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$g$-factor engineering with InAsSb alloys toward zero band gap limit
Authors:
Yuxuan Jiang,
Maksim Ermolaev,
Seongphill Moon,
Gela Kipshidze,
Gregory Belenky,
Stefan Svensson,
Mykhaylo Ozerov,
Dmitry Smirnov,
Zhigang Jiang,
Sergey Suchalkin
Abstract:
Band gap is known as an effective parameter for tuning the Lande $g$-factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large $g$-factor of $g\approx -90$ at the minimum band gap o…
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Band gap is known as an effective parameter for tuning the Lande $g$-factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large $g$-factor of $g\approx -90$ at the minimum band gap of $\sim 0.1$ eV, which is almost twice that in bulk InSb is found. Further analysis to the zero gap limit reveals a possible gigantic $g$-factor of $g\approx -200$ with a peculiar relativistic Zeeman effect that disperses as the square root of magnetic field. Such a $g$-factor enhancement toward the narrow gap limit cannot be quantitatively described by the conventional Roth formula, as the orbital interaction effect between the nearly triply degenerated bands becomes the dominant source for the Zeeman splitting. These results may provide new insights into realizing large $g$-factors and spin polarized states in semiconductors and topological materials.
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Submitted 9 September, 2023;
originally announced September 2023.
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Superconducting proximity effect in InAsSb surface quantum wells with in-situ Al contact
Authors:
William Mayer,
William F. Schiela,
Joseph Yuan,
Mehdi Hatefipour,
Wendy L. Sarney,
Stefan P. Svensson,
Asher C. Leff,
Tiago Campos,
Kaushini S. Wickramasinghe,
Matthieu C. Dartiailh,
Igor Zutic,
Javad Shabani
Abstract:
We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable prop…
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We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization we observe high-quality interfaces and strong spin-orbit coupling. We fabricate Josephson junctions based on InAs$_{0.5}$Sb$_{0.5}$ quantum wells and observe strong proximity effect. These junctions exhibit product of normal resistance and critical current, $I_{c}R_{N} = \SI{270}{\micro V}$, and excess current, $I_{ex}R_{N} = \SI{200}{\micro V}$ at contact separations of 500~nm. Both of these quantities demonstrate a robust and long-range proximity effect with highly-transparent contacts.
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Submitted 31 March, 2020; v1 submitted 27 September, 2019;
originally announced September 2019.
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Dirac energy spectrum and inverted band gap in metamorphic InAsSb/InSb superlattices
Authors:
Sergey Suchalkin,
Maksim Ermolaev,
Tonica Valla,
Gela Kipshidze,
Dmitry Smirnov,
Seongphill Moon,
Mykhaylo Ozerov,
Zhigang Jiang,
Yuxuan Jiang,
Stefan P. Svensson,
Wendy L. Sarney,
Gregory Belenky
Abstract:
A Dirac-type energy spectrum was demonstrated in gapless ultra-short-period metamorphic InAsSb/InSb superlattices by angle-resolved photoemission spectroscopy (ARPES_ measurements. The Fermi velocity value 7.4x10^5 m/s in a gapless superlattice with a period of 6.2nm is in a good agreement with the results of magneto-absorption experiments. An "inverted" bandgap opens in the center of the Brilloui…
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A Dirac-type energy spectrum was demonstrated in gapless ultra-short-period metamorphic InAsSb/InSb superlattices by angle-resolved photoemission spectroscopy (ARPES_ measurements. The Fermi velocity value 7.4x10^5 m/s in a gapless superlattice with a period of 6.2nm is in a good agreement with the results of magneto-absorption experiments. An "inverted" bandgap opens in the center of the Brillouin zone at higher temperatures and in the SL with a larger period. The ARPES data indicate the presence of a surface electron accumulation layer
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Submitted 26 September, 2019;
originally announced September 2019.
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Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
Authors:
J. G. Gluschke,
J. Seidl,
A. M. Burke,
R. W. Lyttleton,
D. J. Carrad,
A. R. Ullah,
S. Fahlvik Svensson,
S. Lehmann,
H. Linke,
A. P. Micolich
Abstract:
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control…
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We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300 nm, 200 nm, and 150 nm gate length. Our method enables us to achieve sub-threshold swings as low as 38 mV/dec at 77 K for a 150 nm gate length.
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Submitted 8 October, 2018;
originally announced October 2018.
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Metamorphic InAs1-xSbx/InAs1-ySby superlattices with ultra-low bandgap as a Dirac material
Authors:
Sergey Suchalkin,
Gregory Belenky,
Maksim Ermolaev,
Seongphill Moon,
Yuxuan Jiang,
David Graf,
Dmitry Smirnov,
Boris Laikhtman,
Leon Shterengas,
Gela Kipshidze,
Stefan P. Svensson,
Wendy L. Sarney
Abstract:
It was experimentally demonstrated that short-period metamorphic InAs1-xSbx/InAs1-ySby superlattices with ultra low bandgap have properties of a Dirac material. Cyclotron resonance and interband magneto-absorption peaks in superlattices with ultra-low bandgaps demonstrate a square root dependence on the magnetic field for a range up to 16 T (energy range up to 300meV). This directly indicates the…
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It was experimentally demonstrated that short-period metamorphic InAs1-xSbx/InAs1-ySby superlattices with ultra low bandgap have properties of a Dirac material. Cyclotron resonance and interband magneto-absorption peaks in superlattices with ultra-low bandgaps demonstrate a square root dependence on the magnetic field for a range up to 16 T (energy range up to 300meV). This directly indicates the linearity of the electron dispersion. The Fermi velocity can be controlled by varying the overlap between electron and hole states in the superlattice. The dependence of the cyclotron resonance energy on the magnetic field parallel to the superlattice plane demonstrates that the electron dispersion in the growth direction can be characterized by an effective mass of 0.028m0 in a superlattice with a period of 6 nm and 0.045m0 in a superlattice with a period of 7.5 nm. Extreme design flexibility makes the short-period metamorphic InAs1-xSbx/InAs1-ySby superlattice a new prospective platform for studying the effects of charge carrier chirality and topologically nontrivial states in structures with the inverted bandgaps.
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Submitted 6 May, 2017;
originally announced May 2017.
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Nonlinear thermoelectric response due to energy-dependent transport properties of a quantum dot
Authors:
Artis Svilans,
Adam M. Burke,
Sofia Fahlvik Svensson,
Martin Leijnse,
Heiner Linke
Abstract:
Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy dependence, the thermoelectric response of quantum dots is expected to be nonlinear with respect to an applied thermal bias. However, until now this effect has been cha…
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Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy dependence, the thermoelectric response of quantum dots is expected to be nonlinear with respect to an applied thermal bias. However, until now this effect has been challenging to observe because, first, it is experimentally difficult to apply a sufficiently large thermal bias at the nanoscale and, second, it is difficult to distinguish thermal bias effects from purely temperature-dependent effects due to overall heating of a device. Here we take advantage of a novel thermal biasing technique and demonstrate a nonlinear thermoelectric response in a quantum dot which is defined in a heterostructured semiconductor nanowire. We also show that a theoretical model based on the Master equations fully explains the observed nonlinear thermoelectric response given the energy-dependent transport properties of the quantum dot.
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Submitted 28 October, 2015;
originally announced October 2015.
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InAs nanowire transistors with multiple, independent wrap-gate segments
Authors:
A. M. Burke,
D. J. Carrad,
J. G. Gluschke,
K. Storm,
S. Fahlvik Svensson,
H. Linke,
L. Samuelson,
A. P. Micolich
Abstract:
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabri…
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We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favourable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.
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Submitted 7 May, 2015;
originally announced May 2015.
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Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics
Authors:
Sofia Fahlvik Svensson,
Adam M. Burke,
Damon J. Carrad,
Martin Leijnse,
Heiner Linke,
Adam P. Micolich
Abstract:
We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a conventional doped substrate gate and the local disorder potential at temperatures below 200 Kelvin, which we characterize in detail by combining conductance and…
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We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a conventional doped substrate gate and the local disorder potential at temperatures below 200 Kelvin, which we characterize in detail by combining conductance and thermovoltage measurements with modeling. Our results demonstrate that local polymer electrolyte gates are compatible with nanowire thermoelectrics, where they offer the advantage of a very low thermal conductivity, and hold great potential towards setting the optimal operating point for solid-state cooling applications.
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Submitted 11 November, 2014;
originally announced November 2014.
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Nonlinear thermovoltage and thermocurrent in quantum dots
Authors:
Sofia Fahlvik Svensson,
Eric A Hoffmann,
Natthapon Nakpathomkun,
Phillip M Wu,
Hongqi Xu,
Henrik A Nilsson,
David Sánchez,
Vyacheslavs Kashcheyevs,
Heiner Linke
Abstract:
Quantum dots are model systems for quantum thermoelectric behavior because of the ability to control and measure the effects of electron-energy filtering and quantum confinement on thermoelectric properties. Interestingly, nonlinear thermoelectric properties of such small systems can modify the efficiency of thermoelectric power conversion. Using quantum dots embedded in semiconductor nanowires, w…
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Quantum dots are model systems for quantum thermoelectric behavior because of the ability to control and measure the effects of electron-energy filtering and quantum confinement on thermoelectric properties. Interestingly, nonlinear thermoelectric properties of such small systems can modify the efficiency of thermoelectric power conversion. Using quantum dots embedded in semiconductor nanowires, we measure thermovoltage and thermocurrent that are strongly nonlinear in the applied thermal bias. We show that most of the observed nonlinear effects can be understood in terms of a renormalization of the quantum-dot energy levels as a function of applied thermal bias and provide a theoretical model of the nonlinear thermovoltage taking renormalization into account. Furthermore, we propose a theory that explains a possible source of the observed, pronounced renormalization effect by the melting of Kondo correlations in the mixed-valence regime. The ability to control nonlinear thermoelectric behavior expands the range in which quantum thermoelectric effects may be used for efficient energy conversion.
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Submitted 2 July, 2013;
originally announced July 2013.
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Lineshape of the thermopower of quantum dots
Authors:
S. Fahlvik Svensson,
A. I. Persson,
E. A. Hoffmann,
N. Nakpathomkun,
H. A. Nilsson,
H. Q. Xu,
L. Samuelson,
H. Linke
Abstract:
Quantum dots are an important model system for thermoelectric phenomena, and may be used to enhance the thermal-to-electric energy conversion efficiency in functional materials. It is therefore important to obtain a detailed understanding of a quantum-dot's thermopower as a function of the Fermi energy. However, so far it has proven difficult to take effects of co-tunnelling into account in the in…
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Quantum dots are an important model system for thermoelectric phenomena, and may be used to enhance the thermal-to-electric energy conversion efficiency in functional materials. It is therefore important to obtain a detailed understanding of a quantum-dot's thermopower as a function of the Fermi energy. However, so far it has proven difficult to take effects of co-tunnelling into account in the interpretation of experimental data. Here we show that a single-electron tunnelling model, using knowledge of the dot's electrical conductance which in fact includes all-order co-tunneling effects, predicts the thermopower of quantum dots as a function of the relevant energy scales, in very good agreement with experiment.
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Submitted 3 October, 2011;
originally announced October 2011.
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Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3
Authors:
P. D. C. King,
R. C. Hatch,
M. Bianchi,
R. Ovsyannikov,
C. Lupulescu,
G. Landolt,
B. Slomski,
J. H. Dil,
D. Guan,
J. L. Mi,
E. D. L. Rienks,
J. Fink,
A. Lindblad,
S. Svensson,
S. Bao,
G. Balakrishnan,
B. B. Iversen,
J. Osterwalder,
W. Eberhardt,
F. Baumberger,
Ph. Hofmann
Abstract:
We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi$_2$Se$_3$ from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achieved which are at least an order-of-magnitude larger than in other semiconductors. Together these results show promise for the miniaturization of spint…
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We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi$_2$Se$_3$ from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achieved which are at least an order-of-magnitude larger than in other semiconductors. Together these results show promise for the miniaturization of spintronic devices to the nanoscale and their operation at room temperature.
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Submitted 26 August, 2011; v1 submitted 16 March, 2011;
originally announced March 2011.
