Showing 1–50 of 60 results for author: Sundararaman, R

Alkali Intercalation of Moire Heterostructures for Low-Loss Plasmonics

Authors: Ali Ghorashi, Nicholas Rivera, Ravishankar Sundararaman, Efthimios Kaxiras, John Joannopoulos, Marin Soljačić

Abstract: Two-dimensional metals generically support gapless plasmons with wavelengths well below the wavelength of free-space radiation at the same frequency. Typically, however, this substantial confinement of electromagnetic energy is associated with commensurately high losses, and mitigating such losses may only be achieved through judicious band structure engineering near the Fermi level. In a clean sy… ▽ More Two-dimensional metals generically support gapless plasmons with wavelengths well below the wavelength of free-space radiation at the same frequency. Typically, however, this substantial confinement of electromagnetic energy is associated with commensurately high losses, and mitigating such losses may only be achieved through judicious band structure engineering near the Fermi level. In a clean system, an isolated, moderately flat, band at the Fermi level with sufficiently high carrier density can support a plasmon that is immune to propagation losses up to some order in the electron-phonon interaction. However, proposed materials that satisfy these criteria have been ferromagnetic, structurally unstable, or otherwise difficult to fabricate. Here, we propose a class of band structure engineered materials that evade these typical pitfalls -- Moire heterostructures of hexagonal boron nitride intercalated with alkali atoms. We find that only sodium atoms engender a sufficiently isolated band with plasmons lossless at first order in the electron-phonon interaction. We calculate higher order electron-phonon losses and find that at frequencies of about $1$eV the electron-phonon decay mechanism is negligible -- leading to a contribution to the decay rate of about 10^7 Hz in a small frequency range. We next calculate losses from the electron-electron interaction and find that this is the dominant process -- leading plasmons to decay to lower frequency plasmons at a rate of around 10^14 Hz. △ Less

Submitted 15 May, 2025; originally announced May 2025.

Spatio-temporal spin transport from first principles

Authors: Mayada Fadel, Joshua Quinton, Mani Chandra, Mayank Gupta, Yuan Ping, Ravishankar Sundararaman

Abstract: We introduce a computational framework for first-principles density matrix transport within the Wigner function formalism to predict transport of quantum-mechanical degrees of freedom such as spin over long time and length scales. This framework facilitates simulation of spin dynamics and transport from first principles, while accounting for electron-phonon scattering at device length scales. We d… ▽ More We introduce a computational framework for first-principles density matrix transport within the Wigner function formalism to predict transport of quantum-mechanical degrees of freedom such as spin over long time and length scales. This framework facilitates simulation of spin dynamics and transport from first principles, while accounting for electron-phonon scattering at device length scales. We demonstrate this framework to elucidate the impact of various spin-orbit field profiles, such as Rashba and persistent spin helix, on coherent spin transport in several materials. Using graphene under an electric field as an example to illustrate the impact of electron-phonon scattering on incoherent transport, we show how the transport changes with the strength of scattering. We identify three distinct regimes of incoherent spin transport corresponding to the free induction decay, Dyakonov-Perel and Elliott-Yafet regimes of spin relaxation. In particular, we show that the spin diffusion length is insensitive to the strength of scattering within the Dyakonov-Perel regime. △ Less

Submitted 12 May, 2025; originally announced May 2025.

Comments: 5 pages, 3 figures

Nanomolding single-crystalline CoIn3 and RhIn3 nanowires

Authors: Nghiep Khoan Duong, Christian D. Multunas, Thomas Whoriskey, Mehrdad T. Kiani, Shanta R. Saha, Quynh P. Sam, Han Wang, Satya Kushwaha, Johnpierre Paglione, Ravishankar Sundararaman, Judy J. Cha

Abstract: Intermetallic compounds containing transition metals and group III-V metals tend to possess strong correlations and high catalytic activities, both of which can be enhanced via reduced dimensionality. Nanostructuring is an effective approach to explore this possibility, yet the synthesis of nanostructured intermetallics is challenging due to vast differences in melting points and vapor pressures o… ▽ More Intermetallic compounds containing transition metals and group III-V metals tend to possess strong correlations and high catalytic activities, both of which can be enhanced via reduced dimensionality. Nanostructuring is an effective approach to explore this possibility, yet the synthesis of nanostructured intermetallics is challenging due to vast differences in melting points and vapor pressures of the constituent elements. In this work, we demonstrate that this challenge can be overcome with thermomechanical nanomolding (TMNM), exemplified by the synthesis of intermetallic CoIn3 and RhIn3 nanowires. We show that TMNM successfully extrudes single-crystalline nanowires of these compounds down to the 20 nm diameter range, and the nanowires remain metallic with resistivity values higher than calculated bulk resistivity. We discuss possible effects of surface roughness scattering, vacancy-induced scattering, and surface oxidation, on the measured resistivities of the nanowires. For CoIn3 nanowires, the measured resistivity values are the first reported values for this compound. △ Less

Submitted 28 March, 2025; originally announced March 2025.

Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects

Authors: Yeryun Cheon, Mehrdad T. Kiani, Yi-Hsin Tu, Sushant Kumar, Nghiep Khoan Duong, Jiyoung Kim, Quynh P. Sam, Han Wang, Satya K. Kushwaha, Nicolas Ng, Seng Huat Lee, Sam Kielar, Chen Li, Dimitrios Koumoulis, Saif Siddique, Zhiqiang Mao, Gangtae Jin, Zhiting Tian, Ravishankar Sundararaman, Hsin Lin, Gengchiau Liang, Ching-Tzu Chen, Judy J. Cha

Abstract: Ongoing demands for smaller and more energy efficient electronic devices necessitate alternative interconnect materials with lower electrical resistivity at reduced dimensions. Despite the emergence of many promising candidates, synthesizing high quality nanostructures remains a major bottleneck in evaluating their performance. Here, we report the successful synthesis of Weyl semimetal NbAs nanowi… ▽ More Ongoing demands for smaller and more energy efficient electronic devices necessitate alternative interconnect materials with lower electrical resistivity at reduced dimensions. Despite the emergence of many promising candidates, synthesizing high quality nanostructures remains a major bottleneck in evaluating their performance. Here, we report the successful synthesis of Weyl semimetal NbAs nanowires via thermomechanical nanomolding, achieving single crystallinity and controlled diameters as small as 40 nm. Our NbAs nanowires exhibit a remarkably low room-temperature resistivity of 9.7 +/- 1.6 microOhm-cm, which is three to four times lower than their bulk counterpart. Theoretical calculations corroborate the experimental observations, attributing this exceptional resistivity reduction to surface dominant conduction with long carrier lifetime at finite temperatures. Further characterization of NbAs nanowires and bulk single crystals reveals high breakdown current density, robust stability, and superior thermal conductivity. Collectively, these properties highlight the strong potential of NbAs nanowires as next-generation interconnects, which can surpass the limitations of current copper-based interconnects. Technologically, our findings present a practical application of topological materials, while scientifically showcasing the fundamental properties uniquely accessible in nanoscale platforms. △ Less

Submitted 7 March, 2025; v1 submitted 6 March, 2025; originally announced March 2025.

Comments: 5 figures

Magnetic-field dependence of spin-phonon relaxation and dephasing due to g-factor fluctuations from first principles

Authors: Joshua Quinton, Mayada Fadel, Junqing Xu, Adela Habib, Mani Chandra, Yuan Ping, Ravishankar Sundararaman

Abstract: The electron spin decay lifetime in materials can be characterized by relaxation (T1) and irreversible (T2) and reversible (T2*) decoherence processes. Their interplay leads to a complex dependence of spin relaxation times on the direction and magnitude of magnetic fields, relevant for spintronics and quantum information applications. Here, we use real-time first-principles density matrix dynamics… ▽ More The electron spin decay lifetime in materials can be characterized by relaxation (T1) and irreversible (T2) and reversible (T2*) decoherence processes. Their interplay leads to a complex dependence of spin relaxation times on the direction and magnitude of magnetic fields, relevant for spintronics and quantum information applications. Here, we use real-time first-principles density matrix dynamics simulations to directly simulate Hahn echo measurements, disentangle dephasing from decoherence, and predict T1, T2 and T2* spin lifetimes. We show that g-factor fluctuations lead to non-trivial magnetic field dependence of each of these lifetimes in inversion-symmetric crystals of CsPbBr3 and silicon, even when only intrinsic spin-phonon scattering is present. Most importantly, fluctuations in the off-diagonal components of the g-tensor lead to a strong magnetic field dependence of even the T1 lifetime in silicon. Our calculations elucidate the detailed role of anisotropic g-factors in determining the spin dynamics even in simple, low spin-orbit coupling materials such as silicon. △ Less

Submitted 5 March, 2025; v1 submitted 27 November, 2024; originally announced November 2024.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 111, 115113 (2025)

Spin Dynamics in Hybrid Halide Perovskites -- Effect of Dynamical and Permanent Symmetry Breaking

Authors: Kejun Li, Junqing Xu, Uyen N. Huynh, Rikard Bodin, Mayank Gupta, Christian Multunas, Jacopo Simoni, Ravishankar Sundararaman, Zeev Valy Verdany, Yuan Ping

Abstract: The hybrid organic-inorganic halide perovskite (HOIP), for example MAPbBr3, exhibits extended spin lifetime and apparent spin lifetime anisotropy in experiments. The underlying mechanisms of these phenomena remain illusive. By utilizing our first-principles densitymatrix dynamics approach with quantum scatterings including electron-phonon and electronelectron interactions and self-consistent spino… ▽ More The hybrid organic-inorganic halide perovskite (HOIP), for example MAPbBr3, exhibits extended spin lifetime and apparent spin lifetime anisotropy in experiments. The underlying mechanisms of these phenomena remain illusive. By utilizing our first-principles densitymatrix dynamics approach with quantum scatterings including electron-phonon and electronelectron interactions and self-consistent spinorbit coupling, we present temperature- and magnetic field-dependent spin lifetimes in hybrid perovskites, in agreement with experimental observations. For centrosymmetric hybrid perovskite MAPbBr3, the experimentally observed spin lifetime anisotropy is mainly attributed to the dynamical Rashba effect arising from the interaction between organic and inorganic components and the rotation of the organic cation. For noncentrosymmetric perovskite, such as MPSnBr3, we found persistent spin helix texture at the conduction band minimum, which significantly enhances the spin lifetime anisotropy. Our study provides theoretical insight to spin dynamics in HOIP and strategies for controlling and optimizing spin transport. △ Less

Submitted 20 September, 2024; originally announced September 2024.

Bridging electronic and classical density-functional theory using universal machine-learned functional approximations

Authors: Michelle M. Kelley, Joshua Quinton, Kamron Fazel, Nima Karimitari, Christopher Sutton, Ravishankar Sundararaman

Abstract: The accuracy of density-functional theory (DFT) is determined by the quality of the approximate functionals, such as exchange-correlation in electronic DFT and the excess functional in the classical DFT formalism of fluids. The exact functional is highly nonlocal for both electrons and fluids, yet most approximate functionals are semi-local or nonlocal in a limited weighted-density form. Machine-l… ▽ More The accuracy of density-functional theory (DFT) is determined by the quality of the approximate functionals, such as exchange-correlation in electronic DFT and the excess functional in the classical DFT formalism of fluids. The exact functional is highly nonlocal for both electrons and fluids, yet most approximate functionals are semi-local or nonlocal in a limited weighted-density form. Machine-learned (ML) nonlocal density-functional approximations are promising in both electronic and classical DFT, but have so far employed disparate approaches with limited generality. Here, we formulate a universal approximation framework and training protocol for nonlocal ML functionals, combining features of equivariant convolutional neural networks and the weighted-density approximation. We prototype this approach for several 1D and quasi-1D problems and demonstrate that a functional with exactly the same hyperparameters achieves excellent accuracy for the hard-rod fluid, the inhomogeneous Ising model, the exact exchange functional for electrons, the electron kinetic energy functional for orbital-free DFT, as well as for liquid water with 1D inhomogeneities. These results lay the foundation for a universal ML approach to exact 3D functionals spanning electronic and classical DFT. △ Less

Submitted 8 October, 2024; v1 submitted 30 May, 2024; originally announced May 2024.

Comments: 12 pages, 7 figures

Journal ref: J. Chem. Phys. 161, 144101 (2024)

Static Subspace Approximation for Random Phase Approximation Correlation Energies: Implementation and Performance

Authors: Daniel Weinberg, Olivia A. Hull, Jacob M. Clary, Ravishankar Sundararaman, Derek Vigil-Fowler, Mauro Del Ben

Abstract: Developing theoretical understanding of complex reactions and processes at interfaces requires using methods that go beyond semilocal density functional theory to accurately describe the interactions between solvent, reactants and substrates. Methods based on many-body perturbation theory, such as the random phase approximation (RPA), have previously been limited due to their computational complex… ▽ More Developing theoretical understanding of complex reactions and processes at interfaces requires using methods that go beyond semilocal density functional theory to accurately describe the interactions between solvent, reactants and substrates. Methods based on many-body perturbation theory, such as the random phase approximation (RPA), have previously been limited due to their computational complexity. However, this is now a surmountable barrier due to the advances in computational power available, in particular through modern GPU-based supercomputers. In this work, we describe the implementation of RPA calculations within BerkeleyGW and show its favorable computational performance on large complex systems relevant for catalysis and electrochemistry applications. Our implementation builds off of the static subspace approximation which, by employing a compressed representation of the frequency dependent polarizability, enables the evaluation of the RPA correlation energy with significant acceleration and systematically controllable accuracy. We find that the computational cost of calculating the RPA correlation energy scales only linearly with system size for systems containing up to 50 thousand bands, and is expected to scale quadratically thereafter. We also show excellent strong scaling results across several supercomputers, demonstrating the performance and portability of this implementation. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Comments: 10 pages, 5 figures

BEAST DB: Grand-Canonical Database of Electrocatalyst Properties

Authors: Cooper Tezak, Jacob Clary, Sophie Gerits, Joshua Quinton, Benjamin Rich, Nicholas Singstock, Abdulaziz Alherz, Taylor Aubry, Struan Clark, Rachel Hurst, Mauro Del Ben, Christopher Sutton, Ravishankar Sundararaman, Charles Musgrave, Derek Vigil-Fowler

Abstract: We present BEAST DB, an open-source database comprised of ab initio electrochemical data computed using grand-canonical density functional theory in implicit solvent at consistent calculation parameters. The database contains over 20,000 surface calculations and covers a broad set of heterogeneous catalyst materials and electrochemical reactions. Calculations were performed at self-consistent fixe… ▽ More We present BEAST DB, an open-source database comprised of ab initio electrochemical data computed using grand-canonical density functional theory in implicit solvent at consistent calculation parameters. The database contains over 20,000 surface calculations and covers a broad set of heterogeneous catalyst materials and electrochemical reactions. Calculations were performed at self-consistent fixed potential as well as constant charge to facilitate comparisons to the computational hydrogen electrode. This article presents common use cases of the database to rationalize trends in catalyst activity, screen catalyst material spaces, understand elementary mechanistic steps, analyze electronic structure, and train machine learning models to predict higher fidelity properties. Users can interact graphically with the database by querying for individual calculations to gain granular understanding of reaction steps or by querying for an entire reaction pathway on a given material using an interactive reaction pathway tool. BEAST DB will be periodically updated, with planned future updates to include advanced electronic structure data, surface speciation studies, and greater reaction coverage. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Comments: 24 pages, 8 figures

Challenges and Opportunities in Searching for Rashba-Dresselhaus Materials for Efficient Spin-Charge Interconversion at Room Temperature

Authors: Zixu Wang, Zhizhong Chen, Rui Xu, Hanyu Zhu, Ravishankar Sundararaman, Jian Shi

Abstract: Spintronic logic devices require efficient spin-charge interconversion: converting charge current to spin current and spin current to charge current. In spin-orbit materials that are regarded as the most promising candidate for spintronic logic devices, one mechanism that is responsible for spin-charge interconversion is Edelstein and inverse Edelstein effects based on spin-momentum locking in mat… ▽ More Spintronic logic devices require efficient spin-charge interconversion: converting charge current to spin current and spin current to charge current. In spin-orbit materials that are regarded as the most promising candidate for spintronic logic devices, one mechanism that is responsible for spin-charge interconversion is Edelstein and inverse Edelstein effects based on spin-momentum locking in materials with Rashba-type spin-orbit coupling. Over last decade, there has been rapid progresses for increasing interconversion efficiencies due to the Edelstein effect in a few Rashba-Dresselhaus materials and topological insulators, making Rashba spin-momentum locking a promising technological solution for spin-orbit logic devices. However, despite the rapid progress that leads to high spin-charge interconversion efficiency at cryogenic temperatures, the room-temperature efficiency needed for technological applications is still low. This paper presents our understanding on the challenges and opportunities in searching for Rashba-Dresselhaus materials for efficient spin-charge interconversion at room temperature by focusing on materials properties such as Rashba coefficients, momentum relaxation times, spin-momentum locking relations and electrical conductivities. △ Less

Submitted 27 January, 2024; originally announced January 2024.

Comments: 5 figures

1D-confined crystallization routes for tungsten phosphides

Authors: Gangtae Jin, Christian D. Multunas, James L. Hart, Mehrdad T. Kiani, Quynh P. Sam, Han Wang, Yeryun Cheon, Khoan Duong, David J. Hynek, Hyeuk Jin Han, Ravishankar Sundararaman, Judy J. Cha

Abstract: Topological materials confined in one-dimension (1D) can transform computing technologies, such as 1D topological semimetals for nanoscale interconnects and 1D topological superconductors for fault-tolerant quantum computing. As such, understanding crystallization of 1D-confined topological materials is critical. Here, we demonstrate 1D-confined crystallization routes during template-assisted nano… ▽ More Topological materials confined in one-dimension (1D) can transform computing technologies, such as 1D topological semimetals for nanoscale interconnects and 1D topological superconductors for fault-tolerant quantum computing. As such, understanding crystallization of 1D-confined topological materials is critical. Here, we demonstrate 1D-confined crystallization routes during template-assisted nanowire synthesis where we observe diameter-dependent phase selectivity for topological metal tungsten phosphides. A phase bifurcation occurs to produce tungsten monophosphide and tungsten diphosphide at the cross-over nanowire diameter of ~ 35 nm. Four-dimensional scanning transmission electron microscopy was used to identify the two phases and to map crystallographic orientations of grains at a few nm resolution. The 1D-confined phase selectivity is attributed to the minimization of the total surface energy, which depends on the nanowire diameter and chemical potentials of precursors. Theoretical calculations were carried out to construct the diameter-dependent phase diagram, which agrees with experimental observations. Our find-ings suggest a new crystallization route to stabilize topological materials confined in 1D. △ Less

Submitted 20 September, 2023; originally announced September 2023.

Comments: 5 figures

Interfacial Hot Carrier Collection Controls Plasmonic Chemistry

Authors: Fatemeh Kiani, Alan R. Bowman, Milad Sabzehparvar, Can O. Karaman, Ravishankar Sundararaman, Giulia Tagliabue

Abstract: Harnessing non-equilibrium hot carriers from plasmonic metal nanostructures constitutes a vibrant research field. It promises to enable control of activity and selectivity of photochemical reactions, especially for solar fuel generation. However, a comprehensive understanding of the interplay of plasmonic hot carrier-driven processes in metal/semiconducting heterostructures has remained elusive. I… ▽ More Harnessing non-equilibrium hot carriers from plasmonic metal nanostructures constitutes a vibrant research field. It promises to enable control of activity and selectivity of photochemical reactions, especially for solar fuel generation. However, a comprehensive understanding of the interplay of plasmonic hot carrier-driven processes in metal/semiconducting heterostructures has remained elusive. In this work, we reveal the complex interdependence between plasmon excitation, hot carrier generation, transport and interfacial collection in plasmonic photocatalytic devices, uniquely determining the charge injection efficiencies at the solid/solid and solid/liquid interfaces. Interestingly, by measuring the internal quantum efficiency of ultrathin (14 to 33 nm) single-crystalline plasmonic gold (Au) nanoantenna arrays on titanium dioxide substrates, we find that the performance of the device is governed by hot hole collection at the metal/electrolyte interface. In particular, by combining a solid- and liquid-state experimental approach with ab initio simulations, we show a more efficient collection of high-energy d-band holes traveling in [111] orientation, resulting in a stronger oxidation reaction at the {111} surfaces of the nanoantenna. These results thus establish new guidelines for the design and optimization of plasmonic photocatalytic systems and optoelectronic devices. △ Less

Submitted 18 July, 2023; originally announced July 2023.

Journal ref: ACS Energy Lett. 2023, 8, 10, 4242-4250

Quantum-mechanical effects in photoluminescence from thin crystalline gold films

Authors: Alan R. Bowman, Álvaro Rodríguez Echarri, Fatemeh Kiani, Fadil Iyikanat, Ted V. Tsoulos, Joel D. Cox, Ravishankar Sundararaman, F. Javier García de Abajo, Giulia Tagliabue

Abstract: Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its microscopic origin strongly debated, and its potential for unravelling nanoscale carrier dynamics largely unexploited. Here, we reveal quantum-… ▽ More Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its microscopic origin strongly debated, and its potential for unravelling nanoscale carrier dynamics largely unexploited. Here, we reveal quantum-mechanical effects emanating in the luminescence from thin monocrystalline gold flakes. Specifically, we present experimental evidence, supported by first-principles simulations, to demonstrate its photoluminescence origin when exciting in the interband regime. Our model allows us to identify changes to the measured gold luminescence due to quantum-mechanical effects as the gold film thickness is reduced. Excitingly, such effects are observable in the luminescence signal from flakes up to 40 nm in thickness, associated with the out-of-plane discreteness of the electronic band structure near the Fermi level. We qualitatively reproduce the observations with first-principles modelling, thus establishing a unified description of luminescence in gold and enabling its widespread application as a probe of carrier dynamics and light-matter interactions in this material. Our study paves the way for future explorations of hot-carriers and charge-transfer dynamics in a multitude of material systems. △ Less

Submitted 25 September, 2023; v1 submitted 17 July, 2023; originally announced July 2023.

Comments: Main text 21 pages and 4 figures. Supplemental Information 33 pages and 17 figures

Journal ref: Light. Sci. Appl. 13, 91 (2024)

First-principles molten salt phase diagrams through thermodynamic integration

Authors: Tanooj Shah, Kamron Fazel, Jie Lian, Liping Huang, Yunfeng Shi, Ravishankar Sundararaman

Abstract: Precise prediction of phase diagrams in molecular dynamics (MD) simulations is challenging due to the simultaneous need for long time scales, large length scales and accurate interatomic potentials. We show that thermodynamic integration (TI) from low-cost force fields to neural network potentials (NNPs) trained using density-functional theory (DFT) enables rapid first-principles prediction of the… ▽ More Precise prediction of phase diagrams in molecular dynamics (MD) simulations is challenging due to the simultaneous need for long time scales, large length scales and accurate interatomic potentials. We show that thermodynamic integration (TI) from low-cost force fields to neural network potentials (NNPs) trained using density-functional theory (DFT) enables rapid first-principles prediction of the solid-liquid phase boundary in the model salt NaCl. We use this technique to compare the accuracy of several DFT exchange-correlation functionals for predicting the NaCl phase boundary, and find that the inclusion of dispersion interactions is critical to obtain good agreement with experiment. Importantly, our approach introduces a method to predict solid-liquid phase boundaries for any material at an ab-initio level of accuracy, with the majority of the computational cost at the level of classical potentials. △ Less

Submitted 4 June, 2023; originally announced June 2023.

A fully ab initio approach to inelastic atom-surface scattering

Authors: Michelle M. Kelley, Ravishankar Sundararaman, Tomás A. Arias

Abstract: We introduce a fully ab initio theory for inelastic scattering of any atom from any surface exciting single phonons, and apply the theory to helium scattering from Nb(100). The key aspect making our approach general is a direct first-principles evaluation of the scattering atom-electron vertex. By correcting misleading results from current state-of-the-art theories, this fully ab initio approach w… ▽ More We introduce a fully ab initio theory for inelastic scattering of any atom from any surface exciting single phonons, and apply the theory to helium scattering from Nb(100). The key aspect making our approach general is a direct first-principles evaluation of the scattering atom-electron vertex. By correcting misleading results from current state-of-the-art theories, this fully ab initio approach will be critical in guiding and interpreting experiments that adopt next-generation, non-destructive atomic beam scattering. △ Less

Submitted 16 November, 2023; v1 submitted 2 June, 2023; originally announced June 2023.

Comments: 6 pages, 5 figures

Improving the reliability of machine learned potentials for modeling inhomogenous liquids

Authors: Kamron Fazel, Nima Karimitari, Tanooj Shah, Christopher Sutton, Ravishankar Sundararaman

Abstract: The atomic-scale response of inhomogeneous fluids at interfaces and surrounding solute particles plays a critical role in governing chemical, electrochemical and biological processes at such interfaces. Classical molecular dynamics simulations have been applied extensively to simulate the response of inhomogeneous fluids directly, and as inputs to classical density functional theory, but are limit… ▽ More The atomic-scale response of inhomogeneous fluids at interfaces and surrounding solute particles plays a critical role in governing chemical, electrochemical and biological processes at such interfaces. Classical molecular dynamics simulations have been applied extensively to simulate the response of inhomogeneous fluids directly, and as inputs to classical density functional theory, but are limited by the accuracy of the underlying empirical force fields. Here, we deploy neural network potentials (NNPs) trained to ab initio simulations to accurately predict the inhomogeneous response of two widely different fluids: liquid water and molten NaCl. Although NNPs can be readily trained to model complex bulk systems across a range of state points, in order to appropriately model a fluid's response at an interface, inhomogeneous configurations must be included in the training data. We establish protocols based on molecular dynamics simulations in external atomic potentials in order to sufficiently sample the correct configurations of inhomogeneous fluids. We show that NNPs trained to inhomogeneous fluid configurations can predict several properties such as the density response, surface tension and size-dependent cavitation free energies in water and molten NaCl corresponding to ab initio interactions more accurately than empirical force fields. This work therefore provides a first demonstration and framework for extracting the response of inhomogeneous fluids from first principles for classical density-functional treatment of fluids free from empirical potentials. △ Less

Submitted 27 November, 2023; v1 submitted 1 June, 2023; originally announced June 2023.

Comments: 8 pages, 4 figures

Circular Dichroism of Crystals from First Principles

Authors: Christian Multunas, Andrew Grieder, Junqing Xu, Yuan Ping, Ravishankar Sundararaman

Abstract: Chiral crystals show promise for spintronic technologies on account of their high spin selectivity, which has led to significant recent interest in quantitative characterization and first-principles prediction of their spin-optoelectronics properties. Here, we outline a computational framework for efficient ab-initio calculations of circular dichroism (CD) in crystalline materials. We leverage dir… ▽ More Chiral crystals show promise for spintronic technologies on account of their high spin selectivity, which has led to significant recent interest in quantitative characterization and first-principles prediction of their spin-optoelectronics properties. Here, we outline a computational framework for efficient ab-initio calculations of circular dichroism (CD) in crystalline materials. We leverage direct calculations of orbital angular momentum and quadrupole matrix element calculations in density-functional theory (DFT) and Wannier interpolation to calculate CD in complex materials, removing the need for band convergence and accelerating Brillouin-zone convergence compared to prior approaches. We find strong agreement with measured CD signals in molecules and crystals ranging in complexity from small bulk unit cells to 2D hybrid perovskites, and show the importance of the quadrupole contribution to the anisotropic CD in crystals. Spin-orbit coupling affects the CD of crystals with heavier atoms, as expected, but this is primarily due to changes in the electronic energies, rather than due to direct contributions from the spin matrix elements. We showcase the capability to predict CD for complex structures on a 2D hybrid perovskite, finding strong orientation dependence and identifying the eigen-directions of the unit cell with the strongest CD. We additionally decompose CD into separate contributions from inorganic, organic, and mixed organic-inorganic transitions, finding the chiral molecules to dominate the CD, with the inorganic lattice contributing at higher frequencies in specific directions. This unprecedented level of detail in CD predictions in crystals will facilitate experimental development of complex chiral crystals for spin selectivity. △ Less

Submitted 27 November, 2023; v1 submitted 5 March, 2023; originally announced March 2023.

Comments: 12 pages, 6 figures

Journal ref: Phys. Rev. Materials 7, 123801 (2023)

Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids

Authors: Adbhut Gupta, Gitansh Kataria, Mani Chandra, Siddhardh C. Morampudi, Saeed Fallahi, Geoff C. Gardner, Michael J. Manfra, Ravishankar Sundararaman, Jean J. Heremans

Abstract: Carrier transport in materials is often diffusive due to momentum-relaxing scattering with phonons and defects. Suppression of momentum-relaxing scattering can lead to the ballistic and hydrodynamic transport regimes, wherein complex non-Ohmic current flow patterns, including current vortices, can emerge. In the ballistic regime addressed here, transverse magnetic focusing is habitually understood… ▽ More Carrier transport in materials is often diffusive due to momentum-relaxing scattering with phonons and defects. Suppression of momentum-relaxing scattering can lead to the ballistic and hydrodynamic transport regimes, wherein complex non-Ohmic current flow patterns, including current vortices, can emerge. In the ballistic regime addressed here, transverse magnetic focusing is habitually understood in a familiar single-particle picture of carriers injected from a source, following ballistic cyclotron orbits and reaching a detector. We report on a distinctive nonlocal magnetoresistance phenomenon exclusive to fermions, in an enclosed mesoscopic geometry wherein transverse focusing magnetoresistance peaks also occur at values of the cyclotron diameter that are incommensurate with the distance between the source and detector. In low-temperature experiments and simulations using GaAs/AlGaAs heterostructures with high electron mobility, we show that the peaks occur independently of the location of the detector, and only depend on the source-drain separation. We reproduce the experimental findings using simulations of ballistic transport in both semiclassical and quantum-coherent transport models. The periodicity of magnetic field at which the peaks occur is matched to the lithographically defined device scale. It is found that, unlike in transverse magnetic focusing, the magnetoresistance structure cannot be attributed to any set of ordered single-particle trajectories but instead requires accounting for the collective dynamics of the fermion distribution and of all particle trajectories. The magnetoresistance is further associated with current flow vorticity, a collective phenomenon. △ Less

Submitted 31 January, 2023; originally announced February 2023.

Comments: 11 figures

Surface-dominated conductance scaling in Weyl semimetal NbAs

Authors: Sushant Kumar, Yi-Hsin Tu, Luo Sheng, Nicholas A. Lanzillo, Tay-Rong Chang, Gengchiau Liang, Ravishankar Sundararaman, Hsin Lin, Ching-Tzu Chen

Abstract: Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental understanding of surface-state transport in nanoscale topological semimetals. Here, we investigate quantum transport in a prototypical topological semimetal NbAs to eval… ▽ More Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental understanding of surface-state transport in nanoscale topological semimetals. Here, we investigate quantum transport in a prototypical topological semimetal NbAs to evaluate the potential of this class of materials for beyond-Cu interconnects in highly-scaled integrated circuits. Using density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) calculations, we show that the resistance-area RA product in NbAs films decreases with decreasing thickness at the nanometer scale, in contrast to a nearly constant RA product in ideal Cu films. This anomalous scaling originates from the disproportionately large number of surface conduction states which dominate the ballistic conductance by up to 70% in NbAs thin films. We also show that this favorable RA scaling persists even in the presence of surface defects, in contrast to RA sharply increasing with reducing thickness for films of conventional metals, such as Cu, in the presence of surface defects. These results underscore the promise of topological semimetals like NbAs as future back-end-of-line (BEOL) interconnect metals. △ Less

Submitted 3 May, 2024; v1 submitted 18 November, 2022; originally announced November 2022.

Journal ref: npj Comput Mater 10, 84 (2024)

How Spin Relaxes and Dephases in Bulk Halide Perovskites

Authors: Junqing Xu, Kejun Li, Uyen N. Huynh, Jinsong Huang, Ravishankar Sundararaman, Valy Vardeny, Yuan Ping

Abstract: Spintronics in halide perovskites has drawn significant attention in recent years, due to highly tunable spin-orbit fields and intriguing interplay with lattice symmetry. Spin lifetime -- a key parameter that determines the applicability of materials for spintronics and spin-based quantum information applications -- has been extensively measured in halide perovskites, but not yet assessed from fir… ▽ More Spintronics in halide perovskites has drawn significant attention in recent years, due to highly tunable spin-orbit fields and intriguing interplay with lattice symmetry. Spin lifetime -- a key parameter that determines the applicability of materials for spintronics and spin-based quantum information applications -- has been extensively measured in halide perovskites, but not yet assessed from first-principles calculations. Here, we leverage our recently-developed \emph{ab initio} density-matrix dynamics framework to compute the spin relaxation time ($T_{1}$) and ensemble spin dephasing time ($T_{2}^{*}$) in a prototype halide perovskite, namely CsPbBr$_{3}$ with self-consistent spin-orbit coupling (SOC) and quantum descriptions of the electron scattering processes. We also implement the Landé $g$-factor for solids from first principles and take it into account in our dynamics, which is required to accurately capture spin dephasing at external magnetic fields. We thereby predict intrinsic spin lifetimes as an upper bound for experiments, identify the dominant spin relaxation pathways, and evaluate the dependence on temperature, external fields, carrier density,and impurities. Importantly, we find that the Fr{ö}hlich interaction that dominates carrier relaxation contributes negligibly to spin relaxation, consistent with the spin-conserving nature of this interaction. We investigated the effect of spin-orbit field with inversion asymmetry on spin lifetime, and we demonstrated from our calculation, persistent spin helix can enhance spin lifetime when the spin-split is large, but it can not be realized by Rashba SOC. Our theoretical approach may lead to new strategies to optimize spin and carrier transport properties in spintronics and quantum information applications. △ Less

Submitted 24 October, 2023; v1 submitted 31 October, 2022; originally announced October 2022.

Comments: 10 pages, 6 figures

Topological Metal MoP Nanowire for Interconnect

Authors: Hyeuk Jin Han, Sushant Kumar, Xiaoyang Ji, James L. Hart, Gangtae Jin, David J. Hynek, Quynh P. Sam, Vicky Hasse, Claudia Felser, David G. Cahill, Ravishankar Sundararaman, Judy J. Cha

Abstract: The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries of the interconnects at the nanoscale. Topological semime… ▽ More The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries of the interconnects at the nanoscale. Topological semimetals, owing to their topologically protected surface states and suppressed electron backscattering, are promising material candidates to potentially replace current Cu interconnects as low-resistance interconnects. Here, we report the attractive resistivity scaling of topological metal MoP nanowires and show that the resistivity values are comparable to those of Cu interconnects below 500 nm$^2$ cross-section areas. More importantly, we demonstrate that the dimensional scaling of MoP nanowires, in terms of line resistance versus total cross-sectional area, is superior to those of effective Cu and barrier-less Ru interconnects, suggesting MoP is an attractive solution to the current scaling challenge of Cu interconnects. △ Less

Submitted 4 August, 2022; originally announced August 2022.

Comments: 4 figures

Fermi surface anisotropy in plasmonic metals increases the potential for efficient hot carrier extraction

Authors: Sushant Kumar, Christian Multunas, Ravishankar Sundararaman

Abstract: Realizing the potential of plasmonic hot carrier harvesting for energy conversion and photodetection requires new materials that resolve the bottleneck of extracting carriers prior to energy relaxation within the metal. Using first-principles calculations of optical response and carrier transport properties, we show that directional conductors with Fermi velocities restricted predominantly to one… ▽ More Realizing the potential of plasmonic hot carrier harvesting for energy conversion and photodetection requires new materials that resolve the bottleneck of extracting carriers prior to energy relaxation within the metal. Using first-principles calculations of optical response and carrier transport properties, we show that directional conductors with Fermi velocities restricted predominantly to one or two directions present significant advantages for efficient hot carrier harvesting. We show that the optical response of film-like conductors, PtCoO$_2$ and Cr$_2$AlC, resemble that of 2D metals, while that of wire-like conductors, CoSn and YCo$_3$B$_2$, resemble that of 1D metals, which can lead to high mode confinement and efficient light collection in small dimensions, while still working with 3D materials with high carrier densities. Carrier lifetimes and transport distances in these materials, especially in PtCoO$_2$ and CoSn, are competitive with noble metals. Most importantly, we predict that carrier injection efficiency from all of these materials into semiconductors can exceed 10% due to the small component of carrier velocity parallel to the metal surface, substantially improving upon the typical less than 0.1% injection efficiency from noble metals into semiconductors. △ Less

Submitted 9 December, 2022; v1 submitted 10 May, 2022; originally announced May 2022.

Comments: 9 pages, 8 figures, SI within source archive

Journal ref: Phys. Rev. Materials 6, 125201 (2022)

Ultralow Electron-Surface Scattering in Nanoscale Metals Leveraging Fermi Surface Anisotropy

Authors: Sushant Kumar, Christian Multunas, Benjamin Defay, Daniel Gall, Ravishankar Sundararaman

Abstract: Increasing resistivity of metal wires with reducing nanoscale dimensions is a major performance bottleneck of semiconductor computing technologies. We show that metals with suitably anisotropic Fermi velocity distributions can strongly suppress electron scattering by surfaces and outperform isotropic conductors such as copper in nanoscale wires. We derive a corresponding descriptor for the resisti… ▽ More Increasing resistivity of metal wires with reducing nanoscale dimensions is a major performance bottleneck of semiconductor computing technologies. We show that metals with suitably anisotropic Fermi velocity distributions can strongly suppress electron scattering by surfaces and outperform isotropic conductors such as copper in nanoscale wires. We derive a corresponding descriptor for the resistivity scaling of anisotropic conductors, screen thousands of metals using first-principles calculations of this descriptor and identify the most promising materials for nanoscale interconnects. Previously-proposed layered conductors such as MAX phases and delafossites show promise in thin films, but not in narrow wires due to increased scattering from side walls. We find that certain intermetallics (notably CoSn) and borides (such as YCo$_3$B$_2$) with one-dimensionally anisotropic Fermi velocities are most promising for narrow wires. Combined with first-principles electron-phonon scattering predictions, we show that the proposed materials exhibit 2-3x lower resistivity than copper at 5 nm wire dimensions. △ Less

Submitted 28 April, 2022; originally announced April 2022.

Comments: 11 pages, 5 figures, 1 table; SI within source archive

Journal ref: Phys. Rev. Materials 6, 085002 (2022)

Giant Spin Lifetime Anisotropy and Spin-Valley Locking in Silicene and Germanene from First-Principles Density-Matrix Dynamics

Authors: Junqing Xu, Hiroyuki Takenaka, Adela Habib, Ravishankar Sundararaman, Yuan Ping

Abstract: Through First-Principles real-time Density-Matrix (FPDM) dynamics simulations, we investigate spin relaxation due to electron-phonon and electron-impurity scatterings with spin-orbit coupling in two-dimensional Dirac materials - silicene and germanene, at finite temperatures and under external fields. We discussed the applicability of conventional descriptions of spin relaxation mechanisms by Elli… ▽ More Through First-Principles real-time Density-Matrix (FPDM) dynamics simulations, we investigate spin relaxation due to electron-phonon and electron-impurity scatterings with spin-orbit coupling in two-dimensional Dirac materials - silicene and germanene, at finite temperatures and under external fields. We discussed the applicability of conventional descriptions of spin relaxation mechanisms by Elliott-Yafet (EY) and D'yakonov-Perel' (DP) compared to our FPDM method, which is determined by a complex interplay of intrinsic spin-orbit coupling, external fields, and electron-phonon coupling strength, beyond crystal symmetry. For example, the electric field dependence of spin relaxation time is close to DP mechanism for silicene at room temperature, but rather similar to EY mechanism for germanene. Due to its stronger spin-orbit coupling strength and buckled structure in sharp contrast to graphene, germanene has a giant spin lifetime anisotropy and spin valley locking effect under nonzero Ez and relatively low temperature. More importantly, germanene has extremely long spin lifetime (~100 ns at 50 K) and ultrahigh carrier mobility, which makes it advantageous for spin-valleytronic applications. △ Less

Submitted 3 October, 2021; originally announced October 2021.

Comments: 9 pages, 4 figures

Electric fields and substrates dramatically accelerate spin relaxation in graphene

Authors: Adela Habib, Junqing Xu, Yuan Ping, Ravishankar Sundararaman

Abstract: Electrons in graphene are theoretically expected to retain spin states much longer than most materials, making graphene a promising platform for spintronics and quantum information technologies. Here, we use first-principles density-matrix (FPDM) dynamics simulations to show that interaction with electric fields and substrates strongly enhance spin relaxation through scattering with phonons. Conse… ▽ More Electrons in graphene are theoretically expected to retain spin states much longer than most materials, making graphene a promising platform for spintronics and quantum information technologies. Here, we use first-principles density-matrix (FPDM) dynamics simulations to show that interaction with electric fields and substrates strongly enhance spin relaxation through scattering with phonons. Consequently, the relaxation time at room temperature reduces from microseconds in free-standing graphene to nanoseconds in graphene on hexagonal boron nitride (hBN) substrate, the order of magnitude typically measured in experiments. Further, inversion symmetry breaking by hBN introduces a stronger asymmetry in electron and hole spin lifetimes, than predicted by the conventional D'yakonov-Perel' (DP) model for spin relaxation. Deviations from the conventional DP model are stronger for in-plane spin relaxation, resulting in out-of-plane to in-plane lifetime ratios much greater than 1/2 with a maximum close to the Dirac point. These FPDM results, independent of symmetry-specific assumptions or material-dependent parameters, also validate recent modifications of the DP model to explain such deviations. Overall, our results indicate that spin-phonon relaxation in the presence of substrates may be more important in graphene than typically assumed, requiring consideration for graphene-based spin technologies at room temperature. △ Less

Submitted 16 March, 2022; v1 submitted 21 December, 2020; originally announced December 2020.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. B 105, 115122 (2022)

Ab initio Ultrafast Spin Dynamics in Solids

Authors: Junqing Xu, Adela Habib, Ravishankar Sundararaman, Yuan Ping

Abstract: Spin relaxation and decoherence is at the heart of spintronics and spin-based quantum information science. Currently, theoretical approaches that can accurately predict spin relaxation of general solids including necessary scattering pathways and capable for ns to ms simulation time are urgently needed. We present a first-principles real-time density-matrix approach based on Lindblad dynamics to s… ▽ More Spin relaxation and decoherence is at the heart of spintronics and spin-based quantum information science. Currently, theoretical approaches that can accurately predict spin relaxation of general solids including necessary scattering pathways and capable for ns to ms simulation time are urgently needed. We present a first-principles real-time density-matrix approach based on Lindblad dynamics to simulate ultrafast spin dynamics for general solid-state systems. Through the complete first-principles descriptions of pump, probe and scattering processes including electron-phonon, electron-impurity and electron-electron scatterings with self-consistent electronic spin-orbit couplings, our method can directly simulate the ultrafast pump-probe measurements for coupled spin and electron dynamics over ns at any temperatures and doping levels. We first apply this method to a prototypical system GaAs and obtain excellent agreement with experiments. We find that the relative contributions of different scattering mechanisms and phonon modes differ considerably between spin and carrier relaxation processes. In sharp contrast to previous work based on model Hamiltonians, we point out that the electron-electron scattering is negligible at room temperature but becomes dominant at low temperatures for spin relaxation in n-type GaAs. We further examine ultrafast dynamics in novel spin-valleytronic materials - monolayer and bilayer WSe2 with realistic defects. We find that spin relaxation is highly sensitive to local symmetry and chemical bonds around defects. Our work provides a predictive computational platform for spin dynamics in solids, which has unprecedented potentials for designing new materials ideal for spintronics and quantum information technology. △ Less

Submitted 30 September, 2021; v1 submitted 15 December, 2020; originally announced December 2020.

Comments: 10 pages, 8 figures

Ab initio many-body photoemission theory of transverse energy distribution of photoelectrons: PbTe(111) as a case study with experimental comparisons

Authors: J. Kevin Nangoi, Siddharth Karkare, Ravishankar Sundararaman, Howard A. Padmore, T. A. Arias

Abstract: This manuscript presents, to our knowledge, the first fully ab initio many-body photoemission framework to predict the transverse momentum distributions and the mean transverse energies (MTEs) of photoelectrons from single-crystal photocathodes. The need to develop such a theory stems from the lack of studies that provide complete understanding of the underlying fundamental processes governing the… ▽ More This manuscript presents, to our knowledge, the first fully ab initio many-body photoemission framework to predict the transverse momentum distributions and the mean transverse energies (MTEs) of photoelectrons from single-crystal photocathodes. The need to develop such a theory stems from the lack of studies that provide complete understanding of the underlying fundamental processes governing the transverse momentum distribution of photoelectrons emitted from single crystals. For example, initial predictions based on density-functional theory calculations of effective electron masses suggested that the (111) surface of PbTe would produce very small MTEs ($\leq$ 15 meV), whereas our experiments yielded MTEs ten to twenty times larger than these predictions, and also exhibited a lower photoemission threshold than predicted. The ab initio framework presented in this manuscript correctly reproduces the magnitude of the MTEs from our measurements in PbTe(111) and also the observed photoemission below the predicted threshold. Our results show that photoexcitations into bulk-like states and coherent, many-body electron-photon-phonon scattering processes, both of which initial predictions ignored, indeed play important roles in photoemission from PbTe(111). Finally, from the lessons learned, we recommend a procedure for rapid computational screening of potential single-crystal photocathodes for applications in next-generation ultrafast electron diffraction and X-ray free-electron lasers, which will enable new, significant advances in condensed matter research. △ Less

Submitted 25 June, 2020; v1 submitted 21 June, 2020; originally announced June 2020.

Comments: Submitting to Physical Review B

Journal ref: Phys. Rev. B 104, 115132 (2021)

Spin-phonon relaxation from a universal \emph{ab initio} density-matrix approach

Authors: Junqing Xu, Adela Habib, Sushant Kumar, Feng Wu, Ravishankar Sundararaman, Yuan Ping

Abstract: Designing new quantum materials with long-lived electron spin states urgently requires a general theoretical formalism and computational technique to reliably predict intrinsic spin relaxation times. We present a new, accurate and universal first-principles methodology based on Lindbladian dynamics of density matrices to calculate spin-phonon relaxation time ($τ_s$) of solids with arbitrary spin m… ▽ More Designing new quantum materials with long-lived electron spin states urgently requires a general theoretical formalism and computational technique to reliably predict intrinsic spin relaxation times. We present a new, accurate and universal first-principles methodology based on Lindbladian dynamics of density matrices to calculate spin-phonon relaxation time ($τ_s$) of solids with arbitrary spin mixing and crystal symmetry. This method describes contributions of Elliott-Yafet (EY) and D'yakonov-Perel' (DP) mechanisms to spin relaxation for systems with and without inversion symmetry on an equal footing. We show that intrinsic spin and momentum relaxation times both decrease with increasing temperature; however, for the DP mechanism, spin relaxation time varies inversely with extrinsic scattering time. We predict large anisotropy of spin lifetime in transition metal dichalcogenides. The excellent agreement with experiments for a broad range of materials underscores the predictive capability of our method for properties critical to quantum information science. △ Less

Submitted 2 April, 2020; v1 submitted 30 October, 2019; originally announced October 2019.

Comments: 12 pages, 7 figures

Substrate effects on charged defects in two-dimensional materials

Authors: Dan Wang, Ravishankar Sundararaman

Abstract: Two-dimensional (2D) materials are strongly affected by the dielectric environment including substrates, making it an important factor in designing materials for quantum and electronic technologies. Yet, first-principles evaluation of charged defect energetics in 2D materials typically do not include substrates due to the high computational cost. We present a general continuum model approach to in… ▽ More Two-dimensional (2D) materials are strongly affected by the dielectric environment including substrates, making it an important factor in designing materials for quantum and electronic technologies. Yet, first-principles evaluation of charged defect energetics in 2D materials typically do not include substrates due to the high computational cost. We present a general continuum model approach to incorporate substrate effects directly in density-functional theory calculations of charged defects in the 2D material alone. We show that this technique accurately predicts charge defect energies compared to much more expensive explicit substrate calculations, but with the computational expediency of calculating defects in free-standing 2D materials. Using this technique, we rapidly predict the substantial modification of charge transition levels of two defects in MoS$_2$ and ten defects promising for quantum technologies in hBN, due to SiO$_2$ and diamond substrates. This establishes a foundation for high-throughput computational screening of new quantum defects in 2D materials that critically accounts for substrate effects. △ Less

Submitted 14 August, 2019; originally announced August 2019.

Comments: 8 pages and 7 figures; supplemental material included as SI.pdf in source archive

Journal ref: Phys. Rev. Materials 3, 083803 (2019)

Ultrafast Studies of Hot-Hole Dynamics in Au/p-GaN Heterostructures

Authors: Giulia Tagliabue, Joseph S. DuChene, Mohamed Abdellah, Adela Habib, Yocefu Hattori, Kaibo Zheng, Sophie E. Canton, David J. Gosztola, Wen-Hui Cheng, Ravishankar Sundararaman, Jacinto Sa, Harry A. Atwater

Abstract: Harvesting non-equilibrium hot carriers from photo-excited metal nanoparticles has enabled plasmon-driven photochemical transformations and tunable photodetection with resonant nanoantennas. Despite numerous studies on the ultrafast dynamics of hot electrons, to date, the temporal evolution of hot holes in metal-semiconductor heterostructures remains unknown. An improved understanding of the carri… ▽ More Harvesting non-equilibrium hot carriers from photo-excited metal nanoparticles has enabled plasmon-driven photochemical transformations and tunable photodetection with resonant nanoantennas. Despite numerous studies on the ultrafast dynamics of hot electrons, to date, the temporal evolution of hot holes in metal-semiconductor heterostructures remains unknown. An improved understanding of the carrier dynamics in hot-hole-driven systems is needed to help expand the scope of hot-carrier optoelectronics beyond hot-electron-based devices. Here, using ultrafast transient absorption spectroscopy, we show that plasmon-induced hot-hole injection from gold (Au) nanoparticles into the valence band of p-type gallium nitride (p-GaN) occurs within 200 fs, placing hot-hole transfer on a similar timescale as hot-electron transfer. We further observed that the removal of hot holes from below the Au Fermi level exerts a discernible influence on the thermalization of hot electrons above it, reducing the peak electronic temperature and decreasing the electron-phonon coupling time relative to Au samples without a pathway for hot-hole collection. First principles calculations corroborate these experimental observations, suggesting that hot-hole injection modifies the relaxation dynamics of hot electrons in Au nanoparticles through ultrafast modulation of the d-band electronic structure. Taken together, these ultrafast studies substantially advance our understanding of the temporal evolution of hot holes in metal-semiconductor heterostructures and suggest new strategies for manipulating and controlling the energy distributions of hot carriers on ultrafast timescales. △ Less

Submitted 9 October, 2018; originally announced October 2018.

Comments: 12 pages, 4 figures

Electron mobility in graphene without invoking the Dirac equation

Authors: Chaitanya K. Ullal, Jian Shi, Ravishankar Sundararaman

Abstract: The Dirac point and linear band structure in Graphene bestow it with remarkable electronic and optical properties, a subject of intense ongoing research. Explanations of high electronic mobility in graphene, often invoke the masslessness of electrons based on the effective relativistic Dirac-equation behavior, which are inaccessible to most undergraduate students and are not intuitive for non-phys… ▽ More The Dirac point and linear band structure in Graphene bestow it with remarkable electronic and optical properties, a subject of intense ongoing research. Explanations of high electronic mobility in graphene, often invoke the masslessness of electrons based on the effective relativistic Dirac-equation behavior, which are inaccessible to most undergraduate students and are not intuitive for non-physics researchers unfamiliar with relativity. Here, we show how to use only basic concepts from semiconductor theory and the linear band structure of graphene to explain its unusual effective mass and mobility, and compare them with conventional metals and semiconductors. We discuss the more intuitive concept of transverse effective mass that emerges naturally from these basic derivations, which approaches zero in the limit of undoped graphene at low temperature and is responsible for its extremely high mobility. △ Less

Submitted 19 January, 2019; v1 submitted 25 June, 2018; originally announced June 2018.

Comments: 5 pages, 3 figures

Journal ref: Am. J. Phys. 87, 291 (2019)

Dynamics and Spin-Valley Locking Effects in Monolayer Transition Metal Dichalcogenides

Authors: Christopher J. Ciccarino, Thomas Christensen, Ravishankar Sundararaman, Prineha Narang

Abstract: Transition metal dichalcogenides have been the primary materials of interest in the field of valleytronics for their potential in information storage, yet the limiting factor has been achieving long valley decoherence times. We explore the dynamics of four monolayer TMDCs (MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$) using ab initio calculations to describe electron-electron and electron-phonon interaction… ▽ More Transition metal dichalcogenides have been the primary materials of interest in the field of valleytronics for their potential in information storage, yet the limiting factor has been achieving long valley decoherence times. We explore the dynamics of four monolayer TMDCs (MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$) using ab initio calculations to describe electron-electron and electron-phonon interactions. By comparing calculations which both omit and include relativistic effects, we isolate the impact of spin-resolved spin-orbit coupling on transport properties. In our work, we find that spin-orbit coupling increases carrier lifetimes at the valence band edge by an order of magnitude due to spin-valley locking, with a proportional increase in the hole mobility at room temperature. At temperatures of 50~K, we find intervalley scattering times on the order of 100 ps, with a maximum value ~140 ps in WSe$_2$. Finally, we calculate excited-carrier generation profiles which indicate that direct transitions dominate across optical energies, even for WSe$_2$ which has an indirect band gap. Our results highlight the intriguing interplay between spin and valley degrees of freedom critical for valleytronic applications. Further, our work points towards interesting quantum properties on-demand in transition metal dichalcogenides that could be leveraged via driving spin, valley and phonon degrees of freedom. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 6 pages, 5 figures

Plasmonics in Argentene

Authors: Ravishankar Sundararaman, Thomas Christensen, Yuan Ping, Nicholas Rivera, John D. Joannopoulos, Marin Soljačić, Prineha Narang

Abstract: Two-dimensional materials exhibit a fascinating range of electronic and photonic properties vital for nanophotonics, quantum optics and emerging quantum information technologies. Merging concepts from the fields of ab initio materials science and nanophotonics, there is now an opportunity to engineer new photonic materials whose optical, transport, and scattering properties are tailored to attain… ▽ More Two-dimensional materials exhibit a fascinating range of electronic and photonic properties vital for nanophotonics, quantum optics and emerging quantum information technologies. Merging concepts from the fields of ab initio materials science and nanophotonics, there is now an opportunity to engineer new photonic materials whose optical, transport, and scattering properties are tailored to attain thermodynamic and quantum limits. Here, we present first-principles calculations predicting that Argentene, a single-crystalline hexagonal close-packed monolayer of Ag, can dramatically surpass the optical properties and electrical conductivity of conventional plasmonic materials. In the low-frequency limit, we show that the scattering rate and resistivity reduce by a factor of three compared to the bulk three-dimensional metal. Most importantly, the low scattering rate extends to optical frequencies in sharp contrast to e.g. graphene, whose scattering rate increase drastically in the near-infrared range due to optical-phonon scattering. Combined with an intrinsically high carrier density, this facilitates highly-confined surface plasmons extending to visible frequencies. We evaluate Argentene across three distinct figures of merit, spanning the spectrum of typical plasmonic applications; in each, Argentene outperforms the state-of-the-art. This unique combination of properties will make Argentene a valuable addition to the two-dimensional heterostructure toolkit for quantum electronic and photonic technologies. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. Materials 4, 074011 (2020)

Lead-Related Quantum Emitters in Diamond

Authors: Matthew E. Trusheim, Noel H. Wan, Kevin C. Chen, Christopher J. Ciccarino, Ravishankar Sundararaman, Girish Malladi, Eric Bersin, Michael Walsh, Benjamin Lienhard, Hassaram Bakhru, Prineha Narang, Dirk Englund

Abstract: We report on quantum emission from Pb-related color centers in diamond following ion implantation and high temperature vacuum annealing. First-principles calculations predict a negatively-charged Pb-vacancy center in a split-vacancy configuration, with a zero-phonon transition around 2.3 eV. Cryogenic photoluminescence measurements performed on emitters in nanofabricated pillars reveal several tra… ▽ More We report on quantum emission from Pb-related color centers in diamond following ion implantation and high temperature vacuum annealing. First-principles calculations predict a negatively-charged Pb-vacancy center in a split-vacancy configuration, with a zero-phonon transition around 2.3 eV. Cryogenic photoluminescence measurements performed on emitters in nanofabricated pillars reveal several transitions, including a prominent doublet near 520 nm. The splitting of this doublet, 2 THz, exceeds that reported for other group-IV centers. These observations are consistent with the PbV center, which is expected to have the combination of narrow optical transitions and stable spin states, making it a promising system for quantum network nodes. △ Less

Submitted 30 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. B 99, 075430 (2019)

Microscopic Origins of Hydrodynamic Transport in Type-II Weyl Semimetal WP$_2$

Authors: Jennifer Coulter, Ravishankar Sundararaman, Prineha Narang

Abstract: The origins of hydrodynamic transport in strongly interacting Dirac and Weyl semimetals have remained elusive in theoretical descriptions and experimental measurements. We investigate the structure and microscopic properties of transport in WP$_2$, a type-II Weyl semimetal, to probe the emergence of hydrodynamic phenomena. We characterize the quantum behavior underlying the hydrodynamic transport… ▽ More The origins of hydrodynamic transport in strongly interacting Dirac and Weyl semimetals have remained elusive in theoretical descriptions and experimental measurements. We investigate the structure and microscopic properties of transport in WP$_2$, a type-II Weyl semimetal, to probe the emergence of hydrodynamic phenomena. We characterize the quantum behavior underlying the hydrodynamic transport regime as a function of temperature through ab initio calculations of the relevant microscopic scattering processes, including electron-phonon, electron-electron, and phonon-mediated electron-electron lifetimes. We present a fundamentally new approach to calculate phonon-drag, a mechanism that is invoked in numerous recent experiments, and remains the subject of active debate in the field. Further, we show unique and unexpected features of the lifetime-resolved Fermi surfaces of WP$_2$ in the hydrodynamic regime and quantify the degree of anisotropy in electron and hole pockets. This description of the microscopic dynamics in hydrodynamic systems like WP$_2$ indicates the importance of electron-phonon interactions in understanding connections between transport in hydrodynamic materials and strongly correlated quantum systems including unconventional metals and high $T_c$ superconductors. △ Less

Submitted 17 April, 2018; originally announced April 2018.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 98, 115130 (2018)

Hot carrier dynamics in plasmonic transition metal nitrides

Authors: Adela Habib, Fred Florio, Ravishankar Sundararaman

Abstract: Extraction of non-equilibrium hot carriers generated by plasmon decay in metallic nanostructures is an increasingly exciting prospect for utilizing plasmonic losses, but the search for optimum plasmonic materials with long-lived carriers is ongoing. Transition metal nitrides are an exciting class of new plasmonic materials with superior thermal and mechanical properties compared to conventional no… ▽ More Extraction of non-equilibrium hot carriers generated by plasmon decay in metallic nanostructures is an increasingly exciting prospect for utilizing plasmonic losses, but the search for optimum plasmonic materials with long-lived carriers is ongoing. Transition metal nitrides are an exciting class of new plasmonic materials with superior thermal and mechanical properties compared to conventional noble metals, but their suitability for plasmonic hot carrier applications remains unknown. Here, we present fully first-principles calculations of the plasmonic response, hot carrier generation and subsequent thermalization of all group IV, V and VI transition metal nitrides, fully accounting for direct and phonon-assisted transitions as well as electron-electron and electron-phonon scattering. We find the largest frequency ranges for plasmonic response in ZrN, HfN and WN, between those of gold and silver, while we predict strongest absorption in the visible spectrum for the VN, NbN and TaN. Hot carrier generation is dominated by direct transitions for most of the relevant energy range in all these nitrides, while phonon-assisted processes dominate only below 1 eV plasmon energies primarily for the group IV nitrides. Finally, we predict the maximum hot carrier lifetimes to be around 10 fs for group IV and VI nitrides, a factor of 3 - 4 smaller than noble metals, due to strong electron-phonon scattering. However, we find longer carrier lifetimes for group V nitrides, comparable to silver for NbN and TaN, while exceeding 100 fs (twice that of silver) for VN, making them promising candidates for efficient hot carrier extraction. △ Less

Submitted 2 May, 2018; v1 submitted 2 February, 2018; originally announced February 2018.

Comments: 9 pages, 7 figures, 2 tables. Supplemental information in source archive (SI.pdf)

Journal ref: J. Opt. 10, 064001 (2018)

Improving Accuracy of Electrochemical Capacitance and Solvation Energetics in First-Principles Calculations

Authors: Ravishankar Sundararaman, Kendra Letchworth-Weaver, Kathleen Schwarz

Abstract: Reliable first-principles calculations of electrochemical processes require accurate prediction of the interfacial capacitance, a challenge for current computationally-efficient continuum solvation methodologies. We develop a model for the double layer of a metallic electrode that reproduces the features of the experimental capacitance of Ag(100) in a non-adsorbing, aqueous electrolyte, including… ▽ More Reliable first-principles calculations of electrochemical processes require accurate prediction of the interfacial capacitance, a challenge for current computationally-efficient continuum solvation methodologies. We develop a model for the double layer of a metallic electrode that reproduces the features of the experimental capacitance of Ag(100) in a non-adsorbing, aqueous electrolyte, including a broad hump in the capacitance near the Potential of Zero Charge (PZC), and a dip in the capacitance under conditions of low ionic strength. Using this model, we identify the necessary characteristics of a solvation model suitable for first-principles electrochemistry of metal surfaces in non-adsorbing, aqueous electrolytes: dielectric and ionic nonlinearity, and a dielectric-only region at the interface. The dielectric nonlinearity, caused by the saturation of dipole rotational response in water, creates the capacitance hump, while ionic nonlinearity, caused by the compactness of the diffuse layer, generates the capacitance dip seen at low ionic strength. We show that none of the previously developed solvation models simultaneously meet all these criteria. We design the Nonlinear Electrochemical Soft-Sphere solvation model (NESS) which both captures the capacitance features observed experimentally, and serves as a general-purpose continuum solvation model. △ Less

Submitted 30 March, 2018; v1 submitted 23 January, 2018; originally announced January 2018.

Comments: 7 pages, 4 figures, 2 tables; supplementary information (SI.pdf) in source archive

Journal ref: J. Chem. Phys. 148, 144105 (2018)

First Principles Free-Energy Theory of Solvation with Atomic Scale Liquid Structure

Authors: Kendra Letchworth-Weaver, Ravishankar Sundararaman, T. A. Arias

Abstract: Quantum-chemical processes in liquid environments impact broad areas of science, from molecular biology to geology to electrochemistry. While density-functional theory (DFT) has enabled efficient quantum-mechanical calculations which profoundly impact understanding of atomic-scale phenomena, realistic description of the liquid remains a challenge. Here, we present an approach based on joint densit… ▽ More Quantum-chemical processes in liquid environments impact broad areas of science, from molecular biology to geology to electrochemistry. While density-functional theory (DFT) has enabled efficient quantum-mechanical calculations which profoundly impact understanding of atomic-scale phenomena, realistic description of the liquid remains a challenge. Here, we present an approach based on joint density-functional theory (JDFT) which addresses this challenge by leveraging the DFT approach not only for the quantum mechanics of the electrons in a solute, but also simultaneously for the statistical mechanics of the molecules in a surrounding equilibrium liquid solvent. Specifically, we develop a new universal description for the interaction of electrons with an arbitrary liquid, providing the missing link to finally transform JDFT into a practical tool for the realistic description of chemical processes in solution. This approach predicts accurate solvation free energies and surrounding atomic-scale liquid structure for molecules and surfaces in multiple solvents without refitting, all at a fraction of the computational cost of methods of comparable detail and accuracy. To demonstrate the potential impact of this method, we determine the structure of the solid/liquid interface, offering compelling agreement with more accurate (but much more computationally intensive) theories and with X-ray reflectivity measurements. △ Less

Submitted 13 October, 2017; originally announced October 2017.

Comments: 15 pages, 4 figures

First-principles Engineering of Charged Defects for Two-dimensional Quantum Technologies

Authors: Feng Wu, Galatas Andrew, Ravishankar Sundararaman, Dario Rocca, Yuan Ping

Abstract: Charged defects in 2D materials have emerging applications in quantum technologies such as quantum emitters and quantum computation. Advancement of these technologies requires rational design of ideal defect centers, demanding reliable computation methods for quantitatively accurate prediction of defect properties. We present an accurate, parameter-free and efficient procedure to evaluate quasipar… ▽ More Charged defects in 2D materials have emerging applications in quantum technologies such as quantum emitters and quantum computation. Advancement of these technologies requires rational design of ideal defect centers, demanding reliable computation methods for quantitatively accurate prediction of defect properties. We present an accurate, parameter-free and efficient procedure to evaluate quasiparticle defect states and thermodynamic charge transition levels of defects in 2D materials. Importantly, we solve critical issues that stem from the strongly anisotropic screening in 2D materials, that have so far precluded accurate prediction of charge transition levels in these materials. Using this procedure, we investigate various defects in monolayer hexagonal boron nitride (h-BN) for their charge transition levels, stable spin states and optical excitations. We identify $C_BN_V$ (nitrogen vacancy adjacent to carbon substitution of boron) to be the most promising defect candidate for scalable quantum bit and emitter applications. △ Less

Submitted 30 September, 2017; originally announced October 2017.

Comments: charged defects, many body perturbation theory, 2D materials

Journal ref: Phys. Rev. Materials 1, 071001 (2017)

Electrochemical Capacitance of CO-terminated Pt(111) is Dominated by CO-Solvent Gap

Authors: Ravishankar Sundararaman, Marta C. Figueiredo, Marc T. M. Koper, Kathleen A. Schwarz

Abstract: The distribution of electric fields within the electrochemical double layer depends on both the electrode and electrolyte in complex ways. These fields strongly influence chemical dynamics in the electrode-electrolyte interface, but cannot be measured directly with sub-molecular resolution. We report experimental capacitance measurements for aqueous interfaces of CO-terminated Pt(111). By comparin… ▽ More The distribution of electric fields within the electrochemical double layer depends on both the electrode and electrolyte in complex ways. These fields strongly influence chemical dynamics in the electrode-electrolyte interface, but cannot be measured directly with sub-molecular resolution. We report experimental capacitance measurements for aqueous interfaces of CO-terminated Pt(111). By comparing these measurements with first-principles density-functional theory (DFT) calculations, we infer microscopic field distributions and decompose contributions to the inverse capacitance from various spatial regions of the interface. We find that the CO is strongly electronically coupled to the Pt, and that most of the interfacial potential difference appears across the gap between the terminating O and water, and not across the CO molecule as previously hypothesized. This `gap capacitance' resulting from hydrophobic termination lowers the overall capacitance of the aqueous Pt-CO interface, and makes it less sensitive to electrolyte concentration compared to the bare metal. △ Less

Submitted 18 October, 2017; v1 submitted 26 September, 2017; originally announced September 2017.

Comments: 5 pages, 3 figures, 2 tables

Journal ref: J. Phys. Chem. Lett., (2017)

JDFTx: software for joint density-functional theory

Authors: Ravishankar Sundararaman, Kendra Letchworth-Weaver, Kathleen A. Schwarz, Deniz Gunceler, Yalcin Ozhabes, T. A. Arias

Abstract: Density-functional theory (DFT) has revolutionized computational prediction of atomic-scale properties from first principles in physics, chemistry and materials science. Continuing development of new methods is necessary for accurate predictions of new classes of materials and properties, and for connecting to nano- and mesoscale properties using coarse-grained theories. JDFTx is a fully-featured… ▽ More Density-functional theory (DFT) has revolutionized computational prediction of atomic-scale properties from first principles in physics, chemistry and materials science. Continuing development of new methods is necessary for accurate predictions of new classes of materials and properties, and for connecting to nano- and mesoscale properties using coarse-grained theories. JDFTx is a fully-featured open-source electronic DFT software designed specifically to facilitate rapid development of new theories, models and algorithms. Using an algebraic formulation as an abstraction layer, compact C++11 code automatically performs well on diverse hardware including GPUs. This code hosts the development of joint density-functional theory (JDFT) that combines electronic DFT with classical DFT and continuum models of liquids for first-principles calculations of solvated and electrochemical systems. In addition, the modular nature of the code makes it easy to extend and interface with, facilitating the development of multi-scale toolkits that connect to ab initio calculations, e.g. photo-excited carrier dynamics combining electron and phonon calculations with electromagnetic simulations. △ Less

Submitted 19 October, 2017; v1 submitted 11 August, 2017; originally announced August 2017.

Comments: 9 pages, 3 figures, 2 code listings

Journal ref: SoftwareX 6, 278 (2017)

Hot Carrier Dynamics in Photoexcited Gold Nanostructures: Role of Interband Excitations and Evidence for Ballistic Transport

Authors: Giulia Tagliabue, Adam S Jermyn, Ravishankar Sundararaman, Alex J Welch, Joseph S DuChene, Artur R Davoyan, Prineha Narang, Harry A Atwater

Abstract: Harnessing short-lived photoexcited electron-hole pairs in metal nanostructures has the potential to define a new phase of optoelectronics, enabling control of athermal mechanisms for light harvesting, photodetection and photocatalysis. To date, however, the spatiotemporal dynamics and transport of these photoexcited carriers have been only qualitatively characterized. Plasmon excitation has been… ▽ More Harnessing short-lived photoexcited electron-hole pairs in metal nanostructures has the potential to define a new phase of optoelectronics, enabling control of athermal mechanisms for light harvesting, photodetection and photocatalysis. To date, however, the spatiotemporal dynamics and transport of these photoexcited carriers have been only qualitatively characterized. Plasmon excitation has been widely viewed as an efficient mechanism for generating non-thermal hot carriers. Despite numerous experiments, conclusive evidence elucidating and quantifying the full dynamics of hot carrier generation, transport, and injection has not been reported. Here, we combine experimental measurements with coupled first-principles electronic structure theory and Boltzmann transport calculations to provide unprecedented insight into the internal quantum efficiency, and hence internal physics, of hot carriers in photoexcited gold (Au)-gallium nitride (GaN) nanostructures. Our results indicate that photoexcited electrons generated in 20 nm-thick Au nanostructures impinge ballistically on the Au-GaN interface. This discovery suggests that the energy of hot carriers could be harnessed from metal nanostructures without substantial losses via thermalization. Measurements and calculations also reveal the important role of metal band structure in hot carrier generation at energies above the interband threshold of the plasmonic nanoantenna. Taken together, our results advance the understanding of excited carrier dynamics in realistically-scaled metallic nanostructures and lay the foundations for the design of new optoelectronic devices that operate in the ballistic regime. △ Less

Submitted 7 August, 2017; originally announced August 2017.

Comments: 9 pages, 4 figures

Transport of hot carriers in plasmonic nanostructures

Authors: Adam S. Jermyn, Giulia Tagliabue, Harry A. Atwater, William A. Goddard III, Prineha Narang, Ravishankar Sundararaman

Abstract: Plasmonic hot carrier devices extract excited carriers from metal nanostructures before equilibration, and have the potential to surpass semiconductor light absorbers. However their efficiencies have so far remained well below theoretical limits, which necessitates quantitative prediction of carrier transport and energy loss in plasmonic structures to identify and overcome bottlenecks in carrier h… ▽ More Plasmonic hot carrier devices extract excited carriers from metal nanostructures before equilibration, and have the potential to surpass semiconductor light absorbers. However their efficiencies have so far remained well below theoretical limits, which necessitates quantitative prediction of carrier transport and energy loss in plasmonic structures to identify and overcome bottlenecks in carrier harvesting. Here, we present a theoretical and computational framework, Non-Equilibrium Scattering in Space and Energy (NESSE), to predict the spatial evolution of carrier energy distributions that combines the best features of phase-space (Boltzmann) and particle-based (Monte Carlo) methods. Within the NESSE framework, we bridge first-principles electronic structure predictions of plasmon decay and carrier collision integrals at the atomic scale, with electromagnetic field simulations at the nano- to mesoscale. Finally, we apply NESSE to predict spatially-resolved energy distributions of photo-excited carriers that impact the surface of experimentally realizable plasmonic nanostructures at length scales ranging from tens to several hundreds of nanometers, enabling first-principles design of hot carrier devices. △ Less

Submitted 19 June, 2019; v1 submitted 21 July, 2017; originally announced July 2017.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. Materials 3, 075201 (2019)

Ultra-light Å-scale Optimal Optical Reflectors

Authors: Georgia T. Papadakis, Prineha Narang, Ravishankar Sundararaman, Nicholas Rivera, Hrvoje Buljan, Nader Engheta, Marin Soljacic

Abstract: High-reflectance in many state-of-the-art optical devices is achieved with noble metals. However, metals are limited by losses, and for certain applications, by their high mass density. Using a combination of ab initio and optical transfer matrix calculations, we evaluate the behavior of graphene-based Å-scale metamaterials and find that they could act as nearly-perfect reflectors in the mid-long… ▽ More High-reflectance in many state-of-the-art optical devices is achieved with noble metals. However, metals are limited by losses, and for certain applications, by their high mass density. Using a combination of ab initio and optical transfer matrix calculations, we evaluate the behavior of graphene-based Å-scale metamaterials and find that they could act as nearly-perfect reflectors in the mid-long wave infrared (IR) range. The low density of states for electron-phonon scattering and interband excitations leads to unprecedented optical properties for graphene heterostructures, especially alternating atomic layers of graphene and hexagonal boron nitride, at wavelengths greater than $10~μ$m. At these wavelengths, these materials exhibit reflectivities exceeding 99.7% at a fraction of the weight of noble metals, as well as plasmonic mode confinement and quality factors that are greater by an order of magnitude compared to noble metals. These findings hold promise for ultra-compact optical components and waveguides for mid-IR applications. Moreover, unlike metals, the photonic properties of these heterostructures could be actively tuned via chemical and/or electrostatic doping, providing exciting possibilities for tunable devices. △ Less

Submitted 20 July, 2017; originally announced July 2017.

Grand canonical electronic density-functional theory: algorithms and applications to electrochemistry

Authors: Ravishankar Sundararaman, William A. Goddard III, Tomas A. Arias

Abstract: First-principles calculations combining density-functional theory and continuum solvation models enable realistic theoretical modeling and design of electrochemical systems. When a reaction proceeds in such systems, the number of electrons in the portion of the system treated quantum mechanically changes continuously, with a balancing charge appearing in the continuum electrolyte. A grand-canonica… ▽ More First-principles calculations combining density-functional theory and continuum solvation models enable realistic theoretical modeling and design of electrochemical systems. When a reaction proceeds in such systems, the number of electrons in the portion of the system treated quantum mechanically changes continuously, with a balancing charge appearing in the continuum electrolyte. A grand-canonical ensemble of electrons at a chemical potential set by the electrode potential is therefore the ideal description of such systems that directly mimics the experimental condition. We present two distinct algorithms, a self-consistent field method (GC-SCF) and a direct variational free energy minimization method using auxiliary Hamiltonians (GC-AuxH), to solve the Kohn-Sham equations of electronic density-functional theory directly in the grand canonical ensemble at fixed potential. Both methods substantially improve performance compared to a sequence of conventional fixed-number calculations targeting the desired potential, with the GC-AuxH method additionally exhibiting reliable and smooth exponential convergence of the grand free energy. Finally, we apply grand-canonical DFT to the under-potential deposition of copper on platinum from chloride-containing electrolytes and show that chloride desorption, not partial copper monolayer formation, is responsible for the second voltammetric peak. △ Less

Submitted 27 February, 2017; v1 submitted 16 January, 2017; originally announced January 2017.

Comments: 15 pages, 12 figures

Journal ref: J. Chem. Phys. 146, 114104 (2017)

Effects of Interlayer Coupling on Hot Carrier Dynamics in Graphene-derived van der Waals Heterostructures

Authors: Prineha Narang, Litao Zhao, Steven Claybrook, Ravishankar Sundararaman

Abstract: Graphene exhibits promise as a plasmonic material with high mode confinement that could enable efficient hot carrier extraction. We investigate the lifetimes and mean free paths of energetic carriers in free-standing graphene, graphite and a heterostructure consisting of alternating graphene and hexagonal boron nitride layers using ab initio calculations of electron-electron and electron-phonon sc… ▽ More Graphene exhibits promise as a plasmonic material with high mode confinement that could enable efficient hot carrier extraction. We investigate the lifetimes and mean free paths of energetic carriers in free-standing graphene, graphite and a heterostructure consisting of alternating graphene and hexagonal boron nitride layers using ab initio calculations of electron-electron and electron-phonon scattering in these materials. We find that the extremely high lifetimes (3 ps) of low-energy carriers near the Dirac point in graphene, which are a hundred times larger than that in noble metals, are reduced by an order of magnitude due to inter-layer coupling in graphite, but enhanced in the heterostructure due to phonon mode clamping. However, these lifetimes drop precipitously with increasing carrier energy, and are smaller than those in noble metals at energies exceeding 0.5 eV. By analysing the contribution of different scattering mechanisms and inter-layer interactions, we identify desirable spacer layer characteristics - high dielectric constant and heavy atoms - that could pave the way for plasmonic heterostructures with improved hot carrier transport. △ Less

Submitted 24 December, 2016; originally announced December 2016.

First-principles electrostatic potentials for reliable alignment at interfaces and defects

Authors: Ravishankar Sundararaman, Yuan Ping

Abstract: Alignment of electrostatic potential between different atomic configurations is necessary for first-principles calculations of band offsets across interfaces and formation energies of charged defects. However, strong oscillations of this potential at the atomic scale make alignment challenging, especially when atomic geometries change considerably from bulk to the vicinity of defects and interface… ▽ More Alignment of electrostatic potential between different atomic configurations is necessary for first-principles calculations of band offsets across interfaces and formation energies of charged defects. However, strong oscillations of this potential at the atomic scale make alignment challenging, especially when atomic geometries change considerably from bulk to the vicinity of defects and interfaces. We introduce a method to suppress these strong oscillations by eliminating the deep wells in the potential at each atom. We demonstrate that this method considerably improves the system-size convergence of a wide range of first-principles predictions that depend on alignment of electrostatic potentials, including band offsets at solid-liquid interfaces, and formation energies of charged vacancies in solids and at solid surfaces in vacuum. Finally, we use this method in conjunction with continuum solvation theories to investigate energetics of charged vacancies at solid-liquid interfaces. We find that for the example of an NaCl (001) surface in water, solvation reduces the formation energy of charged vacancies by 0.5 eV: calculation of this important effect was previously impractical due to computational cost in molecular-dynamics methods. △ Less

Submitted 27 February, 2017; v1 submitted 6 December, 2016; originally announced December 2016.

Journal ref: J. Chem. Phys. 146, 104109 (2017)

Evaluating continuum solvation models for the electrode-electrolyte interface: challenges and strategies for improvement

Authors: Ravishankar Sundararaman, Kathleen Schwarz

Abstract: Ab initio modeling of electrochemical systems is becoming a key tool for understanding and predicting electrochemical behavior. Development and careful benchmarking of computational electrochemical methods are essential to ensure their accuracy. Here, using charging curves for an electrode in the presence of an inert aqueous electrolyte, we demonstrate that most continuum models, which are paramet… ▽ More Ab initio modeling of electrochemical systems is becoming a key tool for understanding and predicting electrochemical behavior. Development and careful benchmarking of computational electrochemical methods are essential to ensure their accuracy. Here, using charging curves for an electrode in the presence of an inert aqueous electrolyte, we demonstrate that most continuum models, which are parameterized and benchmarked for molecules, anions, and cations in solution, undersolvate metal surfaces, and underestimate the surface charge as a function of applied potential. We examine features of the electrolyte and interface that are captured by these models, and identify improvements necessary for realistic electrochemical calculations of metal surfaces. Finally, we reparameterize popular solvation models using the surface charge of Ag(100) as a function of voltage to find improved accuracy for metal surfaces without significant change in utility for molecular and ionic solvation. △ Less

Submitted 27 February, 2017; v1 submitted 3 December, 2016; originally announced December 2016.

Journal ref: J. Chem. Phys. 146, 084111 (2017)

Experimental and ab initio ultrafast carrier dynamics in plasmonic nanoparticles

Authors: Ana M. Brown, Ravishankar Sundararaman, Prineha Narang, Adam M. Schwartzberg, William A. Goddard III, Harry A. Atwater

Abstract: Ultrafast pump-probe measurements of plasmonic nanostructures probe the non-equilibrium behavior of excited carriers, which involves several competing effects obscured in typical empirical analyses. Here we present pump-probe measurements of plasmonic nanoparticles along with a complete theoretical description based on first-principles calculations of carrier dynamics and optical response, free of… ▽ More Ultrafast pump-probe measurements of plasmonic nanostructures probe the non-equilibrium behavior of excited carriers, which involves several competing effects obscured in typical empirical analyses. Here we present pump-probe measurements of plasmonic nanoparticles along with a complete theoretical description based on first-principles calculations of carrier dynamics and optical response, free of any fitting parameters. We account for detailed electronic-structure effects in the density of states, excited carrier distributions, electron-phonon coupling, and dielectric functions which allow us to avoid effective electron temperature approximations. Using this calculation method, we obtain excellent quantitative agreement with spectral and temporal features in transient-absorption measurements. In both our experiments and calculations, we identify the two major contributions of the initial response with distinct signatures: short-lived highly non-thermal excited carriers and longer-lived thermalizing carriers. △ Less

Submitted 24 December, 2016; v1 submitted 10 August, 2016; originally announced August 2016.

Comments: Supplementary information available as SI.pdf in source

Journal ref: Phys. Rev. Lett. 118, 087401 (2017)

Plasmonic Hot Electron Transport Driven Site-Specific Surface-Chemistry with Nanoscale Spatial Resolution

Authors: Emiliano Cortés, Wei Xie, Javier Cambiasso, Adam S. Jermyn, Ravishankar Sundararaman, Prineha Narang, Sebastian Schlücker, Stefan A. Maier

Abstract: Nanoscale localization of electromagnetic fields near metallic nanostructures underpins the fundamentals and applications of plasmonics. The unavoidable energy loss from plasmon decay, initially seen as a detriment, has now expanded the scope of plasmonic applications to exploit the generated hot carriers. However, quantitative understanding of the spatial localization of these hot carriers, akin… ▽ More Nanoscale localization of electromagnetic fields near metallic nanostructures underpins the fundamentals and applications of plasmonics. The unavoidable energy loss from plasmon decay, initially seen as a detriment, has now expanded the scope of plasmonic applications to exploit the generated hot carriers. However, quantitative understanding of the spatial localization of these hot carriers, akin to electromagnetic near-field maps, has been elusive. Here we spatially map hot-electron-driven reduction chemistry with 15 nanometre resolution as a function of time and electromagnetic field polarization for different plasmonic nanostructures. We combine experiments employing a six-electron photo-recycling process that modify the terminal group of a self-assembled monolayer on plasmonic silver nanoantennas, with theoretical predictions from first-principles calculations of non-equilibrium hot-carrier transport in these systems. The resulting localization of reactive regions, determined by hot carrier transport from high-field regions, paves the way for hot-carrier extraction science and nanoscale regio-selective surface chemistry. △ Less

Submitted 19 July, 2016; originally announced July 2016.

Comments: 18 pages, 5 figures