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Long-range spatial extension of exciton states in van der Waals heterostructure
Authors:
Zhiwen Zhou,
E. A. Szwed,
W. J. Brunner,
H. Henstridge,
L. H. Fowler-Gerace,
L. V. Butov
Abstract:
Narrow lines in photoluminescence (PL) spectra of excitons are characteristic of low-dimensional semiconductors. These lines correspond to the emission of exciton states in local minima of a potential energy landscape formed by fluctuations of the local exciton environment in the heterostructure. The spatial extension of such states was in the nanometer range. In this work, we present studies of n…
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Narrow lines in photoluminescence (PL) spectra of excitons are characteristic of low-dimensional semiconductors. These lines correspond to the emission of exciton states in local minima of a potential energy landscape formed by fluctuations of the local exciton environment in the heterostructure. The spatial extension of such states was in the nanometer range. In this work, we present studies of narrow lines in PL spectra of spatially indirect excitons (IXs) in a MoSe$_2$/WSe$_2$ van der Waals heterostructure. The narrow lines vanish with increasing IX density. The disappearance of narrow lines correlates with the onset of IX transport, indicating that the narrow lines correspond to localized exciton states. The narrow lines extend over distances reaching several micrometers and over areas reaching ca. ten percent of the sample area. This macroscopic spatial extension of the exciton states, corresponding to the narrow lines, indicates a deviation of the exciton energy landscape from random potential and shows that the excitons are confined in moiré potential with a weak disorder.
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Submitted 27 August, 2025;
originally announced August 2025.
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Long-range ballistic transport of indirect excitons in a van der Waals heterostructure
Authors:
Zhiwen Zhou,
W. J. Brunner,
E. A. Szwed,
H. Henstridge,
L. H. Fowler-Gerace,
L. V. Butov
Abstract:
Exciton transport is fundamental for understanding transport phenomena in bosonic systems and for exploring excitation energy transfer in materials. Spatially indirect excitons (IXs) are composed of electrons and holes in separated layers. Long IX lifetimes allow them to form quantum bosonic states and travel long distances. In this work, we measured IX transport kinetics in a MoSe$_2$/WSe$_2$ van…
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Exciton transport is fundamental for understanding transport phenomena in bosonic systems and for exploring excitation energy transfer in materials. Spatially indirect excitons (IXs) are composed of electrons and holes in separated layers. Long IX lifetimes allow them to form quantum bosonic states and travel long distances. In this work, we measured IX transport kinetics in a MoSe$_2$/WSe$_2$ van der Waals heterostructure by time-resolved imaging of IX cloud expansion. We found efficient IX transport. Describing this transport as diffusive gives anomalously high diffusivity, orders of magnitude higher than for regular diffusive exciton transport in van der Waals heterostructures. The IX transport kinetics shows that this efficient IX transport is long-range ballistic transport.
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Submitted 12 September, 2025; v1 submitted 6 July, 2025;
originally announced July 2025.
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Mott transition in excitonic Bose polarons
Authors:
E. A. Szwed,
B. Vermilyea,
D. J. Choksy,
Zhiwen Zhou,
M. M. Fogler,
L. V. Butov,
K. W. Baldwin,
L. N. Pfeiffer
Abstract:
For a neutral system of positive and negative charges, such as atoms in a crystal, increasing the density causes the Mott transition from bound electrons to free electrons. The density of optically generated electron-hole systems can be controlled in situ by the power of optical excitation that enables the Mott transition from excitons, the bound pairs of electrons and holes, to free electrons and…
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For a neutral system of positive and negative charges, such as atoms in a crystal, increasing the density causes the Mott transition from bound electrons to free electrons. The density of optically generated electron-hole systems can be controlled in situ by the power of optical excitation that enables the Mott transition from excitons, the bound pairs of electrons and holes, to free electrons and holes with increasing density. These Mott transitions occur in systems of pairs of the same kind, such as atoms or excitons. However, a different type of the Mott transition can occur for Bose polarons. A Bose polaron is a mobile particle of one kind in a Bose gas of particles of another kind. For the Mott transition in polarons, the polaron states vanish with increasing density of the surrounding gas. In this paper, we present the observation of this type of the Mott transition and the measurement of the Mott transition parameter $n_{\rm M}^{1/2} a_{\rm B}$ in 2D excitonic Bose polarons.
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Submitted 12 April, 2025; v1 submitted 9 April, 2025;
originally announced April 2025.
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Excitonic Bose-polarons in electron-hole bilayers
Authors:
E. A. Szwed,
B. Vermilyea,
D. J. Choksy,
Zhiwen Zhou,
M. M. Fogler,
L. V. Butov,
D. K. Efimkin,
K. W. Baldwin,
L. N. Pfeiffer
Abstract:
Bose polarons are mobile impurities dressed by density fluctuations of a surrounding degenerate Bose gas. These many-body objects have been realized in ultracold atomic gasses and become a subject of intensive studies. In this work, we show that excitons in electron-hole bilayers offer new opportunities for exploring polarons in strongly interacting, highly tunable bosonic systems. We found that B…
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Bose polarons are mobile impurities dressed by density fluctuations of a surrounding degenerate Bose gas. These many-body objects have been realized in ultracold atomic gasses and become a subject of intensive studies. In this work, we show that excitons in electron-hole bilayers offer new opportunities for exploring polarons in strongly interacting, highly tunable bosonic systems. We found that Bose polarons are formed by spatially direct excitons immersed in degenerate Bose gases of spatially indirect excitons (IXs). We detected both attractive and repulsive Bose polarons by measuring photoluminescence excitation spectra. We controlled the density of IX Bose gas by optical excitation and observed an enhancement of the energy splitting between attractive and repulsive Bose polarons with increasing IX density, in agreement with our theoretical calculations.
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Submitted 21 June, 2024;
originally announced June 2024.
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Long-distance decay-less spin transport in indirect excitons in a van der Waals heterostructure
Authors:
Zhiwen Zhou,
E. A. Szwed,
D. J. Choksy,
L. H. Fowler-Gerace,
L. V. Butov
Abstract:
In addition to its fundamental interest, the long-distance spin transport with suppressed spin losses is essential for spintronic devices. However, the spin relaxation caused by scattering of the particles carrying the spin, limits the spin transport. We explored spatially indirect excitons (IXs), also known as interlayer excitons, in van der Waals heterostructures (HS) composed of atomically thin…
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In addition to its fundamental interest, the long-distance spin transport with suppressed spin losses is essential for spintronic devices. However, the spin relaxation caused by scattering of the particles carrying the spin, limits the spin transport. We explored spatially indirect excitons (IXs), also known as interlayer excitons, in van der Waals heterostructures (HS) composed of atomically thin layers of transition-metal dichalcogenides (TMD) as spin carries. TMD HS also offer coupling of spin and valley transport. We observed the long-distance spin transport with the decay distances exceeding 100~$μ$m and diverging so spin currents show no decay in the HS. With increasing IX density, we observed spin localization, then long-distance spin transport, and then reentrant spin localization, in agreement with the Bose-Hubbard theory prediction for superfluid and insulating phases in periodic potentials due to moiré superlattices. The suppression of scattering in exciton superfluid suppresses the spin relaxation and enables the long-distance spin transport. This mechanism of protection against the spin relaxation makes IXs a platform for the realization of long-distance decay-less spin transport.
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Submitted 6 June, 2024;
originally announced June 2024.
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Transport and localization of indirect excitons in a van der Waals heterostructure
Authors:
L. H. Fowler-Gerace,
Zhiwen Zhou,
E. A. Szwed,
D. J. Choksy,
L. V. Butov
Abstract:
Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, allow implementing both quantum exciton systems and long-range exciton transport. Van der Waals heterostructures (HS) composed of atomically thin layers of transition-metal dichalcogenides (TMD) offer the opportunity to explore IXs in moiré superlattices. The moiré IXs in TMD HS form the materials platform for…
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Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, allow implementing both quantum exciton systems and long-range exciton transport. Van der Waals heterostructures (HS) composed of atomically thin layers of transition-metal dichalcogenides (TMD) offer the opportunity to explore IXs in moiré superlattices. The moiré IXs in TMD HS form the materials platform for exploring the Bose-Hubbard physics and superfluid and insulating phases in periodic potentials. IX transport in TMD HS was intensively studied and diffusive IX transport with $1/e$ decay distances $d_{1/e}$ up to $\sim 3$ $μ$m was realized. In this work, we present in MoSe$_2$/WSe$_2$ HS the IX long-range transport with $d_{1/e}$ exceeding 100 $μ$m and diverging at the optical excitation resonant to spatially direct excitons. The IX long-range transport vanishes at high temperatures. With increasing IX density, IX localization, then IX long-range transport, and then IX reentrant localization is observed. The results are in qualitative agreement with the Bose-Hubbard theory of bosons in periodic potentials predicting superfluid at $N \sim 1/2$ and insulating at $N \sim 0$ and $N \sim 1$ phases for the number of bosons per site of the periodic potential $N$.
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Submitted 2 July, 2023;
originally announced July 2023.
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Fermi edge singularity in neutral electron-hole system
Authors:
D. J. Choksy,
E. A. Szwed,
L. V. Butov,
K. W. Baldwin,
L. N. Pfeiffer
Abstract:
In neutral dense electron-hole (e-h) systems at low temperatures, theory predicts Cooper-pair-like excitons at the Fermi energy and a BCS-like exciton condensation. Optical excitation allows creating e-h systems with the densities controlled by the excitation power. However, the intense optical excitations required to achieve high densities cause substantial heating of the e-h system that prevents…
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In neutral dense electron-hole (e-h) systems at low temperatures, theory predicts Cooper-pair-like excitons at the Fermi energy and a BCS-like exciton condensation. Optical excitation allows creating e-h systems with the densities controlled by the excitation power. However, the intense optical excitations required to achieve high densities cause substantial heating of the e-h system that prevents the realization of dense and cold e-h systems in conventional semiconductors. In this work, we study e-h systems created by optical excitation in separated electron and hole layers. The layer separation increases the e-h recombination time and, in turn, the density for a given optical excitation by orders of magnitude and, as a result, enables the realization of the dense and cold e-h system. We found a strong enhancement of photoluminescence intensity at the Fermi energy of the neutral dense ultracold e-h system that evidences the emergence of excitonic Fermi edge singularity due to the Cooper-pair-like excitons at the Fermi energy.
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Submitted 13 September, 2022;
originally announced September 2022.
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Long-range quantum transport of indirect excitons in van der Waals heterostructure
Authors:
L. H. Fowler-Gerace,
Zhiwen Zhou,
E. A. Szwed,
L. V. Butov
Abstract:
Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, make possible long-range IX propagation. Van der Waals heterostructures composed of atomically thin layers of transition-metal dichalcogenides (TMDs) give an opportunity to realize excitons with high binding energies and provide a materials platform for the realization of both excitonic quantum phenomena and ex…
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Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, make possible long-range IX propagation. Van der Waals heterostructures composed of atomically thin layers of transition-metal dichalcogenides (TMDs) give an opportunity to realize excitons with high binding energies and provide a materials platform for the realization of both excitonic quantum phenomena and excitonic devices. Propagation of IXs in TMD heterostructures is intensively studied. However, in spite of long IX lifetimes, orders of magnitude longer than lifetimes of spatially direct excitons (DXs), a relatively short-range IX propagation with the $1/e$ decay distances $d_{1/e}$ up to few $μ$m was reported in the studies of TMD heterostructures. The short-range of IX propagation originates from in-plane potentials, which localize excitons and suppress exciton transport. In particular, significant in-plane moiré potentials predicted in TMD heterostructures can cause an obstacle for IX propagation. In this work, we realize in a MoSe$_2$/WSe$_2$ heterostructure a macroscopically long-range IX propagation with $d_{1/e}$ reaching $\sim 100$ $μ$m. The strong enhancement of IX propagation is realized using an optical excitation resonant to DXs in the heterostructure. The strong enhancement of IX propagation originates from the suppression of IX localization and scattering and is observed in the quantum regime.
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Submitted 3 June, 2022; v1 submitted 20 April, 2022;
originally announced April 2022.