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Theoretical investigations of electronic and optical properties of double perovskite Cs$_2$Tl$BX_6$ ($B=$ Bi, In; $X=$ Cl, Br, I) for photovoltaic application
Authors:
Ardimas,
Edi Suprayoga
Abstract:
Lead-free double perovskites are gaining attention for photovoltaic (PV) applications due to their long carrier lifetimes, tunable bandgaps, and low toxicity. Using first-principles calculations, we studied the structural, electronic and optical properties of Cs$_2$Tl$BX_6$ ($B=$ Bi, In; $X=$ Cl, Br, I). The cubic phase (space group Fm3m) was analyzed within the projector-augmented wave (PAW) meth…
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Lead-free double perovskites are gaining attention for photovoltaic (PV) applications due to their long carrier lifetimes, tunable bandgaps, and low toxicity. Using first-principles calculations, we studied the structural, electronic and optical properties of Cs$_2$Tl$BX_6$ ($B=$ Bi, In; $X=$ Cl, Br, I). The cubic phase (space group Fm3m) was analyzed within the projector-augmented wave (PAW) method. Our calculations predict direct bandgaps of 1.9-1.2 eV for Cs$_2$TlBi$X_6$ and indirect bandgaps of 2.4--0.8 eV for Cs$_2$TlIn$X_6$. Notably, the bandgap energy decreases with anion substitution from Cl to I, making these materials highly active in the near-infrared to visible light range. We reveal that Cs$_2$TlBi$X_6$ exhibits the highest optical absorption, with a peak value of $5\times10^5$ cm$^{-1}$ at an incident photon energy of 3 eV. Additionally, we evaluated the transport properties using the Boltzmann transport equations. The results indicate that Cs$_2$TlBi$X_6$ exhibit high electrical conductivity, reaching $8\times10^6$ S/m, and high electron mobility of 120 cm$^2/$V.s. PV performance analysis further reveals promising power conversion efficiencies (PCE) of up to 42\%, with Cs$_2$TlBi$X_6$ showing significantly higher PCE than Cs$_2$TlIn$X_6$. These reports highlight the potential of Cs$_2$TlBi$X_6$ for advanced photovoltaic devices.
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Submitted 15 May, 2025;
originally announced May 2025.
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One-dimensional confined Rashba states in a two-dimensional Si$_{2}$Bi$_{2}$ induced by vacancy line defects
Authors:
Arif Lukmantoro,
Edi Suprayoga,
Moh. Adhib Ulil Absor
Abstract:
Advanced defect engineering techniques have enabled the creation of unique quantum phases from pristine materials. One-dimensional (1D) atomic defects in low-dimensional systems are particularly intriguing due to their distinct quantum properties, such as 1D Rashba states that allow for the generation of nondissipative spin currents, making them ideal for spintronic devices. Using density-function…
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Advanced defect engineering techniques have enabled the creation of unique quantum phases from pristine materials. One-dimensional (1D) atomic defects in low-dimensional systems are particularly intriguing due to their distinct quantum properties, such as 1D Rashba states that allow for the generation of nondissipative spin currents, making them ideal for spintronic devices. Using density-functional calculations and model-based symmetry analysis, we report the emergence of 1D Rashba states in a two-dimensional Si$_{2}$Bi$_{2}$ monolayer (ML) with vacancy line defects (VLDs). We show that introducing VLDs in the Si$_{2}$Bi$_{2}$ ML induces 1D confined defect states near the Fermi level, which are strongly localized along the extended defect line. Notably, we observed 1D Rashba spin-split bands in these defect states with significant spin splitting originating mainly from the strong $p-p$ coupling orbitals between Si and Bi atoms near the defect sites. These spin-split defect states exhibit perfectly collinear spin polarization in momentum $\vec{k}$-space, which is oriented perpendicularly to the VLD orientation. Moreover, using $\vec{k}\cdot\vec{p}$ perturbation theory supplemented with symmetry analysis, we show that the 1D Rashba states with collinear spin polarization are enforced by the lowering of symmetry of the VLDs into the $C_{s}$ point group, which retains the $M_{xz}$ mirror symmetry along with the 1D nature of the VLDs. The observed 1D Rashba states in this system protect carriers against spin decoherence and support an exceptionally long spin lifetime, which could be promising for developing highly efficient spintronic devices.
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Submitted 19 January, 2025;
originally announced January 2025.
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Thermal transport and thermoelectric properties of transition metal dichalcogenides Mo$X_2$ from first-principles calculation
Authors:
Radityo Wisesa,
Anugrah Azhar,
Edi Suprayoga
Abstract:
The properties of two-dimensional (2D) materials have been extensively studied and applied in various applications. Our interest is to theoretically investigate the thermal transport and thermoelectric properties of the 2D transition metal dichalcogenides Mo$X_2$ ($X$ = S, Se, Te). We employ density functional theory and Boltzmann transport theory with relaxation-time approximation to calculate th…
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The properties of two-dimensional (2D) materials have been extensively studied and applied in various applications. Our interest is to theoretically investigate the thermal transport and thermoelectric properties of the 2D transition metal dichalcogenides Mo$X_2$ ($X$ = S, Se, Te). We employ density functional theory and Boltzmann transport theory with relaxation-time approximation to calculate the electronic and transport properties. We also implemented the kinetic-collective model to improve the calculation of lattice thermal conductivity. Our calculations indicate that MoTe$_2$ has the highest ZT of 2.77 among the other Mo$X_2$ at 550 K due to its low thermal conductivity and high electrical conductivity. Consequently, we suggest that Mo$X_2$ monolayers hold promise as materials for energy conversion devices due to their relatively high ZT. Moreover, these results could be beneficial to design 2D material based high performance thermoelectric devices.
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Submitted 30 January, 2024; v1 submitted 24 January, 2024;
originally announced January 2024.
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Stabilization and helicity control of hybrid magnetic skyrmion
Authors:
Muzakkiy P. M. Akhir,
Edi Suprayoga,
Adam B. Cahaya
Abstract:
The hybrid skyrmion, a type of magnetic skyrmion with intermediate helicity between Bloch and Néel skyrmion, has gained more attraction. It is tolerant toward the skyrmion Hall effect and a potential candidate for quantum bits. We investigated the stabilization and helicity control of the hybrid skyrmion in a two-dimensional magnetic system using an analytical model and micromagnetic simulation. W…
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The hybrid skyrmion, a type of magnetic skyrmion with intermediate helicity between Bloch and Néel skyrmion, has gained more attraction. It is tolerant toward the skyrmion Hall effect and a potential candidate for quantum bits. We investigated the stabilization and helicity control of the hybrid skyrmion in a two-dimensional magnetic system using an analytical model and micromagnetic simulation. We look at the interplaying factors of the bulk ($D_b$) and interfacial ($D_i$) Dzyaloshinskii-Moriya (DM) interactions along with the dipolar interaction. We show that the hybrid skyrmion can stabilize through the interplay between interfacial DM and either bulk DM or dipolar interaction. We can also control the helicity of the hybrid skyrmion by tuning the ratio of $D_i/D_b$ when there is no dipolar interaction, or simply by adjusting the $D_i$ when the $D_b$ is absent. Our results suggest that hybrid skyrmions can exist within $0 < |D_i| < 0.4$ mJ/m$^2$ for Co-based magnetic systems.
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Submitted 21 January, 2024; v1 submitted 16 August, 2023;
originally announced August 2023.
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Thermoelectrics properties of two-dimensional materials with combination of linear and nonlinear band structures
Authors:
Andri Darmawan,
Edi Suprayoga,
Ahmad R. T. Nugraha,
Abdullah A. AlShaikhi
Abstract:
We investigate thermoelectric (TE) properties of two-dimensional materials possessing two Dirac bands (a Dirac band) and a nonlinear band within the three-(two-)band model using linearized Boltzmann transport theory and relaxation time approximation. In the three-band model, we find that combinations of Dirac bands with a heavy nonlinear band, either a parabolic or a pudding-mold band, does not gi…
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We investigate thermoelectric (TE) properties of two-dimensional materials possessing two Dirac bands (a Dirac band) and a nonlinear band within the three-(two-)band model using linearized Boltzmann transport theory and relaxation time approximation. In the three-band model, we find that combinations of Dirac bands with a heavy nonlinear band, either a parabolic or a pudding-mold band, does not give much difference in their TE performance. The apparent difference only occurs in the position of the nonlinear band that leads to the maximum figure of merit ($ZT$). The optimum $ZT$ of the three-band model consisting of a nonlinear band is found when the nonlinear band intersects the Dirac bands near the Fermi level. By removing the linear conduction band, or, in other words, transforming the three-band model to the two-band model, we find better TE performance in the two-band model than in the three-band model, i.e., in terms of higher $ZT$ values
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Submitted 21 May, 2022;
originally announced May 2022.
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Uniaxial Strain-Induced Electronic Properties Alteration of MoS$_2$ Monolayer
Authors:
A. Setiawan,
I. P. Handayani,
E. Suprayoga
Abstract:
Molybdenum disulfide (MoS$_2$) has attracted interest owing to its strain-tuned electronic and optical properties, making it a promising candidate for applications in strain engineering devices. In this study, we investigate the effect of uniaxial strain on the electronic properties of MoS$_2$ monolayer using first-principles calculations. Results show that a crossover of the K-K direct to -K indi…
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Molybdenum disulfide (MoS$_2$) has attracted interest owing to its strain-tuned electronic and optical properties, making it a promising candidate for applications in strain engineering devices. In this study, we investigate the effect of uniaxial strain on the electronic properties of MoS$_2$ monolayer using first-principles calculations. Results show that a crossover of the K-K direct to -K indirect bandgap transitions occur at a strain of 1.743%. Moreover, a strong correlation is observed between the modified bandgap and the density of states (DOS) of the Mo-4d and S-3p orbitals at the valence band maximum and conduction band minimum. The uniaxial strain-tuned interatomic distance along the a-crystallographic axis does not only alter the bandgap at different rates but also affects the DOS of the Mo-4d orbital and possible electronic transitions. This study clarifies the mechanism of the electronic structural modification of two-dimensional MoS2 monolayer, which may affect intervalley transitions.
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Submitted 3 January, 2022;
originally announced January 2022.
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Spin-tunable thermoelectric performance in monolayer chromium pnictides
Authors:
Melania S. Muntini,
Edi Suprayoga,
Sasfan A. Wella,
Iim Fatimah,
Lila Yuwana,
Tosawat Seetawan,
Adam B. Cahaya,
Ahmad R. T. Nugraha,
Eddwi H. Hasdeo
Abstract:
Historically, finding two-dimensional (2D) magnets is well known to be a difficult task due to instability against thermal spin fluctuations. Metals are also normally considered poor thermoelectric (TE) materials. Combining intrinsic magnetism in two dimensions with conducting properties, one may expect to get the worst for thermoelectrics. However, we will show this is not always the case. Here,…
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Historically, finding two-dimensional (2D) magnets is well known to be a difficult task due to instability against thermal spin fluctuations. Metals are also normally considered poor thermoelectric (TE) materials. Combining intrinsic magnetism in two dimensions with conducting properties, one may expect to get the worst for thermoelectrics. However, we will show this is not always the case. Here, we investigate spin-dependent TE properties of monolayer chromium pnictides (CrX, where X = P, As, Sb, and Bi) using first-principles calculations of electrons and phonons, along with Boltzmann transport formalism under energy-dependent relaxation time approximation. All the CrX monolayers are dynamically stable and they also exhibit half metallicity with ferromagnetic ordering. Using the spin-valve setup with antiparallel spin configuration, the half metallicity and ferromagnetism in monolayer CrX enable manipulation of spin degrees of freedom to tune the TE figure of merit (ZT). At optimized chemical potential and operating temperature of 500 K, the maximum ZT values (= 0.22, 0.12, and 0.09) with the antiparallel spin-valve setup in CrAs, CrSb, and CrBi improve up to almost twice the original values (ZT = 0.12, 0.08, and 0.05) without the spin-valve configuration. Only in CrP, which is the lightest species and less spin-polarized among CrX, the maximum ZT (= 0.34) without the spin-valve configuration is larger than that (= 0.19) with the spin-valve one. We also find that, at 500 K, all the CrX monolayers possess exceptional TE power factors of about 0.02-0.08 W/m.K2, which could be one of the best values among 2D conductors.
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Submitted 17 June, 2022; v1 submitted 25 December, 2021;
originally announced December 2021.
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Investigation of electron and phonon transport in Bi-doped CaMnO$_3$ for thermoelectric applications
Authors:
E. Suprayoga,
W. B. K. Putri,
K. Singsoog,
S. Paengson,
M. Y. Hanna,
A. R. T. Nugraha,
D. R. Munazat,
B. Kurniawan,
M. Nurhuda,
T. Seetawan,
E. H. Hasdeo
Abstract:
Electron and phonon transports in CaMnO3 and its Bi-doped counterpart, Bi0.03Ca0.97MnO3, are investigated by thermoelectric transport measurements, Raman spectroscopy, and first-principles calculations. In particular, we focus on CaMnO3 and Bi0.03Ca0.97MnO3's electronic structures, temperature-dependent electron and phonon lifetimes, and their sound velocities. We find that the anti-ferromagnetic…
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Electron and phonon transports in CaMnO3 and its Bi-doped counterpart, Bi0.03Ca0.97MnO3, are investigated by thermoelectric transport measurements, Raman spectroscopy, and first-principles calculations. In particular, we focus on CaMnO3 and Bi0.03Ca0.97MnO3's electronic structures, temperature-dependent electron and phonon lifetimes, and their sound velocities. We find that the anti-ferromagnetic insulator CaMnO3 breaks the Wiedemann-Franz (WF) law with the Lorenz number reaching four times that of ordinary metals at room temperature. Bismuth doping reduces both the electrical resistivity and the Seebeck coefficient of CaMnO3, thus it recovers the WF law behavior. Raman spectroscopy confirms that Bi0.03Ca0.97MnO3 has a lower Debye frequency as well as a shorter phonon lifetime. As a result, Bi0.03Ca0.97MnO3 exhibits superior thermoelectric properties over the pristine CaMnO3 due to the lower thermal conductivity and electronic resistivity.
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Submitted 14 April, 2021; v1 submitted 23 January, 2020;
originally announced January 2020.
