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Characterization of NbTiN/HZO/NbTiN MIM Capacitors for high frequency AC Clock & Power Distribution Network for Superconducting Digital Circuits
Authors:
Seifallah Ibrahim,
Blake Hodges,
Steven Brebels,
Julian Gil Pinzon,
Trent Josephsen,
Ankit Pokhrel,
Daniel Perez Lozano,
Yann Canvel,
Bart Kenens,
Amey M. Walke,
Gianpiero Maccarrone Lapi,
Sara Iraci,
Mihaela Popovici,
Benjamin Huet,
Quentin Herr,
Zsolt Tőkei,
Anna Herr
Abstract:
A resonant clock-power distribution network is critical for scaling energy efficient superconducting digital technology to practical high integration density circuits. High-k, tunable capacitors enable implementation of a resonant power delivery network supporting circuits with up to 400 Mdevices/cm2. We report the cryogenic characterization of Metal-Insulator-Metal capacitors using a Hafnium Zirc…
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A resonant clock-power distribution network is critical for scaling energy efficient superconducting digital technology to practical high integration density circuits. High-k, tunable capacitors enable implementation of a resonant power delivery network supporting circuits with up to 400 Mdevices/cm2. We report the cryogenic characterization of Metal-Insulator-Metal capacitors using a Hafnium Zirconium Oxide (HZO) ferroelectric insulating layer and Niobium Titanium Nitride (NbTiN) superconducting electrodes. The fabricated chip includes capacitor arrays for low frequency characterization and a half-wave transmission line resonator for RF characterization. A specific capacitance of 3 uF/cm2, DC leakage current of 10-8 A/cm2 at 2 V and a constant 5 percent tunability up to 4 GHz were measured at 2.6 K.
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Submitted 6 April, 2025;
originally announced April 2025.
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Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab
Authors:
Jerome Mitard,
Luka Kljucar,
Nouredine Rassoul,
Harold Dekkers,
Michiel van Setten,
Adrian Vaisman Chasin,
Geoffrey Pourtois,
Attilio Belmonte,
Gabriele Luca Donadio,
Ludovic Goux,
Ming Mao,
Harinarayanan Puliyalil,
Lieve Teugels,
Diana Tsvetanova,
Manoj Nag,
Soeren Steudel,
Jose Ignacio del Agua Borniquel,
Jothilingam Ramalingam,
Romain Delhougne,
Chris J. Wilson,
Zsolt Tokei,
Gouri Sankar Kar
Abstract:
Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is challenging with an integration of front side gate, a scaled back gated flow has been optimized by multiplying design of experiments around contacts and material engineering. We then successfully demonstrated sub-40mV $σ$(V…
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Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is challenging with an integration of front side gate, a scaled back gated flow has been optimized by multiplying design of experiments around contacts and material engineering. We then successfully demonstrated sub-40mV $σ$(VTH_ON) in scaled IGZO nFETs. Regarding the performance and the VTH_ON control, a new IGZO phase is also reported. A model of dopants location is proposed to better explain the experimental results reported in literature.
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Submitted 25 November, 2024;
originally announced November 2024.
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Selecting Alternative Metals for Advanced Interconnects
Authors:
Jean-Philippe Soulié,
Kiroubanand Sankaran,
Benoit Van Troeye,
Alicja Leśniewska,
Olalla Varela Pedreira,
Herman Oprins,
Gilles Delie,
Claudia Fleischmann,
Lizzie Boakes,
Cédric Rolin,
Lars-Åke Ragnarsson,
Kristof Croes,
Seongho Park,
Johan Swerts,
Geoffrey Pourtois,
Zsolt Tőkei,
Christoph Adelmann
Abstract:
Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturization. The associated scaling challenges for interconnects are expected to further intensify in future CMOS technology nodes. As interconnect dimensions…
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Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturization. The associated scaling challenges for interconnects are expected to further intensify in future CMOS technology nodes. As interconnect dimensions approach the 10 nm scale, the limitations of conventional Cu dual-damascene metallization are becoming increasingly difficult to overcome, spurring over a decade of focused research into alternative metallization schemes. The selection of alternative metals is a highly complex process, requiring consideration of multiple criteria, including resistivity at reduced dimensions, reliability, thermal performance, process technology readiness, and sustainability. This tutorial introduces the fundamental criteria for benchmarking and selecting alternative metals and reviews the current state of the art in this field. It covers materials nearing adoption in high-volume manufacturing, materials currently under active research, and potential future directions for fundamental study. While early alternatives to Cu metallization have recently been introduced in commercial CMOS devices, the search for the optimal interconnect metal remains ongoing.
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Submitted 1 October, 2024; v1 submitted 13 June, 2024;
originally announced June 2024.
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Cu$_x$Al$_{1-x}$ films as Alternatives to Copper for Advanced Interconnect Metallization
Authors:
Jean-Philippe Soulié,
Kiroubanand Sankaran,
Geoffrey Pourtois,
Johan Swerts,
Zsolt Tőkei,
Christoph Adelmann
Abstract:
Cu$_x$Al$_{1-x}$ thin films with $0.2 \le x \le 0.7$ have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were used to obtain the Cu$_x$Al$_{1-x}$ electronic structure and cohesive energy to benchmark different intermetallics and their prospects for interconnect metallization. Next, thin Cu$_x$Al$_{1-x}$ films were deposited by P…
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Cu$_x$Al$_{1-x}$ thin films with $0.2 \le x \le 0.7$ have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were used to obtain the Cu$_x$Al$_{1-x}$ electronic structure and cohesive energy to benchmark different intermetallics and their prospects for interconnect metallization. Next, thin Cu$_x$Al$_{1-x}$ films were deposited by PVD with thicknesses in the range between 3 and 28 nm. The lowest resistivities of 9.5 $μΩ$cm were obtained for 28 nm thick stochiometric CuAl and CuAl$_2$ after 400$^\circ$C post-deposition annealing. Based on the experimental results, we discuss the main challenges for the studied aluminides from an interconnect point of view, namely the control of the film stoichiometry, the phase separation observed for off-stoichiometric CuAl and CuAl$_2$, as well as the presence of a nonstoichiometric surface oxide.
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Submitted 3 May, 2024;
originally announced May 2024.
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Properties of Nb\_xTi\_{(1-x)}N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits
Authors:
Daniel Pérez Lozano,
Jean-Philippe Soulié,
Blake Hodges,
Xiaoyu Piao,
Sabine O'Neal,
Anne-Marie Valente-Feliciano,
Quentin Herr,
Zsolt Tőkei,
Min-Soo Kim,
Anna Herr
Abstract:
Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS processes, ensuring uniformity, and optimizing the yield. This study explores the properties of NbxTi(1-x)N films fabricated by magnetron DC sputtering o…
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Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS processes, ensuring uniformity, and optimizing the yield. This study explores the properties of NbxTi(1-x)N films fabricated by magnetron DC sputtering on 300 mm Si wafers. As a promising alternative to traditional Nb in device manufacturing, NbxTi(1-x)N offers numerous advantages, including enhanced stability and scalability to smaller dimensions, in both processing and design. As a ternary material, NbxTi(1-x)N allows engineering material parameters by changing deposition conditions. The engineered properties can be used to modulate device parameters through the stack and mitigate failure modes. We report characterization of NbxTi(1-x)N films at less than 2% thickness variability, 2.4% Tc variability and 3% composition variability. The films material properties such as resistivity (140-375 Ωcm) and critical temperature Tc (4.6 K - 14.1 K) are correlated with stoichiometry and morphology of the films. Our results highlight the significant influence of deposition conditions on crystallographic texture along the films and its correlation with Tc.
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Submitted 17 November, 2023; v1 submitted 16 November, 2023;
originally announced November 2023.
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Al$_3$Sc thin films for advanced interconnect applications
Authors:
Jean-Philippe Soulié,
Kiroubanand Sankaran,
Valeria Founta,
Karl Opsomer,
Christophe Detavernier,
Joris Van de Vondel,
Geoffrey Pourtois,
Zsolt Tőkei,
Johan Swerts,
Christoph Adelmann
Abstract:
Al$_x$Sc$_{1-x}$ thin films have been studied with compositions around Al$_3$Sc ($x$ = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190°C, followed by recrystallization at 440°C. After annealing at 500°C, 24 nm thick stoichiometric Al$_3$Sc showed a resistivity of 12.6 $μΩ$cm, limited by a combination of grain…
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Al$_x$Sc$_{1-x}$ thin films have been studied with compositions around Al$_3$Sc ($x$ = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190°C, followed by recrystallization at 440°C. After annealing at 500°C, 24 nm thick stoichiometric Al$_3$Sc showed a resistivity of 12.6 $μΩ$cm, limited by a combination of grain boundary and point defect (disorder) scattering. Together with ab initio calculations that found a mean free path of the charge carriers of 7 nm for stoichiometric Al$_3$Sc, these results indicate that Al$_3$Sc bears promise for future interconnect metallization schemes. Challenges remain in minimizing the formation of secondary phases as well as in the control of the non-stoichiometric surface oxidation and interfacial reactions with underlying dielectrics.
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Submitted 23 January, 2024; v1 submitted 31 October, 2023;
originally announced October 2023.
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Ab initio screening of metallic MAX ceramics for advanced interconnect applications
Authors:
Kiroubanand Sankaran,
Kristof Moors,
Zsolt Tőkei,
Christoph Adelmann,
Geoffrey Pourtois
Abstract:
The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using automated first principles simulations based on density functional theory. The resistivity scaling potential of these compounds, i.e. the sensitivity of their resistivity to reduced line dimensions, has been benchmarked…
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The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using automated first principles simulations based on density functional theory. The resistivity scaling potential of these compounds, i.e. the sensitivity of their resistivity to reduced line dimensions, has been benchmarked against Cu and Ru by evaluating their transport properties within a semiclassical transport formalism. In addition, their cohesive energy has been assessed as a proxy for the resistance against electromigration and the need for diffusion barriers. The results indicate that numerous MAX phases show promise as conductors in interconnects of advanced CMOS technology nodes.
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Submitted 16 September, 2021; v1 submitted 13 November, 2020;
originally announced November 2020.
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Temperature-Dependent Resistivity of Alternative Metal Thin Films
Authors:
Marco Siniscalchi,
Davide Tierno,
Kristof Moors,
Zsolt Tokei,
Christoph Adelmann
Abstract:
The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the thickness whereas the TCR of Cu increases strongly with decreasing thickness. Thin W films show negative TCR values, which can be linked to high disorder. The results…
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The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the thickness whereas the TCR of Cu increases strongly with decreasing thickness. Thin W films show negative TCR values, which can be linked to high disorder. The results are qualitatively consistent with a temperature-dependent semiclassical thin film resistivity model that takes into account phonon, surface, and grain boundary scattering.
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Submitted 2 July, 2020; v1 submitted 28 April, 2020;
originally announced April 2020.
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Comprehensive Modeling of Graphene Resistivity
Authors:
Antonino Contino,
Ivan Ciofi,
Xiangyu Wu,
Inge Asselberghs,
Christopher J. Wilson,
Zsolt Tokei,
Guido Groeseneken,
Bart Soree
Abstract:
Since the first graphene layer was fabricated in the early 2000's, graphene properties have been studied extensively both experimentally and theoretically. However, when comparing the many resistivity models reported in literature, several discrepancies can be found, as well as a number of inconsistencies between formulas. In this paper, we revise the main scattering mechanisms in graphene, based…
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Since the first graphene layer was fabricated in the early 2000's, graphene properties have been studied extensively both experimentally and theoretically. However, when comparing the many resistivity models reported in literature, several discrepancies can be found, as well as a number of inconsistencies between formulas. In this paper, we revise the main scattering mechanisms in graphene, based on theory and goodness of fit to in-house experimental data. In particular, a step-by-step evaluation of the interaction between electrons and optical phonons is carried out, where we demonstrate that the process of optical phonon emission scattering is completely suppressed for all low-field applications and all temperatures in the range of interest, as opposed to what is often reported in literature. Finally, we identify the best scattering models based on the goodness of fit to experimental data.
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Submitted 1 December, 2017;
originally announced December 2017.
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Thickness dependence of the resistivity of Platinum group metal thin films
Authors:
Shibesh Dutta,
Kiroubanand Sankaran,
Kristof Moors,
Geoffrey Pourtois,
Sven Van Elshocht,
Jurgen Bommels,
Wilfried Vandervorst,
Zsolt Tokei,
Christoph Adelmann
Abstract:
We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses below about 5\,nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free…
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We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses below about 5\,nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free path, the data for Ru, Ir, and Cu were modeled within the semiclassical Mayadas--Shatzkes model [Phys. Rev. B 1, 1382 (1970)] to assess the combined contributions of surface and grain boundary scattering to the resistivity. For Ru, the modeling results indicated that surface scattering was strongly dependent on the surrounding material with nearly specular scattering at interfaces with SiO2 or air but with diffuse scattering at interfaces with TaN. The dependence of the thin film resistivity on the mean free path is also discussed within the Mayadas--Shatzkes model in consideration of the experimental findings.
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Submitted 21 August, 2017; v1 submitted 15 January, 2017;
originally announced January 2017.
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Electron relaxation times and resistivity in metallic nanowires due to tilted grain boundary planes
Authors:
Kristof Moors,
Bart Sorée,
Zsolt Tokei,
Wim Magnus
Abstract:
We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi's golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. G…
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We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi's golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. Grain boundaries tilted under the same angle or randomly tilted induce a resistivity decrease.
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Submitted 14 September, 2015; v1 submitted 27 March, 2015;
originally announced March 2015.
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Resistivity scaling and electron relaxation times in metallic nanowires
Authors:
Kristof Moors,
Bart Sorée,
Zsolt Tőkei,
Wim Magnus
Abstract:
We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation (RTA) of the distribution function and the effective mass approximation for the conducting el…
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We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation (RTA) of the distribution function and the effective mass approximation for the conducting electrons. The relaxation times are calculated exactly, using Fermi's golden rule, resulting in a correct relaxation time for every sub-band state contributing to the transport. In general, the relaxation time strongly depends on the sub-band state, something that remained unclear with the methods of previous work. The resistivity scaling is obtained for different roughness and grain-boundary properties, showing large differences in scaling behavior and relaxation times. Our model clearly indicates that the resistivity is dominated by grain-boundary scattering, easily surpassing the surface roughness contribution by a factor of 10.
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Submitted 9 June, 2015; v1 submitted 28 August, 2014;
originally announced August 2014.
