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Compromise-Free Scaling of Qubit Speed and Coherence
Authors:
Miguel J. Carballido,
Simon Svab,
Rafael S. Eggli,
Taras Patlatiuk,
Pierre Chevalier Kwon,
Jonas Schuff,
Rahel M. Kaiser,
Leon C. Camenzind,
Ang Li,
Natalia Ares,
Erik P. A. M Bakkers,
Stefano Bosco,
J. Carlos Egues,
Daniel Loss,
Dominik M. Zumbühl
Abstract:
Across a broad range of qubits, a pervasive trade-off becomes obvious: increased coherence seems to be only possible at the cost of qubit speed. This is consistent with the notion that protecting a qubit from its noisy surroundings also limits the control over it. Indeed, from ions to atoms, to superconductors and spins, the leading qubits share a similar Q-factor - the product of speed and cohere…
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Across a broad range of qubits, a pervasive trade-off becomes obvious: increased coherence seems to be only possible at the cost of qubit speed. This is consistent with the notion that protecting a qubit from its noisy surroundings also limits the control over it. Indeed, from ions to atoms, to superconductors and spins, the leading qubits share a similar Q-factor - the product of speed and coherence time - even though the speed and coherence of various qubits can differ by up to 8 orders of magnitude. This is the qubit speed-coherence dilemma: qubits are either coherent but slow or fast but short-lived. Here, we demonstrate a qubit for which we can triple the speed while simultaneously quadrupling the Hahn-echo coherence time when tuning a local electric field. In this way, the qubit speed and coherence scale together without compromise on either quantity, boosting the Q-factor by over an order of magnitude. Our qubit is a hole spin in a Ge/Si core/shell nanowire providing strong 1D confinement, resulting in the direct Rashba spin-orbit interaction. Due to Heavy-hole light-hole mixing a maximum of the spin-orbit strength is reached at finite electrical field. At the local maximum, charge fluctuations are decoupled from the qubit and coherence is enhanced, yet the drive speed becomes maximal. Our proof-of-concept experiment shows that a properly engineered qubit can be made faster and simultaneously more coherent, removing an important roadblock. Further, it demonstrates that through all-electrical control a qubit can be sped up, without coupling more strongly to the electrical noise environment. As charge fluctuators are unavoidable in semiconductors and all-electrical control is highly scalable, our results improve the prospects for quantum computing in Si and Ge.
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Submitted 22 May, 2024; v1 submitted 11 February, 2024;
originally announced February 2024.
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Fully autonomous tuning of a spin qubit
Authors:
Jonas Schuff,
Miguel J. Carballido,
Madeleine Kotzagiannidis,
Juan Carlos Calvo,
Marco Caselli,
Jacob Rawling,
David L. Craig,
Barnaby van Straaten,
Brandon Severin,
Federico Fedele,
Simon Svab,
Pierre Chevalier Kwon,
Rafael S. Eggli,
Taras Patlatiuk,
Nathan Korda,
Dominik Zumbühl,
Natalia Ares
Abstract:
Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, the development of large-scale semiconductor quantum circuits is still limited by challenges in efficiently tuning and operating these circuits. Identifying optimal operating conditions for these qubits is complex, involving the exploration of vast parameter spaces…
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Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, the development of large-scale semiconductor quantum circuits is still limited by challenges in efficiently tuning and operating these circuits. Identifying optimal operating conditions for these qubits is complex, involving the exploration of vast parameter spaces. This presents a real 'needle in the haystack' problem, which, until now, has resisted complete automation due to device variability and fabrication imperfections. In this study, we present the first fully autonomous tuning of a semiconductor qubit, from a grounded device to Rabi oscillations, a clear indication of successful qubit operation. We demonstrate this automation, achieved without human intervention, in a Ge/Si core/shell nanowire device. Our approach integrates deep learning, Bayesian optimization, and computer vision techniques. We expect this automation algorithm to apply to a wide range of semiconductor qubit devices, allowing for statistical studies of qubit quality metrics. As a demonstration of the potential of full automation, we characterise how the Rabi frequency and g-factor depend on barrier gate voltages for one of the qubits found by the algorithm. Twenty years after the initial demonstrations of spin qubit operation, this significant advancement is poised to finally catalyze the operation of large, previously unexplored quantum circuits.
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Submitted 6 February, 2024;
originally announced February 2024.
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Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots
Authors:
Rafael S. Eggli,
Simon Svab,
Taras Patlatiuk,
Dominique A. Trüssel,
Miguel J. Carballido,
Pierre Chevalier Kwon,
Simon Geyer,
Ang Li,
Erik P. A. M. Bakkers,
Andreas V. Kuhlmann,
Dominik M. Zumbühl
Abstract:
Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deterior…
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Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deteriorate and fail at temperatures below 10 K and in magnetic fields. Here, we investigate a varactor based on strontium titanate with hyperabrupt capacitance-voltage characteristic, that is, a capacitance tunability similar to the best gallium arsenide-based devices. The varactor design introduced here is compact, scalable and easy to wirebond with an accessible capacitance range from 45 pF to 3.2 pF. We tune a resonant inductor-capacitor circuit to perfect impedance matching and observe robust, temperature and field independent matching down to 11 mK and up to 2 T in-plane field. Finally, we perform gate-dispersive charge sensing on a germanium/silicon core/shell nanowire hole double quantum dot, paving the way towards gate-based single-shot spin readout. Our results bring small, magnetic field-resilient, highly tunable varactors to mK temperatures, expanding the toolbox of cryo-radio frequency applications.
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Submitted 6 December, 2023; v1 submitted 6 March, 2023;
originally announced March 2023.
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Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
Authors:
B. Severin,
D. T. Lennon,
L. C. Camenzind,
F. Vigneau,
F. Fedele,
D. Jirovec,
A. Ballabio,
D. Chrastina,
G. Isella,
M. de Kruijf,
M. J. Carballido,
S. Svab,
A. V. Kuhlmann,
F. R. Braakman,
S. Geyer,
F. N. M. Froning,
H. Moon,
M. A. Osborne,
D. Sejdinovic,
G. Katsaros,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares
Abstract:
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra…
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The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.
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Submitted 27 July, 2021;
originally announced July 2021.
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Isotropic and Anisotropic g-factor Corrections in GaAs Quantum Dots
Authors:
Leon C. Camenzind,
Simon Svab,
Peter Stano,
Liuqi Yu,
Jeramy D. Zimmerman,
Arthur C. Gossard,
Daniel Loss,
Dominik M. Zumbühl
Abstract:
We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength w…
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We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength which allows us to extract the g-factor. The measured g-factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g-factor. Because this implies a dependence of the spin splitting on the magnetic field direction, these findings are of significance for spin qubits in GaAs quantum dots.
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Submitted 21 October, 2020;
originally announced October 2020.
