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On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact
Authors:
Jules Duraz,
Hassen Souissi,
Maksym Gromovyi,
David Troadec,
Teo Baptiste,
Nathaniel Findling,
Phuong Vuong,
Rajat Gujrati,
Thi May Tran,
Jean Paul Salvestrini,
Maria Tchernycheva,
Suresh Sundaram,
Abdallah Ougazzaden,
Gilles Patriarche,
Sophie Bouchoule
Abstract:
The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-assisted, Ni diffusion to the top surface of the metallic contact through the formation of a nickel oxide…
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The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-assisted, Ni diffusion to the top surface of the metallic contact through the formation of a nickel oxide (NiOx) is accompanied by Au diffusion down to the GaN surface, and by Ga out-diffusion through the GaN/metal interface. Electrical characterizations of the contact by Transmission Line Method (TLM) show that an ohmic contact is obtained as soon as a thin, Au-Ga interfacial layer is formed, even after complete diffusion of Ni or NiOx to the top surface of the contact. Our results clarify that the presence of Ni or NiOx at the interface is not the main origin of the ohmic-like behavior in such contacts. Auto-cleaning of the interface during the interdiffusion process may play a role, but TEM-EDX analysis evidences that the creation of Ga vacancies associated to the formation of a Ga-Au interfacial layer is crucial for reducing the Schottky barrier height, and maximizing the amount of current flowing through the contact.
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Submitted 10 February, 2025; v1 submitted 16 December, 2024;
originally announced December 2024.
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High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
Authors:
Vishnu Ottapilakkal,
Abhishek Juyal,
Suresh Sundaram,
Phuong Vuong,
Collin Beck,
Noel L. Dudeck,
Amira Bencherif,
Annick Loiseau,
Frédéric Fossard,
Jean-Sebastien Mérot,
David Chapron,
Thomas H. Kauffmann,
Jean-Paul Salvestrini,
Paul L. Voss,
Walt A. de Heer,
Claire Berger,
Abdallah Ougazzaden
Abstract:
Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-organic vapor phase epitaxy (MOVPE) grows epitaxially ordered, uniform BN layers on epigraphene (graphene grown on SiC). Due to graphene non-wetting properties, h-BN growth starts preferentially from the graphene ledges.…
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Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-organic vapor phase epitaxy (MOVPE) grows epitaxially ordered, uniform BN layers on epigraphene (graphene grown on SiC). Due to graphene non-wetting properties, h-BN growth starts preferentially from the graphene ledges. We use this fact here to selectively promote growth of high-quality flat h-BN on epigraphene by patterning epigraphene microstructures prior to BN growth. Thin h-BN films (down to 6 nm) grown by MOVPE show smooth and pleated surface morphology on epigraphene, while crumpled BN is observed on the SiC. Cross-sectional high-resolution transmission electron microscopy images and fluorescence imaging confirm the higher BN quality grown on the epigraphene. Transport measurements reveal p-doping as expected from hydrogen intercalation of epigraphene and regions of high and low mobility. This method can be used to produce structurally uniform high-quality h-BN/epigraphene micro/nano scale heterostructure.
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Submitted 7 September, 2024;
originally announced September 2024.
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Duality between the quantum inverted harmonic oscillator and inverse square potentials
Authors:
Sriram Sundaram,
C. P. Burgess,
D. H. J. O'Dell
Abstract:
In this paper we show how the quantum mechanics of the inverted harmonic oscillator can be mapped to the quantum mechanics of a particle in a super-critical inverse square potential. We demonstrate this by relating both of these systems to the Berry-Keating system with hamiltonian $H=(xp+px)/2$. It has long been appreciated that the quantum mechanics of the inverse square potential has an ambiguit…
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In this paper we show how the quantum mechanics of the inverted harmonic oscillator can be mapped to the quantum mechanics of a particle in a super-critical inverse square potential. We demonstrate this by relating both of these systems to the Berry-Keating system with hamiltonian $H=(xp+px)/2$. It has long been appreciated that the quantum mechanics of the inverse square potential has an ambiguity in choosing a boundary condition near the origin and we show how this ambiguity is mapped to the inverted harmonic oscillator system. Imposing a boundary condition requires specifying a distance scale where it is applied and changes to this scale come with a renormalization group (RG) evolution of the boundary condition that ensures observables do not directly depend on the scale (which is arbitrary). Physical scales instead emerge as RG invariants of this evolution. The RG flow for the inverse square potential is known to follow limit cycles describing the discrete breaking of classical scale invariance in a simple example of a quantum anomaly, and we find that limit cycles also occur for the inverted harmonic oscillator. However, unlike the inverse square potential where the continuous scaling symmetry is explicit, in the case of the inverted harmonic oscillator it is hidden and occurs because the hamiltonian is part of a larger su(1,1) spectrum generating algebra. Our map does not require the boundary condition to be self-adjoint, as can be appropriate for systems that involve the absorption or emission of particles.
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Submitted 21 February, 2024;
originally announced February 2024.
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Plasma-enhanced atomic layer deposition of Al$_2$O$_3$ on graphene using monolayer hBN as interfacial layer
Authors:
Barbara Canto,
Martin Otto,
Michael J. Powell,
Vitaliy Babenko,
Aileen O Mahony,
Harm Knoops,
Ravi S. Sundaram,
Stephan Hofmann,
Max C. Lemme,
Daniel Neumaier
Abstract:
The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphe…
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The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage was observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene did not degrade during the plasma deposition of Al$_2$O$_3$. The leakage current densities were consistently below 1 nA/mm for electric fields across the insulators of up to 8 MV/cm, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al$_2$O$_3$ and can be seen as an indicator for high quality dielectric films.
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Submitted 24 August, 2022;
originally announced August 2022.
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Fall-to-the-centre as a $\mathcal{PT}$ symmetry breaking transition
Authors:
Sriram Sundaram,
C. P. Burgess,
D. H. J. O'Dell
Abstract:
The attractive inverse square potential arises in a number of physical problems such as a dipole interacting with a charged wire, the Efimov effect, the Calgero-Sutherland model, near-horizon black hole physics and the optics of Maxwell fisheye lenses. Proper formulation of the inverse-square problem requires specification of a boundary condition (regulator) at the origin representing short-range…
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The attractive inverse square potential arises in a number of physical problems such as a dipole interacting with a charged wire, the Efimov effect, the Calgero-Sutherland model, near-horizon black hole physics and the optics of Maxwell fisheye lenses. Proper formulation of the inverse-square problem requires specification of a boundary condition (regulator) at the origin representing short-range physics not included in the inverse square potential and this generically breaks the Hamiltonian's continuous scale invariance in an elementary example of a quantum anomaly. The system's spectrum qualitatively changes at a critical value of the inverse-square coupling, and we here point out that the transition at this critical potential strength can be regarded as an example of a $\mathcal{PT}$ symmetry breaking transition. In particular, we use point particle effective field theory (PPEFT), as developed by Burgess et al [J. High Energy Phys., 2017(4):106, 2017], to characterize the renormalization group (RG) evolution of the boundary coupling under rescalings. While many studies choose boundary conditions to ensure the system is unitary, these RG methods allow us to systematically handle the richer case of nonunitary physics describing a source or sink at the origin (such as is appropriate for the charged wire or black hole applications). From this point of view the RG flow changes character at the critical inverse-square coupling, transitioning from a sub-critical regime with evolution between two real, unitary fixed points ($\mathcal{PT}$ symmetric phase) to a super-critical regime with imaginary, dissipative fixed points ($\mathcal{PT}$ symmetry broken phase) that represent perfect-sink and perfect-source boundary conditions, around which the flow executes limit-cycle evolution.
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Submitted 3 July, 2021;
originally announced July 2021.
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Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition
Authors:
James Gigliotti,
Xin Li,
Suresh Sundaram,
Dogukan Deniz,
Vladimir Prudkovskiy,
Jean-Philippe Turmaud,
Yiran Hu,
Yue Hu,
Frédéric Fossard,
Jean-Sébastien Mérot,
Annick Loiseau,
Gilles Patriarche,
Bokwon Yoon,
Uzi Landman,
Abdallah Ougazzaden,
Claire Berger,
Walt A. de Heer
Abstract:
Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow Van der Waals semiconductors on top of EG nanostructures. Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor with a honeycomb lattice structure that matches that of graphe…
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Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow Van der Waals semiconductors on top of EG nanostructures. Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor with a honeycomb lattice structure that matches that of graphene, making it ideally suited for graphene-based nanoelectronics. Here, we describe the preparation and characterization of multilayer h-BN grown epitaxially on EG using a migration-enhanced metalorganic vapor phase epitaxy process. As a result of the lateral epitaxial deposition (LED) mechanism, the grown h-BN/EG heterostructures have highly ordered epitaxial interfaces, as desired in order to preserve the transport properties of pristine graphene. Atomic scale structural and energetic details of the observed row-by-row, growth mechanism of the 2D epitaxial h-BN film are analyzed through first-principles simulations, demonstrating one-dimensional nucleation-free-energy-barrierless growth. This industrially relevant LED process can be applied to a wide variety of van der Waals materials.
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Submitted 22 November, 2020;
originally announced November 2020.
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Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics
Authors:
Renaud Puybaret,
Gilles Patriarche,
Matthew B. Jordan,
Suresh Sundaram,
Youssef El Gmili,
Jean-Paul Salvestrini,
Paul L. Voss,
Walt A. de Heer,
Claire Berger,
Abdallah Ougazzaden
Abstract:
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective crystals in the heteroepitaxial growth of nitrides, and the high mobility graphene film can readily provide the back low-dissipative electrode in GaN-…
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We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective crystals in the heteroepitaxial growth of nitrides, and the high mobility graphene film can readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. The process consists in first growing a 5-8 graphene layers film on the C-face of 4H- SiC by confinement-controlled sublimation of silicon carbide. The graphene film is then patterned and arrays of 75-nanometer-wide openings are etched in graphene revealing the SiC substrate. 30-nanometer-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in openings patterned through graphene, with no nucleation on graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal hexagonal wurtzite. The GaN crystalline nanomesas have no threading dislocations, and do not show any V-pit. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene / silicon carbide platform.
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Submitted 15 October, 2015;
originally announced October 2015.
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Ultrafast and widely tuneable vertical-external-cavity surface-emitting laser, mode-locked by a graphene-integrated distributed Bragg reflector
Authors:
C. A. Zaugg,
Z. Sun,
V. J. Wittwer,
D. Popa,
S. Milana,
T. Kulmala,
R. S. Sundaram,
M. Mangold,
O. D. Sieber,
M. Golling,
Y. Lee,
J. H. Ahn,
A. C. Ferrari,
U. Keller
Abstract:
We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected ligh…
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We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected light at the mirror. The unsaturated loss of the SLG-mirror-assembly can be reduced to$\sim$0. We use this to mode-lock a VECSEL from 935 to 981nm. This approach can be applied to integrate SLG into various optical components, such as output coupler mirrors, dispersive mirrors, dielectric coatings on gain materials. Conversely, it can also be used to increase absorption (up to 10%) in various graphene based photonics and optoelectronics devices, such as photodetectors.
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Submitted 8 October, 2013;
originally announced October 2013.
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Controlling Sub-nm Gaps in Plasmonic Dimers using Graphene
Authors:
Jan Mertens,
Anna L. Eiden,
Daniel O. Sigle,
Antonio Lombardo,
Zhipei Sun,
Ravi S. Sundaram,
Alan Colli,
Christos Tserkezis,
Javier Aizpurua,
Silvia Milana,
Andrea C. Ferrari,
Jeremy J. Baumberg
Abstract:
Graphene is used as the thinnest possible spacer between gold nanoparticles and a gold substrate. This creates a robust, repeatable, and stable sub-nanometre gap for massive plasmonic field enhancements. White light spectroscopy of single 80 nm gold nanoparticles reveals plasmonic coupling between the particle and its image within the gold substrate. While for a single graphene layer, spectral dou…
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Graphene is used as the thinnest possible spacer between gold nanoparticles and a gold substrate. This creates a robust, repeatable, and stable sub-nanometre gap for massive plasmonic field enhancements. White light spectroscopy of single 80 nm gold nanoparticles reveals plasmonic coupling between the particle and its image within the gold substrate. While for a single graphene layer, spectral doublets from coupled dimer modes are observed shifted into the near infra-red, these disappear for increasing numbers of layers. These doublets arise from plasmonic charge transfer, allowing the direct optical measurement of out-of-plane conductivity in such layered systems. Gating the graphene can thus directly produce plasmon tuning.
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Submitted 23 May, 2013;
originally announced May 2013.
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Electroluminescence in Single Layer MoS2
Authors:
R. S. Sundaram,
M. Engel,
A. Lombardo,
R. Krupke,
A. C. Ferrari,
Ph. Avouris,
M. Steiner
Abstract:
We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results sh…
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We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.
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Submitted 19 November, 2012;
originally announced November 2012.
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2μm Solid-State Laser Mode-locked By Single-Layer Graphene
Authors:
A. A. Lagatsky,
Z. Sun,
T. S. Kulmala,
R. S. Sundaram,
S. Milana,
F. Torrisi,
O. L. Antipov,
Y. Lee,
J. H. Ahn,
C. T. A. Brown,
W. Sibbett,
A. C. Ferrari
Abstract:
We report a 2μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequency of 110MHz. This is a convenient high-power transform-limited laser at 2μm for various applications, such as laser surgery and material processing.
We report a 2μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequency of 110MHz. This is a convenient high-power transform-limited laser at 2μm for various applications, such as laser surgery and material processing.
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Submitted 25 October, 2012;
originally announced October 2012.
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Surface effects on nanowire transport: numerical investigation using the Boltzmann equation
Authors:
Venkat S. Sundaram,
Ari Mizel
Abstract:
A direct numerical solution of the steady-state Boltzmann equation in a cylindrical geometry is reported. Finite-size effects are investigated in large semiconducting nanowires using the relaxation-time approximation. A nanowire is modelled as a combination of an interior with local transport parameters identical to those in the bulk, and a finite surface region across whose width the carrier de…
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A direct numerical solution of the steady-state Boltzmann equation in a cylindrical geometry is reported. Finite-size effects are investigated in large semiconducting nanowires using the relaxation-time approximation. A nanowire is modelled as a combination of an interior with local transport parameters identical to those in the bulk, and a finite surface region across whose width the carrier density decays radially to zero. The roughness of the surface is incorporated by using lower relaxation-times there than in the interior.
An argument supported by our numerical results challenges a commonly used zero-width parametrization of the surface layer. In the non-degenerate limit, appropriate for moderately doped semiconductors, a finite surface width model does produce a positive longitudinal magneto-conductance, in agreement with existing theory. However, the effect is seen to be quite small (a few per cent) for realistic values of the wire parameters even at the highest practical magnetic fields. Physical insights emerging from the results are discussed.
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Submitted 9 December, 2003;
originally announced December 2003.
