Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
Authors:
C. Cerqueira,
J. Y. Qin,
H. Dang,
A. Djeffal,
J. -C. Le Breton,
M. Hehn,
J. -C. Rojas-Sanchez,
X. Devaux,
S. Suire,
S. Migot,
P. Schieffer,
J. -G. Mussot,
P. Laczkowski,
A. Anane,
S. Petit-Watelot,
M. Stoffel,
S. Mangin,
Z. Liu,
B. W. Cheng,
X. F. Han,
H. Jaffrès,
J. -M. George,
Y. Lu
Abstract:
Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in…
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Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2μm in n-type Si at room temperature. In those experiments, a pure propagating spin-current is generated via ferromagnetic resonance spin-pumping and converted into a measurable voltage by using the inverse spin-Hall effect occurring in the top Pt layer. A systematic study by varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO/Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO/Si interface states appears to be a prerequisite to establish the necessary out-of-equilibrium spin-population in Si under the spin-pumping action.
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Submitted 10 February, 2019;
originally announced February 2019.
Fe/MgO/Fe (100) textured tunnel junctions exhibiting spin polarization features of single crystal junctions
Authors:
A. Duluard,
B. Negulescu,
C. Bellouard,
M. Hehn,
D. Lacour,
Y. Lu,
G. Lengaigne,
F. Montaigne,
S. Robert,
S. Suire,
C. Tiusan
Abstract:
Crystallographic and spin polarized transport properties of (100) textured and (100) epitaxial Fe/MgO/Fe magnetic tunnel junctions are compared. Strong similarities in the transport properties show that structural coherence and magnetic quality at the 25 nm grain scale in textured junctions are sufficient to issue signatures of the spin polarized transport specific to a single crystal junction. Th…
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Crystallographic and spin polarized transport properties of (100) textured and (100) epitaxial Fe/MgO/Fe magnetic tunnel junctions are compared. Strong similarities in the transport properties show that structural coherence and magnetic quality at the 25 nm grain scale in textured junctions are sufficient to issue signatures of the spin polarized transport specific to a single crystal junction. This demonstrates that the lateral coherence of the Bloch tunneling wave function is identically limited in both systems. Our analysis leads to model the textured tunnel junction as a juxtaposition of nanometer sized single crystal junctions, placed in parallel.
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Submitted 4 December, 2012; v1 submitted 28 November, 2011;
originally announced November 2011.
