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Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
Authors:
Patricia Almeida Carvalho,
Annett Thørgesen,
Quanbao Ma,
Daniel Nielsen Wright,
Spyros Diplas,
Augustinas Galeckas,
Alexander Azarov,
Valdas Jokubavicius,
Jianwu Sun,
Mikael Syväjärvi,
Bengt Gunnar Svensson,
Ole Martin Løvvik
Abstract:
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission…
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Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission electron microscopy and secondary-ion mass spectrometry are used to investigate precipitation mechanisms in B-implanted 3C-SiC as a function of temperature. Point-defect clustering was detected after annealing at 1273 K, while stacking faults, B-rich precipitates and dislocation networks developed in the 1573 - 1773 K range. The precipitates adopted the rhombohedral B13C2 structure and trapped B up to 1773 K. Above this temperature, higher solubility reduced precipitation and free B diffused out of the implantation layer. Dopant concentrations E19 at.cm-3 were achieved at 1873 K.
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Submitted 10 December, 2018; v1 submitted 17 April, 2018;
originally announced April 2018.
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Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
Authors:
David J. Christle,
Paul V. Klimov,
Charles F. de las Casas,
Krisztián Szász,
Viktor Ivády,
Valdas Jokubavicius,
Jawad ul Hassan,
Mikael Syväjärvi,
William F. Koehl,
Takeshi Ohshima,
Nguyen T. Son,
Erik Janzén,
Ádám Gali,
David D. Awschalom
Abstract:
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here we demonstra…
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The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here we demonstrate a high-fidelity spin-to-photon interface in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin-mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on shows promise for future quantum networks based on SiC defects.
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Submitted 25 February, 2017; v1 submitted 23 February, 2017;
originally announced February 2017.
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Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
Authors:
M. Yang,
O. Couturaud,
W. Desrat,
C. Consejo,
D. Kazazis,
R. Yakimova,
M. Syväjärvi,
M. Goiran,
J. Béard,
P. Frings,
M. Pierre,
A. Cresti,
W. Escoffier,
B. Jouault
Abstract:
We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $ν=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a $1/B$ periodicity and an anomalous phase, which we relate to the presence o…
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We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $ν=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a $1/B$ periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current.
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Submitted 24 November, 2016;
originally announced November 2016.
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Quantum Resistance Standard Based on Epitaxial Graphene
Authors:
Alexander Tzalenchuk,
Samuel Lara-Avila,
Alexei Kalaboukhov,
Sara Paolillo,
Mikael Syväjärvi,
Rositza Yakimova,
Olga Kazakova,
T. J. B. M. Janssen,
Vladimir Fal'ko,
Sergey Kubatkin
Abstract:
We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resis…
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We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics.
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Submitted 7 September, 2009;
originally announced September 2009.
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SiC Graphene Suitable For Quantum Hall Resistance Metrology
Authors:
Samuel Lara-Avila,
Alexei Kalaboukhov,
Sara Paolillo,
Mikael Syväjärvi,
Rositza Yakimova,
Vladimir Fal'ko,
Alexander Tzalenchuk,
Sergey Kubatkin
Abstract:
We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several…
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We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene.
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Submitted 7 September, 2009;
originally announced September 2009.
