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Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te
Authors:
L. Kilanski,
M. Górska,
R. Szymczak,
W. Dobrowolski,
A. Podgórni,
A. Avdonin,
V. Domukhovski,
V. E. Slynko,
E. I. Slynko
Abstract:
Magnetic and transport properties of Ge(1-x-y)Mn(x)Eu(y)Te crystals with chemical compositions 0.041 < x < 0.092 and 0.010 < y < 0.043 are studied. Ferromagnetic order is observed at 150 < T < 160 K. Aggregation of magnetic ions into clusters is found to be the source of almost constant, composition independent Curie temperatures in our samples. Magnetotransport studies show the presence of both n…
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Magnetic and transport properties of Ge(1-x-y)Mn(x)Eu(y)Te crystals with chemical compositions 0.041 < x < 0.092 and 0.010 < y < 0.043 are studied. Ferromagnetic order is observed at 150 < T < 160 K. Aggregation of magnetic ions into clusters is found to be the source of almost constant, composition independent Curie temperatures in our samples. Magnetotransport studies show the presence of both negative (at T < 25 K) and linear positive (for 25<T <200 K) magnetoresistance effects (with amplitudes not exceeding 2%) in the studied alloy. Negative magnetoresistance detected at T < 25 K is found to be due to a tunneling of spin-polarized electrons between ferromagnetic clusters. A linear positive magnetoresistance is identified to be geometrical effect related with the presence of ferromagnetic clusters inside semiconductor matrix. The product of the polarization constant and the inter-grain exchange constant, J_P, varies between about 0.13 meV and 0.99 meV. Strong anomalous Hall effect (AHE) is observed for T < T_C with coefficients R_S independent of temperature. The scaling analysis of the AHE leads to a conclusion that this effect is due to a skew scattering mechanism.
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Submitted 20 June, 2014;
originally announced June 2014.
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Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties
Authors:
L. Kilanski,
K. Szałowski,
R. Szymczak,
M. Górska,
E. Dynowska,
P. Aleshkevych,
A. Podgórni,
A. Avdonin,
W. Dobrowolski,
I. V. Fedorchenko,
S. F. Marenkin
Abstract:
We present the studies of electrical transport and magnetic interactions in Zn_{1-x}Mn_{x}GeAs_{2} crystals with low Mn content 0 \leq x \leq 0.043. We show that the ionic-acceptor defects are mainly responsible for the strong p-type conductivity of our samples. We found that the negative magnetoresistance (MR) with maximum values of about -50% is related to the weak localization phenomena. The ma…
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We present the studies of electrical transport and magnetic interactions in Zn_{1-x}Mn_{x}GeAs_{2} crystals with low Mn content 0 \leq x \leq 0.043. We show that the ionic-acceptor defects are mainly responsible for the strong p-type conductivity of our samples. We found that the negative magnetoresistance (MR) with maximum values of about -50% is related to the weak localization phenomena. The magnetic properties of Zn1-xMnxGeAs2 samples show that the random Mn-distribution in the cation sites of the host lattice occurs only for the sample with the lowest Mn-content, x=0.003. The samples with higher Mn-content show a high level of magnetic frustration. Nonzero Curie-Weiss temperature observed in all our samples indicates that weak ferromagnetic (for x=0.003) or antiferromagnetic (for x>0.005) interactions with |Θ|<3 K are present in this system. The RKKY model, used to estimate the Mn-hole exchange integral Jpd for the diluted Zn/0.997/Mn/0.003/GeAs/2/ sample, makes possible to estimate the value of Jpd =(0.75+/-0.09) eV.
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Submitted 10 September, 2013; v1 submitted 14 June, 2013;
originally announced June 2013.
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Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system
Authors:
L. Kilanski,
R. Szymczak,
W. Dobrowolski,
A. Podgórni,
A. Avdonin,
V. E. Slynko,
E. I. Slynko
Abstract:
Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we attribute to two mechanisms i.e. weak localization occurring at low fields and spin disorder scattering giving contribution mainly at higher magnetic fields. A pronoun…
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Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we attribute to two mechanisms i.e. weak localization occurring at low fields and spin disorder scattering giving contribution mainly at higher magnetic fields. A pronounced hysteretic anomalous Hall effect (AHE) was observed. The estimated AHE coefficient shows a small temperature dependence and is dependent on Mn-content, with changes in the range of 10E-7 < R_S < 10E-6 m^3/C. The scaling law analysis has proven that the AHE in this system is due to the extrinsic mechanisms, mainly due to the skew scattering accompanied with the side jump processes.
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Submitted 16 November, 2012;
originally announced November 2012.
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Magnetically active vacancy related defects in irradiated GaN layers
Authors:
L. Kilanski,
F. Tuomisto,
R. Szymczak,
R. Kruszka
Abstract:
We present the studies of magnetic properties of 2 MeV 4He+-irradiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3...8.3x10^17 cm^-3 showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve…
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We present the studies of magnetic properties of 2 MeV 4He+-irradiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3...8.3x10^17 cm^-3 showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T = 5 K with coercive field of about H_C = 270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically-active defects with respect to the total Ga- vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.
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Submitted 28 August, 2012; v1 submitted 6 March, 2012;
originally announced March 2012.
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The magnetic interactions in spin-glasslike Ge/1-x-y/Sn/x/Mn/y/Te diluted magnetic semiconductor
Authors:
L. Kilanski,
R. Szymczak,
W. Dobrowolski,
K. Szałowski,
V. E. Slynko,
E. I. Slynko
Abstract:
We investigated the nature of the magnetic phase transition in the Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119. The DC magnetization measurements performed in the magnetic field up to 90 kOe and temperature range 2-200 K showed that the magnetic ordering at temperatures below T = 50 K exhibits features characterist…
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We investigated the nature of the magnetic phase transition in the Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119. The DC magnetization measurements performed in the magnetic field up to 90 kOe and temperature range 2-200 K showed that the magnetic ordering at temperatures below T = 50 K exhibits features characteristic for both spin-glass and ferromagnetic phases. The modified Sherrington - Southern model was applied to explain the observed transition temperatures. The calculations showed that the spin-glass state is preferred in the range of the experimental carrier concentrations and Mn content. The value of the Mn hole exchange integral was estimated to be J/pd/ = 0.45+/-0.05 eV. The experimental magnetization vs temperature curves were reproduced satisfactory using the non-interacting spin-wave theory with the exchange constant J/pd/ values consistent with those calculated using modified Sherrington - Southern model. The magnetization vs magnetic field curves showed nonsaturating behavior at magnetic fields B < 90 kOe indicating the presence of strong magnetic frustration in the system. The experimental results were reproduced theoretically with good accuracy using the molecular field approximation-based model of a disordered ferromagnet with long-range RKKY interaction.
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Submitted 14 March, 2012; v1 submitted 6 May, 2010;
originally announced May 2010.
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Spin Waves in the Ferromagnetic Ground State of the Kagome Staircase System Co3V2O8
Authors:
M. Ramazanoglu,
C. P. Adams,
J. P. Clancy,
A. J. Berlinsky,
Z. Yamani,
R. Szymczak,
H. Szymczak,
J. Fink-Finowicki,
B. D. Gaulin
Abstract:
Inelastic neutron scattering measurements were performed on single crystal Co3V2O8 wherein magnetic cobalt ions reside on distinct spine and cross-tie sites within kagome staircase planes. This system displays a rich magnetic phase diagram which culminates in a ferromagnetic ground state below Tc~6 K. We have studied the low-lying magnetic excitations in this phase within the kagome plane. Despi…
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Inelastic neutron scattering measurements were performed on single crystal Co3V2O8 wherein magnetic cobalt ions reside on distinct spine and cross-tie sites within kagome staircase planes. This system displays a rich magnetic phase diagram which culminates in a ferromagnetic ground state below Tc~6 K. We have studied the low-lying magnetic excitations in this phase within the kagome plane. Despite the complexity of the system at higher temperatures, linear spin-wave theory describes most of the quantitative detail of the inelastic neutron measurements. Our results show two spin-wave branches, the higher energy of which displays finite spin-wave lifetimes well below Tc, and negligible magnetic exchange coupling between Co moments on the spine sites.
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Submitted 11 April, 2008;
originally announced April 2008.
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Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As
Authors:
T. Figielski,
T. Wosinski,
O. Pelya,
J. Sadowski,
A. Morawski,
A. Makosa,
W. Dobrowolski,
R. Szymczak,
J. Wrobel
Abstract:
We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak localization (WL) effects at the lowest temperatures. In constricted samples, additionally, jumps of an enhanced conductance appear on the background of the negative MR, whose positions reflect the hysteresis of magne…
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We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak localization (WL) effects at the lowest temperatures. In constricted samples, additionally, jumps of an enhanced conductance appear on the background of the negative MR, whose positions reflect the hysteresis of magnetization. We argue that they are manifestation of a suppression of WL due to the nucleation of a domain wall in the constriction
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Submitted 9 September, 2004;
originally announced September 2004.
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Weak ferromagnetism in magnetoelectrics LiCoPO4 and LiNiPO4
Authors:
Yu. Kharchenko,
N. Kharchenko,
M. Baran,
R. Szymczak
Abstract:
The magnetic properties of the antiferromagnetic magnetoelectric single-crystals LiCoPO4 and LiNiPO4 were investigated using the SQUID-magnetometer. The magnetization was measured in a longitudinal experimental geometry (M // H) along the crystallographic axes a, b and c. The carried out investigations have shown that these compounds exhibit weak ferromagnetism. The weak ferromagnetic (WFM) mome…
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The magnetic properties of the antiferromagnetic magnetoelectric single-crystals LiCoPO4 and LiNiPO4 were investigated using the SQUID-magnetometer. The magnetization was measured in a longitudinal experimental geometry (M // H) along the crystallographic axes a, b and c. The carried out investigations have shown that these compounds exhibit weak ferromagnetism. The weak ferromagnetic (WFM) moment is directed along the antiferromagnetic axis in both crystals. But the temperature behaviours of the weak ferromagnetic moments in LiCoPO4 and LiNiPO4 are different. The weak ferromagnetic moment in LiCoPO4 changes non-monotonically. The essential horizontal negative bias of the magnetic hysteresis loop is observed in LiCoPO4
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Submitted 7 October, 2003;
originally announced October 2003.
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ab-plane tunneling and Andreev spectroscopy of superconducting gap and pseudogap in (Bi,Pb)2Sr2Ca2Cu3O10 and Bi2Sr2CaCu2O8
Authors:
A. I. D'yachenko,
V. Yu. Tarenkov,
R. Szymczak,
H. Szymczak,
A. V. Abal'oshev,
S. J. Lewandowski,
L. Leonyuk
Abstract:
We have measured the temperature dependence of gap features revealed by Andreev reflection Delta_s and by tunneling Delta in the ab-plane of optimal and slightly overdoped microcrystals of (BiPb)2Sr2Ca2Cu3O10 (Bi2223) with critical temperature Tc=110-115 K, and Bi2Sr2CaCu2O8 (Bi2212) with Tc=80-84 K. The tunneling conductance of Bi2223-Insulator-Bi2223 junction shows peaks at the 2Delta gap volt…
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We have measured the temperature dependence of gap features revealed by Andreev reflection Delta_s and by tunneling Delta in the ab-plane of optimal and slightly overdoped microcrystals of (BiPb)2Sr2Ca2Cu3O10 (Bi2223) with critical temperature Tc=110-115 K, and Bi2Sr2CaCu2O8 (Bi2212) with Tc=80-84 K. The tunneling conductance of Bi2223-Insulator-Bi2223 junction shows peaks at the 2Delta gap voltage, as well as dips and broad humps at other voltages. In Bi2223, similarly to the well known Bi2212 spectra, the energies corresponding to 2Delta, to the dip, and to the hump structure are in the ratio of 2:3:4. This confirms that the dip and hump features are generic to the high temperature superconductors, irrespective of the number of CuO2 layers or the BiO superstructure. On the other hand, in both compounds Delta(T) and Delta_s(T) dependences are completely different, and we conclude that the two entities have different nature.
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Submitted 23 October, 2002; v1 submitted 15 March, 2002;
originally announced March 2002.