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Giant Rashba splitting in PtTe/PtTe$_2$ heterostructure
Authors:
Runfa Feng,
Yang Zhang,
Jiaheng Li,
Qian Li,
Changhua Bao,
Hongyun Zhang,
Wanying Chen,
Xiao Tang,
Ken Yaegashi,
Katsuaki Sugawara,
Takafumi Sato,
Wenhui Duan,
Pu Yu,
Shuyun Zhou
Abstract:
Achieving a large spin splitting is highly desirable for spintronic devices, which often requires breaking of the inversion symmetry. However, many atomically thin films are centrosymmetric, making them unsuitable for spintronic applications. Here, we report a strategy to achieve inversion symmetry breaking from a centrosymmetric transition metal dichalcogenide (TMDC) bilayer PtTe$_2$, leading to…
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Achieving a large spin splitting is highly desirable for spintronic devices, which often requires breaking of the inversion symmetry. However, many atomically thin films are centrosymmetric, making them unsuitable for spintronic applications. Here, we report a strategy to achieve inversion symmetry breaking from a centrosymmetric transition metal dichalcogenide (TMDC) bilayer PtTe$_2$, leading to a giant Rashba spin splitting. Specifically, the thermal annealing turns one layer of PtTe$_2$ sample into a transition metal monochalcogenide (TMMC) PtTe through Te extraction, thus forming PtTe/PtTe$_2$ heterostructure with inversion symmetry breaking. In the naturally-formed PtTe/PtTe$_2$ heterostructure, we observe a giant Rashba spin splitting with Rashba coefficient of $α_{R}$ = 1.8 eV$\cdot$$Å$, as revealed by spin- and angle-resolved photoemission spectroscopy measurements. Our work demonstrates a convenient and effective pathway for achieving pronounced Rashba splitting in centrosymmetric TMDC thin films by creating TMMC/TMDC heterostructure, thereby extending their potential applications to spintronics.
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Submitted 8 April, 2025;
originally announced April 2025.
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Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T'-WTe2
Authors:
Ryuichi Ando,
Katsuaki Sugawara,
Tappei Kawakami,
Koki Yanagizawa,
Ken Yaegashi,
Takashi Takahashi,
Takafumi Sato
Abstract:
The ground state of monolayer 1T'-WTe2 has been a target of intensive debate on whether or not it is a two-dimensional topological insulator (2D TI) associated with exciton formation. We investigated the band structure of an epitaxial monolayer 1T'-WTe2 film grown on graphene/SiC(0001) in a wide temperature range of T = 40 - 400 K by angle-resolved photoemission spectroscopy (ARPES). We observed a…
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The ground state of monolayer 1T'-WTe2 has been a target of intensive debate on whether or not it is a two-dimensional topological insulator (2D TI) associated with exciton formation. We investigated the band structure of an epitaxial monolayer 1T'-WTe2 film grown on graphene/SiC(0001) in a wide temperature range of T = 40 - 400 K by angle-resolved photoemission spectroscopy (ARPES). We observed an electron band above the Fermi level (EF) slightly away from the Γ point, together with four hole bands below EF just at the Γ point. This signifies an indirect band gap exceeding 0.1 eV in support of the 2D-TI phase with the inverted band structure. We uncovered an unexpectedly large downward shift of valence bands upon cooling, accompanied with an upward shift of the conduction band. Comparison of the ARPES-derived band structure with first-principles band calculations suggests that the observed band shift is ascribed to the systematic local atomic distortion of tungsten atoms, which should be incorporated into the interpretation of unusual transport properties of 1T'-WTe2.
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Submitted 29 January, 2025;
originally announced January 2025.
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Selective Fabrication of Monolayer 1H- and 1T'-WTe2
Authors:
Ryuichi Ando,
Katsuaki Sugawara,
Tappei Kawakami,
Takashi Takahashi,
Takafumi Sato
Abstract:
We selectively fabricated monolayers of octahedral (1H) and distorted trigonal (1T') WTe2 on graphene/SiC(0001) by controlling the substrate temperature during epitaxy. Angle-resolved photoemission spectroscopy, combined with first-principles band-structure calculations, has revealed several drastic differences between these two polymorphs. The 1T' phase exhibits a semiconducting character with a…
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We selectively fabricated monolayers of octahedral (1H) and distorted trigonal (1T') WTe2 on graphene/SiC(0001) by controlling the substrate temperature during epitaxy. Angle-resolved photoemission spectroscopy, combined with first-principles band-structure calculations, has revealed several drastic differences between these two polymorphs. The 1T' phase exhibits a semiconducting character with a nearly-zero energy gap, while the 1H phase shows a large band gap and the band splitting at the K/K' point. The present results pave a pathway toward developing nanoelectronic devices based with WTe2.
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Submitted 29 January, 2025;
originally announced January 2025.
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In-situ topotactic chemical reaction for spectroscopies
Authors:
Tappei Kawakami,
Kosuke Nakayama,
Katsuaki Sugawara,
Takafumi Sato
Abstract:
Topotactic chemical reaction (TCR) is a chemical process that transforms one crystalline phase to another while maintaining one or more of the original structural frameworks, typically induced by the local insertion, removal, or replacement of atoms in a crystal. The utilization of TCR in atomic-layer materials and surfaces of bulk crystals leads to exotic quantum phases, as highlighted by the con…
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Topotactic chemical reaction (TCR) is a chemical process that transforms one crystalline phase to another while maintaining one or more of the original structural frameworks, typically induced by the local insertion, removal, or replacement of atoms in a crystal. The utilization of TCR in atomic-layer materials and surfaces of bulk crystals leads to exotic quantum phases, as highlighted by the control of topological phases, the emergence of two-dimensional (2D) superconductivity, and the realization of 2D ferromagnetism. Advanced surface-sensitive spectroscopies such as angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) are leading techniques to visualize the electronic structure of such exotic states and provide us a guide to further functionalize material properties. In this review article, we summarize the recent progress in this field, with particular emphasis on intriguing results obtained by combining spectroscopies and TCR in thin films.
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Submitted 2 July, 2024;
originally announced July 2024.
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Antiferromagnetic topological insulator with selectively gapped Dirac cones
Authors:
A. Honma,
D. Takane,
S. Souma,
K. Yamauchi,
Y. Wang,
K. Nakayama,
K. Sugawara,
M. Kitamura,
K. Horiba,
H. Kumigashira,
K. Tanaka,
T. K. Kim,
C. Cacho,
T. Oguchi,
T. Takahashi,
Yoichi Ando,
T. Sato
Abstract:
Antiferromagnetic (AF) topological materials offer a fertile ground to explore a variety of quantum phenomena such as axion magnetoelectric dynamics and chiral Majorana fermions. To realize such intriguing states, it is essential to establish a direct link between electronic states and topology in the AF phase, whereas this has been challenging because of the lack of a suitable materials platform.…
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Antiferromagnetic (AF) topological materials offer a fertile ground to explore a variety of quantum phenomena such as axion magnetoelectric dynamics and chiral Majorana fermions. To realize such intriguing states, it is essential to establish a direct link between electronic states and topology in the AF phase, whereas this has been challenging because of the lack of a suitable materials platform. Here we report the experimental realization of the AF topological-insulator phase in NdBi. By using micro-focused angle-resolved photoemission spectroscopy, we discovered contrasting surface electronic states for two types of AF domains; the surface having the out-of-plane component in the AF-ordering vector displays Dirac-cone states with a gigantic energy gap, whereas the surface parallel to the AF-ordering vector hosts gapless Dirac states despite the time-reversal-symmetry breaking. The present results establish an essential role of combined symmetry to protect massless Dirac fermions under the presence of AF order and widen opportunities to realize exotic phenomena utilizing AF topological materials.
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Submitted 20 November, 2023;
originally announced November 2023.
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180$^\circ$-twisted bilayer ReSe$_2$ as an artificial noncentrosymmetric semiconductor
Authors:
S. Akatsuka,
M. Sakano,
T. Yamamoto,
T. Nomoto,
R. Arita,
R. Murata,
T. Sasagawa,
K. Watanabe,
T. Taniguchi,
M. Kitamura,
K. Horiba,
K. Sugawara,
S. Souma,
T. Sato,
H. Kumigashira,
K. Shinokita,
H. Wang,
K. Matsuda,
S. Masubuchi,
T. Machida,
K. Ishizaka
Abstract:
We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the fi…
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We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the finite lifting of spin degeneracy (~50 meV) distinct from natural monolayer and bilayer ReSe$_2$. Our results demonstrate that the spin-momentum locked state, which leads to spintronic functions and Berry-curvature-related phenomena, can be realized even with the stacking of centrosymmetric monolayers.
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Submitted 27 September, 2023;
originally announced September 2023.
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Charge order with unusual star-of-David lattice in monolayer NbTe2
Authors:
Taiki Taguchi,
Katsuaki Sugawara,
Hirofumi Oka,
Tappei Kawakami,
Yasuaki Saruta,
Takemi Kato,
Kosuke Nakayama,
Seigo Souma,
Takashi Takahashi,
Tomoteru Fukumura,
Takafumi Sato
Abstract:
Interplay between fermiology and electron correlation is crucial for realizing exotic quantum phases. Transition-metal dichalcogenide (TMD) 1T-TaS2 has sparked a tremendous attention owing to its unique Mott-insulating phase coexisting with the charge-density wave (CDW). However, how the fermiology and electron correlation are associated with such properties has yet to be claried. Here we demonstr…
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Interplay between fermiology and electron correlation is crucial for realizing exotic quantum phases. Transition-metal dichalcogenide (TMD) 1T-TaS2 has sparked a tremendous attention owing to its unique Mott-insulating phase coexisting with the charge-density wave (CDW). However, how the fermiology and electron correlation are associated with such properties has yet to be claried. Here we demonstrate that monolayer 1T-NbTe2 is a new class of two-dimensional TMD which has the star-of-David lattice similarly to bulk TaS2 and isostructural monolayer NbSe2, but exhibits a metallic ground state with an unusual lattice periodicity root19xroot19 characterized by the sparsely occupied star-of-David lattice. By using angle-resolved photoemission and scanning-tunneling spectroscopies in combination with first-principles band-structure calculations, we found that the hidden Fermi-surface nesting and associated CDW formation are a primary cause to realize this unique correlated metallic state with no signature of Mott gap. The present result points to a vital role of underlying fermiology to characterize the Mott phase of TMDs.
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Submitted 24 December, 2022;
originally announced December 2022.
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Rhombic Fermi surfaces in a ferromagnetic MnGa thin film with perpendicular magnetic anisotropy
Authors:
M. Kobayashi,
N. H. D. Khang,
T. Takeda,
K. Araki,
R. Okano,
M. Suzuki,
K. Kuroda,
K. Yaji,
K. Sugawara,
S. Souma,
K. Nakayama,
K. Yamauchi,
M. Kitamura,
K. Horiba,
A. Fujimori,
T. Sato,
S. Shin,
M. Tanaka,
P. N. Hai
Abstract:
Mn$_{1-x}$Ga$_x$ (MnGa) with the $L1_0$ structure is a ferromagnetic material with strong perpendicular magneto-crystalline anisotropy. Although MnGa thin films have been successfully grown epitaxially and studied for various spintronics devices, fundamental understandings of its electronic structure are still lacking. To address this issue, we have investigated $L1_0$-MnGa thin films using angle-…
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Mn$_{1-x}$Ga$_x$ (MnGa) with the $L1_0$ structure is a ferromagnetic material with strong perpendicular magneto-crystalline anisotropy. Although MnGa thin films have been successfully grown epitaxially and studied for various spintronics devices, fundamental understandings of its electronic structure are still lacking. To address this issue, we have investigated $L1_0$-MnGa thin films using angle-resolved photoemission spectroscopy (ARPES). We have observed a large Fermi surface with a rhombic shape in the $k_x$-$k_y$ plane overlapping neighboring Fermi surfaces. The $k_z$ dependence of the band structure suggests that the band dispersion observed by ARPES comes from the three-dimensional band structure of MnGa folded by a $\sqrt{2} \times \sqrt{2}$ reconstruction. The band dispersion across the corner of the rhombic Fermi surface forms an electron pocket with a weak $k_z$ dependence. The effective mass and the mobility of the bands crossing the Fermi level near the corner are estimated from the ARPES images. Based on the experimental findings, the relationship between the observed band structure and the spin-dependent properties in MnGa-based heterostructures is discussed.
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Submitted 22 March, 2022;
originally announced March 2022.
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Development of a versatile micro-focused angle-resolved photoemission spectroscopy system with Kirkpatrick-Baez mirror optics
Authors:
Miho Kitamura,
Seigo Souma,
Asuka Honma,
Daisuke Wakabayashi,
Hirokazu Tanaka,
Akio Toyoshima,
Kenta Amemiya,
Tappei Kawakami,
Katsuaki Sugawara,
Kosuke Nakayama,
Kohei Yoshimatsu,
Hiroshi Kumigashira,
Takafumi Sato,
Koji Horiba
Abstract:
Angle-resolved photoemission spectroscopy using a micro-focused beam spot (micro-ARPES) is becoming a powerful tool to elucidate key electronic states of exotic quantum materials. We have developed a versatile micro-ARPES system based on synchrotron radiation beam focused with a Kirkpatrick-Baez mirror optics. The mirrors are monolithically installed on a stage, which is driven with five-axes moti…
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Angle-resolved photoemission spectroscopy using a micro-focused beam spot (micro-ARPES) is becoming a powerful tool to elucidate key electronic states of exotic quantum materials. We have developed a versatile micro-ARPES system based on synchrotron radiation beam focused with a Kirkpatrick-Baez mirror optics. The mirrors are monolithically installed on a stage, which is driven with five-axes motion, and are vibrationally separated from the ARPES measurement system. Spatial mapping of the Auphotolithography pattern on Si signifies the beam spot size of 10 $μ$m (horizontal) x 12 $μ$m (vertical) at the sample position, which is well suited to resolve the fine structure in local electronic states. Utilization of the micro beam and the high precision sample motion system enables the accurate spatially resolved band-structure mapping, as demonstrated by the observation of a small band anomaly associated with tiny sample bending near the edge of a cleaved topological insulator single crystal.
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Submitted 14 March, 2022;
originally announced March 2022.
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Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe2 and 1T-NbSe2
Authors:
Yuki Nakata,
Katsuaki Sugawara,
Ashish Chainani,
Hirofumi Oka,
Changhua Bao,
Shaohua Zhou,
Pei-Yu Chuang,
Cheng-Maw Cheng,
Tappei Kawakami,
Yasuaki Saruta,
Tomoteru Fukumura,
Shuyun Zhou,
Takashi Takahashi,
Takafumi Sato
Abstract:
Combination of low-dimensionality and electron correlation is vital for exotic quantum phenomena such as the Mott-insulating phase and high-temperature superconductivity. Transition-metal dichalcogenide (TMD) 1T-TaS2 has evoked great interest owing to its unique nonmagnetic Mott-insulator nature coupled with a charge-density-wave (CDW). To functionalize such a complex phase, it is essential to enh…
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Combination of low-dimensionality and electron correlation is vital for exotic quantum phenomena such as the Mott-insulating phase and high-temperature superconductivity. Transition-metal dichalcogenide (TMD) 1T-TaS2 has evoked great interest owing to its unique nonmagnetic Mott-insulator nature coupled with a charge-density-wave (CDW). To functionalize such a complex phase, it is essential to enhance the CDW-Mott transition temperature TCDW-Mott, whereas this was difficult for bulk TMDs with TCDW-Mott < 200 K. Here we report a strong-coupling 2D CDW-Mott phase with a transition temperature onset of ~530 K in monolayer 1T-TaSe2. Furthermore, the electron correlation derived lower Hubbard band survives under external perturbations such as carrier doping and photoexcitation, in contrast to the bulk counterpart. The enhanced Mott-Hubbard and CDW gaps for monolayer TaSe2 compared to NbSe2, originating in the lattice distortion assisted by strengthened correlations and disappearance of interlayer hopping, suggest stabilization of a likely nonmagnetic CDW-Mott insulator phase well above the room temperature. The present result lays the foundation for realizing monolayer CDW-Mott insulator based devices operating at room temperature.
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Submitted 8 October, 2021;
originally announced October 2021.
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Electronic states of multilayer VTe2: quasi-one-dimensional Fermi surface and implications to charge-density waves
Authors:
T. Kawakami,
K. Sugawara,
T. Kato,
T. Taguchi,
S. Souma,
T. Takahashi,
T. Sato
Abstract:
We have performed angle-resolved photoemission spectroscopy on epitaxial VTe2 films to elucidate the relationship between the fermiology and charge-density waves (CDW). We found that a two-dimensional triangular pocket in 1 monolayer (ML) VTe2 is converted to a strongly warped quasi-one-dimensional (1D) Fermi surface in the 6ML counterpart, likely associated with the 1T-to-1T' structural phase tra…
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We have performed angle-resolved photoemission spectroscopy on epitaxial VTe2 films to elucidate the relationship between the fermiology and charge-density waves (CDW). We found that a two-dimensional triangular pocket in 1 monolayer (ML) VTe2 is converted to a strongly warped quasi-one-dimensional (1D) Fermi surface in the 6ML counterpart, likely associated with the 1T-to-1T' structural phase transition. We also revealed a metallic Fermi edge on the entire Fermi surface in 6ML at low temperature distinct from anisotropic pseudogap in 1ML, signifying a contrast behavior of CDW that is also supported by first-principles band-structure caluculations. The present result points to the importance of simultaneously controlling the structural phase and fermiology to manipulate the CDW properties in ultrathin transition-metal dichalcogenides.
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Submitted 8 July, 2021;
originally announced July 2021.
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Dirac Fermion kinetics in three-dimensionally curved graphene
Authors:
Yoichi Tanabe,
Yoshikazu Ito,
Katsuaki Sugawara,
Mikito Koshino,
Shojiro Kimura,
Tomoya Naito,
Isaac Johnson,
Takashi Takahashi,
Mingwei Chen
Abstract:
Three dimensionally curved graphene with a wide range of curvature radii from 25 nm to 1000 nm demonstrates that nano-scale curvature is a new degree of freedom to tune the transport properties of graphene by manipulating 2D electron kinetics on 3D curved surfaces.
Three dimensionally curved graphene with a wide range of curvature radii from 25 nm to 1000 nm demonstrates that nano-scale curvature is a new degree of freedom to tune the transport properties of graphene by manipulating 2D electron kinetics on 3D curved surfaces.
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Submitted 9 October, 2020; v1 submitted 7 October, 2020;
originally announced October 2020.
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Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van-der-Waals ferromagnet Cr2Si2Te6
Authors:
Takemi Kato,
Katsuaki Sugawara,
Naohiro Ito,
Kunihiko Yamauchi,
Takumi Sato,
Tamio Oguchi,
Takashi Takahashi,
Yuki Shiomi,
Eiji Saitoh,
Takafumi Sato
Abstract:
We investigated the Dirac-cone state and its modulation when an ultrathin film of topological insulator Bi2Se3 was epitaxially grown on a van-der-Waals ferromagnet Cr2Si2Te6 (CST) by angle-resolved photoemission spectroscopy. We observed a gapless Dirac-cone surface state in 6 quintuple-layer (QL) Bi2Se3 on CST, whereas the Dirac cone exhibits a gap of 0.37 eV in 2QL counterpart. Intriguingly, thi…
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We investigated the Dirac-cone state and its modulation when an ultrathin film of topological insulator Bi2Se3 was epitaxially grown on a van-der-Waals ferromagnet Cr2Si2Te6 (CST) by angle-resolved photoemission spectroscopy. We observed a gapless Dirac-cone surface state in 6 quintuple-layer (QL) Bi2Se3 on CST, whereas the Dirac cone exhibits a gap of 0.37 eV in 2QL counterpart. Intriguingly, this gap is much larger than those for Bi2Se3 films on Si(111). We also revealed no discernible change in the gap magnitude across the ferromagnetic transition of CST, suggesting the very small characteristic length and energy scale of the magnetic proximity effect. The present results suggest a crucial role of interfacial coupling for modulating Dirac electrons in topological-insulator hybrids.
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Submitted 18 August, 2020;
originally announced August 2020.
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Unusual temperature evolution of band structure of Bi(111) studied by angle-resolved photoemission spectroscopy and density functional theory
Authors:
Takafumi Sato,
Keiko Yamada,
Takao Kosaka,
Seigo Souma,
Kunihiko Yamauchi,
Katsuaki Sugawara,
Tamio Oguchi,
Takashi Takahashi
Abstract:
We have performed angle-resolved photoemission spectroscopy of Bi(111) thin films grown on Si(111), and investigated the evolution of band structure with temperature. We revealed an unexpectedly large temperature variation of the energy dispersion for the Rashba-split surface state and the quantum-well states, as seen in the highly momentum-dependent energy shift as large as 0.1 eV. A comparison o…
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We have performed angle-resolved photoemission spectroscopy of Bi(111) thin films grown on Si(111), and investigated the evolution of band structure with temperature. We revealed an unexpectedly large temperature variation of the energy dispersion for the Rashba-split surface state and the quantum-well states, as seen in the highly momentum-dependent energy shift as large as 0.1 eV. A comparison of the band dispersion between experiment and first-principles band-structure calculations suggests that the interlayer spacing at the topmost Bi bilayer expands upon temperature increase. The present study provides a new pathway for investigating the interplay between lattice and electronic states through the temperature dependence of band structure.
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Submitted 16 August, 2020;
originally announced August 2020.
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Conversion of a conventional superconductor into a topological superconductor by topological proximity effect
Authors:
C. X. Trang,
N. Shimamura,
K. Nakayama,
S. Souma,
K. Sugawara,
I. Watanabe,
K. Yamauchi,
T. Oguchi,
K. Segawa,
T. Takahashi,
Yoichi Ando,
T. Sato
Abstract:
Realization of topological superconductors (TSCs) hosting Majorana fermions is a central challenge in condensed-matter physics. One approach is to use the superconducting proximity effect (SPE) in heterostructures, where a topological insulator contacted with a superconductor hosts an effective p-wave pairing by the penetration of Cooper pairs across the interface. However, this approach suffers a…
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Realization of topological superconductors (TSCs) hosting Majorana fermions is a central challenge in condensed-matter physics. One approach is to use the superconducting proximity effect (SPE) in heterostructures, where a topological insulator contacted with a superconductor hosts an effective p-wave pairing by the penetration of Cooper pairs across the interface. However, this approach suffers a difficulty in accessing the topological interface buried deep beneath the surface. Here, we propose an alternative approach to realize topological superconductivity without SPE. In a Pb(111) thin film grown on TlBiSe2, we discover that the Dirac-cone state of substrate TlBiSe2 migrates to the top surface of Pb film and obtains an energy gap below the superconducting transition temperature of Pb. This suggests that a BCS superconductor is converted into a TSC by the topological proximity effect. Our discovery opens a route to manipulate topological superconducting properties of materials.
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Submitted 10 March, 2020;
originally announced March 2020.
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Dichotomy of superconductivity between monolayer FeS and FeSe
Authors:
Koshin Shigekawa,
Kosuke Nakayama,
Masato Kuno,
Giao N. Phan,
Kenta Owada,
Katsuaki Sugawara,
Takashi Takahashi,
Takafumi Sato
Abstract:
The discovery of high-temperature (Tc) superconductivity in monolayer FeSe on SrTiO3 raised a fundamental question whether high Tc is commonly realized in monolayer iron-based superconductors. Tetragonal FeS is a key material to resolve this issue because bulk FeS is a superconductor with Tc comparable to that of isostructural FeSe. However, difficulty in synthesizing tetragonal monolayer FeS due…
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The discovery of high-temperature (Tc) superconductivity in monolayer FeSe on SrTiO3 raised a fundamental question whether high Tc is commonly realized in monolayer iron-based superconductors. Tetragonal FeS is a key material to resolve this issue because bulk FeS is a superconductor with Tc comparable to that of isostructural FeSe. However, difficulty in synthesizing tetragonal monolayer FeS due to its metastable nature has hindered further investigations. Here we report elucidation of band structure of monolayer FeS on SrTiO3, enabled by a unique combination of in-situ topotactic reaction and molecular-beam epitaxy. Our angle-resolved photoemission spectroscopy on FeS and FeSe revealed marked similarities in the electronic structure, such as heavy electron doping and interfacial electron-phonon coupling, both of which have been regarded as possible sources of high Tc in FeSe. However, surprisingly, high-Tc superconductivity is absent in monolayer FeS. This is linked to the weak superconducting pairing in electron-doped multilayer FeS in which the interfacial effects are absent. Our results strongly suggest that the cross-interface electron-phonon coupling enhances Tc only when it cooperates with the pairing interaction inherent to the superconducting layer. This finding provides a key insight to explore new heterointerface high-Tc superconductors.
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Submitted 9 December, 2019;
originally announced December 2019.
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Anomalous Hall effect at the spontaneously electron-doped polar surface of PdCoO2 ultrathin films
Authors:
T. Harada,
K. Sugawara,
K. Fujiwara,
S. Ito,
T. Nojima,
T. Takahashi,
T. Sato,
A. Tsukazaki
Abstract:
We revealed the electrical transport through surface ferromagnetic states of a nonmagnetic metal PdCoO2. Electronic reconstruction at the Pd-terminated surface of PdCoO2 induces Stoner-like ferromagnetic states, which could lead to spin-related phenomena among the highly conducting electrons in PdCoO2. Fabricating a series of nanometer-thick PdCoO2 thin films, we detected a surface-magnetization-d…
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We revealed the electrical transport through surface ferromagnetic states of a nonmagnetic metal PdCoO2. Electronic reconstruction at the Pd-terminated surface of PdCoO2 induces Stoner-like ferromagnetic states, which could lead to spin-related phenomena among the highly conducting electrons in PdCoO2. Fabricating a series of nanometer-thick PdCoO2 thin films, we detected a surface-magnetization-driven anomalous Hall effect via systematic thickness- and termination-dependent measurements. Besides, we discuss that finite magnetic moments in electron doped CoO2 triangular lattices may have given rise to additional unconventional Hall resistance.
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Submitted 21 August, 2019;
originally announced August 2019.
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Dimensionality reduction and band quantization induced by potassium intercalation in 1$T$-HfTe$_2$
Authors:
Y. Nakata,
K. Sugawara,
A. Chainani,
K. Yamauchi,
K. Nakayama,
S. Souma,
P. -Y. Chuang,
C. -M. Cheng,
T. Oguchi,
K. Ueno,
T. Takahashi,
T. Sato
Abstract:
We have performed angle-resolved photoemission spectroscopy on transition-metal dichalcogenide 1$T$-HfTe$_2$ to elucidate the evolution of electronic states upon potassium (K) deposition. In pristine HfTe$_2$, an in-plane hole pocket and electron pockets are observed at the Brillouin-zone center and corner, respectively, indicating the semimetallic nature of bulk HfTe$_2$, with dispersion perpendi…
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We have performed angle-resolved photoemission spectroscopy on transition-metal dichalcogenide 1$T$-HfTe$_2$ to elucidate the evolution of electronic states upon potassium (K) deposition. In pristine HfTe$_2$, an in-plane hole pocket and electron pockets are observed at the Brillouin-zone center and corner, respectively, indicating the semimetallic nature of bulk HfTe$_2$, with dispersion perpendicular to the plane. In contrast, the band structure of heavily K-dosed HfTe$_2$ is obviously different from that of bulk, and resembles the band structure calculated for monolayer HfTe$_2$. It was also observed that lightly K-dosed HfTe$_2$ is characterized by quantized bands originating from bilayer and trilayer HfTe$_2$, indicative of staging. The results suggest that the dimensionality-crossover from 3D (dimensional) to 2D electronic states due to systematic K intercalation takes place via staging in a single sample. The study provides a new strategy for controlling the dimensionality and functionality of novel quantum materials.
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Submitted 10 July, 2019;
originally announced July 2019.
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Monolayer VTe2: Incommensurate Fermi surface nesting and suppression of charge density waves
Authors:
Katsuaki Sugawara,
Yuki Nakata,
Kazuki Fujii,
Kosuke Nakayama,
Seigo Souma,
Takashi Takahashi,
Takafumi Sato
Abstract:
We investigated the electronic structure of monolayer VTe2 grown on bilayer graphene by angle-resolved photoemission spectroscopy (ARPES). We found that monolayer VTe2 takes the octahedral 1T structure in contrast to the monoclinic one in the bulk, as evidenced by the good agreement in the Fermi-surface topology between ARPES results and first-principles band calculations for octahedral monolayer…
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We investigated the electronic structure of monolayer VTe2 grown on bilayer graphene by angle-resolved photoemission spectroscopy (ARPES). We found that monolayer VTe2 takes the octahedral 1T structure in contrast to the monoclinic one in the bulk, as evidenced by the good agreement in the Fermi-surface topology between ARPES results and first-principles band calculations for octahedral monolayer 1T-VTe2. We have revealed that monolayer 1T-VTe2 at low temperature is characterized by a metallic state whereas the nesting condition is better than that of isostructural monolayer VSe2 which undergoes a CDW transition to insulator at low temperature. The present result suggests an importance of Fermi-surface topology for characterizing the CDW properties of monolayer TMDs.
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Submitted 18 June, 2019;
originally announced June 2019.
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Electronic structure of Bi2Te3/FeTe heterostructure: implications for unconventional superconductivity
Authors:
Kenta Owada,
Kosuke Nakayama,
Ryuji Tsubono,
Koshin Shigekawa,
Katsuaki Sugawara,
Takashi Takahashi,
Takafumi Sato
Abstract:
We have performed angle-resolved photoemission spectroscopy on a heterostructure consisting of topological insulator Bi2Te3 and iron chalcogenide FeTe fabricated on SrTiO3 substrate by molecular-beam-epitaxy technique. This system was recently found to show superconductivity albeit non-superconducting nature of each constituent material. Upon interfacing FeTe with two quintuple layers of Bi2Te3, w…
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We have performed angle-resolved photoemission spectroscopy on a heterostructure consisting of topological insulator Bi2Te3 and iron chalcogenide FeTe fabricated on SrTiO3 substrate by molecular-beam-epitaxy technique. This system was recently found to show superconductivity albeit non-superconducting nature of each constituent material. Upon interfacing FeTe with two quintuple layers of Bi2Te3, we found that the Dirac-cone surface state of Bi2Te3 is shifted toward higher binding energy, while the holelike band at the Fermi level originating from FeTe moves toward lower binding energy. This suggests that electron charge transfer takes place from FeTe to Bi2Te3 through the interface. The present result points to importance of hole-doped FeTe interface for the occurrence of unconventional superconductivity.
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Submitted 14 May, 2019;
originally announced May 2019.
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Effect of Cu intercalation and pressure on excitonic interaction in 1T-TiSe2
Authors:
Shunsuke Kitou,
Akitoshi Nakano,
Shintaro Kobayashi,
Kento Sugawara,
Naoyuki Katayama,
Naoyuki Maejima,
Akihiko Machida,
Tetsu Watanuki,
Koichi Ichimura,
Satoshi Tanda,
Toshikazu Nakamura,
Hiroshi Sawa
Abstract:
1T-TiSe2 has a semimetallic band structure at room temperature and undergoes phase transition to a triple-q charge density wave (CDW) state with a commensurate superlattice structure (2a * 2a * 2c) below Tc ~ 200 K at ambient pressure. This phase transition is caused by cooperative phenomena involving electron-phonon and electron-hole (excitonic) interactions, and cannot be described by a standard…
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1T-TiSe2 has a semimetallic band structure at room temperature and undergoes phase transition to a triple-q charge density wave (CDW) state with a commensurate superlattice structure (2a * 2a * 2c) below Tc ~ 200 K at ambient pressure. This phase transition is caused by cooperative phenomena involving electron-phonon and electron-hole (excitonic) interactions, and cannot be described by a standard CDW framework. By Cu intercalation or the application of pressure, this phase transition temperature is suppressed and superconductivity (SC) appears. However, it is not clear what kind of order parameters are affected by these two procedures. We investigated the crystal structure of CuxTiSe2 and pressurized 1T-TiSe2 around the SC state by synchrotron x-ray diffraction on single crystals. In the high-temperature phase, the variation of structural parameters for the case of Cu intercalation and application of pressure are considerably different. Moreover, the relationship between the critical points of the CDW phase transition and the SC dome are also different for the two cases. The excitonic interaction appears to play an important role in the P-T phase diagram of 1T-TiSe2, but not in the x-T phase diagram.
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Submitted 28 March, 2019; v1 submitted 6 February, 2019;
originally announced February 2019.
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Pseudogap, Fermi arc, and Peierls-insulating phase induced by 3D-2D crossover in monolayer VSe2
Authors:
Yuki Umemoto,
Katsuaki Sugawara,
Yuki Nakata,
Takashi Takahashi,
Takafumi Sato
Abstract:
One of important challenges in condensed-matter physics is to realize new quantum states of matter by manipulating the dimensionality of materials, as represented by the discovery of high-temperature superconductivity in atomic-layer pnictides and room-temperature quantum Hall effect in graphene. Transition-metal dichalcogenides (TMDs) provide a fertile platform for exploring novel quantum phenome…
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One of important challenges in condensed-matter physics is to realize new quantum states of matter by manipulating the dimensionality of materials, as represented by the discovery of high-temperature superconductivity in atomic-layer pnictides and room-temperature quantum Hall effect in graphene. Transition-metal dichalcogenides (TMDs) provide a fertile platform for exploring novel quantum phenomena accompanied by the dimensionality change, since they exhibit a variety of electronic/magnetic states owing to quantum confinement. Here we report an anomalous metal-insulator transition induced by 3D-2D crossover in monolayer 1T-VSe2 grown on bilayer graphene. We observed a complete insulating state with a finite energy gap on the entire Fermi surface in monolayer 1T-VSe2 at low temperatures, in sharp contrast to metallic nature of bulk. More surprisingly, monolayer 1T-VSe2 exhibits a pseudogap with Fermi arc at temperatures above the charge-density-wave temperature, showing a close resemblance to high-temperature cuprates. This similarity suggests a common underlying physics between two apparently different systems, pointing to the importance of charge/spin fluctuations to create the novel electronic states, such as pseudogap and Fermi arc, in these materials.
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Submitted 4 October, 2018;
originally announced October 2018.
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Three-dimensional porous graphene networks expand graphene-based electronic device applications
Authors:
Yoshikazu Ito,
Yoichi Tanabe,
Katsuaki Sugawara,
Mikito Koshino,
Takashi Takahashi,
Katsumi Tanigaki,
Hideo Aokig,
Mingwei Chen
Abstract:
Graphene with excellent 2D characters has been required to expand their potentials for meeting applicational demands in recent years. As one avenue, several approaches for fablicating 3D porous graphene network structures have been developed to realize multi-functional graphene materials with 2D graphene. Here we overview characteristics of 3D porous graphene for future electronic device applicati…
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Graphene with excellent 2D characters has been required to expand their potentials for meeting applicational demands in recent years. As one avenue, several approaches for fablicating 3D porous graphene network structures have been developed to realize multi-functional graphene materials with 2D graphene. Here we overview characteristics of 3D porous graphene for future electronic device applications along with physical insights into "2D to 3D graphene", where the characters of 2D graphene such as massless Dirac fermions are well preserved. The present review thus summarizes recent 3D porous graphene studies with a perspective for providing new and board graphene electronic device applications.
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Submitted 19 December, 2017;
originally announced January 2018.
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Effects of strain on the electronic structure, superconductivity, and nematicity in FeSe studied by angle-resolved photoemission spectroscopy
Authors:
G. N. Phan,
K. Nakayama,
K. Sugawara,
T. Sato,
T. Urata,
Y. Tanabe,
K. Tanigaki,
F. Nabeshima,
Y. Imai,
A. Maeda,
T. Takahashi
Abstract:
One of central issues in iron-based superconductors is the role of structural change to the superconducting transition temperature (T_c). It was found in FeSe that the lattice strain leads to a drastic increase in T_c, accompanied by suppression of nematic order. By angle-resolved photoemission spectroscopy on tensile- or compressive-strained and strain-free FeSe, we experimentally show that the i…
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One of central issues in iron-based superconductors is the role of structural change to the superconducting transition temperature (T_c). It was found in FeSe that the lattice strain leads to a drastic increase in T_c, accompanied by suppression of nematic order. By angle-resolved photoemission spectroscopy on tensile- or compressive-strained and strain-free FeSe, we experimentally show that the in-plane strain causes a marked change in the energy overlap (DeltaE_{h-e}) between the hole and electron pockets in the normal state. The change in DeltaE_{h-e} modifies the Fermi-surface volume, leading to a change in T_c. Furthermore, the strength of nematicity is also found to be characterized by DeltaE_{h-e}. These results suggest that the key to understanding the phase diagram is the fermiology and interactions linked to the semimetallic band overlap.
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Submitted 15 June, 2017;
originally announced June 2017.
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Various arsenic network structures in 112-type Ca1-xLaxFe1-yPdyAs2 revealed by synchrotron x-ray diffraction experiments
Authors:
Shinya Tamura,
Naoyuki Katayama,
Yuto Yamada,
Yuki Sugiyama,
Kento Sugawara,
Hiroshi Sawa
Abstract:
Two novel 112-type palladium doped iron arsenides were synthesized and identified using comprehensive studies involving synchrotron x-ray diffraction and x-ray absorption near edge structure (XANES) experiments. Whereas in-plane arsenic zigzag chains were found in 112-type superconducting iron arsenide, Ca1-xLaxFeAs2 with maximum Tc = 34 K, deformed arsenic network structures appeared in 112-type…
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Two novel 112-type palladium doped iron arsenides were synthesized and identified using comprehensive studies involving synchrotron x-ray diffraction and x-ray absorption near edge structure (XANES) experiments. Whereas in-plane arsenic zigzag chains were found in 112-type superconducting iron arsenide, Ca1-xLaxFeAs2 with maximum Tc = 34 K, deformed arsenic network structures appeared in 112-type materials such as longitudinal arsenics zigzag chains in CaFe1-yPdyAs2 (y ~ 0.51) and arsenic square sheets constructed via hypervalent bonding in Ca1-xLaxFe1-yPdyAs2 (x ~ 0.31, y ~ 0.30). As K-edge XANES spectra clarified the similar oxidization states around FeAs4 tetrahedrons, expecting us the possible parents for high Tc 112-type iron arsenide superconductors.
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Submitted 12 March, 2017;
originally announced March 2017.
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Band splitting and Weyl nodes in trigonal tellurium studied by angle-resolved photoemission spectroscopy and density functional theory
Authors:
K. Nakayama,
M. Kuno,
K. Yamauchi,
S. Souma,
K. Sugawara,
T. Oguchi,
T. Sato,
T. Takahashi
Abstract:
We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) on trigonal tellurium consisting of helical chains in the crystal. Through the band-structure mapping in the three-dimensional Brillouin zone, we found a definitive evidence for the band splitting originating from the chiral nature of crystal. A direct comparison of the band dispersion between the ARPES results and…
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We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) on trigonal tellurium consisting of helical chains in the crystal. Through the band-structure mapping in the three-dimensional Brillouin zone, we found a definitive evidence for the band splitting originating from the chiral nature of crystal. A direct comparison of the band dispersion between the ARPES results and the first-principles band-structure calculations suggests the presence of Weyl nodes and tiny spin-polarized hole pockets around the H point. The present result opens a pathway toward studying the interplay among crystal symmetry, band structure, and exotic physical properties in chiral crystals.
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Submitted 29 March, 2017; v1 submitted 3 March, 2017;
originally announced March 2017.
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Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks
Authors:
Yoichi Tanabe,
Yoshikazu Ito,
Katsuaki Sugawara,
Daisuke Hojo,
Mikito Koshino,
Takeshi Fujita,
Tsutomu Aida,
Xiandong Xu,
Khuong Kim Huynh,
Hidekazu Shimotani,
Tadafumi Adschiri,
Takashi Takahashi,
Katsumi Tanigaki,
Hideo Aoki,
Mingwei Chen
Abstract:
Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of m…
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Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of massless Dirac fermions cannot be well preserved in these materials for transistor applications. Here we report a high-performance graphene transistor by utilizing 3D nanoporous graphene which is comprised of an interconnected single graphene sheet and a commodious open porosity to infuse an ionic liquid for a tunable electronic state by applying electric fields. The 3D nanoporous graphene transistor, with high carrier mobility of 5000-7500 cm$^2$V$^{-1}$s$^{-1}$, exhibits two to three orders of magnitude higher electric conductance and capacitance than those of 2D graphene devices, along with preserved ambipolor electronic nature of Dirac cones. Moreover, the 3D graphene networks with Dirac fermions turn out to exhibit a unique nonlinear Hall resistance in a wide range of the gate voltages. The high quality 3D nanoporous graphene EDLT may open a new field for utilizing Dirac fermions in 3D network structures for various fundamental and practical applications.
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Submitted 17 December, 2016;
originally announced December 2016.
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Effect of pressure on magneto-transport properties in the superconducting and normal phases of the metallic double chain compound Pr$_{2}$Ba$_{4}$Cu$_{7}$O$_{15-δ}$
Authors:
Masayoshi Kuwabara,
Michiaki Matsukawa,
Keisuke Sugawara,
Haruka Taniguchi
Abstract:
To examine the electronic phase diagram of superconducting CuO double chains, we report the effect of external pressure on the magneto-transport properties in superconducting and non-superconducting polycrystalline samples of Pr$_{2}$Ba$_{4}$Cu$_{7}$O$_{15-δ}$ at low temperatures (1.8-40 K) under various magnetic fields (up to 14 T). In the as-sintered non-superconducting sample, the magneto-resis…
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To examine the electronic phase diagram of superconducting CuO double chains, we report the effect of external pressure on the magneto-transport properties in superconducting and non-superconducting polycrystalline samples of Pr$_{2}$Ba$_{4}$Cu$_{7}$O$_{15-δ}$ at low temperatures (1.8-40 K) under various magnetic fields (up to 14 T). In the as-sintered non-superconducting sample, the magneto-resistance (MR) follows a power law of $H^{3/2}$ at low temperatures, which is in no agreement with the $H^{2}$ dependence of MR in the PrBa$_{2}$Cu$_{4}$O$_{8}$ system. The negative pressure dependence of the superconducting phase is qualitatively consistent with a theoretical prediction on the basis of the Tomonaga-Luttinger Liquid theory. The 48-h-reduced superconducting sample at ambient pressure exhibits no clear increase in MR for $T > T_{c,on}=26.5$ K. In contrast, with the application of pressure to the superconducting sample, the MR effects reappear and are also well fitted by $H^{3/2}$. The model of slightly warped Fermi surfaces explains not only the MR effect of the non-superconducting sample, but is also related to the reasons for the pressure-induced MR phenomena of the superconducting sample.
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Submitted 1 September, 2016;
originally announced September 2016.
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Tunable two-dimensional electron gas at the surface of thermoelectric material In$_4$Se$_3$
Authors:
K. Fukutani,
T. Sato,
P. V. Galiy,
K. Sugawara,
T. Takahashi
Abstract:
We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In$_4$Se$_3$ by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m* = 0.16 m_0, and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor t…
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We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In$_4$Se$_3$ by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m* = 0.16 m_0, and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor transition at the surface. The observed wide-range thermal tunability of 2DEG in In$_4$Se$_3$ gives rise to additional degrees of freedom to better control the surface carriers of semiconductors.
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Submitted 1 June, 2016;
originally announced June 2016.
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A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities
Authors:
Akira Satou,
Gen Tamamushi,
Kenta Sugawara,
Junki Mitsushio,
Victor Ryzhii,
Taiichi Otsuji
Abstract:
A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device p…
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A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can be extracted. We apply it to a top-gated G-FET with a graphene channel grown on a SiC substrate and with SiN gate dielectric that we reported previously, and we demonstrate that it can excellently fit its asymmetric I-V characteristic.
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Submitted 29 February, 2016;
originally announced March 2016.
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Thermodynamic Properties of Superconducting and Non-Superconducting Pr$_{2}$Ba$_{4}$Cu$_{7}$O$_{15-δ}$ Compounds with Metallic Double Chains
Authors:
Takahisa Konno,
Michiaki Matsukawa,
Keisuke Sugawara,
Haruka Taniguchi
Abstract:
To examine the thermodynamic properties of Pr$_{2}$Ba$_{4}$Cu$_{7}$O$_{15-δ}$ compounds with metallic CuO double chains, we measured the specific heats of superconducting and non-superconducting polycrystalline samples at low temperatures (1.8-40 K) under various magnetic fields (up to 9 T). In the as-sintered non-superconducting sample, a $λ-$like enhancement in the specific heat measurement appe…
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To examine the thermodynamic properties of Pr$_{2}$Ba$_{4}$Cu$_{7}$O$_{15-δ}$ compounds with metallic CuO double chains, we measured the specific heats of superconducting and non-superconducting polycrystalline samples at low temperatures (1.8-40 K) under various magnetic fields (up to 9 T). In the as-sintered non-superconducting sample, a $λ-$like enhancement in the specific heat measurement appeared near the antiferromagnetic transition temperature $T_{N}=17$ K. In contrast, the reduced superconducting sample with $T_{c,on}=26.5$ K exhibited no obvious superconducting anomaly in its specific data, but a Schottky-like broad maximum appeared at low temperatures. The Schottky-like anomaly was attributed to low-lying quasi-triplet splitting of Pr$^{3+}$ ions under the crystal field effect.
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Submitted 3 December, 2015;
originally announced December 2015.
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Direct Observation of Superconductivity in Calcium-Intercalated Bilayer Graphene by in situ Electrical Transport Measurements
Authors:
S. Ichinokura,
K. Sugawara,
A. Takayama,
T. Takahashi,
S. Hasegawa
Abstract:
We report the superconductivity in Ca-intercalated bilayer graphene C$_6$CaC$_6$, the thinnest limit of Ca graphite intercalation compound. We performed \textit{in situ} electrical transport measurements on pristine bilayer graphene, C$_6$LiC$_6$ and C$_6$CaC$_6$ fabricated on SiC substrate under zero and non-zero magnetic field. While both bilayer graphene and C$_6$LiC$_6$ show non-superconductin…
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We report the superconductivity in Ca-intercalated bilayer graphene C$_6$CaC$_6$, the thinnest limit of Ca graphite intercalation compound. We performed \textit{in situ} electrical transport measurements on pristine bilayer graphene, C$_6$LiC$_6$ and C$_6$CaC$_6$ fabricated on SiC substrate under zero and non-zero magnetic field. While both bilayer graphene and C$_6$LiC$_6$ show non-superconducting behavior, C$_6$CaC$_6$ exhibits the superconductivity with transition temperature ($T_{\rm c}$) of 4.0 K. The observed $T_{\rm c}$ in C$_6$CaC$_6$ and the absence of superconductivity in C$_6$LiC$_6$ show a good agreement with the theoretical prediction, suggesting the importance of a free-electron-like metallic band at the Fermi level to drive the superconductivity.
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Submitted 27 August, 2015;
originally announced August 2015.
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Spin- and valley- coupled electronic states in monolayer WSe2 on bilayer graphene
Authors:
K. Sugawara,
T. Sato,
Y. Tanaka,
S. Souma,
T. Takahashi
Abstract:
We have fabricated a high-quality monolayer WSe2 film on bilayer graphene by epitaxial growth, and revealed the electronic states by spin- and angle-resolved photoemission spectroscopy. We observed a direct energy gap at the Brillounin-zone corner in contrast to the indirect nature of gap in bulk WSe2, which is attributed to the lack of interlayer interaction and the breaking of space-inversion sy…
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We have fabricated a high-quality monolayer WSe2 film on bilayer graphene by epitaxial growth, and revealed the electronic states by spin- and angle-resolved photoemission spectroscopy. We observed a direct energy gap at the Brillounin-zone corner in contrast to the indirect nature of gap in bulk WSe2, which is attributed to the lack of interlayer interaction and the breaking of space-inversion symmetry in monolayer film. A giant spin splitting of ~0.5 eV, which is the largest among known monolayer transition-metal dichalcogenides, is observed in the energy band around the zone corner. The present results suggest a high potential applicability of WSe2 to develop advanced devices based with the coupling of spin- and valley-degrees of freedom.
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Submitted 5 August, 2015;
originally announced August 2015.
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Synchrotron X-ray Diffraction Study of Structural Phase Transition in Ca10(Ir4As8)(Fe2-xIrxAs2)
Authors:
Naoyuki Katayama,
Kento Sugawara,
Yuki Sugiyama,
Takafumi Higuchi,
Kazutaka Kudo,
Daisuke Mitsuoka,
Takashi Mizokawa,
Minoru Nohara,
Hiroshi Sawa
Abstract:
We report a structural transition found in Ca10(Ir4As8)(Fe2-xIrxAs2)5, which exhibits superconductivity at 16 K. The c-axis parameter is doubled below a structural transition temperature of approximately 100 K, while the tetragonal symmetry with space group P4/n (No.85) is unchanged at all temperatures measured. Our synchrotron x-ray diffraction study clearly shows iridium ions at a non-coplanar p…
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We report a structural transition found in Ca10(Ir4As8)(Fe2-xIrxAs2)5, which exhibits superconductivity at 16 K. The c-axis parameter is doubled below a structural transition temperature of approximately 100 K, while the tetragonal symmetry with space group P4/n (No.85) is unchanged at all temperatures measured. Our synchrotron x-ray diffraction study clearly shows iridium ions at a non-coplanar position shift along the z-direction at the structural phase transition. We discuss that the iridium displacements affect superconductivity in Fe2As2 layers.
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Submitted 23 October, 2014;
originally announced October 2014.
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Iridium Orbital Crossover at the Structural Phase Transition in Ca10(Ir4As8)(Fe2-xIrxAs2)5
Authors:
Kento Sugawara,
Naoyuki Katayama,
Yuki Sugiyama,
Takafumi Higuchi,
Kazutaka Kudo,
Daisuke Mitsuoka,
Minoru Nohara,
Hiroshi Sawa
Abstract:
We report a structural transition found in Ca10(Ir4As8)(Fe2-xIrxAs2)5, which exhibits superconductivity at 16 K, with a layer of divalent iridium coordinated by arsenic in between Fe2As2 layers. The c-axis parameter is doubled below a structural transition temperature of approximately 100 K, while the tetragonal symmetry with space group P4/n (No.85) is unchanged at all temperatures measured. Our…
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We report a structural transition found in Ca10(Ir4As8)(Fe2-xIrxAs2)5, which exhibits superconductivity at 16 K, with a layer of divalent iridium coordinated by arsenic in between Fe2As2 layers. The c-axis parameter is doubled below a structural transition temperature of approximately 100 K, while the tetragonal symmetry with space group P4/n (No.85) is unchanged at all temperatures measured. Our synchrotron x-ray diffraction study clearly shows displacements along the z-direction occur in half of the iridium sites, resulting in a complex orbital ordering pattern. Combining our theoretical calculation of the 5d orbital energies with structural data, we propose the iridium orbital crossover transition between the dxy and dz2 orbitals.
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Submitted 17 February, 2014;
originally announced February 2014.
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Superconductivity in Ca1-xLaxFeAs2: A Novel 112-Type Iron Pnictide with Arsenic Zigzag Bonds
Authors:
Naoyuki Katayama,
Kazutaka Kudo,
Seiichiro Onari,
Tasuku Mizukami,
Kento Sugawara,
Yuki Sugiyama,
Yutaka Kitahama,
Keita Iba,
Kazunori Fujimura,
Naoki Nishimoto,
Minoru Nohara,
Hiroshi Sawa
Abstract:
We report superconductivity in the novel 112-type iron-based compound Ca1-xLaxFeAs2. Single-crystal X-ray diffraction analysis revealed that the compound crystallizes in a monoclinic structure (space group P21), in which Fe2As2 layers alternate with Ca2As2 spacer layers such that monovalent arsenic forms zigzag chains. Superconductivity with a transition temperature (Tc) of 34 K was observed for t…
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We report superconductivity in the novel 112-type iron-based compound Ca1-xLaxFeAs2. Single-crystal X-ray diffraction analysis revealed that the compound crystallizes in a monoclinic structure (space group P21), in which Fe2As2 layers alternate with Ca2As2 spacer layers such that monovalent arsenic forms zigzag chains. Superconductivity with a transition temperature (Tc) of 34 K was observed for the x = 0.1 sample, while the x = 0.21 sample exhibited trace superconductivity at 45 K. First-principles band calculations demonstrated the presence of almost cylindrical Fermi surfaces, favorable for the high Tc in La-doped CaFeAs2.
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Submitted 6 November, 2013;
originally announced November 2013.
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Superconductivity in Ca10(Ir4As8)(Fe2As2)5 with Square-Planar Coordination of Iridium
Authors:
Kazutaka Kudo,
Daisuke Mitsuoka,
Masaya Takasuga,
Yuki Sugiyama,
Kento Sugawara,
Naoyuki Katayama,
Hiroshi Sawa,
Hiroaki S. Kubo,
Kenta Takamori,
Masanori Ichioka,
Tatsuo Fujii,
Takashi Mizokawa,
Minoru Nohara
Abstract:
We report the unprecedented square-planar coordination of iridium in the iron iridium arsenide Ca10(Ir4As8)(Fe2As2)5. This material experiences superconductivity at 16 K. X-ray photoemission spectroscopy and first- principles band calculation suggest Ir(II) oxidation state, which yields electrically conductive Ir4As8 layers. Such metallic spacer layers are thought to enhance the interlayer couplin…
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We report the unprecedented square-planar coordination of iridium in the iron iridium arsenide Ca10(Ir4As8)(Fe2As2)5. This material experiences superconductivity at 16 K. X-ray photoemission spectroscopy and first- principles band calculation suggest Ir(II) oxidation state, which yields electrically conductive Ir4As8 layers. Such metallic spacer layers are thought to enhance the interlayer coupling of Fe2As2, in which superconductivity emerges, thus offering a way to control the superconducting transition temperature.
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Submitted 5 November, 2013;
originally announced November 2013.
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Direct Evidence for the Dirac-Cone Topological Surface States in Ternary Chalcogenide TlBiSe2
Authors:
Takafumi Sato,
Kouji Segawa,
Hua Guo,
Katsuaki Sugawara,
Seigo Souma,
Takashi Takahashi,
Yoichi Ando
Abstract:
We have performed high-resolution angle-resolved photoemission spectroscopy on TlBiSe2, which is a member of the ternary chalcogenides theoretically proposed as candidates for a new class of three-dimensional topological insulators. By measuring the energy band dispersions over the entire surface Brillouin zone, we found a direct evidence for a non-trivial surface metallic state showing a X-shaped…
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We have performed high-resolution angle-resolved photoemission spectroscopy on TlBiSe2, which is a member of the ternary chalcogenides theoretically proposed as candidates for a new class of three-dimensional topological insulators. By measuring the energy band dispersions over the entire surface Brillouin zone, we found a direct evidence for a non-trivial surface metallic state showing a X-shaped energy dispersion within the bulk band gap. The present result unambiguously establishes that TlBiSe2 is a strong topological insulator with a single Dirac cone at the Brillouin-zone center. The observed bulk band gap of 0.4 eV is the largest among known topological insulators, making TlBiSe2 the most promising material for studying room-temperature topological phenomena.
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Submitted 18 December, 2010; v1 submitted 12 June, 2010;
originally announced June 2010.
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Superconducting Gap and Pseudogap in Iron-Based Layered Superconductor La(O$_{1-x}$F$_x$)FeAs
Authors:
T. Sato,
S. Souma,
K. Nakayama,
K. Terashima,
K. Sugawara,
T. Takahashi,
Y. Kamihara,
M. Hirano,
H. Hosono
Abstract:
We report high-resolution photoemission spectroscopy of newly-discovered iron-based layered superconductor La(O$_{0.93}$F$_{0.07}$)FeAs (Tc = 24 K). We found that the superconducting gap shows a marked deviation from the isotropic s-wave symmetry. The estimated gap size at 5 K is 3.6 meV in the s- or axial p-wave case, while it is 4.1 meV in the polar p- or d-wave case. We also found a pseudogap…
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We report high-resolution photoemission spectroscopy of newly-discovered iron-based layered superconductor La(O$_{0.93}$F$_{0.07}$)FeAs (Tc = 24 K). We found that the superconducting gap shows a marked deviation from the isotropic s-wave symmetry. The estimated gap size at 5 K is 3.6 meV in the s- or axial p-wave case, while it is 4.1 meV in the polar p- or d-wave case. We also found a pseudogap of 15-20 meV above Tc, which is gradually filled-in with increasing temperature and closes at temperature far above Tc similarly to copper-oxide high-temperature superconductors.
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Submitted 19 May, 2008;
originally announced May 2008.
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Modelling of self-driven particles: foraging ants and pedestrians
Authors:
Katsuhiro Nishinari,
Ken Sugawara,
Toshiya Kazama,
Andreas Schadschneider,
Debashish Chowdhury
Abstract:
Models for the behavior of ants and pedestrians are studied in an unified way in this paper. Each ant follows pheromone put by preceding ants, hence creating a trail on the ground, while pedestrians also try to follow others in a crowd for efficient and safe walking. These following behaviors are incorporated in our stochastic models by using only local update rules for computational efficiency.…
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Models for the behavior of ants and pedestrians are studied in an unified way in this paper. Each ant follows pheromone put by preceding ants, hence creating a trail on the ground, while pedestrians also try to follow others in a crowd for efficient and safe walking. These following behaviors are incorporated in our stochastic models by using only local update rules for computational efficiency. It is demonstrated that the ant trail model shows an unusual non-monotonic dependence of the average speed of the ants on their density, which can be well analyzed by the zero-range process. We also show that this anomalous behavior is clearly observed in an experiment of multiple robots. Next, the relation between the ant trail model and the floor field model for studying evacuation dynamics of pedestrians is discussed. The latter is regarded as a two-dimensional generalization of the ant trail model, where the pheromone is replaced by footprints.
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Submitted 26 February, 2007;
originally announced February 2007.
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Fermi Surface and Anisotropic Spin-Orbit Coupling of Sb(111) studied by Angle-Resolved Photoemission Spectroscopy
Authors:
K. Sugawara,
T. Sato,
S. Souma,
T. Takahashi,
M. Arai,
T. Sasaki
Abstract:
High-resolution angle-resolved photoemission spectroscopy has been performed on Sb(111) to elucidate the origin of anomalous electronic properties in group-V semimetal surfaces. The surface was found to be metallic despite the semimetallic character of bulk. We clearly observed two surface-derived Fermi surfaces which are likely spin split, demonstrating that the spin-orbit interaction plays a d…
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High-resolution angle-resolved photoemission spectroscopy has been performed on Sb(111) to elucidate the origin of anomalous electronic properties in group-V semimetal surfaces. The surface was found to be metallic despite the semimetallic character of bulk. We clearly observed two surface-derived Fermi surfaces which are likely spin split, demonstrating that the spin-orbit interaction plays a dominant role in characterising the surface electronic states of group-V semimetals. Universality/disimilarity of the electronic structure in Bi and Sb is discussed in relation to the granular superconductivity, electron-phonon coupling, and surface charge/spin density wave.
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Submitted 7 January, 2006;
originally announced January 2006.
