0.15 making them a promising thermoelectric p-type material for Ge related application.
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Submitted 7 January, 2013;
originally announced January 2013.
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Low temperature reflectivity study of ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates
Authors:
Luc Beaur,
Thierry Bretagnon,
Christelle Brimont,
Thierry Guillet,
Bernard Gil,
Dimitri Tainoff,
M. Teisseire,
J. M. Chauveau
Abstract:
We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane optical anisotropies, as predicted by group theory, and marked reflectance structures, as an evidence of good interface morphologies. Signatures ofc onfined excitons…
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We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane optical anisotropies, as predicted by group theory, and marked reflectance structures, as an evidence of good interface morphologies. Signatures ofc onfined excitons built from the spin-orbit split-off valence band, the analog of exciton C in bulk ZnO are detected in normal incidence reflectivity experiments using a photon polarized along the c axis of the wurtzite lattice. Experiments performed in the context of an orthogonal photon polarization, at 90^{\circ}; of this axis, reveal confined states analogs of A and B bulk excitons. Envelope function calculations which include excitonic interaction nicely account for the experimental report.
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Submitted 17 October, 2011; v1 submitted 10 January, 2011;
originally announced January 2011.
