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Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation
Authors:
Yijing Liu,
Christopher Yang,
Gabriel Gaertner,
John Huckabee,
Alexey V. Suslov,
Gil Refael,
Frederik Nathan,
Cyprian Lewandowski,
Luis E. F. Foa Torres,
Iliya Esin,
Paola Barbara,
Nikolai G. Kalugin
Abstract:
Light-induced phenomena in materials can exhibit exotic behavior that extends beyond equilibrium properties, offering new avenues for understanding and controlling electronic phases. So far, non-equilibrium phenomena in solids have been predominantly explored using femtosecond laser pulses, which generate transient, ultra-fast dynamics. Here, we investigate the steady non-equilibrium regime in gra…
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Light-induced phenomena in materials can exhibit exotic behavior that extends beyond equilibrium properties, offering new avenues for understanding and controlling electronic phases. So far, non-equilibrium phenomena in solids have been predominantly explored using femtosecond laser pulses, which generate transient, ultra-fast dynamics. Here, we investigate the steady non-equilibrium regime in graphene induced by a continuous-wave (CW) mid-infrared laser. Our transport measurements reveal signatures of a long-lived Floquet phase, where a non-equilibrium electronic population is stabilized by the interplay between coherent photoexcitation and incoherent phonon cooling. The observation of non-equilibrium steady states using CW lasers opens a new regime for low-temperature Floquet phenomena, paving the way toward Floquet engineering of steady-state phases of matter.
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Submitted 17 October, 2024;
originally announced October 2024.
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High-field immiscibility of electrons belonging to adjacent twinned bismuth crystals
Authors:
Yuhao Ye,
Akiyoshi Yamada,
Yuto Kinoshita,
Jinhua Wang,
Pan Nie,
Liangcai Xu,
Huakun Zuo,
Masashi Tokunaga,
Neil Harrison,
Ross D. McDonald,
Alexey V. Suslov,
Arzhang Ardavan,
Moon-Sun Nam,
David LeBoeuf,
Cyril Proust,
Benoît Fauqué,
Yuki Fuseya,
Zengwei Zhu,
Kamran Behnia
Abstract:
Bulk bismuth has a complex Landau spectrum. The small effective masses and the large g-factors are anisotropic. The chemical potential drifts at high magnetic fields. Moreover, twin boundaries further complexify the interpretation of the data by producing extra anomalies in the extreme quantum limit. Here, we present a study of angle dependence of magnetoresistance up to 65 T in bismuth complement…
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Bulk bismuth has a complex Landau spectrum. The small effective masses and the large g-factors are anisotropic. The chemical potential drifts at high magnetic fields. Moreover, twin boundaries further complexify the interpretation of the data by producing extra anomalies in the extreme quantum limit. Here, we present a study of angle dependence of magnetoresistance up to 65 T in bismuth complemented with Nernst, ultrasound, and magneto-optic data. All observed anomalies can be explained in a single-particle picture of a sample consisting of two twinned crystals tilted by 108$^{\circ}$ and with two adjacent crystals keeping their own chemical potentials despite a shift between chemical potentials as large as 68 meV at 65 T. This implies an energy barrier between adjacent twinned crystals reminiscent of a metal-semiconductor Schottky barrier or a p-n junction. We argue that this barrier is built by accumulating charge carriers of opposite signs across a twin boundary.
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Submitted 15 February, 2024; v1 submitted 10 October, 2023;
originally announced October 2023.
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Quasi-Stable Structures in Equilibrium Dense Bismuth Melt: Experimental and First Principles Theoretical Studies
Authors:
B. N. Galimzyanov,
A. A. Tsygankov,
A. V. Suslov,
V. I. Lad'yanov,
A. V. Mokshin
Abstract:
Near the melting temperature, equilibrium bismuth melt is characterized by structural features that are absent in equilibrium monatomic simple liquids. In the present work, the structure of bismuth melt is studied by X-ray diffraction experiments and quantum chemical calculations. The presence of quasi-stable structures in the melt has been found, the lifetime of which exceeds the structural relax…
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Near the melting temperature, equilibrium bismuth melt is characterized by structural features that are absent in equilibrium monatomic simple liquids. In the present work, the structure of bismuth melt is studied by X-ray diffraction experiments and quantum chemical calculations. The presence of quasi-stable structures in the melt has been found, the lifetime of which exceeds the structural relaxation time of this melt. It is shown that these structures are characterized by a low degree of ordering and spatial localisation. It was found that up to $50$\% of the atoms in the melt can be involved in the formation of these structures. The elementary structural units of these structures are triplets of regular geometry with the characteristic lengths $3.25$ Å~and $4.7$ Å~as well as with the characteristic angles $45^{\circ}$ and $90^{\circ}$. The characteristic lengths of these triplets are fully consistent with correlation lengths associated with the short-range order in bismuth melt.
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Submitted 14 June, 2023;
originally announced June 2023.
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Coexistence of two hole phases in high-quality $p$-GaAs/AlGaAs in the vicinity of Landau level filling factors $ν$=1 and $ν$=(1/3)
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West,
Y. M. Galperin
Abstract:
We focused on the transverse AC magneto-conductance of a high mobility $p$-GaAs/AlGaAs quantum well ($p=1.2\times 10^{11}$~cm$^{-2}$) in the vicinity of two values of the Landau level filling factor $ν$: $ν=1$ (integer quantum Hall effect) and $ν=1/3$ (fractional quantum Hall effect). The complex transverse AC conductance, $σ_{xx}^{AC} (ω)$, was found from simultaneous measurements of attenuation…
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We focused on the transverse AC magneto-conductance of a high mobility $p$-GaAs/AlGaAs quantum well ($p=1.2\times 10^{11}$~cm$^{-2}$) in the vicinity of two values of the Landau level filling factor $ν$: $ν=1$ (integer quantum Hall effect) and $ν=1/3$ (fractional quantum Hall effect). The complex transverse AC conductance, $σ_{xx}^{AC} (ω)$, was found from simultaneous measurements of attenuation and velocity of surface acoustic waves (SAWs) propagating along the interface between a piezoelectric crystal and the two-dimensional hole system under investigation. We analyzed both the real and imaginary parts of the hole conductance and compared the similarities and differences between the results for filling factor 1 and filling factor 1/3. Both to the left and to the right of these values maxima of a specific shape, "wings", arose in the $σ(ν)$ dependences at those two $ν$. Analysis of the results of our acoustic measurements at different temperatures and surface acoustic wave frequencies allowed us to attribute these wings to the formation of collective localized states, namely the domains of a pinned Wigner crystal, i.e., a Wigner solid. While the Wigner solid has been observed in 2D hole systems previously, we were able to detect 20 it at the highest hole density and, therefore, the lowest hole-hole interaction reported.
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Submitted 6 February, 2023;
originally announced February 2023.
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Dresselhaus spin-orbit interaction in the p-AlGaAs/GaAs/AlGaAs structure with a square quantum well: Surface Acoustic Waves Study
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West
Abstract:
The effect of spin-orbit interaction was studied in a high-quality $p$-AlGaAs/GaAs/AlGaAs structure with a square quantum well using acoustic methods. The structure grown on a GaAs (100) substrate was symmetrically doped with carbon on both sides of the quantum well. Shubnikov-de Haas-type oscillations of the ac conductance of two-dimensional holes were measured. At a low magnetic field $B <$2 T c…
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The effect of spin-orbit interaction was studied in a high-quality $p$-AlGaAs/GaAs/AlGaAs structure with a square quantum well using acoustic methods. The structure grown on a GaAs (100) substrate was symmetrically doped with carbon on both sides of the quantum well. Shubnikov-de Haas-type oscillations of the ac conductance of two-dimensional holes were measured. At a low magnetic field $B <$2 T conductance oscillations undergo beating induced by a spin-orbit interaction. Analysis of the beating character made it possible to separate the conductance contributions from the two heavy holes subbands split by the spin-orbit interaction. For each of the subbands the values of the effective masses and quantum relaxation times have been determined, and then the energy of the spin-orbit interaction was obtained. The quantum well profile, as well as the small magnitude of the spin-orbit interaction, allowed us to conclude that the spin-orbit splitting is governed by the Dresselhaus mechanism.
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Submitted 14 October, 2021;
originally announced October 2021.
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Enhanced spin correlations in the Bose-Einstein condensate compound Sr3Cr2O8
Authors:
T. Nomura,
Y. Skourski,
D. L. Quintero-Castro,
A. A. Zvyagin,
A. V. Suslov,
D. Gorbunov,
S. Yasin,
J. Wosnitza,
K. Kindo,
A. T. M. N. Islam,
B. Lake,
Y. Kohama,
S. Zherlitsyn,
M. Jaime
Abstract:
Combined experimental and modeling studies of the magnetocaloric effect, ultrasound, and magnetostriction were performed on single-crystal samples of the spin-dimer system Sr$_3$Cr$_2$O$_8$ in large magnetic fields, to probe the spin-correlated regime in the proximity of the field-induced XY-type antiferromagnetic order also referred to as a Bose-Einstein condensate of magnons. The magnetocaloric…
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Combined experimental and modeling studies of the magnetocaloric effect, ultrasound, and magnetostriction were performed on single-crystal samples of the spin-dimer system Sr$_3$Cr$_2$O$_8$ in large magnetic fields, to probe the spin-correlated regime in the proximity of the field-induced XY-type antiferromagnetic order also referred to as a Bose-Einstein condensate of magnons. The magnetocaloric effect, measured under adiabatic conditions, reveals details of the field-temperature ($H,T$) phase diagram, a dome characterized by critical magnetic fields $H_{c1}$ = 30.4 T, $H_{c2}$ = 62 T, and a single maximum ordering temperature $T_{\rm max}(45~$T$)\simeq$8 K. The sample temperature was observed to drop significantly as the magnetic field is increased, even for initial temperatures above $T_{\rm max}$, indicating a significant magnetic entropy associated to the field-induced closure of the spin gap. The ultrasound and magnetostriction experiments probe the coupling between the lattice degrees of freedom and the magnetism in Sr$_3$Cr$_2$O$_8$. Our experimental results are qualitatively reproduced by a minimalistic phenomenological model of the exchange-striction by which sound waves renormalize the effective exchange couplings.
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Submitted 11 August, 2020;
originally announced August 2020.
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Magnetostriction of AlFe2B2 in High Magnetic Fields
Authors:
S. Sharma,
A. E. Kovalev,
D. J. Rebar,
D. Mann,
V. Yannello,
M. Shatruk,
A. V. Suslov,
J. H. Smith,
T. Siegrist
Abstract:
Using the experimental capability of the novel X-ray diffraction instrument available at the 25 Tesla Florida Split Coil Magnet at the NHMFL, Tallahassee we present an extensive investigation on the magnetostriction of polycrystalline AlFe2B2. The magnetostriction was measured near the ferromagnetic transition temperature (Curie temperature TC = 280 K, determined via DC magnetization measurements)…
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Using the experimental capability of the novel X-ray diffraction instrument available at the 25 Tesla Florida Split Coil Magnet at the NHMFL, Tallahassee we present an extensive investigation on the magnetostriction of polycrystalline AlFe2B2. The magnetostriction was measured near the ferromagnetic transition temperature (Curie temperature TC = 280 K, determined via DC magnetization measurements), namely, at 250, 290, and 300 K. AlFe2B2 exhibits an anisotropic change in lattice parameters as a function of magnetic field near the Curie temperature, and a monotonic variation as a function of applied field has been observed, i.e., the c-axis increases significantly while the a- and b-axes decrease with the increasing field in the vicinity of TC, irrespective of the measurement temperature. The volume magnetostriction decreases with decreasing temperature and changes its sign across TC. Density functional theory calculations for the non-polarized and spin-polarized (ferromagnetic) models confirm that the observed changes in lattice parameters due to spin polarization are consistent with the experiment. The relationships for magnetostriction are estimated based on a simplified Landau model that agrees well with the experimental results.
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Submitted 16 August, 2020; v1 submitted 31 July, 2020;
originally announced August 2020.
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Composite fermions in a wide quantum well in the vicinity of the filling factor 1/2
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
D. Kamburov,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West,
Y. M. Galperin
Abstract:
Using acoustic method we study dependences of transverse AC conductance, $σ(ω)$, on magnetic field, temperature and the amplitude of AC electric field in a wide (75 nm) quantum well (QW) structure focusing on the vicinity of the filling factor $ν=1/2$. Measurements are performed in the frequency domain 30-307 MHz and in the temperature domain 20-500 mK. Usually, in wide QW structures closely to…
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Using acoustic method we study dependences of transverse AC conductance, $σ(ω)$, on magnetic field, temperature and the amplitude of AC electric field in a wide (75 nm) quantum well (QW) structure focusing on the vicinity of the filling factor $ν=1/2$. Measurements are performed in the frequency domain 30-307 MHz and in the temperature domain 20-500 mK. Usually, in wide QW structures closely to $ν=1/2$ the fractional quantum Hall effect (FQHE) regime is realized at some parameters of the sample. However, in our structure, at $ν=1/2$ it is a compressible state corresponding to gas of composite fermions which is observed. This is confirmed by apparent frequency independence and weakly decreasing temperature dependence of $\mathrm{Re}\, σ(ω)$. Comparing the dependences of this quantity on temperature and power of the acoustic wave we conclude that the observed nonlinear behavior of the conductance is compatible with heating of the composite fermions by the acoustic wave. For comparison, we also study the vicinity of $ν= 3/2$ where the FQHE regime is clearly observed.
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Submitted 5 December, 2019;
originally announced December 2019.
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Electronic band structure in $n$-type GaAs/AlGaAs wide quantum wells in tilted magnetic field
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
M. O. Nestoklon,
D. Kamburov,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West,
L. E. Golub
Abstract:
Oscillations of the real component of AC conductivity $σ_1$ in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at $T$=(20-500)~mK. In a wide quantum well, the electronic band structure is associated with the two-subband electron spectrum, namely the symmetric (S) and antisymmetric (AS) subbands formed due to electrostat…
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Oscillations of the real component of AC conductivity $σ_1$ in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at $T$=(20-500)~mK. In a wide quantum well, the electronic band structure is associated with the two-subband electron spectrum, namely the symmetric (S) and antisymmetric (AS) subbands formed due to electrostatic repulsion of electrons. A change of the oscillations amplitude in tilted magnetic field observed in the experiments occurs due to crossings of Landau levels of different subbands (S and AS) at the Fermi level. The theory developed in this work shows that these crossings are caused by the difference in the cyclotron energies in the S and AS subbands induced by the in-plane magnetic field.
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Submitted 2 September, 2019; v1 submitted 17 November, 2018;
originally announced November 2018.
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Observation of sub-kelvin superconductivity in Cd$_3$As$_2$ thin films
Authors:
A. V. Suslov,
A. B. Davydov,
L. N. Oveshnikov,
L. A. Morgun,
K. I. Kugel,
V. S. Zakhvalinskii,
E. A. Pilyuk,
A. V. Kochura,
A. P. Kuzmenko,
V. M. Pudalov,
B. A. Aronzon
Abstract:
We report the first experimental observation of superconductivity in Cd$_3$As$_2$ thin films without application of external pressure. Surface studies suggest that the observed transport characteristics are related to the polycrystalline continuous part of investigated films with homogeneous distribution of elements and the Cd-to-As ratio close to stoichiometric Cd$_3$As$_2$. The latter is also su…
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We report the first experimental observation of superconductivity in Cd$_3$As$_2$ thin films without application of external pressure. Surface studies suggest that the observed transport characteristics are related to the polycrystalline continuous part of investigated films with homogeneous distribution of elements and the Cd-to-As ratio close to stoichiometric Cd$_3$As$_2$. The latter is also supported by Raman spectra of the studied films, which are similar to those of Cd$_3$As$_2$ single crystals. The formation of superconducting phase in films under study is confirmed by the characteristic behavior of temperature and magnetic field dependence of samples resistances, as well as by the presence of pronounced zero-resistance plateaux in $dV/dI$ characteristics. The corresponding $H_c-T_c$ plots reveal a clearly pronounced linear behavior within the intermediate temperature range, similar to that observed for bulk Cd$_3$As$_2$ and Bi$_2$Se$_3$ films under pressure, suggesting the possibility of nontrivial pairing in the films under investigation. We discuss a possible role of sample inhomogeneities and crystal strains in the observed phenomena.
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Submitted 14 November, 2018;
originally announced November 2018.
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Linear magnetoresistance in the low-field limit in density-wave materials
Authors:
Yejun Feng,
Yishu Wang,
D. M. Silevitch,
J. -Q. Yan,
Riki Kobayashi,
Masato Hedo,
Takao Nakama,
Yoshichika Ōnuki,
A. V. Suslov,
B. Mihaila,
P. B. Littlewood,
T. F. Rosenbaum
Abstract:
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2], and inhomogeneities that lead to wandering current paths [3, 4] can induce a crossover from quadratic to linear magnetoresistance with increasing magnetic field.…
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The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2], and inhomogeneities that lead to wandering current paths [3, 4] can induce a crossover from quadratic to linear magnetoresistance with increasing magnetic field. Here we explore a series of metallic charge- and spin-density-wave systems that exhibit extremely large positive linear magnetoresistance. By contrast to other linear MR mechanisms, this effect remains robust down to miniscule magnetic fields of tens of Oersted at low temperature. We frame an explanation of this phenomenon in a semi-classical narrative for a broad category of materials with partially-gapped Fermi surfaces due to density waves.
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Submitted 6 November, 2018;
originally announced November 2018.
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Intersubband scattering in n-GaAs/AlGaAs wide quantum wells
Authors:
I. L. Drichko,
I. Yu. Smirnov,
M. O. Nestoklon,
A. V. Suslov,
D. Kamburov,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West,
L. E. Golub
Abstract:
Slow magnetooscilations of the conductivity are observed in a 75 nm wide quantum well at heating of the two-dimensional electrons by a high-intensity surface acoustic wave. These magnetooscillations are caused by intersubband elastic scattering between the symmetric and asymmetric subbands formed due to an electrostatic barrier in the center of the quantum well. The tunneling splitting between the…
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Slow magnetooscilations of the conductivity are observed in a 75 nm wide quantum well at heating of the two-dimensional electrons by a high-intensity surface acoustic wave. These magnetooscillations are caused by intersubband elastic scattering between the symmetric and asymmetric subbands formed due to an electrostatic barrier in the center of the quantum well. The tunneling splitting between these subbands as well as the intersubband scattering rate are determined.
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Submitted 11 January, 2018;
originally announced January 2018.
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Spatially inhomogeneous electron state deep in the extreme quantum limit of strontium titanate
Authors:
Anand Bhattacharya,
Brian Skinner,
Guru Khalsa,
Alexey V. Suslov
Abstract:
When an electronic system is subjected to a sufficiently strong magnetic field that the cyclotron energy is much larger than the Fermi energy, the system enters the "extreme quantum limit" (EQL) and becomes susceptible to a number of instabilities. Bringing a three-dimensional electronic system deeply into the EQL can be difficult, however, since it requires a small Fermi energy, large magnetic fi…
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When an electronic system is subjected to a sufficiently strong magnetic field that the cyclotron energy is much larger than the Fermi energy, the system enters the "extreme quantum limit" (EQL) and becomes susceptible to a number of instabilities. Bringing a three-dimensional electronic system deeply into the EQL can be difficult, however, since it requires a small Fermi energy, large magnetic field, and low disorder. Here we present an experimental study of the EQL in lightly-doped single crystals of strontium titanate, which remain good bulk conductors down to very low temperatures and high magnetic fields. Our experiments probe deeply into the regime where theory has long predicted electron-electron interactions to drive the system into a charge density wave or Wigner crystal state. A number of interesting features arise in the transport in this regime, including a striking re-entrant nonlinearity in the current-voltage characteristics and a saturation of the quantum-limiting field at low carrier density. We discuss these features in the context of possible correlated electron states, and present an alternative picture based on magnetic-field induced puddling of electrons.
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Submitted 20 July, 2016;
originally announced July 2016.
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Melting of Wigner crystal in high-mobility $n$-GaAs/AlGaAs heterostructures at filling factors $0.18 > ν> 0.125$: Acoustic studies
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
Y. M. Galperin,
L. N. Pfeiffer,
K. W. West
Abstract:
Using acoustic methods the complex high-frequency conductance of high-mobility $n$-GaAs/AlGaAs heterostructures was determined in magnetic fields 12$÷$18~T. Based on the observed frequency and temperature dependences we conclude that in the investigated magnetic field range and at sufficiently low temperatures, $T \lesssim 200$~mK, the electron system forms a Wigner crystal deformed due to pinning…
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Using acoustic methods the complex high-frequency conductance of high-mobility $n$-GaAs/AlGaAs heterostructures was determined in magnetic fields 12$÷$18~T. Based on the observed frequency and temperature dependences we conclude that in the investigated magnetic field range and at sufficiently low temperatures, $T \lesssim 200$~mK, the electron system forms a Wigner crystal deformed due to pinning by disorder. At some temperature, which depends on the electron filling factor, the temperature dependences of both components of the complex conductance get substantially changed. We have ascribed this rapid change of the conduction mechanism to melting of the Wigner crystal and study the dependence of the so-defined melting temperature on the electron filling factor.
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Submitted 7 July, 2016;
originally announced July 2016.
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Fractional Quantum Hall States in a Ge Quantum Well
Authors:
O. A. Mironov,
N. d'Ambrumenil,
A. Dobbie,
A. V. Suslov,
E. Green,
D. R. Leadley
Abstract:
Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ν=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across sad…
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Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ν=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarised Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.
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Submitted 20 May, 2016; v1 submitted 22 December, 2015;
originally announced December 2015.
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Crossover between localized states and pinned Wigner crystal in high-mobility n-GaAs/AlGaAs heterostructures near filling factor $ν=1$
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
L. N. Pfeiffer,
K. W. West,
Y. M. Galperin
Abstract:
We have measured magnetic field dependences of the attenuation and velocity of surface acoustic waves in a high-mobility $n$-GaAs/AlGaAs structure with a wide quantum well. The results allowed us to find the complex conductance, $σ(ω)$, of the heterostructure for different frequencies, temperatures and magnetic fields near filling factors $ν=1, 2$. Observed behavior of $σ(ω)$ versus magnetic field…
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We have measured magnetic field dependences of the attenuation and velocity of surface acoustic waves in a high-mobility $n$-GaAs/AlGaAs structure with a wide quantum well. The results allowed us to find the complex conductance, $σ(ω)$, of the heterostructure for different frequencies, temperatures and magnetic fields near filling factors $ν=1, 2$. Observed behavior of $σ(ω)$ versus magnetic field outside close vicinities of integer fillings reveals an oscillation pattern indicative of the rich fractional quantum Hall effect. Our result is that in very close vicinities of integer filling factors the AC response of a high-mobility two-dimensional structures behaves as that of a two-dimensional system of localized electrons. Namely, both real and imaginary parts of the complex AC conductance at low temperatures agree with the predictions for the two-site model for a two-dimensional hopping system. Another result is the specific temperature dependences of $σ(ω)$, which are extremely sensitive to the filling factor value. These dependences indicate a sharp crossover between the localized modes and a pinned Wigner crystal.
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Submitted 30 November, 2015;
originally announced November 2015.
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Surface Acoustic Waves Probe of the Spin Phase Transition at $ν$=2/3 in n-GaAs/AlGaAs structure
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
L. N. Pfeiffer,
K. W. West
Abstract:
High frequency (ac) conductivity in the single quantum well AlGaAs/GaAs/AlGaAs with high mobility was investigated by contactless acoustic methods in the fractional quantum Hall effect regime in perpendicular and tilted magnetic fields. We studied the dependence of ac conductivity $σ^{ac}=σ_1 - iσ_2$ on both the temperature and magnetic field tilt angle. Tilting the magnetic field relative to the…
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High frequency (ac) conductivity in the single quantum well AlGaAs/GaAs/AlGaAs with high mobility was investigated by contactless acoustic methods in the fractional quantum Hall effect regime in perpendicular and tilted magnetic fields. We studied the dependence of ac conductivity $σ^{ac}=σ_1 - iσ_2$ on both the temperature and magnetic field tilt angle. Tilting the magnetic field relative to the sample surface enabled us to change the position of the conductivity oscillation minimum at $ν$=2/3. We measured the temperature dependence of ac conductivity for each tilt angle and for the 2/3 state we calculated the activation energy $ΔE$ which was derived by constructing the Arrhenius plot ln $σ_1$ against 1/$T$. Analyzing behavior of the activation energy in total magnetic field for the filling factor 2/3 we observed a distinct minimum which can be interpreted as the spin unpolarized-polarized phase transition.
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Submitted 20 November, 2015;
originally announced November 2015.
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Wigner crystal in a two-dimensional electron system in the vicinity of filling factor 1/5: Acoustic studies
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
L. N. Pfeiffer,
K. W. West,
Y. M. Galperin
Abstract:
By simultaneous measurements of the attenuation and velocity of surface acoustic waves propagating in proximity to a high-quality GaAs quantum well we study the complex AC conductance of the two-dimensional electron system. Focusing on the vicinity of the filling factor $ν=1/5$ we confirm that the insulating states formed closely to this value of $ν$ are pinned Wigner crystals.
By simultaneous measurements of the attenuation and velocity of surface acoustic waves propagating in proximity to a high-quality GaAs quantum well we study the complex AC conductance of the two-dimensional electron system. Focusing on the vicinity of the filling factor $ν=1/5$ we confirm that the insulating states formed closely to this value of $ν$ are pinned Wigner crystals.
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Submitted 17 November, 2015;
originally announced November 2015.
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Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe
Authors:
M. V. Yakunin,
A. V. Suslov,
M. R. Popov,
E. G. Novik,
S. A. Dvoretsky,
N. N. Mikhailov
Abstract:
We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands than in known HgTe single quantum wells (QW), which may be regulated by an applied gate voltage $V_g$. This large overlap manifests itself in a much higher critic…
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We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands than in known HgTe single quantum wells (QW), which may be regulated by an applied gate voltage $V_g$. This large overlap manifests itself in a much higher critical field $B_c$ separating the range above it where the quantum peculiarities shift linearly with $V_g$ and the range below with a complicated behavior. In the latter case the $N$-shaped and double-$N$-shaped structures in the Hall magnetoresistance $ρ_{xy}(B)$ are observed with their scale in field pronouncedly enlarged as compared to the pictures observed in an analogous single QW. The coexisting electrons and holes were found in the whole investigated range of positive and negative $V_g$ as revealed from fits to the low-field $N$-shaped $ρ_{xy}(B)$ and from the Fourier analysis of oscillations in $ρ_{xx}(B)$. A peculiar feature here is that the found electron density $n$ remains almost constant in the whole range of investigated $V_g$ while the hole density $p$ drops down from the value a factor of 6 larger than $n$ at extreme negative $V_g$ to almost zero at extreme positive $V_g$ passing through the charge neutrality point. We show that this difference between $n$ and $p$ stems from an order of magnitude larger density of states for holes in the lateral valence band maxima than for electrons in the conduction band minimum. We interpret the observed reentrant sign-alternating $ρ_{xy}(B)$ between electronic and hole conductivities and its zero resistivity state in the quantum Hall range of fields on the basis of a calculated picture of magnetic levels in a DQW.
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Submitted 29 October, 2015;
originally announced October 2015.
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In-plane magnetic field effect on hole cyclotron mass and $g_z$ factor in high-mobility SiGe/Ge/SiGe structures
Authors:
I. L. Drichko,
V. A. Malysh,
I. Yu. Smirnov,
L. E. Golub,
S. A. Tarasenko,
A. V. Suslov,
O. A. Mironov,
M. Kummer,
H. von Känel
Abstract:
The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt…
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The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt angle of the magnetic field with respect to the normal of the two-dimensional channel at $T$=0.3 K. It is shown, that at the minima of the conductivity oscillations, holes are localized on the Fermi level, and that there is a temperature domain in which the high-frequency conductivity in the bulk of the quantum well is of the activation nature. The analysis of the temperature dependence of the conductivity at odd filling factors enables us to determine the effective $g_z$ factor. It is shown that the in-plane component of the magnetic field leads to an increase of the cyclotron mass and to a reduction of the $g_z$ factor. We developed a microscopic theory of these effects for the heavy-hole states of the complex valence band in quantum wells which describes well the experimental findings.
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Submitted 13 November, 2014;
originally announced November 2014.
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Unusual Shubnikov-de Haas oscillations in BiTeCl
Authors:
C. Martin,
A. V. Suslov,
S. Buvaev,
A. F. Hebard,
P. Bugnon,
H. Berger,
A. Magrez,
D. B. Tanner
Abstract:
We report measurements of Shubnikov-de Haas (SdH) oscillations in single crystals of BiTeCl at magnetic fields up to 31 T and at temperatures as low as 0.4 K. Two oscillation frequencies were resolved at the lowest temperatures, $F_{1}=65 \pm 4$ Tesla and $F_{2}=156 \pm 5$ Tesla. We also measured the infrared optical reflectance $\left(\cal R(ω)\right)$ and Hall effect; we propose that the two fre…
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We report measurements of Shubnikov-de Haas (SdH) oscillations in single crystals of BiTeCl at magnetic fields up to 31 T and at temperatures as low as 0.4 K. Two oscillation frequencies were resolved at the lowest temperatures, $F_{1}=65 \pm 4$ Tesla and $F_{2}=156 \pm 5$ Tesla. We also measured the infrared optical reflectance $\left(\cal R(ω)\right)$ and Hall effect; we propose that the two frequencies correspond respectively to the inner and outer Fermi sheets of the Rashba spin-split bulk conduction band. The bulk carrier concentration was $n_{e}\approx1\times10^{19}$ cm$^{-3}$ and the effective masses $m_{1}^{*}=0.20 m_{0}$ for the inner and $m_{2}^{*}=0.27 m_{0}$ for the outer sheet. Surprisingly, despite its low effective mass, we found that the amplitude of $F_{2}$ is very rapidly suppressed with increasing temperature, being almost undetectable above $T\approx4$ K.
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Submitted 24 July, 2014;
originally announced July 2014.
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Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields
Authors:
I. L. Drichko,
V. A. Malysh,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
M. Kummer,
H. von Känel
Abstract:
The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility $p$-SiGe/Ge/SiGe structure in the integer quantum Hall (IQHE) regime. The structure was grown by low-energy plasma-enhanced chemical vapor deposition and comprised a two-dimensional channel formed in a compressively strained Ge layer. It was investigated at tempera…
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The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility $p$-SiGe/Ge/SiGe structure in the integer quantum Hall (IQHE) regime. The structure was grown by low-energy plasma-enhanced chemical vapor deposition and comprised a two-dimensional channel formed in a compressively strained Ge layer. It was investigated at temperatures of 0.3 - 5.8 K and magnetic fields up to 18 T at various SAW intensities. In the IQHE regime, in minima of the conductivity oscillations with small filling factors, holes are localized. The ac conductivity is of the hopping nature and can be described within the "two-site" model. Furthermore, the dependence of the ac conductivity on the electric field of the SAW was determined. The manifestation of non-linear effects is interpreted in terms of nonlinear percolation-based conductivity.
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Submitted 11 December, 2013;
originally announced December 2013.
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Effects of Spin Polarization in the HgTe Quantum Well
Authors:
M. V. Yakunin,
A. V. Suslov,
S. M. Podgornykh,
S. A. Dvoretsky,
N. N. Mikhailov
Abstract:
Magnetoresistivity features connected with the spin level coincidences under tilted fields in a $Γ_8$ conduction band of the HgTe quantum well were found to align along straight trajectories in a $(B_\bot,B_{||})$ plane between the field components perpendicular and parallel to the layer meaning a linear spin polarization dependence on magnetic field. Among the trajectories is a noticeable set of…
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Magnetoresistivity features connected with the spin level coincidences under tilted fields in a $Γ_8$ conduction band of the HgTe quantum well were found to align along straight trajectories in a $(B_\bot,B_{||})$ plane between the field components perpendicular and parallel to the layer meaning a linear spin polarization dependence on magnetic field. Among the trajectories is a noticeable set of lines descending from a single point on the $B_{||}$ axis, which is shown to yield a field of the full spin polarization of the electronic system, in agreement with the data on the electron redistribution between spin subbands obtained from Fourier transforms of oscillations along circle trajectories in the $(B_\bot,B_{||})$ plane and with the point on the magnetoresistivity under pure $B_{||}$ separating a complicated weak field dependence from the monotonous one. The whole picture of coincidences is well described by the isotropic $g$-factor although its value is twice as small as that obtained from oscillations under pure perpendicular fields. The discrepancy is attributed to different manifestations of spin polarization phenomena in the coincidences and within the exchange enhanced spin gaps. In the quantum Hall range of $B_\bot$, the spin polarization manifests in anticrossings of magnetic levels, which were found to depend dramatically nonmonotonously on $B_\bot$.
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Submitted 21 November, 2012;
originally announced November 2012.
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Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
The magnetoresistance components $ρ_{xx}$ and $ρ_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\times10^{11}$\,cm$^{-2}$. This tran…
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The magnetoresistance components $ρ_{xx}$ and $ρ_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\times10^{11}$\,cm$^{-2}$. This transition is due to crossing of the 0$\uparrow$ and 1$\downarrow$ Landau levels. However, in another sample, with $p$=7.2$\times10^{10}$\,cm$^{-2}$, the 0$\uparrow$ and 1$\downarrow$ Landau levels coincide for angles $Θ$=0-70$^{\text{o}}$. Only for $Θ$ > 70$^{\text{o}}$ do the levels start to diverge which, in turn, results in the energy gap opening.
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Submitted 5 April, 2012;
originally announced April 2012.
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Acoustic Studies of AC Conductivity Mechanisms in $n$-GaAs/AlGaAs in the Integer and Fractional Quantum Hall Effect Regime
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
D. R. Leadley
Abstract:
In case of a of the heterostructure n-GaAs/AlGaAs with sheet density $n=2 \times 10^{11}$cm$^{-2}$ and mobility $μ\approx 2 \times 10^6$ cm$^2$/V$\cdot$s with integer and fractional quantum Hall effect (IQHE and FQHE, respectively) we demonstrate the wide applicability of acoustic methods for determining the general conduction parameters of a two dimensional electron gas. We also examine the mecha…
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In case of a of the heterostructure n-GaAs/AlGaAs with sheet density $n=2 \times 10^{11}$cm$^{-2}$ and mobility $μ\approx 2 \times 10^6$ cm$^2$/V$\cdot$s with integer and fractional quantum Hall effect (IQHE and FQHE, respectively) we demonstrate the wide applicability of acoustic methods for determining the general conduction parameters of a two dimensional electron gas. We also examine the mechanisms of low-temperature conductivity in the minima of oscillations of high frequency conductivity in the IQHE and FQHE regimes. In the magnetic field region where electrons are delocalized, the parameters determined by the acoustic technique do not differ from those determined by a direct current. However, the acoustic measurements do not require Hall bars and electrical contacts to be fabricated. In the minima of IQHE and FQHE oscillations electrons are localized, and ac conductivity turns to be via hopping. An analysis of the high frequency conductivity in the QHE regime has been carried out within a "two site" model. Furthermore, measurements of acoustoelectric effects in a tilted magnetic field provided the dependence of the activation energy on magnetic field in the fractional quantum Hall effect regime at $ν$=2/3.
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Submitted 7 December, 2011; v1 submitted 4 December, 2011;
originally announced December 2011.
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Spin Polarization Phenomena and Pseudospin Quantum Hall Ferromagnetism in the HgTe Quantum Well
Authors:
M. V. Yakunin,
A. V. Suslov,
S. M. Podgornykh,
S. A. Dvoretsky,
N. N. Mikhailov
Abstract:
The parallel field of a full spin polarization of the electron gas in a \Gamma8 conduction band of the HgTe quantum well was obtained from the magnetoresistance by three different ways in a zero and quasi-classical range of perpendicular field component Bper. In the quantum Hall range of Bper the spin polarization manifests in anticrossings of magnetic levels, which were found to strongly nonmonot…
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The parallel field of a full spin polarization of the electron gas in a \Gamma8 conduction band of the HgTe quantum well was obtained from the magnetoresistance by three different ways in a zero and quasi-classical range of perpendicular field component Bper. In the quantum Hall range of Bper the spin polarization manifests in anticrossings of magnetic levels, which were found to strongly nonmonotonously depend on Bper.
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Submitted 27 July, 2011; v1 submitted 26 July, 2011;
originally announced July 2011.
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Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in $p$-Si/SiGe/Si Structures with an Anisotropic $g$ Factor
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
Magnetoresistivity $ρ_{xx}$ and $ρ_{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective $g$-factor on the angle of magnetic field tilt $θ$ to the normal to the plane of a two dimensional $p$-Si/SiGe/Si cha…
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Magnetoresistivity $ρ_{xx}$ and $ρ_{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective $g$-factor on the angle of magnetic field tilt $θ$ to the normal to the plane of a two dimensional $p$-Si/SiGe/Si channel is determined. A first order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor $ν$ = 2 at $θ\approx $ 59$^\textrm{o}$-60$^\textrm{o}$.
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Submitted 24 November, 2010;
originally announced November 2010.
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Magnetoresistance in Dilute $p$-Si/SiGe in Parallel and Tilted Magnetic Fields
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ and $ρ_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel…
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We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ and $ρ_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel plane. The large in-plane magnetoresistance can be explained by the influence of the \textit{in-plane} magnetic field on the orbital motion of the charge carriers in the quasi-2D system. The measurements of $ρ_{xx}$ and $ρ_{xy}$ in the tilted magnetic field showed that the anomaly in $ρ_{xx}$, observed at filling factor $ν$=3/2 is practically nonexistent in the conductivity $σ_{xx}$. The anomaly in $σ_{xx}$ at $ν$=2 might be explained by overlapping of the levels with different spins 0$\uparrow$ and 1$\downarrow$ when the tilt angle of the applied magnetic field is changed. The dependence of g-factor $g^*(Θ)/g^*(0^0)$ on the tilt angle $Θ$ was determined.
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Submitted 15 October, 2009;
originally announced October 2009.
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Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-p…
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We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-plane magnetic field $B_{\parallel}$ against the current $I$: $B_{\parallel} \perp I$ and $B_{\parallel} \parallel I$. In the sample with the lowest density in the magnetic field range of 0-7.2 T the temperature dependence of $ρ_{xx}$ demonstrates the metallic characteristics ($d ρ_{xx}/dT>$0). However, at $B_{\parallel}$ =7.2 T the derivative $d ρ_{xx}/dT$ reverses the sign. Moreover, the resistance depends on the current orientation with respect to the in-plane magnetic field. At $B_{\parallel} \cong$ 13 T there is a transition from the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}^2$ to the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}$. The observed effects can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system.
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Submitted 27 April, 2009; v1 submitted 17 July, 2008;
originally announced July 2008.
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Magnetotransport in low-density $p$-Si/SiGe heterostructures: From metal through hopping insulator to Wigner glass
Authors:
I. L. Drichko,
A. M. Dyakonov,
I. Yu. Smirnov,
A. V. Suslov,
Y. M. Galperin,
V. Vinokur,
M. Myronov,
O. A. Mironov,
D. R. Leadley
Abstract:
We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolutio…
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We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolution from metallic conductance at B=0 through hopping between localized states in intermediate magnetic fields (close to the plateau of the integer quantum Hall effect corresponding to the Landau-level filling factor $ν$=1) to formation of the Wigner glass in the extreme quantum limit ($B\gtrsim 14$, $T \lesssim 0.8$ K).
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Submitted 5 December, 2007;
originally announced December 2007.
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AC Conductance in Dense Array of the Ge$_{0.7}$Si$_{0.3}$ Quantum Dots in Si
Authors:
I. L. Drichko,
A. M. Diakonov,
I. Yu. Smirnov,
A. V. Suslov,
Y. M. Galperin,
A. I. Yakimov,
A. I. Nikiforov
Abstract:
Complex AC-conductance, $σ^{AC}$, in the systems with dense Ge$_{0.7}$Si$_{0.3}$ quantum dot (QD) arrays in Si has been determined from simultaneous measurements of attenuation, $ΔΓ=Γ(H)-Γ(0)$, and velocity, $ΔV /V=(V(H)-V(0)) / V(0)$, of surface acoustic waves (SAW) with frequencies $f$ = 30-300 MHz as functions of transverse magnetic field $H \leq$ 18 T in the temperature range $T$ = 1-20 K. I…
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Complex AC-conductance, $σ^{AC}$, in the systems with dense Ge$_{0.7}$Si$_{0.3}$ quantum dot (QD) arrays in Si has been determined from simultaneous measurements of attenuation, $ΔΓ=Γ(H)-Γ(0)$, and velocity, $ΔV /V=(V(H)-V(0)) / V(0)$, of surface acoustic waves (SAW) with frequencies $f$ = 30-300 MHz as functions of transverse magnetic field $H \leq$ 18 T in the temperature range $T$ = 1-20 K. It has been shown that in the sample with dopant (B) concentration 8.2$ \times 10^{11}$ cm$^{-2}$ at temperatures $T \leq$4 K the AC conductivity is dominated by hopping between states localized in different QDs. The observed power-law temperature dependence, $σ_1(H=0)\propto T^{2.4}$, and weak frequency dependence, $σ_1(H=0)\propto ω^0$, of the AC conductivity are consistent with predictions of the two-site model for AC hopping conductivity for the case of $ωτ_0 \gg $1, where $ω=2πf$ is the SAW angular frequency and $τ_0$ is the typical population relaxation time. At $T >$ 7 K the AC conductivity is due to thermal activation of the carriers (holes) to the mobility edge. In intermediate temperature region 4$ < T<$ 7 K, where AC conductivity is due to a combination of hops between QDs and diffusion on the mobility edge, one succeeded to separate both contributions. Temperature dependence of hopping contribution to the conductivity above $T^*\sim$ 4.5 K saturates, evidencing crossover to the regime where $ωτ_0 < $1. From crossover condition, $ωτ_0(T^*)$ = 1, the typical value, $τ_0$, of the relaxation time has been determined.
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Submitted 30 June, 2005;
originally announced June 2005.
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Electron localization in sound absorption oscillations in the quantum Hall effect regime
Authors:
I. L. Drichko,
A. M. Diakonov,
A. M. Kreshchuk,
T. A. Polyanskaya,
I. G. Savel'ev,
I. Yu. Smirnov,
A. V. Suslov
Abstract:
The absorption coefficient for surface acoustic waves in a piezoelectric insulator in contact with a GaAs/AlGaAs heterostructure (with two-dimensional electron mobility $μ= 1.3\times 10^5 cm^2/V\cdot s)$ at T=4.2K) via a small gap has been investigated experimentally as a function of the frequency of the wave, the width of the vacuum gap, the magnetic field, and the temperature. The magnetic fie…
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The absorption coefficient for surface acoustic waves in a piezoelectric insulator in contact with a GaAs/AlGaAs heterostructure (with two-dimensional electron mobility $μ= 1.3\times 10^5 cm^2/V\cdot s)$ at T=4.2K) via a small gap has been investigated experimentally as a function of the frequency of the wave, the width of the vacuum gap, the magnetic field, and the temperature. The magnetic field and frequency dependencies of the high-frequency conductivity (in the region 30-210 MHz) are calculated and analyzed. The experimental results can be explained if it assumed that there exists a fluctuation potential in which current carrier localization occurs. The absorption of the surface acoustic waves in an interaction with two-dimensional electrons localized in the energy "tails" of Landau levels is discussed.
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Submitted 27 October, 1999;
originally announced October 1999.
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Heating of a two-dimensional electron gas by the electric field of a surface acoustic wave
Authors:
I. L. Drichko,
A. M. D'yakonov,
V. D. Kagan,
A. M. Kreshchuk,
T. A. Polyanskaya,
I. G. Savel'ev,
I. Yu. Smirnov,
A. V. Suslov
Abstract:
The heating of a two-dimensional electron gas by an rf electric field generated by a surface acoustic wave, which can be described by an electron temperature $T_e$, has been investigated. It is shown that the energy balance of the electron gas is determined by electron scattering by the piezoelectric potential of the acoustic phonons with $T_e$ determined from measurements at frequencies $f$= 30…
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The heating of a two-dimensional electron gas by an rf electric field generated by a surface acoustic wave, which can be described by an electron temperature $T_e$, has been investigated. It is shown that the energy balance of the electron gas is determined by electron scattering by the piezoelectric potential of the acoustic phonons with $T_e$ determined from measurements at frequencies $f$= 30 and 150 MHz. The experimental curves of the energy loss $Q$ versus $T_e$ at different SAW frequencies depend on the value of $ω\barτ_ε$, compared to 1, where $ \bar τ_ε$ is the relaxation time of the average electron energy. Theoretical calculations of the heating of a two-dimensional electron gas by the electric field of the surface acoustic wave are presented for the case of thermal electrons ($ΔT \ll T$). The calculations show that for the same energy losses $Q$ the degree of heating of the two-dimensional electrons (i.e., the ratio $T_e/T$) for $ω\barτ_ε>1$ ($f$= 150 MHz) is less than for $ω\barτ_ε<1$ ($f$=30 MHz). Experimental results confirming this calculation are presented.
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Submitted 4 March, 1998; v1 submitted 21 February, 1998;
originally announced February 1998.
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The investigation of the high frequency hopping conductivity in two- and three-dimensional electron gas by an acoustic method
Authors:
I. L. Drichko,
A. M. Diakonov,
I. Yu. Smirnov,
A. V. Suslov
Abstract:
High-frequency (HF) conductivity ($σ_{hf}$) measured by an acoustical method has been studied in GaAs/AlGaAs heterostructures in a linear and nonlinear regime on acoustic power. It has been shown that in the quantum Hall regime at magnetic fields corresponding to the middle of the Hall plateaus the HF conductivity is determined by the sum of the conductivity of 2-dimensional electrons in the hig…
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High-frequency (HF) conductivity ($σ_{hf}$) measured by an acoustical method has been studied in GaAs/AlGaAs heterostructures in a linear and nonlinear regime on acoustic power. It has been shown that in the quantum Hall regime at magnetic fields corresponding to the middle of the Hall plateaus the HF conductivity is determined by the sum of the conductivity of 2-dimensional electrons in the high-mobility channel and the hopping conductivity of the electrons in the doped thick AlGaAs layer. The dependence of these conductivities on a temperature is analyzed. The width of the Landau level broadened by the impurity random potential is determined.
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Submitted 22 October, 1997; v1 submitted 10 October, 1997;
originally announced October 1997.
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The nonlinear effects in 2DEG conductivity investigation by an acoustic method
Authors:
I. L. Drichko,
A. M. Diakonov,
V. D. Kagan,
A. M. Kreshchuk,
T. A. Polyanskaya,
I. G. Savel'ev,
I. Yu. Smirnov,
A. V. Suslov
Abstract:
The parameters of two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure were determined by an acoustical (contactless) method in the delocalized electrons region ($B\le$2.5T). Nonlinear effects in Surface Acoustic Wave (SAW) absorption by 2DEG are determined by the electron heating in the electric field of SAW, which may be described in terms of electron temperature $T_e$. The ene…
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The parameters of two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure were determined by an acoustical (contactless) method in the delocalized electrons region ($B\le$2.5T). Nonlinear effects in Surface Acoustic Wave (SAW) absorption by 2DEG are determined by the electron heating in the electric field of SAW, which may be described in terms of electron temperature $T_e$. The energy relaxation time $τ_ε$ is determined by the scattering at piezoelectric potential of acoustic phonons with strong screening. At different SAW frequencies the heating depends on the relationship between $ωτ_ε$ and 1 and is determined either by the instantaneously changing wave field ($ωτ_ε$$<1$), or by the average wave power ($ωτ_ε$$>1$).
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Submitted 21 October, 1997; v1 submitted 6 October, 1997;
originally announced October 1997.
